【０００１】[0001]
【産業上の利用分野】本発明は、例えば熱処理炉の炉内
温度を測定する温度計に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermometer for measuring the temperature inside a heat treatment furnace, for example.
【０００２】[0002]
【従来の技術】例えば、半導体ウエハの製造において
は、酸化、拡散、アニールなどの処理を行うために、各
種の熱処理装置が使用されている。その一般的な熱処理
装置は、処理炉内に被処理体である半導体ウエハを収容
する反応管（プロセスチューブともいう）を設け、この
反応管の周囲に反応管内を加熱する加熱部を設けて構成
されている。2. Description of the Related Art For example, in the manufacture of semiconductor wafers, various heat treatment apparatuses are used to perform processes such as oxidation, diffusion and annealing. The general heat treatment apparatus is configured by providing a reaction tube (also referred to as a process tube) for accommodating a semiconductor wafer, which is an object to be processed, in a processing furnace, and providing a heating unit for heating the inside of the reaction tube around the reaction tube. Has been done.
【０００３】また、前記半導体ウエハの処理に必要とな
る温度を管理するために、前記加熱部には温度センサが
設けられている。そして、この温度センサの性能を維持
するために、例えば反応管の洗浄等が行われて処理炉内
の条件が変った時などに、処理を開始する前に反応管内
に温度計を挿入して実際の処理と同じように反応管内を
加熱して温度を計り、温度センサが正常に機能している
か否かの検査及び較正が適宜行われている。A temperature sensor is provided in the heating section in order to control the temperature required for processing the semiconductor wafer. In order to maintain the performance of this temperature sensor, insert a thermometer into the reaction tube before starting the process, for example, when the conditions inside the processing furnace change due to cleaning of the reaction tube. As in the actual process, the inside of the reaction tube is heated to measure the temperature, and the inspection and calibration as to whether or not the temperature sensor is functioning normally are performed appropriately.
【０００４】この場合に使用される前記温度計は、図６
に示すように一対の熱電対素線２０ａ，２０ｂを長手方
向に挿通する素線挿通孔２１，２１を有する長尺の絶縁
棒状体１８と、この絶縁棒状体１８の先端部（上端部）
より延出された一対の熱電対素線２０ａ，２０ｂを互に
接合してなる熱電対２０と、この熱電対２０を先端部に
有する絶縁棒状体１８を収容する保護管１７とから主に
構成されている。なお、前記熱電対素線２０ａ，２０ｂ
は絶縁棒状体１８の基端部（下端部）に固定されてい
る。熱電対２０は例えば白金と白金ロジウムの組合せか
らなり、保護管１７は耐熱性の高い材料例えば炭化ケイ
素（ＳｉＣ）により形成されている。The thermometer used in this case is shown in FIG.
As shown in FIG. 3, a long insulating rod-shaped body 18 having wire-hole insertion holes 21 and 21 through which a pair of thermocouple wires 20a and 20b are inserted in the longitudinal direction, and a tip portion (upper end portion) of the insulating rod-shaped body 18.
Mainly composed of a thermocouple 20 formed by joining a pair of further extended thermocouple wires 20a, 20b to each other, and a protective tube 17 for accommodating an insulating rod-shaped body 18 having the thermocouple 20 at its tip. Has been done. The thermocouple wires 20a, 20b
Is fixed to the base end (lower end) of the insulating rod-shaped body 18. The thermocouple 20 is made of, for example, a combination of platinum and platinum rhodium, and the protective tube 17 is made of a material having high heat resistance, for example, silicon carbide (SiC).
