【発明の詳細な説明】［産業上の利用分野コ本発明は、半導体膜の形成方法に関する。より具体的に
いえば、磁気センサー等に用いるためのＩｎＳｂ膜やＧ
ａＡｓ膜等の半導体膜を形或するための方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a semiconductor film. More specifically, InSb films and G
The present invention relates to a method for forming a semiconductor film such as an aAs film.
［背景技術コ磁気センサー等に用いられる半導体膜を形戒する方法と
しては、従来はガラス基板やフェライト基板等の基板の
表面に直接ＩｎＳｂＭｌを成膜している。[Background Art] Conventionally, as a method for forming a semiconductor film used in a magnetic sensor or the like, an InSbMl film is directly formed on the surface of a substrate such as a glass substrate or a ferrite substrate.
また、別な従来例としては、基板の絶縁性や平？性を良
好にするため，基板の表面にＳｉＯ■やＡ１。０３等の
非品質の絶縁膜を形或した後、この非晶質絶縁膜の上に
ＩｎＳｂ膜を形成したものもある。In addition, as another conventional example, there is a problem with the insulation and flatness of the board. In some cases, in order to improve the properties, a non-quality insulating film such as SiO2 or A1.03 is formed on the surface of the substrate, and then an InSb film is formed on this amorphous insulating film.
［発明が解決しようとする課題］従来にあっては、上記のように基板の表面に直接１ｎＳ
ｂ膜を成膜したものや、基板の表面に非晶質絶縁膜を形
成し、その上にＩｎＳｂ膜を威膜したものが用いられて
いるが、これらの方法によって成膜されたＩｎＳｂ膜は
、結晶が配向させられておらず、キャリア移動度の大き
な半導体膜を得ることができなかった。[Problem to be solved by the invention] Conventionally, as mentioned above, 1 nS was applied directly to the surface of the substrate.
InSb films formed by these methods are used. However, since the crystals were not oriented, it was not possible to obtain a semiconductor film with high carrier mobility.
しかして、本発明は叙上の従来例の欠点に鑑みてなされ
たものであり、その目的とするところはキャリア移動度
の大きなＩｎＳｂ膜やＧａＡｓ膜等の半導体膜を成膜す
るための方法を提供することにある。The present invention has been made in view of the drawbacks of the conventional examples described above, and its purpose is to provide a method for forming semiconductor films such as InSb films and GaAs films with high carrier mobility. It is about providing.
［課題を解決するための手段コこのため、本発明の半導体膜の形成方法は、ガラス基板
やフェライト基板等の基板の表面にＣａＦａ＋ＳｒＦ２
． ＢａＦ２等の弗化物からなる配向性絶縁膜を形成し
、この配同性絶縁膜の上に半導体膜を威膜することによ
って該半導体膜を配向させたことを特徴としている。[Means for Solving the Problems] For this reason, the method for forming a semiconductor film of the present invention is based on the method of forming a semiconductor film by depositing CaFa+SrF2 on the surface of a substrate such as a glass substrate or a ferrite substrate.
．． The method is characterized in that an oriented insulating film made of a fluoride such as BaF2 is formed, and a semiconductor film is deposited on top of this oriented insulating film to orient the semiconductor film.
［作用コ本発明にあっては、基板の上に弗化物からなる配向性絶
縁膜を形或した後、この上に半導体膜を威膜するように
したので、半導体膜は成膜時に配向性絶縁膜の上に配向
させられてゆき、この結果配向した半導体膜を得ること
ができる。配向性の強い半導体膜は、キャリアの移動度
が大きくなるので、上記のような方法で半導体膜を形或
することにより、キャリア移動度の大きな半導体膜を得
ることができる。[Function] In the present invention, after forming an oriented insulating film made of fluoride on a substrate, a semiconductor film is formed on this. The semiconductor film is oriented on the insulating film, and as a result, an oriented semiconductor film can be obtained. A semiconductor film with strong orientation has high carrier mobility, so by forming the semiconductor film using the method described above, a semiconductor film with high carrier mobility can be obtained.
［実施例コ以下、本発明の実施例を添付図に基づいて詳述する。[Example code]Embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
図面に示すように、ガラス基板やフェライト基板等の基
板ｌの表面には、真空蒸着法を用いてＣａＦ２． Ｓｒ
Ｆ．． ＢａＦ２等の弗化物からなる配向性絶縁膜２が
形成される。ただし、この配向性絶縁膜２を得る方法と
しては、真空蒸着法に限るものでなく、基板１の表面に
弗化物からなる絶縁膜を配向させることができればどの
ような方法であっても良い。As shown in the drawing, CaF2. Sr.
