【０００１】[0001]
【産業上の利用分野】本発明はプラズマ装置に関し、特
に小型化できるプラズマ装置に係わる。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma device, and more particularly to a plasma device which can be miniaturized.
【０００２】[0002]
【従来の技術】従来から、半導体ウェハ製造工程では、
反応ガスをプラズマ化してプラズマ処理を行なうプラズ
マ装置が用いられている。プラズマ処理は高温を要せず
低温処理できるため、ドーピング、酸化膜形成、エッチ
ング、洗浄等広く採用されている。2. Description of the Related Art Conventionally, in a semiconductor wafer manufacturing process,
2. Description of the Related Art A plasma device is used that converts a reaction gas into plasma and performs plasma processing. Since the plasma treatment does not require a high temperature and can be performed at a low temperature, it is widely adopted for doping, oxide film formation, etching, cleaning and the like.
【０００３】しかし、近年ますます半導体素子が微細化
されるに伴い、プラズマ処理においても微細化が要求さ
れ、真空処理室内の真空度をより高くした状態で、反応
ガスのプラズマ化をより効果的に行なうことが求められ
ている。このようなプラズマ装置１は、図５に示すよう
に、主にプラズマ生成用の放電ガスを噴射する導入孔３
にカソード電極２を取着したプラズマ発生室４と、プラ
ズマ発生室４で発生したプラズマから電子を引出し加速
させる加速室５と、加速室５で加速された電子により、
反応ガスをプラズマ化してウェハホルダー６に支持され
た半導体ウェハ７をプラズマ処理する反応室８とから構
成される。However, in recent years, as semiconductor elements have been further miniaturized, miniaturization is required also in plasma processing, and it is more effective to make reaction gas into plasma in a state where the degree of vacuum in the vacuum processing chamber is higher. Is required to do so. As shown in FIG. 5, such a plasma device 1 has an introduction hole 3 for mainly injecting a discharge gas for plasma generation.
The plasma generation chamber 4 having the cathode electrode 2 attached thereto, the acceleration chamber 5 for extracting and accelerating electrons from the plasma generated in the plasma generation chamber 4, and the electrons accelerated in the acceleration chamber 5
A reaction chamber 8 for plasma-converting the reaction gas to plasma-process the semiconductor wafer 7 supported by the wafer holder 6.
【０００４】更に詳述すると、プラズマ発生室４には同
軸状に中央に電子の導入孔を有する第１及び第２の中間
電極９及び１０と、アノード電極１１とが設けられ、カ
ソード電極２及びアノード電極１１間に放電電圧Ｖ１を
印加し放電することにより、放電領域１２であるプラズ
マ発生室４に導入される放電用ガスがプラズマ化される
ようになっている。プラズマ発生室４で発生されたプラ
ズマが導入される加速室５は電子加速電極１３が設けら
れ、加速電極１３に電子加速電圧Ｖ２を印加させること
によりプラズマから引出された電子を加速する加速領域
１４を構成するようになっている。そして、加速された
電子が導入される処理室８は反応ガスが導入される反応
ガス導入孔１５を備え、電子の照射により反応ガスをプ
ラズマ化し、半導体ウェハの処理を行なうプラズマ処理
領域１６を構成するものである。More specifically, the plasma generating chamber 4 is provided with first and second intermediate electrodes 9 and 10 coaxially having an electron introduction hole in the center thereof, and an anode electrode 11, and the cathode electrode 2 and By applying a discharge voltage V1 between the anode electrodes 11 to cause discharge, the discharge gas introduced into the plasma generation chamber 4, which is the discharge region 12, is turned into plasma. An electron acceleration electrode 13 is provided in the acceleration chamber 5 into which the plasma generated in the plasma generation chamber 4 is introduced, and an acceleration region 14 for accelerating electrons extracted from the plasma by applying an electron acceleration voltage V2 to the acceleration electrode 13. Is configured. The processing chamber 8 into which the accelerated electrons are introduced has a reaction gas introduction hole 15 into which the reaction gas is introduced, and forms a plasma processing region 16 in which the reaction gas is turned into plasma by the irradiation of the electrons and the semiconductor wafer is processed. To do.
【０００５】尚、反応室８、加速室５及びプラズマ発生
室４はそれぞれ排気孔１７、１８及び１９が設けられ、
反応ガス及び放電用ガスが導入される前に室内を真空に
する真空装置（図示せず）に接続される。また、第１及
び第２の中間電極９、１０、アノード電極１１、電子加
速電極１３の設置される部位の外側には、それぞれ磁場
形成のためのソレノイド２０、２１、２２、２３が巻装
される。The reaction chamber 8, the acceleration chamber 5 and the plasma generation chamber 4 are provided with exhaust holes 17, 18 and 19, respectively.