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前記温
度計においては、熱電対２０が絶縁棒状体１８の先端部
に延出した状態で設けられていること及び絶縁棒状体１
８の熱膨張率（８．０×１０-6）に対して熱電対素線２
０ａ，２０ｂの熱膨張率（１１．１×１０-6）の方が大
きいことから、熱電線素線２０ａ，２０ｂの熱膨張によ
り熱電対２０が絶縁棒状体１８の先端部から更に延出し
て保護管１７の内壁に接触する場合がある。この場合、
熱電対２０を構成する高融点（１７７０℃）の白金が保
護管１７を構成する炭化ケイ素のケイ素（Ｓｉ）と反応
して低融点（８３０℃）の合金となり、熱電対２０が断
線し易くなるという問題があった。However, in the thermometer, the thermocouple 20 is provided in a state of extending to the tip of the insulating rod-shaped body 18 and the insulating rod-shaped body 1.
For a coefficient of thermal expansion of 8 (8.0 × 10-6 ), thermocouple wire 2
Since the coefficient of thermal expansion (11.1 × 10−6 ) of 0a and 20b is larger, the thermocouple 20 further extends from the tip of the insulating rod-shaped body 18 due to the thermal expansion of the wires 20a and 20b. It may contact the inner wall of the protection tube 17. in this case,
The high melting point (1770 ° C.) platinum forming the thermocouple 20 reacts with the silicon (Si) of silicon carbide forming the protective tube 17 to form an alloy having a low melting point (830 ° C.), and the thermocouple 20 easily breaks. There was a problem.
【０００６】本発明は、前記問題点を解決すべくなされ
たもので、保護管との接触による熱電対の断線を防止す
ることができ、耐久性の向上を図った温度計を提供する
ことを目的とする。The present invention has been made to solve the above problems, and provides a thermometer capable of preventing disconnection of a thermocouple due to contact with a protective tube and improving durability. To aim.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に本発明は、一対の熱電対素線を長手方向に挿通する素
線挿通孔を有する長尺の絶縁棒状体と、この絶縁棒状体
の先端部より延出された一対の熱電対素線を互に接合し
てなる熱電対と、この熱電対を先端部に有する絶縁棒状
体を収容する耐熱性保護管とを備えた温度計において、
前記絶縁棒状体の先端部に前記熱電対を長手方向に熱膨
張移動可能に収容する所定深さの収容穴部を形成してな
ることを特徴とする。To achieve the above object, the present invention provides a long insulating rod-shaped body having a wire insertion hole for inserting a pair of thermocouple wires in the longitudinal direction, and this insulating rod-shaped body. In a thermometer equipped with a thermocouple formed by joining a pair of thermocouple wires extending from the tip of each other to each other, and a heat-resistant protective tube containing an insulating rod-shaped body having this thermocouple at the tip ,
It is characterized in that an accommodation hole portion having a predetermined depth for accommodating the thermocouple such that the thermocouple can be thermally expanded and moved in a longitudinal direction is formed at a tip end portion of the insulating rod-shaped body.
【０００８】[0008]
【作用】このように構成された本発明の温度計によれ
ば、熱電対が絶縁棒状体先端の収容穴部内で熱膨張移動
するようになるため、熱電対が保護管と接触するような
ことがない。従って、保護管との接触による熱電対の断
線を防止することが可能となり、耐久性の向上が図れ
る。According to the thermometer of the present invention constructed as described above, since the thermocouple comes to thermally expand and move in the accommodation hole portion at the tip of the insulating rod-like body, the thermocouple comes into contact with the protective tube. There is no. Therefore, it is possible to prevent disconnection of the thermocouple due to contact with the protective tube, and durability can be improved.
【０００９】[0009]
【実施例】以下に、本発明の一実施例を添付図面に基づ
いて詳述する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
【００１０】本発明を熱処理装置の温度計に適用した実
施例を示す図３において、１は被処理体である半導体ウ
エハＷを高温下で処理する縦型の処理炉で、この処理炉
１は中央部に円形の開口部２ａを有する水平のベースプ
レート２を備えている。このベースプレート２の開口部
２ａには下端が開口し且つその開口端にフランジ部３ａ
を有する縦長円筒状の石英製の処理管３が挿通され、こ
の処理管３のフランジ部３ａの周縁部がベースプレート
２にマニホールド４を介して取外可能に取付けられてい
る。また、処理管３の下側部には処理ガスを導入する導
入管部３ｂや処理ガスを排出する図示しない排出管部が
一体に形成されている。In FIG. 3 showing an embodiment in which the present invention is applied to a thermometer of a heat treatment apparatus, 1 is a vertical processing furnace for processing a semiconductor wafer W which is an object to be processed at a high temperature. A horizontal base plate 2 having a circular opening 2a at the center is provided. The lower end of the base plate 2 is opened in the opening 2a and the flange 3a is formed at the opening end.
