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JPH08181135A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JPH08181135A
JPH08181135AJP6320786AJP32078694AJPH08181135AJP H08181135 AJPH08181135 AJP H08181135AJP 6320786 AJP6320786 AJP 6320786AJP 32078694 AJP32078694 AJP 32078694AJP H08181135 AJPH08181135 AJP H08181135A
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film
insulating film
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English (en)
Inventor
Takeaki Sugano
壮晃 菅野
Yukihiko Nishiyama
幸彦 西山
Hideji Fujii
秀治 藤井
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Sharp Corp
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Sharp Corp
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Abstract

(57)【要約】【目的】 絶縁性が高く、かつ、界面付近での漏れ電流
の少ない高絶縁性誘電体膜を有する半導体装置の製造方
法を提供する。【構成】 成膜された酸化絶縁膜に対して１０００℃以
下の温度で、最初に水蒸気と酸素との混合ガスによる酸
化する。これにより、膜表面には可動イオンが残留した
状態となる。次に、その残留イオンを除去するために、
熱酸化プロセスを施す。このようにすることにより、酸
化絶縁膜の内層部の酸化の促進と、膜表層部の絶縁性の
向上が行われる。よって、耐圧特性に優れ、表面に漏れ
電流の少ない高絶縁性誘電膜が得られる。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、半導体装置の製造方法
に関し、特に高絶縁性誘電膜を有する半導体装置の製造
方法に関する。
【０００２】
【従来の技術】半導体装置や液晶表示装置においては、
回路の絶縁性を確保するために、または半導体メモリー
の記憶容量やアクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘導体用に、例えば酸化シリコン、
窒化シリコン、酸化アルミニウムまたは酸化タンタルの
ような絶縁膜または誘電体膜が使用されている。
【０００３】近年、半導体装置の高密度化や高集積化、
また液晶表示装置の高精細化が進むにつれ、その構成要
素の１つである、絶縁膜もしくは誘電体膜の微細化が課
題となる。上記微細化を行った場合は、誘電体の面積が
減少することになるが、当然それに伴って静電容量も減
少する。したがって、同等の静電容量を得るためには、
誘電体の膜厚を薄くするか誘電体の誘電率を上げなけれ
ばならない。しかしながら、膜厚を薄くすると耐圧が低
下するため、信頼性の問題から薄膜化には限界がある。
【０００４】そこで、例えば高誘電率の酸化タンタルが
注目されている。この酸化タンタル膜は、その製造方法
として、例えば陽極酸化法などを用いる場合は、電子性
トラップや可動イオンの空間電荷分極の存在により、酸
化シリコン膜等に比べ漏れ電流も多く絶縁性が悪いこと
が知られている。また、製造方法に反応性スパッタ法を
用いる場合では、低級酸化物の増加により漏れ電流が増
加することが知られている。
【０００５】そのため、この酸化タンタル膜を半導体メ
モリーの記憶容量に用いた場合は消費電力の増加をもた
らし、また、アクティブマトリクス方式の液晶表示装置
の画素の補助容量の誘電体もしくはガラス基板の保護絶
縁膜として用いた場合には表示不良につながるといった
不具合が生じてしまう。
【０００６】一方、酸化タンタルをはじめとして酸化ア
ルミニウムなどの金属酸化膜に対し、より高い絶縁性を
比較的簡単に与える試みとして、絶縁性誘電膜を成膜し
た後の後処理に熱酸化を用いる方法がある。
【０００７】
【発明が解決しようとする課題】上記の熱酸化法は、１
０００℃以下の温度で水蒸気を含む混合ガスによる熱酸
化方法（以後ウェット焼成と記す）と、上記ウェット焼
成において水蒸気の導入は行わずに乾燥ガスのみで熱酸
化を行う熱酸化法（以後ドライ焼成と記す）の２つに大
別される。このようなウェット焼成とドライ焼成とは、
従来においては、一般に熱酸化を行うとき、いずれか一
方が採用されている。
【０００８】しかしながら、ウェット焼成を行う場合
は、酸素の空孔欠陥を補う酸化種がドライ焼成に比べて
絶縁膜に対し高い拡散速度をもっているため、膜の内層
部まで酸素の補給を促進できるが、膜の表層部に可動イ
オンが残留しやすく、膜そのものの絶縁性は向上する
が、膜表層部の絶縁性を保つことができず、その上に成
膜を施した場合、膜の界面での漏れ電流が増加してしま
うという不具合が生じてしまう。
【０００９】一方、ドライ焼成を行う場合は、酸化種の
膜に対する拡散速度が低下するため、膜内層部の酸素の
補給が不完全なものとなる。そのため、膜全体としての
絶縁性が低下し耐圧特性も悪くなる。
【００１０】本発明は、このような従来技術の課題を解
決すべくなされたものであり、絶縁性が高く、かつ、界
面付近での漏れ電流の少ない高絶縁性誘電体膜を有する
半導体装置の製造方法を提供することを目的とする。
【００１１】
【課題を解決するための手段】本発明の半導体装置の製
造方法は、基板上に形成した酸化絶縁膜を、１０００℃
以下の温度で水蒸気と酸素とを含む混合ガスにより酸化
する工程と、酸化された酸化絶縁膜に存在する残留イオ
ンを除去して高絶縁性誘電膜にする工程とを具備し、そ
のことにより上記目的が達成される。
【００１２】
【作用】本発明にあっては、成膜された酸化絶縁膜に対
して１０００℃以下の温度で、最初に水蒸気と酸素との
混合ガスによる酸化する。これにより、膜表面には可動
イオンが残留した状態となる。次に、その残留イオンを
除去するために、熱酸化プロセスを施す。このようにす
ることにより、酸化絶縁膜の内層部の酸化の促進と、膜
表層部の絶縁性の向上が行われる。よって、耐圧特性に
優れ、表面に漏れ電流の少ない高絶縁性誘電膜が得られ
る。
【００１３】
【実施例】以下に、本発明の実施例を具体的に説明す
る。
【００１４】本発明の適用例として、例えば液晶表示装
置のガラス基板上に設けられる薄膜トランジスタにおい
て、そのガラス基板上にベースコート絶縁膜が設けられ
る場合を一例に挙げて述べる。この場合、液晶表示装置
の表示品位を向上させるためには、そのベースコート絶
縁膜の性能として、ベースコート絶縁膜上に形成された
電極間の漏れ電流を防止し得るだけの絶縁性が要求され
る。
【００１５】そこで、上記の内容を考慮し、ベースコー
ト絶縁膜に酸化タンタルと酸化アルミニウムとを用いた
ときの適用例を以下の実施例１と実施例２として記述す
る。 （実施例１）本実施例１は、ベースコート絶縁膜が酸化
タンタルの場合である。
【００１６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより五酸化タンタルを３０００〜４０００
オングストローム形成したものを用いた。その基板に対
し、図１に示す本発明の熱処理を施した。具体的には、
常温から酸化タンタルが多結晶化を起こさない５００〜
６００℃まで昇温する間において、１５０℃〜６００℃
の間（図１におけるの期間）で水蒸気と酸素との混合
ガスを焼成炉の中に導入し、その後、その高温状態を１
〜２時間保持する間（図１におけるの期間）に、連続
して酸素の乾燥ガスを焼成炉の中に導入して焼成を行っ
た。その後、常温まで冷却を行った。
【００１７】また、比較例として、本実施例１と同様の
炉内温度に変化させた状態で、図２に示すようにしてウ
ェット焼成を行い、図３に示すようにしてドライ焼成を
行った。ウェット焼成は、１５０〜６００℃の間（図２
におけるの期間）で水蒸気と酸素との混合ガスを焼成
炉の中に導入して焼成を行った。一方、ドライ焼成は、
１５０〜６００℃の間（図３におけるの期間）で酸素
の乾燥ガスを焼成炉の中に導入して焼成を行った。
【００１８】次に、以上のようにしてガラス基板上に形
成された、本発明を含めた３種のベースコート絶縁膜の
上に、図４に示すように、電極３と絶縁膜４と電極５と
をベースコート絶縁膜２側からこの順に形成し、第１の
評価を行った。なお、図４中の１は、ガラス基板であ
る。その第１の評価としては、電極３と５に２０Ｖの電
圧を加えたときのリーク電流を測定した。この測定は、
評価対象のベースコート絶縁膜２と絶縁膜３との界面の
絶縁性、つまりベースコート絶縁膜２の表層部の絶縁特
性に関するものであり、この部分のリーク電流が時間に
対し大幅な増加傾向を示すと、絵素の補助容量電極等と
のリークを引き起こし表示不良の原因となる。
【００１９】図５は、そのリーク電流の測定結果を示す
グラフである。横軸に時間Ｔ（ｈｏｕｒ）をとり、縦軸
に電流Ｉ（Ａ／ｍｍ2）をとっている。図中の（ａ）は
ウェット焼成の場合、（ｂ）は本実施例の場合、（ｃ）
はドライ焼成の場合である。
【００２０】リーク電流の変化を見ると、本実施例によ
る処理では、ドライ焼成とほぼ同等のレベルでリーク電
流が減少傾向を示しており、水蒸気と酸素との混合ガス
を導入したことによる、膜表層部における可動イオンの
残留がないことがわかる。
【００２１】更に、図６に示すような液晶パネルを作製
して第２の評価を行った。この液晶パネルは、上記ガラ
ス基板１の上に形成されたベースコート絶縁膜２の上
に、電極１３、二層の絶縁膜１４と１５および配向膜１
６を形成したものと、別のガラス基板１の上に電極１８
と配向膜１６とがこの順に形成されたものとを、間に液
晶材料１７を挟んで対向配設した構造である。第２の評
価の内容としては、液晶材料１７の電流効果を利用して
電極１３と１８との間に０秒から３０秒まで−４Ｖの電
圧を印加し、３０秒から１００秒まで電圧を印加せずに
放置した時の、隣合う電極１３同士の間にチャージされ
る電荷について定性的に評価を行った。つまり、評価対
象であるベースコート絶縁膜２の絶縁性が低いと、隣合
う電極１３同士の間にリーク電流が生じ電荷がチャージ
されることにより、図６中に示す透過率測定領域にも電
圧がかかることになり、液晶の透過率に変化が起こる。
このような電荷のチャージが起こると、液晶の異常配向
の原因となる可能性が高く、表示不良につながることが
ある。
【００２２】図７は、その評価結果を示すグラフであ
り、（ａ）はウェット焼成の場合、（ｂ）は本実施例の
場合、（ｃ）はドライ焼成の場合である。
【００２３】測定結果より、本実施例の焼成条件では透
過率に変化は起こっていない。これは隣合う電極１３同
士の間に電荷のチャージが起きず、ウェット焼成と同レ
ベル程度まで膜内層部の酸素の補給が促進したといえ
る。
【００２４】以上の２種類の第１、第２の評価の結果よ
り、本実施例による場合には、酸化絶縁膜の膜内層部の
酸素補給の促進と共に、膜表層部の可動イオンの除去を
行うことが可能となる。したがって、本発明は画期的な
方法といえる。
【００２５】（実施例２）本実施例２は、ベースコート
絶縁膜が酸化アルミニウムの場合である。
【００２６】サンプルとしては、ガラス基板上に、スパ
ッタリングにより酸化アルミニウムを３０００〜４００
０オングストローム形成したものを用いた。その基板に
対し、実施例１と同様にして本発明を含む３種類の焼成
を施した。その後、以上のように焼成を行ったものに対
し、実施例１と同様の２種類の第１、第２の評価を行っ
た。
【００２７】図８は、図４に示した状態で第１の評価を
行った結果であり、図９は図６に示した液晶パネルにし
た状態で第２の評価を行った結果である。両図とも、
（ａ）がウェット焼成の場合、（ｂ）が本実施例２の場
合、（ｃ）がドライ焼成の場合である。
【００２８】これら図８および図９より理解されるよう
に、酸化タンタルの場合と同様に本発明の優位性がうか
がえる。
【００２９】なお、上記各実施例において焼成炉の最高
加熱温度を６００℃としているが、これはガラス基板の
歪点からくる耐加熱温度と、金属酸化膜が非晶質から多
結晶化が起こらないための最高温度を考慮したからであ
り、本発明は基板の耐加熱温度がもっと高い場合、かつ
膜の結晶化が起こる温度を上げる処理を施した場合によ
り高い加熱温度で加熱することが可能となる。その場合
でも、加熱温度は１０００℃以下に限定する。その理由
は、生産上のボトルネックとなる昇温、降温に要する時
間をできるだけ削減し装置処理能力を向上させること
と、プロセスにおける消費エネルギーの増大を防ぐこと
で生産コストの低減を図るためである。
【００３０】また、上記各実施例において、残留イオン
を除去する処理方法として酸素ガスを導入する方法を用
いているが、ＵＶオゾン処理や酸素プラズマ処理などの
方法も採用することが可能である。但し、それに伴う装
置および運用コストの増加や処理プロセスの複雑化とい
う点で考慮すると、上述した各実施例のように単純焼成
を基本プロセスとして用いる場合の方が上記の点での優
位性が認められる。
【００３１】また、上記各実施例では液晶表示装置のガ
ラス基板上に設けられる薄膜トランジスタにおいて、そ
のガラス基板上にベースコート絶縁膜が設けられる場合
を一例に挙げて説明しているが、本発明はこの例に限ら
ず、基板上に形成された絶縁膜が高絶縁性を必要とする
総ての場合に適用できる。
【００３２】
【発明の効果】以上詳述したように本発明による場合に
は、酸化絶縁膜形成後の後処理として１０００℃以下の
温度で水蒸気と酸素とを含む混合ガスにより酸化する工
程と、残留イオンを除去する工程とを連続して行うこと
により、従来の熱酸化法では得られなかった、膜表層部
に残留可動イオンがなく、膜内層部の空孔欠陥を十分に
酸素で補った高絶縁性の酸化絶縁膜が、比較的簡単な方
法によって得られるという効果がある。従って、本発明
によれば、酸化絶縁膜を有した半導体装置をはじめ、半
導体装置を有した液晶表示装置の品質および製造歩留り
を比較的容易に、かつ、より単純なプロセスで向上させ
ることができる。
【図面の簡単な説明】
【図１】本実施例１および２により、酸化絶縁膜に対し
て焼成を行った時の温度プロファイルとガス導入時期と
を示すグラフである。
【図２】従来法であるウェット焼成により、酸化絶縁膜
