【０００１】[0001]
【発明の属する技術分野】本発明は、レーザー光を絞っ
て照射し情報を記録または再生する光情報記録媒体の製
造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical information recording medium for recording or reproducing information by focusing and irradiating a laser beam.
【０００２】[0002]
【従来の技術】光ディスク等の光情報記録媒体は、一般
に原盤からマスタ、マザー、スタンパを作製し、射出成
形によって大量に複製して製造される。原盤から直接ス
タンパを作製する場合もある。2. Description of the Related Art In general, an optical information recording medium such as an optical disk is manufactured by producing a master, a mother, and a stamper from a master and duplicating a large amount by injection molding. In some cases, a stamper is made directly from the master.
【０００３】光ディスク原盤は、一般に表面を研摩した
ガラス基板にフォトレジストを塗布し、これを記録すべ
き情報信号により強度変調したレーザー光を用いて感光
させ、現像してその感光度に対応した凹凸状の信号もし
くは溝または凹凸状の信号及び溝を形成して作製され
る。以下この凹凸状の信号もしくは溝または凹凸状の信
号及び溝を一括して信号ピットと呼ぶことにする。A master optical disc is generally coated with a photoresist on a glass substrate having a polished surface, exposed to light using a laser beam whose intensity is modulated by an information signal to be recorded, developed, and developed to have irregularities corresponding to the sensitivity. It is manufactured by forming a signal or groove in a shape or a signal and a groove in an uneven shape. Hereinafter, the uneven signal or groove or the uneven signal and groove will be collectively referred to as signal pits.
【０００４】図２に原盤の記録装置の一例のブロック図
を示す。焦点制御用のレーザー光学系や記録用レーザー
光学系のビーム拡大器等は省略してある。図２におい
て、１は記録用レーザー、２は光変調器、３はミラー、
４はレンズアクチュエーター、５はフォトレジストを塗
布したガラス板、６はスピンドルモーター、７は信号
源、８は記録イコライザである。FIG. 2 is a block diagram showing an example of a master recording apparatus. The laser optical system for focus control and the beam expander of the laser optical system for recording are omitted. In FIG. 2, 1 is a recording laser, 2 is an optical modulator, 3 is a mirror,
4 is a lens actuator, 5 is a glass plate coated with a photoresist, 6 is a spindle motor, 7 is a signal source, and 8 is a recording equalizer.
【０００５】信号源７で発生された信号は記録イコライ
ザ８によってパルス幅を一定量変化させられ、光変調器
２に入力され、レーザー光を強度変調する。その強度変
調されたレーザー光はミラー３を通り、レンズアクチュ
エーター４のフォーカス制御されるレンズを通じてガラ
ス板５上のフォトレジストを露光する。[0005] The signal generated by the signal source 7 has a pulse width changed by a fixed amount by a recording equalizer 8 and is input to the optical modulator 2 to modulate the intensity of the laser beam. The intensity-modulated laser light passes through the mirror 3 and exposes a photoresist on the glass plate 5 through a lens whose focus is controlled by a lens actuator 4.
【０００６】露光されたフォトレジストは、現像液によ
って溶解され信号ピットが形成される。フォトレジスト
では露光部分と未露光部分の現像液に対する溶解速度が
大きく異なる。ポジ型の場合は、ネガ型とは逆に未露光
部が溶解し露光部が残る。[0006] The exposed photoresist is dissolved by a developing solution to form signal pits. In a photoresist, the dissolution rates of an exposed portion and an unexposed portion in a developing solution are significantly different. In the case of the positive type, the unexposed portion dissolves and the exposed portion remains, contrary to the negative type.
【０００７】ネガ型フォトレジストの露光量と残膜率の
関係の一例を図３に示す。残膜率とは、現像前のフォト
レジスト厚さに対する現像後のフォトレジスト厚さ（残
膜量と云う）の比を云う。残膜率の曲線の傾きが急なほ
ど現像後のフォトレジストの露光部と未露光部の境界、
即ち、信号ピットの場合はピットのエッジが立ってく
る。露光量と残膜率の関係は、現像条件によって大きく
変化する。FIG. 3 shows an example of the relationship between the exposure amount of the negative photoresist and the residual film ratio. The residual film ratio refers to the ratio of the photoresist thickness after development (referred to as residual film amount) to the photoresist thickness before development. The steeper the slope of the residual film ratio curve, the boundary between the exposed and unexposed portions of the photoresist after development,
That is, in the case of a signal pit, the edge of the pit stands. The relationship between the exposure amount and the remaining film ratio greatly changes depending on the development conditions.
