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JPS5532026A - Liquid crystal display panel - Google Patents

Liquid crystal display panel

Info

Publication number
JPS5532026A
JPS5532026AJP10421078AJP10421078AJPS5532026AJP S5532026 AJPS5532026 AJP S5532026AJP 10421078 AJP10421078 AJP 10421078AJP 10421078 AJP10421078 AJP 10421078AJP S5532026 AJPS5532026 AJP S5532026A
Authority
JP
Japan
Prior art keywords
film
films
vapor deposition
sio
liquid crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10421078A
Other languages
Japanese (ja)
Other versions
JPS5842448B2 (en
Inventor
Koichi Oguchi
Minoru Hosokawa
Satoru Yazawa
Mitsuo Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KKfiledCriticalSeiko Epson Corp
Priority to JP53104210ApriorityCriticalpatent/JPS5842448B2/en
Publication of JPS5532026ApublicationCriticalpatent/JPS5532026A/en
Publication of JPS5842448B2publicationCriticalpatent/JPS5842448B2/en
Expiredlegal-statusCriticalCurrent

Links

Landscapes

Abstract

PURPOSE: To increase contrast and make viewing easier by reducing the ratios occupied by the regions where diagonal vapor deposition films do not deposit owing to serrations at the time of flattening the surface of the regions where semiconductor substrate surfaces contribute to displaying and performing diagonal vapor deposition.
CONSTITUTION: An n type Si substrate 7 wherein the region encircled by alternate two long and short dashes line corresponds to one picture element is provided with p type diffused layers 8, n+ type diffused layers 9, field oxide film 10, SiO2 film 11, doped poly-Si film 12, CVD method SiO2 film 13, and Al films 14 for electrodes and wirings. Varnish form insulation layer of 1W5μ thick is coated and formed on the highly undulated surface of this semiconductor substrate, whereby a layer 21 for flattening the surface is formed. Next, through holes are provided and transparent conductive film layers 22 for liquid crystal driving are provided in connection with the films 14. Thereafter, an orientation film 20 is formed by diagonal vapor deposition of SiO.
COPYRIGHT: (C)1980,JPO&Japio
JP53104210A1978-08-251978-08-25 lcd display panelExpiredJPS5842448B2 (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP53104210AJPS5842448B2 (en)1978-08-251978-08-25 lcd display panel

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP53104210AJPS5842448B2 (en)1978-08-251978-08-25 lcd display panel

Publications (2)

Publication NumberPublication Date
JPS5532026Atrue JPS5532026A (en)1980-03-06
JPS5842448B2 JPS5842448B2 (en)1983-09-20

Family

ID=14374593

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP53104210AExpiredJPS5842448B2 (en)1978-08-251978-08-25 lcd display panel

Country Status (1)

CountryLink
JP (1)JPS5842448B2 (en)

