【０００１】[0001]
【発明の属する技術分野】本発明は、例えば半導体素
子、または液晶表示素子等をフォトリソグラフィ工程で
製造する際に使用される投影光学系に関し、特に光学系
の要素として屈折系のほかに反射系を用いることによ
り、紫外線波長域でクオーターミクロン単位の解像度を
有する反射屈折投影光学系に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a projection optical system used for manufacturing, for example, a semiconductor device or a liquid crystal display device by a photolithography process, and more particularly to a reflection system in addition to a refraction system as an optical system element. The present invention relates to a catadioptric projection optical system having a resolution of a quarter micron unit in the ultraviolet wavelength region.
【０００２】[0002]
【従来の技術】半導体素子等を製造するためのフォトグ
ラフィ工程において、フォトマスクまたはレチクル（以
下、まとめて「レチクル」という）のパターン像を投影
光学系を介して、フォトレジスト等が塗布されたウエハ
（またはガラスプレート等）上に露光する投影露光装置
が使用されている。半導体素子等の集積度が向上するに
つれて、投影露光装置に使用されている投影光学系に要
求される解像力は益々高まっている。この要求を満足す
るために、照明光の波長を短く且つ投影光学系の開口数
（Ｎ．Ａ．）を大きくする必要が生じた。しかし、照明
光の波長が短くなると、光の吸収によって実用に耐える
硝材の種類は限られ、波長が３００ｎｍ以下になると実
用上使える硝材は合成石英と蛍石だけとなる。両者のア
ッベ数は、色収差を補正するのに十分な程は離れていな
いので、波長が３００ｎｍ以下になった場合には、屈折
系だけで投影光学系を構成すると、色収差をはじめとす
る諸収差の補正が困難となる。2. Description of the Related Art In a photolithography process for manufacturing a semiconductor device or the like, a photoresist or the like is applied via a projection optical system to a pattern image of a photomask or a reticle (hereinafter collectively referred to as a "reticle"). A projection exposure apparatus for exposing a wafer (or a glass plate or the like) is used. As the degree of integration of semiconductor elements and the like increases, the resolution required for a projection optical system used in a projection exposure apparatus has been increasing. In order to satisfy this requirement, it has been necessary to shorten the wavelength of the illumination light and increase the numerical aperture (NA) of the projection optical system. However, when the wavelength of the illumination light is shortened, the types of glass materials that can withstand practical use by absorbing light are limited, and when the wavelength is 300 nm or less, only synthetic quartz and fluorite are practically usable. Since the Abbe numbers of both are not far enough apart to correct the chromatic aberration, if the wavelength becomes 300 nm or less, if the projection optical system is constituted only by the refraction system, various aberrations including the chromatic aberration Correction becomes difficult.
【０００３】これに対して反射系は色収差がないため、
反射系と屈折系とを組み合わせたいわゆる反射屈折光学
系によって投影光学系を構成した種々の技術が提案され
ている。その中で、光学系の途中で１回中間像を形成す
るタイプとしては、特開昭６３−１６３３１９号公報、
特公平７−１１１５１２号公報、特公平５−２５１７０
号公報、ＵＳＰ−４，７７９，９６６等に開示されてい
る。On the other hand, since the reflection system has no chromatic aberration,
Various techniques have been proposed in which a projection optical system is configured by a so-called catadioptric system combining a reflection system and a refraction system. Among them, a type in which an intermediate image is formed once in the middle of an optical system is disclosed in JP-A-63-163319.
Japanese Patent Publication No. 7-111512, Japanese Patent Publication No. 5-25170
And US Pat. No. 4,779,966.
【０００４】[0004]
【発明が解決しようとする課題】上記の如き従来の技術
のうちで、光軸上の光線を含む露光領域を用いる反射屈
折光学系では、光路分割のために透過反射面を待ったビ
ームスプリッターを使う必要がある。このような光学系
ではウエハ面からの反射光による内面反射や、ビームス
プリッター以降の光学系の屈折面での内面反射、ビーム
スプリッターの透過反射面等において、フレアーや照明
ムラの原因となる迷光が発生し易い。また開口数を大き
くすると大型のビームスプリッターが必要となり、光量
ロスによる露光時間の長大化は半導体製造工程における
スループットの低下を招く。さらに特開平６−３００９
７３号公報等にも開示されているように、光量ロスを防
ぐために偏光ビームスプリッターの採用が必要となる
が、大型の偏光ビームスプリッターを製造することは極
めて難しく、透過反射膜の不均一性、角度特性、吸収、
位相変化などが結像特性を劣化させるという不都合があ
った。Among the conventional techniques as described above, a catadioptric system using an exposure area including a light ray on an optical axis uses a beam splitter which waits for a transmission / reflection surface to split an optical path. There is a need. In such an optical system, stray light that causes flare and uneven illumination occurs on the internal reflection due to the reflected light from the wafer surface, the internal reflection on the refraction surface of the optical system after the beam splitter, and the transmission / reflection surface of the beam splitter. Easy to occur. In addition, when the numerical aperture is increased, a large beam splitter is required, and an increase in exposure time due to a loss of light amount causes a decrease in throughput in a semiconductor manufacturing process. Further, Japanese Unexamined Patent Publication No.
