【０００１】[0001]
【発明の属する技術分野】本発明は、液体噴射記録ヘッ
ドに用いられる発熱基板に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heating substrate used for a liquid jet recording head.
【０００２】[0002]
【従来の技術】液体噴射記録装置等に使用される液体噴
射記録方式においては、米国特許第４７２３１２９号明
細書や米国特許第４７４０７９６号明細書に記載されて
いる液体噴射記録方式が、高速高密度で高精度高画質の
記録が可能であって、かつカラー化およびコンパクト化
に適しており、近年特に注目を集めている。2. Description of the Related Art In a liquid jet recording system used for a liquid jet recording apparatus or the like, a liquid jet recording system described in US Pat. No. 4,723,129 or US Pat. It is capable of high-precision, high-quality recording, and is suitable for colorization and compactness, and has been receiving particular attention in recent years.
【０００３】この方式を用いた代表的な液体噴射記録ヘ
ッドは、微細な吐出口、液流路およびこの液流路に位置
付けられた吐出エネルギー発生素子としての電気熱変換
体を複数具備して、電気熱変換体に記録情報に対応した
駆動信号を印加し、液体に核沸騰を越えて膜沸騰を生じ
させるような急激な温度上昇を与える熱エネルギーを発
生させ、液体内に気泡を形成させて、この気泡の成長、
収縮により、液体を液滴として吐出口から吐出させ記録
するように構成されている。すなわち、液流路に対応し
て一対の配線電極とこれらの配線電極に接続されて配線
電極間の領域に熱を発生するための発熱抵抗層を有する
電気熱変換体を素子基板上に設け、この発熱抵抗層から
発生する熱エネルギーを利用して液流路内の液体を急激
に加熱発泡させ、この発泡によって液体を吐出させてい
る。A typical liquid jet recording head using this method includes a plurality of fine discharge ports, a liquid flow path, and a plurality of electrothermal transducers as discharge energy generating elements positioned in the liquid flow path. Applying a drive signal corresponding to the recorded information to the electrothermal transducer, generating thermal energy that gives the liquid a sharp temperature rise that exceeds the nucleate boiling and causes film boiling, and forms bubbles in the liquid. The growth of this bubble,
The liquid is ejected from the ejection port as droplets by contraction, and is recorded. That is, an electrothermal transducer having a pair of wiring electrodes corresponding to the liquid flow paths and a heating resistance layer connected to these wiring electrodes and having a heating resistance layer for generating heat in a region between the wiring electrodes is provided on the element substrate, The liquid in the liquid flow path is rapidly heated and foamed by utilizing thermal energy generated from the heat generating resistance layer, and the liquid is discharged by the foaming.
【０００４】また最近においては、高精度高画質をさら
に向上させるために、電気熱変換体を配設した素子基板
（以下、この基板を発熱基板という。）における電気熱
変換体としての発熱抵抗体（以下、この発熱抵抗体を単
に発熱素子ともいう。）の配設ピッチを狭めるべく、発
熱抵抗体に接続するパターン配線や電極の一方を発熱抵
抗体の下方に位置付ける方法や投入するエネルギーの効
率を上げるべく発熱抵抗体上の保護膜をなくす方法等が
工夫されている。そして、この保護膜を省略した発熱抵
抗体の材料としては、ＴａＩｒ系の合金、酸化ニオブ、
酸化イリジウム等の貴金属系の合金や金属酸化物系のも
の、あるいはＴａＡｌ等が多数提案されている。なお、
ＴａＡｌを用いる場合には、その表面を約１５００オン
グストローム程度陽極酸化して用いており、この場合は
エネルギー効率は若干落ちるけれども、ほぼ同等の効果
を得ることができる。In recent years, in order to further improve high precision and high image quality, a heating resistor as an electrothermal converter in an element substrate provided with an electrothermal converter (hereinafter, this substrate is referred to as a heat generating substrate). (Hereinafter, this heating resistor is also simply referred to as a heating element.) In order to narrow the arrangement pitch, a method of positioning one of the pattern wirings and electrodes connected to the heating resistor below the heating resistor, and the efficiency of energy input. A method of eliminating a protective film on the heating resistor has been devised in order to increase the temperature. Examples of the material of the heating resistor from which the protective film is omitted include a TaIr-based alloy, niobium oxide,
Many noble metal alloys such as iridium oxide, metal oxides, and TaAl have been proposed. In addition,
When TaAl is used, its surface is anodically oxidized to about 1500 angstroms. In this case, although the energy efficiency is slightly lowered, almost the same effect can be obtained.