に対して焼成を行った時の温度プロファイルとガス導入
時期とを示すグラフである。
【図３】従来法であるドライ焼成により、酸化絶縁膜に
対して焼成を行った時の温度プロファイルとガス導入時
期とを示すグラフである。
【図４】実施例１および２において、第１の評価を行う
場合の構成を示す断面図であり、ベースコート絶縁膜２
の表層部の漏れ電流の測定系を示す。
【図５】実施例１における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化タンタルからなるベースコート絶縁膜
２の表層を流れる漏れ電流の経時変化を示すグラフであ
る。
【図６】実施例１および２において、第２の評価を行う
場合の構成である液晶パネルを示す断面図であり、隣合
う電極１３同士の間にチャージされる電荷について、液
晶材料の電流効果による光の散乱を利用して定性評価を
行う測定系を示す。
【図７】実施例１（ベースコート絶縁膜が酸化タンタ
ル）における第２の評価結果であり、図６の電極１３と
１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を印
加し、３０秒から１００秒まで電圧を印加せずに放置し
たときの、０秒から１００秒までの図６中の透過率測定
領域の透過率の経時変化を示したグラフである。
【図８】実施例２における第１の評価結果であり、図４
中の電極３と５に２０ＶのＤＣ電圧を印加したときの評
価対象である酸化アルミニウムからなるベースコート絶
縁膜２の表層を流れる漏れ電流の経時変化を示すグラフ
である。
【図９】実施例２（ベースコート絶縁膜が酸化アルミニ
ウム）における第２の評価結果であり、図６の電極１３
と１８との間に０秒から３０秒まで−４ＶのＤＣ電圧を
印加し、３０秒から１００秒まで電圧を印加せずに放置
したときの、０秒から１００秒までの図６中の透過率測
定領域の透過率の経時変化を示したグラフである。
【符号の説明】
１ ガラス基板 ２ ベースコート絶縁膜 ３ 電極 ４ 絶縁膜 ５ 電極 １３ 電極 １４ 絶縁膜 １５ 絶縁膜 １６ 配向膜 １７ 液晶材料 １８ 電極

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 基板上に形成した酸化絶縁膜を、１００
    ０℃以下の温度で水蒸気と酸素とを含む混合ガスにより
    酸化する工程と、 酸化された酸化絶縁膜に存在する残留イオンを除去して
    高絶縁性誘電膜にする工程とを具備する半導体装置の製
    造方法。
JP6320786A1994-12-221994-12-22半導体装置の製造方法WithdrawnJPH08181135A (ja)

Priority Applications (3)

Application NumberPriority DateFiling DateTitle
JP6320786AJPH08181135A (ja)1994-12-221994-12-22半導体装置の製造方法
KR1019950072368AKR960026379A (ko)1994-12-221995-12-21반도체장치의 제조방법
CN95110000ACN1131343A (zh)1994-12-221995-12-22制造半导体器件的方法

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP6320786AJPH08181135A (ja)1994-12-221994-12-22半導体装置の製造方法

Publications (1)

Publication NumberPublication Date
JPH08181135Atrue JPH08181135A (ja)1996-07-12

Family

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Family Applications (1)

Application NumberTitlePriority DateFiling Date
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Country Status (3)

CountryLink
JP (1)JPH08181135A (ja)
KR (1)KR960026379A (ja)
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* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
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US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US11069510B2 (en)2017-08-302021-07-20Asm Ip Holding B.V.Substrate processing apparatus
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US11114294B2 (en)2019-03-082021-09-07Asm Ip Holding B.V.Structure including SiOC layer and method of forming same
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
USD930782S1 (en)2019-08-222021-09-14Asm Ip Holding B.V.Gas distributor
US11127617B2 (en)2017-11-272021-09-21Asm Ip Holding B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11127589B2 (en)2019-02-012021-09-21Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
USD931978S1 (en)2019-06-272021-09-28Asm Ip Holding B.V.Showerhead vacuum transport
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139308B2 (en)2015-12-292021-10-05Asm Ip Holding B.V.Atomic layer deposition of III-V compounds to form V-NAND devices
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11171025B2 (en)2019-01-222021-11-09Asm Ip Holding B.V.Substrate processing device
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
US11205585B2 (en)2016-07-282021-12-21Asm Ip Holding B.V.Substrate processing apparatus and method of operating the same
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
USD940837S1 (en)2019-08-222022-01-11Asm Ip Holding B.V.Electrode
US11222772B2 (en)2016-12-142022-01-11Asm Ip Holding B.V.Substrate processing apparatus
US11227782B2 (en)2019-07-312022-01-18Asm Ip Holding B.V.Vertical batch furnace assembly
US11227789B2 (en)2019-02-202022-01-18Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11251040B2 (en)2019-02-202022-02-15Asm Ip Holding B.V.Cyclical deposition method including treatment step and apparatus for same
US11251068B2 (en)2018-10-192022-02-15Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
USD944946S1 (en)2019-06-142022-03-01Asm Ip Holding B.V.Shower plate
US11270899B2 (en)2018-06-042022-03-08Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11274369B2 (en)2018-09-112022-03-15Asm Ip Holding B.V.Thin film deposition method
US11282698B2 (en)2019-07-192022-03-22Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US11286558B2 (en)2019-08-232022-03-29Asm Ip Holding B.V.Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
USD949319S1 (en)2019-08-222022-04-19Asm Ip Holding B.V.Exhaust duct
US11315794B2 (en)2019-10-212022-04-26Asm Ip Holding B.V.Apparatus and methods for selectively etching films
US11339476B2 (en)2019-10-082022-05-24Asm Ip Holding B.V.Substrate processing device having connection plates, substrate processing method
US11342216B2 (en)2019-02-202022-05-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11345999B2 (en)2019-06-062022-05-31Asm Ip Holding B.V.Method of using a gas-phase reactor system including analyzing exhausted gas
US11355338B2 (en)2019-05-102022-06-07Asm Ip Holding B.V.Method of depositing material onto a surface and structure formed according to the method
US11361990B2 (en)2018-05-282022-06-14Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11378337B2 (en)2019-03-282022-07-05Asm Ip Holding B.V.Door opener and substrate processing apparatus provided therewith
US11390945B2 (en)2019-07-032022-07-19Asm Ip Holding B.V.Temperature control assembly for substrate processing apparatus and method of using same
US11393690B2 (en)2018-01-192022-07-19Asm Ip Holding B.V.Deposition method
US11390946B2 (en)2019-01-172022-07-19Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390950B2 (en)2017-01-102022-07-19Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
US11401605B2 (en)2019-11-262022-08-02Asm Ip Holding B.V.Substrate processing apparatus
US11414760B2 (en)2018-10-082022-08-16Asm Ip Holding B.V.Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US11424119B2 (en)2019-03-082022-08-23Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11430640B2 (en)2019-07-302022-08-30Asm Ip Holding B.V.Substrate processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11437241B2 (en)2020-04-082022-09-06Asm Ip Holding B.V.Apparatus and methods for selectively etching silicon oxide films
US11443926B2 (en)2019-07-302022-09-13Asm Ip Holding B.V.Substrate processing apparatus
US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
USD965044S1 (en)2019-08-192022-09-27Asm Ip Holding B.V.Susceptor shaft
USD965524S1 (en)2019-08-192022-10-04Asm Ip Holding B.V.Susceptor support
