Movatterモバイル変換

[0]ホーム
URL:

JPS5513904A - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method

Info

Publication number
JPS5513904A
JPS5513904AJP8609578AJP8609578AJPS5513904AJP S5513904 AJPS5513904 AJP S5513904AJP 8609578 AJP8609578 AJP 8609578AJP 8609578 AJP8609578 AJP 8609578AJP S5513904 AJPS5513904 AJP S5513904A
Authority
JP
Japan
Prior art keywords
insulator
substrate
concave portion
sio
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8609578A
Other languages
Japanese (ja)
Other versions
JPS6255700B2 (en
Inventor
Sukeyoshi Tsunekawa
Yukiyoshi Harada
Yoshio Honma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP8609578ApriorityCriticalpatent/JPS5513904A/en
Publication of JPS5513904ApublicationCriticalpatent/JPS5513904A/en
Publication of JPS6255700B2publicationCriticalpatent/JPS6255700B2/ja
Grantedlegal-statusCriticalCurrent

Links

Landscapes

Abstract

PURPOSE: To improve an integrating rate and a reliability of the wiring by forming flat the separated insulation layer interposed between the elements by a bias spattering method.
CONSTITUTION: A concave portion 3 with a steep side face is slectively formed on a substrate 1 by an ion milling method and others and is covered with thin SiO2 film 4 to bury an insulator into the concave portion 3 by a bias spattering method. The element is formed in a region 6 by utilizing an appropriate mask. In this case, SiO2, Si3N4, alumina and others are used for the insulator. According to such a method, the surface of the substrate can be formed flat, the fine working to the element be easily established and further the disconnection of the wires by prevented.
COPYRIGHT: (C)1980,JPO&Japio
JP8609578A1978-07-171978-07-17Semiconductor device and its manufacturing methodGrantedJPS5513904A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8609578AJPS5513904A (en)1978-07-171978-07-17Semiconductor device and its manufacturing method

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8609578AJPS5513904A (en)1978-07-171978-07-17Semiconductor device and its manufacturing method

Publications (2)

Publication NumberPublication Date
JPS5513904Atrue JPS5513904A (en)1980-01-31
JPS6255700B2 JPS6255700B2 (en)1987-11-20

Family

ID=13877141

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8609578AGrantedJPS5513904A (en)1978-07-171978-07-17Semiconductor device and its manufacturing method

Country Status (1)

CountryLink
JP (1)JPS5513904A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS57193044A (en)*1981-05-081982-11-27Fairchild Camera Instr CoMethod of producing non-invasion type planar insulating region in integrated circuit structure
JPS583248A (en)*1981-06-301983-01-10Toshiba Corp Method for manufacturing bipolar semiconductor device
JPS6070741A (en)*1983-09-261985-04-22Mitsubishi Electric CorpInterelement isolation
JPS6294955A (en)*1985-10-211987-05-01Nec CorpElement isolation
JPWO2007000808A1 (en)*2005-06-282009-01-22スパンション エルエルシー Semiconductor device and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS57193044A (en)*1981-05-081982-11-27Fairchild Camera Instr CoMethod of producing non-invasion type planar insulating region in integrated circuit structure
JPS583248A (en)*1981-06-301983-01-10Toshiba Corp Method for manufacturing bipolar semiconductor device
JPS6070741A (en)*1983-09-261985-04-22Mitsubishi Electric CorpInterelement isolation
JPS6294955A (en)*1985-10-211987-05-01Nec CorpElement isolation
JPWO2007000808A1 (en)*2005-06-282009-01-22スパンション エルエルシー Semiconductor device and manufacturing method thereof

Also Published As

Publication numberPublication date
JPS6255700B2 (en)1987-11-20

Similar Documents

PublicationPublication DateTitle
EP0288052A3 (en)Semiconductor device comprising a substrate, and production method thereof
JPS55163860A (en)Manufacture of semiconductor device
EP0177105A3 (en)Method for providing a semiconductor device with planarized contacts
JPS54589A (en)Burying method of insulator
JPS6423557A (en)Connection between two conductor layers or semiconductor layers built up on substrate
JPS5513904A (en)Semiconductor device and its manufacturing method
JPS54154272A (en)Contact forming method for semiconductor device
JPS5331964A (en)Production of semiconductor substrates
JPS57106056A (en)Electrode structural body of semiconductor device
JPS5513905A (en)Manufacturing method of minute multi-layer wiring
JPS56129337A (en)Insulative separation structure for semiconductor monolithic integrated circuit
JPS56165339A (en)Semiconductor device
EP0067738A3 (en)Method of reducing encroachment in a semiconductor device
JPS57160156A (en)Semiconductor device
JPS5376A (en)Manufacture of semiconductor device
JPS5227362A (en)Formation method of passivation film
JPS57202756A (en)Manufacture of semiconductor device
JPS5585036A (en)Bonding method
JPS5527644A (en)Multi-layer wiring type semiconductor device
JPS57184232A (en)Manufacture of semiconductor device
JPS5555546A (en)Method of wiring semiconductor device
JPS54105982A (en)Mis-type semiconductor device and its manufacture
JPS5365676A (en)Manufacture of integrated semiconductor device
JPS53119669A (en)Production of semiconductor device
JPS57169258A (en)Manufacture of semiconductor device
[8]ページ先頭
©2009-2025 Movatter.jp