【０００１】[0001]
【産業上の利用分野】本発明は一般式ＩｎXＡｌYＧａ
1-X-YＮ（０≦X＜１、０≦Y＜１）で表される窒化ガリ
ウム系化合物半導体を具備する窒化ガリウム系化合物半
導体発光素子に関する。The present invention relates to the general formula InX AlY Ga
The present invention relates to a gallium nitride-based compound semiconductor light emitting device including a gallium nitride-based compound semiconductor represented by1-XY N (0 ≦ X <1, 0 ≦ Y <1).
【０００２】[0002]
【従来の技術】最近ＧａＮ、ＧａＡｌＮ、ＩｎＧａＮ、
ＩｎＡｌＧａＮ等の窒化ガリウム系化合物半導体を用い
た発光素子が注目されている。その窒化ガリウム系化合
物半導体は一般にサファイア基板の上に成長される。サ
ファイアのような絶縁性基板を用いた発光素子は、他の
ＧａＡｓ、ＧａＡｌＰ等の半導体基板を用いた発光素子
と異なり、基板側から電極を取り出すことが不可能であ
るため、通常窒化ガリウム系化合物半導体層に設けられ
る正、負一対の電極は同一面側に形成される。特に、窒
化ガリウム系化合物半導体発光素子の場合、サファイア
が透光性であるため、電極面を下にして、サファイア基
板側を発光観測面とすることが多い（特開平４−１０６
７０号公報、特開平４−１０６７１号公報）。2. Description of the Related Art Recently, GaN, GaAlN, InGaN,
A light emitting device using a gallium nitride-based compound semiconductor such as InAlGaN has received attention. The gallium nitride-based compound semiconductor is generally grown on a sapphire substrate. A light emitting device using an insulating substrate such as sapphire is different from other light emitting devices using a semiconductor substrate such as GaAs or GaAlP in that it is impossible to take out electrodes from the substrate side, and therefore, a gallium nitride compound is usually used. A pair of positive and negative electrodes provided on the semiconductor layer are formed on the same surface side. In particular, in the case of a gallium nitride-based compound semiconductor light emitting device, since sapphire is translucent, the sapphire substrate side is often used as the emission observation surface with the electrode surface facing down (Japanese Patent Laid-Open No. 4-106).
70, JP-A-4-10671).
【０００３】一方、サファイア基板側を下にして、同一
面側に設けられたそれぞれの電極に上からワイヤーボン
ディングした構造の窒化ガリウム系化合物半導体発光素
子も知られている（特開昭６０−１７５４６８号公報、
特開昭６１−５６４７４号公報）。On the other hand, there is also known a gallium nitride-based compound semiconductor light-emitting device having a structure in which the sapphire substrate side is facing down and the electrodes provided on the same surface side are wire-bonded from above (Japanese Patent Laid-Open No. 60-175468). Bulletin,
JP-A-61-56474).
【０００４】[0004]
【発明が解決しようとする課題】サファイア基板側を発
光観測面とする構造の発光素子は、電極に発光を妨げら
れることなく、基板側全面から発光を観測することがで
きるという利点はあるが、両電極を接続するリードフレ
ーム間の間隔を狭くすることが困難であるため、チップ
サイズが約１ｍｍ以上と大きくなり、一枚あたりのウエ
ハーからとれるチップ数が少なくなるという欠点があ
る。A light-emitting element having a structure in which a sapphire substrate side is a light emission observation surface has an advantage that light emission can be observed from the entire substrate side without being blocked by electrodes. Since it is difficult to narrow the space between the lead frames connecting the both electrodes, there is a drawback that the chip size becomes large, about 1 mm or more, and the number of chips taken from one wafer becomes small.
