【０００１】[0001]
【発明の属する技術分野】本発明は、シリコン酸化膜の
成膜方法及びプラズマＣＶＤ成膜装置に関するものであ
り、特に薄膜トランジスタ、液晶表示素子用アクティブ
マトリクス基板等のシリコン酸化膜の成膜方法及びプラ
ズマＣＶＤ成膜装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a silicon oxide film and a plasma CVD film forming apparatus, and more particularly to a method for forming a silicon oxide film such as a thin film transistor and an active matrix substrate for a liquid crystal display device, and a plasma. The present invention relates to a CVD film forming apparatus.
【０００２】[0002]
【従来の技術】半導体素子等の絶縁膜を成膜する場合、
４００℃以下の温度で被覆性の良いシリコン酸化膜を成
膜するときには、有機シランガスと酸化性ガスを用い
て、プラズマＣＶＤ成膜装置にて成膜する方法が一般的
に知られている。2. Description of the Related Art When forming an insulating film for a semiconductor device,
When forming a silicon oxide film having good coverage at a temperature of 400 ° C. or lower, a method of forming a film using a plasma CVD film forming apparatus using an organic silane gas and an oxidizing gas is generally known.
【０００３】プラズマＣＶＤ成膜装置を図２を用いて説
明する。成膜チャンバー２１内には、加熱ヒーターを内
蔵した基板ホルダー２２が設けられ、基板ホルダー２２
上には被成膜基板２３が載置されている。成膜チャンバ
ー２１の外側には、水冷用水管２５が設けられており、
冷却できるようになっている。成膜チャンバー２１には
上蓋２６が設けられ、上蓋２６にはガス供給シャワープ
レートが付いた高周波電力印加用電極２７が設けられて
いる。A plasma CVD film forming apparatus will be described with reference to FIG. A substrate holder 22 having a built-in heater is provided in the film forming chamber 21.
The film formation substrate 23 is placed on the top. A water cooling water pipe 25 is provided outside the film forming chamber 21,
It can be cooled. The film forming chamber 21 is provided with an upper lid 26, and the upper lid 26 is provided with a high frequency power applying electrode 27 having a gas supply shower plate.
【０００４】基板ホルダー２２、成膜チャンバー２１及
び上蓋２６はアースされ、高周波電力印加用電極２７に
は、高周波電源２９が接続されている。ガス導入管３０
には有機シランガス及び酸化性ガスの供給装置（図示せ
ず）が繋がっており、有機シランガス及び酸化性ガスが
混合されて供給される。成膜チャンバー２１の下側に
は、排気装置（図示せず）に繋がった排気管３１が設け
れている。The substrate holder 22, the film forming chamber 21 and the upper lid 26 are grounded, and a high frequency power source 29 is connected to the high frequency power applying electrode 27. Gas introduction pipe 30
A supply device (not shown) for the organic silane gas and the oxidizing gas is connected to, and the organic silane gas and the oxidizing gas are mixed and supplied. An exhaust pipe 31 connected to an exhaust device (not shown) is provided below the film forming chamber 21.
【０００５】[0005]
【発明が解決しようとする課題】前述したような、原料
ガスとして、有機シランガスと酸化性ガスとを用いるプ
ラズマＣＶＤ成膜装置によるシリコン酸化膜の成膜を続
けて行うと、被成膜基板以外の箇所、例えば、成膜チャ
ンバーの内壁、高周波電力印加用電極表面部分等にも、
大量に有機シランガスの分解中間生成物である酸化シリ
コンの前駆体が堆積してしまう。この酸化シリコンの前
駆体が剥離し、またはプラズマによって削られ、パーテ
ィクル及びフレーク（以下、パーティクル及びフレーク
を総称してパーティクルと表記する）となって飛散す
る。このパーティクルは、粒径５μｍ以上の大型のもの
が多く、被成膜基板に付着した場合には、微細加工の形
状を変形させ、素子の特性を劣化させるとともに、製品
の良品率を低下させる原因となっている。When the silicon oxide film is continuously formed by the plasma CVD film forming apparatus using the organic silane gas and the oxidizing gas as the raw material gas as described above, other than the substrate to be formed. , For example, on the inner wall of the film forming chamber, the electrode surface for high frequency power application,
A large amount of a precursor of silicon oxide, which is a decomposition intermediate product of organosilane gas, is deposited. The silicon oxide precursor is peeled off or scraped by plasma, and becomes particles and flakes (hereinafter, the particles and flakes are collectively referred to as particles) and scatters. Many of these particles are large particles having a particle size of 5 μm or more, and when they adhere to the film formation substrate, they deform the shape of microfabrication, deteriorate the characteristics of the element, and reduce the yield rate of products. Has become.