As disclosed in Japanese Unexamined Patent Publication No. 73, 73, etc., it is necessary to employ a polarizing beam splitter in order to prevent loss of light amount, but it is extremely difficult to manufacture a large polarizing beam splitter, Angle characteristics, absorption,
There is an inconvenience that a phase change deteriorates the imaging characteristics.
【０００５】一方、リング視野光学系は、物体と結像面
を同時に走査し大きな露光領域を得る走査型露光方式を
採用し、また中間像を作ってその付近に光路偏向部材を
配置することで、ビームスプリッターを用いなくとも光
路分割が実現できる。しかしこの中間像を複数回作ろう
とすると、光学系の光路長が長くなってしまう。また凹
面鏡を複数枚使用すると、光路分割のために露光領域を
光軸から大きく離す必要を生じ、光学系の大型化は避け
られない。以上から実用的には中間像、凹面鏡をそれぞ
れ１つ持つ光学系が望ましい。従来開示されている光学
系のうち中間像、凹面鏡をそれぞれ１つ持つ光学系に限
定してみると、特公平７ー１１１５１２号公報とＵＳＰ
−４，７７９，９６６が挙げられる。しかしこれらの従
来技術も、大きな露光領域を持ちクオーターミクロン単
位の解像度を有する光学系の実用化には問題がある。On the other hand, the ring field optical system employs a scanning exposure method in which an object and an image forming surface are simultaneously scanned to obtain a large exposure area, and an intermediate image is formed and an optical path deflecting member is disposed near the intermediate image. Optical path division can be realized without using a beam splitter. However, if this intermediate image is to be produced a plurality of times, the optical path length of the optical system will be long. Further, when a plurality of concave mirrors are used, it becomes necessary to largely separate the exposure region from the optical axis for dividing the optical path, and it is inevitable that the optical system becomes large. From the above, practically, an optical system having one intermediate image and one concave mirror is desirable. If the conventional optical system is limited to an optical system having one intermediate image and one concave mirror, Japanese Patent Publication No. 7-111512 and US Pat.
-4,779,966. However, these conventional techniques also have a problem in the practical use of an optical system having a large exposure area and a resolution on the order of quarter microns.
【０００６】まずＵＳＰ−４，７７９，９６６において
は、反射光学系を中間像よりも第２面よりの縮小側に採
用している。しかし縮小側は第１面倒に比べてＮＡが大
きいため、光路分割が困難で光学系のＮＡを大きくする
ことができず、十分な解像力を持つことができない。ま
た凹面鏡の大型化も避けられない。特公平７−１１１５
１２号公報においては、中間像を形成するための凹面鏡
を含む第１結像光学系が完全対称型の光学系で構成され
ており、中間像は第１面の等倍像となっている。これに
より第１結像光学系の収差発生を軽減させているが、第
２結像光学系が全系の倍率を一手に受け持つこととな
り、第２結像光学系にかかる負担が重くなる。特に光学
系に大きなＮＡが要求されると、第２結像光学系の大型
化、複雑化は避けられない。更に中間像が第１面付近に
形成されるため、偏光ビームスプリッター等の光路偏向
部材を用いないと、第１面付近でのワーキングディスタ
ンスを十分にとることが出来ない。First, in US Pat. No. 4,779,966, a reflection optical system is employed on the reduction side of the second surface from the intermediate image. However, since the NA on the reduction side is larger than that of the first lens, it is difficult to divide the optical path, so that the NA of the optical system cannot be increased, and a sufficient resolution cannot be obtained. In addition, enlargement of the concave mirror is inevitable. Tokuhei 7-1115
In Japanese Patent Laid-Open No. 12, the first imaging optical system including a concave mirror for forming an intermediate image is constituted by a completely symmetrical optical system, and the intermediate image is an equal-magnification image of the first surface. Although the occurrence of aberration of the first imaging optical system is reduced by this, the second imaging optical system handles the magnification of the entire system at once, and the burden on the second imaging optical system is increased. In particular, when a large NA is required for the optical system, the size and complexity of the second imaging optical system cannot be avoided. Further, since an intermediate image is formed near the first surface, a working distance near the first surface cannot be sufficiently obtained unless an optical path deflecting member such as a polarizing beam splitter is used.
