【０００１】[0001]
【発明の属する技術分野】本発明は、コンデンサ内蔵基
板およびその製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate with a built-in capacitor and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年の機器の小型化の進展により、半導
体ＩＣやその他の部品を多層配線基板上に高密度に実装
する事が求められ、これに対応して多層配線基板自体に
も様々な要求が寄せられている。2. Description of the Related Art Recent advances in miniaturization of equipment have required the mounting of semiconductor ICs and other components on a multilayer wiring board at a high density. A request has been received.
【０００３】多層配線基板は、ガラスエポキシ等の有機
材料が主体となる有機系基板と、アルミナ等のセラミッ
クスやガラスが主体となる無機系基板に大きく分類でき
る。この内、無機系基板の製造方法は、まず原料となる
アルミナ等の無機粉末を、有機高分子よりなるバインダ
や溶媒と混合し、これをシート状に成形して、グリーン
シート成形体を作製する。次に層間を接続するビア導体
を形成するため、このシートに、パンチング等の方法で
貫通孔を開け、この穴を、銅や銀等の導電性金属あるい
はその前駆体を含むペーストで充填する。またシートの
表面に、印刷等の方法で、やはり導電性金属あるいはそ
の前駆体を含む回路パターンを形成する。こうして作製
した複数のシートを積層し、まず低温での熱処理によ
り、シートや導体に含まれる有機成分を分解消失させ、
さらに高温で熱処理して、無機成分を焼結させ、内部に
配線導体を有する無機多層基板とする方法が一般的であ
る。[0003] Multilayer wiring boards can be broadly classified into organic substrates mainly composed of organic materials such as glass epoxy and inorganic substrates mainly composed of ceramics and glass such as alumina. Among these, the method of manufacturing an inorganic substrate first mixes an inorganic powder such as alumina as a raw material with a binder or a solvent made of an organic polymer, and shapes this into a sheet to produce a green sheet molded body. . Next, in order to form a via conductor for connecting the layers, a through hole is formed in the sheet by punching or the like, and the hole is filled with a paste containing a conductive metal such as copper or silver or a precursor thereof. Further, a circuit pattern also containing a conductive metal or a precursor thereof is formed on the surface of the sheet by a method such as printing. By laminating a plurality of sheets produced in this way, first heat treatment at a low temperature to decompose and eliminate the organic components contained in the sheets and conductors,
In general, a method of heat-treating the inorganic component at a high temperature to sinter the inorganic component to obtain an inorganic multilayer substrate having a wiring conductor therein is generally used.
【０００４】この無機系多層基板は、その製造工程上多
層化が容易であり、またビア導体径を小さくする事も容
易である等、高密度実装に適している。また、コンデン
サ等の部品は、基板と同様に無機粉体を成形、焼成して
作製する事が出来るので、基板中の必要な位置に、コン
デンサが内蔵されるように、焼成前のグリーンシート積
層体中に、コンデンサ用誘電体と電極を形成し、これら
を一回の熱処理により同時に一体焼結させてコンデンサ
内蔵基板とする事により、より高密度実装に対応させる
試みもなされている。[0004] This inorganic multilayer substrate is suitable for high-density mounting, for example, it is easy to form a multilayer in the manufacturing process, and it is also easy to reduce the diameter of the via conductor. In addition, parts such as capacitors can be made by molding and firing inorganic powder in the same manner as the substrate, so that the green sheets are laminated before firing so that the capacitors are built in the required positions in the substrate. Attempts have been made to cope with higher-density mounting by forming a capacitor dielectric and electrodes in a body and simultaneously sintering them together by a single heat treatment to form a capacitor-containing substrate.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、無機系
多層基板の主構成要素である無機系絶縁体と、内蔵コン
デンサ用の誘電体は、何れも無機粉末の焼結によって作
製されるものではあるが、両者の組成が異なるものであ
るために、以下の２つの問題点がある。However, the inorganic insulator, which is a main component of the inorganic multilayer substrate, and the dielectric for the built-in capacitor are both manufactured by sintering inorganic powder. However, since the two have different compositions, there are the following two problems.
【０００６】第１の問題点は、両者が接触した状態で焼
成を行うため、その工程中に成分の相互拡散が生じて、
それぞれの焼結性や電気特性が変化してしまい、その結
果、目的とした特性のコンデンサを得る事ができないと
いう点である。第２の問題点は、両者の焼結開始および
終了温度と、焼結にともなう収縮率が一致しないと、片
方だけが焼結収縮しようとする、あるいは片方だけの収
縮率が大きい事によって、焼結後の基板にそりやクラッ
クが生じたり、ひどい場合には層間剥離等で破壊してし
まう点である。[0006] The first problem is that the calcination is carried out in a state where both are in contact with each other.
The sinterability and electrical characteristics of each of them change, and as a result, a capacitor having the desired characteristics cannot be obtained. The second problem is that if the sintering start and end temperatures do not match the sintering shrinkage, only one will attempt to shrink, or only one will have a high shrinkage, resulting in sintering. This is because warping and cracks occur in the substrate after bonding, and in severe cases, the substrate is broken by delamination or the like.
【０００７】第２の問題点を克服するためには、基板用
絶縁体層（以下基板層と表記）とコンデンサ用誘電体層
（以下容量層と表記）の、焼結温度と収縮率をかなり厳
密に一致させる必要がある。一方、第１の問題点を克服
する方法として、基板層と容量層の間に、相互拡散を防
ぐための障壁となる層（以下中間層と表記）を介在させ
る方法が提案されており、障壁用材料として特定の組成
比のものを指定した特許が出願されている（特開平３−
４５９４号公報、特開平９−９２９７８号公報等）。し
かしながら、この方法を用いると、基板層と容量層と中
間層の３者の焼結温度を一致させないと、第２の問題点
が生じてしまう。例えば、特開平９−９２９７８号公報
では、アルミナ耐火物やマグネシア耐火物が障壁用材料
としての効果が大きい事が述べられているが、しかしな
がら、これらの耐火物は、基板材料として用いられてい
るガラスセラミックスの焼結温度である８７５℃では全
く焼結しないために、第２の問題点は克服できず、実用
的な方法とは言えなかった。また、焼結しないこれらの
耐火物は、機械強度の面からも、実用的とは言えなかっ
た。In order to overcome the second problem, the sintering temperature and shrinkage of the insulating layer for the substrate (hereinafter referred to as the substrate layer) and the dielectric layer for the capacitor (hereinafter referred to as the capacitance layer) are considerably increased. Must match exactly. On the other hand, as a method of overcoming the first problem, a method of interposing a layer (hereinafter referred to as an intermediate layer) serving as a barrier for preventing interdiffusion between a substrate layer and a capacitor layer has been proposed. A patent has been filed in which a material having a specific composition ratio is designated as a material for use (Japanese Unexamined Patent Publication No.
4594, JP-A-9-92978, etc.). However, if this method is used, the second problem occurs unless the sintering temperatures of the substrate layer, the capacitor layer, and the intermediate layer are matched. For example, Japanese Unexamined Patent Publication No. 9-92978 discloses that alumina refractories and magnesia refractories have a large effect as a barrier material. However, these refractories are used as a substrate material. At 875 ° C., which is the sintering temperature of glass ceramics, no sintering was performed at all, so the second problem could not be overcome, and it was not a practical method. In addition, these refractories that are not sintered were not practical from the viewpoint of mechanical strength.
【０００８】これらの問題点のため、大容量のコンデン
サを基板中に内蔵させる事は困難であり、その容量は５
０ｎＦ/ｃｍ2程度のものしか得られていなかった。[0008] Because of these problems, it is difficult to incorporate a large-capacity capacitor in a substrate, and the capacitance is 5
Only about 0 nF / cm2 was obtained.
【０００９】本発明は、従来のコンデンサ内蔵基板およ
びその製造方法が有する上述した課題を考慮し、コンデ
ンサを基板中に同時焼成で一括形成する事ができ、集積
度、実装密度を向上させるコンデンサ内蔵基板およびそ
の製造方法を提供することを目的とするものである。The present invention, in consideration of the above-mentioned problems of a conventional substrate with a built-in capacitor and a method of manufacturing the same, allows capacitors to be formed simultaneously in the substrate by simultaneous firing, thereby improving the degree of integration and mounting density. It is an object of the present invention to provide a substrate and a method for manufacturing the same.
【００１０】[0010]
【課題を解決するための手段】以上のような問題点を解
決するために、請求項１の本発明は、無機系絶縁材料か
らなる少なくとも一層の基板層と、前記基板層に積層さ
れた誘電体層と、前記誘電体層を挟み込むことによっ
て、前記誘電体層とともにコンデンサを形成する二層の
電極層と、前記基板層と前記誘電体層との間に、前記基
板層と前記誘電体層もしくは前記電極層とが直接接しな
いように配置され、前記基板層および前記誘電体層より
焼結温度が高く、かつ前記無機系絶縁材料と反応するセ
ラミック系素材からなる、少なくとも１層以上の中間層
とを備えることを特徴とするコンデンサ内蔵基板であ
る。In order to solve the above-mentioned problems, the present invention according to claim 1 is to provide at least one substrate layer made of an inorganic insulating material and a dielectric layer laminated on the substrate layer. A body layer, two electrode layers forming a capacitor together with the dielectric layer by sandwiching the dielectric layer, and the substrate layer and the dielectric layer between the substrate layer and the dielectric layer. Alternatively, the electrode layer is disposed so as not to be in direct contact with the substrate layer, and the sintering temperature is higher than that of the dielectric layer, and is made of a ceramic material that reacts with the inorganic insulating material. And a capacitor-containing substrate.
【００１１】請求項２の本発明は、前記中間層は、主成
分として、２価金属の酸化物を少なくとも１種類含むこ
とを特徴とする請求項１に記載のコンデンサ内蔵基板で
ある。According to a second aspect of the present invention, there is provided the substrate with a built-in capacitor according to the first aspect, wherein the intermediate layer contains at least one oxide of a divalent metal as a main component.
【００１２】請求項３の本発明は、前記中間層の厚さが
１０μｍ以下であることを特徴とする請求項２に記載の
コンデンサ内蔵基板である。According to a third aspect of the present invention, there is provided the substrate with a built-in capacitor according to the second aspect, wherein the thickness of the intermediate layer is 10 μm or less.