Cited By (33)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5667884A (en)*1979-11-091981-06-08Tokyo Shibaura Electric CoLiquid crystal display element
JPS5781238A (en)*1980-11-101982-05-21Seiko Epson CorpLiquid crystal display device
JPS57104547U (en)*1980-12-191982-06-28
WO1986000424A1 (en)*1984-06-181986-01-16Nissha Printing Co., Ltd.Liquid-crystal multi-color display device
JPS6468726A (en)*1987-09-091989-03-14Casio Computer Co LtdThin film transistor and its manufacture
US5003356A (en)*1987-09-091991-03-26Casio Computer Co., Ltd.Thin film transistor array
US5166085A (en)*1987-09-091992-11-24Casio Computer Co., Ltd.Method of manufacturing a thin film transistor
US5229644A (en)*1987-09-091993-07-20Casio Computer Co., Ltd.Thin film transistor having a transparent electrode and substrate
US5899547A (en)*1990-11-261999-05-04Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US5933205A (en)*1991-03-261999-08-03Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the same
US5956105A (en)*1991-06-141999-09-21Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US5968383A (en)*1992-06-261999-10-19Semiconductor Energy Laboratory Co., Ltd.Laser processing apparatus having beam expander
US5990491A (en)*1994-04-291999-11-23Semiconductor Energy Laboratory Co., Ltd.Active matrix device utilizing light shielding means for thin film transistors
US5990542A (en)*1995-12-141999-11-23Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US6013928A (en)*1991-08-232000-01-11Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having interlayer insulating film and method for forming the same
US6023075A (en)*1990-12-252000-02-08Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for manufacturing the same
US6149988A (en)*1986-09-262000-11-21Semiconductor Energy Laboratory Co., Ltd.Method and system of laser processing
US6159777A (en)*1993-02-042000-12-12Semiconductor Energy Laboratory Co., Ltd.Method of forming a TFT semiconductor device
US6169293B1 (en)1995-11-172001-01-02Semiconductor Energy LabsDisplay device
US6195139B1 (en)1992-03-042001-02-27Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US6225218B1 (en)1995-12-202001-05-01Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and its manufacturing method
US6242758B1 (en)1994-12-272001-06-05Semiconductor Energy Laboratory Co., Ltd.Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6261856B1 (en)1987-09-162001-07-17Semiconductor Energy Laboratory Co., Ltd.Method and system of laser processing
US6337731B1 (en)1992-04-282002-01-08Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6693681B1 (en)1992-04-282004-02-17Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6778231B1 (en)1991-06-142004-08-17Semiconductor Energy Laboratory Co., Ltd.Electro-optical display device
US6800875B1 (en)1995-11-172004-10-05Semiconductor Energy Laboratory Co., Ltd.Active matrix electro-luminescent display device with an organic leveling layer
JP2004310123A (en)*2004-05-202004-11-04Semiconductor Energy Lab Co LtdActive type display unit, and television, camera and computer using same
US6963382B1 (en)1995-11-172005-11-08Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display and method of driving same
US6975296B1 (en)1991-06-142005-12-13Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US7154147B1 (en)1990-11-262006-12-26Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US7163854B2 (en)1996-11-072007-01-16Semiconductor Energy Laboratory Co., Ltd.Fabrication method of a semiconductor device
US8106867B2 (en)1990-11-262012-01-31Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JP3210307B2 (en)*1990-12-292001-09-17株式会社半導体エネルギー研究所 TV receiver

