【０００１】[0001]
【産業上の利用分野】本発明は、表面実装用のチップ部
品型ＬＥＤ及びその製造方法に関し、各種表示パネル、
液晶表示装置のバックライト、照光スイッチ等の光源と
して利用される。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount chip part type LED and its manufacturing method, and various display panels,
It is used as a light source for backlights and illumination switches of liquid crystal display devices.
【０００２】[0002]
【従来の技術】各種表示パネル、液晶表示装置のバック
ライト、照光スイッチ等の光源として、従来よりチップ
部品型ＬＥＤが利用されている。2. Description of the Related Art Chip component type LEDs have been conventionally used as light sources for various display panels, backlights of liquid crystal display devices, illumination switches and the like.
【０００３】このような従来のチップ部品型ＬＥＤの構
造の一例を、図１４乃至図１６に示す。14 to 16 show an example of the structure of such a conventional chip component type LED.
【０００４】図１４に示すチップ部品型ＬＥＤは、カソ
ード側である一方のリードフレーム端子６０に、Ａｇペ
ーストでＬＥＤチップ６１を実装し、このＬＥＤチップ
６１とアノード側である他方のリードフレーム端子６２
とを金属細線（Ａｕ線等）６３で接続し、さらに全体を
透明樹脂６４で封止した構造となっている。In the chip part type LED shown in FIG. 14, an LED chip 61 is mounted on one lead frame terminal 60 on the cathode side with Ag paste, and the LED chip 61 and the other lead frame terminal 62 on the anode side are mounted.
Is connected with a thin metal wire (Au wire or the like) 63, and the whole is sealed with a transparent resin 64.
【０００５】また、図１５に示すチップ部品型ＬＥＤ
は、絶縁基板７０の表面に形成された一方の配線パター
ン７４上にＬＥＤチップ７１を接着し、対になっている
他方の配線パターン７５とこのＬＥＤチップ７１とを金
属細線（Ａｕ線等）７２で接続し、さらにＬＥＤチップ
７１と金属細線７２とを含む絶縁基板７０の表面を透明
樹脂７３で封止した構造となっている。Further, a chip part type LED shown in FIG.
The LED chip 71 is adhered onto one wiring pattern 74 formed on the surface of the insulating substrate 70, and the other wiring pattern 75 paired with this LED chip 71 is connected to a thin metal wire (Au wire or the like) 72. And the surface of the insulating substrate 70 including the LED chip 71 and the thin metal wire 72 is sealed with a transparent resin 73.
【０００６】また、図１６に示すチップ部品型ＬＥＤ
は、絶縁基板８１，８２を２層構造としたもので、上部
の絶縁基板８２に貫通穴８３を形成し、この貫通穴８３
内の底部（すなわち、絶縁基板８１の上面）まで延設し
て一方の配線パターン８４を形成し、貫通穴８３内の前
記配線パターン８４上にＬＥＤチップ８５を実装し、こ
のＬＥＤチップ８５と、他方の配線パターン８６とを金
属細線（Ａｕ線等）８７で接続し、さらにＬＥＤチップ
８５と金属細線８７とを含む絶縁基板８２の表面を透明
樹脂８８で封止した構造となっている。Further, a chip part type LED shown in FIG.
Is a two-layer structure of the insulating substrates 81 and 82. A through hole 83 is formed in the upper insulating substrate 82.
One wiring pattern 84 is formed by extending to the bottom portion (that is, the upper surface of the insulating substrate 81) inside, and the LED chip 85 is mounted on the wiring pattern 84 in the through hole 83. The other wiring pattern 86 is connected with a metal thin wire (Au wire or the like) 87, and the surface of the insulating substrate 82 including the LED chip 85 and the metal thin wire 87 is sealed with a transparent resin 88.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、図１４
に示すチップ部品型ＬＥＤは、リードフレーム端子６０
にＬＥＤチップ６１を固定する構造であるため、十分な
強度を得るためには、少なくともリードフレーム端子６
０を厚くする必要があるとともに、各リードフレーム６
０，６２の先端部を含めてＬＥＤチップ６１の全体を樹
脂封止する必要があるため、全体的に厚くなる。また、
ＬＥＤチップ６１の点灯時に側面や裏面への光が漏れて
しまうため、上方への反射効率が低いといった問題があ
った。However, as shown in FIG.
The chip part type LED shown in FIG.
Since the structure is such that the LED chip 61 is fixed on the lead frame terminal 6, in order to obtain sufficient strength, at least the lead frame terminal 6
0 needs to be thicker and each lead frame 6
Since it is necessary to seal the entire LED chip 61 including the tip portions of 0 and 62 with resin, the LED chip 61 becomes thick as a whole. Also,
There is a problem that the efficiency of upward reflection is low because light leaks to the side surface and the back surface when the LED chip 61 is turned on.
【０００８】また、図１５に示すチップ部品型ＬＥＤ
は、絶縁基板７０上にＬＥＤチップ７１が設けられた構
造であるため、ＬＥＤチップ７１の点灯時に側面へ光が
漏れてしまうため、その分上方への反射効率が低いとい
った問題があった。Further, a chip part type LED shown in FIG.
Has a structure in which the LED chip 71 is provided on the insulating substrate 70, so that light leaks to the side surface when the LED chip 71 is turned on, and thus there is a problem that the reflection efficiency upward is low.
【０００９】また、図１６に示すチップ部品型ＬＥＤ
は、貫通穴８３内にＬＥＤチップ８５を実装することで
薄型化が達成されているものの、貫通穴８３の内周面が
底面に対して垂直に形成されていることから、ＬＥＤチ
ップ８５の点灯時の上方への光の反射効率が低いといっ
た問題があった。また、２枚の絶縁基板８１，８２を必
要とすることから、薄型化が困難であるとともに、コス
ト的にも高くなるといった問題があった。Also, a chip component type LED shown in FIG.
Although the thinning has been achieved by mounting the LED chip 85 in the through hole 83, since the inner peripheral surface of the through hole 83 is formed perpendicular to the bottom surface, the LED chip 85 is turned on. There was a problem that the efficiency of reflection of light upward in time was low. Further, since the two insulating substrates 81 and 82 are required, it is difficult to reduce the thickness and the cost is increased.
【００１０】さらに、図１５及び図１６に示すチップ部
品型ＬＥＤは、共にＬＥＤチップ７１，８５を絶縁基板
７０，８２上に実装することから、絶縁基板７０，８２
は実装可能な最低限度の厚みが必要となる。Further, in the chip component type LED shown in FIGS. 15 and 16, since the LED chips 71 and 85 are mounted on the insulating substrates 70 and 82, respectively, the insulating substrates 70 and 82 are formed.
Requires a minimum thickness that can be mounted.
【００１１】本発明はこのような問題点を解決すべく創
案されたもので、その目的は、ＬＥＤチップを実装する
ための基板厚みを無くして薄型化を達成するとともに、
点灯時の光の反射効率の向上を図ったチップ部品型ＬＥ
Ｄ及びその製造方法を提供することにある。The present invention was devised to solve such a problem, and an object thereof is to eliminate the thickness of a substrate for mounting an LED chip and achieve a thin structure.
Chip component type LE that improves the light reflection efficiency during lighting
D and a manufacturing method thereof.
【００１２】[0012]
【課題を解決するための手段】上記課題を解決するた
め、請求項１に記載された本発明のチップ部品型ＬＥＤ
は、貫通穴が形成された絶縁基板の裏面に、一方の配線
パターンを形成する金属薄板が添設され、前記貫通穴内
の前記金属薄板上にＬＥＤチップが実装され、このＬＥ
Ｄチップと前記絶縁基板の表面に形成された他方の配線
パターンとが電気的に接続されて透明樹脂により封止さ
れた構造とする。In order to solve the above-mentioned problems, the chip part type LED of the present invention described in claim 1.
Is a thin metal plate forming one wiring pattern is additionally provided on the back surface of an insulating substrate having a through hole, and an LED chip is mounted on the thin metal plate in the through hole.
The D chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with a transparent resin.