【００１３】請求項４の本発明は、前記中間層は、主成
分として、酸化マグネシウム、酸化カルシウム、酸化亜
鉛のうちの少なくとも一つを含むことを特徴とする請求
項２または３に記載のコンデンサ内蔵基板である。According to a fourth aspect of the present invention, the intermediate layer contains at least one of magnesium oxide, calcium oxide, and zinc oxide as a main component. It is a built-in substrate.
【００１４】請求項５の本発明は、前記中間層の主成分
は、酸化マグネシウムと酸化カルシウムのいずれか一つ
と、酸化亜鉛とであることを特徴とする請求項４に記載
のコンデンサ内蔵基板である。According to a fifth aspect of the present invention, in the substrate with a built-in capacitor according to the fourth aspect, the main components of the intermediate layer are one of magnesium oxide and calcium oxide and zinc oxide. is there.
【００１５】請求項６の本発明は、前記中間層は、副成
分として、酸化珪素、酸化アルミニウム、酸化硼素、酸
化鉛のうちの少なくとも一つを含むことを特徴とする請
求項１〜５のいずれかに記載のコンデンサ内蔵基板であ
る。According to a sixth aspect of the present invention, the intermediate layer contains at least one of silicon oxide, aluminum oxide, boron oxide and lead oxide as a sub-component. A substrate with a built-in capacitor according to any one of the above.
【００１６】請求項７の本発明は、前記中間層を第１中
間層とし、前記第１中間層と前記誘電体層との間に、前
記第１中間層と前記誘電体層もしくは前記電極層とが直
接接しないように配置され、前記誘電体層と実質的に同
一または類似の成分を主成分とする第２中間層を備える
ことを特徴とする請求項１〜６のいずれかに記載のコン
デンサ内蔵基板である。The present invention according to claim 7, wherein the intermediate layer is a first intermediate layer, and the first intermediate layer and the dielectric layer or the electrode layer are provided between the first intermediate layer and the dielectric layer. And a second intermediate layer mainly composed of substantially the same or similar component as the dielectric layer, wherein the second intermediate layer is disposed so as not to be in direct contact with the dielectric layer. This is a substrate with a built-in capacitor.
【００１７】請求項８の本発明は、前記第２中間層は、
前記誘電体層よりも低温で焼結するものであることを特
徴とする請求項７に記載のコンデンサ内蔵基板である。According to the present invention of claim 8, the second intermediate layer comprises:
The capacitor built-in substrate according to claim 7, wherein the substrate is sintered at a lower temperature than the dielectric layer.
【００１８】請求項９の本発明は、前記第２中間層は、
副成分として、酸化鉛または酸化ビスマスを含むことを
特徴とする請求項７に記載のコンデンサ内蔵基板であ
る。According to a ninth aspect of the present invention, the second intermediate layer comprises:
The capacitor built-in substrate according to claim 7, wherein the substrate contains lead oxide or bismuth oxide as an auxiliary component.
【００１９】請求項１０の本発明は、前記中間層全体の
厚さ、または、前記第１中間層と前記第２中間層の厚さ
の合計は、３０μｍ以下であることを特徴とする請求項
１〜９のいずれかに記載のコンデンサ内蔵基板である。According to a tenth aspect of the present invention, the total thickness of the intermediate layer or the total thickness of the first intermediate layer and the second intermediate layer is 30 μm or less. 10. A substrate with a built-in capacitor according to any one of 1 to 9.
【００２０】請求項１１の本発明は、請求項１〜１０の
いずれかに記載のコンデンサ内蔵基板を製造する製造方
法において、コンデンサ内蔵基板の焼成を行う前に、そ
のグリーン成形体の両面もしくは片面に、前記焼成が行
われる焼成温度においては、実質的に焼結収縮を生じな
い無機組成物を主成分とする最外層を積層し、前記焼成
の完了後、前記最外層の全部または一部を除去すること
を特徴とするコンデンサ内蔵基板の製造方法である。The present invention according to claim 11 is a method of manufacturing a substrate with a built-in capacitor according to any one of claims 1 to 10, wherein before firing the substrate with a built-in capacitor, the green molded body is double-sided or single-sided. At the firing temperature at which the firing is performed, an outermost layer mainly composed of an inorganic composition that does not substantially cause sintering shrinkage is laminated, and after completion of the firing, all or a part of the outermost layer is removed. A method for manufacturing a substrate with a built-in capacitor, characterized by removing the substrate.
【００２１】[0021]
【発明の実施の形態】以下に、本発明の実施の形態を図
面を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.
【００２２】（第１の実施の形態）まず、本発明の第１
の実施の形態を図面を参照して説明する。(First Embodiment) First, the first embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings.
【００２３】図１は、本発明の第１の実施の形態におけ
るコンデンサ内蔵基板を示す断面模式図である。図１に
示すように、本実施の形態におけるコンデンサ内蔵基板
は、無機系絶縁材料からなる基板層１ａ〜１ｄと、基板
層１ｂ、１ｃの間に配置された誘電体層である容量層２
と、それぞれ基板層１ｂ、１ｃと容量層２との間に配置
され、基板層１ａ〜１ｄおよび容量層２より焼結温度が
高く、かつ前記無機系絶縁材料と反応するセラミック系
素材からなる中間層３ａ、３ｂと、容量層２を挟み込む
ことによって、容量層２とともにコンデンサを形成して
いる電極層４ａ、４ｂと、層間または層上に配置された
配線層５ａ〜５ｄと、基板層１ａ〜１ｄまたは中間層３
ａ、３ｂを貫通して電極層または配線層同士を電気的に
接続するビア６ａ〜６ｆとを備えている。また、中間層
３ａ、３ｂは、基板層１ｂ、１ｃと容量層２もしくは電
極層４ａ、４ｂとが直接接しないように配置されてい
る。なお、最外層７ａ、７ｂは、後述する製造工程にお
いて、コンデンサ内蔵基板の焼成が行われる際の、焼成
温度においては、実質的に焼結収縮を生じない無機組成
物を主成分とするものであり、コンデンサ内蔵基板の焼
成前に、コンデンサ内蔵基板のグリーン成形体の両面も
しくは片面に積層され、前記焼成の完了後、全部または
一部を除去されるものである。FIG. 1 is a schematic sectional view showing a substrate with a built-in capacitor according to the first embodiment of the present invention. As shown in FIG. 1, a substrate with a built-in capacitor according to the present embodiment includes substrate layers 1a to 1d made of an inorganic insulating material and a capacitor layer 2 which is a dielectric layer disposed between substrate layers 1b and 1c.
And an intermediate material made of a ceramic material which is disposed between the substrate layers 1b and 1c and the capacitance layer 2 and has a higher sintering temperature than the substrate layers 1a to 1d and the capacitance layer 2 and reacts with the inorganic insulating material. By sandwiching the layers 3a and 3b and the capacitor layer 2, the electrode layers 4a and 4b forming a capacitor together with the capacitor layer 2, the wiring layers 5a to 5d disposed between or on the layers, and the substrate layers 1a to 1d or middle layer 3
a, and vias 6a to 6f that penetrate through the electrodes 3b and electrically connect the electrode layers or the wiring layers to each other. The intermediate layers 3a and 3b are arranged such that the substrate layers 1b and 1c do not directly contact the capacitor layer 2 or the electrode layers 4a and 4b. The outermost layers 7a and 7b are mainly composed of an inorganic composition that does not substantially cause sintering shrinkage at the firing temperature when the substrate with a built-in capacitor is fired in a manufacturing process described later. In addition, before firing of the substrate with a built-in capacitor, the green molded body of the substrate with a built-in capacitor is laminated on both surfaces or one surface, and after the completion of the firing, all or a part is removed.
【００２４】次に、本実施の形態におけるコンデンサ内
蔵基板の製造方法を図１を参照して説明する。Next, a method of manufacturing a substrate with a built-in capacitor according to the present embodiment will be described with reference to FIG.
【００２５】まず、コンデンサ内蔵無機系多層基板の作
製の材料として、以下のものを準備する。First, the following materials are prepared as materials for manufacturing an inorganic multilayer substrate with a built-in capacitor.
【００２６】 １．基板層グリーンシート ２．中間層グリーンシートまたはペースト ３．容量層グリーンシートまたはペースト ４．ビア用導体ペースト ５．配線およびコンデンサ電極用導体ペースト 各グリーンシートは、それぞれに用いる無機粉末と有機
バインダとを十分に混合・混練してスラリーを作製し、
ベースフィルム上にこのスラリーを引きのばしてシート
状に形成した後、これを乾燥して作製する。各ペースト
は、それぞれに用いる無機粉末と、有機バインダと溶剤
とからなる有機ビヒクル成分とを十分に混合・混練して
作製する。1. Substrate layer green sheet 2. 2. Intermediate layer green sheet or paste 3. Capacitance layer green sheet or paste 4. Conductor paste for via Conductor paste for wiring and capacitor electrodes Each green sheet is made by sufficiently mixing and kneading the inorganic powder and organic binder used for each, to produce a slurry,
The slurry is drawn on a base film to form a sheet, and then dried to produce a sheet. Each paste is prepared by sufficiently mixing and kneading the inorganic powder used for each and an organic vehicle component composed of an organic binder and a solvent.