【０００５】これに対し、サファイア基板側を下にする
構造の発光素子は、チップサイズを小さくできるという
利点はあるが、窒化ガリウム系化合物半導体層（特に最
上層のｐ型層）に形成された電極によって発光が遮ら
れ、発光効率が低下するという欠点がある。つまり、電
極に金線等をワイヤーボンディングする際、ボンディン
グ位置の電極面積は、金線の太さに合わせてある程度の
大きさを必要とするため、その位置が発光面の中心部に
あると、例えば中心部の電極、ワイヤーボンディングの
際にできるボール等で発光を遮ることになる。On the other hand, a light emitting device having a structure in which the sapphire substrate side faces down has the advantage that the chip size can be reduced, but is formed in a gallium nitride-based compound semiconductor layer (particularly the uppermost p-type layer). There is a drawback in that light emission is blocked by the electrodes and light emission efficiency is reduced. In other words, when wire-bonding a gold wire or the like to the electrode, the electrode area at the bonding position needs to have a certain size according to the thickness of the gold wire, so that the position is at the center of the light emitting surface, For example, light emission is blocked by the central electrode, a ball formed during wire bonding, or the like.
【０００６】従って本発明は前記両問題を解決するべく
成されたものであり、第一の目的は、窒化ガリウム系化
合物半導体発光素子のサイズを小さくすることにあり、
第２の目的は小さいサイズの発光素子から出る発光をで
きるだけ遮ることなく外部に取り出し発光効率を向上さ
せることにある。Therefore, the present invention has been made to solve the above problems, and a first object thereof is to reduce the size of a gallium nitride-based compound semiconductor light emitting device.
The second purpose is to take out the light emitted from the light emitting element of a small size to the outside and to improve the luminous efficiency.
【０００７】[0007]
【課題を解決するための手段】本発明の窒化ガリウム系
化合物半導体発光素子は同一面側にｎ型層の電極と、ｐ
型層の電極とが形成されてなる窒化ガリウム系化合物半
導体発光素子において、前記ｎ型層の電極はそのｎ型層
の隅部でワイヤーボンディングされており、さらに、前
記ｐ型層の電極はそのｐ型層の隅部でワイヤーボンディ
ングされていることを特徴とする。A gallium nitride-based compound semiconductor light emitting device of the present invention has an n-type layer electrode and a p-type electrode on the same surface side.
In the gallium nitride-based compound semiconductor light-emitting device in which the electrode of the n-type layer is formed, the electrode of the n-type layer is wire-bonded at the corner of the n-type layer, and the electrode of the p-type layer is It is characterized in that wire bonding is performed at the corner of the p-type layer.
【０００８】本発明の窒化ガリウム系化合物半導体発光
素子（以下発光素子という。）を図１および図２を用い
て説明する。図１は本発明の一実施例の発光素子を窒化
ガリウム系化合物半導体層側から見た平面図であり、図
２は図１の発光素子をこの図に示すように一点鎖線で切
断した際の概略断面図である。この発光素子はサファイ
ア基板１の上にｎ型層２とｐ型層３とを順に積層した構
造を有しており、ｐ型層３の一部をエッチングして、ｎ
型層２を露出させ、ｎ型層２の上に電極４と、ｐ型層３
の上に線状の電極５を形成している。さらにそのｐ型層
の上に形成した電極５は発光をできるだけ妨げないよう
に線状にすると共に、電流が均一に広がるようにｐ型層
３の上に複数設けている。A gallium nitride-based compound semiconductor light emitting device of the present invention (hereinafter referred to as a light emitting device) will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view of a light emitting device of one embodiment of the present invention viewed from the gallium nitride-based compound semiconductor layer side, and FIG. 2 is a view of the light emitting device of FIG. 1 taken along a chain line as shown in FIG. It is a schematic sectional drawing. This light emitting element has a structure in which an n-type layer 2 and a p-type layer 3 are sequentially stacked on a sapphire substrate 1. A part of the p-type layer 3 is etched to form an n-type layer.
The mold layer 2 is exposed, and the electrode 4 and the p-type layer 3 are formed on the n-type layer 2.
The linear electrode 5 is formed on the top surface. Further, the electrode 5 formed on the p-type layer is linear so as not to interfere with light emission as much as possible, and a plurality of electrodes 5 are provided on the p-type layer 3 so that the current spreads uniformly.
【０００９】以上のような発光素子の電極４、および電
極５に金線７をワイヤーボンディングしてリードフレー
ムと金線７とを接続することにより発光素子は完成す
る。なお、６はワイヤーボンディング時に金線７からで
きるボールである。本発明の発光素子は、図１に示すよ
うにｐ型層３の隅部をエッチングして、電極４をｎ型層
２の隅部に形成し、この電極４をワイヤーボンディング
している。さらに、電極５のワイヤーボンディング位置
をｐ型層３の隅部としている。これらの図に示すよう
に、電極４をｎ型層２の隅部としてワイヤーボンディン
グすることにより、ｐ型層３の面積を大きくすることが
でき、広範囲の面積で発光を得ることができる。さら
に、電極５のワイヤーボンディング位置をｐ型層３の隅
部とすることにより、発光をボール６で遮ること少なく
外部に取り出すことができる。The light emitting element is completed by wire-bonding the gold wire 7 to the electrodes 4 and 5 of the above light emitting element and connecting the lead frame and the gold wire 7. In addition, 6 is a ball formed from the gold wire 7 at the time of wire bonding. In the light emitting device of the present invention, as shown in FIG. 1, the corner of the p-type layer 3 is etched to form the electrode 4 at the corner of the n-type layer 2, and the electrode 4 is wire-bonded. Further, the wire bonding position of the electrode 5 is the corner of the p-type layer 3. As shown in these figures, the area of the p-type layer 3 can be increased by wire-bonding the electrodes 4 at the corners of the n-type layer 2, and light emission can be obtained over a wide area. Furthermore, by setting the wire bonding position of the electrode 5 to the corner of the p-type layer 3, it is possible to take out the light emission to the outside without blocking the light emission by the ball 6.
【００１０】ｐ型層３に形成された電極５をワイヤーボ
ンディングするには、他にｐ型層３の隅（例えば、図１
に示すａ点、ｂ点）でも良いが、図１に示すように、そ
れらが対角線上の端にあること、つまりｎ型層の電極４
をワイヤーボンディングする位置と、ｐ型層の電極５を
ワイヤーボンディングする位置とは、同一面側からみて
対角線上の端にあることが特に好ましい。なぜなら、ワ
イヤーボンディング位置を互いに対角線上の端とするこ
とにより、電流が電極５から電極４に均一に流れ、均一
な面発光が得られる。これは窒化ガリウム系化合物半導
体発光素子はサファイアという絶縁性基板の上に積層さ
れているため基板側から電極を取ることができない。従
って、同一窒化ガリウム系化合物半導体層側から正、負
両電極を取り出す場合、そのワイヤーボンディング位置
を電極４から最も離れた位置とすることにより、ｐ型層
３内に均一に電流を流すことができるため、均一な面発
光が得られることによる。このことは窒化ガリウム系化
合物半導体発光素子特有の効果である。In order to wire-bond the electrode 5 formed on the p-type layer 3, another corner of the p-type layer 3 (see, for example, FIG. 1) is used.
Points a and b) shown in Fig. 1 may be used, but as shown in Fig. 1, they must be at diagonal ends, that is, the electrode 4 of the n-type layer 4
It is particularly preferable that the position where wire bonding is carried out and the position where the electrode 5 of the p-type layer is wire bonded are located on diagonal ends when viewed from the same plane side. This is because the wire bonding positions are diagonally opposite to each other, so that the current uniformly flows from the electrode 5 to the electrode 4, and uniform surface emission can be obtained. This is because the gallium nitride-based compound semiconductor light emitting device is laminated on an insulating substrate called sapphire, and therefore the electrode cannot be taken from the substrate side. Therefore, when both the positive and negative electrodes are taken out from the same gallium nitride-based compound semiconductor layer side, the wire bonding position is located farthest from the electrode 4 so that a current can be evenly flowed in the p-type layer 3. This is because uniform surface emission can be obtained. This is an effect peculiar to the gallium nitride-based compound semiconductor light emitting device.