【００１３】また、請求項２に記載された本発明のチッ
プ部品型ＬＥＤは、貫通穴が形成された絶縁基板の裏面
に、一方の配線パターンを形成する金属薄板が添設さ
れ、前記貫通穴内の前記金属薄板上にＬＥＤチップが実
装され、このＬＥＤチップと前記絶縁基板の表面に形成
された他方の配線パターンとが電気的に接続されて透明
樹脂により封止されたもので、前記貫通穴の内周面が、
絶縁基板の裏面側から表面側に向かって漸次拡開する傾
斜面に形成されたものである。Further, in the chip component type LED of the present invention as defined in claim 2, a thin metal plate for forming one wiring pattern is attached to the back surface of the insulating substrate having the through hole, and the inside of the through hole is formed. The LED chip is mounted on the metal thin plate, and the LED chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with a transparent resin. The inner surface of
It is formed on an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate.
【００１４】また、請求項３に記載された本発明に係わ
るチップ部品型ＬＥＤの製造方法は、絶縁基板に貫通穴
を開設した後、裏面に金属層を形成する第１の工程と、
無電解及び電解メッキ法を用いて前記絶縁基板の表面、
裏面及び側面と前記貫通穴の内周面とにメッキ層を形成
する第２の工程と、絶縁基板の裏面に形成した前記金属
層及び絶縁基板の表面、裏面及び側面に形成した前記メ
ッキ層を分離して１対の電極層を形成する第３の工程
と、前記貫通穴内の底面である前記金属層に導電材料を
用いてＬＥＤチップを実装し、このＬＥＤチップと前記
絶縁基板の表面に形成された他方の電極層とを導電材料
で接続する第４の工程と、前記ＬＥＤチップと前記導電
材料とを透光性の樹脂にて封止する第５の工程とを具備
するものである。In the method of manufacturing a chip part type LED according to the present invention as defined in claim 3, a first step of forming a metal layer on the back surface after forming a through hole in the insulating substrate,
The surface of the insulating substrate using electroless and electrolytic plating methods,
The second step of forming a plating layer on the back surface and side surface and the inner peripheral surface of the through hole, and the metal layer formed on the back surface of the insulating substrate and the plating layer formed on the front surface, back surface and side surface of the insulating substrate. A third step of separating and forming a pair of electrode layers, an LED chip is mounted on the metal layer which is the bottom surface in the through hole using a conductive material, and the LED chip and the insulating substrate are formed on the surface. It comprises a fourth step of connecting the other electrode layer thus formed with a conductive material, and a fifth step of sealing the LED chip and the conductive material with a transparent resin.
【００１５】また、請求項４に記載された本発明に係わ
るチップ部品型ＬＥＤの製造方法は、表面のＬＥＤチッ
プを実装する部分を除いて、絶縁基板の表面、裏面及び
側面に金属層を形成する第１の工程と、レーザ光を前記
絶縁基板のＬＥＤチップ実装部分に照射して、裏面の金
属層まで達する貫通穴を形成する第２の工程と、前記貫
通穴の内周面に金属層を形成する第３の工程と、絶縁基
板の表面、裏面及び側面に形成した前記金属層を分離し
て１対の電極層を形成する第４の工程と、前記貫通穴内
の底面である前記金属層に導電材料を用いてＬＥＤチッ
プを実装し、このＬＥＤチップと前記絶縁基板の表面に
形成された他方の電極層とを導電材料で接続する第５の
工程と、前記ＬＥＤチップと前記導電材料とを透光性の
樹脂にて封止する第６の工程とを具備するものである。In the method of manufacturing a chip part type LED according to the present invention as defined in claim 4, metal layers are formed on the front surface, the back surface and the side surface of the insulating substrate except for the portion where the LED chips are mounted on the front surface. A second step of irradiating the LED chip mounting portion of the insulating substrate with a laser beam to form a through hole reaching the metal layer on the back surface; and a metal layer on the inner peripheral surface of the through hole. Forming a pair of electrode layers by separating the metal layers formed on the front surface, the back surface and the side surfaces of the insulating substrate, and the metal forming the bottom surface in the through hole. A fifth step of mounting an LED chip by using a conductive material for the layer and connecting the LED chip and the other electrode layer formed on the surface of the insulating substrate with a conductive material; the LED chip and the conductive material. And are sealed with translucent resin It is intended to and a sixth step.
【００１６】[0016]
【作用】請求項１に記載された発明の作用について説明
する。The operation of the invention described in claim 1 will be described.
【００１７】貫通穴が形成された絶縁基板の裏面に、一
方の配線パターンを形成する金属薄板を添設し、貫通穴
内の金属薄板上にＬＥＤチップを実装し、このＬＥＤチ
ップと絶縁基板の表面に形成された他方の配線パターン
とを電気的に接続して、透明樹脂により封止した構造と
する。すなわち、絶縁基板の裏面に金属薄板を添設する
ことにより、金属薄板は絶縁基板によってその形状が保
持される。そのため、この金属薄板に容易にＬＥＤチッ
プを実装することができ、さらに金属細線で接続した場
合にも、変形することがない。つまり、絶縁基板が金属
薄板を保持することで、ＬＥＤチップの金属薄板上への
実装、金属細線の接続、透光性樹脂での封止といった作
業が容易に行えるものである。A metal thin plate for forming one wiring pattern is additionally provided on the back surface of the insulating substrate having the through holes, LED chips are mounted on the metal thin plate in the through holes, and the LED chip and the surface of the insulating substrate are mounted. The other wiring pattern formed in the above is electrically connected and is sealed with a transparent resin. That is, by attaching a thin metal plate to the back surface of the insulating substrate, the shape of the thin metal plate is retained by the insulating substrate. Therefore, the LED chip can be easily mounted on the metal thin plate, and is not deformed even when the metal thin wires are connected. That is, since the insulating substrate holds the thin metal plate, operations such as mounting the LED chip on the thin metal plate, connecting thin metal wires, and sealing with a light-transmissive resin can be easily performed.
【００１８】また、貫通穴の底部の金属薄板にＬＥＤチ
ップを実装する構造であるため、従来は必要であったＬ
ＥＤチップを実装するための基板（主に図１３及び図１
４に示す構造のもの）が不要となり、極薄型が達成でき
る。すなわち、従来のチップ部品型ＬＥＤの厚みは、図
１４に示すものでは１．１mm程度、図１５及び図１６に
示すものでは０．８mm程度であったが、本願のものでは
０．６mm以内に厚みを抑えることが可能となる。Moreover, since the LED chip is mounted on the thin metal plate at the bottom of the through hole, L which has been conventionally required.
A board for mounting the ED chip (mainly in FIGS. 13 and 1).
The structure shown in FIG. 4) is unnecessary, and an extremely thin structure can be achieved. That is, the thickness of the conventional chip component type LED is about 1.1 mm in the case shown in FIG. 14 and about 0.8 mm in the cases shown in FIGS. 15 and 16, but within 0.6 mm in the present application. It is possible to reduce the thickness.
【００１９】請求項２に記載された発明の作用について
説明する。The operation of the invention described in claim 2 will be described.
【００２０】貫通穴が形成された絶縁基板の裏面に、一
方の配線パターンを形成する金属薄板を添設し、貫通穴
内の金属薄板上にＬＥＤチップを実装し、このＬＥＤチ
ップと絶縁基板の表面に形成された他方の配線パターン
とを電気的に接続して、透明樹脂により封止する。この
とき、貫通穴の内周面を、絶縁基板の裏面側から表面側
に向かって漸次拡開する傾斜面に形成する。これによ
り、ＬＥＤチップの点灯時、側面に向かう光は傾斜面で
反射されて上方に向かうことから、上方への反射効率が
向上することになる。因みに、貫通穴の内周面を傾斜面
としたことによるＬＥＤチップ点灯時の反射効率は、平
板基板上にＬＥＤチップを実装した場合（図１４乃至図
１６に示す場合）と比較して、３０パーセント以上増大
させることができる。A metal thin plate for forming one wiring pattern is additionally provided on the back surface of the insulating substrate in which the through hole is formed, an LED chip is mounted on the metal thin plate in the through hole, and the LED chip and the front surface of the insulating substrate. It is electrically connected to the other wiring pattern formed in, and is sealed with a transparent resin. At this time, the inner peripheral surface of the through hole is formed into an inclined surface that gradually expands from the back surface side to the front surface side of the insulating substrate. As a result, when the LED chip is turned on, the light traveling toward the side surface is reflected by the inclined surface and travels upward, so that the efficiency of upward reflection is improved. By the way, the reflection efficiency at the time of lighting the LED chip by setting the inner peripheral surface of the through hole to the inclined surface is 30 as compared with the case where the LED chip is mounted on the flat substrate (the case shown in FIGS. 14 to 16). It can be increased by more than a percentage.