A processing tube 3 made of quartz and having a vertically long cylindrical shape is inserted, and a peripheral portion of a flange portion 3a of the processing tube 3 is detachably attached to a base plate 2 via a manifold 4. Further, an introduction pipe portion 3b for introducing the processing gas and an exhaust pipe portion (not shown) for discharging the processing gas are integrally formed on the lower side of the processing pipe 3.
【００１１】前記処理管３の周縁部には処理管３内を加
熱する加熱部５が設けられ、この加熱部５と処理管３と
の間には加熱部５による加熱を均一にするための均熱管
６が処理管３を覆うようにして処理管３と同心円状に設
けられている。前記加熱部５は例えば二ケイ化モリブデ
ン（ＭｏＳｉ2）又はカンタル（商品名）等の抵抗発熱
線５ａをコイル状に巻いてなり、その外側及び上方には
これを覆うように断熱材７が設けられ、この断熱材７の
外側は図示しないアウターシェルで覆われている。加熱
部５は高さ方向に複数（例えば３〜５）のゾーンに分割
されると共に、各ゾーンに温度センサ８が配設され、そ
れぞれのゾーンが独立して温度制御されるようになって
いる。A heating section 5 for heating the inside of the processing tube 3 is provided at the peripheral portion of the processing tube 3, and a heating section 5 for uniform heating between the heating section 5 and the processing tube 3. A soaking tube 6 is provided concentrically with the processing tube 3 so as to cover the processing tube 3. The heating unit 5 is formed by winding a resistance heating wire 5a such as molybdenum disilicide (MoSi2 ) or Kanthal (trade name) in a coil shape, and a heat insulating material 7 is provided outside and above the resistance heating wire 5a so as to cover the resistance heating wire 5a. The heat insulating material 7 is covered with an outer shell (not shown). The heating unit 5 is divided into a plurality of zones (for example, 3 to 5) in the height direction, a temperature sensor 8 is provided in each zone, and the temperature of each zone is controlled independently. .
【００１２】前記加熱部５、断熱材７及びアウターシェ
ルは前記ベースプレート２上に支持されている。前記均
熱管６は耐熱性を有する材料、例えば炭化ケイ素（Ｓｉ
Ｃ）により下端が開口した縦長円筒状に形成され、その
下端部が前記ベースプレー２上に円環状の断熱支持体９
を介して支持されている。The heating part 5, the heat insulating material 7 and the outer shell are supported on the base plate 2. The soaking tube 6 is made of a heat-resistant material such as silicon carbide (Si).
C) is formed into a vertically long cylindrical shape having an open lower end, and the lower end of the heat insulating support 9 has an annular shape on the base plate 2.
Is supported through.
【００１３】前記処理管３の下方にはその下端開口を開
閉する蓋体１０が配置され、この蓋体１０上には多数枚
の半導体ウエハＷを水平状態で上下方向に間隔をおいて
多段に支持するウエハボート１１が保温筒１２を介して
載置されている。前記蓋体１０は昇降機構１３の昇降台
１３ａ上に取付けられ、この昇降機構１３により処理管
３内への前記ウエハボート１１の搬入及び搬出及び蓋体
１０の開閉が行われるようになっている。A lid 10 for opening and closing the lower end opening is disposed below the processing tube 3, and a large number of semiconductor wafers W are horizontally arranged in a multi-stage on the lid 10 in the vertical direction at intervals. A supporting wafer boat 11 is mounted via a heat retaining cylinder 12. The lid 10 is mounted on an elevating table 13a of an elevating mechanism 13, and the elevating mechanism 13 carries in and out the wafer boat 11 into and from the processing tube 3 and opens and closes the lid 10. .
