【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウエハや各種
ハードディスク、ガラス基板、液晶パネル等の各種被研
磨物を研磨する研磨装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing apparatus for polishing various objects to be polished, such as semiconductor wafers, various hard disks, glass substrates, and liquid crystal panels.
【０００２】[0002]
【従来の技術】従来、半導体集積回路装置の製造工程に
おいて用いられるＣＭＰ（化学機械研磨）装置は、図７
に示すように、回転軸６により回転力を与えられる定盤
４上に取り付けた研磨パッド３の表面に、アーム７に支
持された回転軸５により回転力を与えられるウエハホル
ダ２の下面に保持された半導体ウエハ（被研磨物）１を
押し付けることによって、半導体ウエハ１の被研磨面を
研磨するように構成されている。2. Description of the Related Art Conventionally, a CMP (chemical mechanical polishing) apparatus used in a manufacturing process of a semiconductor integrated circuit device is shown in FIG.
As shown in FIG. 5, the polishing pad 3 is held on the surface of a polishing pad 3 mounted on a surface plate 4 to which a rotating force is applied by a rotating shaft 6, and is held by the lower surface of a wafer holder 2 to which a rotating force is applied by a rotating shaft 5 supported by an arm 7. The polished surface of the semiconductor wafer 1 is polished by pressing the semiconductor wafer (object to be polished) 1.
【０００３】一方上記構造のＣＭＰ装置に用いた研磨パ
ッド３の代わりに、定盤４上に砥石を取り付け、該砥石
によって半導体ウエハ１の被研磨面を研磨するように構
成した研磨装置も開発されている。On the other hand, instead of the polishing pad 3 used in the CMP apparatus having the above structure, a polishing apparatus has been developed in which a grindstone is mounted on a surface plate 4 and the surface to be polished of the semiconductor wafer 1 is polished by the grindstone. ing.
【０００４】[0004]
【発明が解決しようとする課題】ところで従来、研磨パ
ッド（又は砥石）３によって半導体ウエハ１を研磨した
場合、摩擦熱によって該研磨パッド（又は砥石）３の表
面が変形したり、該研磨パッド（又は砥石）３の研磨面
各部の温度分布による研磨能力の差の発生等によって、
半導体ウエハ１の研磨性能が低下してしまうという問題
点があった。Conventionally, when the semiconductor wafer 1 is polished by the polishing pad (or grinding stone) 3, the surface of the polishing pad (or grinding stone) 3 is deformed by frictional heat, or the polishing pad (or grinding stone) 3 is polished. Or a difference in the polishing ability due to the temperature distribution of each part of the polishing surface of the grinding wheel 3)
There is a problem that the polishing performance of the semiconductor wafer 1 is reduced.
【０００５】また研磨装置によって半導体ウエハ１の連
続研磨を行なう場合、研磨パッド（又は砥石）３の研磨
面の研磨時の温度が変化（増加）していくことで、研磨
レートの安定性が得にくいなどの不都合が発生するとい
う問題点もあった。When the semiconductor wafer 1 is continuously polished by a polishing apparatus, the polishing rate of the polishing surface of the polishing pad (or grindstone) 3 changes (increases) so that the polishing rate can be stabilized. There is also a problem that inconveniences such as difficulty occur.
【０００６】これらの問題点を解決するためには研磨パ
ッド（又は砥石）３の温度を一定に保つようにこれを冷
却すれば良いが、従来の冷却手段は、研磨パッド（又は
砥石）３を貼り付ける定盤４の内部に冷媒を流す方法な
ど、主に定盤４を冷却して間接的に研磨パッド（又は砥
石）３を冷却する構造のものであり、冷却効率が良いと
は言えなかった（研磨パッド３は熱伝導性が良くな
い）。In order to solve these problems, the polishing pad (or grindstone) 3 may be cooled so that the temperature of the polishing pad (or grindstone) 3 is kept constant. It has a structure that mainly cools the surface plate 4 and indirectly cools the polishing pad (or grindstone) 3, such as a method of flowing a coolant inside the surface plate 4 to be attached, and cannot be said to have good cooling efficiency. (The polishing pad 3 has poor thermal conductivity.)
【０００７】また前述のように研磨パッド（又は砥石）
３の研磨面には温度分布が生じるが、従来、研磨パッド
（又は砥石）３の各部を各々異なる温度で冷却する簡単
な構造の冷却手段はなかった。[0007] As described above, the polishing pad (or whetstone)
Although a temperature distribution is generated on the polishing surface of No. 3, conventionally, there has been no cooling means having a simple structure for cooling each part of the polishing pad (or whetstone) 3 at different temperatures.
