【０００１】[0001]
【産業上の利用分野】この発明は電子部品に関し、特に
たとえば基板上において半田付けされる端子電極を有す
る積層コンデンサやチップコイル等の電子部品に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to electronic parts, and more particularly to electronic parts such as multilayer capacitors and chip coils having terminal electrodes to be soldered on a substrate.
【０００２】[0002]
【従来の技術】この種の従来の電子部品としては、たと
えば図２に示すような積層コンデンサ１がある。積層コ
ンデンサ１は、セラミック層２と内部電極３とを交互に
積層して得られる本体４を含み、本体４の外表面には、
ＡｇまたはＡｇ−Ｐｄ系の電極ペーストを塗布・焼成し
て端子電極５が形成されている。2. Description of the Related Art As a conventional electronic component of this type, for example, there is a multilayer capacitor 1 as shown in FIG. The multilayer capacitor 1 includes a main body 4 obtained by alternately laminating ceramic layers 2 and internal electrodes 3, and the outer surface of the main body 4 has:
The terminal electrode 5 is formed by applying and firing an Ag or Ag-Pd-based electrode paste.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上述の従来技
術では、端子電極５の半田耐熱性が不十分である、
端子電極５のマイグレーションが大きい、貴金属（Ａ
ｇ）を用いているため高価であるという問題点があっ
た。そこで、図３に示すように、Ａｇ電極ペーストを塗
布・焼成して形成した端子電極５の外側に、Ｎｉの導電
層６とＳｎの導電層７を電解めっき（湿式めっき）によ
り形成し、それによって半田耐熱性を向上した積層コン
デンサ８が知られている。However, in the above-mentioned prior art, the solder heat resistance of the terminal electrode 5 is insufficient.
Noble metal (A
Since g) is used, there is a problem that it is expensive. Therefore, as shown in FIG. 3, a conductive layer 6 of Ni and a conductive layer 7 of Sn are formed by electrolytic plating (wet plating) on the outside of the terminal electrode 5 formed by applying and firing an Ag electrode paste, There is known a multilayer capacitor 8 having improved solder heat resistance.
【０００４】しかしながら、この従来技術によっても上
述の問題点をいずれも解決することはできず、また、導
電層６および７を電解めっき（湿式めっき）により形成
するため、たとえばセラミックのような本体４に電解液
が入り込んで劣化要因が形成されてしまうという別の問
題点が生じてしまい、コストおよび信頼性の面でなお問
題があった。However, none of the above-mentioned problems can be solved by this conventional technique, and since the conductive layers 6 and 7 are formed by electrolytic plating (wet plating), the main body 4 such as ceramic is used. There was another problem that the electrolytic solution entered into and the deterioration factor was formed, and there was still a problem in terms of cost and reliability.
【０００５】それゆえに、この発明の主たる目的は、よ
り安価でかつ信頼性の高い、電子部品を提供することで
ある。Therefore, a main object of the present invention is to provide a cheaper and more reliable electronic component.
【０００６】[0006]
【課題を解決するための手段】第１の発明は、端子電極
の少なくとも表面をＮｉ（５〜３０ｗｔ％）とＺｎ（１
０〜３５ｗｔ％）とＣｕ（５０〜８５ｗｔ％）とを含む
導電層で形成したことを特徴とする、電子部品である。
第２の発明は、端子電極の少なくとも表面をＮｉ（８〜
１０ｗｔ％）とＣｕ（８７〜９０ｗｔ％）とＳｎ（２〜
３ｗｔ％）とを含む導電層で形成したことを特徴とす
る、電子部品である。According to a first aspect of the present invention, at least the surface of a terminal electrode has Ni (5 to 30 wt%) and Zn (1
The electronic component is formed of a conductive layer containing 0 to 35 wt%) and Cu (50 to 85 wt%).
A second invention is that at least the surface of the terminal electrode is made of Ni (8 to
10 wt%), Cu (87-90 wt%), Sn (2-
3 wt%), and is formed of a conductive layer.
【０００７】[0007]
【作用】端子電極の少なくとも表面に形成された所定の
組成を有する導電層によって半田耐熱性および半田付性
等が確保され得る。The solder heat resistance and solderability can be secured by the conductive layer having a predetermined composition formed on at least the surface of the terminal electrode.
【０００８】[0008]
【発明の効果】この発明によれば、卑金属の表面層によ
って半田耐熱性および半田付性等を確保でき、全体とし
てより信頼性の高い電子部品を得ることができる。そし
て、端子電極をスパッタリング，蒸着，イオンプレーテ
ィング，溶射等の気相めっきによって形成するようにす
れば、本体がセラミックであっても、その劣化要因の形
成を防止でき、電子部品の信頼性をさらに向上できる。According to the present invention, the heat resistance and solderability of the solder can be secured by the surface layer of the base metal, and an electronic component having higher reliability as a whole can be obtained. If the terminal electrodes are formed by vapor-phase plating such as sputtering, vapor deposition, ion plating, and thermal spraying, even if the main body is ceramic, it is possible to prevent the formation of deterioration factors and improve the reliability of electronic components. It can be further improved.