【０００５】この種の記録ヘッドの発熱基板について、
図４の（ａ）およびＹ−Ｙ線の断面図である図４の
（ｂ）を参照して説明すると、ＳｉＯ2 の蓄熱層２０２
を表面に形成したＳｉ基板２０１上に、第１のＡｌ層の
パターン配線２０３と第２のＡｌ層のパターン配線２０
５をＳｉＯ2 の層間絶縁膜２０４を介して上下に配設
し、そしてそれらの上に、第１および第２のＡｌ層２０
４、２０５に接続した発熱抵抗層２０８を形成してな
り、さらに発熱抵抗層２０８をＴａＩｒ系の合金、酸化
ニオブ、酸化イリジウム等の貴金属系の合金等のいずれ
かで作成することにより発熱抵抗層を保護する保護膜を
施すことなく発熱抵抗層の配設ピッチを狭めている。[0005] Regarding the heat generating substrate of this type of recording head,
Referring to FIG. 4A and FIG. 4B which is a cross-sectional view taken along the line YY, the heat storage layer 202 of SiO2 will be described.
Are formed on a Si substrate 201 having a surface on which a pattern wiring 203 of a first Al layer and a pattern wiring 20 of a second Al layer are formed.
5 are disposed one above the other via an SiO2 interlayer insulating film 204, and the first and second Al layers 20
4, 205, and a heating resistance layer 208 is formed. The heating resistance layer 208 is made of any of a noble metal based alloy such as TaIr-based alloy, niobium oxide, and iridium oxide. The arrangement pitch of the heat-generating resistance layers is reduced without providing a protective film for protecting the heat-generating resistor layers.
【０００６】[0006]
【発明が解決しようとする課題】しかしながら、電気熱
変換体としての発熱抵抗体の配設ピッチを狭めるために
発熱抵抗体に接続するパターン配線の一方を発熱抵抗体
の下方に位置付ける配線（以下、このような配線を、通
常一般の折返し配線に対して、上下折返し配線とい
う。）や投入エネルギーの効率を上げるべく保護膜を省
略した発熱抵抗体（以下、この発熱抵抗体を裸発熱素子
という。）を採用した従来の発熱基板には、次のような
問題点があった。However, in order to narrow the arrangement pitch of the heating resistor as an electrothermal converter, one of the pattern wirings connected to the heating resistor is positioned below the heating resistor (hereinafter, referred to as a wire). Such a wiring is generally referred to as a vertically folded wiring with respect to a general folded wiring, or a heating resistor in which a protective film is omitted in order to increase the efficiency of input energy (hereinafter, this heating resistor is referred to as a bare heating element). The conventional heat-generating substrate employing the method (1) has the following problems.
【０００７】すなわち、ピッチを狭めるために、配線の
間隔を狭くしそして発熱抵抗体の下層にパターン配線を
設けることにより、図４に示すように、基板上の段差が
複雑になり、また凹凸の間隔が狭くしかも高低差が大き
くなって、膜の被覆不足やエッチング残りが生じてしま
う。そして、投入エネルギーの効率を上げる裸発熱素子
は、配線や電極との接続部分の段差において膜厚のムラ
による抵抗値バラツキやインク発泡時の応力集中による
耐久性の不足という問題が生じる。That is, to reduce the pitch, the spacing between the wirings is reduced, and the pattern wiring is provided below the heating resistor, so that the steps on the substrate become complicated as shown in FIG. The gap is small and the height difference is large, resulting in insufficient film coverage and etching residue. The bare heating element that increases the efficiency of the input energy causes problems such as unevenness in the resistance value due to unevenness in the film thickness at the step at the connection portion with the wiring or the electrode, and insufficient durability due to stress concentration at the time of ink foaming.