【０００７】本発明はかかる点に鑑み、紫外線波長域で
大きな開口数を達成し、光学系が実用的な大きさで、像
側の作動距離も十分確保し、クオーターミクロン単位の
解像度を有する反射屈折投影光学系を提供することを課
題とする。In view of the foregoing, the present invention achieves a large numerical aperture in the ultraviolet wavelength range, a practical size optical system, a sufficient working distance on the image side, and a reflection having a resolution of the quarter micron unit. It is an object to provide a refractive projection optical system.
【０００８】[0008]
【課題を解決するための手段】上述の課題を達成するた
めに、本発明による反射屈折投影光学系は、レンズと凹
面鏡とを含み、第１面のパターンのうちの露光領域の像
を縮小倍率にて第２面に結像させ、第１面と第２面とを
互いに縮小倍率に対応した速度比にて同期して走査する
ことにより、第１面のパターンのすべての像を第２面に
投影する反射屈折投影光学系において、露光領域は、投
影光学系の有効領域のうち、走査方向と直交する直径に
よって２分される一方の半円領域内にあり、第１面から
光線が通る順に、第１面の中間像を形成し凹面鏡を有す
る第１結像光学系と、中間像の近傍に配置した第１の平
面鏡と、中間像の再結像を第２面上に形成する第２結像
光学系とから構成され、第２結像光学系は、蛍石によっ
て形成した負レンズを少なくとも１枚含むように構成し
ている。In order to achieve the above object, a catadioptric projection optical system according to the present invention includes a lens and a concave mirror, and reduces an image of an exposure area of a pattern on a first surface by a reduction magnification. To form an image on the second surface, and scan the first surface and the second surface in synchronization with each other at a speed ratio corresponding to the reduction magnification, so that all the images of the pattern on the first surface are on the second surface. In the catadioptric projection optical system, the exposure area is within one semicircular area of the effective area of the projection optical system, which is divided into two by a diameter perpendicular to the scanning direction, and a light beam passes from the first surface. In order, a first imaging optical system that forms an intermediate image of the first surface and has a concave mirror, a first plane mirror arranged near the intermediate image, and a second image that forms a re-image of the intermediate image on the second surface. A second imaging optical system, and the second imaging optical system has a negative lens formed of fluorite. And configured to include at least one of.
【０００９】上述の構成の如き本発明においては、第２
結像光学系に蛍石によって形成した負レンズＬCaを少な
くとも１枚配置することで、倍率色収差および各波長ご
とのコマ収差（色コマ収差）のばらつきを良好に補正す
ることができる。また中間像付近に第１の平面鏡Ｍ1を
用いることで、光路の分離がしやすくなり、光学系の大
型化も防ぐことができる。その際、反射屈折投影光学系
を構成する各レンズを、それぞれ合成石英と蛍石とのい
ずれかによって形成することで、露光波長を３００ｎｍ
以下にしても十分に透過率を確保することが可能とな
り、クオーターミクロン単位の解像度を実現できる。In the present invention as described above, the second aspect
By disposing at least one negative lensLCa formed of fluorite in the imaging optical system, it is possible to favorably correct lateral chromatic aberration and variation in coma (chromatic coma) for each wavelength. Further, by using the first plane mirror M1 in the vicinity of the intermediate image, separation of the light paths is easily, it can also be prevented enlargement of the optical system. At this time, by forming each lens constituting the catadioptric projection optical system by using either synthetic quartz or fluorite, the exposure wavelength is set to 300 nm.
Even below, the transmittance can be sufficiently ensured, and a resolution of a quarter micron unit can be realized.