【００１４】そして、このように構成された熱処理装置
の反応管３内には、例えば反応管３の洗浄等が行われて
処理炉１内の条件が変った時などに、処理を開始する前
に温度計１４が挿入され、実際の処理と同じように反応
管３内を加熱して温度を計ることにより、温度センサ８
の検査及び較正が行われる。この温度計１４は蓋体１０
に設けられた挿入孔１５から保温筒１２及びウエハボー
ト１１と干渉しないように反応管３内に垂直に挿入さ
れ、温度計１４の下端部が昇降機構１３の昇降台１３ａ
にブラケット１６を介して固定される。The inside of the reaction tube 3 of the heat treatment apparatus having the above-mentioned structure is treated before the treatment is started, for example, when the reaction tube 3 is cleaned and the conditions in the processing furnace 1 are changed. A thermometer 14 is inserted into the temperature sensor 8 to heat the inside of the reaction tube 3 and measure the temperature in the same manner as in the actual process.
Inspection and calibration are performed. This thermometer 14 is a lid 10.
Is inserted vertically into the reaction tube 3 so as not to interfere with the heat insulating cylinder 12 and the wafer boat 11 through the insertion hole 15 provided in the.
Is fixed to the bracket via a bracket 16.
【００１５】なお、この検査は、実際の処理と同じ条件
すなわち反応管３内に保温筒１２及びウエハボート１１
が存在する状態（但し、ウエハボート１１に半導体ウエ
ハＷがセットされていない状態）で行われる。また、検
査終了後には、前記温度計１４は蓋体１０の挿入孔１５
から引抜かれ、蓋体１０の挿入孔１５に図示しない盲蓋
が取付けられる。This inspection is carried out under the same conditions as in the actual processing, that is, in the reaction tube 3 with the heat-retaining cylinder 12 and the wafer boat 11.
Is present (however, the semiconductor wafer W is not set in the wafer boat 11). Further, after the inspection, the thermometer 14 has an insertion hole 15 in the lid 10.
Then, a blind lid (not shown) is attached to the insertion hole 15 of the lid body 10.
【００１６】前記温度計１４は、図４ないし図５に示す
ように下端が開放された長尺の保護管１７を有し、この
保護管１７内には前記加熱部５の各ゾーンに対応して長
さを違えた長尺の複数本（図示例では５本）の絶縁棒状
体（碍子）１８が下端開口部１７ａから挿入されてい
る。また、保護管１７の開口部１７ａには、これより前
記絶縁棒状体１８の下端部を少し延出させた状態で例え
ば保護管１７と同質のセラミック接着材からなる充填材
１９が充填され、これにより保護管１７内が密封される
と共に絶縁棒状体１８が固定されている。As shown in FIGS. 4 to 5, the thermometer 14 has a long protective tube 17 having an open lower end, and the protective tube 17 corresponds to each zone of the heating section 5. Insulating rod-shaped bodies (insulators) 18 of a plurality of lengths (five in the illustrated example) having different lengths are inserted from the lower end opening 17a. The opening 17a of the protective tube 17 is filled with a filler 19 made of, for example, the same ceramic adhesive material as that of the protective tube 17 with the lower end portion of the insulating rod 18 slightly extended therefrom. Thus, the inside of the protective tube 17 is sealed and the insulating rod-shaped body 18 is fixed.