【００２１】請求項３に記載された発明の作用について
説明する。The operation of the invention described in claim 3 will be described.
【００２２】第１の工程では、絶縁基板に貫通穴を開設
した後、裏面に金属層を形成する。このように、まず絶
縁基板に貫通穴を開けることから、貫通穴は機械的なド
リル等によっても開けることができる。このことは、絶
縁基板を何枚も重ねて貫通穴を一度に開けることを可能
とするものであり、低コスト化が実現できる。また、絶
縁基板の裏面に金属層を形成する方法としては、金属薄
板を単に接着剤で貼り合わせるといった簡単な方法が可
能である。In the first step, after forming a through hole in the insulating substrate, a metal layer is formed on the back surface. As described above, since the through hole is first formed in the insulating substrate, the through hole can be formed by a mechanical drill or the like. This makes it possible to form a through hole at a time by stacking a number of insulating substrates, which can reduce the cost. As a method of forming the metal layer on the back surface of the insulating substrate, a simple method such as simply sticking a metal thin plate with an adhesive is possible.
【００２３】次に、第２の工程では、無電解及び電解メ
ッキ法を用いて前記絶縁基板の表面、裏面及び側面と前
記貫通穴の内周面とにメッキ層を形成し、第３の工程
で、絶縁基板の裏面に形成した前記金属層及び絶縁基板
の表面、裏面及び側面に形成した前記メッキ層を分離し
て１対の電極層を形成する。そして、第４の工程では、
前記貫通穴内の底面である前記金属層に導電材料を用い
てＬＥＤチップを実装し、このＬＥＤチップと前記絶縁
基板の表面に形成された他方の電極層とを導電材料で接
続し、次の第５の工程で、前記ＬＥＤチップと前記導電
材料とを透光性の樹脂にて封止して、チップ部品型ＬＥ
Ｄの製造を終了する。Next, in the second step, a plating layer is formed on the front, back and side surfaces of the insulating substrate and the inner peripheral surface of the through hole by using electroless and electrolytic plating methods, and the third step Then, the metal layer formed on the back surface of the insulating substrate and the plating layer formed on the front surface, back surface and side surface of the insulating substrate are separated to form a pair of electrode layers. And in the fourth step,
An LED chip is mounted on the metal layer, which is the bottom surface in the through hole, using a conductive material, and the LED chip and the other electrode layer formed on the surface of the insulating substrate are connected by a conductive material. In step 5, the LED chip and the conductive material are sealed with a translucent resin to obtain a chip component type LE.
The production of D is finished.
【００２４】請求項４に記載された本発明の作用につい
て説明する。The operation of the present invention described in claim 4 will be described.
【００２５】第１の工程では、表面のＬＥＤチップを実
装する部分を除いて、絶縁基板の表面、裏面及び側面に
金属層を形成し、次の第２の工程で、レーザ光を前記絶
縁基板のＬＥＤチップ実装部分に照射して、裏面の金属
層まで達する貫通穴を形成する。レーザ光で絶縁基板の
対象エリアを除去すると、レーザ光は中心部から広がる
ように絶縁部を除去していくため、形成された貫通穴の
内周面は自然と傾斜面に形成される。つまり、レーザ光
を絶縁基板の表面側から照射することにより、貫通穴の
内周面は、絶縁基板の裏面側から表面側に向かって漸次
拡開する傾斜面に形成される。In the first step, a metal layer is formed on the front surface, the back surface and the side surfaces of the insulating substrate except the portion where the LED chip is mounted on the front surface. In the next second step, laser light is applied to the insulating substrate. The LED chip mounting portion is irradiated with light to form a through hole reaching the metal layer on the back surface. When the target area of the insulating substrate is removed by the laser light, the insulating portion is removed so that the laser light spreads from the central portion, so that the inner peripheral surface of the formed through hole is naturally formed as an inclined surface. That is, by irradiating the front surface side of the insulating substrate with the laser light, the inner peripheral surface of the through hole is formed into an inclined surface that gradually expands from the rear surface side of the insulating substrate toward the front surface side.
【００２６】次に、第３の工程では、前記貫通穴の内面
（周面及び底面）に金属層を形成し、次の第４の工程
で、絶縁基板の表面、裏面及び側面に形成した前記金属
層を分離して１対の電極層を形成し、次の第５の工程
で、前記貫通穴内の底面である前記金属層に導電材料を
用いてＬＥＤチップを実装し、このＬＥＤチップと前記
絶縁基板の表面に形成された他方の電極層とを導電材料
で接続する。そして、第６の工程で、前記ＬＥＤチップ
と前記導電材料とを透光性の樹脂にて封止して、チップ
部品型ＬＥＤの製造を終了する。Next, in a third step, a metal layer is formed on the inner surface (peripheral surface and bottom surface) of the through hole, and in the next fourth step, the metal layer is formed on the front surface, back surface and side surface of the insulating substrate. The metal layer is separated to form a pair of electrode layers, and in the next fifth step, an LED chip is mounted on the metal layer, which is the bottom surface in the through hole, using a conductive material. The other electrode layer formed on the surface of the insulating substrate is connected with a conductive material. Then, in a sixth step, the LED chip and the conductive material are sealed with a translucent resin, and the manufacturing of the chip component type LED is completed.
【００２７】[0027]
【実施例】以下、本発明の実施例を図面を参照して説明
する。 〔実施例１〕図１及び図２は、本発明のチップ部品型Ｌ
ＥＤの断面図及び平面図を示しており、請求項１及び２
に対応した実施例である。Embodiments of the present invention will be described below with reference to the drawings. [Embodiment 1] FIGS. 1 and 2 show a chip part type L of the present invention.
A cross-sectional view and a plan view of the ED are shown, wherein
It is an embodiment corresponding to.
【００２８】図において、貫通穴１２が形成された絶縁
基板１０の表面１０２に金属層７，８が形成され、裏面
１０１に金属薄板５，６が添設されている。また、貫通
穴１２の内周面は、絶縁基板１０の裏面１０１側から表
面１０２側に向かって漸次拡開する傾斜面１２１に形成
されている。In the figure, metal layers 7 and 8 are formed on the front surface 102 of the insulating substrate 10 in which the through holes 12 are formed, and metal thin plates 5 and 6 are attached to the back surface 101. The inner peripheral surface of the through hole 12 is formed as an inclined surface 121 that gradually expands from the back surface 101 side to the front surface 102 side of the insulating substrate 10.
【００２９】また、表面１０２の金属層７と裏面１０１
の金属薄板５とを接続し、かつ貫通穴１２の傾斜面１２
１及び底面１２２（金属薄板５）まで延設するように一
方の配線パターン９が形成され、表面１０２の金属層８
と裏面１０１の金属薄板６とを接続するように他方の配
線パターン４が形成されている。Further, the metal layer 7 on the front surface 102 and the back surface 101
Of the through-hole 12 and the metal thin plate 5 of
1 and one wiring pattern 9 is formed so as to extend to the bottom surface 122 (metal thin plate 5), and the metal layer 8 on the front surface 102 is formed.
The other wiring pattern 4 is formed so as to connect the metal thin plate 6 on the back surface 101 with the other.
【００３０】そして、このように形成された貫通穴１２
内の底面１２２（金属薄板５）にＬＥＤチップ１が実装
され、このＬＥＤチップ１と絶縁基板１０の表面１０２
に形成された他方の配線パターン４とがＡｕ等の金属細
線２で接続され、これらＬＥＤチップ１と金属細線２と
が透明樹脂（透光性の樹脂）１１により封止された構造
となっている。なお、図中の符号１６は、はんだ付け時
の絶縁性を確保するためのレジスト層、符号１７はＡｇ
ペースト等の導電材料である。The through hole 12 formed in this way
The LED chip 1 is mounted on the bottom surface 122 (metal thin plate 5) inside the LED chip 1 and the surface 102 of the insulating substrate 10.
The other wiring pattern 4 formed in the above is connected by a metal thin wire 2 such as Au, and the LED chip 1 and the metal thin wire 2 are sealed by a transparent resin (translucent resin) 11. There is. In the figure, reference numeral 16 is a resist layer for ensuring insulation during soldering, and reference numeral 17 is Ag.
It is a conductive material such as paste.