【０００９】この発明の上述の目的，その他の目的，特
徴および利点は、図面を参照して行う以下の実施例の詳
細な説明から一層明らかとなろう。The above-mentioned objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
【００１０】[0010]
【実施例】図１に示すこの実施例の積層コンデンサ１０
は、複数の内部電極１２と複数のセラミック層１４とを
交互に積み重ねて得られる本体１６を含む。本体１６の
両端部には、それぞれが卑金属のみを成分とする第１導
電層１８および第２導電層２０ならびに第３導電層２２
を含む端子電極２４が形成される。EXAMPLE A multilayer capacitor 10 of this example shown in FIG.
Includes a body 16 obtained by alternately stacking a plurality of internal electrodes 12 and a plurality of ceramic layers 14. At both ends of the main body 16, the first conductive layer 18, the second conductive layer 20, and the third conductive layer 22 each containing only a base metal as a component.
The terminal electrode 24 including is formed.
【００１１】すなわち、第１導電層１８は、Ｔｉ，Ｍ
ｏ，ＣｒおよびＮｉの１つ以上をターゲットとして、Ａ
ｒ量１×１０-3Ｔｏｒｒ中のプレーナマグネトロンスパ
ッタリング（以下、単に「スパッタリング」という）に
より本体１６の両端面に付与される。第２導電層２０
は、ＮｉおよびＣｕの少なくとも１つをターゲットとし
て、スパッタリングにより第１導電層１８の外側からこ
れを被うようにして付与される。第３導電層２２は、Ｎ
ｉ，ＺｎおよびＣｕの合金をターゲットとして、スパッ
タリングにより第２導電層２０のさらに外側からこれを
被うようにして付与される。この第３導電層は、半田耐
熱性あるいは半田付性等に直接影響を与えるため、特に
その組成が重要であり、この実施例では、Ｎｉ：５ｗｔ
％，Ｚｎ：１０ｗｔ％，Ｃｕ：８５ｗｔ％に設定され
る。That is, the first conductive layer 18 is made of Ti, M
Targeting at least one of o, Cr and Ni, A
It is applied to both end faces of the main body 16 by planar magnetron sputtering (hereinafter simply referred to as “sputtering”) in an r amount of 1 × 10−3 Torr. Second conductive layer 20
Is applied by sputtering at least one of Ni and Cu so as to cover it from the outside of the first conductive layer 18. The third conductive layer 22 is N
Targeting an alloy of i, Zn and Cu, it is applied by sputtering so as to cover the second conductive layer 20 from the outer side. This third conductive layer directly affects solder heat resistance, solderability, etc., and therefore its composition is particularly important. In this embodiment, Ni: 5 wt
%, Zn: 10 wt%, Cu: 85 wt%.
【００１２】そして、発明者の実験によれば、肉厚１μ
ｍの第３導電層２２について、２７０℃・３０秒の半田
付条件の下で半田耐熱性および半田付性がともに良好で
あることが確認できた。また、第３導電層２２の各成分
の含有量を変更した場合、ＮｉおよびＺｎの含有量がそ
れぞれ３０ｗｔ％および３５ｗｔ％を超えたとき半田付
性が低下する。また、Ｃｕの含有量が１００ｗｔ％のと
きには耐熱試験後の半田付性が低下する。しかしなが
ら、Ｎｉ：５〜３０ｗｔ％，Ｚｎ：１０〜３５ｗｔ％，
Ｃｕ：５０〜８５ｗｔ％の範囲内であれば所定の半田耐
熱性および半田付性が得られることが確認できた。According to an experiment conducted by the inventor, the wall thickness is 1 μm.
It was confirmed that the third conductive layer 22 of m had good solder heat resistance and good solderability under the soldering condition of 270 ° C. for 30 seconds. Further, when the content of each component of the third conductive layer 22 is changed, the solderability deteriorates when the contents of Ni and Zn exceed 30 wt% and 35 wt%, respectively. Further, when the content of Cu is 100 wt%, the solderability after the heat resistance test is deteriorated. However, Ni: 5 to 30 wt%, Zn: 10 to 35 wt%,
It was confirmed that the predetermined solder heat resistance and solderability were obtained within the range of Cu: 50 to 85 wt%.