【０００６】このパーティクルへの対策としては、パー
ティクルの発生を防止する有効な方法が無かったため、
頻繁に成膜チャンバー内部のクリーニングを行うことに
よって、パーティクルが被成膜基板に付着しないように
している。As a countermeasure against these particles, there has been no effective method for preventing the generation of particles.
By frequently cleaning the inside of the film formation chamber, particles are prevented from adhering to the film formation substrate.
【０００７】しかし、成膜チャンバー内壁のように、室
温乃至１００℃程度の比較的低温部分に堆積する有機シ
ランガスの分解中間生成物である酸化シリコンの前駆体
は、重合等によりポリマー化している。さらに、酸化シ
リコンの前駆体の堆積量が多いため、通常の四弗化炭素
（ＣＦ4 ）、三弗化窒素（ＮＦ3 ）等のクリーニングガ
スを用いて、エッチングによるクリーニングを行って
も、累積成膜時間の２〜３倍の長時間を要するだけでな
く、酸化シリコンの前駆体を完全に除去することができ
ず、残渣が残ることが多い。そして、この残渣を人手に
よって、布等で拭き取る等して除去する必要がある。However, the precursor of silicon oxide, which is a decomposition intermediate product of the organic silane gas deposited at a relatively low temperature portion of about room temperature to 100 ° C. such as the inner wall of the film forming chamber, is polymerized by polymerization or the like. Furthermore, since the amount of silicon oxide precursor deposited is large, even if cleaning is performed by etching using a normal cleaning gas such as carbon tetrafluoride (CF4 ) or nitrogen trifluoride (NF3 ), the accumulated Not only does it take a long time of 2 to 3 times the film formation time, but the precursor of silicon oxide cannot be completely removed, and a residue often remains. Then, it is necessary to manually remove this residue by wiping it with a cloth or the like.
【０００８】このように、パーティクルの発生を減少さ
せることは困難であり、成膜チャンバー内部のクリーニ
ングには、多大な時間及び労力が必要である。As described above, it is difficult to reduce the generation of particles, and cleaning the inside of the film forming chamber requires a lot of time and labor.
【０００９】本発明は、前述した従来の問題点に鑑みな
されたものであって、パーティクルの発生を極めて少な
くし、成膜チャンバー内部のクリーニングに要する時間
及び労力を低減することを目的としている。The present invention has been made in view of the above-mentioned conventional problems, and an object thereof is to extremely reduce the generation of particles and to reduce the time and labor required for cleaning the inside of the film forming chamber.
【００１０】[0010]
【課題を解決するための手段】前述した目的を達成する
ために、本発明の請求項１記載のシリコン酸化膜の成膜
方法は、少なくとも被成膜基板を収容する成膜チャンバ
ーと高周波電力印加用電極とを備えたプラズマＣＶＤ成
膜装置により、有機シランガス及び酸化性ガスを用いて
シリコン酸化膜を成膜するシリコン酸化膜の成膜方法で
あって、シリコン酸化膜を成膜する際に、該成膜チャン
バー内壁及び該高周波電力印加用電極の少なくとも一方
が、加熱されていることを特徴としている。In order to achieve the above-mentioned object, a method of forming a silicon oxide film according to claim 1 of the present invention comprises a film forming chamber accommodating at least a film forming substrate and a high frequency power application. A method for forming a silicon oxide film using an organic silane gas and an oxidizing gas by a plasma CVD film forming apparatus equipped with an electrode for forming a silicon oxide film, the method comprising: At least one of the inner wall of the film forming chamber and the electrode for applying high-frequency power is heated.