It is connected to a vacuum device (not shown) that evacuates the chamber before the reaction gas and the discharge gas are introduced. Solenoids 20, 21, 22 and 23 for forming a magnetic field are respectively wound around the portions where the first and second intermediate electrodes 9 and 10, the anode electrode 11 and the electron acceleration electrode 13 are installed. It
【０００６】この種のプラズマ装置には、放電ガスをプ
ラズマ化し、これより電子を加速してエッチングガスに
照射するもの（特開昭６４−５３４２２号公報）、反応
ガスをプラズマ化する領域に形成される磁場を打消すた
めに逆磁場コイルを配置するもの（特開平１−１０５５
４０号公報）、反応ガスをプラズマ化する領域に入って
くる電子を偏向、拡散させるため電場を配置するもの
（特開平１−１０５５３９号公報）等がある。In this type of plasma device, a discharge gas is made into plasma, and electrons are accelerated by this to irradiate the etching gas (Japanese Patent Laid-Open No. 64-53422). In which a reverse magnetic field coil is arranged to cancel the generated magnetic field (Japanese Patent Laid-Open No. 1055/1989)
No. 40), a device for arranging an electric field for deflecting and diffusing the electrons that enter the region where the reaction gas is made into plasma (Japanese Patent Laid-Open No. 105539).
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、このよ
うなプラズマ装置においては、加速室５のソレノイド２
２及び２３により形成される磁力線が電子の加速に最適
な空間を形成するためには、ソレノイド中心間は数１０
０ｍｍ程度であり、加速室５に設置可能な排気孔１８の
口径は電子移動方向に１００ｍｍ、その直交方向に２０
０ｍｍと小さく、加速室５の容積に対して真空装置の排
気効率も低下してしまう。しかし、隣接する反応室８は
高度に真空な、例えば１０-5〜１０-3Torrであり、同程
度の真空度が要求される加速室５内を所定の真空度、例
えば３×１０-4Torrに維持するために時間がかかってし
まうと同時に、最悪の場合はプラズマ発生室４にまで反
応室８で生成される腐食性の反応ガスが侵入してしまう
おそれがあった。However, in such a plasma apparatus, the solenoid 2 of the acceleration chamber 5 is used.
In order for the magnetic field lines formed by 2 and 23 to form an optimal space for accelerating electrons, the distance between the solenoid centers is several tens.
The diameter of the exhaust hole 18 which can be installed in the acceleration chamber 5 is 100 mm in the electron moving direction and 20 mm in the orthogonal direction.
It is as small as 0 mm, and the exhaust efficiency of the vacuum device also decreases with respect to the volume of the acceleration chamber 5. However, the adjacent reaction chambers 8 are highly vacuumed, for example, 10−5 to 10−3 Torr, and the inside of the acceleration chamber 5 that requires a similar vacuum degree has a predetermined vacuum degree, for example, 3 × 10−4. It takes a long time to maintain the pressure at Torr, and in the worst case, the corrosive reaction gas generated in the reaction chamber 8 may enter the plasma generation chamber 4.
【０００８】そのため、この腐食性の反応ガスの侵入に
対して、加速室５と、加速室５の排気孔１５に接続する
真空装置を耐腐食性部材で形成すると伴に、加速室５に
隣接されるプラズマ発生室４に腐食性の反応ガスが侵入
するのを防止するため加速室５を電子の移動方向に長く
形成し、加速室５に設けられる排気孔１８の口径を大口
径化して対処する方法も考えられる。しかし、加速室５
を電子移動方向に長く形成すると、装置自体が大きくな
ると共に、電子の移動距離も長くなるため、ソレノイド
２２及び２３により形成される磁力線が電子の加速に最
適な空間を形成するためには、アノード電極１１、加速
電極１３のソレノイド２２及び２３を極端に大径にしな
ければならず、装置の大型化は免れ得なかった。Therefore, in response to the intrusion of the corrosive reaction gas, the acceleration chamber 5 and the vacuum device connected to the exhaust hole 15 of the acceleration chamber 5 are formed of a corrosion-resistant member and are adjacent to the acceleration chamber 5. In order to prevent the corrosive reaction gas from entering the generated plasma generation chamber 4, the acceleration chamber 5 is formed to be long in the electron moving direction, and the diameter of the exhaust hole 18 provided in the acceleration chamber 5 is increased to cope with the problem. A method of doing it is also possible. However, acceleration room 5
If the magnetic field lines formed by the solenoids 22 and 23 form an optimal space for accelerating the electrons, the anode itself becomes large as the device itself becomes large and the moving distance of the electrons also becomes long if the magnetic field lines are made longer in the electron moving direction. The solenoids 22 and 23 of the electrode 11 and the accelerating electrode 13 had to be extremely large in diameter, which inevitably led to an increase in size of the device.
【０００９】本発明は上記事情に鑑みなされたもので、
効率よくプラズマ処理を行なえ、しかも装置を簡略化し
て、部品数を減少でき、小型化を図ったプラズマ装置を
提供することを目的とする。The present invention has been made in view of the above circumstances.