【０００８】本発明は上述の点に鑑みてなされたもので
ありその目的は、構造が簡単で、研磨パッド或いは砥石
表面の温度上昇や温度分布の不均一・熱変形を効率良く
防ぎ、良好な被研磨物の研磨性能が得られる研磨装置を
提供することにある。The present invention has been made in view of the above points, and has as its object a simple structure, which efficiently prevents a rise in the temperature of a polishing pad or a grindstone surface, unevenness and unevenness in temperature distribution, and efficient thermal deformation. An object of the present invention is to provide a polishing apparatus capable of obtaining polishing performance of an object to be polished.
【０００９】[0009]
【課題を解決するための手段】上記問題点を解決するた
め本発明は、定盤に取り付けられた研磨パッド或いは砥
石に、ウエハホルダにより保持された被研磨物を押し付
け、双方の相対運動により被研磨物を研磨する構造の研
磨装置において、前記研磨パッド或いは砥石をその表面
側から冷却又は加熱する機構を備え、前記被研磨物の研
磨によって温度変化した研磨パッド或いは砥石を該機構
によって冷却又は加熱することとした。また本発明は、
前記機構を、研磨パッド或いは砥石の上方に設けた冷却
気体噴出ノズルから該研磨パッド或いは砥石に向けて所
定の温度に調節した気体を噴出する機構によって構成し
た。また本発明は、前記冷却気体噴出ノズルを複数と
し、且つ各冷却気体噴出ノズルを各々独立して気体の温
度調節可能な冷却気体供給装置に結合し、これによって
研磨パッド或いは砥石表面の各部をそれぞれ別々に温度
調節するように構成した。また本発明は前記機構を、内
部に冷媒を流して所定温度に調節する熱交換部材を前記
研磨パッド或いは砥石に接触せしめて構成した。また本
発明は、前記熱交換部材を複数とし、且つ各熱交換部材
を各々独立して温度調節可能な冷媒供給装置に結合し、
これによって研磨パッド或いは砥石表面の各部をそれぞ
れ別々に温度調節するように構成した。また本発明は前
記機構を、研磨パッド或いは砥石の表面に冷却した液体
を供給する冷却液体供給手段によって構成した。また本
発明は、前記冷却液体供給手段を、各々独立して温度調
節可能な液体供給装置から液体を供給するように構成
し、これによって研磨パッド或いは砥石表面の各部をそ
れぞれ別々に温度調節するように構成した。SUMMARY OF THE INVENTION In order to solve the above-mentioned problems, the present invention is directed to a method in which an object to be polished held by a wafer holder is pressed against a polishing pad or a grindstone attached to a surface plate, and the object is polished by a relative movement between the two. In a polishing apparatus having a structure for polishing an object, a mechanism for cooling or heating the polishing pad or the grindstone from the surface side thereof is provided, and the polishing pad or the grindstone whose temperature is changed by polishing the object to be polished is cooled or heated by the mechanism. I decided that. The present invention also provides
The mechanism is constituted by a mechanism for ejecting a gas adjusted to a predetermined temperature toward the polishing pad or the grindstone from a cooling gas ejection nozzle provided above the polishing pad or the grindstone. Further, the present invention provides a plurality of the cooling gas ejection nozzles, and each of the cooling gas ejection nozzles is independently coupled to a cooling gas supply device capable of adjusting the temperature of the gas, whereby each part of the polishing pad or the grindstone surface is respectively connected. It was configured to control the temperature separately. Further, in the present invention, the mechanism is configured such that a heat exchange member for adjusting a predetermined temperature by flowing a refrigerant therein is brought into contact with the polishing pad or the grindstone. Further, the present invention provides a plurality of the heat exchange members, and each of the heat exchange members is coupled to a refrigerant supply device capable of independently adjusting the temperature,
Thus, the temperature of each part of the polishing pad or the surface of the grindstone was separately adjusted. In the present invention, the mechanism is constituted by cooling liquid supply means for supplying a cooled liquid to the surface of the polishing pad or the grindstone. Further, in the present invention, the cooling liquid supply means is configured to supply the liquid from a liquid supply device capable of independently controlling the temperature, whereby the respective portions of the polishing pad or the grindstone surface are separately controlled in temperature. Configured.
【００１０】[0010]
【発明の実施の形態】以下、本発明の実施形態を図面に
基づいて詳細に説明する。図１は本発明の第一実施形態
にかかる研磨装置の主要部を示す簡略図であり、同図
（ａ）は要部平面図、同図（ｂ）は同図（ａ）のＡ矢視
図、同図（ｃ）は同図（ａ）のＢ矢視図である。なお研
磨装置全体の構造は前記図７に示す研磨装置と同様なの
で、同一部分には同一符号を付す。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a simplified view showing a main part of a polishing apparatus according to a first embodiment of the present invention. FIG. 1 (a) is a plan view of a main part, and FIG. FIG. 3C is a view taken in the direction of the arrow B in FIG. Since the overall structure of the polishing apparatus is the same as that of the polishing apparatus shown in FIG. 7, the same parts are denoted by the same reference numerals.