【００２７】最初に、基板層グリーンシートの内、容量
層２の最も近くに配置される基板層１ｂ、１ｃとなるも
のに対して、その全面あるいは容量層２が位置する予定
となる部位に、中間層３ａ、３ｂを、グリーンシート積
層法、または印刷法により形成する。次に、各基板層１
ａ〜１ｄおよび中間層３ａ、３ｂにビア孔加工を施し、
ビア用導体ペーストを、グリーンシートのビア孔に充填
することによって、ビア６ａ〜６ｆを形成する。次に内
層配線用導体ペーストを用いて、グリーンシート上に配
線パターンとして配線層５ａ〜５ｄを、また、コンデン
サ用電極として電極層４ａ、４ｂを印刷により形成す
る。電極層４ａ、４ｂのいずれかの上にグリーンシート
または印刷法により、容量層２を形成する。以下、必要
に応じて、容量層２が電極層４ａ、４ｂで挟まれ、かつ
電極層４ａ、４ｂと基板層１ｂ、１ｃの間に中間層３
ａ、３ｂがくるように、各ペーストを印刷するか、グリ
ーンシートを積層することによって、図１から最外層７
ａ、７ｂを除いたコンデンサ内蔵基板となるグリーン積
層体が形成される。このグリーン積層体の両面あるいは
片面に、最外層７ａ、７ｂとなる、絶縁シートの焼成時
に焼結しない無機組成物を含んだグリーンシート、ある
いは既に焼結した層、金属箔等を積層し、熱圧着して、
図１に示す本実施の形態におけるコンデンサ内蔵基板と
なるグリーン積層体を得る。以上の作製順序は、必要に
応じて変更、一部省略してもかまわない。得られた積層
体を加熱炉内で脱バインダ処理し、その後必要に応じて
配線層、電極層のメタライズ処理を施した後、焼成処理
を施すことによって、本実施の形態におけるコンデンサ
内蔵基板を得る。なお、最外層７ａ、７ｂを積層した場
合は、必要に応じて最外層７ａ、７ｂの一部または全部
を取り除く。First, of the green sheets of the substrate layer, the substrate layers 1b and 1c disposed closest to the capacitance layer 2 are placed on the entire surface or at a portion where the capacitance layer 2 is to be located. The intermediate layers 3a and 3b are formed by a green sheet laminating method or a printing method. Next, each substrate layer 1
a-1d and the intermediate layers 3a, 3b are subjected to via hole processing,
The via holes 6a to 6f are formed by filling the via holes of the green sheet with the via conductor paste. Next, wiring layers 5a to 5d as wiring patterns and electrode layers 4a and 4b as capacitor electrodes are formed on the green sheet by printing using a conductor paste for inner layer wiring. The capacitor layer 2 is formed on one of the electrode layers 4a and 4b by a green sheet or a printing method. Hereinafter, if necessary, the capacitance layer 2 is sandwiched between the electrode layers 4a and 4b, and the intermediate layer 3 is interposed between the electrode layers 4a and 4b and the substrate layers 1b and 1c.
By printing each paste or laminating green sheets so that a and 3b come, the outermost layer 7 shown in FIG.
A green laminated body to be a substrate with a built-in capacitor excluding a and 7b is formed. A green sheet containing an inorganic composition that does not sinter when the insulating sheet is fired, or a layer that has already been sintered, a metal foil, or the like, which is to be the outermost layers 7a and 7b, is laminated on both surfaces or one surface of the green laminate. Crimp,
A green laminate as a substrate with a built-in capacitor according to the present embodiment shown in FIG. 1 is obtained. The above manufacturing order may be changed or partly omitted as necessary. The obtained laminate is subjected to a binder removal process in a heating furnace, and then, if necessary, a metallization process for the wiring layer and the electrode layer is performed, and then a firing process is performed to obtain the capacitor built-in substrate in the present embodiment. . When the outermost layers 7a and 7b are stacked, part or all of the outermost layers 7a and 7b are removed as necessary.
【００２８】本実施の形態においては、容量層２と基板
層１ｂ、１ｃとの間に、両者より焼結温度が高く、かつ
基板層１ｂ、１ｃと反応する中間層３ａ、３ｂを設けて
いる。この中間層３ａ、３ｂは、それ自体は焼結温度が
高いため、容量層２への拡散はあまり生じず、一方基板
層１ｂ、１ｃとは反応するために、基板層１ｂ、１ｃか
ら容量層２への拡散が妨げられ、その結果、容量層２の
焼結が阻害されず、大容量のコンデンサを作製する事が
可能となる。通常のセラミック基板中に、この中間層３
ａ、３ｂのような焼結しにくいものを部分的に入れる事
は、その部分のみ焼結収縮しにくいため、焼結体全体に
反りや歪み、クラックを生じたり、その部分の機械強度
が低下して層間剥離、破壊等を生じやすくなる。本実施
の形態においては、この対策として、第一に、中間層３
ａ、３ｂに、酸化珪素、酸化アルミニウム、酸化硼素、
酸化鉛等の副成分を添加して、中間層の機械強度、接着
強度を上げること、第二に、焼成前の積層体の上下面
に、焼成時に収縮を全くあるいはほとんど生じない最外
層７ａ、７ｂを積層して焼結させること、を採用するこ
とにより、焼成収縮が主として面に垂直な方向に生じ、
焼結温度の異なる層を入れてもクラック等が生じないよ
うにしている。In this embodiment, intermediate layers 3a and 3b having a higher sintering temperature and reacting with the substrate layers 1b and 1c are provided between the capacitance layer 2 and the substrate layers 1b and 1c. . Since the intermediate layers 3a and 3b themselves have a high sintering temperature, they hardly diffuse into the capacitor layer 2, while the intermediate layers 3a and 3b react with the substrate layers 1b and 1c. 2 is prevented, and as a result, sintering of the capacitance layer 2 is not hindered, and a large-capacity capacitor can be manufactured. This intermediate layer 3 is formed in a normal ceramic substrate.
If a material that is difficult to sinter such as a and 3b is partially inserted, only that portion hardly shrinks and sinters, so that the entire sintered body may be warped, distorted or cracked, or the mechanical strength of the portion may be reduced. As a result, delamination, destruction, and the like are likely to occur. In the present embodiment, as a measure against this, first, the intermediate layer 3
a, 3b, silicon oxide, aluminum oxide, boron oxide,
The addition of sub-components such as lead oxide to increase the mechanical strength and adhesive strength of the intermediate layer. Second, the outermost layer 7a, which does not cause any or almost no shrinkage during firing on the upper and lower surfaces of the laminate before firing, By laminating and sintering 7b, firing shrinkage mainly occurs in a direction perpendicular to the plane,
Cracks and the like are prevented from occurring even when layers having different sintering temperatures are inserted.
【００２９】基板層１ａ〜１ｄとなる無機絶縁材料は特
に限定されず、放熱性や強度、焼結温度、コストなどに
応じて適宜決定すれば良いが、一般に広く用いられてい
るアルミナや、ガラスセラミックスを用いる事ができ
る。特にガラスセラミックスは、焼成温度が９００℃程
度と低く、低抵抗だが低融点の銅、銀を配線材料に用い
る事が出来るので望ましい。ガラスセラミックに用いら
れるセラミック成分としては、アルミナ、シリカ、ムラ
イト、フォルステライト等が挙げられ、ガラスとして
は、結晶化ガラス系の、例えばほう珪酸ガラス、ほう珪
酸鉛系やほう珪酸カルシウム系などのほう珪酸塩系ガラ
スなど、非晶質ガラス系の、例えば珪酸塩ガラスやアル
ミノ珪酸塩ガラスなどが使用できる。The inorganic insulating material used as the substrate layers 1a to 1d is not particularly limited, and may be appropriately determined according to heat dissipation, strength, sintering temperature, cost, and the like. Ceramics can be used. In particular, glass ceramics are desirable because the firing temperature is as low as about 900 ° C. and low resistance but low melting point copper and silver can be used for the wiring material. Examples of the ceramic component used for the glass ceramic include alumina, silica, mullite, and forsterite, and the glass is preferably a crystallized glass-based glass such as borosilicate glass, lead borosilicate-based, or calcium borosilicate-based. Amorphous glass materials such as silicate glass, for example, silicate glass and aluminosilicate glass, can be used.
【００３０】容量層２となる無機絶縁材料は特に限定さ
れず、基板層１ａ〜１ｄの焼成温度や必要とされる誘電
率、誘電正接、温度特性などに応じて適宜決定すれば良
いが、基板層１ｂ、１ｃに低温焼結性のガラスセラミッ
クスを用いた場合は、やはり低温で焼結し、かつ誘電率
の大きい、Pb(Mg1/3Nb2/3)xTiy(Ni1/2W1/2)1-x-yO3等の
Ｐｂ系のペロブスカイト材料が有用である。より高い温
度で焼成する事が可能な場合は、チタン酸バリウム等が
使用できる。The inorganic insulating material used as the capacitor layer 2 is not particularly limited, and may be appropriately determined according to the firing temperature of the substrate layers 1a to 1d and required dielectric constant, dielectric loss tangent, temperature characteristics, and the like. When low-temperature sinterable glass ceramics are used for the layers 1b and 1c, Pb (Mg1/3 Nb2/3 )x Tiy (Ni1/2 Pb-based perovskite materials such as W1/2 )1-xy O3 are useful. If firing at a higher temperature is possible, barium titanate or the like can be used.
【００３１】各層のグリーンシートの作製方法は特に限
定はなく、例えばドクターブレード法やカレンダ法、ロ
ールコーター法などが使用できる。またシートを保持す
るベースフィルムとしては、例えばポリエチレン系樹脂
やポリエステル系樹脂、紙などが使用できる。さらに、
基板層シートにビア孔加工を施す方法としては、例えば
パンチングやドリル加工、レーザー加工などが使用でき
る。The method for producing the green sheet of each layer is not particularly limited, and for example, a doctor blade method, a calendar method, a roll coater method and the like can be used. As the base film for holding the sheet, for example, polyethylene resin, polyester resin, paper, or the like can be used. further,
As a method of performing via hole processing on the substrate layer sheet, for example, punching, drilling, laser processing, or the like can be used.
【００３２】導体材料中の金属成分は特に限定されず、
基板の作製方法や使用状態に応じて適宜選択すればよい
が、銅、銀、金、パラジウム、白金、ニッケルもしくは
それらの合金であることが好ましく、特に銅もしくは銀
が、低抵抗でありより好ましい。銅はコストや耐マイグ
レーション性に優れた導体材料であるが、焼成時に酸化
されやすい。このため導体ペースト中の金属前駆体とし
て酸化銅を主体に用い、焼成時にメタライズ処理して導
電性の良好な金属銅とすることも可能である。The metal component in the conductor material is not particularly limited.
It may be appropriately selected depending on the method of manufacturing the substrate and the state of use, but is preferably copper, silver, gold, palladium, platinum, nickel or an alloy thereof, and particularly copper or silver is more preferable because of its low resistance. . Copper is a conductor material excellent in cost and migration resistance, but is easily oxidized during firing. For this reason, copper oxide can be mainly used as a metal precursor in the conductor paste, and metalized at the time of firing to obtain metal copper having good conductivity.
