【０００１】[0001]
【発明の属する技術分野】この発明は、固体撮像装置に
関するものである。[0001] The present invention relates to a solid-state imaging device.
【０００２】[0002]
【従来の技術】近年、固体撮像装置は様々な分野で広く
利用されており、これに伴い技術革新が進んでいる。特
に小型化に関する技術開発は目覚ましいものがあり、こ
の種の固体撮像装置としては図６に示すようなものが知
られている。図６は固体撮像装置を表しており、２１は
基板、２２はＣＣＤチップ、２３は導電性物質、２４は
撮像レンズ、２５はレンズホルダー、２６は封止樹脂、
２７はＩＣ、２８はコンデンサ、２９は抵抗である。ま
た、図７は従来例の光学系に着目して説明するための図
面であり、構成要素は図６と同様である。2. Description of the Related Art In recent years, solid-state imaging devices have been widely used in various fields, and technical innovations have been progressing with this. In particular, there has been remarkable technological development relating to miniaturization, and a solid-state imaging device of this type is known as shown in FIG. FIG. 6 shows a solid-state imaging device, 21 is a substrate, 22 is a CCD chip, 23 is a conductive substance, 24 is an imaging lens, 25 is a lens holder, 26 is a sealing resin,
27 is an IC, 28 is a capacitor, and 29 is a resistor. FIG. 7 is a diagram for explaining the conventional optical system by focusing on the optical system, and the components are the same as those in FIG.
【０００３】この従来の固体撮像装置について図６を用
いて説明すると、絶縁性材料で形成されその表面に導電
性のプリント配線を設けた基板２１の表面にＣＣＤチッ
プ２２が固設されている。基板２１とＣＣＤチップ２２
とは通常バンプと呼ばれる導電性物質２３で電気的に接
続されており、基板２１とＣＣＤチップ２２の間の隙間
に封止樹脂２６を流し込み、封止樹脂２６が硬化する際
に収縮することで基板２１とＣＣＤチップ２２とを物理
的に固定している。この手法は一般にバンプ接着と呼ば
れ、固体撮像装置の小型化に対し有効とされている技術
である。The conventional solid-state imaging device will be described with reference to FIG. 6. A CCD chip 22 is fixed on a surface of a substrate 21 formed of an insulating material and provided with conductive printed wiring on the surface thereof. Substrate 21 and CCD chip 22
Are electrically connected to each other by a conductive substance 23 usually called a bump. The sealing resin 26 is poured into a gap between the substrate 21 and the CCD chip 22 and contracts when the sealing resin 26 is cured. The substrate 21 and the CCD chip 22 are physically fixed. This technique is generally called bump bonding and is a technique that is effective for miniaturization of solid-state imaging devices.
【０００４】このＣＣＤチップ２２の上方に位置する基
板２１には、ＣＣＤチップ２２の有効画素領域３１に対
応する位置に開口部３０が形成されており、さらにその
上方に位置するように撮像レンズ２４を組み込んだレン
ズホルダー２５が基板２１に取り付けられている。ま
た、基板２１には、ＣＣＤチップ２２の駆動や信号処理
に必要な部品としてＩＣ２７、コンデンサ２８、抵抗２
９などが表面実装されている。An opening 30 is formed in the substrate 21 located above the CCD chip 22 at a position corresponding to the effective pixel area 31 of the CCD chip 22, and the imaging lens 24 is further positioned above the opening 30. Is mounted on the substrate 21. The substrate 21 includes components required for driving the CCD chip 22 and processing signals, such as an IC 27, a capacitor 28, and a resistor 2.
9 and the like are surface mounted.
【０００５】そして、撮像レンズ２４で集められた光Ｌ
は、基板２１の開口部３０を通じてＣＣＤチップ２２の
有効画素領域３１に入り、ＣＣＤチップ２２の表面にて
結像することで電気信号に変換され、ＣＣＤチップ２２
から映像信号を出力する構成になっている。Then, the light L collected by the imaging lens 24
Enters the effective pixel area 31 of the CCD chip 22 through the opening 30 of the substrate 21, and is converted into an electric signal by forming an image on the surface of the CCD chip 22.