An object of the present invention is to provide a plasma device that can perform plasma processing efficiently, simplify the device, reduce the number of parts, and downsize.
【００１０】[0010]
【課題を解決するための手段】上記目的を達成するた
め、本発明のプラズマ装置は、カソード電極に囲まれた
空間を通って導入される放電用ガスをプラズマ化させる
プラズマ発生室と、前記プラズマから引出される電子の
照射により反応ガスをプラズマ化して被処理体の処理を
行なう反応室とを備え、前記プラズマ発生室と前記反応
室とを連結する連結部を設け、前記連結部と前記反応室
の間に設置され中央に前記電子の導入孔を有した電子加
速電極の前記導入孔周囲に、前記反応室と前記連結部を
結ぶ通路を備えたものである。To achieve the above object, a plasma device of the present invention comprises a plasma generating chamber for converting a discharge gas introduced into a space surrounded by a cathode electrode into a plasma, and the plasma. A reaction chamber for converting the reaction gas into plasma by irradiation of electrons extracted from the reaction chamber for treating the object to be processed, and providing a connection portion for connecting the plasma generation chamber and the reaction chamber, and the connection portion and the reaction A passage connecting the reaction chamber and the connecting portion is provided around the introduction hole of the electron accelerating electrode installed between the chambers and having the introduction hole of the electron in the center.
【００１１】[0011]
【作用】上記のように構成される本発明のプラズマ装置
によれば、カソード電極に囲まれた空間を通って導入さ
れる放電用ガスをプラズマ化するプラズマ発生室と、プ
ラズマ化された反応ガスで被処理体のプラズマ処理を行
なう反応室を連結部で接続する。連結部にはアノード電
極と電子加速電極が設置され、アノード電極と電子加速
電極にソレノイドを巻装させる。そのため連結部は電子
の移動方向に対して短く形成され、プラズマ発生室で発
生された放電用ガスのプラズマから電子を効率よく引出
し、加速して反応室に導入し、反応ガスをプラズマ化で
き、容積も小さいために、反応室に接続される真空装置
により充分排気される。また、反応室と連結部を区切る
ように設けられる電子加速電極の電子の導入孔の周囲に
通路が設けられ、反応室に存在する中性粒子が連結部に
逆流する通路を確保できるため、真空装置に接続されな
い連結部も反応室と同等の真空度を維持できると伴に、
電子が加速室から反応室に効率よく導入されるのを維持
する。従って、連結部に接続される真空装置は必要もな
く、排気孔も不要なため、従来必要であった加速室を排
除できる。このため、部品数も減少でき、装置自体も簡
略化され、小型化が図れる。According to the plasma apparatus of the present invention configured as described above, the plasma generation chamber for converting the discharge gas introduced through the space surrounded by the cathode electrode into the plasma, and the reaction gas converted into the plasma The reaction chamber for plasma processing of the object is connected by the connecting part. An anode electrode and an electron acceleration electrode are installed at the connecting portion, and a solenoid is wound around the anode electrode and the electron acceleration electrode. Therefore, the connecting portion is formed short with respect to the moving direction of the electrons, and the electrons can be efficiently extracted from the plasma of the discharge gas generated in the plasma generation chamber, accelerated and introduced into the reaction chamber, and the reaction gas can be turned into plasma. Since the volume is also small, it is sufficiently evacuated by the vacuum device connected to the reaction chamber. Further, a passage is provided around the electron introduction hole of the electron accelerating electrode that is provided so as to separate the reaction chamber and the connecting portion, and it is possible to secure a passage in which neutral particles existing in the reaction chamber flow back to the connecting portion. The connection part that is not connected to the device can maintain the same degree of vacuum as the reaction chamber,
Maintaining the efficient introduction of electrons from the acceleration chamber into the reaction chamber. Therefore, a vacuum device connected to the connecting portion is not required, and an exhaust hole is not required, so that the acceleration chamber, which is conventionally required, can be eliminated. Therefore, the number of parts can be reduced, the device itself can be simplified, and the size can be reduced.
【００１２】[0012]
【実施例】本発明のプラズマ装置をプラズマエッチング
装置に適用した一実施例を図面を参照して説明する。図
１に示すプラズマエッチング装置Ｓは、主として、放電
ガスＧ１をプラズマ化させるプラズマ発生室２４と、プ
ラズマ発生室２４で発生された放電用ガスのプラズマか
ら引出し加速した電子を反応室２６に導入する連結部２
５と、連結部２５から導入される電子により反応ガスＧ
２をプラズマ化させて被処理体である半導体ウェハ７を
エッチングする反応室２６から成る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which the plasma device of the present invention is applied to a plasma etching device will be described with reference to the drawings. The plasma etching apparatus S shown in FIG. 1 mainly introduces into the reaction chamber 26 a plasma generating chamber 24 for converting the discharge gas G1 into plasma, and electrons accelerated by being drawn out from the plasma of the discharge gas generated in the plasma generating chamber 24. Connection part 2
5 and the reaction gas G due to the electrons introduced from the connecting portion 25.