【０００８】[0008]
【発明が解決しようとする課題】信号ピットの部分とそ
の周囲の部分で露光量は連続的に変化しているため、フ
ォトレジストを用いる場合は現像の際の残膜量もピット
周辺で連続的に変化する。Since the amount of exposure changes continuously between the signal pit portion and the portion around the signal pit, when a photoresist is used, the residual film amount during development is also continuous around the pit. Changes to
【０００９】高密度な光情報媒体を製造する場合、小さ
な信号ピットを形成する必要がある。When manufacturing a high-density optical information medium, it is necessary to form small signal pits.
【００１０】記録用レーザー光の絞りスポットの大きさ
と比較して小さな信号ピットを記録しようとすると、図
４（ａ）に示したような正規の信号ピットにはならず、
図４（ｂ）に示したように、フォトレジストの底まで溶
解せず途中までで溶解が止まり、エッジの部分だけの信
号ピットになってしい、正規の信号ピットを形成するこ
とができない。図４において、９はフォトレジスト、１
０は基板、１１は正規の信号ピット、１２はエッジの部
分だけの信号ピットである。If an attempt is made to record a signal pit smaller than the size of the aperture spot of the recording laser beam, the signal pit does not become a regular signal pit as shown in FIG.
As shown in FIG. 4 (b), the dissolution does not reach the bottom of the photoresist but stops halfway, so that signal pits are formed only at the edge portions, so that regular signal pits cannot be formed. In FIG. 4, reference numeral 9 denotes a photoresist, 1
0 is a substrate, 11 is a normal signal pit, and 12 is a signal pit only at an edge portion.
【００１１】小さな信号ピットを形成するためには、記
録用レーザー光を小さく絞り込む以外に方法は無かっ
た。There has been no other method for forming small signal pits except for narrowing down the recording laser beam.
【００１２】記録用レーザー光の絞りスポットの大きさ
は、レーザー光の波長と絞り込むレンズの開口数で決ま
ってしまい、波長を開口数で割った値までしか原理的に
小さくできない。実際にはこの値より大きめのスポット
しか実現することはできない。開口数は限界に近い０．
９以上がすでに用いられており、絞りスポットを小さく
するためには波長を短くするしか手段はない。高密度光
ディスクの原盤記録には、従来用いられていた青色レー
ザーに代わって紫外線レーザーが用いられつつある。The size of the stop spot of the recording laser light is determined by the wavelength of the laser light and the numerical aperture of the lens to be stopped, and can be reduced in principle only to a value obtained by dividing the wavelength by the numerical aperture. In practice, only spots larger than this value can be realized. The numerical aperture is near the limit.
Nine or more are already used, and the only way to reduce the aperture spot is to shorten the wavelength. Ultraviolet lasers are being used for original recording of high-density optical disks instead of the blue lasers conventionally used.
【００１３】紫外線レーザーはそれ自体従来の青色レー
ザーより高価で安定性にも劣るだけでなく、紫外線を用
いることにより光学部品特に絞り込むレンズが非常に高
価になり原盤のコストが高くなることと、原盤製造の安
定性が低下するという欠点がある。[0013] The ultraviolet laser itself is more expensive and inferior in stability than the conventional blue laser itself. In addition, the use of ultraviolet light makes the optical parts, especially the lens to be focused, extremely expensive and increases the cost of the master. There is a disadvantage that the stability of production is reduced.
【００１４】本発明は、上記の問題点を解決し、量産性
に優れた高密度な情報媒体の製造方法を提供することを
目的としたものである。An object of the present invention is to solve the above problems and to provide a method for manufacturing a high-density information medium excellent in mass productivity.
【００１５】[0015]
【課題を解決するための手段】本発明は上記の目的を、
フォトレジストの代わりにカルコゲン化合物を用いるこ
とにより達成する。SUMMARY OF THE INVENTION The present invention provides the above object,
This is achieved by using a chalcogen compound instead of a photoresist.
【００１６】カルコゲン化合物の記録部分と未記録部分
の境界は、フォトレジストのように連続的に変化してい
るのではなく、不連続に記録部と未記録部が接してい
る。記録部分の大きさや形状は、記録条件のみによって
決まり、フォトレジストのように現像条件にはよらな
い。このため、エッチングによって記録部または未記録
部を除去すると、エッチング条件による大きさの変化の
ないエッジの立った信号ピットが形成できる。The boundary between the recorded part and the unrecorded part of the chalcogen compound does not change continuously like a photoresist, but the recorded part and the unrecorded part are in discontinuous contact. The size and shape of the recording portion are determined only by the recording conditions, and do not depend on the developing conditions like the photoresist. For this reason, when the recorded portion or the unrecorded portion is removed by etching, a signal pit having a sharp edge whose size does not change due to the etching condition can be formed.