【００１１】請求項２記載のシリコン酸化膜の成膜方法
は、前記成膜チャンバー内壁及び前記高周波電力印加用
電極の少なくとも一方の表面温度が、前記被成膜基板の
表面温度よりも高くなるように加熱されていることを特
徴としている。According to a second aspect of the present invention, in the method of forming a silicon oxide film, the surface temperature of at least one of the inner wall of the film forming chamber and the electrode for applying high-frequency power is higher than the surface temperature of the film formation substrate. It is characterized by being heated to.
【００１２】請求項３記載のプラズマＣＶＤ成膜装置
は、少なくとも被成膜基板を収容する成膜チャンバーと
高周波電力印加用電極とを備えたプラズマＣＶＤ成膜装
置であって、該成膜チャンバーの内壁表面を加熱する手
段と、該高周波電力印加用電極表面を加熱する手段との
うち、少なくとも一方を備えていることを特徴としてい
る。A plasma CVD film forming apparatus according to a third aspect of the present invention is a plasma CVD film forming apparatus including at least a film forming chamber for accommodating a film formation substrate and an electrode for applying high frequency power. At least one of the means for heating the inner wall surface and the means for heating the high frequency power applying electrode surface is provided.
【００１３】本発明によれば、成膜チャンバー内壁及び
高周波電力印加用電極の少なくとも一方を加熱しながら
シリコン酸化膜の成膜を行うことにより、成膜チャンバ
ー内壁及び高周波電力印加用電極への有機シランガスの
分解中間生成物である酸化シリコンの前駆体の堆積量を
減少させることができる。According to the present invention, the silicon oxide film is formed while heating at least one of the inner wall of the film forming chamber and the electrode for applying high-frequency power, so that the organic film is formed on the inner wall of the film forming chamber and the electrode for applying high-frequency power. It is possible to reduce the deposition amount of the precursor of silicon oxide which is a decomposition intermediate product of silane gas.
【００１４】これは、シリコン酸化膜の成膜速度が、有
機シランガスの分解中間生成物である酸化シリコンの前
駆体の被成膜体への吸着反応に支配されているため、被
成膜体の表面温度が高くなれば成膜速度が遅くなり、被
成膜体の表面温度が低くなれば成膜速度が速くなるから
である。This is because the film formation rate of the silicon oxide film is governed by the adsorption reaction of the precursor of silicon oxide, which is a decomposition intermediate product of the organic silane gas, to the film formation target. This is because the film forming rate becomes slower as the surface temperature becomes higher, and the film forming rate becomes faster as the surface temperature of the film-forming target becomes lower.
【００１５】さらに、成膜チャンバー内壁及び高周波電
力印加用電極を、被成膜基板の温度よりも高くなるよう
に加熱することにより、望ましくは、被成膜基板の温度
よりも２０℃乃至１００℃高くなるように加熱すること
により、成膜チャンバー内壁及び高周波電力印加用電極
への有機シランガスの分解中間生成物である酸化シリコ
ンの前駆体の堆積量をより一層減少させることができ
る。Further, by heating the inner wall of the film forming chamber and the electrode for applying high frequency power to a temperature higher than the temperature of the film forming substrate, it is desirable that the temperature is 20 ° C. to 100 ° C. higher than the temperature of the film forming substrate. By heating to a high temperature, it is possible to further reduce the deposition amount of the precursor of silicon oxide which is a decomposition intermediate product of the organosilane gas on the inner wall of the film forming chamber and the electrode for applying high frequency power.
