【０００１】0001
【産業上の利用分野】本発明は、透明基板の表面を光ス
ポットの走査により検査するための光学的検査装置に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical inspection device for inspecting the surface of a transparent substrate by scanning a light spot.
【０００２】0002
【従来の技術】
半導体の製造工程における
光リソグラフィ用のパターンを備えたレチクルやマスク
は、極めて清浄な状態で露光に使用される必要があり、
そのため表面上のゴミやホコリを完全に除去することが
必要である。このためにゴミやホコリ等の検査装置とし
て、被検物体の表面上でレーザスポットを斜めから照射
して走査させ、ゴミやホコリ等により散乱される光を検
出する装置が用いられている。[Conventional technology]
Reticles and masks equipped with patterns for optical lithography in the semiconductor manufacturing process must be used for exposure in extremely clean conditions.
Therefore, it is necessary to completely remove dirt and dust from the surface. For this reason, as an inspection device for dirt, dust, etc., a device is used that irradiates and scans a laser spot obliquely on the surface of an object to be inspected, and detects light scattered by dirt, dust, etc.
【０００３】0003
【発明が解決しようとする課題】ところが従来の装置に
おいては、レチクル（マスク）が透明であるため、表面
の検査の際に、裏面上の形成された所定のパターンによ
る散乱光が迷光として検出系に混入して、誤検出の原因
となり、検出精度を低下させるという問題があった。However, in conventional devices, since the reticle (mask) is transparent, when inspecting the front surface, scattered light from a predetermined pattern formed on the back surface is detected as stray light by the detection system. There is a problem in that the particles get mixed in, causing erroneous detection and reducing detection accuracy.
【０００４】そこで本発明は、このような問題点に鑑み
てなされたもので、レチクルやマスク等の透明基板の表
面検査に際して、裏面での散乱光の影響を極力少なくし
て高い検出精度を有する検査装置を提供することを目的
とする。[0004]The present invention has been made in view of these problems, and provides a method of minimizing the influence of scattered light on the back surface and achieving high detection accuracy when inspecting the surface of a transparent substrate such as a reticle or mask. The purpose is to provide inspection equipment.
【０００５】[0005]
【課題を解決する為の手段】上記問題点解決の為に本発
明では、基本的には図１の断面光路図に示す如く、被検
透明基板５０上に光スポットを形成して所定の方向（図
１では紙面に垂直方向）で走査するための照射光学系１
０と、該被検透明基板５０上表面からの反射散乱光を検
出するための検出光学系２０とを有する光学的検査装置
において、前記検出光学系２０として、被検透明基板５
０上の光スポットの像を形成するための受光対物レンズ
２１と、該受光対物レンズ２１の像面上にて前記光スポ
ットの走査軌跡と共役なスリット開口２４を有する遮光
板２３と、該遮光板２３のスリット開口２４を通過する
光を検出する光検出手段６０とを設け、被検透明基板５
０上において検出光学系２０の光軸Ａｘ２０を前記照射
光学系１０の光軸Ａｘ１０と同一方向に傾斜させたもの
である。ここで、被検透明基板５０表面からの散乱光が
受光対物レンズ２２により集光され、スリット開口２４
を通して検出される。そして、照射光学系１０光軸の傾
斜角Ａ、検出光学系２０光軸の傾斜角Ｂ、受光対物レン
ズ２１の倍率及び前記スリット２４の幅は、前記被検透
明基板の裏面からの散乱光が該スリット内に入射しない
ように組み合わせて構成したものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention basically forms a light spot on a transparent substrate 50 to be tested and directs it in a predetermined direction, as shown in the cross-sectional optical path diagram of FIG. Irradiation optical system 1 for scanning (in the direction perpendicular to the plane of the paper in Figure 1)
0, and a detection optical system 20 for detecting reflected and scattered light from the upper surface of the transparent substrate 50 to be tested.
a light-receiving objective lens 21 for forming an image of a light spot on 0; a light-shielding plate 23 having a slit opening 24 that is conjugate with the scanning locus of the light spot on the image plane of the light-receiving objective lens 21; A light detection means 60 for detecting light passing through the slit opening 24 of the plate 23 is provided, and the transparent substrate 5 to be tested is
0, the optical axis Ax20 of the detection optical system 20 is inclined in the same direction as the optical axis Ax10 of the irradiation optical system 10. Here, the scattered light from the surface of the transparent substrate 50 to be tested is collected by the light receiving objective lens 22, and the slit opening 24
detected through. The inclination angle A of the optical axis of the irradiation optical system 10, the inclination angle B of the optical axis of the detection optical system 20, the magnification of the light-receiving objective lens 21, and the width of the slit 24 are determined so that the scattered light from the back surface of the transparent substrate to be inspected is The combination is configured so that the light does not enter the slit.