【００１１】即ちこの研磨装置も、定盤４に取り付けた
研磨パッド或いは砥石３に、ウエハホルダ２により保持
された半導体ウエハ（被研磨物）１を押し付け、双方を
それぞれ回転駆動することによって半導体ウエハ１を研
磨する構造の研磨装置である。That is, this polishing apparatus also presses the semiconductor wafer (object to be polished) 1 held by the wafer holder 2 against a polishing pad or a grindstone 3 attached to a surface plate 4 and rotates both of them to rotate the semiconductor wafer 1. This is a polishing apparatus having a structure for polishing the substrate.
【００１２】そして本実施形態の場合はさらに、研磨パ
ッド或いは砥石３の上であって、研磨パッド或いは砥石
３の回転方向ｈに対してウエハホルダ２が設置されてい
る部分よりも前方に、冷却気体噴出装置８が設置されて
いる。In the case of this embodiment, the cooling gas is further provided on the polishing pad or the grindstone 3 and in front of the portion where the wafer holder 2 is installed in the rotation direction h of the polishing pad or the grindstone 3. An ejection device 8 is provided.
【００１３】冷却気体噴出装置８には、４つの冷却気体
噴出ノズル９が一列もしくは図示しないが複数列に取り
付けられており、これら各冷却気体噴出ノズル９は冷却
気体噴出装置８の内部において１本に集合された後、冷
却気体用配管１０を介して冷却気体供給装置１１に接続
されている。The cooling gas jetting device 8 is provided with four cooling gas jetting nozzles 9 in one row or a plurality of rows (not shown), and each of the cooling gas jetting nozzles 9 is one inside the cooling gas jetting device 8. Are connected to a cooling gas supply device 11 via a cooling gas pipe 10.
【００１４】これら冷却気体噴出装置８、冷却気体噴出
ノズル９、冷却気体用配管１０及び冷却気体供給装置１
１によって冷却機構が構成されるが、この冷却機構は、
図１（ｃ）に示すように、その冷却気体供給装置１１の
部分がアーム７に取り付けられており、アーム７の揺動
と共に移動するように構成されている。なお１列の冷却
気体噴出ノズル９は、研磨パッド或いは砥石３の研磨軌
跡上をその幅方向にほぼまたぐように設置されている。The cooling gas ejection device 8, the cooling gas ejection nozzle 9, the cooling gas pipe 10, and the cooling gas supply device 1
1 constitutes a cooling mechanism.
As shown in FIG. 1C, a portion of the cooling gas supply device 11 is attached to the arm 7 and is configured to move with the swing of the arm 7. The cooling gas jet nozzles 9 in one row are installed so as to substantially straddle the polishing trajectory of the polishing pad or the grindstone 3 in the width direction.
【００１５】そして研磨パッド或いは砥石３に半導体ウ
エハ１を押し付けて双方の相対運動により半導体ウエハ
１を研磨している最中に、前記冷却気体供給装置１１か
ら供給された所定の温度に冷却された気体を各冷却気体
噴出ノズル９から研磨パッド或いは砥石３に向けて噴出
すれば、研磨パッド或いは砥石３の研磨に供する部分が
半導体ウエハ１を研磨する直前の位置で所定の温度に冷
却され、従って常に一定温度の研磨パッド或いは砥石３
の表面によって半導体ウエハ１の研磨が行なえ、良好な
半導体ウエハ１の研磨性能が得られる。While the semiconductor wafer 1 is pressed against the polishing pad or the grindstone 3 and the semiconductor wafer 1 is being polished by the relative movement of both, the semiconductor wafer 1 is cooled to a predetermined temperature supplied from the cooling gas supply device 11. If a gas is jetted from each cooling gas jet nozzle 9 toward the polishing pad or the grindstone 3, the portion of the polishing pad or the grindstone 3 to be polished is cooled to a predetermined temperature at a position immediately before polishing the semiconductor wafer 1. Polishing pad or whetstone 3 always at a constant temperature
The surface of the semiconductor wafer 1 can be polished by the surface thereof, and good polishing performance of the semiconductor wafer 1 can be obtained.
【００１６】特に本実施形態の場合、研磨パッド或いは
砥石３の表面を直接冷却する構造なので必要なときに即
座にその冷却ができるばかりか、定盤４等の他の部材を
冷却する必要がないので冷却効率が良い。In particular, in the case of this embodiment, since the surface of the polishing pad or the grindstone 3 is directly cooled, not only can it be cooled immediately when necessary, but also there is no need to cool other members such as the platen 4. Good cooling efficiency.
【００１７】さらに研磨パッド或いは砥石３の表面の研
磨時の温度を赤外線表面温度計（放射温度計）でリアル
タイムで測定し、その計測情報を冷却機構にフィードバ
ックすることによって研磨パッド或いは砥石３の表面の
温度管理を行うことで研磨性能の制御ができる。Further, the temperature at the time of polishing the surface of the polishing pad or the grindstone 3 is measured in real time with an infrared surface thermometer (radiation thermometer), and the measured information is fed back to the cooling mechanism to thereby obtain the surface of the polishing pad or the grindstone 3. By controlling the temperature, the polishing performance can be controlled.