Is configured to output a video signal.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、このよ
うな従来の固体撮像装置においてはいくつかの課題があ
る。図７を用いて説明すると、まず撮像レンズ２４がＣ
ＣＤチップ２２から遠い位置にある場合（図７で破線に
て表示されている位置）、入射光線ＬはＣＣＤチップ２
２に対し鉛直方向に近い角度で入射するが（図７で１点
鎖線にて表示されている入射光線Ｌ′）、撮像レンズ２
４がＣＣＤチップ２２から近い位置にある場合（図７で
実線にて表示されている位置）、入射光線ＬはＣＣＤチ
ップ２２に対し鉛直方向を基準として大きな角度で入射
する（図７で実線にて表示されている入射光線Ｌ″）。However, such a conventional solid-state imaging device has several problems. To explain with reference to FIG.
In the case where it is located far from the CD chip 22 (the position indicated by the broken line in FIG. 7), the incident light L
2 at an angle close to the vertical direction (incident light beam L ′ indicated by a dashed line in FIG. 7),
4 is located near the CCD chip 22 (the position indicated by the solid line in FIG. 7), the incident light L enters the CCD chip 22 at a large angle with respect to the vertical direction (in FIG. Incident light beam L ″).
【０００７】固体撮像装置の小型化を実現するために
は、ＣＣＤチップ２２と撮像レンズ２４との距離は小さ
いことが望ましい。また、撮影可能な条件範囲を拡げる
ためには撮像レンズ２４は明るい方が望ましく、必然的
に撮像レンズ２４の口径は大きくなる。したがって、固
体撮像装置の小型化・高性能化を行うと、撮像レンズ２
４の周辺部を通ってＣＣＤチップ２２に入射する光Ｌを
ＣＣＤチップ２２に対して鉛直方向に入射させることは
難しくなる。このため、撮像レンズ２４にＣＣＤチップ
２２を近づけた場合、レンズの最外部を通る入射光線
Ｌ″が基板２１に遮断されることになり、結果ＣＣＤチ
ップ２２の有効画素領域３１の最外部にて通常ケラレと
呼ばれる周辺部の光量不足が生じる問題があった。この
問題を回避するためには、基板２１の開口部３０の切断
面と、ＣＣＤチップ２２の有効画素領域３１との距離を
大きくとればよいが、これはＣＣＤチップ２２の大型化
につながり、システムのコストダウンが難しいという問
題がある。また、前記のように基板２１とＣＣＤチップ
２２は、両者の隙間に封止樹脂２６を流し込み、封止樹
脂２６が硬化する際に収縮することで物理的に固設して
いるため、封止樹脂２６を流し込む面積を大きくとるこ
とが機器の信頼性向上に大きく寄与する。このため基板
２１の開口部３０の切断面とＣＣＤチップ２２の有効画
素領域３１との距離を大きくとることは、封止樹脂２６
の流れ込む面積の縮小を意味し、信頼性確保の観点から
は大きな課題があった。[0007] In order to reduce the size of the solid-state imaging device, it is desirable that the distance between the CCD chip 22 and the imaging lens 24 be small. It is desirable that the imaging lens 24 be bright in order to widen the condition range in which imaging can be performed, and inevitably the aperture of the imaging lens 24 becomes large. Therefore, when the size and performance of the solid-state imaging device are reduced, the imaging lens
It is difficult to make the light L incident on the CCD chip 22 through the peripheral portion of the LED chip 4 perpendicular to the CCD chip 22. For this reason, when the CCD chip 22 is brought close to the imaging lens 24, the incident light beam L ″ passing through the outermost part of the lens is blocked by the substrate 21, and as a result, the outermost part of the effective pixel area 31 of the CCD chip 22. In order to avoid this problem, the distance between the cut surface of the opening 30 of the substrate 21 and the effective pixel area 31 of the CCD chip 22 must be increased. However, this leads to an increase in the size of the CCD chip 22 and makes it difficult to reduce the cost of the system, and the sealing resin 26 is poured into the gap between the substrate 21 and the CCD chip 22 as described above. Since the sealing resin 26 contracts when it hardens, it is physically fixed, so that a large area into which the sealing resin 26 is poured greatly contributes to improvement of the reliability of the device. To. Therefore to increase the distance between the effective pixel region 31 of the cut surface and the CCD chip 22 of the opening 30 of the substrate 21, the sealing resin 26
This means a reduction in the area into which the fluid flows, and there was a major problem from the viewpoint of ensuring reliability.
