【０００１】[0001]
【産業上の利用分野】本発明は、サファイア結晶基板上
にＧａ、Ａｌ、Ｉｎ等の窒化物薄膜結晶を形成した半導
体ウェハ及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer in which a nitride thin film crystal of Ga, Al, In or the like is formed on a sapphire crystal substrate and a method for manufacturing the semiconductor wafer.
【０００２】[0002]
【従来の技術】ＧａＮ及びその関連化合物によるＬＥ
Ｄ、ＬＤやＨＥＭＴなどの素子の実現が期待されてい
る。LE based on GaN and related compounds
It is expected that devices such as D, LD and HEMT will be realized.
【０００３】ＧａＮ、ＡｌＮ、ＩｎＮはサファイア単結
晶のＣ−面、即ち（０００１）面の鏡面に研磨された面
上にエピタキシャル成長されている。GaN, AlN and InN are epitaxially grown on the C-face of a sapphire single crystal, that is, on the mirror-polished face of the (0001) face.
【０００４】エピタキシャル成長は主に気相成長により
行なわれている。特に有機金属気相エピタキシー（ＭＯ
ＶＰＥ）法が多く用いられているが、化学気相エピタキ
シー（ＶＰＥ）法、分子線エピタキシー（ＭＢＥ）法
や、これらに光励起やプラズマを用いたものも用いられ
ている。Epitaxial growth is mainly carried out by vapor phase growth. In particular, metalorganic vapor phase epitaxy (MO
Although the VPE) method is often used, a chemical vapor phase epitaxy (VPE) method, a molecular beam epitaxy (MBE) method, or a method using photoexcitation or plasma for these methods is also used.
【０００５】ＭＯＶＰＥ法では、前述のサファイア単結
晶基板を水素もしくは窒素雰囲気中で１０００℃程度に
加熱し、トリメチルガリウム（ＴＭＧ）とアンモニア
（ＮＨ3）のガスを流すことにより、ＧａＮのエピタキ
シャル薄膜を成長している。In the MOVPE method, the sapphire single crystal substrate described above is heated to about 1000 ° C. in a hydrogen or nitrogen atmosphere, and a gas of trimethylgallium (TMG) and ammonia (NH3 ) is flowed to form an epitaxial thin film of GaN. Growing.
【０００６】ＡｌＮやＩｎＮの場合は、各々ＴＭＧの代
りにトリメチルアルミニウム（ＴＭＡ）やトリメチルイ
ンジウム（ＴＭＩ）を流して成長する。In the case of AlN or InN, trimethylaluminum (TMA) or trimethylindium (TMI) is made to flow instead of TMG for growth.
【０００７】従来、サファイア基板上に、ＡｌＮやＧａ
Ｎの１００〜１０００Ａ程度の薄膜を６００℃程度の低
温で成長する。これを１０００℃程度に加熱して熱処理
し、その後その温度でＧａＮを成長することにより、Ｇ
ａＮ層の品質が向上することが報告されており、キャリ
ア濃度が４×１０16〜２×１０17cm-3程度のｎ型のアン
ドープＧａＮエピタキシャル結晶が得られている（公知
例１、２）。Conventionally, AlN or Ga is formed on a sapphire substrate.
A thin film of N of about 100 to 1000 A is grown at a low temperature of about 600 ° C. This is heated to about 1000 ° C. and heat-treated, and then GaN is grown at that temperature to obtain G
It has been reported that the quality of the aN layer is improved, and an n-type undoped GaN epitaxial crystal having a carrier concentration of about 4 × 1016 to 2 × 1017 cm−3 has been obtained (known examples 1 and 2). .
【０００８】また、亜鉛（Ｚｎ）やマグネシウム（Ｍ
ｇ）を添加したＧａＮを電子線で照射処理することや
（公知例１、３）、不活性ガス中でアニールすることに
より（公知例４）１×１０17〜６×１０18cm-3のキャリ
ア濃度のｐ型ＧａＮエピタキシャル結晶が得られてい
る。Further, zinc (Zn) and magnesium (M
g) added GaN is irradiated with an electron beam (known examples 1 and 3) or annealed in an inert gas (known example 4) to obtain 1 × 1017 to 6 × 1018 cm−3 A p-type GaN epitaxial crystal having a carrier concentration has been obtained.