【００１７】このため、カルコゲン化合物をフォトレジ
ストの代わりに使用すると、同じ大きさの記録光スポッ
トでも小さな信号ピットを記録できるので、高密度な情
報媒体を従来と同じ青色レーザーを用いて製造すること
ができる。Therefore, when a chalcogen compound is used in place of a photoresist, a small signal pit can be recorded even with a recording light spot having the same size. Therefore, a high-density information medium can be manufactured by using the same blue laser as before. Can be.
【００１８】[0018]
【発明の実施の形態】図１を用いて、本発明の光情報媒
体の製造方法の一例を説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS An example of a method for manufacturing an optical information medium according to the present invention will be described with reference to FIG.
【００１９】（ａ）ガラス等からなる基板１０の表面を
研磨・洗浄し、（ｂ）基板表面にカルコゲン薄膜１３を
形成する。（ｃ）カルコゲン薄膜にレーザー光等を絞り
込んで照射し、記録すべき信号に応じて部分的に結晶状
態を変化させ１４、（ｄ）結晶状態の差によるエッチレ
ート差を用いて結晶状態を変化させた部分を選択的にエ
ッチングして信号ピットを形成する。信号ピットを形成
した基板を原盤１５と呼ぶ。（ｅ）信号ピットを形成し
た上に導電膜１６を形成し、（ｆ）導電膜１６を電極に
して電鋳を行い数百μｍの厚さの金属層１７を形成す
る。（ｇ）導電膜と金属層からなる部分を基板から剥離
し、（ｈ）表面を洗浄してマスタースタンパー１８が作
られる。(A) The surface of a substrate 10 made of glass or the like is polished and washed, and (b) a chalcogen thin film 13 is formed on the substrate surface. (C) irradiating a chalcogen thin film with a laser beam or the like by squeezing it, and partially changing the crystal state according to a signal to be recorded14, (d) changing the crystal state using the etch rate difference due to the difference in the crystal state The etched portions are selectively etched to form signal pits. The substrate on which signal pits are formed is called master 15. (E) A conductive film 16 is formed on the signal pits, and (f) electroforming is performed using the conductive film 16 as an electrode to form a metal layer 17 having a thickness of several hundred μm. (G) The portion composed of the conductive film and the metal layer is peeled off from the substrate, and (h) the surface is washed to form the master stamper 18.
【００２０】このマスタースタンパー１８からマザーを
複製し、マザーからスタンパーを複製し、スタンパーか
ら射出成形によって複製することで光ディスク等の光情
報媒体を大量に製造することができる。The mother is duplicated from the master stamper 18, the stamper is duplicated from the mother, and the stamper is duplicated by injection molding, so that an optical information medium such as an optical disk can be mass-produced.
【００２１】基板としては、表面を研磨したガラス等を
用いる。この基板表面にカルコゲン化合物の薄膜を形成
する。カルコゲン薄膜は、通常真空中でスパッタリング
法や蒸着法で形成される。カルコゲンの微粉末を混合し
てペースト状にしたものを塗布して焼成する等の方法で
も形成できる。カルコゲン化合物としては、テルルやゲ
ルマニウムやアンチモンや錫などの化合物やそれらに酸
素や窒素などの入ったもの、または、カルコゲン元素の
酸化あるいは窒化あるいは酸化窒化物が用いられる。As the substrate, glass or the like whose surface is polished is used. A chalcogen compound thin film is formed on the substrate surface. The chalcogen thin film is usually formed by a sputtering method or an evaporation method in a vacuum. It can also be formed by a method in which a chalcogen fine powder is mixed to form a paste and applied and baked. Examples of the chalcogen compound include compounds such as tellurium, germanium, antimony, and tin, those containing oxygen, nitrogen, and the like, or oxidation, nitridation, or oxynitride of a chalcogen element.
【００２２】図５に原盤の記録装置の一例のブロック図
を示す。図２に示した原盤の記録装置と同一物には同一
の番号を付与してある。また、図２と同様に、焦点制御
用のレーザー光学系や記録用レーザー光学系のビーム拡
大器等は省略してある。FIG. 5 shows a block diagram of an example of the recording apparatus of the master. The same components as those of the recording apparatus of the master shown in FIG. 2 are given the same numbers. Further, similarly to FIG. 2, a beam expander of a laser optical system for focus control and a laser optical system for recording is omitted.