【００３１】次に、上記構成のチップ部品型ＬＥＤの製
造方法について、図３を参照して説明する。この製造方
法は、請求項３に対応している。Next, a method of manufacturing the chip component type LED having the above structure will be described with reference to FIG. This manufacturing method corresponds to claim 3.
【００３２】第１の工程では、表面１０２に金属層７，
８を有する絶縁基板１０に、内周壁が傾斜面１２１であ
る貫通穴１２を開設し、裏面１０１に金属層５，６を貼
り合わせる。ただし、このときの金属層５，６は、この
時点では連続した１枚の金属層である〔図３（ａ）参
照〕。In the first step, the metal layer 7,
A through hole 12 whose inner peripheral wall is an inclined surface 121 is formed in an insulating substrate 10 having 8 and metal layers 5 and 6 are attached to a back surface 101. However, the metal layers 5 and 6 at this time are one continuous metal layer at this time [see FIG. 3 (a)].
【００３３】また、貫通穴１２の形成に際しては、裏面
１０１に金属層５，６を貼り合わせる前に行うことか
ら、機械的なドリル等によって開けることができる。そ
のため、絶縁基板１０を何枚も重ねて、各絶縁基板１０
に貫通穴１２を一度に開けることが可能となる。ただ
し、この場合の開通穴１２は円筒形であって、その内周
面は垂直面となる。そのため、傾斜面にするための加工
が必要となるが、低コスト化は実現できる。Since the through holes 12 are formed before the metal layers 5 and 6 are attached to the back surface 101, they can be opened by a mechanical drill or the like. Therefore, a number of insulating substrates 10 are stacked and each insulating substrate 10
It is possible to open the through hole 12 at once. However, the through hole 12 in this case is cylindrical, and its inner peripheral surface is a vertical surface. Therefore, it is necessary to perform processing for forming an inclined surface, but cost reduction can be realized.
【００３４】第２の工程では、無電解及び電解メッキ法
を用いて、上記構成の絶縁基板１０の表面１０２、裏面
１０１及び側面１０３，１０４と、貫通穴１２内の傾斜
面１２１及び底面１２２とにメッキ層１５を形成する。
ここで、絶縁基板１０の表面とは、具体的には表面１０
２に形成された金属層７，８の表面のことであり、絶縁
基板１０の裏面とは、具体的には金属層５，６の表面の
ことである〔図３（ｂ）参照〕。In the second step, the front surface 102, the back surface 101 and the side surfaces 103 and 104 of the insulating substrate 10 having the above structure, the inclined surface 121 and the bottom surface 122 in the through hole 12 are formed by using the electroless and electrolytic plating methods. Then, the plating layer 15 is formed.
Here, the surface of the insulating substrate 10 is specifically the surface 10
2 is the front surface of the metal layers 7 and 8, and the back surface of the insulating substrate 10 is specifically the front surface of the metal layers 5 and 6 (see FIG. 3B).
【００３５】第３の工程では、絶縁基板１０の裏面１０
１側のメッキ層１５を金属層５，６とともに分離処理し
てそれぞれ配線パターン（アノード側及びカソード側と
なる一対の電極）９，４を形成する。同じく、絶縁基板
１０の表面１０２側のメッキ層も金属層７，８に分離す
る。分離処理は、例えばエッチングやレーザ加工等で金
属部分を除去することにより行う。また、必要に応じて
残った金属部分に電解メッキ法にて金属層を積み上げ
る。例えば、銅フィルムと銅メッキで配線パターン９，
４を形成した後、その金属層上にＮｉ，ＡｇあるいはＡ
ｕ，パラジウム等を積層する。これは、金属表面の保護
あるいは金属線との接続性のためである。これにより、
基板の処理を完了する。また、絶縁基板１０の裏面１０
１には、はんだ付け時の絶縁性を確保するためのレジス
ト層１６を形成する〔図３（ｃ）参照〕。In the third step, the back surface 10 of the insulating substrate 10 is
The plating layer 15 on the first side is separated together with the metal layers 5 and 6 to form wiring patterns (a pair of electrodes on the anode side and the cathode side) 9 and 4, respectively. Similarly, the plating layer on the surface 102 side of the insulating substrate 10 is also separated into the metal layers 7 and 8. The separation process is performed by removing the metal portion by etching or laser processing, for example. If necessary, a metal layer is stacked on the remaining metal portion by electrolytic plating. For example, a wiring pattern 9 made of copper film and copper plating,
4 is formed, then Ni, Ag or A is formed on the metal layer.
u, palladium, etc. are laminated. This is because of protection of the metal surface or connectivity with the metal wire. This allows
The processing of the substrate is completed. In addition, the back surface 10 of the insulating substrate 10
1 is formed with a resist layer 16 for ensuring insulation during soldering [see FIG. 3 (c)].
【００３６】第４の工程では、このようにして形成した
絶縁基板１０の貫通穴１２内の底面１２２（具体的に
は、金属薄板５上に形成された配線パターン９上））
に、Ａｇペースト等の導電材料１７を用いてＬＥＤチッ
プ１を実装し、このＬＥＤチップ１と絶縁基板１０の表
面１０２に形成された他方の配線パターン４とを、Ａｕ
等の金属細線２で接続する〔図３（ｄ）参照〕。In the fourth step, the bottom surface 122 in the through hole 12 of the insulating substrate 10 thus formed (specifically, on the wiring pattern 9 formed on the thin metal plate 5))
, The LED chip 1 is mounted using a conductive material 17 such as Ag paste, and the LED chip 1 and the other wiring pattern 4 formed on the surface 102 of the insulating substrate 10 are connected to Au.
They are connected with a thin metal wire 2 such as [see FIG. 3 (d)].
【００３７】第５の工程では、これらＬＥＤチップ１と
金属細線２とを内包するようにして、絶縁基板１０の表
面１０２に透明樹脂（透光性の樹脂）１１を充填し、Ｌ
ＥＤチップ１と金属細線２とを完全に封止する。これに
より、図１に示す構造のチップ部品型ＬＥＤが作製され
る。 〔実施例２〕図４及び図５は、本発明のチップ部品型Ｌ
ＥＤの他の実施例を示す断面図及び平面図であり、請求
項１及び２に対応している。In the fifth step, the surface 102 of the insulating substrate 10 is filled with a transparent resin (translucent resin) 11 so that the LED chip 1 and the thin metal wire 2 are contained therein, and L
The ED chip 1 and the thin metal wire 2 are completely sealed. As a result, a chip component type LED having the structure shown in FIG. 1 is manufactured. [Embodiment 2] FIGS. 4 and 5 show a chip part type L of the present invention.
It is sectional drawing and the top view which show other Examples of ED, and respond | corresponds to Claim 1 and 2.
【００３８】図において、貫通穴３２が形成された絶縁
基板３０に、その表面３０２から、各側面３０３，３０
４を経て裏面３０１に至る金属層２７，２８が形成され
ている。本実施例では、金属層２７がカソード側、金属
層２８がアノード側となる。また、貫通穴３２の内周面
は、絶縁基板３０の裏面３０１側から表面３０２側に向
かって漸次拡開する湾曲面３２１に形成されている。In the figure, an insulating substrate 30 having a through hole 32 is formed on the side surface 303, 30 from the front surface 302.
The metal layers 27 and 28 are formed to reach the back surface 301 through 4. In this embodiment, the metal layer 27 is on the cathode side and the metal layer 28 is on the anode side. The inner peripheral surface of the through hole 32 is formed as a curved surface 321 that gradually expands from the back surface 301 side to the front surface 302 side of the insulating substrate 30.
【００３９】また、カソード側である金属層２７を延設
する形で、貫通穴３２の内周面に金属層２９が形成され
ている。Further, a metal layer 29 is formed on the inner peripheral surface of the through hole 32 so as to extend the metal layer 27 on the cathode side.
【００４０】そして、このように形成された貫通穴３２
内の底面３２２（具体的には、金属層２７上に形成され
た金属層２９））にＬＥＤチップ２１が実装され、この
ＬＥＤチップ２１と絶縁基板３０の表面３０２に形成さ
れたアノード側の金属層２８とがＡｕ等の金属細線２２
で接続され、これらＬＥＤチップ２１と金属細線２２と
が透明樹脂（透光性の樹脂）３１により封止された構造
となっている。なお、図中の符号３６は、はんだ付け時
の絶縁性を確保するためのレジスト層、符号３７はＡｇ
ペースト等の導電材料である。The through hole 32 formed in this way
The LED chip 21 is mounted on the inner bottom surface 322 (specifically, the metal layer 29 formed on the metal layer 27), and the metal on the anode side formed on the LED chip 21 and the surface 302 of the insulating substrate 30. The layer 28 is a thin metal wire 22 such as Au.