【０００８】この発明は、ＣＣＤの有効画素領域の周辺
部における光量不足を防ぎ、かつ高信頼性，小型化，高
性能化が図れる固体撮像装置を提供することを目的とす
る。SUMMARY OF THE INVENTION It is an object of the present invention to provide a solid-state imaging device capable of preventing shortage of light amount in a peripheral portion of an effective pixel area of a CCD and achieving high reliability, miniaturization, and high performance.
【０００９】[0009]
【課題を解決するための手段】請求項１記載の固体撮像
装置は、光が入射可能な開口部を形成した基板と、開口
部に有効画素領域を対応させて基板の一面に装着した固
体撮像素子と、基板の他面側に設けられ開口部を通して
有効画素領域に集光する撮像レンズとを備え、開口部が
基板の他面側に向けて拡開したことを特徴とするもので
ある。According to a first aspect of the present invention, there is provided a solid-state imaging device comprising: a substrate having an opening through which light can enter; and a solid-state imaging device mounted on one surface of the substrate with an effective pixel area corresponding to the opening. An element and an imaging lens provided on the other surface side of the substrate and condensing light to the effective pixel area through the opening, wherein the opening is widened toward the other surface of the substrate.
【００１０】請求項２記載の固体撮像装置は、光が入射
可能な開口部を形成した基板と、開口部に有効画素領域
を対応させて基板の一面に装着した固体撮像素子と、基
板の他面側に設けられ開口部を通して有効画素領域に集
光する撮像レンズとを備え、基板が多層構造であって、
各層の開口を固体撮像素子側から撮像レンズ側に向けて
段階的に大きくして開口部を基板の他面側に向けて拡開
させたことを特徴とするものである。According to a second aspect of the present invention, there is provided a solid-state imaging device including: a substrate having an opening through which light can enter; a solid-state imaging device mounted on one surface of the substrate with an effective pixel area corresponding to the opening; An imaging lens provided on the surface side and condensing light on the effective pixel area through the opening, and the substrate has a multilayer structure,
The opening of each layer is gradually increased from the solid-state imaging device side to the imaging lens side, and the opening is expanded toward the other surface side of the substrate.
