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JPS5315081A - Junction type field effect transistor and its production - Google Patents

Junction type field effect transistor and its production

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Publication number
JPS5315081A
JPS5315081AJP8981576AJP8981576AJPS5315081AJP S5315081 AJPS5315081 AJP S5315081AJP 8981576 AJP8981576 AJP 8981576AJP 8981576 AJP8981576 AJP 8981576AJP S5315081 AJPS5315081 AJP S5315081A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
type field
junction type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8981576A
Other languages
Japanese (ja)
Inventor
Takaaki Kitada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co LtdfiledCriticalNEC Corp
Priority to JP8981576ApriorityCriticalpatent/JPS5315081A/en
Publication of JPS5315081ApublicationCriticalpatent/JPS5315081A/en
Pendinglegal-statusCriticalCurrent

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Abstract

PURPOSE: To improve high frequency characteristics by reducing the spacing between source region and gate junction region which determine gate length and source resistivity through controlling of overetching.
COPYRIGHT: (C)1978,JPO&Japio
JP8981576A1976-07-271976-07-27Junction type field effect transistor and its productionPendingJPS5315081A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP8981576AJPS5315081A (en)1976-07-271976-07-27Junction type field effect transistor and its production

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP8981576AJPS5315081A (en)1976-07-271976-07-27Junction type field effect transistor and its production

Publications (1)

Publication NumberPublication Date
JPS5315081Atrue JPS5315081A (en)1978-02-10

Family

ID=13981225

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP8981576APendingJPS5315081A (en)1976-07-271976-07-27Junction type field effect transistor and its production

Country Status (1)

CountryLink
JP (1)JPS5315081A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS55153377A (en)*1979-05-181980-11-29Matsushita Electronics CorpProduction of semiconductor device
JPS5619678A (en)*1979-07-271981-02-24Hitachi LtdJunction-type field effect semiconductor device
JPS57178376A (en)*1981-04-271982-11-02Sumitomo Electric Ind LtdJunction type field-effect transistor
US4380496A (en)*1979-03-221983-04-19Uop Inc.Mechanical dewatering process utilizing a nonuniform screw conveyor
JPS59213172A (en)*1983-05-191984-12-03Matsushita Electric Ind Co LtdSemiconductor device and manufacture thereof
JPS60196182A (en)*1984-03-191985-10-04Sanei Seisakusho:KkDrying of sake lees
JPS60220975A (en)*1984-04-181985-11-05Toshiba Corp GaAs field effect transistor and its manufacturing method
JPH01200680A (en)*1988-02-051989-08-11Hitachi LtdSuperconducting field-effect transistor
JP2012523697A (en)*2009-04-082012-10-04エフィシエント パワー コンヴァーション コーポレーション Enhancement mode GaN HEMT device and manufacturing method thereof

Cited By (10)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US4380496A (en)*1979-03-221983-04-19Uop Inc.Mechanical dewatering process utilizing a nonuniform screw conveyor
JPS55153377A (en)*1979-05-181980-11-29Matsushita Electronics CorpProduction of semiconductor device
JPS5619678A (en)*1979-07-271981-02-24Hitachi LtdJunction-type field effect semiconductor device
JPS57178376A (en)*1981-04-271982-11-02Sumitomo Electric Ind LtdJunction type field-effect transistor
JPS59213172A (en)*1983-05-191984-12-03Matsushita Electric Ind Co LtdSemiconductor device and manufacture thereof
JPS60196182A (en)*1984-03-191985-10-04Sanei Seisakusho:KkDrying of sake lees
JPS60220975A (en)*1984-04-181985-11-05Toshiba Corp GaAs field effect transistor and its manufacturing method
JPH01200680A (en)*1988-02-051989-08-11Hitachi LtdSuperconducting field-effect transistor
JP2012523697A (en)*2009-04-082012-10-04エフィシエント パワー コンヴァーション コーポレーション Enhancement mode GaN HEMT device and manufacturing method thereof
US8890168B2 (en)2009-04-082014-11-18Efficient Power Conversion CorporationEnhancement mode GaN HEMT device

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