The LED chip 21 and the thin metal wire 22 are connected with each other and sealed with a transparent resin (translucent resin) 31. In the figure, reference numeral 36 is a resist layer for ensuring insulation during soldering, and reference numeral 37 is Ag.
It is a conductive material such as paste.
【００４１】次に、上記構成のチップ部品型ＬＥＤの製
造方法について、図６を参照して説明する。この製造方
法は、請求項４に対応している。Next, a method of manufacturing the chip component type LED having the above structure will be described with reference to FIG. This manufacturing method corresponds to claim 4.
【００４２】第１の工程では、絶縁基板３０の表面３０
２、裏面３０１及び両側面３０３，３０４に金属層２
７，２８を形成し、この後、表面３０２のＬＥＤチップ
２１を実装する部分２３の金属層を除去する。ただし、
ＬＥＤチップ２１を実装する部分２３の金属層を除去さ
れた後の金属層２７，２８は、この時点では絶縁基板３
０の裏面３０１側で連続した１枚の金属層である〔図６
（ａ）参照〕。In the first step, the surface 30 of the insulating substrate 30 is
2, the metal layer 2 on the back surface 301 and both side surfaces 303 and 304
7 and 28 are formed, and thereafter, the metal layer of the portion 23 of the surface 302 where the LED chip 21 is mounted is removed. However,
The metal layers 27 and 28 after the metal layer of the portion 23 on which the LED chip 21 is mounted are removed are the insulating substrate 3 at this point.
0 is a continuous metal layer on the back surface 301 side [FIG.
(See (a)].
【００４３】第２の工程では、レーザ光を前記絶縁基板
３０のＬＥＤチップ実装部分２３に照射して、裏面３０
１の金属層２７まで達する貫通穴３２を形成する。レー
ザ光で絶縁基板３０の対象エリアを除去すると、レーザ
光は中心部から広がるように絶縁部を除去していくた
め、形成された貫通穴３２の内周面は自然と湾曲面３２
１に形成される〔図６（ｂ）参照〕。つまり、レーザ光
を絶縁基板３０の表面３０２側から照射することによ
り、貫通穴３２の内周面は、絶縁基板３０の裏面３０１
側から表面３０２側に向かって漸次拡開する湾曲面３２
１に形成される。In the second step, the LED chip mounting portion 23 of the insulating substrate 30 is irradiated with a laser beam so that the back surface 30 is exposed.
A through hole 32 reaching the first metal layer 27 is formed. When the target area of the insulating substrate 30 is removed by the laser light, the insulating portion is removed so that the laser light spreads from the central portion, so that the inner peripheral surface of the formed through hole 32 naturally has the curved surface 32.
1 (see FIG. 6B). In other words, by irradiating the laser light from the front surface 302 side of the insulating substrate 30, the inner peripheral surface of the through hole 32 becomes the back surface 301 of the insulating substrate 30.
Surface 32 that gradually expands from the side toward the surface 302
1 is formed.
【００４４】ただし、貫通穴３２の形成は、レーザ光に
よる加工の他、薬品による樹脂部のエッチングや機械加
工（ドリルによる穴開け加工等）でもよい。エッチング
の場合には、レーザ光による加工と同様に、中心部から
広がるように絶縁部を除去していくため、形成された貫
通穴３２の内周壁は自然と湾曲面３２１に形成される。However, the formation of the through hole 32 may be performed by laser beam processing, etching of the resin portion by chemicals, or mechanical processing (drilling processing by a drill, etc.). In the case of etching, since the insulating portion is removed so as to spread from the central portion, as in the case of processing with laser light, the inner peripheral wall of the formed through hole 32 is naturally formed on the curved surface 321.
【００４５】第３の工程では、貫通穴３２の内面（周面
及び底面）に、金属層２７を延設する形で金属層２９を
形成する〔図６（ｃ）参照〕。貫通穴３２内に金属層２
９を形成するのは、ＬＥＤチップ２１の点灯時の光の反
射効率を向上させるためであるが、絶縁基板３０が白色
の樹脂である場合には、貫通穴３２の内周面も白色であ
ることから、この場合には金属層２９は無くてもよい
（図７参照）。In the third step, the metal layer 29 is formed on the inner surface (peripheral surface and bottom surface) of the through hole 32 by extending the metal layer 27 (see FIG. 6C). Metal layer 2 in through hole 32
The reason for forming 9 is to improve the reflection efficiency of light when the LED chip 21 is turned on. However, when the insulating substrate 30 is a white resin, the inner peripheral surface of the through hole 32 is also white. Therefore, in this case, the metal layer 29 may be omitted (see FIG. 7).
【００４６】第４の工程では、絶縁基板３０の表面３０
２及び裏面３０１に形成した金属層をそれぞれ分離して
１対の電極層（最終的な形状であるカソード側の金属層
２７とアノード側の金属層２８）を形成する〔図６
（ｄ）参照〕。In the fourth step, the surface 30 of the insulating substrate 30 is
2 and the metal layer formed on the back surface 301 are separated to form a pair of electrode layers (the metal layer 27 on the cathode side and the metal layer 28 on the anode side in the final shape) (FIG. 6).
See (d)].
【００４７】この後、絶縁基板３０の裏面３０１に、は
んだ付け時の絶縁性を確保するためのレジスト層３６を
形成する〔図６（ｅ）参照〕。つまり、レジスト層３６
によって、完成したチップ部品型ＬＥＤをはんだ付けす
る際の、裏面でのショートを防止する。After that, a resist layer 36 for ensuring the insulating property at the time of soldering is formed on the back surface 301 of the insulating substrate 30 [see FIG. 6 (e)]. That is, the resist layer 36
This prevents a short circuit on the back surface when the completed chip component type LED is soldered.
【００４８】第５の工程では、貫通穴３２内の底面３２
２である金属層２９に、Ａｇペースト等の導電材料３７
を用いてＬＥＤチップ２１を実装し、このＬＥＤチップ
２１と絶縁基板３０の表面３０２に形成された他方の金
属層２８とを、Ａｕ等の金属細線２２で接続する。そし
て、第６の工程で、ＬＥＤチップ２１と金属細線２２と
を透光性の樹脂３１にて封止する。これにより、図４に
示す構造のチップ部品型ＬＥＤが作製される。 〔実施例３〕図８は、本発明のチップ部品型ＬＥＤの他
の実施例を示す断面図であり、図１に示すチップ部品型
ＬＥＤの変形例である。In the fifth step, the bottom surface 32 in the through hole 32 is
2 to the metal layer 29, a conductive material 37 such as Ag paste
The LED chip 21 is mounted by using, and the LED chip 21 and the other metal layer 28 formed on the surface 302 of the insulating substrate 30 are connected by a metal thin wire 22 such as Au. Then, in a sixth step, the LED chip 21 and the thin metal wire 22 are sealed with a translucent resin 31. As a result, a chip component type LED having the structure shown in FIG. 4 is manufactured. [Embodiment 3] FIG. 8 is a cross-sectional view showing another embodiment of the chip part type LED of the present invention, which is a modification of the chip part type LED shown in FIG.
【００４９】同図において、貫通穴５２が形成された絶
縁基板５０の表面５０２に金属層４７，４８が形成さ
れ、裏面５０１に金属薄板４５，４６が添設されてい
る。また、貫通穴５２の内周面は、本実施例では円筒形
状に形成されており、傾斜面とはされていない。In the figure, metal layers 47 and 48 are formed on the front surface 502 of the insulating substrate 50 in which the through holes 52 are formed, and metal thin plates 45 and 46 are attached to the back surface 501. Further, the inner peripheral surface of the through hole 52 is formed in a cylindrical shape in this embodiment, and is not an inclined surface.
【００５０】また、表面５０２の金属層４７と裏面５０
１の金属薄板４５とを接続し、かつ貫通穴５２の内周面
及び底面５２２（金属薄板４５）まで延設するように一
方の配線パターン４９が形成され、表面５０２の金属層
４８と裏面５０１の金属薄板４６とを接続するように他
方の配線パターン４４が形成されている。Further, the metal layer 47 on the front surface 502 and the back surface 50
One wiring pattern 49 is formed so as to connect to the first metal thin plate 45 and extend to the inner peripheral surface of the through hole 52 and the bottom surface 522 (metal thin plate 45), and the metal layer 48 on the front surface 502 and the back surface 501. The other wiring pattern 44 is formed so as to be connected to the metal thin plate 46.