【００１６】また、加熱されることによって、成膜チャ
ンバー内壁及び高周波電力印加用電極の表面温度が上昇
していることにより、成膜チャンバー内壁及び高周波電
力印加用電極へ堆積した酸化シリコンの前駆体は、ＯＨ
基、ＣＯ基等の脱離反応が進行し、ほぼシリコン酸化膜
となるため、四弗化炭素及び三弗化窒素等の一般的なク
リーニングガスを用いたエッチングで容易に除去するこ
とが可能となり、残渣もほとんど残ることがなくなる。Further, since the surface temperature of the inner wall of the film forming chamber and the electrode for applying high frequency power is increased by being heated, the precursor of silicon oxide deposited on the inner wall of the film forming chamber and the electrode for applying high frequency power. Is OH
Since the elimination reaction of radicals, CO radicals, etc. progresses to form a silicon oxide film, it can be easily removed by etching using a general cleaning gas such as carbon tetrafluoride and nitrogen trifluoride. However, almost no residue remains.
【００１７】これらのことから、パーティクルの発生量
を大幅に減少させることができるとともに、成膜チャン
バー内部のクリーニングに要する時間及び労力を大幅に
低減させることができる。For these reasons, the amount of particles generated can be greatly reduced, and the time and labor required for cleaning the inside of the film forming chamber can be greatly reduced.
【００１８】また、本発明のプラズマＣＶＤ成膜装置に
よれば、成膜チャンバー内壁及び高周波電力印加用電極
表面を加熱する手段を備えているため、シリコン酸化膜
を成膜する際に、該手段により、成膜チャンバー内壁及
び高周波電力印加用電極表面を加熱し、パーティクルの
発生量を大幅に減少させることができるとともに、成膜
チャンバー内部のクリーニングに要する時間及び労力を
大幅に低減させることができる。Further, since the plasma CVD film forming apparatus of the present invention is provided with a means for heating the inner wall of the film forming chamber and the surface of the electrode for applying high frequency power, the means for forming a silicon oxide film is provided. As a result, the inner wall of the film formation chamber and the surface of the electrode for applying high-frequency power can be heated, and the amount of particles generated can be significantly reduced, and the time and labor required for cleaning the interior of the film formation chamber can be significantly reduced. .
【００１９】[0019]
【発明の実施の形態】以下に、本発明の実施の形態につ
いて説明する。図１は、本発明の実施の形態に係わるプ
ラズマＣＶＤ成膜装置の構成を示す模式図である。Embodiments of the present invention will be described below. FIG. 1 is a schematic diagram showing the configuration of a plasma CVD film forming apparatus according to an embodiment of the present invention.
【００２０】成膜チャンバー１内には、加熱ヒーターを
内蔵した基板ホルダー２が設けられ、基板ホルダー２上
には被成膜基板３が載置されている。成膜チャンバー１
の壁は二重構造になっており、内側には成膜チャンバー
内壁加熱ヒーター４が内蔵され、成膜チャンバー１の内
壁表面温度を昇温制御できるようになっている。成膜チ
ャンバー１の外側には、水冷用水管５が設けられてお
り、冷却できるようになっている。A substrate holder 2 having a heater built therein is provided in the film forming chamber 1, and a film formation target substrate 3 is placed on the substrate holder 2. Deposition chamber 1
The wall has a double structure, and a heater 4 for heating the inner wall of the film forming chamber is provided inside so that the temperature of the surface of the inner wall of the film forming chamber 1 can be controlled. A water pipe 5 for water cooling is provided outside the film forming chamber 1 so that it can be cooled.
【００２１】成膜チャンバー１には上蓋６が設けられ、
上蓋６にはガス供給シャワープレートが付いた高周波電
力印加用電極７が設けられている。高周波電力印加用電
極７には、高周波電力印加用電極加熱ヒーター８が内蔵
されており、高周波電力印加用電極７の表面温度を昇温
制御できるようになっている。The film forming chamber 1 is provided with an upper lid 6,
The upper lid 6 is provided with a high frequency power applying electrode 7 having a gas supply shower plate. A high-frequency power applying electrode heater 8 is built in the high-frequency power applying electrode 7 so that the surface temperature of the high-frequency power applying electrode 7 can be controlled to be increased.