【０００９】公知例１：「高輝度青色発光のための電子
材料技術、田口編、Ｐ５１〜５８，１９９１年１２月発
行（サイエンスフォーラム社）」 公知例２：Ｓ．ＮＡＫＡＭＵＲＡ：Ｊ．Ｊ．Ａ．Ｐ．Ｖ
ＯＬ３０，Ｎｏ１０Ａ，１９９１，ｐｐＬ１７０５〜Ｌ
１７０７ 公知例３：Ｓ．ＮＡＫＡＭＵＲＡ：Ｊ．Ｊ．Ａ．Ｐ．Ｖ
ＯＬ３０，Ｎｏ１０Ａ，１９９１，ｐｐＬ１７０８〜Ｌ
１７１１ 公知例４：Ｓ．ＮＡＫＡＭＵＲＡ：Ｊ．Ｊ．Ａ．Ｐ．ｖ
ｏｌ３１，（１９９２）ｐｐ１２５８〜１１２６６ Ｐ
ａｒｔ１，Ｎｏ. ５ＡPublicly known example 1: "Electronic material technology for high-intensity blue light emission, edited by Taguchi, P51-58, December 1991 (Science Forum)" Publicly known example 2: S.I. NAKAMURA: J. J. A. P. V
OL30, No10A, 1991, ppL1705-L
1707 Known Example 3: S. NAKAMURA: J. J. A. P. V
OL30, No10A, 1991, ppL1708 to L
1711 Known Example 4: S. NAKAMURA: J. J. A. P. v
ol31, (1992) pp1258-11266 P
art1, No. 5A
【００１０】[0010]
【発明が解決しようとする課題】前述した従来方法で成
長したＧａＮ結晶は、低温成長バッファ層を介在させて
もまだ純度や結晶性が不十分である。The GaN crystal grown by the above-mentioned conventional method is still insufficient in purity and crystallinity even if a low temperature growth buffer layer is interposed.
【００１１】また、高濃度のｎ型ＧａＮ（ここで高濃度
とはキャリア濃度が１×１０18cm-3以上をいう）エピタ
キシャル結晶は、Ｓｉドープなどにより容易に得られて
いるのに対して、高濃度のｐ型ＧａＮエピタキシャル結
晶は電子線照射や成長後の熱処理によって一部実験的に
得られているものの、これらの後処理なしにいわゆるア
ズグロウン（as grown）の状態で容易に得られるまでに
は致っていない。On the other hand, high-concentration n-type GaN (here, high-concentration means a carrier concentration of 1 × 1018 cm−3 or more) epitaxial crystal is easily obtained by Si doping or the like. Although high-concentration p-type GaN epitaxial crystals have been experimentally obtained in part by electron beam irradiation and post-growth heat treatment, until they are easily obtained in the so-called as-grown state without these post-treatments. I have not caught up with.
【００１２】本発明者等は、従来は基板の成長面につい
ては全く未検討で、傾斜していない（０００１）面サフ
ァイア基板のみを用いて専らエピタキシャル成長法の改
良及び成長結晶の後処理により品質の改善を行なってい
た点に着目し、観点を変えて基板の成長面について鋭意
検討したところ、成長面を傾斜させると大幅な品質向上
がはかれるという知見を得た。The inventors of the present invention have not yet studied the growth surface of the substrate, and the quality of the substrate has been improved only by using the non-tilted (0001) plane sapphire substrate to improve the epitaxial growth method and post-process the grown crystal. Focusing on the point that the improvement was made, and from a different viewpoint, the inventors conducted a diligent examination of the growth surface of the substrate. As a result, they found that tilting the growth surface significantly improves the quality.