It is composed of a reaction chamber 26 in which the semiconductor wafer 7 to be processed is etched by converting 2 into plasma.
【００１３】更に詳述すると、プラズマ発生室２４は例
えばステンレス鋼等で円筒状に形成された密封容器であ
り、一方の端部の中央にアルゴン等の放電用ガスＧ１が
導入される導入孔２７を有し、導入孔２７と同一に構成
されるカソード電極２８が設けられる。更に、カソード
電極２８と同軸状に中央に電子の導入孔を有する第１及
び第２の中間電極２９及び３０が配置される。第１の中
間電極２９はその電子の導入孔の径の大きさを選択でき
るようになっており、最初の放電用ガスのプラズマ化が
効率よく行なえるようにカソード電極２８間の真空度を
調整されるようになっている。第１及び第２の中間電極
２９及び３０の外周の密閉容器の外側にそれぞれ磁場形
成のためのソレノイド３１及び３２が巻装される。この
ような電極はそれぞれ、第１の中間電極２９は直径３ｍ
ｍ、長さ１５ｍｍ、第２の中間電極３０は直径１５ｍ
ｍ、長さ６０ｍｍに設定され、第２の中間電極３０のソ
レノイド３２により形成される磁場は３９５ガウスであ
る。更に、プラズマ発生室２４には図示しない真空装置
に開閉弁３３を介して接続された排気孔３４が設けられ
る。また、カソード電極２８が取着される端部の対向面
に連結孔３５が同軸状に設けられ、Ｏリング３６により
気密に連結部２５が連結される。More specifically, the plasma generating chamber 24 is a sealed container formed of, for example, stainless steel in a cylindrical shape, and has an introduction hole 27 into which a discharge gas G1 such as argon is introduced at the center of one end. And a cathode electrode 28 having the same structure as the introduction hole 27 is provided. Further, first and second intermediate electrodes 29 and 30 having an electron introduction hole in the center are arranged coaxially with the cathode electrode 28. The diameter of the electron introduction hole of the first intermediate electrode 29 can be selected, and the degree of vacuum between the cathode electrodes 28 is adjusted so that the first discharge gas can be efficiently turned into plasma. It is supposed to be done. Solenoids 31 and 32 for forming a magnetic field are wound around the outer circumference of the closed container around the outer circumferences of the first and second intermediate electrodes 29 and 30, respectively. In each of such electrodes, the first intermediate electrode 29 has a diameter of 3 m.
m, length 15 mm, diameter of the second intermediate electrode 30 is 15 m
The magnetic field formed by the solenoid 32 of the second intermediate electrode 30 is set to m and the length is 60 mm, and the magnetic field is 395 gauss. Further, the plasma generation chamber 24 is provided with an exhaust hole 34 connected to a vacuum device (not shown) through an opening / closing valve 33. Further, a connecting hole 35 is coaxially provided on the opposing surface of the end portion to which the cathode electrode 28 is attached, and the connecting portion 25 is airtightly connected by the O-ring 36.
【００１４】プラズマ発生室２４の連結孔３５に連結さ
れる連結部２５は、例えばステンレス鋼等で円筒状に形
成され、プラズマ発生室２４と、反応室２６とを連結す
る密閉空間を形成するものであり、プラズマ発生室２４
と同様に反応室２６の連結孔３７とＯリング３８により
気密に接続される。連結部２５には、中央に電子の導入
孔を有し、プラズマ発生装置２４のカソード電極２８と
の間に印加されて放電領域３９を形成するアノード電極
４０を備える。更に、アノード電極４０と同軸状に設置
され、中央に電子の導入孔４２ｂを有し、アノード電極
４０との間にＶ２電圧が印加されて電子を加速する加速
領域４１を形成する電子加速電極４２が設けられる。電
子加速電極４２は連結部２５と反応室２６を区切るよう
に連結部２５と反応室２６との間に設けられる。これら
のアノード電極４０と電子加速電極４２の外周の連結部
２５の外側には、１のソレノイド４３が巻装される。ア
ノード電極４０の孔の直径は８ｍｍ、長さ２０ｍｍ、電
子加速電極４２の孔の直径は１０ｍｍ、長さ２０ｍｍに
設定され、ソレノイド４３の外径は２４５ｍｍであり、
４００ガウスの磁場が形成される。The connecting portion 25 connected to the connecting hole 35 of the plasma generating chamber 24 is formed of, for example, stainless steel in a cylindrical shape and forms a closed space for connecting the plasma generating chamber 24 and the reaction chamber 26. And the plasma generation chamber 24
Similarly to the above, the connection hole 37 of the reaction chamber 26 and the O-ring 38 are connected airtightly. The connecting portion 25 is provided with an anode electrode 40 having an electron introduction hole in the center thereof and applied between the cathode electrode 28 of the plasma generator 24 and the discharge electrode 39 to form a discharge region 39. Further, the electron accelerating electrode 42 is installed coaxially with the anode electrode 40, has an electron introducing hole 42b in the center thereof, and forms an accelerating region 41 for accelerating the electrons by applying a V2 voltage between the same and the anode electrode 40. Is provided. The electron accelerating electrode 42 is provided between the connecting portion 25 and the reaction chamber 26 so as to partition the connecting portion 25 and the reaction chamber 26. A single solenoid 43 is wound around the outer periphery of the connecting portion 25 on the outer circumference of the anode electrode 40 and the electron acceleration electrode 42. The diameter of the hole of the anode electrode 40 is set to 8 mm and the length is 20 mm, the diameter of the hole of the electron acceleration electrode 42 is set to 10 mm and the length is 20 mm, and the outer diameter of the solenoid 43 is 245 mm.