【００１８】なおウエハホルダ２を研磨パッド或いは砥
石３上で揺動させながら研磨を行なうような場合でも、
この実施形態の場合は揺動するアーム７と一体に冷却機
構も揺動するので、常に半導体ウエハ１の直前位置にお
いて冷却気体を噴出できる。Even when the polishing is performed while swinging the wafer holder 2 on the polishing pad or the grindstone 3,
In the case of this embodiment, the cooling mechanism also swings together with the swinging arm 7, so that the cooling gas can always be jetted immediately before the semiconductor wafer 1.
【００１９】図２は第二実施形態の主要部を示す簡略図
であり、図１（ｂ）に相当する部分を示す図である。こ
の実施形態において前記第一実施形態と相違する点は、
４つの冷却気体噴出ノズル９を各々独立して別々の冷却
気体用配管１０及び冷却気体供給装置１１に結合して構
成した点である。FIG. 2 is a simplified view showing a main part of the second embodiment, and is a view showing a part corresponding to FIG. 1 (b). This embodiment is different from the first embodiment in that:
The point is that the four cooling gas jet nozzles 9 are each independently connected to a separate cooling gas pipe 10 and a cooling gas supply device 11.
【００２０】このように構成すれば、各冷却気体供給装
置１１の設定温度を変更することで、各冷却気体噴出ノ
ズル９から噴出される気体の温度をそれぞれ別々に設定
することが可能となり、研磨パッド或いは砥石３の場所
による温度調整が可能となる。そして同じ半導体ウエハ
１の研磨軌跡内であってもその部分によって研磨パッド
或いは砥石３の表面温度が異なる場合があるが、このよ
うな場合であっても研磨軌跡内の各部の温度が均一にな
るように調整することが可能となる。With this configuration, by changing the set temperature of each cooling gas supply device 11, the temperature of the gas ejected from each cooling gas ejection nozzle 9 can be set separately, and polishing can be performed. The temperature can be adjusted depending on the position of the pad or the grindstone 3. Even in the polishing locus of the same semiconductor wafer 1, the surface temperature of the polishing pad or the grindstone 3 may be different depending on the portion. Even in such a case, the temperature of each part in the polishing locus becomes uniform. Can be adjusted as follows.
【００２１】図３は本発明の第三実施形態にかかる研磨
装置の主要部を示す簡略図であり、同図（ａ）は要部平
面図、同図（ｂ）は同図（ａ）のＣ矢視図、同図（ｃ）
は同図（ａ）のＤ矢視図である。なお研磨装置全体の構
造は前記図７に示す研磨装置と同様なので、同一部分に
は同一符号を付す。FIG. 3 is a simplified view showing a main part of a polishing apparatus according to a third embodiment of the present invention. FIG. 3 (a) is a plan view of a main part, and FIG. 3 (b) is a plan view of FIG. View from arrow C, FIG.
FIG. 3 is a view as viewed from the direction of the arrow D in FIG. Since the overall structure of the polishing apparatus is the same as that of the polishing apparatus shown in FIG. 7, the same parts are denoted by the same reference numerals.
【００２２】本実施形態の場合は、研磨パッド或いは砥
石３の上であって、研磨パッド或いは砥石３の回転方向
ｉに対してウエハホルダ２が設置されている部分よりも
前方に、熱交換部材１２が設置されている。In the case of this embodiment, the heat exchange member 12 is located on the polishing pad or the grindstone 3 and ahead of the portion where the wafer holder 2 is installed in the rotation direction i of the polishing pad or the grindstone 3. Is installed.
【００２３】熱交換部材１２は熱伝導性の優れた材料
（例えば銅）を直方体形状に形成して構成されており、
該熱交換部材１２と冷媒供給装置１４との間に冷媒用配
管１３を接続してその内部に水等の冷媒を循環するよう
にしている。The heat exchange member 12 is formed by forming a material having excellent heat conductivity (eg, copper) into a rectangular parallelepiped shape.
A refrigerant pipe 13 is connected between the heat exchange member 12 and the refrigerant supply device 14 to circulate a refrigerant such as water therein.
【００２４】これら熱交換部材１２と冷媒用配管１３と
冷媒供給装置１４とによって冷却機構が構成されるが、
この冷却機構は、図３（ｃ）に示すように、その冷媒供
給装置１４の部分がアーム７に取り付けられており、ア
ーム７の揺動と共に移動するように構成されている。な
お熱交換部材１２が研磨パッド或いは砥石３の研磨軌跡
上をその幅方向にほぼまたぐように設置されている点は
第一実施形態と同様である。The heat exchange member 12, the refrigerant pipe 13, and the refrigerant supply device 14 constitute a cooling mechanism.