【００１３】したがって本発明の目的は、成長面を傾斜
することによって、上述した従来技術の問題点を解決
し、純度及び結晶性が大幅に向上し、かつ高濃度ｐ型ド
ーピングが可能となるＧａＮ及び関連化合物（ＡｌＮ、
ＩｎＮ及びこれらとＧａＮの混晶）の半導体ウェハ及び
その製造方法を提供することにある。Therefore, the object of the present invention is to solve the above-mentioned problems of the prior art by tilting the growth surface, to greatly improve the purity and crystallinity, and to enable high-concentration p-type doping. And related compounds (AlN,
It is to provide a semiconductor wafer of InN and a mixed crystal of these and GaN) and a method for manufacturing the same.
【００１４】[0014]
【課題を解決するための手段】本発明は、ＧａＮ等をエ
ピタキシャル成長させる基板としてサファイア単結晶基
板の（０００１）面を所定晶軸方向に傾けて鏡面研磨し
た、いわゆる微傾斜面の基板を用いている。この微傾斜
（０００１）面上にＧａＮ等をエピタキシャル成長させ
ることにより高品質な高濃度ｐ型ＧａＮ及び関連化合物
のエピタキシャル結晶を実現したものである。The present invention uses, as a substrate for epitaxially growing GaN or the like, a so-called slightly inclined surface substrate obtained by mirror-polishing a (0001) surface of a sapphire single crystal substrate with a predetermined crystal axis tilted. There is. By epitaxially growing GaN or the like on this slightly inclined (0001) plane, a high-quality epitaxial crystal of high-concentration p-type GaN and related compounds is realized.
【００１５】すなわち、本発明の半導体ウェハは、（０
００１）面を＜２１* １* ０＞方向もしくは＜０１１*
０＞方向に微傾斜した鏡面を有するサファイア結晶基板
の微傾斜（０００１）面上に、窒化ガリウム（Ｇａ
Ｎ）、窒化アルミニウム（ＡｌＮ）、窒化インジウム
（ＩｎＮ）、またはこれらの混晶のｐ型、ｎ型、または
ｉ型薄膜の単層もしくは多層の結晶が積層されているも
のである。That is, the semiconductor wafer of the present invention is (0
001) plane in <21 * 1 * 0> direction or <011 *
On the slightly inclined (0001) plane of the sapphire crystal substrate having a mirror surface slightly inclined in the 0> direction, gallium nitride (Ga
N), aluminum nitride (AlN), indium nitride (InN), or a mixed crystal of p-type, n-type, or i-type thin film in a single-layer or multi-layer structure.
【００１６】また本発明の半導体ウェハは、（０００
１）面を＜２１* １* ０＞方向もしくは＜０１１* ０＞
方向に微傾斜した鏡面を有するサファイア結晶基板の微
傾斜（０００１）面上に、ＧａＮバッファ層、ｐ型Ｇａ
Ｎ層、ｎ型ＧａＮ層が順次積層して、青色発光ダイオー
ド用ウェハとしたものである。The semiconductor wafer of the present invention is (000
1) Face in <21 * 1 * 0> direction or <011 * 0>
On the sapphire (0001) plane of the sapphire crystal substrate having a mirror surface slightly inclined in the direction, a GaN buffer layer and a p-type Ga
A N-type layer and an n-type GaN layer are sequentially laminated to form a blue light emitting diode wafer.
【００１７】また、本発明の半導体ウェハの製造方法
は、サファイア単結晶基板の（０００１）面を微傾斜し
たまま鏡面研磨し、その上にウェハの単層もしくは多層
構造のエピタキシャル層を成長するようにしたものであ
る。Further, in the method for manufacturing a semiconductor wafer of the present invention, the (0001) plane of the sapphire single crystal substrate is mirror-polished with a slight inclination, and a single layer or a multi-layered epitaxial layer of the wafer is grown thereon. It is the one.