【００１１】固体撮像素子は、導電性物質にて基板に電
気的に接続しかつ封止樹脂にて基板に固定し、固体撮像
素子の有効画素領域の周囲に封止樹脂の流入を防ぐ凹状
または凸状の流入防御部を設けたり、またリードにて基
板に装着してもよい。この発明の固体撮像装置による
と、基板の開口部が、基板の固体撮像素子側から撮像レ
ンズ側に向けて拡開しているため、撮像レンズと固体撮
像素子との距離が近い場合でも、撮像レンズの最外部を
通る入射光が基板にて遮断されることなく固体撮像素子
の有効画素領域に入射する。また、封止樹脂にて固体撮
像素子を基板に固定する場合、封止樹脂の流れ込む面積
が広くなる。また、固体撮像素子の有効画素領域の周囲
に流入防御部を設けることで、有効画素領域に封止樹脂
が流入するのを防ぐことができる。また、開口部の大き
さを段階的に変化させた多層構造の基板を用いること
で、基板の製造段階で開口部を拡開加工することができ
る。さらに、固体撮像素子をリードにて基板に装着する
ことで、高度な加工技術を要することなく固体撮像装置
を製造でき、かつその厚みも小さくすることができる。The solid-state imaging device is electrically connected to the substrate with a conductive material and fixed to the substrate with a sealing resin to prevent the sealing resin from flowing around the effective pixel area of the solid-state imaging device. A convex inflow prevention portion may be provided, or may be attached to the substrate with a lead. According to the solid-state imaging device of the present invention, since the opening of the substrate is widened from the solid-state imaging device side of the substrate toward the imaging lens side, imaging can be performed even when the distance between the imaging lens and the solid-state imaging device is short. Incident light passing through the outermost part of the lens enters the effective pixel area of the solid-state imaging device without being blocked by the substrate. Further, when the solid-state imaging device is fixed to the substrate with the sealing resin, the area into which the sealing resin flows is increased. Further, by providing the inflow prevention portion around the effective pixel region of the solid-state imaging device, it is possible to prevent the sealing resin from flowing into the effective pixel region. In addition, by using a substrate having a multilayer structure in which the size of the opening is changed stepwise, the opening can be expanded at the stage of manufacturing the substrate. Further, by mounting the solid-state imaging device to the substrate with leads, a solid-state imaging device can be manufactured without requiring advanced processing technology, and its thickness can be reduced.
【００１２】[0012]
【発明の実施の形態】第１の実施の形態 この発明の第１の実施の形態について図１および図２を
参照しながら説明する。図１において、１は基板、２は
固体撮像素子となるＣＣＤチップ、３は導電性物質、４
は撮像レンズ、５はレンズホルダー、６は封止樹脂、７
はＩＣ、８はコンデンサ、９は抵抗である。また、図２
はこの実施の形態の光学系に着目して説明するための図
面であり、構成要素は図１と同様である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment A first embodiment of the present invention will be described with reference to FIGS. In FIG. 1, 1 is a substrate, 2 is a CCD chip serving as a solid-state imaging device, 3 is a conductive substance,
Is an imaging lens, 5 is a lens holder, 6 is a sealing resin, 7
Is an IC, 8 is a capacitor, and 9 is a resistor. FIG.
FIG. 2 is a diagram for explaining the optical system according to the present embodiment, focusing on the components, and the components are the same as those in FIG.
【００１３】すなわち、絶縁性材料で形成されその表面
に導電性のプリント配線を設けた基板１の一面に、ＣＣ
Ｄチップ２が装着されている。基板１とＣＣＤチップ２
とは通常バンプと呼ばれる導電性物質３で電気的に接続
されており、基板１とＣＣＤチップ２の間の隙間に封止
樹脂６を流し込み、封止樹脂６が硬化する際に収縮する
ことで基板１とＣＣＤチップ２とを物理的に固定してい
る。That is, one surface of a substrate 1 formed of an insulating material and provided with conductive printed wiring on the surface thereof,
D chip 2 is mounted. Substrate 1 and CCD chip 2
Is electrically connected to each other by a conductive material 3 usually called a bump. The sealing resin 6 is poured into a gap between the substrate 1 and the CCD chip 2 and contracts when the sealing resin 6 is cured. The substrate 1 and the CCD chip 2 are physically fixed.
【００１４】このＣＣＤチップ２の上方に位置する基板
１には、ＣＣＤチップ２の有効画素領域１１に対応する
位置に開口部１０が形成されている。開口部１０は、開
口内周面１２をテーパー状に形成することで、上方に向
けて拡開している。また、開口部１０の上方に位置する
ように撮像レンズ４を組み込んだレンズホルダー５が基
板１に取り付けられている。さらに、基板１には、ＣＣ
Ｄチップ２の駆動や信号処理に必要な部品としてＩＣ
７、コンデンサ８、抵抗９などが表面実装されている。On the substrate 1 located above the CCD chip 2, an opening 10 is formed at a position corresponding to the effective pixel area 11 of the CCD chip 2. The opening 10 expands upward by forming the opening inner peripheral surface 12 in a tapered shape. Further, a lens holder 5 incorporating the imaging lens 4 is mounted on the substrate 1 so as to be located above the opening 10. Further, the substrate 1 has a CC
IC as a component required for driving the D chip 2 and signal processing
7, a capacitor 8, a resistor 9, and the like are surface-mounted.