【０００８】そこで、本発明は、上記従来技術の有する
未解決な課題に鑑みてなされたものであって、上下折返
し配線により発熱素子のピッチ間隔を縮小させて高密度
化を図りかつ裸発熱素子により吐出効率をアップさせる
とともに膜の被覆不足やエッチング残りを防止しそして
耐久性を向上させることができる液体噴射記録ヘッド用
の発熱基板を提供することを目的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned unsolved problems of the prior art, and has been made to reduce the pitch interval of heating elements by means of vertically folded wiring to achieve high density and to provide a naked heating element. It is an object of the present invention to provide a heat-generating substrate for a liquid-jet recording head, which can improve the ejection efficiency, prevent insufficient coating of the film and remaining etching, and improve the durability.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するた
め、本発明の液体噴射記録ヘッド用発熱基板は、複数の
発熱素子と該発熱素子に電気的に接続された複数の機能
素子を搭載し、画像データに対応して前記発熱素子へ選
択的に記録電流を通電するようになした液体噴射記録ヘ
ッド用発熱基板において、複数の発熱素子が平坦化され
た基板上に形成され、かつ発熱素子上にはそれを保護す
る保護膜等の上層が設けられていないことを特徴とす
る。To achieve the above object, a heat-generating substrate for a liquid jet recording head according to the present invention includes a plurality of heat-generating elements and a plurality of functional elements electrically connected to the heat-generating elements. A heating substrate for a liquid jet recording head adapted to selectively supply a recording current to the heating element in accordance with image data, wherein a plurality of heating elements are formed on a flattened substrate; It is characterized in that an upper layer such as a protective film for protecting it is not provided thereon.
【００１０】また、本発明の液体噴射記録ヘッド用発熱
基板は、複数の発熱素子と該発熱素子に電気的に接続さ
れた複数の機能素子を搭載した液体噴射記録ヘッド用発
熱基板で、画像データに対応して前記発熱素子へ選択的
に記録電流を通電するための駆動用集積回路を前記複数
の発熱素子および機能素子を含んだ同一基板上の表面内
部に構造的に設けてある液体噴射記録ヘッド用発熱基板
において、複数の発熱素子が平坦化された基板上に形成
され、かつ発熱素子上にはそれを保護する保護膜等の上
層が設けられていないことを特徴とする。The heat-generating substrate for a liquid-jet recording head according to the present invention is a heat-generating substrate for a liquid-jet recording head on which a plurality of heating elements and a plurality of functional elements electrically connected to the heating elements are mounted. Liquid jet recording, wherein a driving integrated circuit for selectively applying a recording current to the heating element is structurally provided inside a surface on the same substrate including the plurality of heating elements and functional elements. In the head heating substrate, a plurality of heating elements are formed on a flattened substrate, and no upper layer such as a protective film for protecting the heating elements is provided on the heating element.
【００１１】そして、本発明の液体噴射記録ヘッド用発
熱基板において、複数の発熱素子が平坦化された基板上
に形成され、かつ発熱素子上には該発熱素子表面を酸化
した膜以外は保護膜等の上層が設けられていないことを
特徴とする。In the heat-generating substrate for a liquid jet recording head according to the present invention, a plurality of heat-generating elements are formed on a flattened substrate, and a protective film is formed on the heat-generating elements except for a film obtained by oxidizing the surface of the heat-generating element. And no upper layer is provided.