【００２２】基板ホルダー２、成膜チャンバー１及び上
蓋６はアースされ、高周波電力印加用電極７には、高周
波電源９が接続されている。ガス導入管１０には有機シ
ランガス及び酸化性ガスの供給装置（図示せず）が繋が
っており、有機シランガス及び酸化性ガスが混合されて
供給される。成膜チャンバー１の下側には、排気装置
（図示せず）に繋がった排気管１１が設けれている。The substrate holder 2, the film forming chamber 1 and the upper lid 6 are grounded, and a high frequency power source 9 is connected to the high frequency power applying electrode 7. A supply device (not shown) for the organic silane gas and the oxidizing gas is connected to the gas introduction pipe 10, and the organic silane gas and the oxidizing gas are mixed and supplied. An exhaust pipe 11 connected to an exhaust device (not shown) is provided below the film forming chamber 1.
【００２３】（実施の形態１）先ず、成膜チャンバー１
内の基板ホルダー２に被成膜基板３を載置し、基板ホル
ダー２に内蔵された加熱ヒーターにより、３１５℃に昇
温制御した。そして、高周波電力印加用電極７の表面温
度を高周波電力印加用電極加熱ヒーター８により、成膜
チャンバー１の内壁表面温度を成膜チャンバー内壁加熱
ヒーター４により、それぞれ３５０℃になるように昇温
制御した。(Embodiment 1) First, a film forming chamber 1
The film formation substrate 3 was placed on the substrate holder 2 inside, and the temperature rise was controlled to 315 ° C. by the heater built in the substrate holder 2. The surface temperature of the high-frequency power applying electrode 7 is controlled by the high-frequency power applying electrode heater 8 and the inner wall surface temperature of the film forming chamber 1 is controlled by the film forming chamber inner wall heater 4 to be 350 ° C., respectively. did.
【００２４】次に、成膜チャンバー１内を排気管１１か
ら排気し、１ｍＰａ以下の圧力になるまで排気を行っ
た。その後、ガス導入管１０より、有機シランガスとし
てのテトラエチルオルソシリケイト１０ｃｃ／ｍｉｎ、
酸化性ガスとしての酸素２００ｃｃ／ｍｉｎを混合して
供給した。供給された混合ガスは、高周波電力印加用電
極７に付けられたシャワープレートより、成膜チャンバ
ー１内に導入された。そして、排気管１１からの排気速
度を制御し、成膜チャンバー１内の圧力を１３０Ｐａに
した。Next, the inside of the film forming chamber 1 was evacuated through the exhaust pipe 11 and evacuated to a pressure of 1 mPa or less. Then, from the gas introduction pipe 10, tetraethyl orthosilicate 10 cc / min as an organic silane gas,
200 cc / min of oxygen as an oxidizing gas was mixed and supplied. The supplied mixed gas was introduced into the film forming chamber 1 from a shower plate attached to the high frequency power applying electrode 7. Then, the exhaust speed from the exhaust pipe 11 was controlled to set the pressure in the film forming chamber 1 to 130 Pa.
【００２５】被成膜基板３の温度、成膜チャンバー１内
の圧力が安定した後、高周波電源９より、１３．５６Ｍ
Ｈｚ、１５０Ｗ（０．３３Ｗ／ｃｍ2 ）の高周波電力を
高周波電力印加用電極７に印加し、成膜チャンバー１内
にプラズマ放電を起こさせた。この状態を８分間保持す
ることにより、被成膜基板３上に膜厚０．４μｍのシリ
コン酸化膜を成膜した。After the temperature of the film-forming substrate 3 and the pressure in the film-forming chamber 1 are stabilized, the high-frequency power source 9 causes 13.56M.
A high frequency power of 150 W (0.33 W / cm2 ) of Hz was applied to the high frequency power applying electrode 7 to cause plasma discharge in the film forming chamber 1. By holding this state for 8 minutes, a silicon oxide film having a film thickness of 0.4 μm was formed on the film formation target substrate 3.