F. ．． An oriented insulating film 2 made of fluoride such as BaF2 is formed. However, the method for obtaining this oriented insulating film 2 is not limited to the vacuum evaporation method, and any method may be used as long as the insulating film made of fluoride can be oriented on the surface of the substrate 1.
この後、配向性絶縁膜２の上に、真空蒸着法によってＩ
ｎＳｂ膜３を成膜する。ＩｎＳｂ膜は配向性絶縁膜２の
上に形成されることにより、成膜時に配同性絶縁膜２に
よって配向させられ、この結果、配向したＴｎＳｂ膜３
を得ることができる。配向性の強い半導体膜は、キャリ
ア移動度が大きくなるので、上記のような方法によって
ＩｎＳｂ膜３を配向させることにより、キャリア移動度
の大きなＩｎＳｂ膜３を得ることができる。Thereafter, I
An nSb film 3 is formed. Since the InSb film is formed on the oriented insulating film 2, it is oriented by the oriented insulating film 2 during film formation, and as a result, the oriented TnSb film 3
can be obtained. A semiconductor film with strong orientation has high carrier mobility, so by orienting the InSb film 3 using the method described above, it is possible to obtain an InSb film 3 with high carrier mobility.
上記実施例では、ＩｎＳｂ膜について説明したが、半導
体膜はＩｎＳｂ膜に限らず、ＧａＡｓ等の半導体材料で
あってもよい。しかして、このような配向性半導体膜を
形成された基板は、高移動度の必要な各種センサーや半
導体装置に用いることができる。In the above embodiments, the InSb film was described, but the semiconductor film is not limited to the InSb film, and may be made of a semiconductor material such as GaAs. Therefore, a substrate on which such an oriented semiconductor film is formed can be used for various sensors and semiconductor devices that require high mobility.
例えば，磁気センサーに用いることにより、高感度の磁
気センサーを得ることができる。For example, by using it in a magnetic sensor, a highly sensitive magnetic sensor can be obtained.
［発明の効果コ本発明によれば、半導体膜を配向させてキャリア移動度
の大きな半導体膜を得ることができる。[Effects of the Invention] According to the present invention, a semiconductor film with high carrier mobility can be obtained by orienting the semiconductor film.
したがって、例えば磁気センサー等に用いることにより
、高感度のセンサーを得ることができる。Therefore, by using it, for example, in a magnetic sensor, a highly sensitive sensor can be obtained.
また、高移動度を必要とする半導体装置等にも用いるこ
とができる。Further, it can be used for semiconductor devices etc. that require high mobility.
図面は、本発明の方法により基板の上に形成された半導
体膜を示す断面図である。１・・・基板２・・・配向性絶縁膜３・・・ＩｎＳｂ膜３２The drawing is a cross-sectional view showing a semiconductor film formed on a substrate by the method of the present invention. 1...Substrate 2...Oriented insulating film 3...InSb film 3 2
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1232220AJPH0394419A (en) | 1989-09-06 | 1989-09-06 | Formation of semiconductor film |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1232220AJPH0394419A (en) | 1989-09-06 | 1989-09-06 | Formation of semiconductor film |
| Publication Number | Publication Date |
|---|---|
| JPH0394419Atrue JPH0394419A (en) | 1991-04-19 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1232220APendingJPH0394419A (en) | 1989-09-06 | 1989-09-06 | Formation of semiconductor film |
| Country | Link |
|---|---|
| JP (1) | JPH0394419A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101892504A (en)* | 2010-07-06 | 2010-11-24 | 浙江大学 | Method for preparing strontium fluoride or rare earth doped strontium fluoride film by electrodeposition |
| CN102140662A (en)* | 2011-01-18 | 2011-08-03 | 浙江大学 | Method for preparing NaYF4: yb, er up-conversion fluorescent material by electrodeposition |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101892504A (en)* | 2010-07-06 | 2010-11-24 | 浙江大学 | Method for preparing strontium fluoride or rare earth doped strontium fluoride film by electrodeposition |
| CN102140662A (en)* | 2011-01-18 | 2011-08-03 | 浙江大学 | Method for preparing NaYF4: yb, er up-conversion fluorescent material by electrodeposition |
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