【００１０】また第１結像光学系を、第１レンズ群
Ｇ1、第２レンズ群Ｇ2及び凹面鏡ＭCから構成し、第１
面からの光が、第１レンズ群Ｇ1と第２レンズ詳Ｇ2とを
その順に通り、凹面鏡ＭCによって反射され、第２レン
ズ群Ｇ2を往路とは逆向きに通り、第１の平面鏡Ｍ1によ
って反射されることが好ましい。さらに第１レンズ群Ｇ
1は、少なくとも３つの異なる屈折力を持つ屈折部材か
ら構成されることが好ましい。近時、光学系に解像力が
求められるにつれて、歪曲収差の補正や像面湾曲の補正
にも厳しいスペックが要求されている。この達成のため
には、製造時及び製造後の調整が必要となるが、調整用
のレンズは第１面近傍のレンズが有効である。すなわち
第２レンズ群Ｇ2は往復兼用光学系であるため、調整用
のレンズとしては不向きといえる。従って、第１レンズ
群Ｇ1を、少なくとも３つの異なる屈折力を持つレンズ
で構成することにより、歪曲収差や像面湾曲の製造時の
調整が可能となる。[0010] The first imaging optical system, the first lens group G1, and consists of the second lens group G2 and the concave mirror MC, first
Light from the surface is, as the first lens group G1 and the second lens more G2 in that order, is reflected by the concave mirror MC, the second lens group G2 passes in the opposite direction to the forward path, the first it is preferably reflected by the plane mirror M1. Further, the first lens group G
Preferably,1 comprises at least three refractive members having different refractive powers. Recently, as the resolution of the optical system is required, strict specifications are required for the correction of distortion and the correction of field curvature. In order to achieve this, it is necessary to make adjustments at the time of manufacturing and after manufacturing, but a lens near the first surface is effective as an adjusting lens. That is, since the second lens group G2 is reciprocally combined optical system, it can be said that not suitable as a lens for adjustment. Accordingly, the first lens group G1, by constituting a lens having at least three different refractive power, it is possible to adjust the time of manufacture of the distortion and field curvature.
【００１１】また、第２結像光学系に可変開口絞りＡＳ
を設けることで、露光パターンに最適となるように解像
力と焦点深度を調節することができる。更にこの可変開
口絞りＡＳと第２面との間に、蛍石によって形成した負
レンズＬCaを少なくとも１枚設けることで、倍率色収差
および各波長ごとのコマ収差のばらつきを良好に補正す
ることができる。A variable aperture stop AS is provided in the second imaging optical system.
Is provided, the resolution and the depth of focus can be adjusted to be optimal for the exposure pattern. Further, by providing at least one negative lensLCa made of fluorite between the variable aperture stop AS and the second surface, it is possible to satisfactorily correct lateral chromatic aberration and variation in coma aberration for each wavelength. it can.
【００１２】また第２結像光学系を、第１の平面鏡Ｍ1
側から順に、正の屈折力を持つ第３レンズ群Ｇ3、第２
の平面鏡Ｍ2、第４レンズ群Ｇ4、可変開口絞りＡＳ、及
び第５レンズ群Ｇ5から構成することで、開口数を大き
くしても良好に収差を補正し、第２結像光学系が大きく
なるのを防ぐこともできる。更に中間像と第２結像光学
系の可変開口絞りＡＳとの間に、光の通る順に、中間像
側により強い凸面を向けた正レンズＬpと、中間像側に
より強い凹面を向けた負レンズＬnを隣接して配置する
ことにより、コマ収差を良好に補正することができる。The second imaging optical system is provided with a first plane mirror M1.
In order from the side, a third lens group G3 having a positive refractive power,
Plane mirror M2, the fourth lens group G4 of, by constituting a variable aperture stop AS, and the fifth lens group G5, even by increasing the numerical aperture corrected satisfactorily aberration, the second imaging optical system Can be prevented from becoming large. Furthermore between the variable aperture stop AS of the intermediate image and the second image-forming optical system, negative in the order through the light, toward a positive lens Lp having a stronger convex surface toward the intermediate image, a strong concave surface on the intermediate image the lens Ln by arranging adjacent to each other, it is possible to excellently correct coma.
【００１３】[0013]
【発明の実施の形態】本発明の実施の形態を図面によっ
て説明する。図１は本発明による反射屈折投影光学系の
一実施例を示し、この投影光学系は、レチクルＲ上のパ
ターンのうちの露光領域Ａの像を縮小倍率にてウエハＷ
上に結像させ、レチクルＲとウエハＷとを互いに縮小倍
率に対応した速度比にて同期して走査することにより、
レチクルＲ上のパターンのすべての像をウエハＷに投影
する光学系である。Embodiments of the present invention will be described with reference to the drawings. FIG. 1 shows an embodiment of a catadioptric projection optical system according to the present invention. This projection optical system converts an image of an exposure area A of a pattern on a reticle R into a wafer W at a reduced magnification.