【００２６】この方法で１０回続けて成膜し、１０回目
に成膜を行った被成膜基板３上に付着した５μｍ以上の
大きさのパーティクル数を測定したところ、０．１個／
ｃｍ2以下であった。The number of particles having a size of 5 μm or more adhered onto the film-forming substrate 3 on which the film was formed 10 times in succession by this method was measured, and the number was 0.1 /
It was below cm2 .
【００２７】（実施の形態２）高周波電力印加用電極７
の表面温度を、高周波電力印加用電極加熱ヒーター８に
より昇温制御しなかったこと以外は、実施の形態１と同
様に行い、被成膜基板３上に膜厚０．４μｍのシリコン
酸化膜を成膜した。(Embodiment 2) High frequency power applying electrode 7
The same procedure as in the first embodiment is performed except that the surface temperature of No. 1 is not controlled by the electrode heater 8 for applying high frequency power, and a silicon oxide film having a thickness of 0.4 μm is formed on the film formation target substrate 3. A film was formed.
【００２８】この方法で１０回続けて成膜し、１０回目
に成膜を行った被成膜基板３上に付着した５μｍ以上の
大きさのパーティクル数を測定したところ、０．３個／
ｃｍ2であった。The number of particles having a size of 5 μm or more adhered on the film-forming substrate 3 on which the film was formed 10 times in succession by this method was measured, and the number was 0.3 /
cm2 .
【００２９】（実施の形態３）成膜チャンバー１の内壁
表面温度を、成膜チャンバー内壁加熱ヒーター４により
昇温制御しなかったこと以外は、実施の形態１と同様に
行い、被成膜基板３上に膜厚０．４μｍのシリコン酸化
膜を成膜した。(Embodiment 3) The substrate to be film-formed is the same as in Embodiment 1 except that the inner wall surface temperature of the film forming chamber 1 is not controlled by the heater 4 for heating the inner wall of the film forming chamber. A silicon oxide film having a film thickness of 0.4 μm was formed on No. 3.
【００３０】この方法で１０回続けて成膜し、１０回目
に成膜を行った被成膜基板３上に付着した５μｍ以上の
大きさのパーティクル数を測定したところ、０．４個／
ｃｍ2であった。The number of particles having a size of 5 μm or more adhered onto the film-forming substrate 3 on which the film was formed 10 times in succession by this method was measured and found to be 0.4 /
cm2 .
【００３１】（比較例）高周波電力印加用電極７の表面
温度を高周波電力印加用電極加熱ヒーター８により、成
膜チャンバー１の内壁表面温度を成膜チャンバー内壁加
熱ヒーター４により、ともに昇温制御しなかったこと以
外は、実施の形態１と同様に行い、被成膜基板３上に膜
厚０．４μｍのシリコン酸化膜を成膜した。(Comparative Example) The surface temperature of the high frequency power applying electrode 7 is controlled by the high frequency power applying electrode heater 8 and the inner wall surface temperature of the film forming chamber 1 is controlled by the film forming chamber inner wall heater 4. The same procedure as in the first embodiment is carried out except that the silicon oxide film having a thickness of 0.4 μm is formed on the film formation target substrate 3.
【００３２】この方法で１０回続けて成膜し、１０回目
に成膜を行った被成膜基板３上に付着した５μｍ以上の
大きさのパーティクル数を測定したところ、０．８個／
ｃｍ2であった。The number of particles having a size of 5 μm or more adhered to the film-forming substrate 3 on which the film was formed 10 times in succession was measured by this method was 0.8 /
cm2 .
【００３３】実施の形態１乃至実施の形態３及び比較例
について、パーティクルの付着量を表１に示した。Table 1 shows the amount of particles adhering to each of the first to third embodiments and the comparative example.