【００３３】ペーストを作製する際に使用する有機ビヒ
クル成分としては特に限定は無く、有機バインダとして
は、例えばエチルセルロース系樹脂、ポリビニルブチラ
ール樹脂、ポリアクリル系樹脂などが使用でき、溶剤と
してはテルピネオールなどのアルコール類やケトン類な
どが使用できる。また適宜可塑剤や界面活性剤を添加し
てもよい。また、ペーストの混練方法としては特に限定
はなく、例えば３本ロールミルやボールミルなどが使用
できる。The organic vehicle component used in preparing the paste is not particularly limited. As the organic binder, for example, ethyl cellulose resin, polyvinyl butyral resin, polyacrylic resin can be used, and as the solvent, terpineol or the like can be used. Alcohols and ketones can be used. Further, a plasticizer or a surfactant may be appropriately added. The method for kneading the paste is not particularly limited, and for example, a three-roll mill or a ball mill can be used.
【００３４】積層体の熱処理の雰囲気は特に限定は無
く、脱バインダ、メタライズ、焼成などの目的に応じ適
宜選択でき、例えば大気、窒素、水素、水蒸気、二酸化
炭素あるいはそれらの混合ガスなどが使用できる。The atmosphere for the heat treatment of the laminate is not particularly limited and can be appropriately selected according to the purpose of binder removal, metallization, firing, etc., for example, air, nitrogen, hydrogen, steam, carbon dioxide, or a mixed gas thereof can be used. .
【００３５】なお、本発明の基板層は、本実施の形態に
おいては、本発明のコンデンサを挟むように、上下各二
層あるとして説明したが、これに限るものではなく、例
えば、本発明のコンデンサの下部に一層のみが備えられ
ているとしてもよい。要するに、無機系絶縁材料からな
る少なくとも一層の基板層と、前記基板層に積層された
誘電体層と、前記誘電体層を挟み込むことによって、前
記誘電体層とともにコンデンサを形成する二層の電極層
と、前記基板層と前記誘電体層との間に、前記基板層と
前記誘電体層もしくは前記電極層とが直接接しないよう
に配置され、前記基板層および前記誘電体層より焼結温
度が高く、かつ前記無機系絶縁材料と反応するセラミッ
ク系素材からなる、少なくとも１層以上の中間層とを備
える構成であればよい。In the present embodiment, the substrate layer of the present invention has been described as having two upper and lower layers so as to sandwich the capacitor of the present invention. However, the present invention is not limited to this. Only one layer may be provided below the capacitor. In short, at least one substrate layer made of an inorganic insulating material, a dielectric layer laminated on the substrate layer, and two electrode layers forming a capacitor together with the dielectric layer by sandwiching the dielectric layer And, between the substrate layer and the dielectric layer, disposed so that the substrate layer and the dielectric layer or the electrode layer do not directly contact, the sintering temperature than the substrate layer and the dielectric layer Any structure may be used as long as it is high and includes at least one or more intermediate layers made of a ceramic material that reacts with the inorganic insulating material.
【００３６】また、本発明の誘電体層および中間層は、
本実施の形態においては、図１に示すように、各基板層
の全面に配置されているとして説明したが、これに限る
ものではなく、例えば、図２に示すように、中間層３
が、基板層間１ｂ、１ｃ間に部分的に配置された容量層
（誘電体層）２の周囲を囲い込むように、配置されてい
るとしてもよい。要するに、本発明の中間層が、本発明
の基板層と本発明の誘電体層との間に、前記基板層と前
記誘電体層もしくは本発明の電極層とが直接接しないよ
うに配置されておればよい。Further, the dielectric layer and the intermediate layer according to the present invention include:
In the present embodiment, as described in FIG. 1, it has been described that they are arranged on the entire surface of each substrate layer. However, the present invention is not limited to this. For example, as shown in FIG.
May be disposed so as to surround the capacitance layer (dielectric layer) 2 partially disposed between the substrate layers 1b and 1c. In short, the intermediate layer of the present invention is disposed between the substrate layer of the present invention and the dielectric layer of the present invention so that the substrate layer does not directly contact the dielectric layer or the electrode layer of the present invention. I just need to.
【００３７】（第２の実施の形態）次に、本発明の第２
の実施の形態を図面を参照して説明する。本実施の形態
が上述した第１の実施の形態と異なるのは、第１の実施
の形態におけるコンデンサ内蔵基板が本発明の中間層を
備えていることに対し、本実施の形態におけるコンデン
サ内蔵基板が本発明の第１中間層および第２中間層を備
えていることである。したがって、本実施の形態におい
て、第１の実施の形態と同様の物については、同一符号
を付与し、説明を省略する。また、特に説明のないもの
については、第１の実施の形態と同じとする。(Second Embodiment) Next, a second embodiment of the present invention will be described.
An embodiment will be described with reference to the drawings. This embodiment is different from the first embodiment described above in that the substrate with a built-in capacitor according to the first embodiment includes an intermediate layer according to the present invention, whereas the substrate with a built-in capacitor according to the present embodiment is different from the first embodiment. Is provided with the first intermediate layer and the second intermediate layer of the present invention. Therefore, in the present embodiment, the same reference numerals are given to the same components as those in the first embodiment, and the description will be omitted. Unless otherwise described, it is the same as the first embodiment.
【００３８】図３は、本発明の第２の実施の形態におけ
るコンデンサ内蔵基板を示す断面模式図である。図３に
示すように、本実施の形態におけるコンデンサ内蔵基板
は、無機系絶縁材料からなる基板層１ａ〜１ｄと、基板
層１ｂ、１ｃの間に配置された誘電体層である容量層２
と、それぞれ基板層１ｂ、１ｃと容量層２との間に配置
され、基板層１ａ〜１ｄおよび容量層２より焼結温度が
高く、かつ前記無機系絶縁材料と反応するセラミック系
素材からなる第１中間層８ａ、８ｂと、それぞれ第１中
間層８ａ、８ｂと容量層２との間に配置され、容量層２
と実質的に同一または類似の成分を主成分とする第２中
間層９ａ、９ｂと、容量層２を挟み込むことによって、
容量層２とともにコンデンサを形成している電極層４
ａ、４ｂと、層間または層上に配置された配線層５ａ〜
５ｄと、基板層１ａ〜１ｄまたは中間層３ａ、３ｂを貫
通して電極層または配線層同士を電気的に接続するビア
６ａ〜６ｈとを備えている。また、第１中間層８ａ、８
ｂは、基板層１ｂ、１ｃと容量層２もしくは電極層４
ａ、４ｂとが直接接しないように配置されており、第２
中間層９ａ、９ｂは、第１中間層８ａ、８ｂと容量層２
もしくは電極層４ａ、４ｂとが直接接しないように配置
されている。その他の構成は、第１の実施の形態と同様
である。FIG. 3 is a schematic sectional view showing a substrate with a built-in capacitor according to a second embodiment of the present invention. As shown in FIG. 3, the substrate with a built-in capacitor according to the present embodiment includes substrate layers 1a to 1d made of an inorganic insulating material and a capacitor layer 2 which is a dielectric layer arranged between substrate layers 1b and 1c.
And a ceramic material which is disposed between the substrate layers 1b and 1c and the capacitor layer 2 and has a higher sintering temperature than the substrate layers 1a to 1d and the capacitor layer 2 and which reacts with the inorganic insulating material. The first intermediate layers 8a and 8b are respectively disposed between the first intermediate layers 8a and 8b and the capacitance layer 2;
By sandwiching the second intermediate layers 9a and 9b mainly containing substantially the same or similar components as the main component and the capacitor layer 2,
Electrode layer 4 forming a capacitor together with capacitance layer 2
a, 4b and wiring layers 5a to 5c arranged between or on layers.
5d and vias 6a to 6h penetrating through the substrate layers 1a to 1d or the intermediate layers 3a and 3b to electrically connect the electrode layers or the wiring layers. Also, the first intermediate layers 8a, 8
b denotes the substrate layers 1b and 1c and the capacitor layer 2 or the electrode layer 4
a, 4b are arranged so as not to be in direct contact with each other.
The intermediate layers 9a and 9b are composed of the first intermediate layers 8a and 8b and the capacitor layer 2 respectively.
Alternatively, they are arranged such that they do not directly contact the electrode layers 4a and 4b. Other configurations are the same as those of the first embodiment.
【００３９】次に、本実施の形態におけるコンデンサ内
蔵基板の製造方法を説明する。本実施の形態におけるコ
ンデンサ内蔵基板の製造方法は、上述した第１の実施の
形態におけるコンデンサ内蔵基板の製造方法の説明にお
いて、中間層３ａ、３ｂを第１中間層８ａ、８ｂに置き
換えるのに加えて、電極層４ａ、４ｂと第１中間層８
ａ、８ｂの間に第２中間層９ａ、９ｂがくるように、各
ペーストを印刷するか、グリーンシートを積層するもの
である。Next, a method of manufacturing a substrate with a built-in capacitor according to the present embodiment will be described. The method for manufacturing a substrate with a built-in capacitor according to the present embodiment is different from the method for manufacturing a substrate with a built-in capacitor according to the first embodiment described above in that the intermediate layers 3a and 3b are replaced with the first intermediate layers 8a and 8b. The electrode layers 4a and 4b and the first intermediate layer 8
The respective pastes are printed or green sheets are laminated so that the second intermediate layers 9a and 9b come between a and 8b.
【００４０】本実施の形態における各部材の材質につい
ては、第１中間層の材質が第１の実施の形態における中
間層の材質と同じであること、および、第２中間層の材
質が第１の実施の形態における容量層の材質と実質的に
同一または類似の成分を主成分とするものであること以
外は、第１の実施の形態と同じである。As for the material of each member in the present embodiment, the material of the first intermediate layer is the same as the material of the intermediate layer in the first embodiment, and the material of the second intermediate layer is the first. This embodiment is the same as the first embodiment except that the main component is substantially the same or similar to the material of the capacitance layer in the second embodiment.
【００４１】本実施の形態においては、第２中間層を備
えることにより、第１の実施の形態の効果に加え、基板
層および第１中間層の容量層への拡散の影響を、ほとん
ど０に出来るという効果がある。In this embodiment, by providing the second intermediate layer, in addition to the effects of the first embodiment, the influence of the diffusion of the substrate layer and the first intermediate layer into the capacitor layer is reduced to almost zero. There is an effect that can be done.