【００１１】また、図３は本発明の他の実施例に係る発
光素子を図１と同じく窒化ガリウム系化合物半導体層側
からみた平面図であり、図４は図３の平面図を一点鎖線
で示す位置で切断した際の概略断面図である。基本的な
構造は図１および図２と同一であるが、この発光素子は
ｐ型層３の電極５を金属よりなる透光性の電極としてい
る。電極５を金属とするのはｐ型層３とオーミック接触
を得るためである。さらに、電極５を透光性にするに
は、例えばＡｕ、Ｎｉ、Ｐｔ等の金属が透光性となるよ
うに非常に薄く蒸着、またはスパッタすることによって
実現できる。また、金属を蒸着、スパッタした後、アニ
ーリングして、金属を窒化ガリウム系化合物半導体中に
拡散させると共に、外部に飛散させて透光性となるよう
な膜厚まで調整することにより実現できる。透光性にな
る電極５の膜厚は金属の種類によっても異なるが、好ま
しい膜厚は０．００１μｍ〜０．１μｍの範囲である。FIG. 3 is a plan view of a light emitting device according to another embodiment of the present invention as seen from the gallium nitride based compound semiconductor layer side as in FIG. 1, and FIG. 4 is a plan view of FIG. It is a schematic sectional drawing when it cut | disconnects in the position shown. Although the basic structure is the same as that of FIGS. 1 and 2, this light emitting device uses the electrode 5 of the p-type layer 3 as a translucent electrode made of metal. The electrode 5 is made of metal in order to obtain ohmic contact with the p-type layer 3. Further, the electrode 5 can be made translucent by vapor-depositing or sputtering a metal such as Au, Ni, or Pt so thin that it becomes translucent. Further, it can be realized by vapor-depositing and sputtering a metal and then annealing it to diffuse the metal into the gallium nitride-based compound semiconductor and adjust the film thickness so that the metal is scattered to the outside and becomes translucent. The film thickness of the electrode 5 that becomes transparent varies depending on the type of metal, but a preferable film thickness is in the range of 0.001 μm to 0.1 μm.
【００１２】さらに、電極５を透光性とした場合、図３
に示すようにｐ型層３のほぼ全面に電極５を形成するこ
とができる。図３のように電極５を全面に形成すること
により、図１の線状の電極に比して、電流がよりｐ型層
３全面に広がるため、全面発光の好ましい発光素子を得
ることができる。Further, when the electrode 5 is made transparent, as shown in FIG.
The electrode 5 can be formed on almost the entire surface of the p-type layer 3 as shown in FIG. By forming the electrode 5 on the entire surface as shown in FIG. 3, compared with the linear electrode shown in FIG. 1, the current spreads more over the entire surface of the p-type layer 3, so that a light emitting element which is preferable for total light emission can be obtained. .
【００１３】さらにまた、電極５を透光性にした場合、
透光性電極の上に直接ワイヤーボンディングすると、電
極５の膜厚が薄いことにより、ボールが電極５と合金化
せずくっつきにくくなる傾向にあるため、図４に示すよ
うに電極５とは別にボンディング用の台座電極８を形成
する方が好ましい。台座電極８はＡｕ、Ｐｔ、Ａｌ等通
常の電極材料を使用でき、数μｍの厚さで形成すること
ができる。また、図１に示す線状の電極５を透光性とし
てもよく、線状の電極５を透光性にした場合には、電極
５の隅部に台座電極８を設けてもよいことはいうまでも
ない。Furthermore, when the electrode 5 is made transparent,
When wire bonding is directly performed on the translucent electrode, the balls tend not to be alloyed with the electrode 5 and stick to each other because the film thickness of the electrode 5 is small. Therefore, as shown in FIG. It is preferable to form the pedestal electrode 8 for bonding. The pedestal electrode 8 can be formed of a normal electrode material such as Au, Pt, Al, etc., and can be formed with a thickness of several μm. Further, the linear electrode 5 shown in FIG. 1 may be translucent, and when the linear electrode 5 is translucent, the pedestal electrode 8 may be provided at the corner of the electrode 5. Needless to say.
【００１４】本発明において、ｎ型層の電極をワイヤー
ボンドするｎ型層の隅部とは、いいかえると図１、図３
に示すように、同一平面上においてｎ型層の隅部に形成
されている電極を指し、同様にｐ型層の電極をワイヤー
ボンドするｐ型層の隅部とは、図１、図３に示すように
同一平面上に形成されているｐ型層の電極の隅部を指し
ている。In the present invention, the corners of the n-type layer for wire-bonding the electrodes of the n-type layer are, in other words, FIG. 1 and FIG.
