【発明の詳細な説明】〔発明の技術分野〕 本発明は、微細加工に供される試料を保持固定
する静電チヤツク装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in an electrostatic chuck device for holding and fixing a sample to be subjected to microfabrication.
半導体ウエハやマスク等の試料を加工或いは検
査する工程においては、試料を加工機や検査機の
所定部位に保持固定することが必要となる。特
に、ウエハ上に微細なパターンを描画し多数のト
ランジスタ等を形成する集積回路の製作において
は、ウエハを平坦な面に確実に保持固定すること
が必要である。 In the process of processing or inspecting a sample such as a semiconductor wafer or a mask, it is necessary to hold and fix the sample at a predetermined location of a processing machine or an inspection machine. Particularly, in the production of integrated circuits in which a fine pattern is drawn on a wafer to form a large number of transistors, etc., it is necessary to securely hold and fix the wafer on a flat surface.
従来、このような場合の保持手段として、取り
扱いが簡単で、かつ真空中でも作動可能な静電チ
ヤツク装置が用いられている。この静電チヤツク
装置は、２つの互いに反対に帯電されたコンデン
サ板（電極）間の吸引力を利用するもので、例え
ば第１図に示す如く構成されている。すなわち、
導電性基板１上に絶縁誘電層２を被着してなる静
電チヤツク本体３、及びこの静電チヤツク本体３
上に載置される試料４と導電性基板１との間に高
電圧を印加する電源５から構成され、上記導電性
基板１と試料４とが電極として作用するものとな
つている。なお、静電チヤツク本体３における試
料４の吸引力Ｆは上記印加電圧の大きさに影響さ
れ、一般に次式で示される。 Conventionally, as a holding means in such a case, an electrostatic chuck device that is easy to handle and can be operated even in a vacuum has been used. This electrostatic chuck device utilizes the attractive force between two oppositely charged capacitor plates (electrodes), and is constructed as shown in FIG. 1, for example. That is,
An electrostatic chuck body 3 formed by depositing an insulating dielectric layer 2 on a conductive substrate 1, and this electrostatic chuck body 3
It consists of a power source 5 that applies a high voltage between a sample 4 placed on top and a conductive substrate 1, and the conductive substrate 1 and sample 4 act as electrodes. The attraction force F of the sample 4 on the electrostatic chuck main body 3 is influenced by the magnitude of the above-mentioned applied voltage, and is generally expressed by the following equation.
Ｆ＝１／２εO・εS・Ｓ（Ｖ／ｔ）2……(1) ただし、εOは真空誘電率、εSは比誘電率、Ｓは
面積、Ｖは印加電圧、ｔは絶縁誘電層２の厚さで
ある。 F=1/2εO・εS・S (V/t)2 ...(1) where εO is the vacuum permittivity, εS is the relative permittivity, S is the area, V is the applied voltage, and t is the insulation This is the thickness of the dielectric layer 2.
ところで、この種の装置を電子ビーム描画装置
等の微細加工装置に用いる場合、前記静電チヤツ
ク本体が真空に保持された試料室内に設置される
ことになる。静電チヤツク本体が大気中で操作可
能な所にあれば、試料の平坦度を何らかの方法で
測定したり、ピンセツト等で直接試料を動かして
みて、試料の吸着状態を知ることは可能である。
しかし、静電チヤツク本体が真空中にある場合、
上記のチエツク方法を適用することは困難であ
り、このため微細加工装置に用いられる静電チヤ
ツク装置では試料の吸着状態を知ることはできな
かつた。そして、試料が静電チヤツクに吸着され
ていない状態で微細加工を行うことは、加工精度
の低下、ひいては加工不能の状態を招くことにな
る。 By the way, when this type of device is used in a microfabrication device such as an electron beam lithography device, the electrostatic chuck body is installed in a sample chamber kept in vacuum. If the electrostatic chuck body is located in a place where it can be operated in the atmosphere, it is possible to determine the adsorption state of the sample by measuring the flatness of the sample by some method or by directly moving the sample with tweezers or the like.
However, if the electrostatic chuck body is in a vacuum,
It is difficult to apply the above checking method, and for this reason, it has not been possible to know the adsorption state of the sample with the electrostatic chuck device used in the microfabrication device. If micromachining is performed in a state where the sample is not attracted to the electrostatic chuck, the machining accuracy will deteriorate, and furthermore, machining will become impossible.