【００４２】なお、本発明の誘電体層、第１中間層およ
び第２中間層は、本実施の形態においては、図３に示す
ように、各基板層の全面に配置されているとして説明し
たが、これに限るものではなく、例えば、図２の中間層
３のように、第１中間層および／または第２中間層が、
基板層間に部分的に配置された容量層（誘電体層）の周
囲を囲い込むように、配置されているとしてもよい。要
するに、本発明の第１中間層が、本発明の基板層と本発
明の誘電体層との間に、前記基板層と前記誘電体層もし
くは本発明の電極層とが直接接しないように配置されて
おり、本発明の第２中間層が、本発明の第１中間層と前
記誘電体層との間に、前記第１中間層と前記誘電体層も
しくは前記電極層とが直接接しないように配置されてお
ればよい。In the present embodiment, the dielectric layer, the first intermediate layer, and the second intermediate layer of the present invention have been described as being disposed on the entire surface of each substrate layer as shown in FIG. However, the present invention is not limited to this. For example, as in the case of the intermediate layer 3 in FIG.
It may be arranged so as to surround a capacitor layer (dielectric layer) partially arranged between the substrate layers. In short, the first intermediate layer of the present invention is disposed between the substrate layer of the present invention and the dielectric layer of the present invention such that the substrate layer does not directly contact the dielectric layer or the electrode layer of the present invention. The second intermediate layer of the present invention is arranged so that the first intermediate layer and the dielectric layer or the electrode layer do not directly contact between the first intermediate layer of the present invention and the dielectric layer. It is sufficient if they are arranged.
【００４３】[0043]
【実施例】以下に、本発明の実施例を説明する。Embodiments of the present invention will be described below.
【００４４】以下に説明する実施例１〜５は、上述した
第１または第２の実施の形態におけるコンデンサ内蔵基
板の具体的実施例について、各中間層の組成・厚さ等、
または、最外層の有無・組成等を変化させた試料を作製
して、これらのコンデンサ内蔵基板としての性能を比較
したものである。各実施例の試料のうち、第１中間層の
みを備えるものは、第１の実施の形態に対応するもので
あり、この場合、第１中間層は中間層３ａ、３ｂに対応
するものである。また、第１中間層および第２中間層を
備えるものについては、第２の実施の形態に対応するも
のである。Examples 1 to 5 described below relate to specific examples of the substrate with a built-in capacitor in the above-described first or second embodiment, and the composition and thickness of each intermediate layer.
Alternatively, samples in which the presence / absence, composition, and the like of the outermost layer were changed were prepared, and their performances as substrates with built-in capacitors were compared. Among the samples of the examples, those having only the first intermediate layer correspond to the first embodiment. In this case, the first intermediate layer corresponds to the intermediate layers 3a and 3b. . Further, the one provided with the first intermediate layer and the second intermediate layer corresponds to the second embodiment.
【００４５】なお、本発明の効果を確認するために、上
記試料と合わせて、本発明の対象外である試料も作製し
て、上記試料とともに比較をしている。本発明の対象外
であるか否かの区別は、各実施例の結果を示す比較表中
の「実比」欄で、本発明の実施例に対応するものについ
ては「実」と記し、本発明の対象外であり、比較例とし
て掲げたものについては「比」と記することによって、
行っている。In order to confirm the effects of the present invention, a sample which is not the object of the present invention was prepared in addition to the above-mentioned sample, and compared with the above-mentioned sample. The distinction as to whether or not it is outside the scope of the present invention is made in the "actual ratio" column in the comparison table showing the results of the examples, and the one corresponding to the example of the present invention is described as "actual". Those that are out of the scope of the invention and listed as comparative examples are described as "ratio",
Is going.
【００４６】また、実施例１〜４においては、導体材料
中の金属成分として、最も低抵抗な銅または銀を用いる
場合を中心として本発明の具体的実施例を示す。銅また
は銀は融点が低いため、無機絶縁材料としては、低温で
焼結できるものである必要性があり、このため、実施例
１〜４については、無機絶縁材料として、ガラス−アル
ミナ混合系のガラスセラミックスを選んだが、実施例５
に示すように、本発明はこれに限定されるものではな
い。Further, in Examples 1 to 4, specific examples of the present invention will be described focusing on the case where copper or silver having the lowest resistance is used as the metal component in the conductor material. Since copper or silver has a low melting point, it is necessary that the inorganic insulating material can be sintered at a low temperature. Therefore, in Examples 1 to 4, a glass-alumina mixed system was used as the inorganic insulating material. Example 5 where glass ceramics was selected
As shown in the above, the present invention is not limited to this.
【００４７】（実施例１）まず銀粉末、融着用ガラス粉
末にエチルセルロース系樹脂とテルピネオールを３本ロ
ールで十分に混合、混練し、配線用およびコンデンサ電
極用導体ペーストを作製した。また、ガラス成分を若干
増量して、同様にビア用導体ペーストを作製した。Example 1 First, ethyl cellulose resin and terpineol were sufficiently mixed and kneaded with a silver powder and a glass powder for fusion with a three-roll mill to prepare a conductor paste for wiring and capacitor electrodes. In addition, a conductor component for via was prepared in a similar manner by slightly increasing the glass component.
【００４８】次に、ガラス−アルミナ混合の基板層用粉
末（焼結温度９００℃）と、バインダとしてブチラール
系樹脂、可塑剤としてベンジルブチルフタレート、溶剤
としてブチルカルビトールをボールミルで十分に混合、
混練した後、脱泡し、得られたスラリーを、表面に離型
処理を施したベースフィルム（ポリフェニルサルファイ
ド）上にドクターブレード法で成形し、厚み約２００μ
ｍの基板層グリーンシートを作製した。また、ガラスセ
ラミック粉末の代わりにＰｂ系ペロブスカイト誘電体粉
末（組成比Pb1.0Ca0.03(Mg1/3Nb2/3)0.8Ti0.14(Ni1/2W
1/2)0.06O3.03、焼結温度８００℃）を用いて、上記と
同様にしてスラリーを作製し、これよりベースフィルム
（ポリフェニルサルファイド）上にドクターブレード法
で、容量層グリーンシートを作製した。同様に、無機粉
末を用いて、第１および第２中間層グリーンシートを作
製した。表１に各中間層のグリーンシートの組成および
焼結後の厚さを示す。組成欄中の例えば「MgO+1%B2O3」
は、MgO を１００に対してB2O3を１の割合で含む組成を
表す（他の表も同様）。また、アルミナ粉末を用いて、
ベースフィルム（ＰＥＴ）上に、本発明の最上層とな
る、厚み約２００μｍのアルミナシートを作製した。Next, a glass-alumina mixed substrate layer powder (sintering temperature 900 ° C.), butyral resin as a binder, benzyl butyl phthalate as a plasticizer, and butyl carbitol as a solvent were sufficiently mixed by a ball mill.
After kneading, the mixture was defoamed, and the obtained slurry was formed on a base film (polyphenyl sulfide) having a surface subjected to a release treatment by a doctor blade method, and the thickness was about 200 μm.
m of a substrate layer green sheet was prepared. Further, instead of the glass ceramic powder, a Pb-based perovskite dielectric powder (composition ratio Pb1.0 Ca0.03 (Mg1/3 Nb2/3 )0.8 Ti0.14 (Ni1/2 W
1/2 )0.06 O3.03 , sintering temperature 800 ° C) to prepare a slurry in the same manner as described above, and from this, a capacity layer green sheet is prepared on a base film (polyphenyl sulfide) by a doctor blade method. did. Similarly, first and second intermediate layer green sheets were prepared using inorganic powder. Table 1 shows the composition of the green sheet of each intermediate layer and the thickness after sintering. In the composition column, for example, “MgO + 1% B2 O3 ”
Represents a composition comprising MgO with respect to 100 B2 O3 at a ratio of 1 (as well as other tables). Also, using alumina powder,
On a base film (PET), an alumina sheet having a thickness of about 200 μm, which is the uppermost layer of the present invention, was produced.
【００４９】基板層グリーンシートの内、コンデンサ層
を挟むものについては、ベースフィルムを剥がした第１
中間層のみ、もしくは、第１および第２中間層のグリー
ンシートを積層した。次に所定箇所にφ０．２ｍｍのビ
ア孔をパンチングにより穿孔し、このビア孔に導体ペー
ストを充填した後、その表面に、必要に応じて配線用ま
たはコンデンサ電極用導体ペーストを用いて、印刷法に
よりパターンを形成した。コンデンサ用電極パターンを
形成した積層体上には、容量層グリーンシートを、ベー
スフィルムを剥がして積層し、さらに印刷法により、コ
ンデンサ用電極と配線パターンを形成した。こうして作
製した複数の積層体を、容量層がコンデンサ用電極層で
挟まれ、かつコンデンサ電極と基板層の間に中間層がく
るように、ベースフィルムを剥がしてお互いに積層し、
さらに全体の両側をベースフィルムを剥がしたアルミナ
グリーンシートで挟み、８０℃で熱圧着して最終的な積
層体を得た。Of the green sheets of the substrate layer sandwiching the capacitor layer, the first sheet from which the base film was peeled was used.
Green sheets of the intermediate layer alone or the first and second intermediate layers were laminated. Next, a via hole having a diameter of 0.2 mm is punched at a predetermined position by punching, and the via hole is filled with a conductive paste. To form a pattern. On the laminate on which the capacitor electrode pattern was formed, a capacitor layer green sheet was laminated by peeling the base film, and a capacitor electrode and a wiring pattern were formed by a printing method. A plurality of the laminates thus produced are laminated with each other by peeling the base film so that the capacitor layer is sandwiched between the capacitor electrode layers and the intermediate layer is between the capacitor electrode and the substrate layer.
Furthermore, both sides of the whole were sandwiched between alumina green sheets from which the base film was peeled off, and were thermocompressed at 80 ° C. to obtain a final laminate.
【００５０】得られた積層体を加熱炉内の大気中６００
℃で脱バインダ処理した後、さらに９００℃にて焼成し
た。その後焼結体の両側のアルミナを水洗浄により除去
し、内部に１０個のコンデンサ（容量層は、図１、図３
に示す如く一層であるが、それを挟む電極層を１０対し
たもの）を内蔵した無機多層基板を得た。こうして得ら
れた内蔵コンデンサの容量とその誘電正接ｔａｎδをＬ
ＣＲメーターにて、周波数１ｋＨｚで測定した。また基
板を切断してその断面観察より、各層の厚さを測定し
た。容量層の厚さは１０μｍであった。これより、容量
層の誘電率を算出した。１０個のコンデンサの平均値の
結果を表１に示す。なお、上述したように、表１に示す
厚さは、積層時のものではなく、焼結後の値である。The obtained laminate was placed in an atmosphere in a heating furnace at 600
After the binder was removed at a temperature of 900C, it was further fired at 900C. After that, alumina on both sides of the sintered body was removed by washing with water, and 10 capacitors (capacitance layers were shown in FIG. 1 and FIG.
