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JPS5366181A - High dielectric strength mis type transistor - Google Patents

High dielectric strength mis type transistor

Info

Publication number
JPS5366181A
JPS5366181AJP14124276AJP14124276AJPS5366181AJP S5366181 AJPS5366181 AJP S5366181AJP 14124276 AJP14124276 AJP 14124276AJP 14124276 AJP14124276 AJP 14124276AJP S5366181 AJPS5366181 AJP S5366181A
Authority
JP
Japan
Prior art keywords
type transistor
high dielectric
dielectric strength
mis type
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14124276A
Other languages
Japanese (ja)
Inventor
Hideshi Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP14124276ApriorityCriticalpatent/JPS5366181A/en
Publication of JPS5366181ApublicationCriticalpatent/JPS5366181A/en
Pendinglegal-statusCriticalCurrent

Links

Abstract

PURPOSE: To produce a MISFET of small on-resistance and high breakdown voltage by disposing an N type layer in adjacent to the N+ type drain layer of an N- type Si substrate and providing the electrode of the same potential as that of the source through an insulation film on the N type layer.
COPYRIGHT: (C)1978,JPO&Japio
JP14124276A1976-11-261976-11-26High dielectric strength mis type transistorPendingJPS5366181A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP14124276AJPS5366181A (en)1976-11-261976-11-26High dielectric strength mis type transistor

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP14124276AJPS5366181A (en)1976-11-261976-11-26High dielectric strength mis type transistor

Publications (1)

Publication NumberPublication Date
JPS5366181Atrue JPS5366181A (en)1978-06-13

Family

ID=15287388

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP14124276APendingJPS5366181A (en)1976-11-261976-11-26High dielectric strength mis type transistor

Country Status (1)

CountryLink
JP (1)JPS5366181A (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS58206164A (en)*1982-05-101983-12-01エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method
JPH01162372A (en)*1987-12-181989-06-26Matsushita Electron CorpMis transistor
US4947232A (en)*1980-03-221990-08-07Sharp Kabushiki KaishaHigh voltage MOS transistor
US5191396A (en)*1978-10-131993-03-02International Rectifier Corp.High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en)*1978-10-131994-08-16International Rectifier CorporationHigh power MOSFET with low on-resistance and high breakdown voltage
US5578509A (en)*1993-04-231996-11-26Mitsubishi Denki Kabushiki KaishaMethod of making a field effect transistor
US5663080A (en)*1991-11-291997-09-02Sgs-Thomson Microelectronics, S.R.L.Process for manufacturing MOS-type integrated circuits
US5744372A (en)*1995-04-121998-04-28National Semiconductor CorporationFabrication of complementary field-effect transistors each having multi-part channel
US5798554A (en)*1995-02-241998-08-25Consorzio Per La Ricerca Sulla Microelettronica Nel MezzogiornoMOS-technology power device integrated structure and manufacturing process thereof
US5817546A (en)*1994-06-231998-10-06Stmicroelectronics S.R.L.Process of making a MOS-technology power device
US5841167A (en)*1995-12-281998-11-24Sgs-Thomson Microelectronics S.R.L.MOS-technology power device integrated structure
US5869371A (en)*1995-06-071999-02-09Stmicroelectronics, Inc.Structure and process for reducing the on-resistance of mos-gated power devices
US5874338A (en)*1994-06-231999-02-23Sgs-Thomson Microelectronics S.R.L.MOS-technology power device and process of making same
US5981343A (en)*1995-10-301999-11-09Sgs-Thomas Microelectronics, S.R.L.Single feature size mos technology power device
US6020227A (en)*1995-09-122000-02-01National Semiconductor CorporationFabrication of multiple field-effect transistor structure having local threshold-adjust doping
US6030870A (en)*1995-10-302000-02-29Sgs-Thomson Microelectronics, S.R.L.High density MOS technology power device
US6228719B1 (en)1995-11-062001-05-08Stmicroelectronics S.R.L.MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en)1998-05-262002-12-10Stmicroelectronics S.R.L.High integration density MOS technology power device structure

