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JPS5558552A - Metal wiring - Google Patents

Metal wiring

Info

Publication number
JPS5558552A
JPS5558552AJP13202778AJP13202778AJPS5558552AJP S5558552 AJPS5558552 AJP S5558552AJP 13202778 AJP13202778 AJP 13202778AJP 13202778 AJP13202778 AJP 13202778AJP S5558552 AJPS5558552 AJP S5558552A
Authority
JP
Japan
Prior art keywords
film
base plate
current
metal
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13202778A
Other languages
Japanese (ja)
Inventor
Shinichi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAIfiledCriticalCHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP13202778ApriorityCriticalpatent/JPS5558552A/en
Publication of JPS5558552ApublicationCriticalpatent/JPS5558552A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: To obtain a wiring pattern accurately and easily, by providing a foundation metal layer for flowing current uniformly when metal wiring, which is connected to a base plate via an insulating film having an opening, is formed on a semiconductor base plate by means of electrolytic etching.
CONSTITUTION: SiO2 film 2 having contact hole 5 in a specified region is formed on Si base plate 1. On top of this is fitted No.1 metal film 11 for supplying current to various wirings of Ti or W in contact with base plate 1. Next, the entire surface is fitted with Al No.2 metal film 3. Then, by using mask 4, made of photoresist film, electrolytic etching is operated. Current is supplied from the anode side to film 3 via base plate 1, hole 5 and film 11. By this, even if film 11 is exposed as etching progresses, current flows through this, and film 3 is separated from wirings a, b, c clearly. Subsequently, mask 4 is removed, and film 11, which has become unneeded, is removed by using CF4 gas plasma.
COPYRIGHT: (C)1980,JPO&Japio
JP13202778A1978-10-251978-10-25Metal wiringPendingJPS5558552A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP13202778AJPS5558552A (en)1978-10-251978-10-25Metal wiring

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP13202778AJPS5558552A (en)1978-10-251978-10-25Metal wiring

Publications (1)

Publication NumberPublication Date
JPS5558552Atrue JPS5558552A (en)1980-05-01

Family

ID=15071781

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP13202778APendingJPS5558552A (en)1978-10-251978-10-25Metal wiring

Country Status (1)

CountryLink
JP (1)JPS5558552A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS62154628A (en)*1985-12-261987-07-09Matsushita Electric Ind Co Ltd Dry etching method
WO2002022916A1 (en)*2000-09-182002-03-21Obducat AktiebolagMethod of etching, as well as frame element, mask and prefabricated substrate element for use in such etching
US6656341B2 (en)2000-09-182003-12-02Obducat AktiebolagMethod of etching, as well as frame element, mask and prefabricated substrate element for use in such etching

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS62154628A (en)*1985-12-261987-07-09Matsushita Electric Ind Co Ltd Dry etching method
WO2002022916A1 (en)*2000-09-182002-03-21Obducat AktiebolagMethod of etching, as well as frame element, mask and prefabricated substrate element for use in such etching
US6656341B2 (en)2000-09-182003-12-02Obducat AktiebolagMethod of etching, as well as frame element, mask and prefabricated substrate element for use in such etching

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