【０００６】また、上記の基本構成において、検出光学
系２０は、照射光学系１０の光軸を挟んで、前記光スポ
ットの走査方向に偏芯して並列配置された２つの受光対
物レンズを有する構成とすることが好ましい。Furthermore, in the above basic configuration, the detection optical system 20 has two light-receiving objective lenses arranged parallel to each other with the optical axis of the irradiation optical system 10 in between and eccentrically arranged in the scanning direction of the light spot. It is preferable to set it as a structure.
【０００７】[0007]
【作用】図１に示した如く、被検透明基板５０上におい
て検出光学系２０の光軸Ａｘ２０を前記照射光学系１０
の光軸Ａｘ１０と同一方向に傾斜させた構成における、
具体的な構成を図２を用いて説明する。図２は照射光学
系により被検透明基板５０の表面５０ａ 上に形成され
る光スポットを中心として、照射ビーム１００ と受光
ビーム２００ との様子を示した概略断面の拡大図であ
る。被検透明基板５０の上面５０ａ 上に集光された光
スポットは、被検透明基板５０内で屈折し、裏面５０ｂ
に達し、ここに形成されたパターン面からの散乱光が
発生する。この散乱光のうち、検出光学系に入射して最
も大きな影響を与える恐れがある光は、検出光学系の光
軸Ａｘ２０にほぼ平行で被検透明基板５０表面５０ａ
上にて受光ビーム２００ に最も近い位置に到達する光
線３０である。[Operation] As shown in FIG. 1, the optical axis Ax20 of the detection optical system 20 is aligned with the irradiation optical system
In a configuration tilted in the same direction as the optical axis Ax10 of
The specific configuration will be explained using FIG. 2. FIG. 2 is an enlarged schematic cross-sectional view showing the state of the irradiation beam 100 1 and the received light beam 200 2 centered on the light spot formed on the surface 50a of the transparent substrate 50 to be inspected by the irradiation optical system. The light spot focused on the upper surface 50a of the transparent substrate 50 to be tested is refracted within the transparent substrate 50 to be tested, and
, and scattered light is generated from the pattern surface formed here. Among these scattered lights, the light that is likely to enter the detection optical system and have the greatest influence is approximately parallel to the optical axis Ax20 of the detection optical system and is located on the surface 50a of the transparent substrate 50 to be tested.
It is the light ray 30 that reaches the position closest to the received beam 200 at the top.
【０００８】図２に示すように、照射光学系１０のビー
ム照射角すわなち照射光学系光軸と被検面法線との角度
Ａ、検出光学系２０のビーム受光角すわなち検出光学系
光軸と被検面法線との角度Ｂ、受光対物レンズ２１の倍
率及び前記スリット２４の幅に関して、被検透明基板５
０の裏面５０ｂ から生ずる迷光を遮光する為の条件に
ついて説明する。As shown in FIG. 2, the beam irradiation angle of the irradiation optical system 10, that is, the angle A between the optical axis of the irradiation optical system and the normal line of the test surface, and the beam reception angle of the detection optical system 20, that is, the angle A between the optical axis of the irradiation optical system and the normal to the surface to be detected. Regarding the angle B between the optical axis of the system and the normal to the surface to be tested, the magnification of the light-receiving objective lens 21, and the width of the slit 24, the transparent substrate 5 to be tested
Conditions for blocking stray light generated from the back surface 50b of 0 will be explained.
【０００９】被検透明基板５０の裏面での散乱光が迷光
とならない条件は、受光光学系２０のスリット開口２４
に到達できない条件であり、散乱光３０が被検透明基板
５０から空気中に射出する時の位置と光スポット位置と
の距離Δが、スリット幅δに受光対物レンズによる倍率
Ｍ（実際の光線の向きとは逆に、スリットが被検透明物
体上に投影される倍率）を掛けたものより大きくなるこ
とである。このとき、スリット幅δは、受光対物レンズ
の収差によるスポットの拡がりを考慮して決定されるこ
とが望ましい。The condition that the scattered light on the back surface of the transparent substrate 50 to be tested does not become stray light is that the slit opening 24 of the light receiving optical system 20
This is a condition in which the distance Δ between the position where the scattered light 30 is emitted from the transparent substrate 50 to be tested into the air and the light spot position is the slit width δ and the magnification M by the light receiving objective lens (of the actual light beam). The opposite of the orientation is that the slit will be larger than the magnification (magnification) projected onto the transparent object to be examined. At this time, it is desirable that the slit width δ is determined in consideration of the spread of the spot due to the aberration of the light-receiving objective lens.