【００３４】[0034]
【表１】[Table 1]
【００３５】本発明により、被成膜基板３上へのパーテ
ィクルの付着量を大幅に減少させることができた。ま
た、成膜チャンバー１の内壁及び高周波印加用電極７の
表面への、有機シランガスの分解中間生成物である酸化
シリコンの前駆体の堆積量を少なくできた。さらに、こ
の堆積した酸化シリコンの前駆体は、ＯＨ基、ＣＯ基等
の脱離反応が進行し、ほぼ二酸化シリコンとなっている
ことから、四弗化炭素及び三弗化窒素等の一般的なクリ
ーニングガスによるエッチングにより、累積成膜時間の
１〜１．５倍程度の短時間に完全に除去できるようにな
った。According to the present invention, the amount of particles adhering to the film formation substrate 3 can be greatly reduced. Further, the deposition amount of the precursor of silicon oxide, which is a decomposition intermediate product of the organic silane gas, on the inner wall of the film forming chamber 1 and the surface of the high frequency applying electrode 7 can be reduced. Further, since the deposited silicon oxide precursor has almost become silicon dioxide due to the progress of the elimination reaction of OH groups, CO groups, etc., it is generally used as carbon tetrafluoride and nitrogen trifluoride. By the etching with the cleaning gas, the film can be completely removed in a short time of about 1 to 1.5 times the cumulative film forming time.
【００３６】本発明における成膜チャンバー１及び高周
波印加用電極７の加熱手段としては、本実施の形態で示
した構成に限定されるものではない。The heating means for the film forming chamber 1 and the high frequency applying electrode 7 in the present invention is not limited to the configuration shown in the present embodiment.
【００３７】本発明のシリコン酸化膜の成膜方法におい
て使用する有機シランガスとしては、分子中にシリコン
を有する有機性物質であって、プラズマＣＶＤ成膜装置
によって被成膜基板３上にシリコン酸化膜を成膜する際
に用いられるものであれば、特に限定されるものではな
く、望ましくは、テトラエチルオルソシリケイト、ジエ
チルシラン、トリエトキシシラン、テトラエチルシクロ
テトラシロキサン、テトラメチルシクロテトラシロキサ
ンを用いることが好ましい。また、これらの有機シラン
ガスを２種以上混合して用いても構わない。The organic silane gas used in the method for forming a silicon oxide film of the present invention is an organic substance having silicon in the molecule, and the silicon oxide film is formed on the substrate 3 to be formed by the plasma CVD film forming apparatus. It is not particularly limited as long as it is used when forming a film, and it is preferable to use tetraethylorthosilicate, diethylsilane, triethoxysilane, tetraethylcyclotetrasiloxane, and tetramethylcyclotetrasiloxane. . Further, two or more kinds of these organic silane gases may be mixed and used.
【００３８】本発明のシリコン酸化膜の成膜方法におい
て使用する酸化性ガスとしては、特に限定されるもので
はなく、酸素、オゾン含有酸素、亜酸化窒素、二酸化窒
素等を用いることができ、これらの酸化性ガスの混合ガ
スを用いても構わない。The oxidizing gas used in the method for forming a silicon oxide film of the present invention is not particularly limited, and oxygen, ozone-containing oxygen, nitrous oxide, nitrogen dioxide or the like can be used. It is also possible to use a mixed gas of the above oxidizing gases.
【００３９】[0039]
【発明の効果】以上の説明のように、本発明によれば、
成膜チャンバー内壁及び高周波電力印加用電極の少なく
とも一方を加熱しながらシリコン酸化膜の成膜を行うこ
とにより、パーティクルの発生量を大幅に減少させるこ
とができ、良品率を向上させることができる。As described above, according to the present invention,
By forming the silicon oxide film while heating at least one of the inner wall of the film forming chamber and the electrode for applying high-frequency power, it is possible to significantly reduce the amount of generated particles and improve the yield rate.
【００４０】さらに、成膜チャンバー内壁及び高周波電
力印加用電極を、被成膜基板の温度よりも高くなるよう
に加熱することにより、望ましくは、被成膜基板の温度
よりも２０℃乃至１００℃高くなるように加熱すること
により、パーティクルの発生量をより一層減少させるこ
とができ、良品率をより一層向上させることができる。Further, by heating the inner wall of the film forming chamber and the electrode for applying high-frequency power so as to be higher than the temperature of the film forming substrate, it is desirable that the temperature is 20 ° C. to 100 ° C. higher than the temperature of the film forming substrate. By heating so as to raise the temperature, the amount of particles generated can be further reduced, and the yield rate can be further improved.
