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JPS52104879A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS52104879A
JPS52104879AJP2114276AJP2114276AJPS52104879AJP S52104879 AJPS52104879 AJP S52104879AJP 2114276 AJP2114276 AJP 2114276AJP 2114276 AJP2114276 AJP 2114276AJP S52104879 AJPS52104879 AJP S52104879A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
mask
drain regions
preventing film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2114276A
Other languages
Japanese (ja)
Inventor
Yoshiaki Kamigaki
Hideo Sunami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP2114276ApriorityCriticalpatent/JPS52104879A/en
Publication of JPS52104879ApublicationCriticalpatent/JPS52104879A/en
Pendinglegal-statusCriticalCurrent

Links

Abstract

PURPOSE: To increase gate withstanding voltage and to decrease variation of threshold voltage by forming a preventing film for impurity doping on a gate electrode for using as a mask, before forming source and drain regions.
COPYRIGHT: (C)1977,JPO&Japio
JP2114276A1976-03-011976-03-01Manufacture of semiconductor devicePendingJPS52104879A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP2114276AJPS52104879A (en)1976-03-011976-03-01Manufacture of semiconductor device

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP2114276AJPS52104879A (en)1976-03-011976-03-01Manufacture of semiconductor device

Publications (1)

Publication NumberPublication Date
JPS52104879Atrue JPS52104879A (en)1977-09-02

Family

ID=12046635

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP2114276APendingJPS52104879A (en)1976-03-011976-03-01Manufacture of semiconductor device

Country Status (1)

CountryLink
JP (1)JPS52104879A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5671973A (en)*1979-11-161981-06-15Nec CorpPreparation method of semiconductor system
JPS5832466A (en)*1981-08-201983-02-25Sanyo Electric Co LtdManufacture of mosfet
JPS6035576A (en)*1984-04-251985-02-23Hitachi Ltd Manufacturing method of MOS semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPS5671973A (en)*1979-11-161981-06-15Nec CorpPreparation method of semiconductor system
JPS5832466A (en)*1981-08-201983-02-25Sanyo Electric Co LtdManufacture of mosfet
JPS6035576A (en)*1984-04-251985-02-23Hitachi Ltd Manufacturing method of MOS semiconductor device

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