【００５１】そして、このように形成された貫通穴５２
内の底面５２２（金属薄板４５）にＬＥＤチップ４１が
実装され、このＬＥＤチップ４１と絶縁基板５０の表面
５０２に形成された他方の配線パターン４４とがＡｕ等
の金属細線４２で接続されている。Then, the through hole 52 formed in this way
The LED chip 41 is mounted on the inner bottom surface 522 (thin metal plate 45), and the LED chip 41 and the other wiring pattern 44 formed on the front surface 502 of the insulating substrate 50 are connected by a thin metal wire 42 such as Au. .
【００５２】また、絶縁基板５０の表面５０２に反射ケ
ース板５３が添設されており、この反射ケース板５３
に、ＬＥＤチップ４１と金属細線４２とを内包する大径
の貫通穴５４が形成されている。この貫通穴５４は、反
射ケース板５３の裏面５３１側から表面５３２側に向か
って漸次拡開する傾斜面５４１に形成されている。そし
て、絶縁基板５０の貫通穴５２及び反射ケース板５３の
貫通穴５４に透明樹脂５１が充填されて、ＬＥＤチップ
４１と金属細線４２とが樹脂封止された構造となってい
る。なお、図中の符号５６は、はんだ付け時の絶縁性を
確保するためのレジスト層、符号５７はＡｇペースト等
の導電材料である。Further, a reflection case plate 53 is attached to the surface 502 of the insulating substrate 50, and the reflection case plate 53 is provided.
A large-diameter through hole 54 that encloses the LED chip 41 and the thin metal wire 42 is formed therein. The through hole 54 is formed in the inclined surface 541 that gradually expands from the back surface 531 side to the front surface 532 side of the reflection case plate 53. The transparent resin 51 is filled in the through hole 52 of the insulating substrate 50 and the through hole 54 of the reflection case plate 53, and the LED chip 41 and the thin metal wire 42 are resin-sealed. Reference numeral 56 in the drawing is a resist layer for ensuring insulation during soldering, and reference numeral 57 is a conductive material such as Ag paste.
【００５３】次に、上記構成のチップ部品型ＬＥＤの製
造方法について、図９を参照して説明する。Next, a method of manufacturing the chip component type LED having the above structure will be described with reference to FIG.
【００５４】第１の工程では、表面５０２に金属層４
７，４８を有する絶縁基板５０に、貫通穴５２を開設
し、裏面５０１に金属層４５，４６を貼り合わせる。た
だし、このときの金属層４５，４６は、この時点では連
続した１枚の金属層である〔図９（ａ）〕。In the first step, the metal layer 4 is formed on the surface 502.
A through hole 52 is opened in an insulating substrate 50 having 7, 48, and metal layers 45, 46 are attached to a back surface 501. However, the metal layers 45 and 46 at this time are one continuous metal layer at this time [FIG. 9 (a)].
【００５５】また、貫通穴５２の形成に際しては、裏面
５０１に金属層４５，４６を貼り合わせる前に行うこと
から、機械的なドリル等によって開けることができる。
そのため、絶縁基板５０を何枚も重ねて、各絶縁基板５
０に貫通穴５２を一度に開けることが可能となり、低コ
スト化が実現できる。Since the through hole 52 is formed before the metal layers 45 and 46 are attached to the back surface 501, it can be opened by a mechanical drill or the like.
Therefore, by stacking a number of insulating substrates 50, each insulating substrate 5
It is possible to open the through holes 52 at a time, and it is possible to realize cost reduction.
【００５６】第２の工程では、無電解及び電解メッキ法
を用いて、上記構成の絶縁基板５０の表面５０２、裏面
５０１及び両側面５０３，５０４と、貫通穴５２の内周
面５２１及び底面５２２とにメッキ層５５を形成する。
ここで、絶縁基板５０の表面とは、具体的には表面５０
２に形成された金属層４７，４８の表面のことであり、
絶縁基板５０の裏面とは、具体的には金属層４５，４６
の表面のことである〔図９（ｂ）〕。In the second step, the front surface 502, the back surface 501 and the both side surfaces 503 and 504 of the insulating substrate 50 having the above-mentioned structure and the inner peripheral surface 521 and the bottom surface 522 of the through hole 52 are used by the electroless and electrolytic plating methods. A plating layer 55 is formed on the surface.
Here, the surface of the insulating substrate 50 is specifically the surface 50.
2 is the surface of the metal layers 47 and 48 formed in 2.
The back surface of the insulating substrate 50 specifically refers to the metal layers 45 and 46.
The surface of the [Fig. 9 (b)].
【００５７】第３の工程では、絶縁基板５０の裏面側の
メッキ層５５〔図９（ｂ）参照〕を金属層４５，４６と
ともに分離処理してそれぞれ配線パターン４４，４９を
形成する。分離処理は、例えばエッチングやレーザ加工
等で金属部分を除去することにより行う。これにより、
基板の処理を完了する。また、絶縁基板５０の裏面５０
１には、はんだ付け時の絶縁性を確保するためのレジス
ト層５６を形成する〔図９（ｃ）〕。In the third step, the plating layer 55 (see FIG. 9B) on the back surface side of the insulating substrate 50 is separated together with the metal layers 45 and 46 to form wiring patterns 44 and 49, respectively. The separation process is performed by removing the metal portion by etching or laser processing, for example. This allows
The processing of the substrate is completed. In addition, the back surface 50 of the insulating substrate 50
1 is formed with a resist layer 56 for ensuring insulation during soldering [FIG. 9 (c)].
【００５８】第４の工程では、このようにして形成した
絶縁基板５０の表面５０２側に、ＬＥＤチップ４１と金
属細線４２とを内包する大径の貫通穴５４が形成された
反射ケース板５３を添設する〔図９（ｄ）〕。In the fourth step, the reflection case plate 53 having a large-diameter through hole 54 containing the LED chip 41 and the thin metal wire 42 is formed on the surface 502 side of the insulating substrate 50 thus formed. It is attached [Fig. 9 (d)].
【００５９】第５の工程では、絶縁基板５０の貫通穴５
２内の底面５２２（具体的には、金属薄板４５上に形成
されたメッキ層）に、Ａｇペースト等の導電材料５７を
用いてＬＥＤチップ４１を実装し、このＬＥＤチップ４
１と絶縁基板５０の表面５０２に形成された他方の配線
パターン４４とを、Ａｕ等の金属細線４２で接続する
〔図９（ｅ）〕。In the fifth step, the through hole 5 of the insulating substrate 50 is formed.
The LED chip 41 is mounted on the bottom surface 522 (specifically, the plating layer formed on the metal thin plate 45) in 2 by using a conductive material 57 such as Ag paste.
1 and the other wiring pattern 44 formed on the surface 502 of the insulating substrate 50 are connected by a fine metal wire 42 of Au or the like [FIG. 9 (e)].
【００６０】第６の工程では、絶縁基板５０の貫通穴５
２及び反射ケース板５３の貫通穴５４に透明樹脂５１を
注入して、ＬＥＤチップ４１と金属細線４２とを完全に
樹脂封止する。これにより、図８に示す構造のチップ部
品型ＬＥＤが作製される。In the sixth step, the through hole 5 of the insulating substrate 50 is formed.
2 and the transparent resin 51 is injected into the through hole 54 of the reflection case plate 53 to completely seal the LED chip 41 and the thin metal wire 42 with resin. As a result, a chip component type LED having the structure shown in FIG. 8 is manufactured.
【００６１】図８に示す構造では、反射ケース板５３を
絶縁基板５０とは別に設けることにより、反射ケース板
５３に形成する貫通穴５４を大きくできるので、傾斜面
５４１も大きく広いものとなり、その分上方への反射効
率が向上するものである。また、樹脂封止は、貫通穴５
２及び５４に樹脂を注入するだけでよく、形状を保持す
るための型を必要としないことから、簡単に行えるとい
った利点がある。因みに、図１４乃至図１６に示す従来
のチップ部品型ＬＥＤでは、樹脂封止のための型が必要
となる。In the structure shown in FIG. 8, the through hole 54 formed in the reflective case plate 53 can be made large by providing the reflective case plate 53 separately from the insulating substrate 50, so that the inclined surface 541 also becomes large and wide. This improves the reflection efficiency upward. Moreover, the resin sealing is performed through the through hole 5.
