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JPS5575238A - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
JPS5575238A
JPS5575238AJP15032478AJP15032478AJPS5575238AJP S5575238 AJPS5575238 AJP S5575238AJP 15032478 AJP15032478 AJP 15032478AJP 15032478 AJP15032478 AJP 15032478AJP S5575238 AJPS5575238 AJP S5575238A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
layer
sio
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15032478A
Other languages
Japanese (ja)
Inventor
Takashi Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP15032478ApriorityCriticalpatent/JPS5575238A/en
Publication of JPS5575238ApublicationCriticalpatent/JPS5575238A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: To improve the withstand voltage of a semiconductor device by implanting O2 ion to the vicinity of an insulating film in a semiconductor layer formed on an insulating substrate to thereby convert the portion into an oxide layer.
CONSTITUTION: An eptitaxial silicon film 22 is formed on a sapphire substrate 21, O2 ion is then implanted thereon in high density, and the film 22 is converted into an SiO2 layer 23 in high temperature N2. The film 22 is then etched with an Si3N4 film 24 as a mask. The mask is then removed, the film 22 is wet oxidized to thereby form a gate oxide film 25 thereon, and a polysilicon gate electrode 26, a source 27, a drain 28 and a wire 29 are sequentially formed thereon by means of a self aligning process. According to this method, with the SiO2 film 23 interposed the gate withstand voltage of the semiconductor device can be remarkably improved, and the element regions and the peripheral regions are smoothly connected to thereby prevent disconnection of the wiring layer thereon.
COPYRIGHT: (C)1980,JPO&Japio
JP15032478A1978-12-041978-12-04Method of fabricating semiconductor devicePendingJPS5575238A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP15032478AJPS5575238A (en)1978-12-041978-12-04Method of fabricating semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP15032478AJPS5575238A (en)1978-12-041978-12-04Method of fabricating semiconductor device

Publications (1)

Publication NumberPublication Date
JPS5575238Atrue JPS5575238A (en)1980-06-06

Family

ID=15494522

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP15032478APendingJPS5575238A (en)1978-12-041978-12-04Method of fabricating semiconductor device

Country Status (1)

CountryLink
JP (1)JPS5575238A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4950618A (en)*1989-04-141990-08-21Texas Instruments, IncorporatedMasking scheme for silicon dioxide mesa formation
US5024965A (en)*1990-02-161991-06-18Chang Chen Chi PManufacturing high speed low leakage radiation hardened CMOS/SOI devices
US5372952A (en)*1992-04-031994-12-13National Semiconductor CorporationMethod for forming isolated semiconductor structures
US5470762A (en)*1991-11-291995-11-28Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a thin film transistor
US7692223B2 (en)2006-04-282010-04-06Semiconductor Energy Laboratory Co., LtdSemiconductor device and method for manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4950618A (en)*1989-04-141990-08-21Texas Instruments, IncorporatedMasking scheme for silicon dioxide mesa formation
US5024965A (en)*1990-02-161991-06-18Chang Chen Chi PManufacturing high speed low leakage radiation hardened CMOS/SOI devices
US5470762A (en)*1991-11-291995-11-28Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a thin film transistor
US5757030A (en)*1991-11-291998-05-26Semiconductor Energy Laboratory Co., Ltd.Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island
US5372952A (en)*1992-04-031994-12-13National Semiconductor CorporationMethod for forming isolated semiconductor structures
US5376560A (en)*1992-04-031994-12-27National Semiconductor CorporationMethod for forming isolated semiconductor structures
US7692223B2 (en)2006-04-282010-04-06Semiconductor Energy Laboratory Co., LtdSemiconductor device and method for manufacturing the same
US8896049B2 (en)2006-04-282014-11-25Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same

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