なお、試料が吸着されていない状態としては、
試料が静電チヤツクに完全に接触していない場
合、配線コードが何らかの原因で断線した場合、
或いは絶縁誘電層が絶縁破壊した場合等が考えら
れる。 Note that the state where the sample is not adsorbed is as follows:
If the sample is not in complete contact with the electrostatic chuck, or if the wiring cord is disconnected for some reason,
Alternatively, it is possible that the insulating dielectric layer has dielectric breakdown.
本発明の目的は、静電チヤツク本体が真空中に
あつても、静電チヤツク本体上に載置される試料
が確実に保持固定されているかを容易、かつ正確
に知ることができ、試料の微細加工や検査等の信
頼性向上に寄与し得る静電チヤツク装置を提供す
ることにある。 An object of the present invention is to be able to easily and accurately determine whether a sample placed on the electrostatic chuck body is securely held and fixed even when the electrostatic chuck body is in a vacuum. The object of the present invention is to provide an electrostatic chuck device that can contribute to improving the reliability of microfabrication, inspection, etc.
本発明の骨子は、静電チヤツク本体に流れる電
流を検出し、この検出電流値から試料の吸着状態
を判断することにある。すなわち、静電チヤツク
本体に使用されている絶縁誘電層は、絶縁物とは
云うものの無限大の抵抗値を有するものではな
く、その両面に高電圧を印加することによつて微
小な電流が流れる。そして、この電流は回路が開
いていれば零となり、試料が吸着されていればそ
の吸着面積の大きさに対応する値となる。また、
絶縁誘電層が絶縁破壊されていると過大な電流が
流れる。したがつて、上記電流を検出することに
よつて、試料の吸着状態を判断できることにな
る。 The gist of the present invention is to detect the current flowing through the electrostatic chuck body, and to judge the adsorption state of the sample from the detected current value. In other words, although the insulating dielectric layer used in the electrostatic chuck body is an insulator, it does not have an infinite resistance value, and when a high voltage is applied to both sides of the dielectric layer, a minute current flows. . This current becomes zero if the circuit is open, and if a sample is adsorbed, it takes a value corresponding to the size of the adsorption area. Also,
If the insulating dielectric layer has dielectric breakdown, an excessive current will flow. Therefore, by detecting the above-mentioned current, the adsorption state of the sample can be determined.
本発明はこのような点に着目し、静電チヤツク
本体及びこの静電チヤツク本体に高電圧を印加す
るための電源回路からなる静電チヤツク装置にお
いて、上記静電チヤツク本体と電源回路との間に
電流計を挿入し、この電流計の検出値から試料の
吸着状態を判断できるようにしたものである。 The present invention focuses on these points, and provides an electrostatic chuck device comprising an electrostatic chuck body and a power supply circuit for applying high voltage to the electrostatic chuck body. An ammeter is inserted into the chamber, and the adsorption state of the sample can be determined from the value detected by this ammeter.
本発明によれば、電流計の検出値から試料の吸
着状態を判断できるので、試料が静電チヤツク本
体に確実に保持固定されているかを容易、かつ確
実に知ることができ、さらに真空中にあつても上
記保持固定されているかを知ることができる。こ
のため、微細加工装置や検査装置等に用いた場
合、真空中に配置される試料の吸着状態を判断で
きることから加工精度及び検査精度の向上をはか
り得る等の効果が得られる。 According to the present invention, since the adsorption state of the sample can be determined from the detected value of the ammeter, it is possible to easily and reliably know whether the sample is securely held and fixed to the electrostatic chuck body, and furthermore, Even if it happens, you can know whether the above-mentioned holding is fixed or not. Therefore, when used in a microfabrication device, an inspection device, etc., it is possible to determine the adsorption state of a sample placed in a vacuum, thereby providing effects such as improving processing accuracy and inspection accuracy.