【００１７】前記保護管１７は、耐熱性の高い材料例え
ば炭化ケイ素により、反応管３内の深さ以上の長さ例え
ば１ｍ程度以上の長さ及び所定の径例えば直径が１０ｍ
ｍ程度、内径が７ｍｍ程度の細管状に形成されている。
また、前記絶縁棒状体１８は、図１ないし図２に示すよ
うに絶縁材料である例えば高純度のアルミナ（Ａｌ
2Ｏ3）により例えば長径ｄ1が２．４ｍｍ程度、短径ｄ2
が１．７ｍｍ程度の断面楕円形の棒状に形成され、内部
にはその長手方向に一対の例えば直径が０．５ｍｍ程度
の熱電対素線２０ａ，２０ｂを挿通するための例えば内
径ｄ3が０．７ｍｍ程度の素線挿通孔２１，２１が所定
の間隔ｐ例えば１ｍｍ程度で形成されている。The protective tube 17 is made of a material having a high heat resistance, for example, silicon carbide, and has a length equal to or greater than the depth in the reaction tube 3 such as about 1 m and a predetermined diameter such as 10 m.
It is formed into a thin tube having a diameter of about m and an inner diameter of about 7 mm.
The insulating rod 18 is made of an insulating material such as high-purity alumina (Al) as shown in FIGS.
2 O3 ) has a major axis d1 of about 2.4 mm and a minor axis d2, for example.
Are formed in a rod shape having an elliptical cross section of about 1.7 mm, and inside thereof, for example, an inner diameter d3 for inserting a pair of thermocouple wires 20a, 20b having a diameter of about 0.5 mm is 0. The wire insertion holes 21 and 21 of about 7 mm are formed at a predetermined interval p, for example, about 1 mm.
【００１８】これら素線挿通孔２１，２１に例えば白金
からなる素線２０ａと白金ロジウムからなる素線２０ｂ
を別々に挿通し、素線挿通孔２１，２１の上端部から延
出された両素線２０ａ，２０ｂの上端部を互に所定の曲
率例えば半径が０．５ｍｍ程度で湾曲させて端部同士を
プラズマ溶接で接合することによりいわゆるＲ型の熱電
対２０が形成される。そして、この熱電対２０が熱電対
素線２０ａ，２０ｂの熱膨張により絶縁棒状体１８の上
端部から延出して保護管１７の内壁に接触することを防
止するために、絶縁棒状体１７の上端部には熱電対２０
を熱膨張移動可能に収容する収容穴部２２が形成されて
いる。In the wire insertion holes 21 and 21, for example, a wire 20a made of platinum and a wire 20b made of platinum rhodium are provided.
Are separately inserted, and the upper ends of both strands 20a, 20b extending from the upper ends of the strand insertion holes 21, 21 are curved with a predetermined curvature, for example, a radius of about 0.5 mm, so that the end portions are joined together. A so-called R-type thermocouple 20 is formed by joining the two by plasma welding. Then, in order to prevent the thermocouple 20 from extending from the upper end portion of the insulating rod-shaped body 18 and coming into contact with the inner wall of the protection tube 17 due to thermal expansion of the thermocouple wires 20a and 20b, the upper end of the insulating rod-shaped body 17 is prevented. Thermocouple 20 in the section
An accommodation hole 22 is formed to accommodate the thermal expansion movement.
【００１９】この収容穴部２２は、前記一対の素線挿通
孔２１，２１が内接する例えば長径ｄ4が１．７ｍｍ程
度、短径ｄ5が０．７ｍｍ程度の断面長円形に形成され
ると共に、熱電対素線２０ａ，２０ｂ及び絶縁棒状体１
８の長さ、熱膨張率並びに受ける熱を考慮して所定の深
さｈに形成されている。例えば、熱電対素線２０ａ，２
０ｂ及び絶縁棒状体１８の長さが１ｍ程度、熱膨張率が
１１．１×１０-6と８．０×１０-6、受ける温度が１０
００℃程度とした場合、熱電対素線２０ａ，２０ｂの方
が絶縁棒状体１８よりも３．１ｍｍ余計に伸びるので、
前記収容穴部２２の深さｈは余裕をとって６〜７ｍｍ程
度に形成されている。The accommodating hole 22 is formed into an elliptical cross section having a major axis d4 of about 1.7 mm and a minor axis d5 of about 0.7 mm in which the pair of wire insertion holes 21 and 21 are inscribed. Thermocouple wires 20a, 20b and insulating rod 1
8 has a predetermined depth h in consideration of the length, the coefficient of thermal expansion and the heat received. For example, thermocouple wires 20a, 2
0b and the length of the insulating rod-shaped body 18 are about 1 m, the coefficient of thermal expansion is 11.1 × 10−6 and 8.0 × 10−6 , and the receiving temperature is 10
When the temperature is set to about 00 ° C., the thermocouple wires 20a and 20b extend 3.1 mm more than the insulating rod-shaped body 18,
The accommodation hole 22 has a depth h of about 6 to 7 mm with a margin.