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11476109B2 (en)2019-06-112022-10-18Asm Ip Holding B.V.Method of forming an electronic structure using reforming gas, system for performing the method, and structure formed using the method
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US11488854B2 (en)2020-03-112022-11-01Asm Ip Holding B.V.Substrate handling device with adjustable joints
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11495459B2 (en)2019-09-042022-11-08Asm Ip Holding B.V.Methods for selective deposition using a sacrificial capping layer
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11501968B2 (en)2019-11-152022-11-15Asm Ip Holding B.V.Method for providing a semiconductor device with silicon filled gaps
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11515187B2 (en)2020-05-012022-11-29Asm Ip Holding B.V.Fast FOUP swapping with a FOUP handler
US11521851B2 (en)2020-02-032022-12-06Asm Ip Holding B.V.Method of forming structures including a vanadium or indium layer
US11527403B2 (en)2019-12-192022-12-13Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11527400B2 (en)2019-08-232022-12-13Asm Ip Holding B.V.Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane
US11530876B2 (en)2020-04-242022-12-20Asm Ip Holding B.V.Vertical batch furnace assembly comprising a cooling gas supply
US11532757B2 (en)2016-10-272022-12-20Asm Ip Holding B.V.Deposition of charge trapping layers
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US11551912B2 (en)2020-01-202023-01-10Asm Ip Holding B.V.Method of forming thin film and method of modifying surface of thin film
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
US11557474B2 (en)2019-07-292023-01-17Asm Ip Holding B.V.Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
US11562901B2 (en)2019-09-252023-01-24Asm Ip Holding B.V.Substrate processing method
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11587814B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
US11587815B2 (en)2019-07-312023-02-21Asm Ip Holding B.V.Vertical batch furnace assembly
USD979506S1 (en)2019-08-222023-02-28Asm Ip Holding B.V.Insulator
US11594450B2 (en)2019-08-222023-02-28Asm Ip Holding B.V.Method for forming a structure with a hole
US11594600B2 (en)2019-11-052023-02-28Asm Ip Holding B.V.Structures with doped semiconductor layers and methods and systems for forming same
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
US11605528B2 (en)2019-07-092023-03-14Asm Ip Holding B.V.Plasma device using coaxial waveguide, and substrate treatment method
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
US11610774B2 (en)2019-10-022023-03-21Asm Ip Holding B.V.Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process
US11615970B2 (en)2019-07-172023-03-28Asm Ip Holding B.V.Radical assist ignition plasma system and method
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
US11626308B2 (en)2020-05-132023-04-11Asm Ip Holding B.V.Laser alignment fixture for a reactor system
US11626316B2 (en)2019-11-202023-04-11Asm Ip Holding B.V.Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11637014B2 (en)2019-10-172023-04-25Asm Ip Holding B.V.Methods for selective deposition of doped semiconductor material
US11637011B2 (en)2019-10-162023-04-25Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11639548B2 (en)2019-08-212023-05-02Asm Ip Holding B.V.Film-forming material mixed-gas forming device and film forming device
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US11644758B2 (en)2020-07-172023-05-09Asm Ip Holding B.V.Structures and methods for use in photolithography
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11646184B2 (en)2019-11-292023-05-09Asm Ip Holding B.V.Substrate processing apparatus
US11646205B2 (en)2019-10-292023-05-09Asm Ip Holding B.V.Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same
US11643724B2 (en)2019-07-182023-05-09Asm Ip Holding B.V.Method of forming structures using a neutral beam
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11664245B2 (en)2019-07-162023-05-30Asm Ip Holding B.V.Substrate processing device
US11664267B2 (en)2019-07-102023-05-30Asm Ip Holding B.V.Substrate support assembly and substrate processing device including the same
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US11680839B2 (en)2019-08-052023-06-20Asm Ip Holding B.V.Liquid level sensor for a chemical source vessel
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11688603B2 (en)2019-07-172023-06-27Asm Ip Holding B.V.Methods of forming silicon germanium structures
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
US11705333B2 (en)2020-05-212023-07-18Asm Ip Holding B.V.Structures including multiple carbon layers and methods of forming and using same
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US11735422B2 (en)2019-10-102023-08-22Asm Ip Holding B.V.Method of forming a photoresist underlayer and structure including same
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11776846B2 (en)2020-02-072023-10-03Asm Ip Holding B.V.Methods for depositing gap filling fluids and related systems and devices
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11781243B2 (en)2020-02-172023-10-10Asm Ip Holding B.V.Method for depositing low temperature phosphorous-doped silicon
US11804364B2 (en)2020-05-192023-10-31Asm Ip Holding B.V.Substrate processing apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11821078B2 (en)2020-04-152023-11-21Asm Ip Holding B.V.Method for forming precoat film and method for forming silicon-containing film
US11823866B2 (en)2020-04-022023-11-21Asm Ip Holding B.V.Thin film forming method
US11823876B2 (en)2019-09-052023-11-21Asm Ip Holding B.V.Substrate processing apparatus
US11830738B2 (en)2020-04-032023-11-28Asm Ip Holding B.V.Method for forming barrier layer and method for manufacturing semiconductor device
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11828707B2 (en)2020-02-042023-11-28Asm Ip Holding B.V.Method and apparatus for transmittance measurements of large articles
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US11840761B2 (en)2019-12-042023-12-12Asm Ip Holding B.V.Substrate processing apparatus
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11876356B2 (en)2020-03-112024-01-16Asm Ip Holding B.V.Lockout tagout assembly and system and method of using same
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
US11885013B2 (en)2019-12-172024-01-30Asm Ip Holding B.V.Method of forming vanadium nitride layer and structure including the vanadium nitride layer