A magnetic field of 400 Gauss is created.
【００１５】また、連結部２５の長さは、図２に示す電
子透過率と電子透過距離の関係からもわかるように、ア
ノード電極４０と電子加速電極４２間に放電が生じない
範囲で短い方が好ましい。連結部２５の長さとしては５
０ｍｍである。更に、連結部２５に同軸状に接続される
反応室２６は、例えばステンレス鋼等で円筒状に形成さ
れ、気密に保持されるようになっている。そして、半導
体ウェハ７を連結部２５と同軸状に支持する支持体４４
と、支持体４４上の半導体ウェハ７を処理するための例
えば塩素や、アルゴン等の反応ガスＧ２の導入孔４５と
が備えられる。連結部２５の電子加速電極４２と支持体
４４との間は、反応ガスＧ２が連結部２５から導入され
る加速電子によりプラズマ化されるプラズマ領域４６を
構成する。また、反応室２６内を真空にする真空装置
に、開閉弁４７を介して接続される排気孔４８が備えら
れる。Further, as can be seen from the relationship between the electron transmittance and the electron transmission distance shown in FIG. 2, the length of the connecting portion 25 is as short as possible within the range in which no discharge occurs between the anode electrode 40 and the electron acceleration electrode 42. Is preferred. The length of the connecting portion 25 is 5
It is 0 mm. Further, the reaction chamber 26 coaxially connected to the connecting portion 25 is formed of, for example, stainless steel in a cylindrical shape and is hermetically held. Then, a support body 44 that supports the semiconductor wafer 7 coaxially with the connecting portion 25.
And a hole 45 for introducing a reaction gas G2 such as chlorine or argon for processing the semiconductor wafer 7 on the support 44. A plasma region 46 is formed between the electron accelerating electrode 42 of the connection part 25 and the support 44 so that the reaction gas G2 is turned into plasma by the accelerated electrons introduced from the connection part 25. Further, a vacuum device for evacuating the reaction chamber 26 is provided with an exhaust hole 48 connected through an opening / closing valve 47.
【００１６】このようなプラズマ装置Ｓの連結部２５の
電子加速電極４２及びアノード電極４０は、図３に示す
ようにそれぞれ支持体４９に支持されている。そして電
子加速電極４２の支持体４９には連結部２５と反応室２
６とを結ぶ通路５０が穿設される。通路５０は反応室２
６に存在する中性粒子が通抜けでき、電子の流れと逆方
向に移動する中性粒子が、電子の流れを妨げることなく
逆方向に移動することを助けるために備えられ、中性粒
子が自由に連結部２５に侵入できるような径、例えば
３．５ｍｍを有し、数も８等適宜選択される。The electron accelerating electrode 42 and the anode electrode 40 of the connecting portion 25 of the plasma apparatus S are supported by the support 49 as shown in FIG. The support 49 of the electron accelerating electrode 42 is connected to the connecting portion 25 and the reaction chamber 2.
A passage 50 connecting with 6 is drilled. Passage 50 is reaction chamber 2
Neutral particles existing in 6 can pass through, and neutral particles that move in the opposite direction to the electron flow are provided to help move in the opposite direction without obstructing the electron flow. It has a diameter such that it can freely enter the connecting portion 25, for example, 3.5 mm, and the number is appropriately selected such as 8.