【００２３】信号源７で発生された記録すべき情報信号
は記録イコライザ１９によって信号パルス幅を変化され
るとともに、信号パルス内でパルス列に変調され、光変
調器２に入力され、レーザー光を強度変調する。その強
度変調されたレーザー光はミラー３を通り、レンズアク
チュエーター４のフォーカス制御されるレンズを通じて
ガラス板５上のカルコゲン化合物の薄膜に絞り込んで照
射され、カルコゲン化合物の結晶状態を部分的に変化さ
せる。２０はカルコゲン化合物の薄膜を形成したガラス
基板である。レーザー光の照射によって結晶状態が変化
した部分を記録部分、記録部分以外を未記録部分と呼ぶ
ことにする。The information signal to be recorded, generated by the signal source 7, is changed in signal pulse width by a recording equalizer 19, is modulated into a pulse train in the signal pulse, is input to the optical modulator 2, and changes the intensity of the laser light. Modulate. The intensity-modulated laser light passes through a mirror 3 and is focused on a thin film of a chalcogen compound on a glass plate 5 through a lens whose focus is controlled by a lens actuator 4 so as to be irradiated, thereby partially changing the crystal state of the chalcogen compound. Reference numeral 20 denotes a glass substrate on which a thin film of a chalcogen compound is formed. The portion where the crystal state changes due to the irradiation of the laser beam is called a recorded portion, and the portion other than the recorded portion is called an unrecorded portion.
【００２４】カルコゲン化合物の結晶状態は、照射され
たレーザー光のエネルギーによる熱によって変化させら
れる。一定以上の温度に達した部分の結晶状態は変化す
るが、レーザー光を照射されても一定温度に達っしなか
った部分の結晶状態は変化しない。一方、従来のフォト
レジストでは、照射されたレーザー光のエネルギー量に
よって現像液に対する溶解速度が変化する。The crystal state of the chalcogen compound is changed by heat due to the energy of the irradiated laser beam. The crystal state of a portion that has reached a certain temperature or higher changes, but the crystal state of a portion that has not reached a certain temperature even when irradiated with laser light does not change. On the other hand, in the conventional photoresist, the dissolution rate in the developing solution changes depending on the energy amount of the irradiated laser light.
【００２５】このため、カルコゲン化合物の記録部分と
未記録部分の境界は、フォトレジストのように連続的に
変化しているのではなく、不連続に記録部と未記録部が
接している。記録部分の大きさや形状は、記録条件のみ
によって決まり、フォトレジストのように現像条件には
よらない。For this reason, the boundary between the recorded portion and the unrecorded portion of the chalcogen compound does not change continuously like a photoresist, but the recorded portion and the unrecorded portion contact discontinuously. The size and shape of the recording portion are determined only by the recording conditions, and do not depend on the developing conditions like the photoresist.
【００２６】また、カルコゲン化合物はレーザー光の熱
によって記録されるので、同じ大きさの光スポットに対
して、フォトレジストを用いるより小さな信号ピットを
記録することができる。Further, since the chalcogen compound is recorded by the heat of the laser beam, it is possible to record smaller signal pits using a photoresist for a light spot of the same size.
【００２７】記録後、結晶状態の差によるエッチレート
差を用いて、エッチングによりカルコゲン化合物の特定
の結晶状態の部分、即ち記録部分または未記録部分を選
択的に除去することにより、エッチング条件による大き
さの変化のないエッジの立った信号ピットが形成でき
る。After recording, a portion having a specific crystal state of the chalcogen compound, that is, a recorded portion or an unrecorded portion is selectively removed by etching using an etch rate difference due to a difference in crystal state, so that a size depending on etching conditions is obtained. A signal pit with an edge that does not change in height can be formed.
【００２８】このように、カルコゲン化合物をフォトレ
ジストの代わりに使用すると、同じ大きさの記録光スポ
ットでも小さな信号ピットを記録できので、高密度な情
報媒体を高価で安定性に欠ける紫外線レーザーを用いる
ことなく、従来と同じ青色レーザーを用いて製造するこ
とができる。As described above, when a chalcogen compound is used in place of a photoresist, a small signal pit can be recorded even with a recording light spot of the same size. Therefore, a high-density information medium is expensive and an ultraviolet laser lacking stability is used. Instead, it can be manufactured using the same blue laser as before.