【００１０】ここで、受光対物レンズ２２のスリット開
口２４と被検透明基板表面５０ａ 間の倍率Ｍ、及びス
リット幅δに対して、被検透明基板表面５０ａ 上での
スリット開口の幅はＭδに相当する。図２で照射光学系
１０による集光スポットの開口数、即ち集光対物レンズ
１１の開口数ＮＡ１ 、受光対物レンズ２２の被検透明
基板５０側開口数ＮＡ２ については、以下の関係が成
り立つ。Here, with respect to the magnification M between the slit opening 24 of the light-receiving objective lens 22 and the surface 50a of the transparent substrate to be tested, and the slit width δ, the width of the slit opening on the surface 50a of the transparent substrate to be tested is Mδ. Equivalent to. In FIG. 2, the following relationship holds true for the numerical aperture of the focused spot by the irradiation optical system 10, that is, the numerical aperture NA1 of the focusing objective lens 11, and the numerical aperture NA2 of the light receiving objective lens 22 on the side of the transparent substrate 50 to be inspected.
【００１１】α ＝ Ａ − ｓｉｎ−１ＮＡ１
■β ＝ Ｂ ＋ ｓｉｎ−１Ｎ
Ａ２ ■ここで、α、βはそれぞれ、
照射ビーム内の最大角度の光の入射角、及び受光ビーム
内の最大角度の光の射出角であり、α’、β’はそれぞ
れの被検透明基板５０内での屈折角である。従って、ｎｓｉｎ α’＝ｓｉｎ α
■ｎｓｉｎ β’＝ｓｉｎ β
■の関係が成立しており、散乱光３０が被検
透明基板５０から空気中に射出する時の位置と光スポッ
ト位置との距離Δは、Δ＝ｄ（ｔａｎ α’− ｔａｎ β’） ■
と与えられる。α=A−sin−1NA1
■β = B + sin-1N
A2 ■Here, α and β are respectively,
These are the incident angle of the light at the maximum angle in the irradiation beam and the exit angle of the light at the maximum angle in the received light beam, and α' and β' are the refraction angles within the respective transparent substrates 50 to be tested. Therefore, n sin α'=sin α
■nsin β'=sin β
The relationship (2) is established, and the distance Δ between the position where the scattered light 30 is emitted from the transparent substrate 50 to be tested into the air and the light spot position is Δ=d(tan α'- tan β')
is given.
【００１２】ここで、最も大きな影響を生ずる恐れのあ
る散乱光線３０の射出角をβと考えれば、受光光学系か
ら見た照射スポットとの距離は、Δｃｏｓβとなる。従
って、被検透明基板５０の裏面での散乱光が迷光となら
ない条件、即ち受光光学系２０のスリット開口２４に到
達できない条件は、Δｃｏｓ β ≧ Ｍδとなる。[0012] Here, if the exit angle of the scattered light beam 30 that is likely to cause the greatest influence is β, then the distance from the irradiation spot as seen from the light receiving optical system is Δcosβ. Therefore, the condition that the scattered light on the back surface of the transparent substrate 50 to be tested does not become stray light, that is, the condition that the light cannot reach the slit opening 24 of the light-receiving optical system 20, is Δcos β≧Mδ.