【００１７】ここで、反応室２６で連結部２５からの電
子が導入されてエッチング処理される際に、 Ｐ4〜Ｐ3＜Ｐ2 （ここでＰ2＝プラズマ発生室の圧、Ｐ3＝連結部の圧、
Ｐ4＝反応室２６の圧を示す。）が維持されることが、
電子の輸送が効率よく行なわれる。そのため、連結部２
５の電子加速電極４２の支持体４９に通路５０を設け、
アノード電極４０の支持体４９に通路を設けることによ
り、連結部２５と、反応室２６の真空度は同等に維持さ
れると共に、真空装置により反応室２６からの排気が行
なわれ、プラズマ反応により生じた活性ガスは連結部２
５に多量に移動することはない。また、連結部２５とプ
ラズマ発生室２４とはアノード電極４０により、Ｐ3＜
Ｐ2が維持される。Here, when electrons from the connecting portion 25 are introduced into the reaction chamber 26 for etching, P4 to P3 <P2 (where P2 = pressure of plasma generating chamber, P3 = Connection pressure,
P4 = indicates the pressure in the reaction chamber 26. ) Is maintained,
Electrons are efficiently transported. Therefore, the connecting portion 2
5, the passage 50 is provided in the support 49 of the electron acceleration electrode 42 of
By providing a passage in the support 49 of the anode electrode 40, the degree of vacuum in the connecting portion 25 and the reaction chamber 26 is maintained at the same level, and the reaction chamber 26 is evacuated by the vacuum device to generate plasma reaction. Active gas is connected 2
It does not move to 5 in large quantities. Further, the connecting portion 25 and the plasma generating chamber 24 are connected to each other by the anode electrode 40 so that P3 <
P2 is maintained.
【００１８】ここで、通路５０は電子加速電極４２の支
持体４９に設けず、図４に示すように電子加速電極４２
ａを直接穿設して中央の電子の導入孔４２ｃの周囲に、
適宜中性粒子の通過する通路５１を設けるようにしても
よい。上記のような構成のプラズマ装置Ｓを用いてエッ
チングを行うには、放電用ガス導入孔２７と同一に構成
されたカソード電極２８を通過させて放電用ガスＧ１を
プラズマ発生室２４内に導入する。カソード電極２８
と、第１の中間電極２９間の圧力が例えば１．０Torr程
度となるように排気を行なった状態で、カソード電極２
８と、第１及び、第２の中間電極２９及び３０、アノー
ド電極４０との間に放電電圧Ｖ１を印加して放電を生起
させると、放電領域３９内にプラズマが発生する。この
時、第１の中間電極２９の電子の導入孔の径を細め、カ
ソード電極２８と、第１の中間電極２９間の圧力を０．
６Torr程度となるように真空度を調整して、効率よくプ
ラズマ放電が発生するようにする。最初にカソード電極
２８と、第１の中間電極２９間で放電が生じ、その後第
２の中間電極３０、アノード電極４０と移行していく。
カソード電極２８とアノード電極４０間で放電が安定し
てなされるようになった時点で第１及び第２の中間電極
２９及び３０は作動を中止させてよいため、それぞれの
スイッチＳ１及びＳ２をＯＦＦとする。Here, the passage 50 is not provided in the support 49 of the electron acceleration electrode 42, but as shown in FIG.
a is directly formed around the central electron introducing hole 42c,
A passage 51 through which neutral particles pass may be provided as appropriate. In order to perform the etching using the plasma apparatus S having the above-described structure, the discharge gas G1 is introduced into the plasma generation chamber 24 through the cathode electrode 28 having the same structure as the discharge gas introduction hole 27. .. Cathode electrode 28
Then, the cathode electrode 2 is evacuated so that the pressure between the first intermediate electrodes 29 becomes, for example, about 1.0 Torr.
8 and the first and second intermediate electrodes 29 and 30, and the anode electrode 40, a discharge voltage V1 is applied to generate discharge, and plasma is generated in the discharge region 39. At this time, the diameter of the electron introduction hole of the first intermediate electrode 29 is reduced, and the pressure between the cathode electrode 28 and the first intermediate electrode 29 is reduced to 0.
The degree of vacuum is adjusted to be about 6 Torr so that plasma discharge is efficiently generated. First, discharge is generated between the cathode electrode 28 and the first intermediate electrode 29, and then the second intermediate electrode 30 and the anode electrode 40 are transferred.