Since it is only necessary to inject the resin into 2 and 54 and a mold for holding the shape is not required, there is an advantage that it can be easily performed. Incidentally, the conventional chip component type LED shown in FIGS. 14 to 16 requires a mold for resin sealing.
【００６２】さらに、ＬＥＤチップ４１を直接金属薄板
４５上に実装することから、従来の基板が不要となり、
その分薄型化が可能になるとともに、材料コストの低減
も図ることができる。さらにまた、ＬＥＤチップ４１を
実装する周辺部以外は絶縁基板５３で保持されているた
め、十分な強度が確保でき、金属細線４２の取り付けや
樹脂封止等も安定して行えるものである。Furthermore, since the LED chip 41 is directly mounted on the thin metal plate 45, the conventional substrate becomes unnecessary,
Therefore, the thickness can be reduced, and the material cost can be reduced. Furthermore, since the insulating substrate 53 holds the LED chip 41 except the peripheral portion thereof, sufficient strength can be secured, and the mounting of the thin metal wires 42 and the resin sealing can be stably performed.
【００６３】なお、この反射ケース板５３を設ける構成
を、図４及び図５に示す構造のチップ部品型ＬＥＤに適
用することが可能である。このときの製造方法は、上記
実施例２で示したレジスト層３６を形成する第５の工程
〔図６（ｅ）〕の後に、上記した第４の工程〔図９
（ｄ）〕から第６の工程までを行えばよい。 〔実施例４〕図１０乃至図１３は、図１及び図４に示す
チップ部品型ＬＥＤのさらに変形例を示すもので、封止
樹脂１１，３１の表面をレンズ形状としたものである。
これにより、ＬＥＤチップ１，２１の点灯時、斜め上方
に散乱状態で放出される光がこのレンズ面で集光されて
上方に向かうことから、上方への反射効率がさらに向上
することになる。The structure provided with the reflection case plate 53 can be applied to the chip part type LED having the structure shown in FIGS. 4 and 5. The manufacturing method at this time is such that, after the fifth step (FIG. 6E) of forming the resist layer 36 shown in the second embodiment, the fourth step [FIG.
(D)] to the sixth step may be performed. [Embodiment 4] FIGS. 10 to 13 show a further modified example of the chip part type LED shown in FIGS. 1 and 4, in which the surfaces of the sealing resins 11 and 31 are shaped like lenses.
As a result, when the LED chips 1 and 21 are turned on, the light emitted obliquely upward in a scattered state is collected by this lens surface and travels upward, so that the upward reflection efficiency is further improved.
【００６４】図１０及び図１１に示すものは、封止樹脂
１１，３１の形状を半円柱状（いわゆるかまぼこ型）に
形成したもの、図１２に示すものは、封止樹脂１１，３
１の天面の一部を凹ませてレンズ形状（破線により示
す）５８に加工（インナーレンズ）したもの、図１３に
示すものは、封止樹脂１１，３１の天面に半円球状のレ
ンズ５９を付加したものである。図１２に示すインナー
レンズに加工したものでは、反射効率の向上の他、チッ
プマウンター等での表面実装時に吸着固定しやすいとい
った効果をも併せ持っている。10 and 11, the sealing resins 11 and 31 are formed in a semi-cylindrical shape (so-called kamaboko type), and the one shown in FIG. 12 is the sealing resins 11 and 3.
1 is a lens having a semispherical shape on the top surfaces of the sealing resins 11 and 31, in which a part of the top surface of 1 is processed (inner lens) into a lens shape (indicated by a broken line) 58 (inner lens). 59 is added. The processed inner lens shown in FIG. 12 has not only the improvement of the reflection efficiency but also the effect of easily adsorbing and fixing at the time of surface mounting with a chip mounter or the like.
【００６５】なお、本実施例では、絶縁基板に対して１
対のパターンを有する１チップＬＥＤランプとしたが、
同手法で複数のパターンを形成し、複数個のＬＥＤチッ
プを接続させると、容易に多色（複数ＬＥＤチップ）発
光のＬＥＤランプを構成できる。In this embodiment, the insulating substrate is 1
Although it is a 1-chip LED lamp having a pair of patterns,
By forming a plurality of patterns by the same method and connecting a plurality of LED chips, a multicolor (plural LED chips) emitting LED lamp can be easily constructed.
【００６６】[0066]
【発明の効果】本発明のチップ部品型ＬＥＤは、貫通穴
が形成された絶縁基板の裏面に、一方の配線パターンを
形成する金属薄板を添設し、貫通穴内の金属薄板上にＬ
ＥＤチップを実装し、このＬＥＤチップと絶縁基板の表
面に形成された他方の配線パターンとを電気的に接続し
て透明樹脂により封止した構造としたので、ＬＥＤチッ
プを直接金属薄板上に実装することから、従来の基板が
不要となり、その分薄型化が可能になるとともに、材料
コストの低減も図ることができる。また、ＬＥＤチップ
を実装する周辺部以外は絶縁基板で保持されているた
め、十分な強度が確保でき、金属細線の取り付けや樹脂
封止等も安定して行えるものである。According to the LED of chip component type of the present invention, a thin metal plate for forming one wiring pattern is additionally provided on the back surface of an insulating substrate having a through hole, and L is formed on the thin metal plate in the through hole.
Since the ED chip is mounted and the LED chip and the other wiring pattern formed on the surface of the insulating substrate are electrically connected and sealed with transparent resin, the LED chip is directly mounted on the thin metal plate. As a result, the conventional substrate is not required, the thickness can be reduced accordingly, and the material cost can be reduced. Further, since the insulating substrate holds the parts other than the peripheral part where the LED chip is mounted, sufficient strength can be secured, and the mounting of the fine metal wires and the resin sealing can be stably performed.
【００６７】また、本発明のチップ部品型ＬＥＤは、上
記構成に加えて、貫通穴の内周面を、絶縁基板の裏面側
から表面側に向かって漸次拡開する傾斜面に形成したの
で、ＬＥＤチップの点灯時、側面に向かう光は傾斜面で
反射されて上方に向かうことから、上方への反射効率が
向上するものである。In addition to the above structure, the chip part type LED of the present invention has the inner peripheral surface of the through hole formed into an inclined surface which gradually expands from the back surface side to the front surface side of the insulating substrate. When the LED chip is turned on, the light traveling toward the side surface is reflected by the inclined surface and travels upward, so that the efficiency of upward reflection is improved.
【００６８】また、本発明に係わるチップ部品型ＬＥＤ
の製造方法は、絶縁基板に貫通穴を開設した後、裏面に
金属層を形成する第１の工程と、無電解及び電解メッキ
法を用いて前記絶縁基板の表面、裏面及び側面と前記貫
通穴の内周面とにメッキ層を形成する第２の工程と、絶
縁基板の裏面に形成した前記金属層及び絶縁基板の表
面、裏面及び側面に形成した前記メッキ層を分離して１
対の電極層を形成する第３の工程と、前記貫通穴内の底
面である前記金属層に導電材料を用いてＬＥＤチップを
実装し、このＬＥＤチップと前記絶縁基板の表面に形成
された他方の電極層とを導電材料で接続する第４の工程
と、前記ＬＥＤチップと前記導電材料とを透光性の樹脂
にて封止する第５の工程とを備えた構成としたので、第
１の工程では、絶縁基板に貫通穴を開設した後、裏面に
金属層を形成することから、貫通穴は機械的なドリル等
によっても開けることができる。そのため、絶縁基板を
何枚も重ねて貫通穴を一度に開けることが可能となるこ
とから、低コスト化が実現できる。また、絶縁基板の裏
面に金属層を形成する方法として、金属薄板を単に接着
剤で貼り合わせるといった簡単な方法を用いることがで
きる。Further, a chip part type LED according to the present invention
The manufacturing method of the method comprises the steps of forming a through hole in an insulating substrate and then forming a metal layer on the back surface, and the front surface, the back surface and the side surface of the insulating substrate and the through hole using an electroless and electrolytic plating method. A second step of forming a plating layer on the inner peripheral surface of the insulating substrate, and separating the metal layer formed on the back surface of the insulating substrate and the plating layer formed on the front surface, back surface, and side surfaces of the insulating substrate from 1
A third step of forming a pair of electrode layers, and an LED chip is mounted on the metal layer, which is the bottom surface in the through hole, using a conductive material, and the other of the LED chip and the other formed on the surface of the insulating substrate is mounted. Since the configuration includes the fourth step of connecting the electrode layer with a conductive material and the fifth step of sealing the LED chip and the conductive material with a transparent resin, In the process, since the metal layer is formed on the back surface after forming the through hole in the insulating substrate, the through hole can be opened by a mechanical drill or the like. Therefore, it is possible to stack a plurality of insulating substrates and form the through holes at one time, and thus it is possible to realize cost reduction. Further, as a method of forming the metal layer on the back surface of the insulating substrate, a simple method of simply sticking a thin metal plate with an adhesive can be used.