【００２０】そして、前記熱電対２０は収容穴部２２の
底部に配置され、この状態で熱電対素線２０ａ，２０ｂ
は絶縁棒状体１８の下端部から延出されており、且つ絶
縁棒状体１８の素線挿通孔２１，２１の下端部に例えば
絶縁棒状体１８と同質のセラミック接着材からなる充填
材を充填することにより固定されている（図示省略）。The thermocouple 20 is arranged at the bottom of the accommodation hole 22, and in this state, the thermocouple wires 20a, 20b.
Is extended from the lower end portion of the insulating rod-shaped body 18, and the lower end portions of the wire insertion holes 21 and 21 of the insulating rod-shaped body 18 are filled with, for example, a filler made of the same ceramic adhesive material as the insulating rod-shaped body 18. Therefore, it is fixed (not shown).
【００２１】なお、前記絶縁棒状体１８は素線挿通孔２
１が形成された状態で焼成されており、この絶縁棒状体
１８の上端部に収容穴部２２をフライスカッターなどの
加工機械により加工することになる。この場合、加工機
械の関係で現状では加工物である絶縁棒状体１８の長さ
が制限されるため、例えば長さが３０ｃｍ程度の絶縁棒
状体に収容穴部２２を加工してから、この絶縁棒状体を
例えば長さが７０ｃｍ程度の絶縁棒状体に接合すること
により所望長さの絶縁棒状体１８を得る。なお、この加
工方法を用いずに、例えば焼成前の絶縁棒状体１８に素
線挿通孔２１と共に収容穴部２２を形成してから焼成す
るようにしてもよく、この方法によれば収容穴部２２を
有する所望長さの絶縁棒状体１８が容易に得られる。The insulating rod-shaped body 18 has a wire insertion hole 2
1 is formed and fired, and the accommodating hole 22 is formed in the upper end of the insulating rod 18 by a machining machine such as a milling cutter. In this case, since the length of the insulating rod-shaped body 18, which is a workpiece, is currently limited due to the processing machine, for example, after the accommodation hole 22 is formed in the insulating rod-shaped body having a length of about 30 cm, The insulating rod 18 having a desired length is obtained by joining the rod to an insulating rod having a length of about 70 cm, for example. Instead of using this processing method, it is possible to form the housing hole 22 together with the wire insertion hole 21 in the insulating rod-shaped body 18 before firing, and then to fire. The desired length of the insulating rod 18 having 22 is easily obtained.
【００２２】次に、実施例の作用を述べる。先ず、図３
に示すように温度計１４を熱処理装置における蓋体１０
の挿入孔１５に挿入して昇降機構１３の昇降台１３ａに
ブラケット１６を介して取付けたなら、昇降機構１３に
よりウエハボート１１、保温筒１２及び温度計１４を反
応管３内に挿入すると共に蓋体１０を閉める。次いで、
温度センサ８を介して制御される加熱部５により反応管
３内を所定の温度例えば１０００℃程度に加熱し、この
時の反応管３内の温度を温度計１４の熱電対２０により
検知して測定する。そして、この温度計１４により測定
される温度に基づいて温度センサ８の較正を行ったり、
温度センサ８が正常に機能しているか否かの検査を行
う。Next, the operation of the embodiment will be described. First, FIG.
As shown in FIG.