Since the first and second intermediate electrodes 29 and 30 may be stopped at the time when the discharge is stably generated between the cathode electrode 28 and the anode electrode 40, the respective switches S1 and S2 are turned off. And
【００１９】このようにしてプラズマ発生室２４に安定
して発生されるプラズマにより引出される電子は連結部
２５の電子加速電極４２とアノード電極４０間に加速電
圧Ｖ２を印加することにより加速領域４１で加速され
る。連結部２５の電子移動方向の長さが短いため、ソレ
ノイド４３の径が大きくなくても電子は効率よく加速さ
れ反応室２６に導入される。この際、反応室２６に接続
された真空装置により開かれた開閉弁４７により排気孔
４８から排気させ、反応室２６及び連結部２５を所望の
真空度例えば１０-6〜１０-7Torrに設定しておく。連結
部２５は容積が小さいため、反応室２６に接続された真
空装置により充分排気がなされる。その後、反応室２６
に反応ガスＧ２を導入し、連結部２５から加速された電
子が移動して反応ガスを照射しプラズマ領域４６にプラ
ズマを発生させる。この時の真空圧は１０-3〜１０-4To
rrに調整する。この時、連結部２５の電子加速電極４２
の電子導入孔４２ｂまたは４２ｃから電子が反応室２６
に移動すると共に、電子導入孔の周囲に穿設された導入
孔５０あるいは５１を通って、中性粒子が電子の流れに
逆流して反応室２６から連結部２５に移動する。そのた
め、Ｐ4〜Ｐ3＜Ｐ2が維持され、プラズマ中のイオンは
半導体ウェハ７の表面上のプラズマシース中で加速され
半導体ウェハ７のエッチングが成される。この時、反応
室２６に接続された真空装置により余剰の反応ガスＧ２
は排気孔４８より排気され、プラズマ反応により生じた
活性ガスは連結部２５に移動することはない。Electrons extracted by the plasma stably generated in the plasma generation chamber 24 in this way are accelerated by applying an acceleration voltage V2 between the electron acceleration electrode 42 and the anode electrode 40 of the connecting portion 25. Is accelerated by. Since the length of the connecting portion 25 in the electron moving direction is short, the electrons are efficiently accelerated and introduced into the reaction chamber 26 even if the diameter of the solenoid 43 is not large. At this time, the on-off valve 47 opened by the vacuum device connected to the reaction chamber 26 is used to exhaust gas from the exhaust hole 48, and the reaction chamber 26 and the connecting portion 25 are set to a desired degree of vacuum, for example, 10−6 to 10−7 Torr. I'll do it. Since the connecting portion 25 has a small volume, it is sufficiently evacuated by the vacuum device connected to the reaction chamber 26. Then, the reaction chamber 26
The reaction gas G2 is introduced into the chamber, and the accelerated electrons move from the connecting portion 25 to irradiate the reaction gas to generate plasma in the plasma region 46. The vacuum pressure at this time is 10-3 to 10-4 To
Adjust to rr. At this time, the electron acceleration electrode 42 of the connecting portion 25
Electrons are introduced from the electron introducing hole 42b or 42c of the reaction chamber 26
At the same time, the neutral particles flow back into the flow of electrons through the introduction holes 50 or 51 formed around the electron introduction hole and move from the reaction chamber 26 to the connecting portion 25. Therefore, P4 to P3 <P2 is maintained, and the ions in the plasma are accelerated in the plasma sheath on the surface of the semiconductor wafer 7 to etch the semiconductor wafer 7. At this time, the excess reaction gas G2 is removed by the vacuum device connected to the reaction chamber 26.
Is exhausted from the exhaust hole 48, and the active gas generated by the plasma reaction does not move to the connecting portion 25.
【００２０】尚、上記説明は連結部に１のソレノイドを
巻装した場合についてであるが、本発明は連結部に巻装
するソレノイドを分割し、図示はしないが、アノード電
極４０と、電子加速電極４２の外周の連結部２５の外側
に、それぞれソレノイドを別個に設けてもよい。この
時、２のソレノイドは同じ仕様のものが好ましく、中心
間の距離はソレノイドの内径と外径の平均の等倍から３
倍程度が適当である。このようにソレノイドをアノード
電極４０と、電子加速電極４２に分割して設けると、ア
ノード電極４０と、電子加速電極４２との磁場を各々別
個に調整できるため、電子の流入量を効率よくコントロ
ールできる。Although the above description is for the case where one solenoid is wound around the connecting portion, the present invention divides the solenoid wound around the connecting portion and, although not shown, the anode electrode 40 and the electron acceleration. Solenoids may be separately provided outside the connecting portion 25 on the outer circumference of the electrode 42. At this time, it is preferable that the solenoids of 2 have the same specifications, and the distance between the centers is 3 to 3 times the average of the inner diameter and the outer diameter of the solenoid.
About twice is appropriate. When the solenoid is divided into the anode electrode 40 and the electron accelerating electrode 42 as described above, the magnetic fields of the anode electrode 40 and the electron accelerating electrode 42 can be adjusted separately, so that the inflow amount of electrons can be efficiently controlled. ..
【００２１】更に上記記載のソレノイドは永久磁石で代
用してもよい。図示はしないが、図１におけるソレノイ
ドに代用する永久磁石を電子移動方向に順次互いに逆の
極性を有するように配置することにより、同様の効果を
得ることができる。また、上記実施例では、連結部２５
をプラズマ発生室２４と、反応室２６と別部品で設ける
ものであるが、プラズマ発生室２４と、連結部２５と、
反応室２６とを一体に成形したものであってもよい。Further, the solenoid described above may be replaced by a permanent magnet. Although not shown, the same effect can be obtained by arranging the permanent magnets in place of the solenoid in FIG. 1 so as to sequentially have polarities opposite to each other in the electron movement direction. Further, in the above embodiment, the connecting portion 25
Is provided as a separate component from the plasma generation chamber 24 and the reaction chamber 26. The plasma generation chamber 24, the connecting portion 25, and
It may be integrally formed with the reaction chamber 26.