【００２９】カルコゲン化合物の薄膜は、スパッタリン
グ法や真空蒸着法で形成した場合には一般にアモルファ
ス状態になる。この状態でレーザー光を照射して記録す
ると、記録部分は結晶化し、未記録部分はアモルファス
状態のまま残る。When a thin film of a chalcogen compound is formed by a sputtering method or a vacuum evaporation method, it generally becomes an amorphous state. When recording is performed by irradiating a laser beam in this state, the recorded portion is crystallized, and the unrecorded portion remains in an amorphous state.
【００３０】カルコゲン化合物の薄膜の全面に光を照射
したり、熱処理したりして結晶化させた状態でレーザー
光を照射して記録すると、記録部分はアモルファス化
し、未記録部分は結晶状態のまま残すことができる。When recording is performed by irradiating the entire surface of the chalcogen compound thin film with laser light or irradiating with laser light in a crystallized state, the recorded portion becomes amorphous and the unrecorded portion remains in a crystalline state. Can be left.
【００３１】エッチングによりアモルファス状態の部分
を除去すると、記録部分がアモルファス状態の場合は記
録部分のみが除去されるのでネガ記録、未記録部分がア
モルファス状態の場合には記録部分のみが残るのでポジ
記録を行うことができる。When the amorphous portion is removed by etching, only the recorded portion is removed when the recorded portion is in the amorphous state, and negative recording is performed. When the unrecorded portion is in the amorphous state, only the recorded portion is left. It can be performed.
【００３２】エッチングにより結晶状態の部分を除去す
ると、記録部分がアモルファス状態の場合は記録部分の
みが残るのでポジ記録、未記録部分がアモルファス状態
の場合には記録部分のみが除去されるのでネガ記録を行
うことができる。When the crystalline portion is removed by etching, if the recorded portion is in the amorphous state, only the recorded portion remains, and if the unrecorded portion is in the amorphous state, only the recorded portion is removed. It can be performed.
【００３３】本発明の原盤記録装置では、記録イコライ
ザの部分が従来の原盤記録装置と大きく異なっている。
本発明の原盤記録装置では熱記録を行うため、パルス幅
をパルス間隔に応じて長さを変化させたり、パルス内で
パルス列に変調したりする。In the master recording apparatus of the present invention, a recording equalizer is greatly different from a conventional master recording apparatus.
In the master recording apparatus of the present invention, in order to perform thermal recording, the pulse width is changed in length according to the pulse interval, or modulated into a pulse train within the pulse.
【００３４】高密度な熱記録を行うためには、記録信号
の長さや、前後の記録信号までの間隔や前後の記録信号
の長さに応じて記録信号パルスの長さや記録のタイミン
グを調整する必要がある。例えば、記録パルスの直前に
長い記録パルスがあれば記録パルスの先頭を遅らせた
り、直前が長い無信号区間であれば記録パルスの先頭を
早めたりする。また、一つの記録パルス内で信号ピット
の幅を一定に保つため、信号パルスの先頭と終端は長め
のパルスにし、信号パルスの中間は短いパルスの列にす
るといった複雑な操作を記録イコライザが行う。In order to perform high-density thermal recording, the length of a recording signal pulse and the timing of recording are adjusted according to the length of a recording signal, the interval between preceding and succeeding recording signals, and the length of the preceding and succeeding recording signals. There is a need. For example, if there is a long recording pulse immediately before the recording pulse, the head of the recording pulse is delayed, or if immediately before the recording pulse, the head of the recording pulse is advanced. In addition, in order to keep the width of the signal pit constant within one recording pulse, the recording equalizer performs a complicated operation such as forming a longer pulse at the beginning and the end of the signal pulse, and forming a train of short pulses at the middle of the signal pulse. .
【００３５】レーザー光の照射によって結晶化させる場
合は、徐冷されるような照射方法が用いられ、アモルフ
ァス化させる場合は、急冷されるような照射方法が用い
られる。例えば、徐冷されるような照射方法としては、
結晶化させたい部分の前後に中程度のパワーの光を照射
しておいてカルコゲン化合物の膜の温度を少し上昇させ
ておくことで、強いパワーを照射した部分から熱が逃げ
難いようにする方法がある。また、急冷させるような照
射方法としては、強いパワーを照射した直後に照射パワ
ーを一旦ゼロにまで下げる方法がある。In the case of crystallization by laser light irradiation, an irradiation method of slow cooling is used, and in the case of amorphousization, an irradiation method of rapid cooling is used. For example, irradiation methods such as slow cooling include:
A method of irradiating medium-power light before and after the part to be crystallized and slightly raising the temperature of the chalcogen compound film so that heat does not escape from the part irradiated with strong power. There is. Further, as an irradiation method such as rapid cooling, there is a method in which the irradiation power is temporarily reduced to zero immediately after the irradiation with the strong power.