【００１２】さらに、本発明の液体噴射記録ヘッド用発
熱基板において、複数の発熱素子は化学機械的に研磨さ
れ平坦化された基板上に形成されることが好ましく、ま
た、発熱素子を電気的に接続する配線は、その一方が発
熱素子の下層に位置するように、上下折返し配線の構成
とすることが好ましい。Further, in the heat-generating substrate for a liquid jet recording head according to the present invention, it is preferable that the plurality of heat-generating elements are formed on a substrate that has been polished chemically and polished and flattened. It is preferable that the wiring to be connected has a vertically folded wiring configuration such that one of the wirings is located below the heating element.
【００１３】さらに、本発明の液体噴射記録ヘッド用発
熱基板において、複数の発熱素子がＡｌのリフローと化
学機械的な研磨により平坦化された基板上に形成される
ことが好ましい。Further, in the heat generating substrate for a liquid jet recording head according to the present invention, it is preferable that a plurality of heat generating elements are formed on the flattened substrate by Al reflow and chemical mechanical polishing.
【００１４】[0014]
【作用】複数の発熱素子と該発熱素子に電気的に接続さ
れた複数の機能素子を搭載し、画像データに対応して発
熱素子へ選択的に記録電流を通電するようになした液体
噴射記録ヘッド用発熱基板において、複数の発熱素子を
化学機械研磨法等の研磨により平坦化された基板上に形
成し、また発熱素子に電気的に接続する配線電極は上下
折返し配線として構成し、そして発熱素子上にはそれを
保護する保護膜等の上層を設けないことにより、発熱素
子のピッチ間隔を縮小することができ高密度化を図るこ
とができ、さらに裸発熱素子によって吐出効率を向上さ
せることができるとともに、基板上の段差や凹凸をなく
すことができ、膜の被覆不足やエッチング残りの防止、
発熱素子の抵抗値のバラツキ低減や耐久性の向上を達成
することができ、液体噴射記録ヘッドの高性能化を図る
ことができる。A liquid jet recording apparatus having a plurality of heating elements and a plurality of functional elements electrically connected to the heating elements, and selectively supplying a recording current to the heating elements in accordance with image data. In the heating substrate for the head, a plurality of heating elements are formed on a flattened substrate by polishing such as a chemical mechanical polishing method, and wiring electrodes electrically connected to the heating elements are formed as upper and lower folded wirings. By not providing an upper layer such as a protective film for protecting the element, the pitch interval of the heating element can be reduced, the density can be increased, and the discharge efficiency can be improved by the naked heating element. As well as eliminating steps and irregularities on the substrate, preventing insufficient film coverage and etching residue,
It is possible to reduce the variation in the resistance value of the heating element and to improve the durability, and to improve the performance of the liquid jet recording head.
【００１５】[0015]
【発明の実施の形態】本発明の実施の形態を図面に基づ
いて説明する。Embodiments of the present invention will be described with reference to the drawings.
【００１６】本発明にかかる液体噴射記録ヘッド用の発
熱基板を図１の（ａ）および（ｂ）に図示し、図１の
（ｂ）は（ａ）のＸ−Ｘ線の断面図である。１０１は発
熱抵抗体の基板であり、１０３および１０５は、それぞ
れ第１および第２のＡｌ層のパターン配線であり、その
間にＳｉＯ2 の層間絶縁層１０４が設けられている。１
０８は平坦化された基板上に形成された発熱抵抗層であ
り、１０７は第１のＡｌ層のパターン配線１０３と発熱
抵抗層１０８を接続するためにＡｌが埋め込まれている
スルーホール部である。そして吐出エネルギー発生素子
として作用する発熱抵抗体に、画像データに対応して記
録電流を選択的に通電するための駆動素子は、発熱基板
とは別個の独立した基板に形成し、発熱基板と接続する
ように構成することもでき、また駆動素子を集積回路と
して発熱基板上の表面内部に構造的に設けることもでき
る。A heat generating substrate for a liquid jet recording head according to the present invention is shown in FIGS. 1A and 1B, and FIG. 1B is a sectional view taken along line XX of FIG. . Reference numeral 101 denotes a substrate of a heating resistor, and reference numerals 103 and 105 denote first and second Al layer pattern wirings, respectively, between which an interlayer insulating layer 104 of SiO2 is provided. 1
Reference numeral 08 denotes a heating resistance layer formed on the flattened substrate, and reference numeral 107 denotes a through-hole portion in which Al is buried for connecting the pattern wiring 103 of the first Al layer and the heating resistance layer. . A drive element for selectively supplying a recording current to the heating resistor acting as an ejection energy generating element in accordance with image data is formed on a separate board separate from the heating board and connected to the heating board. The driving element may be structurally provided inside the surface of the heat generating substrate as an integrated circuit.