【００１５】そして、撮像レンズ４で集められた光Ｌ
は、基板１の開口部１０を通してＣＣＤチップ２の有効
画素領域１１に入り、ＣＣＤチップ２の表面にて結像す
ることで電気信号に変換され、ＣＣＤチップ２から映像
信号を出力する構成になっている。このように構成され
た固体撮像装置によると、基板１の開口部１０が、基板
１のＣＣＤチップ２側から撮像レンズ４側に向けて拡開
しているため、撮像レンズ４とＣＣＤチップ２との距離
が近い場合でも、撮像レンズ４の最外部を通る入射光が
基板１にて遮断されることなくＣＣＤチップ２の有効画
素領域１１に入射する。したがって、小型化、高性能化
が図れ、かつ固体撮像装置の周辺光量落ちが無くなり、
その撮像特性が向上する。The light L collected by the imaging lens 4
Enters the effective pixel area 11 of the CCD chip 2 through the opening 10 of the substrate 1, is converted into an electric signal by forming an image on the surface of the CCD chip 2, and outputs a video signal from the CCD chip 2. ing. According to the solid-state imaging device configured as described above, since the opening 10 of the substrate 1 expands from the CCD chip 2 side of the substrate 1 toward the imaging lens 4 side, the imaging lens 4 and the CCD chip 2 Is small, the incident light passing through the outermost part of the imaging lens 4 enters the effective pixel area 11 of the CCD chip 2 without being blocked by the substrate 1. Therefore, miniaturization and high performance can be achieved, and the peripheral light amount drop of the solid-state imaging device is eliminated.
The imaging characteristics are improved.
【００１６】また、封止樹脂６にてＣＣＤチップ２を基
板１に固定する際、封止樹脂６の流れ込む面積が広くな
り、固体撮像装置の信頼性の向上を図ることができる。 第２の実施の形態 図３はこの発明の第２の実施の形態の光学系に着目して
説明するための図面であり、第１の実施の形態と同一部
分は同一符号を付してその説明を省略する。Further, when the CCD chip 2 is fixed to the substrate 1 with the sealing resin 6, the area into which the sealing resin 6 flows is increased, and the reliability of the solid-state imaging device can be improved. Second Embodiment FIG. 3 is a diagram for explaining the optical system according to a second embodiment of the present invention by focusing on the same components, and the same parts as those in the first embodiment are denoted by the same reference numerals. Description is omitted.
【００１７】この実施の形態の固体撮像装置は、多層基
板１３を用い、その層毎に開口の大きさをＣＣＤチップ
２側から撮像レンズ４側に向かって段階的に大きくし、
開口内周面１４を階段状に傾斜させることで、開口部１
０を上方に向けて拡開させたものである。このように構
成された固体撮像装置においても、第１の実施の形態と
同様の効果が得られる。さらに、基板１３の製造段階で
開口部１０を拡開加工することができ、製造効率ならび
に加工精度の向上を図ることができる。The solid-state imaging device of this embodiment uses a multi-layer substrate 13 and gradually increases the size of the opening for each layer from the CCD chip 2 side to the imaging lens 4 side.
By inclining the opening inner peripheral surface 14 in a stepwise manner, the opening 1
0 is expanded upward. With the solid-state imaging device configured as described above, the same effects as those of the first embodiment can be obtained. Further, the opening 10 can be expanded at the stage of manufacturing the substrate 13, so that the manufacturing efficiency and the processing accuracy can be improved.