By imaging the reticle R and the wafer W in synchronization with each other at a speed ratio corresponding to the reduction magnification,
The optical system projects all images of the pattern on the reticle R onto the wafer W.
【００１４】この光学系は、レチクルＲ側から順に、レ
チクルＲ上のパターンの中間像を形成する第１結像光学
系と、中間像の近傍に配置した第１の平面鏡Ｍ1と、中
間像の再結像をウエハＷ上に形成する第２結像光学系と
から構成されている。第１結像光学系は、第１レンズ群
Ｇ1、第２レンズ群Ｇ2及び凹面鏡ＭCから成り、レチク
ルＲからの光が、第１レンズ群Ｇ1と第２レンズ詳Ｇ2と
をその順に通り、凹面鏡ＭCによって反射され、第２レ
ンズ群Ｇ2を往路とは逆向きに通り、第１の平面鏡Ｍ1に
よって反射するように構成されている。第２結像光学系
は、第１の平面鏡Ｍ1側から順に、正の屈折力を持つ第
３レンズ群Ｇ3、第２の平面鏡Ｍ2、第４レンズ群Ｇ4、
可変開口絞りＡＳ、及び第５レンズ群Ｇ5から構成され
ている。This optical system includes, in order from the reticle R side, a first imaging optical system for forming an intermediate image of a pattern on the reticle R, a first plane mirror M1 disposed near the intermediate image, and an intermediate image. And a second imaging optical system for forming a re-image on the wafer W. The first image forming optical system includes a first lens group G1 , a second lens group G2, and a concave mirror MC , and light from the reticle R transmits the first lens group G1 and the second lens details G2 . In this order, the light is reflected by the concave mirror MC , passes through the second lens group G2 in the direction opposite to the outward path, and is reflected by thefirst plane mirror M1 . The second imaging optical system includes, in order from the first plane mirror M1 side, a third lens group G3 having a positive refractive power, a second plane mirror M2 , a fourth lens group G4 ,
Variable aperture stop AS, and and a fifth lens group G5.
【００１５】この実施例において、すべてのレンズは合
成石英か、又は蛍石によって形成されており、特に、可
変開口絞りＡＳとウエハＷとの間に、蛍石によって形成
した負レンズＬCaが設けられている。また第１の平面鏡
Ｍ1と可変開口絞りＡＳとの間には、光の通る順に、中
間像側により強い凸面を向けた正レンズＬpと、中間像
側により強い凹面を向けた負レンズＬnが隣接して配置
されている。In this embodiment, all the lenses are made of synthetic quartz or fluorite. In particular, a negative lensLCa made of fluorite is provided between the variable aperture stop AS and the wafer W. Have been. In addition, between the first plane mirror M1 and the variable aperture stop AS, in the order in which light passes, a positive lens Lp having a stronger convex surface on the intermediate image side and a negative lens L having a stronger concave surface on the intermediate image side.n are arranged adjacently.
【００１６】図２はこの実施例の露光領域を示し、本実
施例の露光領域Ａは、投影光学系の有効領域のうち、走
査方向と直交する直径Ｌによって２分される一方の半円
領域内にあり、本実施例の露光領域Ａは、走査方向と直
交する方向に長辺ａを有し、走査方向に短辺ｂを有する
長方形スリット状としている。但し、円弧を走査方向に
平行移動して得られる円弧状スリットとすることもでき
る。FIG. 2 shows an exposure area of this embodiment. The exposure area A of this embodiment is one of the effective areas of the projection optical system which is divided into two semicircular areas by a diameter L orthogonal to the scanning direction. The exposure area A of this embodiment has a rectangular slit shape having a long side a in a direction orthogonal to the scanning direction and a short side b in the scanning direction. However, an arc-shaped slit obtained by translating the arc in the scanning direction may be used.