【００１７】次に、液体噴射記録ヘッドにおいて液体に
気泡を発生させる発熱抵抗体の発熱基板を図２に図示す
る製造工程に沿って説明する。Next, a heat-generating substrate of a heat-generating resistor for generating bubbles in the liquid in the liquid jet recording head will be described with reference to the manufacturing process shown in FIG.
【００１８】（１）基板１０１としては、Ｓｉ基板、あ
るいは予め駆動の集積回路をＢｉＣＭＯＳ形態またはＣ
ＭＯＳ形態で作り込んだ基板を用いる。Ｓｉ基板の場合
は、熱酸化法、スパッタリング法、ＣＶＤ法等によっ
て、ＳｉＯ2 の蓄熱層を形成し、また集積回路を作り込
んだ基板においてはその製造プロセス中にＳｉＯ2 の蓄
熱層を同様に形成しておく。この状態を図２の（ａ）に
示し、ＳｉＯ2 の蓄熱層を１０２で示す。(1) As the substrate 101, a Si substrate or a pre-driving integrated circuit is a BiCMOS type or C
A substrate made in MOS mode is used. In the case of a Si substrate, a heat storage layer of SiO2 is formed by a thermal oxidation method, a sputtering method, a CVD method, or the like, and in a substrate in which an integrated circuit is formed, the heat storage layer of SiO2 is similarly formed during the manufacturing process. It is formed. This state is shown in FIG. 2A, and the heat storage layer of SiO2 is shown by 102.
【００１９】（２）後に形成する発熱抵抗体と接続する
第１のパターン配線としてのＡｌを、スパッタリングに
より、蓄熱層１０２の上に約５０００オングストローム
成膜（１０３ａ）し、フォトリソグラフィ法を用いたパ
ターニングによって、図２の（ｃ）に示すように所定の
形状とする。この時個々の発熱抵抗体に対応した第１の
Ａｌ層のパターン配線１０３が各発熱抵抗体の直下に位
置するようにその形状と位置を決定する。(2) Al as a first pattern wiring connected to a heating resistor to be formed later is formed on the heat storage layer 102 by sputtering to a film thickness of about 5000 angstroms (103a), and photolithography is used. By patterning, a predetermined shape is formed as shown in FIG. At this time, the shape and position are determined so that the pattern wiring 103 of the first Al layer corresponding to each heating resistor is located immediately below each heating resistor.
【００２０】（３）次に、図２の（ｄ）に示すように、
ＣＶＤ法によって層間絶縁層としてのＳｉＯ2 膜１０４
を約１．４μｍ成膜し、さらに発熱抵抗体を介して第１
のＡｌ層１０３と接続する第２のＡｌ層１０５ａをスパ
ッタリングによって約５０００オングストローム形成す
る（図２の（ｅ））。(3) Next, as shown in FIG.
SiO2 film 104 as interlayer insulating layer by CVD
Is formed to a thickness of about 1.4 μm, and the first
A second Al layer 105a connected to the first Al layer 103 is formed to about 5,000 angstroms by sputtering (FIG. 2E).