第２図は本発明の一実施例に係わる静電チヤツ
ク装置を示す概略構成図である。図中１０は静電
チヤツク本体で、これは前記第１図に示したもの
と基本的には変わらない構造である。すなわち、
導電性基板１１の表面全面を被覆するよう絶縁誘
電層１２が形成され、導電性基板１１の下面には
ねじ等からなる電極端子１３が取着されている。
ここで、絶縁誘電層１２は導電性基板１１に、例
えばアルミナを溶射してなるものである。そし
て、静電チヤツク本体１０はその上面が平坦に形
成され、この平坦部に半導体ウエハ等の試料が載
置されるものとなつている。 FIG. 2 is a schematic diagram showing an electrostatic chuck device according to an embodiment of the present invention. In the figure, reference numeral 10 denotes the electrostatic chuck main body, which has a structure basically the same as that shown in FIG. 1 above. That is,
An insulating dielectric layer 12 is formed to cover the entire surface of the conductive substrate 11, and an electrode terminal 13 made of a screw or the like is attached to the lower surface of the conductive substrate 11.
Here, the insulating dielectric layer 12 is formed by spraying, for example, alumina onto the conductive substrate 11. The electrostatic chuck main body 10 has a flat upper surface, and a sample such as a semiconductor wafer is placed on this flat portion.
一方、前記電極端子１３には保護抵抗１５を介
して直流電源（電源回路）１６の正極側が接続さ
れ、前記試料１４には電流計１７を介して直流電
源１６の負極側（接地側）が接続されている。そ
して、導電性基板１１と試料１４との間に高電圧
が印加され、これらの間に働く吸引力により試料
１４が静電チヤツク本体１０上に保持固定される
ものとなつている。保護抵抗１５は前記絶縁誘電
層１２が絶縁破壊したときに過大電流が流れるの
を防止するもので、電流計１７は数〔nA〕〜数
〔μA〕の微小電流を検出するものである。また、
電流計１７の検出値は比較回路１８に供給されて
いる。この比較回路１８は上記検出値と定常状態
における電流値、すなわち試料１４が静電チヤツ
ク本体１０に確実に保持固定されているときの電
流値とを比較するもので、両者の差が所定の値を
越えるとき異常信号を出力するものとなつてい
る。 On the other hand, the electrode terminal 13 is connected to the positive electrode side of a DC power source (power supply circuit) 16 via a protective resistor 15, and the negative electrode side (ground side) of the DC power source 16 is connected to the sample 14 via an ammeter 17. has been done. A high voltage is applied between the conductive substrate 11 and the sample 14, and the sample 14 is held and fixed on the electrostatic chuck body 10 by the attraction force acting between them. The protective resistor 15 prevents excessive current from flowing when the insulating dielectric layer 12 undergoes dielectric breakdown, and the ammeter 17 detects a minute current of several [nA] to several [μA]. Also,
The detected value of the ammeter 17 is supplied to a comparator circuit 18. This comparison circuit 18 compares the detected value with the current value in a steady state, that is, the current value when the sample 14 is securely held and fixed on the electrostatic chuck body 10, and the difference between the two is determined to be a predetermined value. It is designed to output an abnormal signal when it exceeds the limit.
このような構成であれば、試料１４の静電チヤ
ツク本体１０との吸着状態により試料１４と導電
性基板１１との間の抵抗が変化し、この抵抗変化
に応じて電流計１７の指示値も変化する。このた
め、試料１４を直接観察することなく、さらに試
料１４に機械的な力を加えることなく、電流計１
７の指示値若しくは比較回路１８の出力から試料
１４の吸着状態を判断できることになる。すなわ
ち、装置が正常に作動している場合、静電チヤツ
ク本体１０には微小電流が流れる。この電流は、
印加電圧、絶縁誘電層１２の厚さ及び単位面積当
りの抵抗が予め定まつているので、試料１４の静
電チヤツク本体１０との密着面積に比例したもの
となる。また、試料１４の表面には酸化膜や窒化
膜等が形成されていることもあり、この場合これ
らの膜厚によつても上記電流は変化する。本発明
者等の実験によれば、印加電圧を400〔Ｖ〕、試料
１４として４インチ径シリコンウエハを用いたと
ころ、試料１４が静電チヤツク本体１０上に確実
に保持固定されている正常な状態で、試料１４表
面の酸化膜等の膜厚により数〔nA〕〜数〔μA〕
の範囲の電流が流れることが確認された。 With such a configuration, the resistance between the sample 14 and the conductive substrate 11 changes depending on the adsorption state of the sample 14 and the electrostatic chuck body 10, and the indicated value of the ammeter 17 changes according to this resistance change. Change. Therefore, the ammeter can be used without directly observing the sample 14 or applying mechanical force to the sample 14.