【００１８】また、本発明の半導体ウェハの製造方法
は、サファイア結晶基板上にバッファ層を成長し、その
上にｐ型ＧａＮ層、ｎ型ＧａＮ層を成長してｐｎ構造の
ＧａＮエピタキシャル結晶を気相成長する工程を有する
半導体ウェハの製造方法において、サファイア結晶基板
に、（０００１）面を＜２１* １* ０＞方向もしくは＜
０１１* ０＞方向に微傾斜した面を鏡面とするサファイ
ア結晶基板を用いたものである。Further, according to the method of manufacturing a semiconductor wafer of the present invention, a buffer layer is grown on a sapphire crystal substrate, a p-type GaN layer and an n-type GaN layer are grown thereon, and a pn-structure GaN epitaxial crystal is grown. In a method of manufacturing a semiconductor wafer having a phase growth step, a (0001) plane is formed on a sapphire crystal substrate in a <21 * 1 * 0> direction or in a <21 * 1 * 0> direction.
This is a sapphire crystal substrate having a mirror surface of a surface slightly inclined in the 011 * 0> direction.
【００１９】これら半導体ウェハ、及び半導体ウェハの
製造方法において、微傾斜角度は２°〜１０°のいずれ
かであることが好ましい。In these semiconductor wafers and the semiconductor wafer manufacturing method, it is preferable that the slight inclination angle is 2 ° to 10 °.
【００２０】ものである。It is something.
【００２１】[0021]
【作用】従来の（０００１）面サファイア基板上に成長
したＧａＮエピタキシャル結晶には、窒素の抜けた空孔
や他の結晶欠陥が多く存在し、これがアンドープＧａＮ
の純度が良くない原因や、ｐ型ＧａＮが容易に得られな
い原因の一つとなっていると考えられる。In the conventional GaN epitaxial crystal grown on the (0001) plane sapphire substrate, there are many vacancies from which nitrogen is removed and other crystal defects, which are undoped GaN.
It is considered that this is one of the reasons why the purity is poor and that p-type GaN cannot be easily obtained.
【００２２】これらの結晶欠陥は結晶のエピタキシャル
成長中に発生すると考えられる。すなわち、ＧａＮ／サ
ファイア系結晶ではサファイア基板とＧａＮ結晶の格子
定数等の物性がかなり異なるいわゆるヘテロエピタキシ
ャル成長のため、図３に示すように、（０００１）面サ
ファイア単結晶基板１上の（０００１）面３に成長する
ＧａＮエピタキシャル結晶２は島状の三次元成長をしや
すく、これが前記の欠陥を発生しやすくしていると考え
られる。It is considered that these crystal defects occur during the epitaxial growth of crystals. That is, in the GaN / sapphire crystal, since the so-called heteroepitaxial growth in which the sapphire substrate and the GaN crystal have considerably different physical properties such as lattice constants, as shown in FIG. 3, the (0001) plane sapphire single crystal substrate 1 has a (0001) plane. It is considered that the GaN epitaxial crystal 2 that grows in No. 3 easily undergoes island-shaped three-dimensional growth, which easily causes the above defects.
【００２３】これに対して、ＧａＡｓ基板上のＧａＡｓ
エピタキシャル成長のような同種基板上に成長するホモ
エピタキシャルでは、エピタキシャル成長モードが二次
元成長となるため、結晶欠陥が非常に低減される。On the other hand, GaAs on the GaAs substrate
In homoepitaxial growth, such as epitaxial growth, on the same type of substrate, the epitaxial growth mode is two-dimensional growth, so crystal defects are greatly reduced.
【００２４】ところで、前述した低温成長ＡｌＮバッフ
ァや低温成長ＧａＮバッファはこの二次元成長を促進す
る効果があると考えられるがまだ不十分である。二次元
成長を実現するためには成長モードをステップフローモ
ードにすることが有効である。By the way, the above-mentioned low temperature grown AlN buffer and low temperature grown GaN buffer are considered to have the effect of promoting this two-dimensional growth, but they are still insufficient. In order to realize the two-dimensional growth, it is effective to set the growth mode to the step flow mode.
【００２５】この点で、図１に示すように、本発明の微
傾斜（０００１）面サファイア単結晶基板４を用いる
と、微傾斜（０００１）面５に多くのステップ６が存在
するため、このステップ端を基点としたＧａＮエピタキ
シャル結晶２のステップフローモード成長が容易に実現
する。At this point, as shown in FIG. 1, when the slightly inclined (0001) plane sapphire single crystal substrate 4 of the present invention is used, many steps 6 are present in the slightly inclined (0001) plane 5, so that Step flow mode growth of the GaN epitaxial crystal 2 based on the step edge is easily realized.
【００２６】したがって、二次元成長による良質なＧａ
Ｎ及び関連化合物結晶を得ることができる。また、高濃
度のｐ型ＧａＮエピタキシャル結晶を電子線照射や成長
後の熱処理などの後処理なしにアズグロウンの状態で容
易に得られる一方、ｎ型ＧａＮエピタキシャル結晶の濃
度もより高めることができる。Therefore, good quality Ga due to two-dimensional growth is obtained.
Crystals of N and related compounds can be obtained. Further, a high-concentration p-type GaN epitaxial crystal can be easily obtained in an as-grown state without post-treatment such as electron beam irradiation or heat treatment after growth, while the concentration of the n-type GaN epitaxial crystal can be further increased.
【００２７】[0027]
【実施例】以下、本発明の半導体ウェハを、サファイア
単結晶基板上の微傾斜面にＡｌ、Ｇａ等の窒化物薄膜結
晶を気相形成した実施例について説明する。EXAMPLES Examples of the semiconductor wafer of the present invention in which a nitride thin film crystal of Al, Ga or the like is vapor-phase formed on a sapphire single crystal substrate on a slightly inclined surface will be described below.
【００２８】＜実施例１＞ （０００１）面を＜２１* １* ０＞方向に２°傾けて鏡
面研磨したサファイア単結晶基板をＭＯＶＰＥ装置の反
応炉中のグラファイトサセプタ上にセットし、高純度水
素を十分流して炉内をパージした。<Example 1> A sapphire single crystal substrate mirror-polished with a (0001) plane tilted in the <21 * 1 * 0> direction by 2 ° was set on a graphite susceptor in a reaction furnace of a MOVPE apparatus to obtain high purity. The inside of the furnace was purged by sufficiently flowing hydrogen.
【００２９】次に、水素ガスを炉内に流しながらサセプ
タを加熱して基板を１０００℃以上に加熱し、１０分以
上保持した。その後、基板温度を６００℃にし、ＴＭＡ
とＮＨ3を炉内に流していわゆる低温成長のＡｌＮバッ
ファ層を５０ｎｍ成長した。Next, the substrate was heated to 1000 ° C. or higher by heating the susceptor while flowing hydrogen gas into the furnace, and held for 10 minutes or longer. After that, the substrate temperature is set to 600 ° C. and TMA
And NH3 were flown into the furnace to grow a so-called low temperature grown AlN buffer layer with a thickness of 50 nm.
【００３０】そして、ＴＭＡの炉内への供給を止め、水
素とＮＨ3を流したまま基板を１０３０℃に加熱し、そ
の後ＴＭＧを炉内に流してＧａＮを５μm 成長した。こ
のアンドープＧａＮエピタキシャル結晶の電気特性をホ
ール効果法により測定したところ、ｎ型でキャリア濃度
が５×１０15cm-3程度であり、従来に比べ大幅な純度向
上が認められた。Then, the supply of TMA to the furnace was stopped, the substrate was heated to 1030 ° C. with hydrogen and NH3 flowing, and then TMG was flown into the furnace to grow GaN to a thickness of 5 μm. When the electrical characteristics of this undoped GaN epitaxial crystal were measured by the Hall effect method, it was found to be n-type and the carrier concentration was about 5 × 1015 cm−3, showing a significant improvement in purity as compared with the conventional one.
【００３１】なお、成長時の水素、ＮＨ3、ＴＭＧ、Ｔ
ＭＡの流量は各々、１０ｌ／ｍｉｎ、５ｌ／ｍｉｎ、３
ｃｃ／ｍｉｎ、０．８ｃｃ／ｍｉｎである。During the growth, hydrogen, NH3 , TMG, T
MA flow rate is 10 l / min, 5 l / min, 3
cc / min and 0.8 cc / min.