【００２１】そして、フォトリソグラフィ法を用いたパ
ターニングによって、第１のＡｌ層１０３の直上に発熱
抵抗体の長さ部分だけずらして、第２のＡｌ層１０５の
配線が位置するようにパターン化する（図２の
（ｆ））。Then, by patterning using a photolithography method, patterning is performed such that the wiring of the second Al layer 105 is located just above the first Al layer 103 by the length of the heating resistor. ((F) of FIG. 2).
【００２２】（４）ＣＶＤ法によってＳｉＯ2 膜１０６
を約２μｍの厚さに形成する。（図２の（ｇ））。(4) SiO2 film 106 by CVD
Is formed to a thickness of about 2 μm. ((G) of FIG. 2).
【００２３】（５）そして、第１のＡｌ層１０３の端部
の直上にフォトリソグラフィ法によってスルーホール部
１０７ａを形成する（図２の（ｈ））。(5) Then, a through-hole 107a is formed by photolithography just above the end of the first Al layer 103 (FIG. 2 (h)).
【００２４】（６）ＣＶＤ法によってスルーホール部１
０７ａにＡｌ材を埋め込み（図２の（ｉ））、その後、
化学機械研磨法、すなわち一般にＣＭＰ法と呼ばれてい
るプロセス＜「ＳＥＭＩテクノロジー９４、講演予稿
集」（１７９〜１８５頁、２５９〜２６７頁および２６
９〜２７８頁）や「日経マイクロデバイス（１９９５年
５月号）」（１１９〜１２１頁）等に記載されたプロセ
ス＞を用いて、その表面を化学機械的に研磨し、Ａｌを
埋め込んだスルーホール部１０７、第２のＡｌ層のパタ
ーン配線１０５、およびＳｉＯ2 絶縁膜１０６の面を平
坦化する（図２の（ｊ））。(6) Through-hole 1 by CVD
07a was buried with an Al material (FIG. 2 (i)).
Chemical mechanical polishing method, a process generally called CMP method <“SEMI Technology 94, Proceedings” (pp. 179-185, 259-267 and 26)
9-278) and "Nikkei Microdevices (May 1995)" (pages 119-121), etc., and the surface is chemically and mechanically polished, and the through-hole in which Al is embedded is used. The surfaces of the hole 107, the pattern wiring 105 of the second Al layer, and the SiO2 insulating film 106 are flattened (FIG. 2 (j)).
【００２５】（７）次に、反応性スパッタリングによ
り、発熱抵抗体層としてのＴａＩｒ層を約１０００オン
グストロームの厚さに形成し（図２の（ｋ））、フォト
リソグラフィ法を用いたパターニングによって、ＴａＩ
ｒ層１０８をスルーホール部１０７と第２のＡｌ層のパ
ターン配線１０５を被覆するように形成して、発熱基板
を完成する。(7) Next, a TaIr layer as a heating resistor layer is formed to a thickness of about 1000 angstroms by reactive sputtering (FIG. 2 (k)) and patterned by photolithography. TaI
The r layer 108 is formed so as to cover the through hole 107 and the pattern wiring 105 of the second Al layer, thereby completing the heat generating substrate.
【００２６】また、前述した発熱基板の製造において
は、裸発熱素子として、ＴａＩｒを用いているが、この
ＴａＩｒに代えて、ＴａＡｌを用いることもできる。こ
の場合に、ＴａＡｌのパターニング前にＴａＡｌ表面を
陽極酸化することにより、ＴａＡｌ表面に約１５００オ
ングストロームの酸化膜を形成する。そして、前述と同
様にパターニングによってＴａＡｌ層をスルーホール部
１０７と第２のＡｌ層のパターン配線１０５を被覆する
ように形成し、発熱基板を得ることができる。なお、Ｔ
ａＡｌ表面に酸化膜を形成したことにより、投入エネル
ギーの効率はやや落ちるとはいえ、ほぼ同等に効果を得
るものであり、信頼性の高い構成とすることができる。Although TaIr is used as the bare heating element in the above-described manufacturing of the heat generating substrate, TaAl can be used instead of TaIr. In this case, an oxide film of about 1500 angstroms is formed on the TaAl surface by anodizing the TaAl surface before patterning the TaAl. Then, a TaAl layer is formed by patterning in the same manner as described above so as to cover the through-hole portion 107 and the pattern wiring 105 of the second Al layer, and a heat generating substrate can be obtained. Note that T
By forming the oxide film on the aAl surface, the efficiency of the input energy is slightly reduced, but the effects are obtained almost equally, and a highly reliable configuration can be obtained.