【００２２】尚、上記実施例は、本発明のプラズマ装置
をエッチング装置に適用した場合について説明したが、
ドーピング装置、酸化膜形成装置、洗浄装置等にも好適
に採用できる。In the above embodiment, the case where the plasma device of the present invention is applied to the etching device has been described.
It can be suitably used for a doping device, an oxide film forming device, a cleaning device and the like.
【００２３】[0023]
【発明の効果】以上の説明からも明らかなように、本発
明のプラズマ装置によれば、放電用ガスをプラズマ化す
るプラズマ発生室と、プラズマ化された反応ガスで被処
理体のプラズマ処理を行なう反応室を連結部で接続し、
連結部にはアノード電極と電子加速電極を設置して、ソ
レノイドを巻装させたため、従来必要であった加速室を
排除できる。しかも、連結部は真空装置に接続される必
要もないことから、排気孔も不要なため、部品数も減少
でき、装置自体も簡略化され、小型化が図れる。As is apparent from the above description, according to the plasma apparatus of the present invention, the plasma generation chamber for converting the discharge gas into plasma and the plasma processing of the object to be processed with the reaction gas converted into plasma. Connect the reaction chambers to be performed at the connecting part,
Since the anode electrode and the electron acceleration electrode are installed in the connecting portion and the solenoid is wound, the acceleration chamber, which is conventionally required, can be eliminated. Moreover, since the connecting portion does not need to be connected to the vacuum device, no exhaust hole is required, so that the number of parts can be reduced, the device itself can be simplified, and the size can be reduced.
【００２４】更に連結部と反応室を区切るように設けら
れる電子加速電極の電子導入孔の周囲に連結部と反応室
を結ぶ通路を設けたため、反応室に存在する中性粒子が
電子移動方向に対して逆流できるため、連結部で加速さ
れた電子を効率よく反応室に導入し、反応ガスをプラズ
マ化でき、効率のよい処理ができる。Further, since a passage connecting the connecting portion and the reaction chamber is provided around the electron introducing hole of the electron accelerating electrode provided so as to divide the connecting portion and the reaction chamber, neutral particles existing in the reaction chamber are moved in the electron moving direction. On the other hand, since it is possible to flow backward, electrons accelerated in the connecting portion can be efficiently introduced into the reaction chamber, and the reaction gas can be turned into plasma, and efficient processing can be performed.
【図１】本発明のプラズマ装置を示す構成図。FIG. 1 is a configuration diagram showing a plasma device of the present invention.
【図２】電子透過率と電子通過距離との関係図。FIG. 2 is a relationship diagram of electron transmittance and electron passage distance.
【図３】図１に示す実施例の要部を示す図。FIG. 3 is a diagram showing a main part of the embodiment shown in FIG.
【図４】他の実施例の要部を示す図。FIG. 4 is a diagram showing a main part of another embodiment.
【図５】従来のプラズマ装置を示す図。FIG. 5 is a diagram showing a conventional plasma device.
７…………半導体ウェハ（被処理体） ２４………プラズマ発生室 ２５………連結部 ２６………反応室 ２８………カソード電極 ４２………電子加速電極 ４２ｂ………導入孔 ５０、５１………通路 Ｇ１………放電用ガス Ｇ２………反応ガス Ｓ…………プラズマ装置 7: Semiconductor wafer (object to be processed) 24: Plasma generation chamber 25: Connection part 26: Reaction chamber 28: Cathode electrode 42: Electron acceleration electrode 42b: Introduction hole 50, 51 ... Passage G1 ... Discharge gas G2 ... Reactive gas S ... Plasma device
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 21/31 Ｃ 8518−4Ｍ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl.5 Identification code Office reference number FI technical display location H01L 21/31 C 8518-4M
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032328AJPH05234945A (en) | 1992-02-19 | 1992-02-19 | Plasma equipment |
| US08/004,066US5397956A (en) | 1992-01-13 | 1993-01-13 | Electron beam excited plasma system |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4032328AJPH05234945A (en) | 1992-02-19 | 1992-02-19 | Plasma equipment |
| Publication Number | Publication Date |
|---|---|
| JPH05234945Atrue JPH05234945A (en) | 1993-09-10 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4032328APendingJPH05234945A (en) | 1992-01-13 | 1992-02-19 | Plasma equipment |
| Country | Link |
|---|---|
| JP (1) | JPH05234945A (en) |
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| Date | Code | Title | Description |
|---|---|---|---|
| A02 | Decision of refusal | Free format text:JAPANESE INTERMEDIATE CODE: A02 Effective date:20000208 |