【００３２】＜実施例２＞ （０００１）面を＜２１* １* ０＞方向へ５°及び１０
°傾けたサファイア基板を用いて実施例１と同様なエピ
タキシャル成長を評価を行なったところ、同様なキャリ
ア濃度のアンドープＧａＮ結晶が得られた。キャリア濃
度は傾斜角度が大きいほど小さくなる傾向が見られた。<Embodiment 2> The (0001) plane is oriented in the <21 * 1 * 0> direction by 5 ° and 10 °.
When the same epitaxial growth as in Example 1 was evaluated using a tilted sapphire substrate, an undoped GaN crystal with a similar carrier concentration was obtained. The carrier concentration tended to decrease as the tilt angle increased.
【００３３】＜実施例３＞ （０００１）面を＜０１１* ０＞方向へ２°、５°１０
°と傾けたサファイア基板を用いて実施例１と同様なエ
ピタキシャル成長を行なったところ実施例１、２と同様
な結果が得られた。<Embodiment 3> The (0001) plane is oriented in the <011 * 0> direction by 2 °, 5 ° 10
When the same epitaxial growth as in Example 1 was performed using a sapphire substrate tilted at an angle of 0, the same results as in Examples 1 and 2 were obtained.
【００３４】＜実施例４＞実施例１で用いたＡｌＮバッ
ファ層の代りにＧａＮバッファ層を６００℃で２０ｎｍ
成長し、その他の条件は実施例１と全く同じ条件でアン
ドープＧａＮ結晶を成長した。アンドープＧａＮエピタ
キシャル結晶のキャリア濃度はｎ型で１×１０15cm-3程
度であり、実施例１より高純度の結晶が得られた。Example 4 A GaN buffer layer was used instead of the AlN buffer layer used in Example 1 at 600 ° C. for 20 nm.
An undoped GaN crystal was grown under the same conditions as in Example 1 except for the growth. The carrier concentration of the undoped GaN epitaxial crystal was about 1 × 1015 cm−3 in n-type, and a crystal of higher purity than that of Example 1 was obtained.
【００３５】＜実施例５＞本実施例は、図２に示すＬＥ
Ｄ用ｐｎ接合ＧａＮエピタキシャル結晶ウェハの例であ
る。（０００１）面を＜２１* １* ０＞方向に２°傾け
た面を鏡面とする微傾斜（０００１）面サファイア単結
晶基板４を用いてｐｎ構造のＧａＮエピタキシャル結晶
７、８、９をＭＯＶＰＥ法により成長した。<Embodiment 5> This embodiment is an LE shown in FIG.
It is an example of a pn junction GaN epitaxial crystal wafer for D. MOVPE was performed on GaN epitaxial crystals 7, 8 and 9 having a pn structure by using a slightly inclined (0001) plane sapphire single crystal substrate 4 having a plane obtained by tilting the (0001) plane by 2 ° in the <21 * 1 * 0> direction. Grew up by law.
【００３６】実施例１と同様に基板４を１０５０℃で水
素ガスを流しながら加熱し、表面清浄化を行なった。次
に５００℃に基板温度を下げて水素とＴＭＧとＮＨ3を
流し低温度成長ＧａＮバッファ層７を２５ｎｍ成長し
た。次に水素とＮＨ3を流しながら基板温度を１０３０
℃に上げ水素とＴＭＧとＮＨ3とビスシクロペンタジエ
チルマグネシウム（ＣＰ2Ｍｇ）を流してｐ型ＧａＮ層
８を２μm 成長した。In the same manner as in Example 1, the substrate 4 was heated at 1050 ° C. while flowing hydrogen gas to clean the surface. Next, the substrate temperature was lowered to 500 ° C. and hydrogen, TMG and NH3 were flown to grow the low temperature growth GaN buffer layer 7 to 25 nm. Next, while flowing hydrogen and NH3 , the substrate temperature is adjusted to 1030
The temperature was raised to ℃ and hydrogen, TMG, NH3 and biscyclopentadiethyl magnesium (CP2 Mg) were flown to grow the p-type GaN layer 8 to 2 μm.