When the wafer boat 11, the heat retaining cylinder 12, and the thermometer 14 are inserted into the reaction tube 3 by the elevating mechanism 13, the wafer boat 11, the heat retaining tube 12, and the thermometer 14 are inserted into the reaction tube 3 and the lid is attached. Close body 10. Then
The inside of the reaction tube 3 is heated to a predetermined temperature, for example, about 1000 ° C. by the heating unit 5 controlled via the temperature sensor 8, and the temperature inside the reaction tube 3 at this time is detected by the thermocouple 20 of the thermometer 14. taking measurement. Then, the temperature sensor 8 is calibrated based on the temperature measured by the thermometer 14,
It is inspected whether the temperature sensor 8 is functioning normally.
【００２３】このような検査状態において、温度計１４
が高温に加熱されているので、温度計１４を構成してい
る熱電対素線２０ａ，２０ｂや絶縁棒状体１８などが熱
膨張し、これら熱電対素線２０ａ，２０ｂ及び絶縁棒状
体１８の熱膨張差により熱電対２０が絶縁棒状体１８に
対して相対的に移動するようになる。In such an inspection state, the thermometer 14
Are heated to a high temperature, the thermocouple wires 20a, 20b and the insulating rod-shaped body 18 constituting the thermometer 14 thermally expand, and the thermocouple wires 20a, 20b and the insulating rod-shaped body 18 are heated. Due to the difference in expansion, the thermocouple 20 moves relative to the insulating rod 18.
【００２４】しかしながら、前記温度計１４において
は、絶縁棒状体１８の先端部に熱電対２０を長手方向に
熱膨張移動可能に収容する所定深さｈの収容穴部２２を
形成してあるため、熱電対２０が前記収容穴部２２内で
熱膨張移動するようになり、熱電対２０が保護管１７の
内壁と接触するようなことがない。従って、保護管１７
との接触による熱電対２０の断線を防止することが可能
となり、温度計１４の耐久性の向上が図れる。However, in the thermometer 14, since the insulating rod-like body 18 is formed with the accommodation hole 22 having a predetermined depth h for accommodating the thermocouple 20 in the longitudinal direction so that the thermocouple 20 can be thermally expanded and moved, The thermocouple 20 is allowed to thermally expand and move within the accommodation hole 22, and the thermocouple 20 does not come into contact with the inner wall of the protection tube 17. Therefore, the protection tube 17
It is possible to prevent disconnection of the thermocouple 20 due to contact with the thermocouple 20, and the durability of the thermometer 14 can be improved.
【００２５】なお、本発明は、前記実施例に限定される
ものではなく、本発明の要旨の範囲内で種々の変形実施
が可能である。例えば、実施例では縦型の処理炉１が例
示されているが、処理炉１としては横型のものであって
もよい。また、実施例では熱処理装置の反応管３内に温
度計１４を挿入するようにしたが、反応管３と均熱管６
との間に温度計１４を常設するようにしてもよい。更
に、本発明の温度計は熱処理装置以外にも適用可能であ
る。The present invention is not limited to the above embodiment, but various modifications can be made within the scope of the gist of the present invention. For example, although the vertical processing furnace 1 is illustrated in the embodiment, the processing furnace 1 may be a horizontal processing furnace. Further, in the embodiment, the thermometer 14 is inserted into the reaction tube 3 of the heat treatment apparatus, but the reaction tube 3 and the soaking tube 6 are included.
The thermometer 14 may be permanently installed between and. Further, the thermometer of the present invention can be applied to other than the heat treatment apparatus.