As shown in FIG. 3C, the cooling mechanism has a portion of the refrigerant supply device 14 attached to the arm 7, and is configured to move with the swing of the arm 7. It is to be noted that the heat exchange member 12 is provided so as to substantially straddle the polishing trajectory of the polishing pad or the grindstone 3 in the width direction as in the first embodiment.
【００２５】そして研磨パッド或いは砥石３に半導体ウ
エハ１を押し付けて双方の相対運動により半導体ウエハ
１を研磨している最中に、冷媒供給装置１４より冷媒用
配管１３を介して冷媒が循環されて熱交換部材１２が冷
却され、これに接触している研磨パッド或いは砥石３の
研磨に供する部分が半導体ウエハ１を研磨する直前の位
置で所定の温度に冷却される。従って常に一定温度の研
磨パッド或いは砥石３の表面によって半導体ウエハ１の
研磨が行なえ、良好な半導体ウエハ１の研磨性能が得ら
れる。While the semiconductor wafer 1 is being pressed against the polishing pad or the grindstone 3 and the semiconductor wafer 1 is being polished by the relative movement between the two, the refrigerant is circulated from the refrigerant supply device 14 via the refrigerant pipe 13. The heat exchange member 12 is cooled, and a portion of the polishing pad or the grindstone 3 that is in contact with the heat exchange member 12 is cooled to a predetermined temperature immediately before polishing the semiconductor wafer 1. Therefore, the semiconductor wafer 1 can be polished by the polishing pad or the surface of the grindstone 3 at a constant temperature, and good polishing performance of the semiconductor wafer 1 can be obtained.
【００２６】本実施形態の場合も、研磨パッド或いは砥
石３の表面を直接冷却する構造なので必要なときに即座
にその冷却ができるばかりか、定盤４等の他の部材を冷
却する必要がないので冷却効率が良い。またウエハホル
ダ２を揺動させながら研磨を行なう場合でも、揺動する
アーム７と一体に冷却機構も揺動するので、常に半導体
ウエハ１の直前位置において冷却気体を噴出できる。Also in the case of this embodiment, since the surface of the polishing pad or the grindstone 3 is directly cooled, not only can it be cooled immediately when necessary, but also there is no need to cool other members such as the surface plate 4. Good cooling efficiency. Even when polishing is performed while the wafer holder 2 is oscillating, the cooling mechanism also oscillates integrally with the oscillating arm 7, so that the cooling gas can always be jetted immediately before the semiconductor wafer 1.
【００２７】図４は第四実施形態の主要部を示す簡略図
であり、図３（ｂ）に相当する部分を示す図である。こ
の実施形態において前記第三実施形態と相違する点は、
熱交換部材１２を各々断熱設置された３つの熱交換部材
１２によって構成した点と、各々の熱交換部材１２に対
して別々の冷媒用配管１３によってそれぞれ温度調整が
可能な冷媒供給装置１４を接続した点である。FIG. 4 is a simplified view showing a main part of the fourth embodiment, and is a view showing a part corresponding to FIG. 3 (b). This embodiment is different from the third embodiment in that:
A point in which the heat exchange member 12 is constituted by three heat exchange members 12 each provided with heat insulation, and a refrigerant supply device 14 capable of adjusting the temperature by a separate refrigerant pipe 13 for each heat exchange member 12 is connected. That is the point.
【００２８】このように構成すれば、各冷媒供給装置１
４の設定温度を変更することで、各熱交換部材１２の温
度をそれぞれ別々に設定することが可能となり、研磨パ
ッド或いは砥石３の場所による温度調整が可能となり、
木目細かく研磨軌跡内の各部の温度を均一になるように
調整することが可能となる。With this configuration, each refrigerant supply device 1
By changing the set temperature of 4, the temperature of each heat exchange member 12 can be set separately, and the temperature can be adjusted depending on the location of the polishing pad or the grindstone 3,
It is possible to finely adjust the temperature of each part in the polishing locus to be uniform.
【００２９】図５は本発明の第五実施形態にかかる研磨
装置の主要部を示す簡略図であり、同図（ａ）は要部平
面図、同図（ｂ）は同図（ａ）のＥ矢視図、同図（ｃ）
は同図（ａ）のＦ矢視図である。なお研磨装置全体の構
造は前記図７に示す研磨装置と同様なので、同一部分に
は同一符号を付す。FIG. 5 is a simplified view showing a main part of a polishing apparatus according to a fifth embodiment of the present invention. FIG. 5 (a) is a plan view of a main part, and FIG. 5 (b) is a plan view of FIG. View from arrow E, FIG.
FIG. 4 is a view as viewed from the direction of the arrow F in FIG. Since the overall structure of the polishing apparatus is the same as that of the polishing apparatus shown in FIG. 7, the same parts are denoted by the same reference numerals.