【００３７】引き続き水素とＴＭＧとＮＨ3とジシラン
（Ｓｉ2Ｈ6）を流し、ｎ型ＧａＮ層９を２μm 成長し
た。その後ＮＨ3と水素を流しながら結晶を冷却し６０
０℃〜８００℃になった時点で水素とＮＨ3を流すのを
停止し、代りに高純度Ｎ2ガスを流して室温まで冷却し
た。Subsequently, hydrogen, TMG, NH3 and disilane (Si2 H6 ) were flown to grow the n-type GaN layer 9 to a thickness of 2 μm. Then, cool the crystal while flowing NH3 and hydrogen 60
When the temperature reached 0 ° C. to 800 ° C., the flow of hydrogen and NH3 was stopped, and instead, high-purity N2 gas was flowed to cool to room temperature.
【００３８】ここで、水素、ＮＨ3、ＴＭＧ、ＣＰ2Ｍ
ｇ、Ｓｉ2Ｈ6、Ｎ2の各々の流量は、２０ｌ／ｍｉ
ｎ、５ｌ／ｍｉｎ、１ｃｃ／ｍｉｎ、２ｃｃ／ｍｉｎ、
１×１０-4ｃｃ／ｍｉｎ、２０ｌ／ｍｉｎである。Here, hydrogen, NH3 , TMG, CP2 M
The flow rate of g, Si2 H6 , and N2 is 20 l / mi.
n, 5 l / min, 1 cc / min, 2 cc / min,
1 × 10−4 cc / min and 20 l / min.
【００３９】成長した結晶のキャリア濃度はｎ型ＧａＮ
層９がジシランによるＳｉドープで５×１０19cm-3、ｐ
型ＧａＮ層８がアズグロウン状態で１×１０19cm-3であ
り、ともに１×１０18cm-3を超えるはるかに高い高キャ
リア濃度のｐ型ＧａＮ層、ｎ型ＧａＮ層が得られた。The carrier concentration of the grown crystal is n-type GaN.
Layer 9 is Si-doped with disilane, 5 × 1019 cm−3 , p
The type GaN layer 8 was 1 × 1019 cm−3 in the as-grown state, and both p-type GaN layer and n-type GaN layer having a much higher carrier concentration exceeding 1 × 1018 cm−3 were obtained.
【００４０】＜実施例６＞実施例５の成長、評価を、＜
２１* １* ０＞方向へ５°、１０°と各々傾けた基板や
＜０１１* ０＞方向へ２°、５°、１０°と傾けた基板
についても行なったところ、実施例５と同様な結果を得
た。<Example 6> The growth and evaluation of Example 5 are described below.
The same results as in Example 5 were obtained when the substrate was tilted 5 ° and 10 ° in the 21 * 1 * 0> direction and the substrate was tilted 2 °, 5 ° and 10 ° in the <011 * 0> direction. I got the result.
【００４１】＜他の実施例＞なお、微傾斜（０００１）
面サファイア単結晶基板上に成長できる結晶としては、
ＡｌＮやＧａＮの他にＩｎＮ及びこれらの混晶やこれら
を含む多層構造エピタキシャル結晶がある。<Other Embodiments> Incidentally, a slight inclination (0001)
As a crystal that can be grown on a plane sapphire single crystal substrate,
In addition to AlN and GaN, there are InN, a mixed crystal of these, and a multilayer structure epitaxial crystal containing these.
【００４２】また、エピタキシャル成長法は、ＭＯＶＰ
Ｅの他にＭＢＥやプラズマＣＶＤなど他の気相成長法を
用いることもできる。The epitaxial growth method uses MOVP.
Other than E, other vapor phase growth methods such as MBE and plasma CVD can be used.
【００４３】さらに、サファイア基板に代えてシリコン
カーバイド（ＳｉＣ）やシリコン基板などを用いたＧａ
Ｎ及び関連化合物のエピタキシャル成長においても本発
明の微傾斜面上成長は可能であり、エピタキシャル結晶
の品質を向上させることができる。Further, in place of the sapphire substrate, Ga using silicon carbide (SiC) or a silicon substrate is used.