【００２７】さらに、本発明にかかる液体噴射記録ヘッ
ド用の発熱基板について他の製造方法を図３に基づいて
説明する。Further, another method of manufacturing a heat-generating substrate for a liquid jet recording head according to the present invention will be described with reference to FIG.
【００２８】（１）先に説明した第１の製造方法と同様
に、ＳｉＯ2 の蓄熱層１０２を形成した基板１０１に、
第１のＡｌ層１０３ａを約５０００オングストローム形
成し、フォトリソグラフィ法を用いたパターニングによ
ってパターン化した基板に、層間絶縁層として厚さが約
２μｍのＳｉＯ2 膜１０４をＣＶＤ法によって全面に形
成する（図３の（ａ）〜（ｄ））。(1) Similar to the first manufacturing method described above, the substrate 101 on which the heat storage layer 102 of SiO2 is formed
A first Al layer 103a is formed to about 5000 angstroms, and a SiO2 film 104 having a thickness of about 2 μm is formed as an interlayer insulating layer on the entire surface by a CVD method on a substrate patterned by patterning using a photolithography method ( (A) to (d) of FIG.
【００２９】（２）次に、フォトリソグラフィ法によっ
て、第２のＡｌ層を後に位置付け形成する溝部１１８ａ
と、第１のＡｌ層１０３と後に形成する発熱抵抗体とを
接続するためのスルーホール部１１７ａを形成する（図
３の（ｅ））。(2) Next, a groove portion 118a for forming and positioning a second Al layer later by photolithography.
Then, a through-hole portion 117a for connecting the first Al layer 103 to a heating resistor to be formed later is formed (FIG. 3E).
【００３０】（３）スパッタリングによって第２のＡｌ
層１１５ａを約１μｍ形成する（図３の（ｆ））。(3) Second Al by sputtering
The layer 115a is formed to about 1 μm (FIG. 3F).
【００３１】（４）装置中で基板を大気にさらさない状
態にして、約５００℃に加熱し、Ａｌ層１１５ａをリフ
ローし、スルーホール部１１７ａおよび溝部１１８ａに
Ａｌを充填させて、Ａｌが埋め込まれたスルーホール部
１１７と第２のＡｌ層１１５ｂを形成する。このリフロ
ー後の形状を図３の（ｇ）に示す。(4) The substrate is not exposed to the air in the apparatus, and is heated to about 500 ° C. to reflow the Al layer 115a, fill the through hole 117a and the groove 118a with Al, and bury Al. The formed through-hole portion 117 and the second Al layer 115b are formed. The shape after the reflow is shown in FIG.
【００３２】（５）そして、先に説明した製造方法と同
様に、化学機械研磨法（ＣＭＰ法）によって表面を化学
機械的に研磨して平坦化し（図３の（ｈ））、その後発
熱抵抗体１０８を形成する（図３の（ｉ））。(5) In the same manner as in the manufacturing method described above, the surface is chemically mechanically polished and flattened by a chemical mechanical polishing method (CMP method) (FIG. 3 (h)). The body 108 is formed ((i) of FIG. 3).