【００１３】いま、■式を用いて書換えれば、α（ｔａ
ｎ α’−ｔａｎ β’）ｃｏｓ β≧Ｍδ ■
となり、この■式が迷光を除くための条件を与える。計
算の都合上■式において、ｃｏｓ βをｃｏｓ β’に
置き換えるとｄ（ｔａｎ α’−ｔａｎ β’）ｃｏｓ β’＞ｄ（
ｔａｎ α’ −ｔａｎ β’）ｃｏｓ β≧Ｍδ
■ ｔａｎ α’ｃｏｓ β’−ｓｉｎ β’≧
Ｍδ／ｄNow, if we rewrite using the formula (■), we get α(ta
n α'-tan β') cos β≧Mδ ■
This equation (2) gives the conditions for eliminating stray light. For convenience of calculation, if cos β is replaced by cos β' in equation (2), d(tan α'-tan β') cos β'>d
tan α' - tan β') cos β≧Mδ
■ tan α'cos β'-sin β'≧
Mδ/d
【００１４】[0014]
【数２】[Math 2]
【００１５】ここで、■式を用いて書き直せば、満たす
べき条件は、[0015] Here, if we rewrite it using equation (2), the conditions to be satisfied are:
【００１６】[0016]
【数３】[Math 3]
【００１７】となる。パターンからの迷光を小さくする
為には、検出光学系の射出角Ｂを照射光学系によるビー
ム入射側と同じ側にとり、しかも可能な限り大きくとる
ことが望ましい。その為には■式よりα、ｎ、ｄ一定の
条件下ではＭδを小さくすればよいことになる。[0017] In order to reduce stray light from the pattern, it is desirable to set the exit angle B of the detection optical system to the same side as the beam incidence side of the irradiation optical system, and to set it as large as possible. To this end, from equation (2), under the condition that α, n, and d are constant, it is sufficient to make Mδ small.
【００１８】[0018]
【実施例】以下、本発明の実施例について説明する。好
適な実施例の基本構成は、前述した第１図の断面光路図
に示すとおりであり、光源手段４０からのレーザ光が対
物レンズ１１及び反射鏡１２を介して被検透明基板５０
上に集光さる。被検透明基板５０からの散乱光は、反射
鏡２１を介して受光対物レンズ２２により遮光板２３の
スポット開口２４上に集光され、フィールドレンズ２５
を介して検出手段６０により光電検出される。[Examples] Examples of the present invention will be described below. The basic configuration of the preferred embodiment is as shown in the cross-sectional optical path diagram in FIG.
The light is focused on the top. Scattered light from the transparent substrate 50 to be tested passes through the reflecting mirror 21 and is focused by the light-receiving objective lens 22 onto the spot aperture 24 of the light-shielding plate 23 .
It is photoelectrically detected by the detection means 60 via.
【００１９】図３は本発明の実施例の構成を示す斜視図
である。レーザ光源４１から供給されるビームは、振動
ミラー４２で偏向され、照射対物レンズとしてのｆθレ
ンズ１１によって、被検透明基板としての被検レチクル
５０上の表面５０ａ 上にレーザスポットを形成し、振
動ミラー４２の振動に伴って軌跡５１が描かれる。反射
鏡１２及び１３は光路を屈曲して所定の照射角Ａでビー
ムを照射するための機能を有している。そして、照射光
学系の光軸Ａｘ２０ｂ を挟んで、一対の検出光学系が
並列かつ対象に配置されている。各検出光学系は図１に
示したのと同様の基本構成を有している。具体的には、
被検レチクル５０の表面５０ａ 上のゴミやホコリ等の
異物からの散乱光２００ は、反射鏡２１で反射された
後受光対物レンズ２２ａ，２２ｂ により遮光板２３ａ
，２３ｂ のスリット開口２４ａ，２４ｂ 上に集光さ
れ、フィールドレンズ２５ａ，２５ｂ を通して光電検
出器６０ａ，６０ｂ によって光電検出される。ここで
、検出光学系の反射鏡２２は、検出光学系の受光角度Ｂ
を前述した条件を満たすように適切な角度に配置されて
いる。そして、この構成においても、各遮光板のスリッ
ト開口２４ａ，２４ｂ が被検透明基板表面５０ａ 上
のレーザスポット軌跡５１と共役なのは言うまでもない
。FIG. 3 is a perspective view showing the configuration of an embodiment of the present invention. A beam supplied from a laser light source 41 is deflected by a vibrating mirror 42, and a laser spot is formed on a surface 50a of a test reticle 50 as a test transparent substrate by an fθ lens 11 serving as an irradiation objective lens, and the beam is vibrated. A locus 51 is drawn as the mirror 42 vibrates. The reflecting mirrors 12 and 13 have a function of bending the optical path and irradiating the beam at a predetermined irradiation angle A. A pair of detection optical systems are arranged in parallel and symmetrically across the optical axis Ax20b of the irradiation optical system. Each detection optical system has the same basic configuration as shown in FIG. in particular,
Scattered light 200 from foreign objects such as dirt and dust on the surface 50a of the test reticle 50 is reflected by the reflecting mirror 21 and then passed through the light-receiving objective lenses 22a and 22b to the light-shielding plate 23a.
