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JPS5575348U - - Google Patents

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Publication number
JPS5575348U
JPS5575348UJP16031678UJP16031678UJPS5575348UJP S5575348 UJPS5575348 UJP S5575348UJP 16031678 UJP16031678 UJP 16031678UJP 16031678 UJP16031678 UJP 16031678UJP S5575348 UJPS5575348 UJP S5575348U
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16031678U
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Japanese (ja)
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Publication date
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Priority to JP16031678UpriorityCriticalpatent/JPS5575348U/ja
Publication of JPS5575348UpublicationCriticalpatent/JPS5575348U/ja
Pendinglegal-statusCriticalCurrent

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JP16031678U1978-11-201978-11-20PendingJPS5575348U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP16031678UJPS5575348U (en)1978-11-201978-11-20

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP16031678UJPS5575348U (en)1978-11-201978-11-20

Publications (1)

Publication NumberPublication Date
JPS5575348Utrue JPS5575348U (en)1980-05-24

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ID=29153955

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP16031678UPendingJPS5575348U (en)1978-11-201978-11-20

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JP (1)JPS5575348U (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US8954902B2 (en)2005-07-112015-02-10Peregrine Semiconductor CorporationMethod and apparatus improving gate oxide reliability by controlling accumulated charge
US8994452B2 (en)2008-07-182015-03-31Peregrine Semiconductor CorporationLow-noise high efficiency bias generation circuits and method
US9024700B2 (en)2008-02-282015-05-05Peregrine Semiconductor CorporationMethod and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9030248B2 (en)2008-07-182015-05-12Peregrine Semiconductor CorporationLevel shifter with output spike reduction
US9087899B2 (en)2005-07-112015-07-21Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9130564B2 (en)2005-07-112015-09-08Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US9177737B2 (en)2007-04-262015-11-03Peregrine Semiconductor CorporationTuning capacitance to enhance FET stack voltage withstand
US9190902B2 (en)2003-09-082015-11-17Peregrine Semiconductor CorporationLow noise charge pump method and apparatus
US9264053B2 (en)2011-01-182016-02-16Peregrine Semiconductor CorporationVariable frequency charge pump
US9369087B2 (en)2004-06-232016-06-14Peregrine Semiconductor CorporationIntegrated RF front end with stacked transistor switch
US9406695B2 (en)2013-11-202016-08-02Peregrine Semiconductor CorporationCircuit and method for improving ESD tolerance and switching speed
US9590674B2 (en)2012-12-142017-03-07Peregrine Semiconductor CorporationSemiconductor devices with switchable ground-body connection
US12074217B2 (en)2005-07-112024-08-27Psemi CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction

Cited By (17)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US9190902B2 (en)2003-09-082015-11-17Peregrine Semiconductor CorporationLow noise charge pump method and apparatus
US9369087B2 (en)2004-06-232016-06-14Peregrine Semiconductor CorporationIntegrated RF front end with stacked transistor switch
US12074217B2 (en)2005-07-112024-08-27Psemi CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US9087899B2 (en)2005-07-112015-07-21Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction
US8954902B2 (en)2005-07-112015-02-10Peregrine Semiconductor CorporationMethod and apparatus improving gate oxide reliability by controlling accumulated charge
US9130564B2 (en)2005-07-112015-09-08Peregrine Semiconductor CorporationMethod and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
US9177737B2 (en)2007-04-262015-11-03Peregrine Semiconductor CorporationTuning capacitance to enhance FET stack voltage withstand
US9293262B2 (en)2008-02-282016-03-22Peregrine Semiconductor CorporationDigitally tuned capacitors with tapered and reconfigurable quality factors
US9197194B2 (en)2008-02-282015-11-24Peregrine Semiconductor CorporationMethods and apparatuses for use in tuning reactance in a circuit device
US9024700B2 (en)2008-02-282015-05-05Peregrine Semiconductor CorporationMethod and apparatus for use in digitally tuning a capacitor in an integrated circuit device
US9106227B2 (en)2008-02-282015-08-11Peregrine Semiconductor CorporationDevices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
US8994452B2 (en)2008-07-182015-03-31Peregrine Semiconductor CorporationLow-noise high efficiency bias generation circuits and method
US9030248B2 (en)2008-07-182015-05-12Peregrine Semiconductor CorporationLevel shifter with output spike reduction
US9264053B2 (en)2011-01-182016-02-16Peregrine Semiconductor CorporationVariable frequency charge pump
US9413362B2 (en)2011-01-182016-08-09Peregrine Semiconductor CorporationDifferential charge pump
US9590674B2 (en)2012-12-142017-03-07Peregrine Semiconductor CorporationSemiconductor devices with switchable ground-body connection
US9406695B2 (en)2013-11-202016-08-02Peregrine Semiconductor CorporationCircuit and method for improving ESD tolerance and switching speed

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