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JPS5511365A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5511365A
JPS5511365AJP8435478AJP8435478AJPS5511365AJP S5511365 AJPS5511365 AJP S5511365AJP 8435478 AJP8435478 AJP 8435478AJP 8435478 AJP8435478 AJP 8435478AJP S5511365 AJPS5511365 AJP S5511365A
Authority
JP
Japan
Prior art keywords
film
range
recess
substrate
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8435478A
Other languages
Japanese (ja)
Inventor
Kunihiko Hirashima
Susumu Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic CorpfiledCriticalPioneer Electronic Corp
Priority to JP8435478ApriorityCriticalpatent/JPS5511365A/en
Publication of JPS5511365ApublicationCriticalpatent/JPS5511365A/en
Pendinglegal-statusCriticalCurrent

Links

Classifications

Landscapes

Abstract

PURPOSE:For increasing a capacity section in capacitance without increasing the size of cell surface, to provide in a semiconductor substrate a recess contacting with a source and drain range and a source range through the medium of insulating film. CONSTITUTION:An N-type source range 3 and a drain range 4 are diffusedly formed on an P-type Si substrate 1, and SiO2 film 10 is formed on the whole surface of said substrate 1. Next, plasma etching is made by using the mask of photo resist film 11 to form a deep recess 12 in said substrate 1 with the side faces of said range 3 exposed. Thereafter, said film 11 is removed. SiO2 film 2 is deposited on the exposed surface of said recess 12 and combined with said film 10, said film 10 located between said ranges 3 and 4 is decreased in thickness into a thin film 5, and a gate electrode 6 is fitted on said film 5. Next, an opening is provided in said film 10, a drain electrode 7 is fitted to connect with said range 4, and a polycrystalline Si capacity section electrode 8 is buried in said recess 12. Thereafter, thick film SiO2 film 13 is formed between said electrodes 6, 7 and 8, and electrodes 6', 7' and 8' are made by increasing said electrodes 6, 7 and 8 in volume.
JP8435478A1978-07-111978-07-11Semiconductor memoryPendingJPS5511365A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8435478AJPS5511365A (en)1978-07-111978-07-11Semiconductor memory

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8435478AJPS5511365A (en)1978-07-111978-07-11Semiconductor memory

Publications (1)

Publication NumberPublication Date
JPS5511365Atrue JPS5511365A (en)1980-01-26

Family

ID=13828171

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8435478APendingJPS5511365A (en)1978-07-111978-07-11Semiconductor memory

Country Status (1)

CountryLink
JP (1)JPS5511365A (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS62169362A (en)*1987-01-091987-07-25Agency Of Ind Science & TechnolCapacitor device
US4721987A (en)*1984-07-031988-01-26Texas Instruments IncorporatedTrench capacitor process for high density dynamic RAM
US4751557A (en)*1982-03-101988-06-14Hitachi, Ltd.Dram with FET stacked over capacitor
US4763180A (en)*1986-12-221988-08-09International Business Machines CorporationMethod and structure for a high density VMOS dynamic ram array
JPH02354A (en)*1989-02-081990-01-05Hitachi LtdLarge scale semiconductor memory and its manufacture
JPH0295547U (en)*1988-06-131990-07-30
US4978634A (en)*1989-07-251990-12-18Texas Instruments, IncorporatedMethod of making trench DRAM cell with stacked capacitor and buried lateral contact
US5013676A (en)*1987-04-271991-05-07Nec CorporationStructure of MIS-type field effect transistor and process of fabrication thereof
US5017506A (en)*1989-07-251991-05-21Texas Instruments IncorporatedMethod for fabricating a trench DRAM
US5057887A (en)*1989-05-141991-10-15Texas Instruments IncorporatedHigh density dynamic ram cell
US5102817A (en)*1985-03-211992-04-07Texas Instruments IncorporatedVertical DRAM cell and method
US5105245A (en)*1988-06-281992-04-14Texas Instruments IncorporatedTrench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5109259A (en)*1987-09-221992-04-28Texas Instruments IncorporatedMultiple DRAM cells in a trench
US5111259A (en)*1989-07-251992-05-05Texas Instruments IncorporatedTrench capacitor memory cell with curved capacitors
US5164917A (en)*1985-06-261992-11-17Texas Instruments IncorporatedVertical one-transistor DRAM with enhanced capacitance and process for fabricating
US5170234A (en)*1984-07-031992-12-08Texas Instruments IncorporatedHigh density dynamic RAM with trench capacitor
US5208657A (en)*1984-08-311993-05-04Texas Instruments IncorporatedDRAM Cell with trench capacitor and vertical channel in substrate
US5225363A (en)*1988-06-281993-07-06Texas Instruments IncorporatedTrench capacitor DRAM cell and method of manufacture
US5273648A (en)*1992-07-151993-12-28Caiozza Joseph CFilter cartridge magnetic belt
US5354462A (en)*1992-04-101994-10-11Shane Marie OwenMagnetic filter strap
US5714063A (en)*1996-05-281998-02-03Brunsting; William J.Apparatus for the removal of ferrous particles from liquids