, 23b, and is photoelectrically detected by photodetectors 60a, 60b through field lenses 25a, 25b. Here, the reflecting mirror 22 of the detection optical system has a light receiving angle B of the detection optical system.
are placed at appropriate angles to meet the conditions described above. Also in this configuration, it goes without saying that the slit openings 24a, 24b of each light shielding plate are conjugate with the laser spot locus 51 on the surface 50a of the transparent substrate to be tested.
【００２０】被検透明基板５０の裏面での散乱光が迷光
とならない為に、前述した■式よりα、ｎ、ｄ一定の条
件下ではＭδを小さくすればよいのであるが、実際上ス
リット幅δは、受光対物レンズの収差による拡がりて決
まり、その値を小さくすることは困難である。このため
、受光対物レンズによる結像倍率Ｍを小さくすれば良い
ことになるが、スリットの長さが長くなるため、走査軌
跡と受光対物レンズの大きさとの関係から、実用的には
、Ｍ≧２．５ 程度とすることが好ましい。In order to prevent the scattered light on the back surface of the transparent substrate 50 to become stray light, it is sufficient to make Mδ small under the condition of α, n, and d being constant according to the above-mentioned formula (2), but in practice, the slit width δ is determined by the spread due to the aberration of the light-receiving objective lens, and it is difficult to reduce its value. For this reason, it is sufficient to reduce the imaging magnification M by the light-receiving objective lens, but since the length of the slit becomes long, from the relationship between the scanning locus and the size of the light-receiving objective lens, practically speaking, M≧ It is preferable to set it to about 2.5.
【００２１】すなわち、このような比較的小さい倍率範
囲においては、レチクル側の開口数を一定とした場合、
スリット側の開口数が小さくなり、スリット長は長くな
るものの、収差によるスポットの拡がりをより小さくす
ることができるのでスリット幅を小さくすることが可能
となり、迷光をより良好に除去することが可能となり、
相乗効果を生ずる。That is, in such a relatively small magnification range, if the numerical aperture on the reticle side is constant,
Although the numerical aperture on the slit side becomes smaller and the slit length becomes longer, it is possible to further reduce the spread of the spot due to aberrations, making it possible to reduce the slit width and better remove stray light. ,
Creates a synergistic effect.
【００２２】このような観点から求められた好適な数値
例は以下のとおりである。Ａ＝４５°、ＮＡ１ ＝０．０３５７（Ｆ／１４に相当
）、ｄ＝２．３ 、ｎ＝１．５ 、Ｍ＝３．５ 、δ＝
０．２のときβ’≒１１．３° と求められる。従っ
て、受光ビーム内の最大角度β＝１７．１°となり、検
出光学系により集光されるべきビームの射出角、即ち検
出光学系の光軸の傾き角は、Ｂ＝１４．２°となる。こ
れらはほぼ前述の条件■を満足している。[0022] Preferred numerical examples determined from this viewpoint are as follows. A=45°, NA1=0.0357 (equivalent to F/14), d=2.3, n=1.5, M=3.5, δ=
When 0.2, β'≒11.3° is obtained. Therefore, the maximum angle β in the received beam is 17.1°, and the exit angle of the beam to be focused by the detection optical system, that is, the tilt angle of the optical axis of the detection optical system is B = 14.2°. . These almost satisfy the above-mentioned condition (2).
【００２３】また、一般に被検透明基板の裏面５０ｂ
からの散乱光のうち、ビームスポットの走査軌跡に垂直
な方向の光の散乱光強度が強く迷光になり易い傾向にあ
るが、上記の構成においては、照射光学系１０の光軸を
挟んで、光スポットの走査方向に偏芯して並列に対象に
配置された２つの受光対物レンズを有する構成として、
検出光学系を二組持っていることにより、検出精度の向
上が可能である。すなわち、被検透明基板５０上のゴミ
やホコリ等の異物からの散乱光はほぼ一様であるから、
並列に対象配置した二組の検出光学系による検出信号の
アンドを取る等、両者の信号を比較することによって、
迷光によるノイズを取り除くことがで容易となるのであ
る。[0023] Generally, the back surface 50b of the transparent substrate to be tested is
Among the scattered light from the beam spot, the scattered light in the direction perpendicular to the scanning locus of the beam spot tends to be strong and easily become stray light. As a configuration having two light-receiving objective lenses arranged symmetrically in parallel with eccentricity in the scanning direction of the light spot,
By having two sets of detection optical systems, detection accuracy can be improved. That is, since the scattered light from foreign substances such as dirt and dust on the transparent substrate 50 to be tested is almost uniform,
By comparing the two signals, such as by taking the AND of the detection signals from two sets of detection optical systems arranged in parallel,
This becomes easier by removing noise caused by stray light.