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US11887857B2 (en)2020-04-242024-01-30Asm Ip Holding B.V.Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US11898243B2 (en)2020-04-242024-02-13Asm Ip Holding B.V.Method of forming vanadium nitride-containing layer
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US11915929B2 (en)2019-11-262024-02-27Asm Ip Holding B.V.Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface
US11923181B2 (en)2019-11-292024-03-05Asm Ip Holding B.V.Substrate processing apparatus for minimizing the effect of a filling gas during substrate processing
US11929251B2 (en)2019-12-022024-03-12Asm Ip Holding B.V.Substrate processing apparatus having electrostatic chuck and substrate processing method
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US11959168B2 (en)2020-04-292024-04-16Asm Ip Holding B.V.Solid source precursor vessel
US11961741B2 (en)2020-03-122024-04-16Asm Ip Holding B.V.Method for fabricating layer structure having target topological profile
US11967488B2 (en)2013-02-012024-04-23Asm Ip Holding B.V.Method for treatment of deposition reactor
US11976359B2 (en)2020-01-062024-05-07Asm Ip Holding B.V.Gas supply assembly, components thereof, and reactor system including same
US11987881B2 (en)2020-05-222024-05-21Asm Ip Holding B.V.Apparatus for depositing thin films using hydrogen peroxide
US11986868B2 (en)2020-02-282024-05-21Asm Ip Holding B.V.System dedicated for parts cleaning
US11996289B2 (en)2020-04-162024-05-28Asm Ip Holding B.V.Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods
US11996292B2 (en)2019-10-252024-05-28Asm Ip Holding B.V.Methods for filling a gap feature on a substrate surface and related semiconductor structures
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11993847B2 (en)2020-01-082024-05-28Asm Ip Holding B.V.Injector
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12006572B2 (en)2019-10-082024-06-11Asm Ip Holding B.V.Reactor system including a gas distribution assembly for use with activated species and method of using same
US12009241B2 (en)2019-10-142024-06-11Asm Ip Holding B.V.Vertical batch furnace assembly with detector to detect cassette
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US12033885B2 (en)2020-01-062024-07-09Asm Ip Holding B.V.Channeled lift pin
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US12057314B2 (en)2020-05-152024-08-06Asm Ip Holding B.V.Methods for silicon germanium uniformity control using multiple precursors
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12087586B2 (en)2020-04-152024-09-10Asm Ip Holding B.V.Method of forming chromium nitride layer and structure including the chromium nitride layer
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12112940B2 (en)2019-07-192024-10-08Asm Ip Holding B.V.Method of forming topology-controlled amorphous carbon polymer film
US12125700B2 (en)2020-01-162024-10-22Asm Ip Holding B.V.Method of forming high aspect ratio features
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
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Cited By (502)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US10378106B2 (en)2008-11-142019-08-13Asm Ip Holding B.V.Method of forming insulation film by modified PEALD
US9394608B2 (en)2009-04-062016-07-19Asm America, Inc.Semiconductor processing reactor and components thereof
US10844486B2 (en)2009-04-062020-11-24Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10480072B2 (en)2009-04-062019-11-19Asm Ip Holding B.V.Semiconductor processing reactor and components thereof
US10804098B2 (en)2009-08-142020-10-13Asm Ip Holding B.V.Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8465811B2 (en)2011-01-282013-06-18Asm Japan K.K.Method of depositing film by atomic layer deposition with pulse-time-modulated plasma
US10707106B2 (en)2011-06-062020-07-07Asm Ip Holding B.V.High-throughput semiconductor-processing apparatus equipped with multiple dual-chamber modules
US9793148B2 (en)2011-06-222017-10-17Asm Japan K.K.Method for positioning wafers in multiple wafer transport
US10364496B2 (en)2011-06-272019-07-30Asm Ip Holding B.V.Dual section module having shared and unshared mass flow controllers
US10854498B2 (en)2011-07-152020-12-01Asm Ip Holding B.V.Wafer-supporting device and method for producing same
US11725277B2 (en)2011-07-202023-08-15Asm Ip Holding B.V.Pressure transmitter for a semiconductor processing environment
US10832903B2 (en)2011-10-282020-11-10Asm Ip Holding B.V.Process feed management for semiconductor substrate processing
US9892908B2 (en)2011-10-282018-02-13Asm America, Inc.Process feed management for semiconductor substrate processing
US9384987B2 (en)2012-04-042016-07-05Asm Ip Holding B.V.Metal oxide protective layer for a semiconductor device
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US9647114B2 (en)2015-08-142017-05-09Asm Ip Holding B.V.Methods of forming highly p-type doped germanium tin films and structures and devices including the films
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US10714350B2 (en)2016-11-012020-07-14ASM IP Holdings, B.V.Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
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US10134757B2 (en)2016-11-072018-11-20Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by using the method
US10934619B2 (en)2016-11-152021-03-02Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US11396702B2 (en)2016-11-152022-07-26Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including the gas supply unit
US10340135B2 (en)2016-11-282019-07-02Asm Ip Holding B.V.Method of topologically restricted plasma-enhanced cyclic deposition of silicon or metal nitride
US11222772B2 (en)2016-12-142022-01-11Asm Ip Holding B.V.Substrate processing apparatus
US11581186B2 (en)2016-12-152023-02-14Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US9916980B1 (en)2016-12-152018-03-13Asm Ip Holding B.V.Method of forming a structure on a substrate
US11851755B2 (en)2016-12-152023-12-26Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US12000042B2 (en)2016-12-152024-06-04Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11447861B2 (en)2016-12-152022-09-20Asm Ip Holding B.V.Sequential infiltration synthesis apparatus and a method of forming a patterned structure
US11970766B2 (en)2016-12-152024-04-30Asm Ip Holding B.V.Sequential infiltration synthesis apparatus
US11001925B2 (en)2016-12-192021-05-11Asm Ip Holding B.V.Substrate processing apparatus
US10784102B2 (en)2016-12-222020-09-22Asm Ip Holding B.V.Method of forming a structure on a substrate
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US12043899B2 (en)2017-01-102024-07-23Asm Ip Holding B.V.Reactor system and method to reduce residue buildup during a film deposition process
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US11410851B2 (en)2017-02-152022-08-09Asm Ip Holding B.V.Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures
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US11848200B2 (en)2017-05-082023-12-19Asm Ip Holding B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10892156B2 (en)2017-05-082021-01-12Asm Ip Holding B.V.Methods for forming a silicon nitride film on a substrate and related semiconductor device structures
US10770286B2 (en)2017-05-082020-09-08Asm Ip Holdings B.V.Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures
US10504742B2 (en)2017-05-312019-12-10Asm Ip Holding B.V.Method of atomic layer etching using hydrogen plasma
US10886123B2 (en)2017-06-022021-01-05Asm Ip Holding B.V.Methods for forming low temperature semiconductor layers and related semiconductor device structures
US12040200B2 (en)2017-06-202024-07-16Asm Ip Holding B.V.Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus
US11306395B2 (en)2017-06-282022-04-19Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US11976361B2 (en)2017-06-282024-05-07Asm Ip Holding B.V.Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus
US10685834B2 (en)2017-07-052020-06-16Asm Ip Holdings B.V.Methods for forming a silicon germanium tin layer and related semiconductor device structures
US11695054B2 (en)2017-07-182023-07-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US10734497B2 (en)2017-07-182020-08-04Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11164955B2 (en)2017-07-182021-11-02Asm Ip Holding B.V.Methods for forming a semiconductor device structure and related semiconductor device structures
US11018002B2 (en)2017-07-192021-05-25Asm Ip Holding B.V.Method for selectively depositing a Group IV semiconductor and related semiconductor device structures
US11004977B2 (en)2017-07-192021-05-11Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US12363960B2 (en)2017-07-192025-07-15Asm Ip Holding B.V.Method for depositing a Group IV semiconductor and related semiconductor device structures
US11374112B2 (en)2017-07-192022-06-28Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US10541333B2 (en)2017-07-192020-01-21Asm Ip Holding B.V.Method for depositing a group IV semiconductor and related semiconductor device structures
US11802338B2 (en)2017-07-262023-10-31Asm Ip Holding B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US10312055B2 (en)2017-07-262019-06-04Asm Ip Holding B.V.Method of depositing film by PEALD using negative bias
US10605530B2 (en)2017-07-262020-03-31Asm Ip Holding B.V.Assembly of a liner and a flange for a vertical furnace as well as the liner and the vertical furnace
US10590535B2 (en)2017-07-262020-03-17Asm Ip Holdings B.V.Chemical treatment, deposition and/or infiltration apparatus and method for using the same
US12276023B2 (en)2017-08-042025-04-15Asm Ip Holding B.V.Showerhead assembly for distributing a gas within a reaction chamber
US10692741B2 (en)2017-08-082020-06-23Asm Ip Holdings B.V.Radiation shield
US11587821B2 (en)2017-08-082023-02-21Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US11417545B2 (en)2017-08-082022-08-16Asm Ip Holding B.V.Radiation shield
US10770336B2 (en)2017-08-082020-09-08Asm Ip Holding B.V.Substrate lift mechanism and reactor including same
US10249524B2 (en)2017-08-092019-04-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US11769682B2 (en)2017-08-092023-09-26Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US11139191B2 (en)2017-08-092021-10-05Asm Ip Holding B.V.Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith
US10672636B2 (en)2017-08-092020-06-02Asm Ip Holding B.V.Cassette holder assembly for a substrate cassette and holding member for use in such assembly
US10236177B1 (en)2017-08-222019-03-19ASM IP Holding B.V..Methods for depositing a doped germanium tin semiconductor and related semiconductor device structures
USD900036S1 (en)2017-08-242020-10-27Asm Ip Holding B.V.Heater electrical connector and adapter
US11830730B2 (en)2017-08-292023-11-28Asm Ip Holding B.V.Layer forming method and apparatus
US11295980B2 (en)2017-08-302022-04-05Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11056344B2 (en)2017-08-302021-07-06Asm Ip Holding B.V.Layer forming method
US11581220B2 (en)2017-08-302023-02-14Asm Ip Holding B.V.Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures
US11069510B2 (en)2017-08-302021-07-20Asm Ip Holding B.V.Substrate processing apparatus
US11993843B2 (en)2017-08-312024-05-28Asm Ip Holding B.V.Substrate processing apparatus
US10607895B2 (en)2017-09-182020-03-31Asm Ip Holdings B.V.Method for forming a semiconductor device structure comprising a gate fill metal
US10928731B2 (en)2017-09-212021-02-23Asm Ip Holding B.V.Method of sequential infiltration synthesis treatment of infiltrateable material and structures and devices formed using same
US10844484B2 (en)2017-09-222020-11-24Asm Ip Holding B.V.Apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US10658205B2 (en)2017-09-282020-05-19Asm Ip Holdings B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US11387120B2 (en)2017-09-282022-07-12Asm Ip Holding B.V.Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber
US10403504B2 (en)2017-10-052019-09-03Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US12033861B2 (en)2017-10-052024-07-09Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US11094546B2 (en)2017-10-052021-08-17Asm Ip Holding B.V.Method for selectively depositing a metallic film on a substrate
US10734223B2 (en)2017-10-102020-08-04Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10319588B2 (en)2017-10-102019-06-11Asm Ip Holding B.V.Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US10923344B2 (en)2017-10-302021-02-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US12040184B2 (en)2017-10-302024-07-16Asm Ip Holding B.V.Methods for forming a semiconductor structure and related semiconductor structures
US10734244B2 (en)2017-11-162020-08-04Asm Ip Holding B.V.Method of processing a substrate and a device manufactured by the same
US10910262B2 (en)2017-11-162021-02-02Asm Ip Holding B.V.Method of selectively depositing a capping layer structure on a semiconductor device structure
US11022879B2 (en)2017-11-242021-06-01Asm Ip Holding B.V.Method of forming an enhanced unexposed photoresist layer