【００４１】また、成膜チャンバー内壁及び高周波電力
印加用電極へ堆積した酸化シリコンの前駆体は、ほぼシ
リコン酸化膜となるため、四弗化炭素及び三弗化窒素等
の一般的なクリーニングガスを用いたエッチングで容易
に除去することが可能となり、残渣もほとんど残ること
がなくなる。このことから、成膜チャンバー内部のクリ
ーニングに要する時間及び労力を大幅に低減させること
ができ、製造工程のスループットを向上させることがで
きる。Further, since the silicon oxide precursor deposited on the inner wall of the film forming chamber and the electrode for applying high-frequency power becomes almost a silicon oxide film, a general cleaning gas such as carbon tetrafluoride and nitrogen trifluoride is used. It can be easily removed by the etching used, and almost no residue remains. From this, the time and labor required for cleaning the inside of the film forming chamber can be significantly reduced, and the throughput of the manufacturing process can be improved.
【００４２】また、成膜チャンバー内壁及び高周波電力
印加用電極へ堆積する酸化シリコンの前駆体の量が減少
することから、有機シランガスの利用効率が向上し、コ
ストダウンも可能となる。Further, since the amount of the precursor of silicon oxide deposited on the inner wall of the film forming chamber and the electrode for applying high frequency power is reduced, the utilization efficiency of the organic silane gas is improved and the cost can be reduced.
【図１】本発明の実施の形態に係わるプラズマＣＶＤ成
膜装置の説明図である。FIG. 1 is an explanatory diagram of a plasma CVD film forming apparatus according to an embodiment of the present invention.
【図２】従来のプラズマＣＶＤ成膜装置の説明図であ
る。FIG. 2 is an explanatory diagram of a conventional plasma CVD film forming apparatus.
１ 成膜チャンバー ２ 基板ホルダー ３ 被成膜基板 ４ 成膜チャンバー内壁加熱ヒーター ５ 水冷用水管 ６ 上蓋 ７ 高周波電力印加用電極 ８ 高周波電力印加用電極加熱ヒーター ９ 高周波電源 １０ ガス導入管 １１ 排気管 ２１ 成膜チャンバー ２２ 基板ホルダー ２３ 被成膜基板 ２５ 水冷用水管 ２６ 上蓋 ２７ 高周波電力印加用電極 ２９ 高周波電源 ３０ ガス導入管 ３１ 排気管 DESCRIPTION OF REFERENCE NUMERALS 1 film forming chamber 2 substrate holder 3 film forming substrate 4 film forming chamber inner wall heating heater 5 water cooling water pipe 6 upper lid 7 high frequency power applying electrode 8 high frequency power applying electrode heating heater 9 high frequency power supply 10 gas introduction pipe 11 exhaust pipe 21 Deposition chamber 22 Substrate holder 23 Deposition substrate 25 Water cooling water pipe 26 Upper lid 27 High frequency power application electrode 29 High frequency power supply 30 Gas introduction pipe 31 Exhaust pipe
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30428395AJPH09148322A (en) | 1995-11-22 | 1995-11-22 | Silicon oxide film forming method and plasma CVD film forming apparatus |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30428395AJPH09148322A (en) | 1995-11-22 | 1995-11-22 | Silicon oxide film forming method and plasma CVD film forming apparatus |
| Publication Number | Publication Date |
|---|---|
| JPH09148322Atrue JPH09148322A (en) | 1997-06-06 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30428395APendingJPH09148322A (en) | 1995-11-22 | 1995-11-22 | Silicon oxide film forming method and plasma CVD film forming apparatus |
| Country | Link |
|---|---|
| JP (1) | JPH09148322A (en) |
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