As shown in FIG. 1, the electrode formed in the corner of the n-type layer on the same plane is referred to. The corner of the p-type layer for wire-bonding the electrode of the p-type layer is the same as in FIG. 1 and FIG. As shown, it indicates the corner of the electrode of the p-type layer formed on the same plane.
【００１５】[0015]
【作用】本発明の発光素子はｎ型層の電極がそのｎ型層
の隅部でワイヤーボンディングされており、さらに、ｐ
型層の電極がそのｐ型層の隅部でワイヤーボンディング
されているため、電極で発光を遮られることなく効率よ
く外部へ発光を取り出すことができる。また上部からワ
イヤーボンドするため、１チップを１リードフレーム上
に取り付けることができるため、チップサイズが小さく
でき生産性が向上する。さらに、ｎ型層の電極とｐ型層
の電極とを対角線上、つまり最も距離の離れた位置に配
置することにより、電流を均一に広げることができ、発
光効率がさらに向上する。またｐ型層の電極を透光性に
してｐ型層のほぼ全面に形成することにより、電流がｐ
型層全面に均一に流れ、しかも発光は透光性電極を通し
て電極側から観測することができる。In the light emitting device of the present invention, the electrodes of the n-type layer are wire-bonded at the corners of the n-type layer.
Since the electrode of the mold layer is wire-bonded at the corner of the p-type layer, it is possible to efficiently take out the emitted light to the outside without blocking the emitted light by the electrode. In addition, since wire bonding is performed from above, one chip can be mounted on one lead frame, so that the chip size can be reduced and productivity can be improved. Further, by arranging the n-type layer electrode and the p-type layer electrode on the diagonal line, that is, at the positions with the longest distance, the current can be uniformly spread, and the luminous efficiency is further improved. Also, by making the p-type layer electrode transparent and forming it on almost the entire surface of the p-type layer, the
It uniformly flows over the entire surface of the mold layer, and light emission can be observed from the electrode side through the transparent electrode.
【００１６】[0016]
【実施例】基板上にｎ型ＧａＮ層と、ｐ型ＧａＮ層とを
順に積層したウエハーを用意する。次に前記ｐ型ＧａＮ
層の上に所定の形状のマスクを形成した後、ｐ型ＧａＮ
層を一部エッチングしてｎ型ＧａＮ層を露出させる。た
だし、エッチング形状は図１に示すような形状とし、露
出したｎ型層の面積はその上に電極を形成してその電極
の上にワイヤーボンディングできる最小限の面積とす
る。EXAMPLE A wafer having an n-type GaN layer and a p-type GaN layer sequentially stacked on a substrate is prepared. Next, the p-type GaN
After forming a mask of a predetermined shape on the layer, p-type GaN
The layer is partially etched to expose the n-type GaN layer. However, the etching shape is as shown in FIG. 1, and the exposed area of the n-type layer is the minimum area where an electrode is formed thereon and wire bonding can be performed on the electrode.
【００１７】次にｐ型ＧａＮ層の上に電極形成用のマス
クを形成し、蒸着装置にてｐ型ＧａＮ層のほぼ全面にＮ
ｉ／Ａｕをおよそ３００オングストロームの厚さで蒸着
する。なお露出したｎ型ＧａＮ層の上にもＡｌを１μｍ
の厚さで蒸着する。この状態でｎ型層の電極とｐ型層の
電極とが対角線上に位置する電極パターンが完成する。Next, a mask for electrode formation is formed on the p-type GaN layer, and N is formed on almost the entire surface of the p-type GaN layer by a vapor deposition apparatus.
Deposit i / Au to a thickness of approximately 300 Angstroms. Al is also 1 μm on the exposed n-type GaN layer.
Vapor deposition with a thickness of. In this state, an electrode pattern in which the n-type layer electrode and the p-type layer electrode are located on a diagonal line is completed.
【００１８】蒸着後、アニーリング装置で、ウエハーを
アニーリングすることによりｐ型層上の電極を透光性に
する。さらに再度マスクを形成し、その透光性電極の所
定の位置にボンディング用のＡｌよりなる台座電極を１
μｍの厚さで形成する。この状態でｎ型層の電極のワイ
ヤーボンディング位置と、ｐ型層の電極のワイヤーボン
ディング位置とが対角線上にあるパターンが完成する。After vapor deposition, the electrode on the p-type layer is made transparent by annealing the wafer with an annealing device. Further, a mask is formed again, and a pedestal electrode made of Al for bonding is placed at a predetermined position of the transparent electrode.