US11639811B2 (en)2017-11-272023-05-02Asm Ip Holding B.V.Apparatus including a clean mini environment
US11127617B2 (en)2017-11-272021-09-21Asm Ip Holding B.V.Storage device for storing wafer cassettes for use with a batch furnace
US11682572B2 (en)2017-11-272023-06-20Asm Ip Holdings B.V.Storage device for storing wafer cassettes for use with a batch furnace
US10290508B1 (en)2017-12-052019-05-14Asm Ip Holding B.V.Method for forming vertical spacers for spacer-defined patterning
US11501973B2 (en)2018-01-162022-11-15Asm Ip Holding B.V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US10872771B2 (en)2018-01-162020-12-22Asm Ip Holding B. V.Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures
US11393690B2 (en)2018-01-192022-07-19Asm Ip Holding B.V.Deposition method
US11972944B2 (en)2018-01-192024-04-30Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
US12119228B2 (en)2018-01-192024-10-15Asm Ip Holding B.V.Deposition method
US11482412B2 (en)2018-01-192022-10-25Asm Ip Holding B.V.Method for depositing a gap-fill layer by plasma-assisted deposition
USD903477S1 (en)2018-01-242020-12-01Asm Ip Holdings B.V.Metal clamp
US11018047B2 (en)2018-01-252021-05-25Asm Ip Holding B.V.Hybrid lift pin
US10535516B2 (en)2018-02-012020-01-14Asm Ip Holdings B.V.Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
USD880437S1 (en)2018-02-012020-04-07Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
USD913980S1 (en)2018-02-012021-03-23Asm Ip Holding B.V.Gas supply plate for semiconductor manufacturing apparatus
US11735414B2 (en)2018-02-062023-08-22Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US11081345B2 (en)2018-02-062021-08-03Asm Ip Holding B.V.Method of post-deposition treatment for silicon oxide film
US10896820B2 (en)2018-02-142021-01-19Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11685991B2 (en)2018-02-142023-06-27Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US11387106B2 (en)2018-02-142022-07-12Asm Ip Holding B.V.Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process
US10731249B2 (en)2018-02-152020-08-04Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US12173402B2 (en)2018-02-152024-12-24Asm Ip Holding B.V.Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
US10658181B2 (en)2018-02-202020-05-19Asm Ip Holding B.V.Method of spacer-defined direct patterning in semiconductor fabrication
US11482418B2 (en)2018-02-202022-10-25Asm Ip Holding B.V.Substrate processing method and apparatus
US11939673B2 (en)2018-02-232024-03-26Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US10975470B2 (en)2018-02-232021-04-13Asm Ip Holding B.V.Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
US11473195B2 (en)2018-03-012022-10-18Asm Ip Holding B.V.Semiconductor processing apparatus and a method for processing a substrate
US11629406B2 (en)2018-03-092023-04-18Asm Ip Holding B.V.Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate
US11114283B2 (en)2018-03-162021-09-07Asm Ip Holding B.V.Reactor, system including the reactor, and methods of manufacturing and using same
US11398382B2 (en)2018-03-272022-07-26Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US12020938B2 (en)2018-03-272024-06-25Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10847371B2 (en)2018-03-272020-11-24Asm Ip Holding B.V.Method of forming an electrode on a substrate and a semiconductor device structure including an electrode
US10510536B2 (en)2018-03-292019-12-17Asm Ip Holding B.V.Method of depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber
US11230766B2 (en)2018-03-292022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11088002B2 (en)2018-03-292021-08-10Asm Ip Holding B.V.Substrate rack and a substrate processing system and method
US10867786B2 (en)2018-03-302020-12-15Asm Ip Holding B.V.Substrate processing method
US12230531B2 (en)2018-04-092025-02-18Asm Ip Holding B.V.Substrate supporting apparatus, substrate processing apparatus including the same, and substrate processing method
US12025484B2 (en)2018-05-082024-07-02Asm Ip Holding B.V.Thin film forming method
US11469098B2 (en)2018-05-082022-10-11Asm Ip Holding B.V.Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures
US12272527B2 (en)2018-05-092025-04-08Asm Ip Holding B.V.Apparatus for use with hydrogen radicals and method of using same
US11056567B2 (en)2018-05-112021-07-06Asm Ip Holding B.V.Method of forming a doped metal carbide film on a substrate and related semiconductor device structures
US11908733B2 (en)2018-05-282024-02-20Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11361990B2 (en)2018-05-282022-06-14Asm Ip Holding B.V.Substrate processing method and device manufactured by using the same
US11837483B2 (en)2018-06-042023-12-05Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11718913B2 (en)2018-06-042023-08-08Asm Ip Holding B.V.Gas distribution system and reactor system including same
US11270899B2 (en)2018-06-042022-03-08Asm Ip Holding B.V.Wafer handling chamber with moisture reduction
US11286562B2 (en)2018-06-082022-03-29Asm Ip Holding B.V.Gas-phase chemical reactor and method of using same
US11530483B2 (en)2018-06-212022-12-20Asm Ip Holding B.V.Substrate processing system
US10797133B2 (en)2018-06-212020-10-06Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11296189B2 (en)2018-06-212022-04-05Asm Ip Holding B.V.Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures
US11499222B2 (en)2018-06-272022-11-15Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11814715B2 (en)2018-06-272023-11-14Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11952658B2 (en)2018-06-272024-04-09Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US11492703B2 (en)2018-06-272022-11-08Asm Ip Holding B.V.Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material
US10612136B2 (en)2018-06-292020-04-07ASM IP Holding, B.V.Temperature-controlled flange and reactor system including same
US11168395B2 (en)2018-06-292021-11-09Asm Ip Holding B.V.Temperature-controlled flange and reactor system including same
US10914004B2 (en)2018-06-292021-02-09Asm Ip Holding B.V.Thin-film deposition method and manufacturing method of semiconductor device
US10388513B1 (en)2018-07-032019-08-20Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755922B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11923190B2 (en)2018-07-032024-03-05Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11646197B2 (en)2018-07-032023-05-09Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10755923B2 (en)2018-07-032020-08-25Asm Ip Holding B.V.Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US10767789B2 (en)2018-07-162020-09-08Asm Ip Holding B.V.Diaphragm valves, valve components, and methods for forming valve components
