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JPS5515263A - Mos type semiconductor device - Google Patents

Mos type semiconductor device

Info

Publication number
JPS5515263A
JPS5515263AJP8876678AJP8876678AJPS5515263AJP S5515263 AJPS5515263 AJP S5515263AJP 8876678 AJP8876678 AJP 8876678AJP 8876678 AJP8876678 AJP 8876678AJP S5515263 AJPS5515263 AJP S5515263A
Authority
JP
Japan
Prior art keywords
film
stepped portion
etched
thin
schottky junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8876678A
Other languages
Japanese (ja)
Inventor
Yoshio Miura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAIfiledCriticalCHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP8876678ApriorityCriticalpatent/JPS5515263A/en
Publication of JPS5515263ApublicationCriticalpatent/JPS5515263A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: To stabilize a schottky junction with a wiring pattern having a high density by controlling the exposure amount to a photo resist film provided on the stepped portion mounted on a semiconductor substrate.
CONSTITUTION: An insulation film 9 and 9' are mounted on a semiconductor substrate 8 and the film 9' is etched off to be changed into a thin gate insulation film 10 and 10'. Successively the film 10' on a source, drain region forming therein the substrate 8 and schottky junction is etched off to mount thereon a metallic film 11 of Al and others. Thereafter, the full surface is covered with a photoresist film 12, in this case a film 14 to 14' on a stepped portion 13 to 13' is made thin than that a film 16 on a planer portion 15. Successively, when the resist film 12 is exposured, the thin film 11 is caused to associate with the stepped portion 13 to be separated the exposure amount is given changeably to the remaining stepped portion 13' and 13" and the planer portion 15 to make the film a pattern configuration 17. Thereafter, the film is etched as used for a mask, a thin film 14 is made a deter mined wiring pattern 18 to generate a schottky junction 19.
COPYRIGHT: (C)1980,JPO&Japio
JP8876678A1978-07-191978-07-19Mos type semiconductor devicePendingJPS5515263A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8876678AJPS5515263A (en)1978-07-191978-07-19Mos type semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8876678AJPS5515263A (en)1978-07-191978-07-19Mos type semiconductor device

Publications (1)

Publication NumberPublication Date
JPS5515263Atrue JPS5515263A (en)1980-02-02

Family

ID=13951976

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8876678APendingJPS5515263A (en)1978-07-191978-07-19Mos type semiconductor device

Country Status (1)

CountryLink
JP (1)JPS5515263A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5932172A (en)*1982-07-231984-02-21ウェスターン　エレクトリック　カムパニー，インコーポレーテッドIntegrated circuit made of schottky barrier mos device and method of producing same
JPS6034066A (en)*1983-08-061985-02-21Fujitsu LtdSemiconductor device and manufacture thereof
JPS60103671A (en)*1983-11-111985-06-07Toshiba CorpSemiconductor device
US7564061B2 (en)2004-09-282009-07-21Fujitsu LimitedField effect transistor and production method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5932172A (en)*1982-07-231984-02-21ウェスターン　エレクトリック　カムパニー，インコーポレーテッドIntegrated circuit made of schottky barrier mos device and method of producing same
JPS6034066A (en)*1983-08-061985-02-21Fujitsu LtdSemiconductor device and manufacture thereof
JPS60103671A (en)*1983-11-111985-06-07Toshiba CorpSemiconductor device
US7564061B2 (en)2004-09-282009-07-21Fujitsu LimitedField effect transistor and production method thereof

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