As shown in FIG. 1, an inorganic multilayer substrate having a single layer (10 pairs of electrode layers sandwiching the single layer) was obtained. The capacitance of the built-in capacitor thus obtained and its dielectric loss tangent tanδ are represented by L
It was measured at a frequency of 1 kHz with a CR meter. The thickness of each layer was measured by cutting the substrate and observing the cross section. The thickness of the capacitance layer was 10 μm. From this, the dielectric constant of the capacitance layer was calculated. Table 1 shows the results of the average values of the ten capacitors. Note that, as described above, the thicknesses shown in Table 1 are not the values at the time of lamination, but are the values after sintering.
【００５１】なお、表１には、比較例として、本発明の
中間層を有しないもの（試料Ｎｏ．１）、中間層を有す
るがその材質が本発明の範囲とは異なるもの（試料Ｎ
ｏ．２〜４）を上記と同様にして作製した結果を示す。Table 1 shows, as comparative examples, those having no intermediate layer of the present invention (Sample No. 1) and those having an intermediate layer but having a material different from the scope of the present invention (Sample N).
o. 2 to 4) show the results produced in the same manner as above.
【００５２】[0052]
【表１】[Table 1]
【００５３】表１より明らかなように、中間層が全くな
い試料Ｎｏ．１では、容量がほとんど得られなかった。
中間層としてコンデンサと同一組成のものを用いたＮ
ｏ．２では、中間層の焼結温度は容量層と等しく、基板
層より低くなるが、この場合も容量が極めて小さかっ
た。Ａｌ2Ｏ3を用いたＮｏ．３では、中間層の焼結温度
は容量層や基板層より高くなるが、基板材料が多量のＡ
ｌ2Ｏ3をもともと含むものであるために中間層とほとん
ど反応しない。この場合も容量は小さかった。中間層と
してBi9Ca4Nb6Ox （焼結温度９００℃）を用いたＮｏ．
４では、中間層の焼結温度は容量層より高いが基板層と
等しく、この場合も容量は小さかった。As is clear from Table 1, the sample No. In the case of 1, almost no capacity was obtained.
An N layer having the same composition as the capacitor was used as the intermediate layer.
o. In No. 2, the sintering temperature of the intermediate layer was the same as that of the capacitor layer and lower than that of the substrate layer. No. 1 using Al2 O3 . In No. 3, the sintering temperature of the intermediate layer is higher than that of the capacitor layer or the substrate layer, but the substrate material is
Since it originally contains l2 O3 , it hardly reacts with the intermediate layer. Again, the capacity was small. No. 9 using Bi9 Ca4 Nb6 Ox (sintering temperature 900 ° C.) as the intermediate layer.
In No. 4, the sintering temperature of the intermediate layer was higher than that of the capacitor layer, but was equal to that of the substrate layer. In this case also, the capacity was small.
【００５４】これに対して、ＭｇＯを主成分とする中間
層を持つ試料Ｎｏ．５〜１２では、誘電率９００以上と
なった。また、ｔａｎδについては０．０３以下であ
り、実用上問題のない値となった。ＭｇＯは焼成温度が
基板層より高く、基板材料に含まれるガラスと反応する
ために、基板材料からの容量層への拡散が妨げられたも
のと推測される。On the other hand, Sample No. 1 having an intermediate layer mainly composed of MgO was used. In the case of 5 to 12, the dielectric constant was 900 or more. The value of tan δ was 0.03 or less, which was a value having no practical problem. It is presumed that MgO has a higher sintering temperature than the substrate layer and reacts with the glass contained in the substrate material, so that diffusion from the substrate material to the capacitor layer is prevented.
【００５５】次に、Ｎｏ．５〜１２を比較すると、第２
中間層として容量層とおなじ層を容量層側にもつＮｏ．
６，９〜１２は、ＭｇＯ層が容量層と隣接するＮｏ．
５，７，８に比べ、同一中間層厚さでも、より高誘電
率、高容量であった。また、ＭｇＯのみで副成分を含ま
ない第１中間層を持つＮｏ．５，６，７は、中間層の強
度が低く層間剥離を生じやすかった。この影響のため
か、壊れないように慎重に扱った試料の容量を測定して
も、複数作製したコンデンサの容量にバラツキが大き
く、その平均値も比較的小さかった。これに対して、副
成分としてＳｉＯ2，Ａｌ2Ｏ3，Ｂ2Ｏ3，ＰｂＯのいず
れかを副成分として含む場合は、このような問題を生じ
にくく、バラツキも小さく、平均値としての容量、誘電
率も大きかった。Next, No. Comparing 5 to 12, the second
No. 1 having the same layer as the intermediate layer on the capacitor layer side.
Nos. 6, 9 to 12 are Nos. 6 and 7 in which the MgO layer is adjacent to the capacitor layer.
Compared with 5, 7, and 8, even with the same thickness of the intermediate layer, the dielectric constant and the capacity were higher. No. 1 having a first intermediate layer containing only MgO and containing no subcomponents. In Nos. 5, 6, and 7, the strength of the intermediate layer was low and delamination was likely to occur. Due to this effect, even when the capacitance of the sample which was carefully handled so as not to be broken was measured, the capacitance of the plurality of manufactured capacitors was large and the average value was relatively small. On the other hand, when any one of SiO2 , Al2 O3 , B2 O3 , and PbO is contained as a sub-component, such a problem hardly occurs, the variation is small, and the capacitance as an average value is reduced. And the dielectric constant was also large.
【００５６】（実施例２）本発明の第１および第２中間
層を備えた場合の、第１中間層の材質の違いによる比較
をおこなった結果を表２に示す。表２に示した各試料
は、実施例１と同様の方法でコンデンサ内蔵基板を作製
し、同様に容量、誘電率、誘電正接を測定したものであ
る。なお、表２には、比較例として、第１中間層の材質
が本発明の範囲とは異なるもの（試料Ｎｏ．１，３，
４，６，１０〜１２、ただし、試料Ｎｏ．１は第２中間
層を備えていないものである）を上記と同様にして作製
した結果を示す。(Example 2) Table 2 shows the result of comparison based on the difference in the material of the first intermediate layer when the first and second intermediate layers of the present invention were provided. In each sample shown in Table 2, a substrate with a built-in capacitor was produced in the same manner as in Example 1, and the capacitance, the dielectric constant, and the dielectric loss tangent were measured in the same manner. In Table 2, as a comparative example, the material of the first intermediate layer is different from the range of the present invention (Sample Nos. 1, 3, and 3).
4, 6, 10 to 12, provided that the sample Nos. No. 1 does not include the second intermediate layer) in the same manner as described above.
【００５７】[0057]
【表２】[Table 2]
【００５８】表２より明らかなように、中間層の合計厚
は同じ２５μｍであっても、主成分に２価金属の酸化物
を用いている試料Ｎｏ．２，５，７〜９が誘電率１００
０以上となるのに対し、３価〜６価の金属の酸化物を用
いた試料Ｎｏ．３，４，６，１０〜１２と、コンデンサ
層と同じ組成よりなる中間層のみを用いた試料Ｎｏ．１
は、４００以下であり、ほとんど容量が得られなかっ
た。As is clear from Table 2, even though the total thickness of the intermediate layer is the same of 25 μm, Sample No. 2 using a divalent metal oxide as a main component was used. 2, 5, 7 to 9 have a dielectric constant of 100
0 or more, whereas Sample No. 3 using a trivalent to hexavalent metal oxide was used. Sample No. 3, in which only an intermediate layer having the same composition as the capacitor layer was used. 1
Was 400 or less, and almost no capacity was obtained.
【００５９】また、試料Ｎｏ．２，５，７〜９を比較す
ると特に、ＭｇＯ，ＣａＯ，ＺｎＯを用いたＮｏ．２，
５，８が誘電率３０００以上となって、大容量であっ
た。The sample No. When Nos. 2, 5, 7 to 9 were compared, in particular, No. 2 using MgO, CaO, and ZnO was used. 2,
5, 8 had a dielectric constant of 3000 or more, and had a large capacity.
【００６０】（実施例３）本発明の第１および第２中間
層を備えた場合の、第１および第２中間層の材質、厚さ
の違いによる比較をおこなった結果を表３に示す。表３
に示した各試料は、実施例１と同様の方法でコンデンサ
内蔵基板を作製し、同様に容量、誘電率、誘電正接を測
定したものである。(Example 3) Table 3 shows the results of comparison based on differences in the material and thickness of the first and second intermediate layers when the first and second intermediate layers of the present invention were provided. Table 3
In each of the samples shown in (1), a substrate with a built-in capacitor was prepared in the same manner as in Example 1, and the capacitance, dielectric constant, and dielectric loss tangent were measured in the same manner.
【００６１】[0061]
【表３】[Table 3]
【００６２】表１の試料Ｎｏ．６，９と表３の試料Ｎ
ｏ．１〜３より明らかなように、第１中間層のＭｇＯに
添加するＳｉＯ2は、増やし過ぎるとかえって誘電率が
低下する傾向にあり、１００％（主成分であるＭｇＯと
１対１の重量比）の添加では、かなり低誘電率となっ
た。従って、あくまで２価金属酸化物を主成分（全体重
量の５１重量パーセント以上）にする事が重要である。Sample No. 1 in Table 1 Samples N of 6, 9 and Table 3
o. As is clear from FIGS. 1 to 3, when the amount of SiO2 added to MgO of the first intermediate layer is excessively increased, the dielectric constant tends to decrease, and 100% (weight ratio of MgO as a main component to 1: 1 by weight). The addition of) resulted in a considerably low dielectric constant. Therefore, it is important to use a divalent metal oxide as a main component (51% by weight or more of the total weight).