The adsorption state of the sample 14 can be determined from the indicated value 7 or the output of the comparison circuit 18. That is, when the device is operating normally, a small current flows through the electrostatic chuck body 10. This current is
Since the applied voltage, the thickness of the insulating dielectric layer 12, and the resistance per unit area are determined in advance, the applied voltage is proportional to the area of contact between the sample 14 and the electrostatic chuck body 10. Further, an oxide film, a nitride film, etc. may be formed on the surface of the sample 14, and in this case, the above-mentioned current changes depending on the thickness of these films. According to experiments conducted by the present inventors, when the applied voltage was 400 [V] and a 4-inch diameter silicon wafer was used as the sample 14, it was found that the sample 14 was properly held and fixed on the electrostatic chuck body 10. In this state, the value varies from several [nA] to several [μA] depending on the thickness of the oxide film, etc. on the surface of the sample 14.
It was confirmed that a current in the range of .
いま、何らかの原因によつて試料１４が静電チ
ヤツク本体１０と離れている場合、或いは通電ラ
インに断線が生じている場合、電流計１７の指示
値は零となる。また、絶縁誘電層１２が絶縁破壊
している場合、電流計１７の指示値は正常時より
大幅に増大することになる。したがつて、電流計
１７の指示値から試料１４の吸着状態が判断でき
ることになる。 Now, if the sample 14 is separated from the electrostatic chuck main body 10 for some reason, or if there is a break in the current-carrying line, the indicated value of the ammeter 17 will be zero. Further, if the insulating dielectric layer 12 has dielectric breakdown, the indicated value of the ammeter 17 will significantly increase from the normal value. Therefore, the adsorption state of the sample 14 can be determined from the indicated value of the ammeter 17.
かくして本装置によれば、電流計１７の指示値
を見るだけで、試料１４が静電チヤツク本体１０
上に確実に保持固定されているかを容易に、かつ
正確に知ることができる。このため、静電チヤツ
ク本体１０が真空中に設置されていたとしても、
試料１４の保持固定状態を知ることができ、電子
ビーム描画装置等に用いて絶大なる効果を発揮す
る。また、従来装置に電流計１７を付加するのみ
の極めて簡易な構成で実現し得る等の利点があ
る。 Thus, according to this device, simply by looking at the reading on the ammeter 17, the sample 14 is connected to the electrostatic chuck body 10.
You can easily and accurately know whether the device is securely held and fixed on the top. Therefore, even if the electrostatic chuck main body 10 is installed in a vacuum,
It is possible to know the holding and fixing state of the sample 14, and it is extremely effective when used in an electron beam drawing device or the like. Another advantage is that it can be realized with an extremely simple configuration by simply adding the ammeter 17 to the conventional device.
第３図及び第４図はそれぞれ他の実施例を示す
概略構成図であり、これらは先に説明した実施例
の静電チヤツク本体１０を改良したものである。
すなわち、第３図に示すものでは静電チヤツク本
体１０が絶縁基板２１、この基板２１上に被着さ
れた２枚の電極板２２ａ，２２ｂ、及びその上面
を被覆した絶縁誘電層１２で形成されている。そ
して、上記電極板２２ａ，２２ｂ間に電圧が印加
されるものとなつている。この場合、電極板２２
ａから試料１４に電気力線が真直ぐ入り、試料１
４内には磁界は発生せず電極板２２ｂに真直ぐ入
ることになり、これにより試料１４が静電チヤツ
ク本体１０上に保持固定される。また、第４図に
示すものでは静電チヤツク本体１０の絶縁誘電層
１２上の一部に金属膜２３が蒸着形成されてい
る。そして、この金属膜２３と電極端子１３との
間に電圧が印加されるものとなつている。 FIGS. 3 and 4 are schematic diagrams showing other embodiments, each of which is an improvement on the electrostatic chuck body 10 of the previously described embodiment.
That is, in the one shown in FIG. 3, the electrostatic chuck main body 10 is formed of an insulating substrate 21, two electrode plates 22a and 22b deposited on this substrate 21, and an insulating dielectric layer 12 covering the upper surface thereof. ing. A voltage is applied between the electrode plates 22a and 22b. In this case, the electrode plate 22
The electric lines of force enter sample 14 straight from a, and sample 1
No magnetic field is generated in the electrostatic chuck 4 and it enters directly into the electrode plate 22b, thereby holding and fixing the sample 14 on the electrostatic chuck main body 10. Further, in the one shown in FIG. 4, a metal film 23 is formed on a part of the insulating dielectric layer 12 of the electrostatic chuck body 10 by vapor deposition. A voltage is applied between the metal film 23 and the electrode terminal 13.
このような構成であれば、先の実施例と同様な
効果を奏するのは勿論のことであり、さらに試料
１４に直接配線コードを接触させる必要がない等
の利点がある。 With such a configuration, it goes without saying that the same effects as in the previous embodiment can be achieved, and there are further advantages such as there being no need to bring the wiring cord into direct contact with the sample 14.
なお、本発明は上述した各実施例に限定される
ものではない。例えば、前記静電チヤツク本体の
絶縁誘電層は、アルミナの溶射に限定されるもの
ではなく、導電性基板の酸化物、その他絶縁物で
あれば用いてもよい。さらに、静電チヤツク本体
の構造は何ら実施例に限定されるものではなく、
仕様に応じて適宜変更可能である。また、静電チ
ヤツク本体に印加する電圧は必ずしも直流に限る
ものではなく、交流であつてもよい。この場合、
電流計には静電チヤツク本体の静電容量に対応す
る電流も流れることになるが、試料の吸着状態に
より変わる電流は直流電圧を印加した場合と同様
であるので、電流計の指示値から試料の吸着状態
を判断することが可能である。また、前記比較回
路は必ずしも必要なものではないが、この比較回
路の出力を計算機等に供給しておけば、試料の吸
着状態の自動モニタも可能である。さらに、電流
計の挿入個所も仕様に応じて適宜変更可能であ
る。その他、本発明の要旨を逸脱しない範囲で、
種々変形して実施例することができる。 Note that the present invention is not limited to the embodiments described above. For example, the insulating dielectric layer of the electrostatic chuck body is not limited to sprayed alumina, but may be made of oxide of a conductive substrate or any other insulating material. Furthermore, the structure of the electrostatic chuck body is not limited to the embodiments,
It can be changed as appropriate depending on the specifications. Further, the voltage applied to the electrostatic chuck body is not necessarily limited to direct current, but may be alternating current. in this case,
A current corresponding to the capacitance of the electrostatic chuck body will also flow through the ammeter, but the current that changes depending on the adsorption state of the sample is the same as when a DC voltage is applied, so the value indicated on the ammeter indicates that the sample It is possible to judge the adsorption state of. Further, although the comparison circuit is not necessarily required, if the output of the comparison circuit is supplied to a computer or the like, automatic monitoring of the adsorption state of the sample is possible. Furthermore, the insertion point of the ammeter can also be changed as appropriate depending on the specifications. In addition, without departing from the gist of the present invention,
Various modifications can be made to the embodiments.
第１図は従来の静電チヤツク装置を示す概略構
成図、第２図は本発明の一実施例を示す概略構成
図、第３図及び第４図はそれぞれ他の実施例を示
す概略構成図である。 １０……静電チヤツク本体、１１……導電性基
板、１２……絶縁誘電層、１３……電極端子、１
４……試料、１５……保護抵抗、１６……直流電
源（電源回路）、１７……電流計、２１……絶縁
基板、２２ａ，２２ｂ……電極板、２３……金属
膜。 Fig. 1 is a schematic diagram showing a conventional electrostatic chuck device, Fig. 2 is a schematic diagram showing an embodiment of the present invention, and Figs. 3 and 4 are schematic diagrams showing other embodiments. It is. 10... Electrostatic chuck body, 11... Conductive substrate, 12... Insulating dielectric layer, 13... Electrode terminal, 1
4... Sample, 15... Protective resistor, 16... DC power supply (power supply circuit), 17... Ammeter, 21... Insulating substrate, 22a, 22b... Electrode plate, 23... Metal film.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19012482AJPS5979545A (en) | 1982-10-29 | 1982-10-29 | Electrostatic chucking device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19012482AJPS5979545A (en) | 1982-10-29 | 1982-10-29 | Electrostatic chucking device |
| Publication Number | Publication Date |
|---|---|
| JPS5979545A JPS5979545A (en) | 1984-05-08 |
| JPH0351101B2true JPH0351101B2 (en) | 1991-08-05 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19012482AGrantedJPS5979545A (en) | 1982-10-29 | 1982-10-29 | Electrostatic chucking device |
| Country | Link |
|---|---|
| JP (1) | JPS5979545A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61270046A (en)* | 1985-05-22 | 1986-11-29 | Toshiba Mach Co Ltd | Electrostatic chucking device |
| JPH0697676B2 (en)* | 1985-11-26 | 1994-11-30 | 忠弘 大見 | Wafer susceptor device |
| JPH0760849B2 (en)* | 1986-06-05 | 1995-06-28 | 東陶機器株式会社 | Electrostatic chuck plate |
| JPS63139634A (en)* | 1986-11-29 | 1988-06-11 | Tokuda Seisakusho Ltd | electrostatic chuck |
| JPH0691024B2 (en)* | 1987-10-09 | 1994-11-14 | 富士電機株式会社 | Dry thin film processing equipment |
| JP2896155B2 (en)* | 1989-03-17 | 1999-05-31 | 富士通株式会社 | Insulation film inspection device and inspection method for electrostatic chuck for wafer |
| US5179498A (en)* | 1990-05-17 | 1993-01-12 | Tokyo Electron Limited | Electrostatic chuck device |
| US5325261A (en)* | 1991-05-17 | 1994-06-28 | Unisearch Limited | Electrostatic chuck with improved release |
| JP2586768B2 (en)* | 1991-10-31 | 1997-03-05 | 株式会社日立製作所 | Electrostatic suction device |
| JP2804664B2 (en)* | 1992-01-21 | 1998-09-30 | 株式会社日立製作所 | Electrostatic adsorption mechanism of sample and electron beam lithography system |
| JP3271548B2 (en)* | 1997-04-30 | 2002-04-02 | 日新電機株式会社 | Disconnection detection method of electrostatic chuck circuit |
| JP2000340640A (en)* | 1999-05-31 | 2000-12-08 | Toto Ltd | Non-contacting electrostatically attracting apparatus |
| JP2004233672A (en)* | 2003-01-30 | 2004-08-19 | Shin-Etsu Engineering Co Ltd | Substrate bonding equipment |
| JPWO2010021317A1 (en)* | 2008-08-20 | 2012-01-26 | 株式会社アルバック | How to determine the usage limit of an electrostatic chuck |
| JP2011077127A (en)* | 2009-09-29 | 2011-04-14 | Tokyo Electron Ltd | Carrying device |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
| KR102762543B1 (en) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
| CN111344522B (en) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | Including clean mini-environment device |
| JP2019125603A (en)* | 2018-01-11 | 2019-07-25 | 株式会社アルバック | Sucking method |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI799494B (en) | 2018-01-19 | 2023-04-21 | 荷蘭商Ａｓｍ 智慧財產控股公司 | Deposition method |
| KR102695659B1 (en) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing a gap filling layer by plasma assisted deposition |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102600229B1 (en) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | Substrate supporting device, substrate processing apparatus including the same and substrate processing method |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Ａｓｍ 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (en) | 2018-06-04 | 2024-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Wafer handling chamber with moisture reduction |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102854019B1 (en) | 2018-06-27 | 2025-09-02 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming a metal-containing material and films and structures comprising the metal-containing material |
| TWI873894B (en) | 2018-06-27 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102707956B1 (en) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN110970344B (en) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | Substrate holding apparatus, system comprising the same and method of using the same |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
| KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (en) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TWI874340B (en) | 2018-12-14 | 2025-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
| TWI866480B (en) | 2019-01-17 | 2024-12-11 | 荷蘭商Ａｓｍ Ｉｐ 私人控股有限公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
| KR102727227B1 (en) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
| TWI873122B (en) | 2019-02-20 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
| TWI838458B (en) | 2019-02-20 | 2024-04-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Apparatus and methods for plug fill deposition in 3-d nand applications |
| KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
| TWI845607B (en) | 2019-02-20 | 2024-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
| TWI842826B (en) | 2019-02-22 | 2024-05-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR102858005B1 (en) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
| JP2020167398A (en) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | Door openers and substrate processing equipment provided with door openers |
| KR102809999B1 (en) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
| KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
| KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
| KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
| US11289326B2 (en) | 2019-05-07 | 2022-03-29 | Asm Ip Holding B.V. | Method for reforming amorphous carbon polymer film |
| KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