【００３０】本実施形態の場合は、研磨パッド或いは砥
石３の上であって研磨パッド或いは砥石３の回転方向ｊ
に対してウエハホルダ２が設置されている部分よりも前
方に、冷却液体滴下装置１５が設置されている。In the case of this embodiment, the rotational direction j of the polishing pad or the grindstone 3 is on the polishing pad or the grindstone 3.
In front of the portion where the wafer holder 2 is installed, a cooling liquid dropping device 15 is installed.
【００３１】そして冷却液体滴下装置１５はその下面に
一列に４つの冷却液体滴下ノズル１６を配列設置し、そ
の上面からは各冷却液体滴下ノズル１６を集合した１本
の冷却液体用配管１７を冷却液体供給装置１８に接続す
ることで冷却機構（冷却液体供給手段）が構成されてい
る。The cooling liquid dropping device 15 has four cooling liquid dropping nozzles 16 arranged in a row on the lower surface thereof, and a cooling liquid pipe 17 in which the cooling liquid dropping nozzles 16 are assembled is cooled from the upper surface thereof. A cooling mechanism (cooling liquid supply means) is configured by connecting to the liquid supply device 18.
【００３２】この冷却機構も図５（ｃ）に示すようにそ
の冷却液体供給装置１８がアーム７に取り付けられてお
り、また冷却液体滴下装置１５は研磨パッド或いは砥石
３の研磨軌跡上をその幅方向にほぼまたぐように設置さ
れている点は第一実施形態等と同様である。As shown in FIG. 5 (c), this cooling mechanism also has a cooling liquid supply device 18 attached to the arm 7, and a cooling liquid dropping device 15 having a width corresponding to the width of the polishing path of the polishing pad or grindstone 3 on the polishing path. It is similar to the first embodiment and the like in that it is installed so as to substantially straddle the direction.
【００３３】そして研磨パッド或いは砥石３に半導体ウ
エハ１を押し付けて双方の相対運動により半導体ウエハ
１を研磨している最中に、冷却液体供給装置１８より冷
却液体用配管１７を介して冷却液体（スラリや水など）
を供給し、これが各冷却液体滴下ノズル１６より滴下さ
れる。これによって研磨パッド或いは砥石３の研磨に供
する部分が半導体ウエハ１を研磨する直前の位置で所定
の温度に冷却される。従って常に一定温度の研磨パッド
或いは砥石３の表面によって半導体ウエハ１の研磨が行
なえ、良好な半導体ウエハ１の研磨性能が得られる。While the semiconductor wafer 1 is pressed against the polishing pad or the grindstone 3 and the semiconductor wafer 1 is being polished by the relative movement between the two, the cooling liquid is supplied from the cooling liquid supply device 18 via the cooling liquid pipe 17. Slurry, water, etc.)
Which is dropped from each cooling liquid drop nozzle 16. As a result, the portion of the polishing pad or the grindstone 3 to be polished is cooled to a predetermined temperature just before polishing the semiconductor wafer 1. Therefore, the semiconductor wafer 1 can be polished by the polishing pad or the surface of the grindstone 3 at a constant temperature, and good polishing performance of the semiconductor wafer 1 can be obtained.
【００３４】本実施形態の場合も、研磨パッド或いは砥
石３の表面を直接冷却する構造なので必要なときに即座
にその冷却ができるばかりか、定盤４等の他の部材を冷
却する必要がないので冷却効率が良い。またウエハホル
ダ２を揺動させながら研磨を行なう場合でも、揺動する
アーム７と一体に冷却機構も揺動するので、常に半導体
ウエハ１の直前位置において冷却液体を滴下できる。Also in this embodiment, since the surface of the polishing pad or the grindstone 3 is directly cooled, not only can it be cooled immediately when necessary, but also there is no need to cool other members such as the platen 4. Good cooling efficiency. Also, even when polishing is performed while the wafer holder 2 is oscillating, the cooling mechanism also oscillates integrally with the oscillating arm 7, so that the cooling liquid can always be dropped at the position immediately before the semiconductor wafer 1.
【００３５】図６は第六実施形態の主要部を示す簡略図
であり、図５（ｂ）に相当する部分を示す図である。こ
の実施形態において前記第五実施形態と相違する点は、
４つの冷却液体滴下ノズル１６に対して各々温度調整が
可能な冷却液体供給装置１８を、冷却液体用配管１７に
よって接続した点である。FIG. 6 is a simplified view showing a main part of the sixth embodiment, and is a view showing a part corresponding to FIG. 5 (b). This embodiment is different from the fifth embodiment in that:
The cooling liquid supply device 18 capable of adjusting the temperature of each of the four cooling liquid drop nozzles 16 is connected by a cooling liquid pipe 17.