【００６３】次に、試料Ｎｏ．１と試料Ｎｏ．４〜６よ
り、中間層厚は合計厚が１０μｍと薄くても明瞭な効果
がある。しかしながら、本来不必要な層である中間層の
合計厚が３０μｍを越える試料Ｎｏ．６は、望ましくな
い。また、第一中間層の厚さが１０μｍを越える試料Ｎ
ｏ．５は、副成分を含むにもかかわらず、その部分の強
度が低く、クラック等が生じやすくなるためか、バラツ
キが大きくなり、平均の容量、誘電率も若干低下した。Next, the sample No. 1 and Sample No. From 4 to 6, even if the total thickness of the intermediate layer is as thin as 10 μm, there is a clear effect. However, the sample No. in which the total thickness of the intermediate layer, which is originally an unnecessary layer, exceeds 30 μm. 6 is undesirable. Further, the sample N in which the thickness of the first intermediate layer exceeds 10 μm
o. In the case of No. 5, despite the inclusion of sub-components, the strength of the portion was low, cracks and the like were likely to occur, or the dispersion was large, and the average capacity and dielectric constant were slightly reduced.
【００６４】次に、第２中間層にコンデンサ層と同じ組
成にＰｂＯまたはＢｉ2Ｏ3を１０％加えて、より低温で
焼結可能としたものを用いた試料Ｎｏ．７〜１２は、こ
れらを加えないコンデンサ層と全く同じものを用いた場
合に比べて、より高誘電率、大容量となった。この理由
は明らかではないが、第２中間層が早期に緻密化する事
により、基板層からの拡散の効果をより小さくできるも
のと考えられる。また、第１中間層の主成分をＭｇＯ、
ＣａＯやＺｎＯのみにした試料Ｎｏ．７〜９，１２と、
ＺｎＯと他の２種を組み合わせた試料Ｎｏ．１０，１１
を比べると、ＺｎＯとＭｇＯあるいはＣａＯを組み合わ
せる事で、より高誘電率化した。Next, 10% of PbO or Bi2 O3 was added to the second intermediate layer in the same composition as that of the capacitor layer, so that the sample could be sintered at a lower temperature. Nos. 7 to 12 had higher dielectric constants and larger capacities than those obtained by using exactly the same capacitor layers as those to which these were not added. Although the reason is not clear, it is considered that the effect of diffusion from the substrate layer can be further reduced by making the second intermediate layer dense at an early stage. Further, the main component of the first intermediate layer is MgO,
Sample No. containing only CaO or ZnO. 7-9, 12,
Sample No. 1 in which ZnO and the other two types were combined. 10,11
By comparing ZnO and MgO or CaO, a higher dielectric constant was obtained.
【００６５】（実施例４）本発明の第１および第２中間
層を備えた場合の、本発明の最外層を用いて製造を行う
ことに関し、焼成後の基板状態および容量測定の比較を
おこなった結果を表４に示す。なお、表４には、比較例
として、本発明の第１中間層を有しないもの（試料Ｎ
ｏ．１）についても、その焼成後の基板状態および容量
測定の結果を示す。(Example 4) In the case where the first and second intermediate layers of the present invention were provided, manufacturing was performed using the outermost layer of the present invention. The results are shown in Table 4. Table 4 shows, as a comparative example, those without the first intermediate layer of the present invention (sample N
o. Regarding 1), the state of the substrate after firing and the results of the capacitance measurement are also shown.
【００６６】配線用およびコンデンサ電極用導体ペース
トとビア用導体ペーストについては、実施例１と同様の
方法で作製した、銀系配線用およびコンデンサ電極用導
体ペーストとビア用導体ペーストを用いた試料（試料Ｎ
ｏ．１，２，６，７，９）、銅粉末を用いて同様に作製
した銅系配線用およびコンデンサ電極用導体ペーストと
ビア用導体ペーストを用いた試料（試料Ｎｏ．４，５，
８）、酸化銅粉末を用いて同様に作製した酸化銅系配線
用およびコンデンサ電極用導体ペーストとビア用導体ペ
ーストを用いた試料（試料Ｎｏ．３）を作製して比較を
おこなった。The conductor paste for wiring and capacitor electrode and the conductor paste for via were prepared in the same manner as in Example 1 using a silver-based conductor paste for conductor and capacitor electrode and a conductor paste for via. Sample N
o. 1, 2, 6, 7, 9), and samples using a copper-based wiring and capacitor electrode conductor paste and a via conductor paste similarly prepared using copper powder (Sample Nos. 4, 5, and 5).
8) A sample (sample No. 3) using a copper oxide-based wiring paste and a conductor paste for a capacitor electrode and a conductor paste for a via similarly prepared using a copper oxide powder was prepared and compared.
【００６７】また、中間層用として、実施例１と同様の
方法で、第１中間層形成用にＭｇＯに１ｗｔ％のＳｉＯ
2を加えたペーストと、第２中間層形成用にコンデンサ
用誘電体に２０ｗｔ％のＰｂＯを加えたペースト、およ
び、それぞれのペーストと同じ組成のグリーンシートを
作製した。ペーストは、表４中の中間層の欄に「印刷」
と記載されている試料に用い、グリーンシートは、表４
中の中間層の欄に「積層」と記載されている試料に用い
るものである。For the intermediate layer, 1 wt% of SiO 2 was added to MgO in the same manner as in Example 1 to form the first intermediate layer.
2 were added, a paste in which 20 wt% of PbO was added to a capacitor dielectric for forming the second intermediate layer, and a green sheet having the same composition as each paste were prepared. The paste is printed in the middle layer column in Table 4.
Table 4
It is used for a sample in which “lamination” is described in the middle layer.
【００６８】さらに、実施例１と同様の方法で、アクリ
ル系樹脂バインダを用いて、厚み約２００μｍの基板層
グリーンシート、容量層グリーンシートを作製した。ま
た、表４中の最外層の欄に「アルミナ」と記載されてい
る試料（試料Ｎｏ．１〜３）に本発明の最上層として用
いる厚み約２００μｍのアルミナグリーンシートと、表
４中の最外層の欄に「銅粉」と記載されている試料（試
料Ｎｏ．４）に本発明の最上層として用いる厚み約１０
０μｍの銅グリーンシートを作製した。また、表４中の
最外層の欄に「銅箔」と記載されている試料（試料Ｎ
ｏ．５）に本発明の最上層として用いる厚さ５０μｍの
表面粗化処理をした銅箔も用意した。Further, in the same manner as in Example 1, a green sheet for a substrate layer and a green sheet for a capacitor layer having a thickness of about 200 μm were produced using an acrylic resin binder. In addition, an alumina green sheet having a thickness of about 200 μm to be used as the uppermost layer of the present invention was used for the samples (Sample Nos. 1 to 3) in which “Alumina” was described in the column of the outermost layer in Table 4; A sample having a thickness of about 10 to be used as the uppermost layer of the present invention for a sample in which “copper powder” is described in the column of outer layer (sample No. 4)
A 0 μm copper green sheet was produced. In addition, the samples described as “copper foil” in the column of the outermost layer in Table 4 (sample N
o. In 5), a 50 μm-thick surface-roughened copper foil used as the uppermost layer of the present invention was also prepared.
【００６９】これらのシートとペーストを用いて、実施
例１と同様の方法で、表４に示す構成の９種類の積層体
を作製した。グリーンシートを用いて中間層を設ける方
法は実施例１と全く同じである。ペーストを用いる場合
は、基板層グリーンシートの、容量層を挟む位置に、各
ペーストを用いて印刷法により中間層を設ける。この上
に電極を印刷で形成する。容量層は、表４中の容量層の
欄に「積層」と記載されている試料（試料Ｎｏ．２，
７，９）については、実施例１と同様の方法で形成し、
表４中の容量層の欄に「転写」と記載されている試料
（試料Ｎｏ．１，３〜６，８）については、シートの必
要部位以外をあらかじめ除去しておき、このシートを、
電極を印刷した積層体上に、ベースフィルムを上にして
積層し、次にベースフィルムを剥がす事で、中間層と電
極のある部位にのみ転写形成した。また、本実施例には
示していないが、容量層もペースト化して、印刷で形成
する方法でも形成が可能であった。なお、層厚は、焼成
後第１中間層が８μｍ、第２中間層が１７μｍ、容量層
が６μｍとなるように調整した。Using these sheets and pastes, nine kinds of laminates having the constitution shown in Table 4 were produced in the same manner as in Example 1. The method of providing an intermediate layer using a green sheet is exactly the same as in Example 1. When a paste is used, an intermediate layer is provided by a printing method using each paste at a position sandwiching the capacitor layer in the substrate layer green sheet. An electrode is formed thereon by printing. The capacitance layer is a sample (Sample No. 2, Sample No. 2) described as “lamination” in the column of the capacitance layer in Table 4.
7, 9) are formed in the same manner as in Example 1,
With respect to the samples (Sample Nos. 1, 3 to 6, and 8) in which “transfer” is described in the column of the capacitance layer in Table 4, portions other than the necessary portions of the sheet were removed in advance, and this sheet was removed.
The base film was laminated on the laminate on which the electrodes were printed, and then the base film was peeled off to transfer and form only the portion where the intermediate layer and the electrodes were. Although not shown in the present embodiment, the capacitor layer can also be formed by a method of forming a paste and forming the capacitor layer by printing. The layer thickness was adjusted so that the first intermediate layer became 8 μm, the second intermediate layer became 17 μm, and the capacitor layer became 6 μm after firing.
【００７０】得られた積層体のうち、銀系および酸化銅
系導体ペーストを含むものは、加熱炉内の大気中６００
℃で脱バインダ処理し、酸化銅系導体ペースト含むもの
は１０％の水素を含む窒素中で３００℃で酸化銅を還元
した。銅系導体ペーストを有するものは、酸素５０ｐｐ
ｍを含む窒素中７００℃で脱バインダ処理をした。焼成
は、いずれの試料も窒素中で９００℃で行った。その後
焼結体の両側にアルミナあるいは銅を設けたものについ
ては、アルミナは洗浄により全て、銅はエッチングによ
り一部を残して除去し、コンデンサ内蔵無機多層基板を
得た。こうして得られた基板の外観を検査し、また内蔵
コンデンサの容量をＬＣＲメーターにて、周波数１ｋＨ
ｚで測定した。結果を表４に示す。Among the obtained laminates, those containing silver-based and copper oxide-based conductor pastes were prepared by heating at 600.degree.
The binder containing copper oxide conductor paste was reduced at 300 ° C. in nitrogen containing 10% of hydrogen at 300 ° C. Those having a copper-based conductor paste have an oxygen concentration of 50 pp.
The binder was removed at 700 ° C. in nitrogen containing m. The firing was performed at 900 ° C. in nitrogen for all samples. Thereafter, with respect to the case where alumina or copper was provided on both sides of the sintered body, all of the alumina was removed by washing, and part of the copper was removed by etching to obtain an inorganic multilayer substrate with a built-in capacitor. The appearance of the substrate thus obtained was inspected, and the capacity of the built-in capacitor was measured with an LCR meter at a frequency of 1 kHz.
Measured in z. Table 4 shows the results.
【００７１】[0071]
【表４】[Table 4]
【００７２】試料Ｎｏ．１〜３は、焼成による面内収縮
率は１％以下、試料Ｎｏ．４は約２％、試料Ｎｏ．５
は、ほぼ０％、試料Ｎｏ．６，８，９は約１６％、試料
Ｎｏ．７は約５％であった。表４より明らかなように、
ＭｇＯ系第一中間層を設けながら、最外層にアルミナ、
あるいは銅の層を設けなかった試料Ｎｏ．６〜８では、
設けた場合に比して、良好な焼結体を得る事が出来なか
った。第一中間層を印刷法により、基板の一部の部位に
設けた試料Ｎｏ．６では基板に凹凸が生じ、一方、第一
中間層を積層により基板全体に設けた試料Ｎｏ．７，８
では焼成終了のハンドリング時に容易に剥離した。これ
は、第一中間層がこの温度ではほとんど焼結収縮を示さ
ないためと考えられる。一方、ＭｇＯ系第一中間層を設
けず、第２中間層のみとした試料Ｎｏ．９では、最外層
を設けなくても基板の焼成後の状態は良好であったが、
容量は得られなかった。これらに対して、最外層と第一
中間層を設けた試料Ｎｏ．１〜５では、中間層や容量層
の形成法に無関係に良好な基板が得られ、内蔵コンデン
サの容量も約１μＦ/ｃｍ2と大きかった。Sample No. Sample Nos. 1 to 3 have an in-plane shrinkage of 1% or less due to firing. 4 was about 2%, and sample No. 5
Is almost 0%, and the sample No. Sample Nos. 6, 8, and 9 were about 16%. 7 was about 5%. As is clear from Table 4,
While providing the MgO-based first intermediate layer, alumina,
Alternatively, Sample No. having no copper layer was provided. In 6-8,
A better sintered body could not be obtained as compared with the case where the sintering member was provided. Sample No. 1 in which the first intermediate layer was provided on a part of the substrate by a printing method. In Sample No. 6, irregularities were formed on the substrate, while Sample No. 6 in which the first intermediate layer was provided over the entire substrate by lamination. 7,8
Peeled off easily at the end of firing. This is presumably because the first intermediate layer shows almost no sintering shrinkage at this temperature. On the other hand, Sample No. having no MgO-based first intermediate layer and only the second intermediate layer was used. In No. 9, although the state after firing of the substrate was good without providing the outermost layer,
No capacity was obtained. On the other hand, the sample No. having the outermost layer and the first intermediate layer was provided. In Nos. 1 to 5, good substrates were obtained irrespective of the method of forming the intermediate layer and the capacitor layer, and the capacity of the built-in capacitor was as large as about 1 μF / cm2 .
【００７３】（実施例５）導体材料中の金属成分および
無機絶縁材料について、実施例１〜４において用いられ
たものと違うものを用いた場合の効果について確認した
結果を以下に述べる。(Example 5) The results obtained by examining the effect of using a metal component and an inorganic insulating material in the conductor material different from those used in Examples 1 to 4 will be described below.
【００７４】実施例１と同様の方法で、タングステン系
配線用およびコンデンサ電極用導体ペーストを作製し
た。また実施例１と同様の方法で、厚み基板層用の約２
００μｍのアルミナ＋０．１％マグネシア基板層グリー
ンシート（焼結温度１４５０℃）と、容量層用約２０μ
ｍのチタン酸バリウムグリーンシート（焼結温度１４５
０℃）と、中間層用約３０μｍのＣａＯグリーンシート
（焼結温度１８００℃）と、最外層用の厚み約２００μ
ｍの窒化アルミニウムグリーンシートを作製した（焼結
温度１８００℃）。In the same manner as in Example 1, conductor pastes for tungsten-based wiring and capacitor electrodes were prepared. In the same manner as in Example 1, about 2
00μm alumina + 0.1% magnesia substrate layer green sheet (sintering temperature 1450 ° C) and about 20μ
m barium titanate green sheet (sintering temperature 145
0 ° C.), a CaO green sheet of about 30 μm for the intermediate layer (sintering temperature 1800 ° C.), and a thickness of about 200 μm for the outermost layer
m of aluminum nitride green sheets (sintering temperature: 1800 ° C.).
【００７５】これらのシートとペーストを用いて、実施
例１と同様の方法で積層体を作製し、水素中で９００℃
で脱バインダした後、１４５０℃で焼成して、コンデン
サ内蔵基板を得た。比較のため、中間層に容量層と同じ
チタン酸バリウムよりなる層を設けたものも作製した。
両者の内蔵コンデンサの容量をＬＣＲメーターにて、周
波数１ｋＨｚで測定したところ、前者は０．３μＦ/ｃ
ｍ2であったのに対し、後者は０．０１μＦ/ｃｍ2以下
であった。この結果により、実施例１〜４において用い
られたものと違うものを用いた場合の効果が確認され
た。Using these sheets and paste, a laminate was prepared in the same manner as in Example 1, and was heated at 900 ° C. in hydrogen.
After removing the binder, firing was performed at 1450 ° C. to obtain a substrate with a built-in capacitor. For comparison, an intermediate layer provided with the same layer made of barium titanate as the capacitor layer was also manufactured.
When the capacity of both built-in capacitors was measured with an LCR meter at a frequency of 1 kHz, the former was 0.3 μF / c
m2 , whereas the latter was 0.01 μF / cm2 or less. From these results, it was confirmed that an effect obtained when a different one from those used in Examples 1 to 4 was used.
【００７６】[0076]
【発明の効果】以上説明したところから明らかなよう
に、本発明は、コンデンサを基板中に同時焼成で一括形
成する事ができ、集積度、実装密度を向上させるコンデ
ンサ内蔵基板およびその製造方法を提供することができ
る。As is apparent from the above description, the present invention provides a capacitor built-in substrate capable of simultaneously forming capacitors in a substrate by simultaneous firing and improving the degree of integration and mounting density, and a method of manufacturing the same. Can be provided.
【図１】本発明の第１の実施の形態におけるコンデンサ
内蔵基板を示す断面模式図である。FIG. 1 is a schematic cross-sectional view illustrating a substrate with a built-in capacitor according to a first embodiment of the present invention.
【図２】本発明の第１の実施の形態におけるコンデンサ
内蔵基板の別の一例を示す断面模式図である。FIG. 2 is a schematic cross-sectional view showing another example of the substrate with a built-in capacitor according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態におけるコンデンサ
内蔵基板を示す断面模式図である。FIG. 3 is a schematic sectional view showing a substrate with a built-in capacitor according to a second embodiment of the present invention.
１ 基板層 ２ 容量層 ３ 中間層 ４ 電極層 ５ 配線層 ６ ビア ７ 最外層 ８ 第１中間層 ９ 第２中間層 REFERENCE SIGNS LIST 1 substrate layer 2 capacitance layer 3 intermediate layer 4 electrode layer 5 wiring layer 6 via 7 outermost layer 8 first intermediate layer 9 second intermediate layer
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12871898AJP3955389B2 (en) | 1998-05-12 | 1998-05-12 | Capacitor-embedded substrate and manufacturing method thereof |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12871898AJP3955389B2 (en) | 1998-05-12 | 1998-05-12 | Capacitor-embedded substrate and manufacturing method thereof |
| Publication Number | Publication Date |
|---|---|
| JPH11330705Atrue JPH11330705A (en) | 1999-11-30 |
| JP3955389B2 JP3955389B2 (en) | 2007-08-08 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12871898AExpired - Fee RelatedJP3955389B2 (en) | 1998-05-12 | 1998-05-12 | Capacitor-embedded substrate and manufacturing method thereof |
| Country | Link |
|---|---|
| JP (1) | JP3955389B2 (en) |
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|---|---|---|---|---|
| JP2002198646A (en)* | 2000-12-26 | 2002-07-12 | Kyocera Corp | Method for manufacturing multilayer wiring board |
| JP2002290053A (en)* | 2001-03-28 | 2002-10-04 | Kyocera Corp | Multilayer wiring board |
| JP2005285968A (en)* | 2004-03-29 | 2005-10-13 | Kyocera Corp | Glass ceramic multilayer wiring board with built-in capacitor |
| JP2006210924A (en)* | 2005-01-26 | 2006-08-10 | E I Du Pont De Nemours & Co | Multiple constituent element ltcc substrate having core of high dielectric constant ceramic material, and method of developing the same |
| JP2007184369A (en)* | 2006-01-05 | 2007-07-19 | Kyocera Corp | Wiring board and manufacturing method thereof |
| US7855488B2 (en) | 1999-12-16 | 2010-12-21 | Epcos Ag | Piezoceramic device |
| JPWO2013084334A1 (en)* | 2011-12-08 | 2015-04-27 | 日本碍子株式会社 | Large-capacity module substrate and method for manufacturing the substrate |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7855488B2 (en) | 1999-12-16 | 2010-12-21 | Epcos Ag | Piezoceramic device |
| US8209828B2 (en) | 1999-12-16 | 2012-07-03 | Epcos Ag | Method for making a piezoceramic device |
| JP2002198646A (en)* | 2000-12-26 | 2002-07-12 | Kyocera Corp | Method for manufacturing multilayer wiring board |
| JP2002290053A (en)* | 2001-03-28 | 2002-10-04 | Kyocera Corp | Multilayer wiring board |
| JP2005285968A (en)* | 2004-03-29 | 2005-10-13 | Kyocera Corp | Glass ceramic multilayer wiring board with built-in capacitor |
| JP2006210924A (en)* | 2005-01-26 | 2006-08-10 | E I Du Pont De Nemours & Co | Multiple constituent element ltcc substrate having core of high dielectric constant ceramic material, and method of developing the same |
| JP2007184369A (en)* | 2006-01-05 | 2007-07-19 | Kyocera Corp | Wiring board and manufacturing method thereof |
| JPWO2013084334A1 (en)* | 2011-12-08 | 2015-04-27 | 日本碍子株式会社 | Large-capacity module substrate and method for manufacturing the substrate |
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| JP3955389B2 (en) | 2007-08-08 |
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