【００１７】本実施例の諸元を表１に示す。表１の［主
要諸元］中、露光領域はレチクルＲ上での値を示す。ま
た［光学部材諸元］中、第１欄ＮｏはレチクルＲ側から
の各光学面の番号、第２欄ｒは各光学面の曲率半径、第
３欄ｄは各光学面の間隔、第４欄は各光学部材の硝材、
第５欄は各光学部材又は光学面の番号又は群番号を表
す。曲率半径ｒは光線の進行方向側に曲率中心があると
きを正とし、光線の進行方向の反対側に曲率中心がある
ときを負としている。但し、光線が反射面によって反射
するたびに、正負を反転して表示している。各光学面の
間隔ｄも、光線が反射面によって反射するたびに、正負
を反転して表示している。Table 1 shows the specifications of this embodiment. In [Main Specifications] of Table 1, the exposure area indicates a value on the reticle R. In [optical member specifications], the first column No is the number of each optical surface from the reticle R side, the second column r is the radius of curvature of each optical surface, the third column d is the distance between each optical surface, The column is glass material of each optical member,
The fifth column shows the number or group number of each optical member or optical surface. The radius of curvature r is positive when the center of curvature is on the side of the light beam traveling direction, and is negative when the center of curvature is on the side opposite to the traveling direction of the light beam. However, each time a light ray is reflected by the reflection surface, the sign is inverted and displayed. The distance d between the optical surfaces is also shown by inverting the sign each time a light ray is reflected by the reflection surface.
【００１８】[0018]
【表１】[Table 1]
【００１９】図３に本実施例の横収差を示す。横収差図
中、Ｙは像高を表す。収差図に示されるように、本実施
例は優れた結像性能を有することが解る。FIG. 3 shows the lateral aberration of this embodiment. In the lateral aberration diagram, Y represents the image height. As shown in the aberration diagrams, it can be seen that this embodiment has excellent imaging performance.
【００２０】[0020]
【発明の効果】以上のように本発明によれば、紫外線波
長域で大きな開口数を達成し、光学系が実用的な大きさ
で、像側の作動距離も十分に確保され、クオーターミク
ロン単位の解像度を有する反射屈折投影光学系が得られ
た。As described above, according to the present invention, a large numerical aperture is achieved in the ultraviolet wavelength range, the optical system is of a practical size, the working distance on the image side is sufficiently ensured, and a unit of quarter micron is achieved. A catadioptric projection optical system having the following resolution was obtained.
【図１】本発明の一実施例を示す構成図FIG. 1 is a configuration diagram showing one embodiment of the present invention.
【図２】本実施例の露光領域を示す平面図FIG. 2 is a plan view showing an exposure region of the present embodiment.
【図３】本実施例の横収差図FIG. 3 is a lateral aberration diagram of the present embodiment.
Ｇ1…第１レンズ群 Ｇ2…第２レンズ群 Ｇ3…第３レンズ群 Ｇ4…第４レンズ群 Ｇ5…第５レンズ群 ＡＳ…開口絞り ＭC…凹面鏡 Ｍ1，Ｍ2…平面鏡 Ｒ…レチクル Ｗ…ウエハ Ａ…露光領域G1 … first lens group G2 … second lens group G3 … third lens group G4 … fourth lens group G5 … fifth lens group AS… aperture stop MC … concave mirror M1 , M2 … plane mirror R: reticle W: wafer A: exposure area
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9127927AJPH10308345A (en) | 1997-04-30 | 1997-04-30 | Catadioptric projection optics |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9127927AJPH10308345A (en) | 1997-04-30 | 1997-04-30 | Catadioptric projection optics |
| Publication Number | Publication Date |
|---|---|
| JPH10308345Atrue JPH10308345A (en) | 1998-11-17 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9127927APendingJPH10308345A (en) | 1997-04-30 | 1997-04-30 | Catadioptric projection optics |
| Country | Link |
|---|---|
| JP (1) | JPH10308345A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999052004A1 (en)* | 1998-04-07 | 1999-10-14 | Nikon Corporation | Projection exposure apparatus and method, and reflection refraction optical system |
| US6829099B2 (en) | 2000-03-31 | 2004-12-07 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus |
| KR100678484B1 (en)* | 2003-05-23 | 2007-02-07 | 캐논 가부시끼가이샤 | Projection optical system, exposure apparatus and device manufacturing method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999052004A1 (en)* | 1998-04-07 | 1999-10-14 | Nikon Corporation | Projection exposure apparatus and method, and reflection refraction optical system |
| US6707616B1 (en) | 1998-04-07 | 2004-03-16 | Nikon Corporation | Projection exposure apparatus, projection exposure method and catadioptric optical system |
| US6829099B2 (en) | 2000-03-31 | 2004-12-07 | Canon Kabushiki Kaisha | Projection optical system and projection exposure apparatus |
| KR100678484B1 (en)* | 2003-05-23 | 2007-02-07 | 캐논 가부시끼가이샤 | Projection optical system, exposure apparatus and device manufacturing method |
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