【００３６】このように構成しても、各冷却液体供給装
置１８の設定温度を変更することで、各冷却液体滴下ノ
ズル１６から噴出される液体の温度をそれぞれ別々に設
定することが可能となり、研磨パッド或いは砥石３の場
所による温度調整が可能となり、木目細かく研磨軌跡内
の各部の温度を均一になるように調整することが可能と
なる。Even with such a configuration, by changing the set temperature of each cooling liquid supply device 18, the temperature of the liquid ejected from each cooling liquid drop nozzle 16 can be set separately. The temperature can be adjusted depending on the location of the polishing pad or the grindstone 3, and the temperature of each part in the polishing locus can be finely adjusted to be uniform.
【００３７】なお上記実施形態は冷却機構を設置する例
を示したが、場合によってはその代りに、研磨パッド或
いは砥石の表面温度を均一にするなどの目的のため、加
熱機構を設置しても良い。その場合は使用する気体や液
体や冷媒を何れも加熱して使用する。In the above embodiment, an example in which a cooling mechanism is provided has been described. However, in some cases, a heating mechanism may be provided for the purpose of making the surface temperature of the polishing pad or the grindstone uniform. good. In that case, the gas, liquid, or refrigerant to be used is heated and used.
【００３８】なお上記各実施形態ではウエハホルダ２と
研磨パッド３（もしくは砥石）の相対運動として、それ
ぞれの回転運動の組合せ運動を示しているが、ウエハホ
ルダ２と研磨パッド３の相対運動としては、それぞれの
運動が、回転運動と揺動の複合運動に対しての回転運
動、直線運動に対しての直線運動、直線運動に対しての
回転運動、回転運動に対しての直線運動、またはランダ
ム運動に対しての回転運動、ランダム運動に対しての直
線運動等またはこれらの組合せが挙げられる。In each of the above-described embodiments, the relative movement between the wafer holder 2 and the polishing pad 3 (or the grindstone) is a combination of the respective rotational movements. However, the relative movement between the wafer holder 2 and the polishing pad 3 is as follows. The movement of the object is the rotation movement for the combined movement of the rotation movement and the swing, the linear movement for the linear movement, the rotation movement for the linear movement, the linear movement for the rotation movement, or the random movement. Rotation movement, random movement with respect to random movement, or a combination thereof.
【００３９】[0039]
【発明の効果】以上詳細に説明したように本発明によれ
ば以下のような優れた効果を有する。 研磨パッド或いは砥石の表面を直接冷却（又は加熱）
する構造なので、必要なときに即座にその冷却（又は加
熱）ができて研磨パッド或いは砥石表面の温度上昇や温
度分布の不均一、熱変形を迅速に防止し、良好な研磨性
能が得られるばかりか、定盤等の他の部材を冷却（又は
加熱）する必要がないので冷却（又は加熱）効率が良
い。As described in detail above, the present invention has the following excellent effects. Cooling (or heating) the surface of the polishing pad or grindstone directly
The structure can be quickly cooled (or heated) when necessary, quickly raising the temperature of the polishing pad or grindstone surface, uneven temperature distribution, and rapid thermal deformation, and good polishing performance can be obtained. Alternatively, there is no need to cool (or heat) other members such as a surface plate, so that cooling (or heating) efficiency is high.
【００４０】特に研磨パッド或いは砥石表面の各部を
それぞれ別々に温度調節するように構成した場合は、研
磨パッド或いは砥石の場所による温度調整が可能とな
り、さらに木目細かく研磨軌跡内の各部の温度を均一に
なるように調整することが可能になる。In particular, when the temperature of each part of the polishing pad or the surface of the grinding stone is separately adjusted, the temperature can be adjusted depending on the location of the polishing pad or the grinding stone, and the temperature of each part in the polishing locus can be finely adjusted evenly. It can be adjusted so that
【００４１】何れの機構も構造が簡単である。Each mechanism has a simple structure.
【図１】本発明の第一実施形態にかかる研磨装置の主要
部を示す簡略図であり、同図（ａ）は要部平面図、同図
（ｂ）は同図（ａ）のＡ矢視図、同図（ｃ）は同図
（ａ）のＢ矢視図である。FIG. 1 is a simplified view showing a main part of a polishing apparatus according to a first embodiment of the present invention. FIG. 1 (a) is a plan view of a main part, and FIG. 1 (b) is an arrow A in FIG. FIG. 3C is a view as viewed from the direction indicated by the arrow B in FIG.
【図２】第二実施形態の主要部を示す簡略図である。FIG. 2 is a simplified diagram showing a main part of a second embodiment.
【図３】本発明の第三実施形態にかかる研磨装置の主要
部を示す簡略図であり、同図（ａ）は要部平面図、同図
（ｂ）は同図（ａ）のＣ矢視図、同図（ｃ）は同図
（ａ）のＤ矢視図である。FIG. 3 is a simplified view showing a main part of a polishing apparatus according to a third embodiment of the present invention, wherein FIG. 3 (a) is a plan view of a main part, and FIG. 3 (b) is an arrow C in FIG. FIG. 3C is a view as viewed from the direction indicated by the arrow D in FIG.