It is formed with a thickness of μm. In this state, a pattern in which the wire bonding position of the n-type layer electrode and the wire bonding position of the p-type layer electrode are on a diagonal line is completed.
【００１９】次にウエハーを、前に形成したパターンが
発光素子の隅に来るように四角形にカットして発光チッ
プとする。後はこの発光チップのＧａＮ層側を発光観測
面として、一つのリードフレーム上に載置し、それぞれ
の電極に金線をワイヤーボンディングした後、最後にエ
ポキシ樹脂で全体をモールドすることにより、本発明の
発光ダイオードとした。図５にこの発光ダイオードの概
略断面図を示す。この図において１０はリードフレー
ム、１１がエポキシ樹脂である。そしてこの発光ダイオ
ードを発光させたところ、同一の素子でｐ型層の電極の
中心にワイヤーボンディングしたものに比して１．５倍
も明るかった。Next, the wafer is cut into a quadrangle so that the previously formed pattern is located at the corner of the light emitting element to form a light emitting chip. After that, the GaN layer side of this light emitting chip was used as the light emission observation surface, and it was placed on one lead frame, and gold wires were wire-bonded to each electrode, and finally the whole was molded with epoxy resin, The light emitting diode of the invention is used. FIG. 5 shows a schematic sectional view of this light emitting diode. In this figure, 10 is a lead frame and 11 is an epoxy resin. Then, when this light emitting diode was made to emit light, it was 1.5 times brighter than that of the same element wire-bonded to the center of the electrode of the p-type layer.
【００２０】[0020]
【発明の効果】以上説明したように、本発明の発光素子
はボンディング位置がその発光素子の隅部にあるため、
電極、ボンディング用の電極、ボール等で発光を遮るこ
とが少なくなり発光素子の発光効率を向上させることが
できる。また窒化ガリウム系化合物半導体層側から、両
電極を取り出してワイヤーボンディングできるため、チ
ップサイズを小さくできて生産性が向上する。さらに好
ましくは両電極を隅と隅との対角線上に配置することに
より、ｐ型層の電流を均一に広げることができ均一な発
光が得られる。As described above, since the light emitting device of the present invention has the bonding position at the corner of the light emitting device,
It is possible to improve the luminous efficiency of the light emitting element since the light emission is less blocked by the electrodes, the bonding electrodes, the balls and the like. Further, since both electrodes can be taken out from the gallium nitride compound semiconductor layer side and wire-bonded, the chip size can be reduced and the productivity is improved. More preferably, by disposing both electrodes on a diagonal line between corners, the current of the p-type layer can be uniformly spread and uniform light emission can be obtained.
【図１】 本発明の一実施例に係る発光素子を窒化ガリ
ウム系化合物半導体層側から見た平面図。FIG. 1 is a plan view of a light emitting device according to an embodiment of the present invention viewed from a gallium nitride compound semiconductor layer side.
【図２】 図１の発光素子の概略断面図。FIG. 2 is a schematic cross-sectional view of the light emitting device of FIG.
【図３】 本発明の他の実施例に係る発光素子を窒化ガ
リウム系化合物半導体層側から見た平面図。FIG. 3 is a plan view of a light emitting device according to another embodiment of the present invention viewed from the gallium nitride compound semiconductor layer side.
【図４】 図３の発光素子の概略断面図。FIG. 4 is a schematic cross-sectional view of the light emitting device of FIG.
【図５】 本発明の一実施例に係る発光素子の概略断面
図。FIG. 5 is a schematic cross-sectional view of a light emitting device according to an embodiment of the present invention.
１・・・・基板 ２・・・・ｎ型層 ３・・・・ｐ型層 ４・・・・ｎ型層の電極 ５・・・・ｐ型層の電極 ６・・・・ボール ７・・・・金線 ８・・・・台座電極 1 ... Substrate 2 ... N-type layer 3 ... P-type layer 4 ... N-type layer electrode 5 ... P-type layer electrode 6 ... Ball 7 ... ... Gold wire 8 ... Pedestal electrode
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