【００１３】さらに、図１の第３導電層２２として、Ｎ
ｉ：８〜１０ｗｔ％，Ｃｕ：８７〜９０ｗｔ％，Ｓｎ：
２〜３ｗｔ％からなる導電層を用いた場合にも同様に、
良好な半田耐熱性および半田付性が得られることが確認
できた。なお、上述の実施例における端子電極２４は、
導電層１８〜２２を含む３層構造に形成されたが、これ
に限らず第３導電層２２の１層のみでもよいし、２層あ
るいは４層以上の積層構造であってもよい。そして、表
面層を除く各層の成分や組成は貴金属または卑金属のい
ずれでもよくかつ形成方法も任意でよい。Further, as the third conductive layer 22 of FIG.
i: 8-10 wt%, Cu: 87-90 wt%, Sn:
Similarly, when a conductive layer composed of 2 to 3 wt% is used,
It was confirmed that good solder heat resistance and solderability were obtained. The terminal electrode 24 in the above-mentioned embodiment is
Although it is formed in a three-layer structure including the conductive layers 18 to 22, the present invention is not limited to this, and may be only one layer of the third conductive layer 22, or may be a laminated structure of two layers or four or more layers. The components and compositions of the layers other than the surface layer may be noble metals or base metals and may be formed by any method.
【００１４】また、各導電層１８〜２２を付与するため
のスパッタリングの条件は実施例のものに限られず、必
要に応じて適宜変更されてもよい。さらに、各導電層１
８〜２２は、スパッタリング以外に、蒸着やイオンプレ
ーティングあるいは溶射等の任意の気相めっきにより付
与されてもよい。そして、この発明は、積層コンデンサ
以外に、フィルムコンデンサ，チップコイル，チップＬ
Ｃフィルタやその他本体の外表面に端子電極が形成され
る任意の電子部品に適用可能である。Further, the sputtering conditions for applying the conductive layers 18 to 22 are not limited to those in the embodiment, and may be appropriately changed if necessary. Furthermore, each conductive layer 1
Other than sputtering, 8 to 22 may be applied by any vapor phase plating such as vapor deposition, ion plating or thermal spraying. In addition to the multilayer capacitor, the present invention also provides a film capacitor, a chip coil, and a chip L.
It can be applied to C filters and other arbitrary electronic parts having terminal electrodes formed on the outer surface of the main body.
【図１】この発明の一実施例を示す断面図解図である。FIG. 1 is a schematic sectional view showing an embodiment of the present invention.
【図２】従来技術を示す断面図解図である。FIG. 2 is a sectional view showing a conventional technique.
【図３】他の従来技術を示す断面図解図である。FIG. 3 is a schematic sectional view showing another conventional technique.
１０ …積層コンデンサ １６ …本体 １８ …第１導電層 ２０ …第２導電層 ２２ …第３導電層 ２４ …端子電極 10 ... Multilayer capacitor 16 ... Main body 18 ... First conductive layer 20 ... Second conductive layer 22 ... Third conductive layer 24 ... Terminal electrode
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3200209AJP2626329B2 (en) | 1991-08-09 | 1991-08-09 | Electronic components |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3200209AJP2626329B2 (en) | 1991-08-09 | 1991-08-09 | Electronic components |
| Publication Number | Publication Date |
|---|---|
| JPH0547585Atrue JPH0547585A (en) | 1993-02-26 |
| JP2626329B2 JP2626329B2 (en) | 1997-07-02 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3200209AExpired - LifetimeJP2626329B2 (en) | 1991-08-09 | 1991-08-09 | Electronic components |
| Country | Link |
|---|---|
| JP (1) | JP2626329B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06349664A (en)* | 1993-06-14 | 1994-12-22 | Murata Mfg Co Ltd | Electric component |
| JPH08330169A (en)* | 1995-06-05 | 1996-12-13 | Murata Mfg Co Ltd | Chip type coil and its manufacture |
| JP2015065331A (en)* | 2013-09-25 | 2015-04-09 | Tdk株式会社 | Ceramic electronic component |
| KR20180042126A (en)* | 2016-10-17 | 2018-04-25 | 다이요 유덴 가부시키가이샤 | Ceramic electronic component and method of manufacturing the same |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06349664A (en)* | 1993-06-14 | 1994-12-22 | Murata Mfg Co Ltd | Electric component |
| JPH08330169A (en)* | 1995-06-05 | 1996-12-13 | Murata Mfg Co Ltd | Chip type coil and its manufacture |
| JP2015065331A (en)* | 2013-09-25 | 2015-04-09 | Tdk株式会社 | Ceramic electronic component |
| KR20180042126A (en)* | 2016-10-17 | 2018-04-25 | 다이요 유덴 가부시키가이샤 | Ceramic electronic component and method of manufacturing the same |
| JP2018067569A (en)* | 2016-10-17 | 2018-04-26 | 太陽誘電株式会社 | Ceramic electronic component and method of manufacturing the same |
| Publication number | Publication date |
|---|---|
| JP2626329B2 (en) | 1997-07-02 |
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