【００３６】記録したカルコゲン化合物の薄膜のエッチ
ング方法としては、ドライエッチング法やウエットエッ
チング法を用いることができる。As a method for etching the recorded chalcogen compound thin film, a dry etching method or a wet etching method can be used.
【００３７】ドライエッチング法は、アルゴン等の不活
性ガスと塩素系またはフッ素系もしくは塩素系とフッ素
系の混合ガス等の反応性ガスの混合ガスを用い、真空中
でＤＣ放電またはＲＦ放電またはイオンビーム等の方法
で記録したカルコゲン化合物の薄膜のエッチングを行
う。The dry etching method uses a mixed gas of an inert gas such as argon and a reactive gas such as a chlorine-based gas or a fluorine-based gas or a mixed gas of a chlorine-based and fluorine-based gas, and performs DC discharge or RF discharge or ion discharge in a vacuum. The thin film of the chalcogen compound recorded by a method such as a beam is etched.
【００３８】カルコゲン薄膜の組成に応じてガスの組成
や放電条件等を変化させることで、アモルファス状態の
部分を選択的にエッチングすることができる。By changing the composition of the gas, the discharge conditions, and the like according to the composition of the chalcogen thin film, the amorphous portion can be selectively etched.
【００３９】ウエットエッチング法は、硝酸や硝酸と塩
酸の混合物等の強酸、もしくは、前記の強酸にリン酸や
蟻酸等の弱酸をバッファ剤として加えた液、もしくは、
前記の強酸に過酸化水素等の酸化剤を加えた液、もしく
は、前記の強酸に前記のバッファ剤と前記の酸化剤を加
えた液をエッチング液として用い、エッチング液中に記
録したカルコゲン化合物の薄膜を浸してエッチングを行
う。In the wet etching method, a strong acid such as nitric acid or a mixture of nitric acid and hydrochloric acid, or a solution obtained by adding a weak acid such as phosphoric acid or formic acid to the strong acid as a buffering agent, or
A solution in which an oxidizing agent such as hydrogen peroxide is added to the strong acid, or a solution in which the buffering agent and the oxidizing agent are added to the strong acid is used as an etching solution, and a chalcogen compound recorded in the etching solution is used. Etching is performed by immersing the thin film.
【００４０】カルコゲン薄膜の組成に応じてエッチング
液の組成を変えたり、エッチング液の温度を上げたりす
ることで、アモルファス状態の部分、もしくは、結晶状
態の部分を選択的にエッチングすることができる。By changing the composition of the etching solution or increasing the temperature of the etching solution in accordance with the composition of the chalcogen thin film, an amorphous portion or a crystalline portion can be selectively etched.
【００４１】本発明の光情報記録媒体の製造方法は、従
来のフォトレジストを用いた方法では紫外線レーザーを
用いても記録できないような超高密度な光情報媒体の製
造にも用いることができる。The method for manufacturing an optical information recording medium of the present invention can be used for manufacturing an ultra-high density optical information medium which cannot be recorded even by using an ultraviolet laser with a method using a conventional photoresist.
【００４２】[0042]
【発明の効果】本発明の光情報媒体の製造方法は、基板
上に形成されたカルコゲン化合物の結晶状態の差による
エッチレート差を用いて、カルコゲン化合物の特定の結
晶状態の部分を選択的に除去することを特徴とする。According to the method for manufacturing an optical information medium of the present invention, a portion of a specific crystal state of a chalcogen compound is selectively used by using an etch rate difference caused by a difference in crystal state of a chalcogen compound formed on a substrate. It is characterized by being removed.
【００４３】カルコゲン化合物はレーザー光の熱によっ
て記録されるので、同じ大きさの光スポットに対して、
フォトレジストを用いるより小さな信号ピットを記録す
ることができる。Since a chalcogen compound is recorded by the heat of a laser beam, a light spot of the same size
Smaller signal pits can be recorded than with photoresist.
【００４４】このように、本発明の光情報媒体の製造方
法によれば、原盤記録に短い波長の光源を用いなくとも
高密度な情報媒体を供給することができる。As described above, according to the method for manufacturing an optical information medium of the present invention, a high-density information medium can be supplied without using a light source having a short wavelength for recording a master.