【００１８】第３の実施の形態 図４はこの発明の第３の実施の形態の光学系に着目して
説明するための図面であり、第１の実施の形態と同一部
分は同一符号を付してその説明を省略する。この実施の
形態の固体撮像装置は、ＣＣＤチップ１５がパッケージ
１６に装着されガラス１７にて封止されたＣＣＤ素子を
最小構成要素とし、ＣＣＤ素子に具備するリード１８を
用いて基板１に装着されている。Third Embodiment FIG. 4 is a drawing for explaining the optical system according to a third embodiment of the present invention, focusing on the same components as those in the first embodiment. The description is omitted. The solid-state imaging device according to this embodiment includes a CCD chip 15 mounted on a package 16 and a CCD element sealed with glass 17 as a minimum component, and mounted on a substrate 1 using a lead 18 provided on the CCD element. ing.
【００１９】このように構成された固体撮像装置におい
ても、第１の実施の形態と同様の効果が得られる。さら
に、高度な加工技術を必要とするバンプ接着を用いない
で固体撮像装置を製造しながら、かつその厚みを小さく
することが可能となり、機器の小型化を図る点で非常に
有用である。なお、基板については図３に示した多層構
造の基板１３を用いてもよい。In the solid-state imaging device thus configured, the same effects as in the first embodiment can be obtained. Furthermore, it is possible to reduce the thickness of the solid-state imaging device while manufacturing the solid-state imaging device without using bump bonding that requires advanced processing technology, which is very useful in reducing the size of the device. Note that the substrate 13 having the multilayer structure shown in FIG. 3 may be used as the substrate.
【００２０】第４の実施の形態 図５はこの発明の第４の実施の形態の光学系に着目して
説明するための図面であり、第１の実施の形態と同一部
分は同一符号を付してその説明を省略する。この実施の
形態の固体撮像装置は、ＣＣＤチップ２の表面において
有効画素領域１１の周辺に凸状の流入防御部１９を形成
したものであり、流入防御部１９を設けたことで、ＣＣ
Ｄチップ２と基板１を固定するための封止樹脂６がＣＣ
Ｄチップ２の有効画素領域１１へ流れ込むことを防ぐこ
とができる。Fourth Embodiment FIG. 5 is a diagram for explaining the optical system according to a fourth embodiment of the present invention, focusing on the same components as those in the first embodiment. The description is omitted. The solid-state imaging device according to the present embodiment has a convex inflow prevention portion 19 formed around the effective pixel region 11 on the surface of the CCD chip 2.
The sealing resin 6 for fixing the D chip 2 and the substrate 1 is CC
It can be prevented from flowing into the effective pixel area 11 of the D chip 2.
【００２１】流入防御部１９については充填樹脂６の性
質により凹状でもよく、近年の固体撮像素子には不可欠
となった集光レンズや色フィルタなどを用いて代用する
ことも可能である。なお、図３に示した多層構造の基板
１３に装着するＣＣＤチップ２に適用してもよい。この
ように構成された固体撮像装置においても、第１の実施
の形態と同様の効果が得られる。さらに、封止樹脂６が
ＣＣＤチップ２の有効画素領域１１へ流れ込むことを防
ぐことができ、固体撮像装置の信頼性の低下を防ぐこと
ができるとともに生産効率も向上する。The inflow prevention portion 19 may be concave due to the properties of the filling resin 6, and may be replaced with a condensing lens, a color filter, or the like, which has become indispensable for recent solid-state imaging devices. The present invention may be applied to the CCD chip 2 mounted on the multilayer substrate 13 shown in FIG. With the solid-state imaging device configured as described above, the same effects as those of the first embodiment can be obtained. Further, it is possible to prevent the sealing resin 6 from flowing into the effective pixel area 11 of the CCD chip 2, thereby preventing the reliability of the solid-state imaging device from being lowered and improving the production efficiency.