【図４】第四実施形態の主要部を示す簡略図である。FIG. 4 is a simplified diagram showing a main part of a fourth embodiment.
【図５】本発明の第五実施形態にかかる研磨装置の主要
部を示す簡略図であり、同図（ａ）は要部平面図、同図
（ｂ）は同図（ａ）のＥ矢視図、同図（ｃ）は同図
（ａ）のＦ矢視図である。FIG. 5 is a simplified view showing a main part of a polishing apparatus according to a fifth embodiment of the present invention, wherein FIG. 5 (a) is a plan view of a main part, and FIG. 5 (b) is an arrow E in FIG. FIG. 2C is a view as viewed from the direction of the arrow F in FIG.
【図６】第六実施形態の主要部を示す簡略図である。FIG. 6 is a simplified diagram showing a main part of a sixth embodiment.
【図７】研磨装置の全体簡略図である。FIG. 7 is an overall simplified view of a polishing apparatus.
１ 半導体ウエハ（被研磨物） ２ ウエハホルダ ３ 研磨パッド或いは砥石 ４ 定盤 ７ アーム ８ 冷却気体噴出装置（冷却機構） ９ 冷却気体噴出ノズル（冷却機構） １０ 冷却気体用配管（冷却機構） １１ 冷却気体供給装置（冷却機構） １２ 熱交換部材（冷却機構） １３ 冷媒用配管（冷却機構） １４ 冷媒供給装置（冷却機構） １５ 冷却液体滴下装置（冷却液体供給手段／冷却機
構） １６ 冷却液体滴下ノズル（冷却液体供給手段／冷却機
構） １７ 冷却液体用配管（冷却液体供給手段／冷却機構） １８ 冷却液体供給装置（冷却液体供給手段／冷却機
構）Reference Signs List 1 semiconductor wafer (object to be polished) 2 wafer holder 3 polishing pad or grindstone 4 surface plate 7 arm 8 cooling gas jetting device (cooling mechanism) 9 cooling gas jetting nozzle (cooling mechanism) 10 pipe for cooling gas (cooling mechanism) 11 cooling gas Supply device (cooling mechanism) 12 Heat exchange member (cooling mechanism) 13 Refrigerant pipe (cooling mechanism) 14 Refrigerant supply device (cooling mechanism) 15 Cooling liquid dropping device (cooling liquid supply means / cooling mechanism) 16 Cooling liquid dropping nozzle ( (Cooling liquid supply means / cooling mechanism) 17 Cooling liquid pipe (cooling liquid supply means / cooling mechanism) 18 Cooling liquid supply device (cooling liquid supply means / cooling mechanism)
───────────────────────────────────────────────────── フロントページの続き (72)発明者 廣川 一人 神奈川県藤沢市本藤沢４丁目２番１号 株 式会社荏原総合研究所内 ────────────────────────────────────────────────── ─── Continued on the front page (72) Inventor Hitoshi Hirokawa 4-2-1 Motofujisawa, Fujisawa-shi, Kanagawa Inside Ebara Research Institute, Ltd.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16249298AJPH11347935A (en) | 1998-06-10 | 1998-06-10 | Polishing device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16249298AJPH11347935A (en) | 1998-06-10 | 1998-06-10 | Polishing device |
| Publication Number | Publication Date |
|---|---|
| JPH11347935Atrue JPH11347935A (en) | 1999-12-21 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16249298APendingJPH11347935A (en) | 1998-06-10 | 1998-06-10 | Polishing device |
| Country | Link |
|---|---|
| JP (1) | JPH11347935A (en) |
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|---|---|---|---|---|
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| US6402597B1 (en) | 1999-05-31 | 2002-06-11 | Ebara Corporation | Polishing apparatus and method |
| US6544111B1 (en) | 1998-01-30 | 2003-04-08 | Ebara Corporation | Polishing apparatus and polishing table therefor |
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| KR20200104867A (en) | 2018-01-12 | 2020-09-04 | 니타 듀폰 가부시키가이샤 | Polishing pad |
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| US6544111B1 (en) | 1998-01-30 | 2003-04-08 | Ebara Corporation | Polishing apparatus and polishing table therefor |
| US6402597B1 (en) | 1999-05-31 | 2002-06-11 | Ebara Corporation | Polishing apparatus and method |
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| US7837534B2 (en) | 2007-06-13 | 2010-11-23 | Ebara Corporation | Apparatus for heating or cooling a polishing surface of a polishing apparatus |
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| JP2015131361A (en)* | 2014-01-10 | 2015-07-23 | 株式会社東芝 | Polishing device and polishing method |
| KR20200104867A (en) | 2018-01-12 | 2020-09-04 | 니타 듀폰 가부시키가이샤 | Polishing pad |
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