【図１】本発明の光情報媒体の製造工程の一例を説明す
る図FIG. 1 is a diagram illustrating an example of a manufacturing process of an optical information medium of the present invention.
【図２】従来の原盤の記録装置の一例のブロック図FIG. 2 is a block diagram of an example of a conventional master recording apparatus.
【図３】ネガ型レジストの露光量と残膜率の関係の一例
を示す図FIG. 3 is a diagram showing an example of the relationship between the exposure amount of a negative resist and the remaining film ratio.
【図４】信号ピットの一例を示す断面図FIG. 4 is a sectional view showing an example of a signal pit.
【図５】本発明の原盤の記録装置の一例のブロック図FIG. 5 is a block diagram of an example of a master recording apparatus according to the present invention.
１ 記録用レーザー ２ 光変調器 ３ ミラー ４ レンズアクチュエーター ５ フォトレジストを塗布したガラス板 ６ スピンドルモーター ７ 信号源 ８ 記録イコライザ ９ フォトレジスト １０ 基板 １１ 正規の信号ピット １２ エッジの部分だけの信号ピット １３ カルコゲン薄膜 １４ 結晶状態の変化した部分 １５ 原盤 １６ 導電膜 １７ 金属層 １８ マスタースタンパー １９ 記録イコライザ ２０ カルコゲン化合物の薄膜を形成したガラス基板 DESCRIPTION OF SYMBOLS 1 Recording laser 2 Optical modulator 3 Mirror 4 Lens actuator 5 Glass plate coated with photoresist 6 Spindle motor 7 Signal source 8 Recording equalizer 9 Photoresist 10 Substrate 11 Regular signal pit 12 Signal pit only at edge 13 Chalcogen Thin film 14 Crystal-changed portion 15 Master 16 Conductive film 17 Metal layer 18 Master stamper 19 Recording equalizer 20 Glass substrate on which thin film of chalcogen compound is formed
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8249493AJPH1097738A (en) | 1996-09-20 | 1996-09-20 | Method and apparatus for manufacturing optical information recording medium |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8249493AJPH1097738A (en) | 1996-09-20 | 1996-09-20 | Method and apparatus for manufacturing optical information recording medium |
| Publication Number | Publication Date |
|---|---|
| JPH1097738Atrue JPH1097738A (en) | 1998-04-14 |
| JPH1097738A5 JPH1097738A5 (en) | 2004-08-19 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8249493APendingJPH1097738A (en) | 1996-09-20 | 1996-09-20 | Method and apparatus for manufacturing optical information recording medium |
| Country | Link |
|---|---|
| JP (1) | JPH1097738A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005056223A1 (en) | 2003-12-09 | 2005-06-23 | Ricoh Company, Ltd. | Structure body and method of producing the structure body, medium for forming structure body, and optical recording medium and method of reproducing the optical recording medium |
| WO2005101398A1 (en)* | 2004-04-15 | 2005-10-27 | Koninklijke Philips Electronics N.V. | Optical master substrate with mask layer and method to manufacture high-density relief structure |
| WO2005112024A1 (en)* | 2004-05-18 | 2005-11-24 | Ricoh Company, Ltd. | Process for producing stamper of multi-valued rom disc, apparatus for producing the same, and resulting disc |
| JP2006062101A (en)* | 2004-08-24 | 2006-03-09 | Samsung Electronics Co Ltd | Pattern forming material, pattern forming method, and optical disc |
| WO2006043212A1 (en)* | 2004-10-19 | 2006-04-27 | Koninklijke Philips Electronics N.V. | Master substrate and method of manufacturing a high-density relief structure |
| KR100640002B1 (en) | 2005-09-06 | 2006-11-01 | 한국전자통신연구원 | Thin film patterning method of phase change material and manufacturing method of phase change memory device using same |
| KR100667771B1 (en)* | 2004-11-10 | 2007-01-11 | 삼성전자주식회사 | Record master for producing information storage media and its manufacturing method |
| EP1482494A3 (en)* | 2003-05-28 | 2007-08-29 | Matsushita Electric Industrial Co., Ltd. | Method for producing master for optical information recording media |
| JP2008198339A (en)* | 2007-02-08 | 2008-08-28 | Commissariat A L'energie Atomique | Formation method of deep pit region and manufacturing method of optical recording medium using same |
| JP2009048687A (en)* | 2007-08-16 | 2009-03-05 | Fujifilm Corp | Manufacturing method of information recording medium for optical reading |
| JP2009059470A (en)* | 2008-12-15 | 2009-03-19 | Sony Corp | Manufacturing method of recording medium, and manufacturing method of master disk for manufacturing recording medium |
| JP2009110652A (en)* | 2008-12-15 | 2009-05-21 | Sony Corp | Recording medium manufacturing apparatus, and recording medium master disk manufacturing device |