【００２２】なお、前記各実施の形態において、開口部
１０の加工方法，寸法，形状などは適宜変更可能であ
り、また固体撮像素子についてもＣＣＤチップ２に限る
ものではなく、その他の素子を用いてもよい。In each of the above-described embodiments, the processing method, dimensions, shape, and the like of the opening 10 can be changed as appropriate. The solid-state imaging device is not limited to the CCD chip 2, but other devices may be used. You may.
【００２３】[0023]
【発明の効果】この発明の固体撮像装置によると、基板
の開口部が、基板の固体撮像素子側から撮像レンズ側に
向けて拡開しているため、撮像レンズと固体撮像素子と
の距離が近い場合でも、撮像レンズの最外部を通る入射
光が基板にて遮断されることなく固体撮像素子の有効画
素領域に入射する。したがって、小型化、高性能化が図
れ、かつ固体撮像装置の周辺光量落ちが無くなり、その
撮像特性が向上する。また、封止樹脂にて固体撮像素子
を基板に固定する場合、封止樹脂の流れ込む面積が広く
なり、固体撮像装置の信頼性の向上が図れる。また、固
体撮像素子の有効画素領域の周囲に流入防御部を設ける
ことで、有効画素領域に封止樹脂が流入するのを防ぐこ
とができ、固体撮像装置の信頼性の低下を防ぐことがで
きるとともに生産効率も向上する。また、開口部の大き
さを段階的に変化させた多層構造の基板を用いること
で、基板の製造段階で開口部を拡開加工することがで
き、製造効率ならびに加工精度の向上が図れる。さら
に、固体撮像素子をリードにて基板に装着することで、
高度な加工技術を要することなく固体撮像装置を製造で
き、かつその厚みも小さくすることができ、機器の小型
化を図る点で非常に有用である。According to the solid-state imaging device of the present invention, since the opening of the substrate is expanded from the solid-state imaging device side of the substrate toward the imaging lens, the distance between the imaging lens and the solid-state imaging device is reduced. Even when the distance is close, the incident light passing through the outermost part of the imaging lens enters the effective pixel region of the solid-state imaging device without being blocked by the substrate. Therefore, miniaturization and high performance can be achieved, and the peripheral light amount of the solid-state imaging device does not decrease, and the imaging characteristics are improved. Further, when the solid-state imaging device is fixed to the substrate with the sealing resin, the area into which the sealing resin flows is increased, and the reliability of the solid-state imaging device can be improved. Further, by providing the inflow prevention portion around the effective pixel area of the solid-state imaging device, it is possible to prevent the sealing resin from flowing into the effective pixel area, and to prevent a decrease in the reliability of the solid-state imaging device. At the same time, production efficiency is improved. Further, by using a substrate having a multilayer structure in which the size of the opening is changed stepwise, the opening can be expanded at the stage of manufacturing the substrate, thereby improving the manufacturing efficiency and the processing accuracy. Furthermore, by mounting the solid-state image sensor to the substrate with leads,
The solid-state imaging device can be manufactured without requiring a high-level processing technique, and the thickness thereof can be reduced, which is very useful in reducing the size of the device.
【図１】この発明の第１の実施の形態における固体撮像
装置の構成図である。FIG. 1 is a configuration diagram of a solid-state imaging device according to a first embodiment of the present invention.
【図２】この発明の第１の実施の形態における固体撮像
装置の光学系に着目して説明するための構成図である。FIG. 2 is a configuration diagram for explaining focusing on an optical system of the solid-state imaging device according to the first embodiment of the present invention;
【図３】この発明の第２の実施の形態における固体撮像
装置の光学系に着目して説明するための構成図である。FIG. 3 is a configuration diagram for explaining focusing on an optical system of a solid-state imaging device according to a second embodiment of the present invention;
【図４】この発明の第３の実施の形態における固体撮像
装置の光学系に着目して説明するための構成図である。FIG. 4 is a configuration diagram for explaining focusing on an optical system of a solid-state imaging device according to a third embodiment of the present invention;
【図５】この発明の第４の実施の形態における固体撮像
装置の光学系に着目して説明するための構成図である。FIG. 5 is a configuration diagram for explaining focusing on an optical system of a solid-state imaging device according to a fourth embodiment of the present invention;
【図６】従来の固体撮像装置の構成図である。FIG. 6 is a configuration diagram of a conventional solid-state imaging device.