【００２６】また、実施例では細管の保護管１７内に収
容される絶縁棒状体１８の収容本数を多くするため、す
なわち収容効率を上げるために絶縁棒状体１８が断面楕
円形に形成されているが、絶縁棒状体１８の断面形状は
楕円形以外の例えば円形、方形、多角形等であってもよ
く、この絶縁棒状体１８の断面形状に対応して収容穴部
２２の断面形状も長円形以外の円形、方形、多角形等で
あってもよい。更に、収容穴部２２の上端部を例えば絶
縁棒状体１８と同質のセラミック接着材からなる充填材
で閉塞して収容穴部２２を密封するようにしてもよい。
これによれば、保護管１７から拡散等してくる重金属に
よる熱電対２０を構成する白金の合金化を防止すること
ができ、更に耐久性の向上が図れる。Further, in the embodiment, in order to increase the number of insulating rod-shaped bodies 18 accommodated in the protective tube 17 of the thin tube, that is, in order to improve the storage efficiency, the insulating rod-shaped bodies 18 are formed in an elliptical cross section. However, the cross-sectional shape of the insulating rod-shaped body 18 may be, for example, a circular shape, a rectangular shape, a polygonal shape, or the like other than the elliptical shape. It may be a circular shape, a square shape, a polygonal shape, etc. Further, the upper end portion of the accommodation hole portion 22 may be closed by, for example, a filler made of the same ceramic adhesive material as that of the insulating rod-shaped body 18 to seal the accommodation hole portion 22.
According to this, it is possible to prevent alloying of platinum forming the thermocouple 20 due to heavy metal that diffuses from the protective tube 17, and further improve durability.
【００２７】[0027]
【発明の効果】以上要するに本発明によれば、絶縁棒状
体の先端部に熱電対を長手方向に熱膨張移動可能に収容
する所定深さの収容穴部を形成したので、熱電対が前記
収容穴部内で熱膨張移動するようになり、熱電対が保護
管と接触することがなくなり、保護管との接触による熱
電対の断線を防止することができ、耐久性の向上が図れ
る。In summary, according to the present invention, since the accommodation hole having a predetermined depth for accommodating the thermocouple so as to be capable of thermal expansion and movement in the longitudinal direction is formed at the tip of the insulating rod, the thermocouple accommodates the accommodation. As a result of thermal expansion and movement within the hole, the thermocouple does not come into contact with the protective tube, disconnection of the thermocouple due to contact with the protective tube can be prevented, and durability can be improved.
【図１】本発明の一実施例を示す温度計の要部の一部切
欠拡大斜視図である。FIG. 1 is a partially cutaway enlarged perspective view of a main part of a thermometer showing an embodiment of the present invention.
【図２】図１の温度計の熱電対を取付けない状態の拡大
斜視図である。FIG. 2 is an enlarged perspective view of the thermometer of FIG. 1 without a thermocouple attached.
【図３】熱処理装置の縦断面図である。FIG. 3 is a vertical sectional view of a heat treatment apparatus.
【図４】温度計の拡大縦断面図である。FIG. 4 is an enlarged vertical sectional view of a thermometer.
【図５】図４のＡ−Ａ線拡大断面図である。5 is an enlarged cross-sectional view taken along the line AA of FIG.
【図６】従来の温度計の概略斜視図である。FIG. 6 is a schematic perspective view of a conventional thermometer.
１４ 温度計 １７ 保護管 １８ 絶縁棒状体 ２０ 熱電対 ２０ａ，２０ｂ 熱電対素線 ２１ 素線挿通孔 ２２ 収容穴部 14 Thermometer 17 Protective Tube 18 Insulating Rod 20 Thermocouple 20a, 20b Thermocouple Element 21 Element Wire Insertion Hole 22 Housing Hole
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川上 俊二 神奈川県津久井群城山町町屋１丁目２番41 号 東京エレクトロン東北株式会社相模事 業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shunji Kawakami 1-24-141 Machiya, Shiroyama Town, Tsukui Group, Kanagawa Prefecture, Tokyo Electron Tohoku Co., Ltd. Sagami Business Office
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1995994AJPH07209093A (en) | 1994-01-20 | 1994-01-20 | Thermometer |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1995994AJPH07209093A (en) | 1994-01-20 | 1994-01-20 | Thermometer |
| Publication Number | Publication Date |
|---|---|
| JPH07209093Atrue JPH07209093A (en) | 1995-08-11 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1995994APendingJPH07209093A (en) | 1994-01-20 | 1994-01-20 | Thermometer |
| Country | Link |
|---|---|
| JP (1) | JPH07209093A (en) |
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