Cited By (22)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4751557A (en)*1982-03-101988-06-14Hitachi, Ltd.Dram with FET stacked over capacitor
US5170234A (en)*1984-07-031992-12-08Texas Instruments IncorporatedHigh density dynamic RAM with trench capacitor
US4721987A (en)*1984-07-031988-01-26Texas Instruments IncorporatedTrench capacitor process for high density dynamic RAM
US5374580A (en)*1984-07-031994-12-20Texas Instruments IncorporatedMethod of forming high density DRAM having increased capacitance area due to trench etched into storage capacitor region
US5208657A (en)*1984-08-311993-05-04Texas Instruments IncorporatedDRAM Cell with trench capacitor and vertical channel in substrate
US5102817A (en)*1985-03-211992-04-07Texas Instruments IncorporatedVertical DRAM cell and method
US5164917A (en)*1985-06-261992-11-17Texas Instruments IncorporatedVertical one-transistor DRAM with enhanced capacitance and process for fabricating
US4763180A (en)*1986-12-221988-08-09International Business Machines CorporationMethod and structure for a high density VMOS dynamic ram array
JPS62169362A (en)*1987-01-091987-07-25Agency Of Ind Science & TechnolCapacitor device
US5013676A (en)*1987-04-271991-05-07Nec CorporationStructure of MIS-type field effect transistor and process of fabrication thereof
US5109259A (en)*1987-09-221992-04-28Texas Instruments IncorporatedMultiple DRAM cells in a trench
JPH0295547U (en)*1988-06-131990-07-30
US5105245A (en)*1988-06-281992-04-14Texas Instruments IncorporatedTrench capacitor DRAM cell with diffused bit lines adjacent to a trench
US5225363A (en)*1988-06-281993-07-06Texas Instruments IncorporatedTrench capacitor DRAM cell and method of manufacture
JPH02354A (en)*1989-02-081990-01-05Hitachi LtdLarge scale semiconductor memory and its manufacture
US5057887A (en)*1989-05-141991-10-15Texas Instruments IncorporatedHigh density dynamic ram cell
US5111259A (en)*1989-07-251992-05-05Texas Instruments IncorporatedTrench capacitor memory cell with curved capacitors
US5017506A (en)*1989-07-251991-05-21Texas Instruments IncorporatedMethod for fabricating a trench DRAM
US4978634A (en)*1989-07-251990-12-18Texas Instruments, IncorporatedMethod of making trench DRAM cell with stacked capacitor and buried lateral contact
US5354462A (en)*1992-04-101994-10-11Shane Marie OwenMagnetic filter strap
US5273648A (en)*1992-07-151993-12-28Caiozza Joseph CFilter cartridge magnetic belt
US5714063A (en)*1996-05-281998-02-03Brunsting; William J.Apparatus for the removal of ferrous particles from liquids

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