【図７】従来の固体撮像装置の光学系に着目して説明す
るための構成図である。FIG. 7 is a configuration diagram for explaining focusing on an optical system of a conventional solid-state imaging device.
１，１３ 基板 ２，１５ ＣＣＤチップ（固体撮像素子） ４ 撮像レンズ ６ 封止樹脂 １０ 開口部 １１ 有効画素領域 １８ リード １９ 流入防御部 DESCRIPTION OF SYMBOLS 1, 13 Substrate 2, 15 CCD chip (solid-state image sensor) 4 Imaging lens 6 Sealing resin 10 Opening 11 Effective pixel area 18 Lead 19 Inflow prevention part
フロントページの続き (72)発明者 藤井 栄造 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 (72)発明者 菅野 純一 大阪府門真市大字門真1006番地 松下電器 産業株式会社内Continued on the front page (72) Inventor Eizo Fujii 1006 Kadoma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35741097AJP3953614B2 (en) | 1997-12-25 | 1997-12-25 | Solid-state imaging device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35741097AJP3953614B2 (en) | 1997-12-25 | 1997-12-25 | Solid-state imaging device |
| Publication Number | Publication Date |
|---|---|
| JPH11191864Atrue JPH11191864A (en) | 1999-07-13 |
| JP3953614B2 JP3953614B2 (en) | 2007-08-08 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35741097AExpired - Fee RelatedJP3953614B2 (en) | 1997-12-25 | 1997-12-25 | Solid-state imaging device |
| Country | Link |
|---|---|
| JP (1) | JP3953614B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6977686B2 (en) | 2000-10-13 | 2005-12-20 | Renesas Technology Corp. | Solid-state image pickup apparatus limiting adhesive intrusion |
| US7110033B2 (en) | 2000-04-07 | 2006-09-19 | Mitsubishi Denki Kabushiki Kaisha | Imaging device having an imaging element mounted on a substrate |
| JP2006295714A (en)* | 2005-04-13 | 2006-10-26 | Olympus Corp | Imaging device |
| US7190404B2 (en) | 2000-06-16 | 2007-03-13 | Renesas Technology Corp. | Solid state imaging apparatus |
| JP2009044770A (en)* | 2003-05-19 | 2009-02-26 | Fujifilm Corp | Multilayer wiring board and imaging device |
| US8698269B2 (en) | 2011-02-28 | 2014-04-15 | Ibiden Co., Ltd. | Wiring board with built-in imaging device and method for manufacturing same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7110033B2 (en) | 2000-04-07 | 2006-09-19 | Mitsubishi Denki Kabushiki Kaisha | Imaging device having an imaging element mounted on a substrate |
| US7190404B2 (en) | 2000-06-16 | 2007-03-13 | Renesas Technology Corp. | Solid state imaging apparatus |
| US7633543B2 (en) | 2000-06-16 | 2009-12-15 | Renesas Technology Corp. | Solid state imaging apparatus |
| US6977686B2 (en) | 2000-10-13 | 2005-12-20 | Renesas Technology Corp. | Solid-state image pickup apparatus limiting adhesive intrusion |
| JP2009044770A (en)* | 2003-05-19 | 2009-02-26 | Fujifilm Corp | Multilayer wiring board and imaging device |
| JP2006295714A (en)* | 2005-04-13 | 2006-10-26 | Olympus Corp | Imaging device |
| US8698269B2 (en) | 2011-02-28 | 2014-04-15 | Ibiden Co., Ltd. | Wiring board with built-in imaging device and method for manufacturing same |
| Publication number | Publication date |
|---|---|
| JP3953614B2 (en) | 2007-08-08 |
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|---|---|---|
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