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JPS5599726A - Method and device for plasma treatment - Google Patents

Method and device for plasma treatment

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Publication number
JPS5599726A
JPS5599726AJP708879AJP708879AJPS5599726AJP S5599726 AJPS5599726 AJP S5599726AJP 708879 AJP708879 AJP 708879AJP 708879 AJP708879 AJP 708879AJP S5599726 AJPS5599726 AJP S5599726A
Authority
JP
Japan
Prior art keywords
treated object
plasma
treated
plasma treatment
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP708879A
Other languages
Japanese (ja)
Inventor
Hirobumi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP708879ApriorityCriticalpatent/JPS5599726A/en
Publication of JPS5599726ApublicationCriticalpatent/JPS5599726A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: To etch uniformly in a plasma treatment device by heating a treated object to cause a temperature gradient in the treated object.
CONSTITUTION: A silicon wafer 3 which is a treated object is set on a stage 4. Plasma is introduced to a bell jar 1 through a suction valve 9. Among the heaters 6, 7 and 8 in the stage 4, the central heater 6 is heated most. The higher the temperature of a treated object is, the faster the speed of plasma etching becomes, therefore, the treated object can be plasma-treated uniformly by heating the treated object so that a temperature gradient may be caused in the treated object.
COPYRIGHT: (C)1980,JPO&Japio
JP708879A1979-01-261979-01-26Method and device for plasma treatmentPendingJPS5599726A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP708879AJPS5599726A (en)1979-01-261979-01-26Method and device for plasma treatment

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP708879AJPS5599726A (en)1979-01-261979-01-26Method and device for plasma treatment

Related Child Applications (1)

Application NumberTitlePriority DateFiling Date
JP9956785ADivisionJPS6110238A (en)1985-05-131985-05-13Method of plasma treatment

Publications (1)

Publication NumberPublication Date
JPS5599726Atrue JPS5599726A (en)1980-07-30

Family

ID=11656321

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP708879APendingJPS5599726A (en)1979-01-261979-01-26Method and device for plasma treatment

Country Status (1)

CountryLink
JP (1)JPS5599726A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5961035A (en)*1982-09-301984-04-07Fujitsu LtdManufacture of semiconductor device
JPS6316624A (en)*1986-07-091988-01-23Hitachi LtdPlasma treatment system
JPS63271935A (en)*1987-04-281988-11-09Matsushita Electric Ind Co Ltd plasma processing equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS51112445A (en)*1975-03-281976-10-04Tokyo Shibaura Electric CoGas etching means

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS51112445A (en)*1975-03-281976-10-04Tokyo Shibaura Electric CoGas etching means

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5961035A (en)*1982-09-301984-04-07Fujitsu LtdManufacture of semiconductor device
JPS6316624A (en)*1986-07-091988-01-23Hitachi LtdPlasma treatment system
JPS63271935A (en)*1987-04-281988-11-09Matsushita Electric Ind Co Ltd plasma processing equipment

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