Cited By (29)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US5742087A (en)*1978-10-131998-04-21International Rectifier CorporationHigh power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en)*1978-10-131993-03-02International Rectifier Corp.High power mosfet with low on-resistance and high breakdown voltage
US5338961A (en)*1978-10-131994-08-16International Rectifier CorporationHigh power MOSFET with low on-resistance and high breakdown voltage
US5598018A (en)*1978-10-131997-01-28International Rectifier CorporationHigh power MOSFET with low on-resistance and high breakdown voltage
US4947232A (en)*1980-03-221990-08-07Sharp Kabushiki KaishaHigh voltage MOS transistor
JPS58206164A (en)*1982-05-101983-12-01エヌ・ベ−・フイリツプス・フル−イランペンフアブリケン Semiconductor device and its manufacturing method
JPH01162372A (en)*1987-12-181989-06-26Matsushita Electron CorpMis transistor
US5696399A (en)*1991-11-291997-12-09Sgs-Thomson Microelectronics S.R.L.Process for manufacturing MOS-type integrated circuits
US5663080A (en)*1991-11-291997-09-02Sgs-Thomson Microelectronics, S.R.L.Process for manufacturing MOS-type integrated circuits
US5578509A (en)*1993-04-231996-11-26Mitsubishi Denki Kabushiki KaishaMethod of making a field effect transistor
US5817546A (en)*1994-06-231998-10-06Stmicroelectronics S.R.L.Process of making a MOS-technology power device
US5874338A (en)*1994-06-231999-02-23Sgs-Thomson Microelectronics S.R.L.MOS-technology power device and process of making same
US5798554A (en)*1995-02-241998-08-25Consorzio Per La Ricerca Sulla Microelettronica Nel MezzogiornoMOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en)*1995-02-242000-08-29Consorzio Per La Ricerca Sulla Microelettronica Nel MezzogiornoMOS-technology power device integrated structure and manufacturing process thereof
US6078082A (en)*1995-04-122000-06-20National Semiconductor CorporationField-effect transistor having multi-part channel
US5744372A (en)*1995-04-121998-04-28National Semiconductor CorporationFabrication of complementary field-effect transistors each having multi-part channel
US6576966B1 (en)1995-04-122003-06-10National Semiconductor CorporationField-effect transistor having multi-part channel
US5869371A (en)*1995-06-071999-02-09Stmicroelectronics, Inc.Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en)*1995-06-072000-04-04Stmicroelectronics, Inc.Structure and process for reducing the on-resistance of MOS-gated power devices
US6020227A (en)*1995-09-122000-02-01National Semiconductor CorporationFabrication of multiple field-effect transistor structure having local threshold-adjust doping
US6030870A (en)*1995-10-302000-02-29Sgs-Thomson Microelectronics, S.R.L.High density MOS technology power device
US6054737A (en)*1995-10-302000-04-25Sgs-Thomson Microelectronics S.R.L.High density MOS technology power device
US6064087A (en)*1995-10-302000-05-16Sgs-Thomson Microelectronics, S.R.L.Single feature size MOS technology power device
US5985721A (en)*1995-10-301999-11-16Sgs-Thomson Microelectronics, S.R.L.Single feature size MOS technology power device
US5981343A (en)*1995-10-301999-11-09Sgs-Thomas Microelectronics, S.R.L.Single feature size mos technology power device
US6228719B1 (en)1995-11-062001-05-08Stmicroelectronics S.R.L.MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6051862A (en)*1995-12-282000-04-18Sgs-Thomson Microelectronics S.R.L.MOS-technology power device integrated structure
US5841167A (en)*1995-12-281998-11-24Sgs-Thomson Microelectronics S.R.L.MOS-technology power device integrated structure
US6492691B2 (en)1998-05-262002-12-10Stmicroelectronics S.R.L.High integration density MOS technology power device structure

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