US10483099B1 (en)2018-07-262019-11-19Asm Ip Holding B.V.Method for forming thermally stable organosilicon polymer film
US11053591B2 (en)2018-08-062021-07-06Asm Ip Holding B.V.Multi-port gas injection system and reactor system including same
US10883175B2 (en)2018-08-092021-01-05Asm Ip Holding B.V.Vertical furnace for processing substrates and a liner for use therein
US10829852B2 (en)2018-08-162020-11-10Asm Ip Holding B.V.Gas distribution device for a wafer processing apparatus
US11430674B2 (en)2018-08-222022-08-30Asm Ip Holding B.V.Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods
US11274369B2 (en)2018-09-112022-03-15Asm Ip Holding B.V.Thin film deposition method
US11804388B2 (en)2018-09-112023-10-31Asm Ip Holding B.V.Substrate processing apparatus and method
US11024523B2 (en)2018-09-112021-06-01Asm Ip Holding B.V.Substrate processing apparatus and method
US11049751B2 (en)2018-09-142021-06-29Asm Ip Holding B.V.Cassette supply system to store and handle cassettes and processing apparatus equipped therewith
US11885023B2 (en)2018-10-012024-01-30Asm Ip Holding B.V.Substrate retaining apparatus, system including the apparatus, and method of using same
US11232963B2 (en)2018-10-032022-01-25Asm Ip Holding B.V.Substrate processing apparatus and method
US11414760B2 (en)2018-10-082022-08-16Asm Ip Holding B.V.Substrate support unit, thin film deposition apparatus including the same, and substrate processing apparatus including the same
US10847365B2 (en)2018-10-112020-11-24Asm Ip Holding B.V.Method of forming conformal silicon carbide film by cyclic CVD
US10811256B2 (en)2018-10-162020-10-20Asm Ip Holding B.V.Method for etching a carbon-containing feature
US11664199B2 (en)2018-10-192023-05-30Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
US11251068B2 (en)2018-10-192022-02-15Asm Ip Holding B.V.Substrate processing apparatus and substrate processing method
USD948463S1 (en)2018-10-242022-04-12Asm Ip Holding B.V.Susceptor for semiconductor substrate supporting apparatus
US10381219B1 (en)2018-10-252019-08-13Asm Ip Holding B.V.Methods for forming a silicon nitride film
US12378665B2 (en)2018-10-262025-08-05Asm Ip Holding B.V.High temperature coatings for a preclean and etch apparatus and related methods
US11087997B2 (en)2018-10-312021-08-10Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11735445B2 (en)2018-10-312023-08-22Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11866823B2 (en)2018-11-022024-01-09Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11499226B2 (en)2018-11-022022-11-15Asm Ip Holding B.V.Substrate supporting unit and a substrate processing device including the same
US11572620B2 (en)2018-11-062023-02-07Asm Ip Holding B.V.Methods for selectively depositing an amorphous silicon film on a substrate
US11031242B2 (en)2018-11-072021-06-08Asm Ip Holding B.V.Methods for depositing a boron doped silicon germanium film
US11244825B2 (en)2018-11-162022-02-08Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US11798999B2 (en)2018-11-162023-10-24Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US11411088B2 (en)2018-11-162022-08-09Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10847366B2 (en)2018-11-162020-11-24Asm Ip Holding B.V.Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process
US10818758B2 (en)2018-11-162020-10-27Asm Ip Holding B.V.Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures
US10559458B1 (en)2018-11-262020-02-11Asm Ip Holding B.V.Method of forming oxynitride film
US12040199B2 (en)2018-11-282024-07-16Asm Ip Holding B.V.Substrate processing apparatus for processing substrates
US11217444B2 (en)2018-11-302022-01-04Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film
US11488819B2 (en)2018-12-042022-11-01Asm Ip Holding B.V.Method of cleaning substrate processing apparatus
US11158513B2 (en)2018-12-132021-10-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11769670B2 (en)2018-12-132023-09-26Asm Ip Holding B.V.Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures
US11658029B2 (en)2018-12-142023-05-23Asm Ip Holding B.V.Method of forming a device structure using selective deposition of gallium nitride and system for same
US11959171B2 (en)2019-01-172024-04-16Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11390946B2 (en)2019-01-172022-07-19Asm Ip Holding B.V.Methods of forming a transition metal containing film on a substrate by a cyclical deposition process
US11171025B2 (en)2019-01-222021-11-09Asm Ip Holding B.V.Substrate processing device
US11127589B2 (en)2019-02-012021-09-21Asm Ip Holding B.V.Method of topology-selective film formation of silicon oxide
US11615980B2 (en)2019-02-202023-03-28Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US12176243B2 (en)2019-02-202024-12-24Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11798834B2 (en)2019-02-202023-10-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11227789B2 (en)2019-02-202022-01-18Asm Ip Holding B.V.Method and apparatus for filling a recess formed within a substrate surface
US11251040B2 (en)2019-02-202022-02-15Asm Ip Holding B.V.Cyclical deposition method including treatment step and apparatus for same
US11482533B2 (en)2019-02-202022-10-25Asm Ip Holding B.V.Apparatus and methods for plug fill deposition in 3-D NAND applications
US11342216B2 (en)2019-02-202022-05-24Asm Ip Holding B.V.Cyclical deposition method and apparatus for filling a recess formed within a substrate surface
US11629407B2 (en)2019-02-222023-04-18Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US12410522B2 (en)2019-02-222025-09-09Asm Ip Holding B.V.Substrate processing apparatus and method for processing substrates
US11742198B2 (en)2019-03-082023-08-29Asm Ip Holding B.V.Structure including SiOCN layer and method of forming same
US11114294B2 (en)2019-03-082021-09-07Asm Ip Holding B.V.Structure including SiOC layer and method of forming same
US11424119B2 (en)2019-03-082022-08-23Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11901175B2 (en)2019-03-082024-02-13Asm Ip Holding B.V.Method for selective deposition of silicon nitride layer and structure including selectively-deposited silicon nitride layer
US11378337B2 (en)2019-03-282022-07-05Asm Ip Holding B.V.Door opener and substrate processing apparatus provided therewith
US11551925B2 (en)2019-04-012023-01-10Asm Ip Holding B.V.Method for manufacturing a semiconductor device