【００６９】また、本発明に係わるチップ部品型ＬＥＤ
の製造方法は、表面のＬＥＤチップを実装する部分を除
いて、絶縁基板の表面、裏面及び側面に金属層を形成す
る第１の工程と、レーザ光を前記絶縁基板のＬＥＤチッ
プ実装部分に照射して、裏面の金属層まで達する貫通穴
を形成する第２の工程と、前記貫通穴の内周面に金属層
を形成する第３の工程と、絶縁基板の表面、裏面及び側
面に形成した前記金属層を分離して１対の電極層を形成
する第４の工程と、前記貫通穴内の底面である前記金属
層に導電材料を用いてＬＥＤチップを実装し、このＬＥ
Ｄチップと前記絶縁基板の表面に形成された他方の電極
層とを導電材料で接続する第５の工程と、前記ＬＥＤチ
ップと前記導電材料とを透光性の樹脂にて封止する第６
の工程とを備えた構成としたので、第２の工程では、レ
ーザ光を絶縁基板のＬＥＤチップ実装部分に照射して、
裏面の金属層まで達する貫通穴を形成することから、レ
ーザ光で絶縁基板の対象エリアを除去すると、レーザ光
は中心部から広がるように絶縁部を除去していくため、
形成された貫通穴の内周面を同時に傾斜面（湾曲面）に
形成することができる。つまり、レーザ光を照射するだ
けで、貫通穴の形成の内周壁の傾斜面の形成とを同時に
行うことができるものである。Further, a chip part type LED according to the present invention
In the manufacturing method, the first step of forming a metal layer on the front surface, the back surface and the side surface of the insulating substrate except for the portion where the LED chip is mounted on the front surface, and irradiating the LED chip mounting portion of the insulating substrate with laser light. Then, the second step of forming a through hole reaching the metal layer on the back surface, the third step of forming a metal layer on the inner peripheral surface of the through hole, and the formation on the front surface, back surface and side surface of the insulating substrate. A fourth step of separating the metal layer to form a pair of electrode layers, and mounting an LED chip using a conductive material on the metal layer that is the bottom surface in the through hole,
A fifth step of connecting the D chip and the other electrode layer formed on the surface of the insulating substrate with a conductive material, and a sixth step of sealing the LED chip and the conductive material with a translucent resin
In the second step, the laser light is applied to the LED chip mounting portion of the insulating substrate,
Since the through hole that reaches the metal layer on the back surface is formed, when the target area of the insulating substrate is removed with laser light, the insulating portion is removed so that the laser light spreads from the central portion.
The inner peripheral surface of the formed through hole can be simultaneously formed as an inclined surface (curved surface). That is, the formation of the through hole and the formation of the inclined surface of the inner peripheral wall can be simultaneously performed only by irradiating the laser beam.
【図１】本発明の実施例１に対応したチップ部品型ＬＥ
Ｄの断面図である。FIG. 1 is a chip part type LE corresponding to a first embodiment of the present invention.
It is sectional drawing of D.
【図２】本発明の実施例１に対応したチップ部品型ＬＥ
Ｄの平面図である。FIG. 2 is a chip component type LE corresponding to the first embodiment of the present invention.
It is a top view of D.
【図３】図１に示す構造のチップ部品型ＬＥＤの製造方
法を説明するための工程図である。FIG. 3 is a process drawing for explaining the method for manufacturing the chip component type LED having the structure shown in FIG.
【図４】本発明の実施例２に対応したチップ部品型ＬＥ
Ｄの断面図である。FIG. 4 is a chip component type LE corresponding to the second embodiment of the present invention.
It is sectional drawing of D.
【図５】本発明の実施例２に対応したチップ部品型ＬＥ
Ｄの平面図である。FIG. 5 is a chip part type LE corresponding to the second embodiment of the present invention.
It is a top view of D.
【図６】図４に示す構造のチップ部品型ＬＥＤの製造方
法を説明するための工程図である。FIG. 6 is a process drawing for explaining the manufacturing method of the chip part type LED having the structure shown in FIG.
【図７】本発明の実施例２に対応したチップ部品型ＬＥ
Ｄの変形例を示す断面図である。FIG. 7 is a chip part type LE corresponding to Example 2 of the invention.
It is sectional drawing which shows the modification of D.
【図８】本発明の実施例３に対応したチップ部品型ＬＥ
Ｄの断面図である。FIG. 8 is a chip part type LE corresponding to Example 3 of the invention.
It is sectional drawing of D.
【図９】図８に示す構造のチップ部品型ＬＥＤの製造方
法を説明するための工程図である。FIG. 9 is a process chart for explaining the manufacturing method of the chip component type LED having the structure shown in FIG.
【図１０】図１及び図４に示すチップ部品型ＬＥＤのさ
らに変形例を示すもので、封止樹脂の形状を半円柱状に
形成した例を示す正面図である。FIG. 10 is a front view showing a further modification of the chip component type LED shown in FIGS. 1 and 4 and showing an example in which the shape of the sealing resin is formed in a semi-cylindrical shape.
【図１１】図１及び図４に示すチップ部品型ＬＥＤのさ
らに変形例を示すもので、封止樹脂の形状を半円柱状に
形成した例を示す側面図である。FIG. 11 is a side view showing a further modified example of the chip component type LED shown in FIGS. 1 and 4, and showing an example in which the shape of the sealing resin is formed in a semi-cylindrical shape.
【図１２】図１及び図４に示すチップ部品型ＬＥＤのさ
らに変形例を示すもので、封止樹脂の天面の一部を凹ま
せてレンズ形状に加工した例を示す正面図である。FIG. 12 is a front view showing a further modified example of the chip component type LED shown in FIGS. 1 and 4, and showing an example in which a part of the top surface of the sealing resin is recessed to be processed into a lens shape.
【図１３】図１及び図４に示すチップ部品型ＬＥＤのさ
らに変形例を示すもので、封止樹脂の天面に半円球状の
レンズを付加した例を示す正面図である。FIG. 13 is a front view showing a further modification of the chip component type LED shown in FIGS. 1 and 4, and showing an example in which a hemispherical lens is added to the top surface of the sealing resin.
【図１４】従来のチップ部品型ＬＥＤの構造の一例を示
す断面図である。FIG. 14 is a cross-sectional view showing an example of the structure of a conventional chip component type LED.
【図１５】従来のチップ部品型ＬＥＤの構造の一例を示
す断面図である。FIG. 15 is a cross-sectional view showing an example of the structure of a conventional chip component type LED.
【図１６】従来のチップ部品型ＬＥＤの構造の一例を示
す断面図である。FIG. 16 is a cross-sectional view showing an example of the structure of a conventional chip component type LED.
１，２１ ＬＥＤチップ ２，２２ 金属細線 ４，９ 配線パターン ５，６ 金属薄板 ７，８，２７，２８ 金属層 １０，３０ 絶縁基板 １１，３１ 透明樹脂 １２，３２ 貫通穴 １２１，３２１ 傾斜面 １１，３１ 透明樹脂 1,21 LED chip 2,22 Metal thin wire 4,9 Wiring pattern 5,6 Metal thin plate 7,8,27,28 Metal layer 10,30 Insulating substrate 11,31 Transparent resin 12,32 Through hole 121,321 Slope 11 , 31 Transparent resin
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| JP06027956AJP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP06027956AJP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
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| JPH07235696Atrue JPH07235696A (en) | 1995-09-05 |
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|---|---|---|---|
| JP06027956AExpired - Fee RelatedJP3137823B2 (en) | 1994-02-25 | 1994-02-25 | Chip component type LED and method of manufacturing the same |
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