Even in the epitaxial growth of N and related compounds, the growth on the slightly inclined surface of the present invention is possible, and the quality of the epitaxial crystal can be improved.
【００４４】[0044]
(1) 請求項１に記載の半導体ウェハによれば、結晶欠陥
の少ない高品質なＧａＮ及び関連化合物エピタキシャル
結晶を実現できる。(1) According to the semiconductor wafer of the first aspect, it is possible to realize a high-quality GaN and related compound epitaxial crystal with few crystal defects.
【００４５】(2) 請求項２に記載の半導体ウェハによれ
ば、より高輝度の青色発光ダイオードを作ることができ
る。(2) According to the semiconductor wafer of the second aspect, a blue light emitting diode with higher brightness can be manufactured.
【００４６】(3) 請求項３に記載の半導体ウェハの製造
方法によれば、サファイア基板上に結晶欠陥の少ない高
品質な半導体エピタキシャル層を形成できる。(3) According to the semiconductor wafer manufacturing method of the third aspect, a high-quality semiconductor epitaxial layer with few crystal defects can be formed on the sapphire substrate.
【００４７】(4) 請求項４に記載の半導体ウェハの製造
方法によれば、アズグロウンの状態で高濃度のｐ型Ｇａ
Ｎを容易に実現できる。(4) According to the method of manufacturing a semiconductor wafer of claim 4, p-type Ga having a high concentration in an as-grown state is obtained.
N can be easily realized.
【００４８】(5) 請求項５に記載の発明によれば、微傾
斜角を最適な値に規定したので、結晶欠陥のより少ない
高品質なＧａＮ及び関連化合物エピタキシャル結晶を実
現できる。(5) According to the invention described in claim 5, since the fine tilt angle is defined to be an optimum value, a high-quality GaN and related compound epitaxial crystal with fewer crystal defects can be realized.
【図１】本発明の半導体ウェハの実施例を説明するため
の微傾斜（０００１）面サファイア基板上のＧａＮエピ
タキシャル結晶の二次元成長モード（ステップフローモ
ード）を示す基板成長断面模式図。FIG. 1 is a schematic substrate growth cross-sectional view showing a two-dimensional growth mode (step flow mode) of a GaN epitaxial crystal on a slightly inclined (0001) plane sapphire substrate for explaining an embodiment of a semiconductor wafer of the present invention.
【図２】本発明の半導体ウェハの実施例を説明するため
のＬＥＤ用ｐｎ接合ＧａＮエピタキシャル結晶ウェハの
一例の断面図。FIG. 2 is a cross-sectional view of an example of a pn junction GaN epitaxial crystal wafer for LEDs for explaining an example of a semiconductor wafer of the present invention.
【図３】従来の（０００１）面サファイア基板上のＧａ
Ｎエピタキシャル結晶の三次元成長モードを示す基板成
長断面模式図。FIG. 3 shows Ga on a conventional (0001) plane sapphire substrate.
FIG. 3 is a schematic diagram of a substrate growth cross section showing a three-dimensional growth mode of an N epitaxial crystal.
２ ＧａＮエピタキシャル結晶 ４ 微傾斜（０００１）面サファイア単結晶基板 ５ 微傾斜（０００１）面 ６ ステップ ７ 低温成長ＧａＮバッファ層 ８ ｐ型ＧａＮ層 ９ ｎ型ＧａＮ層 2 GaN epitaxial crystal 4 Slightly (0001) plane Sapphire single crystal substrate 5 Slightly (0001) plane 6 Step 7 Low temperature growth GaN buffer layer 8 p-type GaN layer 9 n-type GaN layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 隈 彰二 茨城県土浦市木田余町3550番地 日立電線 株式会社アドバンスリサーチセンタ内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shoji Kuma 3550, Kidayomachi, Tsuchiura City, Ibaraki Prefecture Hitachi Cable Ltd. Advanced Research Center
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