US11447864B2 (en)2019-04-192022-09-20Asm Ip Holding B.V.Layer forming method and apparatus
US11814747B2 (en)2019-04-242023-11-14Asm Ip Holding B.V.Gas-phase reactor system-with a reaction chamber, a solid precursor source vessel, a gas distribution system, and a flange assembly
US11289326B2 (en)2019-05-072022-03-29Asm Ip Holding B.V.Method for reforming amorphous carbon polymer film
US11781221B2 (en)2019-05-072023-10-10Asm Ip Holding B.V.Chemical source vessel with dip tube
US11355338B2 (en)2019-05-102022-06-07Asm Ip Holding B.V.Method of depositing material onto a surface and structure formed according to the method
US11515188B2 (en)2019-05-162022-11-29Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
US11996309B2 (en)2019-05-162024-05-28Asm Ip Holding B.V.Wafer boat handling device, vertical batch furnace and method
USD947913S1 (en)2019-05-172022-04-05Asm Ip Holding B.V.Susceptor shaft
USD975665S1 (en)2019-05-172023-01-17Asm Ip Holding B.V.Susceptor shaft
USD935572S1 (en)2019-05-242021-11-09Asm Ip Holding B.V.Gas channel plate
USD922229S1 (en)2019-06-052021-06-15Asm Ip Holding B.V.Device for controlling a temperature of a gas supply unit
US11345999B2 (en)2019-06-062022-05-31Asm Ip Holding B.V.Method of using a gas-phase reactor system including analyzing exhausted gas
US12195855B2 (en)2019-06-062025-01-14Asm Ip Holding B.V.Gas-phase reactor system including a gas detector
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US12406846B2 (en)2020-05-262025-09-02Asm Ip Holding B.V.Method for depositing boron and gallium containing silicon germanium layers
US11767589B2 (en)2020-05-292023-09-26Asm Ip Holding B.V.Substrate processing device
US12106944B2 (en)2020-06-022024-10-01Asm Ip Holding B.V.Rotating substrate support
US12266524B2 (en)2020-06-162025-04-01Asm Ip Holding B.V.Method for depositing boron containing silicon germanium layers
US11646204B2 (en)2020-06-242023-05-09Asm Ip Holding B.V.Method for forming a layer provided with silicon
US11658035B2 (en)2020-06-302023-05-23Asm Ip Holding B.V.Substrate processing method
US12431354B2 (en)2020-07-012025-09-30Asm Ip Holding B.V.Silicon nitride and silicon oxide deposition methods using fluorine inhibitor
US12020934B2 (en)2020-07-082024-06-25Asm Ip Holding B.V.Substrate processing method
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US12055863B2 (en)2020-07-172024-08-06Asm Ip Holding B.V.Structures and methods for use in photolithography
US11674220B2 (en)2020-07-202023-06-13Asm Ip Holding B.V.Method for depositing molybdenum layers using an underlayer
US12241158B2 (en)2020-07-202025-03-04Asm Ip Holding B.V.Method for forming structures including transition metal layers
US12322591B2 (en)2020-07-272025-06-03Asm Ip Holding B.V.Thin film deposition process
US12154824B2 (en)2020-08-142024-11-26Asm Ip Holding B.V.Substrate processing method
US12040177B2 (en)2020-08-182024-07-16Asm Ip Holding B.V.Methods for forming a laminate film by cyclical plasma-enhanced deposition processes
US12217954B2 (en)2020-08-252025-02-04Asm Ip Holding B.V.Method of cleaning a surface
US11725280B2 (en)2020-08-262023-08-15Asm Ip Holding B.V.Method for forming metal silicon oxide and metal silicon oxynitride layers
US12074022B2 (en)2020-08-272024-08-27Asm Ip Holding B.V.Method and system for forming patterned structures using multiple patterning process
US12211742B2 (en)2020-09-102025-01-28Asm Ip Holding B.V.Methods for depositing gap filling fluid
USD990534S1 (en)2020-09-112023-06-27Asm Ip Holding B.V.Weighted lift pin
US12148609B2 (en)2020-09-162024-11-19Asm Ip Holding B.V.Silicon oxide deposition method
USD1012873S1 (en)2020-09-242024-01-30Asm Ip Holding B.V.Electrode for semiconductor processing apparatus
US12218000B2 (en)2020-09-252025-02-04Asm Ip Holding B.V.Semiconductor processing method
US12009224B2 (en)2020-09-292024-06-11Asm Ip Holding B.V.Apparatus and method for etching metal nitrides
US12107005B2 (en)2020-10-062024-10-01Asm Ip Holding B.V.Deposition method and an apparatus for depositing a silicon-containing material
US12051567B2 (en)2020-10-072024-07-30Asm Ip Holding B.V.Gas supply unit and substrate processing apparatus including gas supply unit
US11827981B2 (en)2020-10-142023-11-28Asm Ip Holding B.V.Method of depositing material on stepped structure
US12217946B2 (en)2020-10-152025-02-04Asm Ip Holding B.V.Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-CAT
US11873557B2 (en)2020-10-222024-01-16Asm Ip Holding B.V.Method of depositing vanadium metal
US11901179B2 (en)2020-10-282024-02-13Asm Ip Holding B.V.Method and device for depositing silicon onto substrates
US12209308B2 (en)2020-11-122025-01-28Asm Ip Holding B.V.Reactor and related methods
US12195852B2 (en)2020-11-232025-01-14Asm Ip Holding B.V.Substrate processing apparatus with an injector
US12027365B2 (en)2020-11-242024-07-02Asm Ip Holding B.V.Methods for filling a gap and related systems and devices
US11891696B2 (en)2020-11-302024-02-06Asm Ip Holding B.V.Injector configured for arrangement within a reaction chamber of a substrate processing apparatus
US12255053B2 (en)2020-12-102025-03-18Asm Ip Holding B.V.Methods and systems for depositing a layer
US12159788B2 (en)2020-12-142024-12-03Asm Ip Holding B.V.Method of forming structures for threshold voltage control
US11946137B2 (en)2020-12-162024-04-02Asm Ip Holding B.V.Runout and wobble measurement fixtures
US12288710B2 (en)2020-12-182025-04-29Asm Ip Holding B.V.Wafer processing apparatus with a rotatable table
US11885020B2 (en)2020-12-222024-01-30Asm Ip Holding B.V.Transition metal deposition method
US12129545B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Precursor capsule, a vessel and a method
US12131885B2 (en)2020-12-222024-10-29Asm Ip Holding B.V.Plasma treatment device having matching box
US12442082B2 (en)2021-05-042025-10-14Asm Ip Holding B.V.Reactor system comprising a tuning circuit
USD980813S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas flow control plate for substrate processing apparatus
USD980814S1 (en)2021-05-112023-03-14Asm Ip Holding B.V.Gas distributor for substrate processing apparatus
USD981973S1 (en)2021-05-112023-03-28Asm Ip Holding B.V.Reactor wall for substrate processing apparatus
USD990441S1 (en)2021-09-072023-06-27Asm Ip Holding B.V.Gas flow control plate
USD1060598S1 (en)2021-12-032025-02-04Asm Ip Holding B.V.Split showerhead cover
US12444599B2 (en)2021-12-082025-10-14Asm Ip Holding B.V.Method for forming an ultraviolet radiation responsive metal oxide-containing film

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