| JP2009147334A (en)* | 2007-12-17 | 2009-07-02 | Asml Holding Nv | Lithographic method and apparatus |
| JP2009245504A (en)* | 2008-03-31 | 2009-10-22 | Pioneer Electronic Corp | Master disk for manufacturing optical information recording medium |
| US7713678B2 (en) | 2005-05-30 | 2010-05-11 | Pioneer Corporation | Resist material and electron beam recording resist material |
| US20120128917A1 (en)* | 2003-12-01 | 2012-05-24 | Sony Corporation | Manufacturing method of master disc for optical disc, and master disc for optical disc |
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| US8529782B1 (en) | 2007-02-20 | 2013-09-10 | Seiko Epson Corporation | Microstructure manufacturing method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1482494A3 (en)* | 2003-05-28 | 2007-08-29 | Matsushita Electric Industrial Co., Ltd. | Method for producing master for optical information recording media |
| US20120128917A1 (en)* | 2003-12-01 | 2012-05-24 | Sony Corporation | Manufacturing method of master disc for optical disc, and master disc for optical disc |
| WO2005056223A1 (en) | 2003-12-09 | 2005-06-23 | Ricoh Company, Ltd. | Structure body and method of producing the structure body, medium for forming structure body, and optical recording medium and method of reproducing the optical recording medium |
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| WO2005101398A1 (en)* | 2004-04-15 | 2005-10-27 | Koninklijke Philips Electronics N.V. | Optical master substrate with mask layer and method to manufacture high-density relief structure |
| JP2007533064A (en)* | 2004-04-15 | 2007-11-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Optical master substrate having mask layer and method for manufacturing high-density relief structure |
| WO2005112024A1 (en)* | 2004-05-18 | 2005-11-24 | Ricoh Company, Ltd. | Process for producing stamper of multi-valued rom disc, apparatus for producing the same, and resulting disc |
| US7990838B2 (en) | 2004-05-18 | 2011-08-02 | Ricoh Company, Ltd. | Process for producing stamper of multi-valued ROM disc, apparatus for producing the same, and resulting disc |
| JP2006062101A (en)* | 2004-08-24 | 2006-03-09 | Samsung Electronics Co Ltd | Pattern forming material, pattern forming method, and optical disc |
| WO2006043212A1 (en)* | 2004-10-19 | 2006-04-27 | Koninklijke Philips Electronics N.V. | Master substrate and method of manufacturing a high-density relief structure |
| KR100667771B1 (en)* | 2004-11-10 | 2007-01-11 | 삼성전자주식회사 | Record master for producing information storage media and its manufacturing method |
| US7713678B2 (en) | 2005-05-30 | 2010-05-11 | Pioneer Corporation | Resist material and electron beam recording resist material |
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| JP2008198339A (en)* | 2007-02-08 | 2008-08-28 | Commissariat A L'energie Atomique | Formation method of deep pit region and manufacturing method of optical recording medium using same |
| US8529782B1 (en) | 2007-02-20 | 2013-09-10 | Seiko Epson Corporation | Microstructure manufacturing method |
| JP2009048687A (en)* | 2007-08-16 | 2009-03-05 | Fujifilm Corp | Manufacturing method of information recording medium for optical reading |
| JP2009147334A (en)* | 2007-12-17 | 2009-07-02 | Asml Holding Nv | Lithographic method and apparatus |
| US8339571B2 (en) | 2007-12-17 | 2012-12-25 | Asml Netherlands B.V. | Lithographic method and apparatus |
| JP2009245504A (en)* | 2008-03-31 | 2009-10-22 | Pioneer Electronic Corp | Master disk for manufacturing optical information recording medium |
| JP2013033291A (en)* | 2008-10-14 | 2013-02-14 | Asahi Kasei Corp | Heat-reactive resist material, laminate for thermal lithography using the same, and method for manufacturing mold using the material and the laminate |
| JP2009110652A (en)* | 2008-12-15 | 2009-05-21 | Sony Corp | Recording medium manufacturing apparatus, and recording medium master disk manufacturing device |
| JP2009059470A (en)* | 2008-12-15 | 2009-03-19 | Sony Corp | Manufacturing method of recording medium, and manufacturing method of master disk for manufacturing recording medium |
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