【００３３】上述のような製造工程により製造された本
発明の発熱基板は、図１の（ａ）および（ｂ）に示すよ
うに、上下折返し配線と裸発熱素子の構成とするとき、
発熱抵抗体を、化学機械的に研磨され平坦化された基板
上に形成することにより、基板上の段差や凹凸をなくす
ることができ、膜の被覆不足やエッチング残りの防止、
さらに裸発熱素子の抵抗値のバラツキ低減や耐久性の向
上を達成することができる。なお、本発明は、上述のよ
うな製造工程によって製造されるものに限定されるもの
ではなく、その他の種々の製造方法によっても製造しう
るものである。As shown in FIGS. 1A and 1B, the heat-generating substrate of the present invention manufactured by the above-described manufacturing process has the following structure:
By forming the heating resistor on a flattened substrate that has been chemically and mechanically polished, steps and irregularities on the substrate can be eliminated, preventing insufficient coating of the film and remaining etching,
Furthermore, it is possible to reduce the variation of the resistance value of the bare heating element and improve the durability. The present invention is not limited to those manufactured by the above-described manufacturing process, but can be manufactured by other various manufacturing methods.
【００３４】[0034]
【発明の効果】本発明は、以上説明したように構成され
ているので、上下折返し配線により発熱素子のピッチ間
隔を縮小することができ高密度化を図ることができ、さ
らに裸発熱素子によって吐出効率を向上させることがで
きるとともに、膜の被覆不足やエッチング残りの防止、
発熱素子の抵抗値のバラツキ低減や耐久性の向上を達成
することができ、液体噴射記録ヘッドの高性能化を図る
ことができる。According to the present invention, as described above, the pitch interval between the heating elements can be reduced by the vertically folded wiring, the density can be increased, and the discharge can be achieved by the naked heating element. Efficiency can be improved, and insufficient coating of the film and prevention of etching residue can be prevented.
It is possible to reduce the variation in the resistance value of the heating element and to improve the durability, and to improve the performance of the liquid jet recording head.
【図１】（ａ）は本発明の液体噴射記録ヘッド用の発熱
基板の平面図であり、（ｂ）は（ａ）のＸ−Ｘ線の断面
図である。FIG. 1A is a plan view of a heating substrate for a liquid jet recording head according to the present invention, and FIG. 1B is a cross-sectional view taken along line XX of FIG.
【図２】本発明の発熱基板の製造工程を説明するための
模式図である。FIG. 2 is a schematic view for explaining a manufacturing process of a heat generating substrate according to the present invention.
【図３】本発明の発熱基板の他の製造工程を説明するた
めの模式図である。FIG. 3 is a schematic diagram for explaining another manufacturing process of the heat generating substrate of the present invention.
【図４】（ａ）は従来の液体噴射記録ヘッドの発熱基板
の平面図であり、（ｂ）は（ａ）のＹ−Ｙ線の断面図で
ある。FIG. 4A is a plan view of a heat generating substrate of a conventional liquid jet recording head, and FIG. 4B is a cross-sectional view taken along line YY of FIG.
１０１ Ｓｉ基板 １０２ ＳｉＯ2 蓄熱層 １０３ 第１のＡｌ層（パターン配線） １０４ 層間絶縁層 １０５，１１５ 第２のＡｌ層（パターン配線） １０７，１１７ スルーホール部 １０８ 発熱抵抗層Reference Signs List 101 Si substrate 102 SiO2 heat storage layer 103 First Al layer (pattern wiring) 104 Interlayer insulating layer 105, 115 Second Al layer (pattern wiring) 107, 117 Through hole 108 Heating resistance layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 久保田 雅彦 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 ──────────────────────────────────────────────────続 き Continued from the front page (72) Inventor Masahiko Kubota 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8286132AJPH10109421A (en) | 1996-10-08 | 1996-10-08 | Heating substrate for liquid jetting recording head |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8286132AJPH10109421A (en) | 1996-10-08 | 1996-10-08 | Heating substrate for liquid jetting recording head |
| Publication Number | Publication Date |
|---|---|
| JPH10109421Atrue JPH10109421A (en) | 1998-04-28 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8286132APendingJPH10109421A (en) | 1996-10-08 | 1996-10-08 | Heating substrate for liquid jetting recording head |
| Country | Link |
|---|---|
| JP (1) | JPH10109421A (en) |
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