Cited By (62)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5667884A (en)*1979-11-091981-06-08Tokyo Shibaura Electric CoLiquid crystal display element
JPS5781238A (en)*1980-11-101982-05-21Seiko Epson CorpLiquid crystal display device
JPS57104547U (en)*1980-12-191982-06-28
WO1986000424A1 (en)*1984-06-181986-01-16Nissha Printing Co., Ltd.Liquid-crystal multi-color display device
US6149988A (en)*1986-09-262000-11-21Semiconductor Energy Laboratory Co., Ltd.Method and system of laser processing
JPS6468726A (en)*1987-09-091989-03-14Casio Computer Co LtdThin film transistor and its manufacture
US5003356A (en)*1987-09-091991-03-26Casio Computer Co., Ltd.Thin film transistor array
US5055899A (en)*1987-09-091991-10-08Casio Computer Co., Ltd.Thin film transistor
US5166085A (en)*1987-09-091992-11-24Casio Computer Co., Ltd.Method of manufacturing a thin film transistor
US5229644A (en)*1987-09-091993-07-20Casio Computer Co., Ltd.Thin film transistor having a transparent electrode and substrate
US6261856B1 (en)1987-09-162001-07-17Semiconductor Energy Laboratory Co., Ltd.Method and system of laser processing
US5946059A (en)*1990-11-261999-08-31Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US5905555A (en)*1990-11-261999-05-18Semiconductor Energy Laboratory Co., Ltd.Active matrix type electro-optical device having leveling film
US7154147B1 (en)1990-11-262006-12-26Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US5899547A (en)*1990-11-261999-05-04Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US8106867B2 (en)1990-11-262012-01-31Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US7423290B2 (en)1990-11-262008-09-09Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US8026886B2 (en)1990-11-262011-09-27Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and driving method for the same
US6023075A (en)*1990-12-252000-02-08Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for manufacturing the same
US5933205A (en)*1991-03-261999-08-03Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the same
US5963278A (en)*1991-03-261999-10-05Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the same
US7928946B2 (en)1991-06-142011-04-19Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6975296B1 (en)1991-06-142005-12-13Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6778231B1 (en)1991-06-142004-08-17Semiconductor Energy Laboratory Co., Ltd.Electro-optical display device
US5956105A (en)*1991-06-141999-09-21Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6013928A (en)*1991-08-232000-01-11Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having interlayer insulating film and method for forming the same
US8035773B2 (en)1992-03-042011-10-11Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US7123320B2 (en)1992-03-042006-10-17Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US6195139B1 (en)1992-03-042001-02-27Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US6618105B2 (en)1992-03-042003-09-09Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US6337731B1 (en)1992-04-282002-01-08Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US7554616B1 (en)1992-04-282009-06-30Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6693681B1 (en)1992-04-282004-02-17Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US6440785B1 (en)1992-06-262002-08-27Semiconductor Energy Laboratory Co., LtdMethod of manufacturing a semiconductor device utilizing a laser annealing process
US7985635B2 (en)1992-06-262011-07-26Semiconductor Energy Laboratory Co., Ltd.Laser process
US6002101A (en)*1992-06-261999-12-14Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a semiconductor device by using a homogenized rectangular laser beam
US6991975B1 (en)1992-06-262006-01-31Semiconductor Energy Laboratory Co., Ltd.Laser process
US5968383A (en)*1992-06-261999-10-19Semiconductor Energy Laboratory Co., Ltd.Laser processing apparatus having beam expander
US6159777A (en)*1993-02-042000-12-12Semiconductor Energy Laboratory Co., Ltd.Method of forming a TFT semiconductor device
US6800873B2 (en)1994-04-292004-10-05Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic device
US5990491A (en)*1994-04-291999-11-23Semiconductor Energy Laboratory Co., Ltd.Active matrix device utilizing light shielding means for thin film transistors
US7423291B2 (en)1994-04-292008-09-09Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic device
US6501097B1 (en)1994-04-292002-12-31Semiconductor Energy Laboratory Co., Ltd.Electro-optical device
US8319715B2 (en)1994-04-292012-11-27Semiconductor Energy Laboratory Co., Ltd.Active matrix type liquid crystal display device
US7102164B2 (en)1994-04-292006-09-05Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a conductive layer with a light shielding part
US6242758B1 (en)1994-12-272001-06-05Semiconductor Energy Laboratory Co., Ltd.Semiconductor device employing resinous material, method of fabricating the same and electrooptical device
US6429053B1 (en)1994-12-272002-08-06Semiconductor Energy Laboratory Co., Ltd.Semiconductor device method of fabricating same, and, electrooptical device
US6963382B1 (en)1995-11-172005-11-08Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display and method of driving same
US6239470B1 (en)1995-11-172001-05-29Semiconductor Energy Laboratory Co., Ltd.Active matrix electro-luminescent display thin film transistor
US9213193B2 (en)1995-11-172015-12-15Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display and method of driving
US6800875B1 (en)1995-11-172004-10-05Semiconductor Energy Laboratory Co., Ltd.Active matrix electro-luminescent display device with an organic leveling layer
US6169293B1 (en)1995-11-172001-01-02Semiconductor Energy LabsDisplay device
US6867434B2 (en)1995-11-172005-03-15Semiconductor Energy Laboratory Co., Ltd.Active matrix electro-luminescent display with an organic leveling layer
US5990542A (en)*1995-12-141999-11-23Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US7034381B2 (en)1995-12-142006-04-25Semiconductor Energey Laboratory Co., Ltd.Semiconductor device
US6787887B2 (en)1995-12-142004-09-07Semiconductor Energy Laboratory Co., Ltd.Semiconductor device
US7202551B2 (en)1995-12-142007-04-10Semiconductor Energy Laboratory Co., Ltd.Display device having underlying insulating film and insulating films
US7750476B2 (en)1995-12-202010-07-06Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a reliable contact
US6225218B1 (en)1995-12-202001-05-01Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and its manufacturing method
US7470580B2 (en)1996-11-072008-12-30Semiconductor Energy Laboratory Co., Ltd.Fabrication method of a semiconductor device
US7163854B2 (en)1996-11-072007-01-16Semiconductor Energy Laboratory Co., Ltd.Fabrication method of a semiconductor device
JP2004310123A (en)*2004-05-202004-11-04Semiconductor Energy Lab Co LtdActive type display unit, and television, camera and computer using same

Also Published As

Publication numberPublication date
JPS5842448B2 (en)1983-09-20

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