【００２４】尚、本実施例の構成においては、被検透明
基板５０としてのレチクルの厚さが変化した場合には、
受光対物レンズの光軸方向の移動によりピント合わせを
行い、また遮光板を偏芯移動させてスリット開口の位置
を調整することによって、対応することが可能である。In the configuration of this embodiment, if the thickness of the reticle serving as the transparent substrate 50 to be tested changes,
This can be achieved by focusing by moving the light-receiving objective lens in the optical axis direction, and by eccentrically moving the light-shielding plate to adjust the position of the slit opening.
【００２５】[0025]
【発明の効果】以上のように本発明の検査装置によれば
、被検透明物体としてのレチクル等の表面検査の時に、
裏面に形成されたパターンから発生する迷光を良好に遮
光することができるので、Ｓ／Ｎが高く誤検出の少ない
検査が可能となる。As described above, according to the inspection apparatus of the present invention, when inspecting the surface of a reticle or the like as a transparent object to be inspected,
Since stray light generated from the pattern formed on the back surface can be effectively blocked, inspection with a high S/N ratio and fewer false detections is possible.
【図１】本発明による検査装置の基本構成を示す断面光
路図。FIG. 1 is a cross-sectional optical path diagram showing the basic configuration of an inspection device according to the present invention.
【図２】本発明における条件を説明するための拡大光路
図。FIG. 2 is an enlarged optical path diagram for explaining conditions in the present invention.
【図３】本発明による実施例の構成を示す斜視図。FIG. 3 is a perspective view showing the configuration of an embodiment according to the present invention.
１０…照射光学系２０…検出光学系５０…被検透明基板５１…スポット走査軌跡２２…受光対物レンズ２４…スリット開口２５…フィールドレンズ６０…検出手段10...Irradiation optical system20...Detection optical system50...Test transparent substrate51...Spot scanning trajectory22... Light receiving objective lens24...Slit opening25...Field lens60...Detection means
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03039871AJP3106521B2 (en) | 1991-03-06 | 1991-03-06 | Optical inspection equipment for transparent substrates |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03039871AJP3106521B2 (en) | 1991-03-06 | 1991-03-06 | Optical inspection equipment for transparent substrates |
| Publication Number | Publication Date |
|---|---|
| JPH04277643Atrue JPH04277643A (en) | 1992-10-02 |
| JP3106521B2 JP3106521B2 (en) | 2000-11-06 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03039871AExpired - Fee RelatedJP3106521B2 (en) | 1991-03-06 | 1991-03-06 | Optical inspection equipment for transparent substrates |
| Country | Link |
|---|---|
| JP (1) | JP3106521B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509667A (en)* | 1999-09-16 | 2003-03-11 | エムケーエス インストゥルメンツ インコーポレーテッド | Method and apparatus for optical measurement of layer and surface properties |
| JP2008292171A (en)* | 2007-05-22 | 2008-12-04 | Toray Ind Inc | Device and method for inspecting surface, and method for inspecting polymer film surface |
| JP2014044094A (en)* | 2012-08-24 | 2014-03-13 | Hitachi High-Technologies Corp | Substrate inspection method and device |
| CN112469985A (en)* | 2018-07-26 | 2021-03-09 | 株式会社岛津制作所 | Light scattering detection device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509667A (en)* | 1999-09-16 | 2003-03-11 | エムケーエス インストゥルメンツ インコーポレーテッド | Method and apparatus for optical measurement of layer and surface properties |
| JP2008292171A (en)* | 2007-05-22 | 2008-12-04 | Toray Ind Inc | Device and method for inspecting surface, and method for inspecting polymer film surface |
| JP2014044094A (en)* | 2012-08-24 | 2014-03-13 | Hitachi High-Technologies Corp | Substrate inspection method and device |
| CN112469985A (en)* | 2018-07-26 | 2021-03-09 | 株式会社岛津制作所 | Light scattering detection device |
| Publication number | Publication date |
|---|---|
| JP3106521B2 (en) | 2000-11-06 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |