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JPS5326584A - Prod uction of mis semiconductor device - Google Patents

Prod uction of mis semiconductor device

Info

Publication number
JPS5326584A
JPS5326584AJP10057076AJP10057076AJPS5326584AJP S5326584 AJPS5326584 AJP S5326584AJP 10057076 AJP10057076 AJP 10057076AJP 10057076 AJP10057076 AJP 10057076AJP S5326584 AJPS5326584 AJP S5326584A
Authority
JP
Japan
Prior art keywords
semiconductor device
mis semiconductor
prod uction
uction
prod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10057076A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP10057076ApriorityCriticalpatent/JPS5326584A/en
Publication of JPS5326584ApublicationCriticalpatent/JPS5326584A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: A source and a drain layers are formed by the self-alignment system, and contact holes are provided on the side wall face of layers. Then, the hoel aprt is made as small as possible to miniaturize an element, thereby increasing an integration degree.
COPYRIGHT: (C)1978,JPO&Japio
JP10057076A1976-08-251976-08-25Prod uction of mis semiconductor devicePendingJPS5326584A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP10057076AJPS5326584A (en)1976-08-251976-08-25Prod uction of mis semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP10057076AJPS5326584A (en)1976-08-251976-08-25Prod uction of mis semiconductor device

Publications (1)

Publication NumberPublication Date
JPS5326584Atrue JPS5326584A (en)1978-03-11

Family

ID=14277556

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP10057076APendingJPS5326584A (en)1976-08-251976-08-25Prod uction of mis semiconductor device

Country Status (1)

CountryLink
JP (1)JPS5326584A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4533934A (en)*1980-10-021985-08-06Westinghouse Electric Corp.Device structures for high density integrated circuits
US5270567A (en)*1989-09-061993-12-14Casio Computer Co., Ltd.Thin film transistors without capacitances between electrodes thereof
US5470762A (en)*1991-11-291995-11-28Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a thin film transistor
US5663077A (en)*1993-07-271997-09-02Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US6329229B1 (en)1993-11-052001-12-11Semiconductor Energy Laboratory Co., Ltd.Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en)1993-11-052005-05-24Semiconductor Energy Laboratory Co., Ltd.Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7692223B2 (en)2006-04-282010-04-06Semiconductor Energy Laboratory Co., LtdSemiconductor device and method for manufacturing the same

Cited By (11)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4533934A (en)*1980-10-021985-08-06Westinghouse Electric Corp.Device structures for high density integrated circuits
US5270567A (en)*1989-09-061993-12-14Casio Computer Co., Ltd.Thin film transistors without capacitances between electrodes thereof
US5470762A (en)*1991-11-291995-11-28Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a thin film transistor
US5757030A (en)*1991-11-291998-05-26Semiconductor Energy Laboratory Co., Ltd.Thin film transistor with an insulating film having an increased thickness on a periphery of a semiconductor island
US5663077A (en)*1993-07-271997-09-02Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films
US5966594A (en)*1993-07-271999-10-12Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US6465284B2 (en)1993-07-272002-10-15Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same
US6329229B1 (en)1993-11-052001-12-11Semiconductor Energy Laboratory Co., Ltd.Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US6897100B2 (en)1993-11-052005-05-24Semiconductor Energy Laboratory Co., Ltd.Method for processing semiconductor device apparatus for processing a semiconductor and apparatus for processing semiconductor device
US7692223B2 (en)2006-04-282010-04-06Semiconductor Energy Laboratory Co., LtdSemiconductor device and method for manufacturing the same
US8896049B2 (en)2006-04-282014-11-25Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for manufacturing the same

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