| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15674076AJPS5379771A (en) | 1976-12-24 | 1976-12-24 | Insoluble anode and its manufacture |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15674076AJPS5379771A (en) | 1976-12-24 | 1976-12-24 | Insoluble anode and its manufacture |
| Publication Number | Publication Date |
|---|---|
| JPS5379771Atrue JPS5379771A (en) | 1978-07-14 |
| JPS5511753B2 JPS5511753B2 (en) | 1980-03-27 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15674076AGrantedJPS5379771A (en) | 1976-12-24 | 1976-12-24 | Insoluble anode and its manufacture |
| Country | Link |
|---|---|
| JP (1) | JPS5379771A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5773193A (en)* | 1980-08-18 | 1982-05-07 | Diamond Shamrock Corp | Coated electrode with dimension stability for electrolysis having oxide protecting film on base of valve metal and production thereof |
| US4618404A (en)* | 1984-11-07 | 1986-10-21 | Oronzio De Nora Impianti Elettrochimici S.P.A. | Electrode for electrochemical processes, method for preparing the same and use thereof in electrolysis cells |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940050A (en)* | 1972-08-17 | 1974-04-15 | ||
| JPS5286979A (en)* | 1975-12-10 | 1977-07-20 | Electronor Corp | Manganese dioxide electrode |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4940050A (en)* | 1972-08-17 | 1974-04-15 | ||
| JPS5286979A (en)* | 1975-12-10 | 1977-07-20 | Electronor Corp | Manganese dioxide electrode |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5773193A (en)* | 1980-08-18 | 1982-05-07 | Diamond Shamrock Corp | Coated electrode with dimension stability for electrolysis having oxide protecting film on base of valve metal and production thereof |
| US4618404A (en)* | 1984-11-07 | 1986-10-21 | Oronzio De Nora Impianti Elettrochimici S.P.A. | Electrode for electrochemical processes, method for preparing the same and use thereof in electrolysis cells |
| US4648946A (en)* | 1984-11-07 | 1987-03-10 | Oronzio De Nora Impianti Elettrochimici S.P.A. | Electrode for electrochemical processes, method for preparing the same and use thereof in electrolysis cells |
| US4668370A (en)* | 1984-11-07 | 1987-05-26 | Oronzio De Nora Implanti Elettrochimici S.P.A. | Electrode for electrochemical processes and use thereof in electrolysis cells |
| Publication number | Publication date |
|---|---|
| JPS5511753B2 (en) | 1980-03-27 |
| Publication | Publication Date | Title |
|---|---|---|
| GB1528373A (en) | Photovoltaic cell | |
| JPS5379771A (en) | Insoluble anode and its manufacture | |
| JPS5437694A (en) | Thermo cell and its manufacture | |
| JPS5661175A (en) | Thin-film solar cell | |
| JPS53126270A (en) | Production of semiconductor devices | |
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| JPS5354996A (en) | Productin of solar battery | |
| JPS5258890A (en) | Power cable | |
| JPS5313444A (en) | Electrochromic indication cell | |
| JPS5362454A (en) | Direct heating type cathode construction | |
| JPS5240962A (en) | Fluorescent tube | |
| JPS5360195A (en) | Photoelectric transducer | |
| JPS5362471A (en) | Semiconductor device | |
| JPS538387A (en) | Nitrogen oxides reduction catalyst | |
| JPS52129279A (en) | Production of semiconductor device | |
| JPS5380161A (en) | Electrode formation of semiconductor | |
| JPS53118389A (en) | Solar battery device and its manufacture | |
| JPS5329680A (en) | Superhigh frequency open type diode device | |
| JPS5423375A (en) | Manufacture of schottky barrier type electrode | |
| JPS5366886A (en) | Catalyst | |
| JPS5376752A (en) | Production of semionductor device | |
| JPS5297679A (en) | Semiconductor rectifying element | |
| JPS51150271A (en) | Flat type multiple digit indicator | |
| JPS5313361A (en) | Manufacture of glass-molded diode | |
| JPS5341174A (en) | Electric plating method onto surface of semi-insulator semiconductor material |