| JP7598201B2 (en) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| JP7612342B2 (en) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | Wafer boat handling apparatus, vertical batch furnace and method |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
| KR20200141931A (en) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | Method for cleaning quartz epitaxial chambers |
| KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
| JP7499079B2 (en) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | Plasma device using coaxial waveguide and substrate processing method |
| CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
| KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR102860110B1 (en) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
| KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| TWI839544B (en) | 2019-07-19 | 2024-04-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
| KR20210010817A (en) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of Forming Topology-Controlled Amorphous Carbon Polymer Film |
| CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
| CN112342526A (en) | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | Heater assembly including cooling device and method of using same |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー．ブイ． | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102806450B1 (en) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
| KR102733104B1 (en) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
| TW202128273A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Gas injection system, reactor system, and method of depositing material on surface of substratewithin reaction chamber |
| TWI846953B (en) | 2019-10-08 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing device |
| KR20210042810A (en) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | Reactor system including a gas distribution assembly for use with activated species and method of using same |
| TWI846966B (en) | 2019-10-10 | 2024-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (en) | 2019-10-16 | 2024-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of topology-selective film formation of silicon oxide |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (en) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
| KR20210050453A (en) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (en) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697B (en) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | Substrate processing apparatus |
| CN112885692B (en) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | Substrate processing apparatus |
| CN120432376A (en) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
| JP7527928B2 (en) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | Substrate processing apparatus and substrate processing method |
| KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR20210078405A (en) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
| KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
| JP7636892B2 (en) | 2020-01-06 | 2025-02-27 | エーエスエム・アイピー・ホールディング・ベー・フェー | Channeled Lift Pins |
| JP7730637B2 (en) | 2020-01-06 | 2025-08-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | Gas delivery assembly, components thereof, and reactor system including same |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR20210093163A (en) | 2020-01-16 | 2021-07-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming high aspect ratio features |
| KR102675856B1 (en) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
| TWI889744B (en) | 2020-01-29 | 2025-07-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Contaminant trap system, and baffle plate stack |
| TW202513845A (en) | 2020-02-03 | 2025-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Semiconductor structures and methods for forming the same |
| KR20210100010A (en) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for transmittance measurements of large articles |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103956A (en) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus including light receiving device and calibration method of light receiving device |
| TW202146691A (en) | 2020-02-13 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Gas distribution assembly, shower plate assembly, and method of adjusting conductance of gas to reaction chamber |
| TWI855223B (en) | 2020-02-17 | 2024-09-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for growing phosphorous-doped silicon layer |
| CN113410160A (en) | 2020-02-28 | 2021-09-17 | Asm Ip私人控股有限公司 | System specially used for cleaning parts |
| KR20210113043A (en) | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | Alignment fixture for a reactor system |
| KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
| US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
| KR102775390B1 (en) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (en) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
| TWI887376B (en) | 2020-04-03 | 2025-06-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for manufacturing semiconductor device |
| TWI888525B (en) | 2020-04-08 | 2025-07-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
| KR20210127620A (en) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | method of forming a nitrogen-containing carbon film and system for performing the method |
| KR20210128343A (en) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming chromium nitride layer and structure including the chromium nitride layer |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| KR20210130646A (en) | 2020-04-21 | 2021-11-01 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
| KR20210132612A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and apparatus for stabilizing vanadium compounds |
| CN113555279A (en) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | Methods of forming vanadium nitride-containing layers and structures comprising the same |
| KR102866804B1 (en) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
| TW202208671A (en) | 2020-04-24 | 2022-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Methods of forming structures including vanadium boride and vanadium phosphide layers |
| KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
| KR102783898B1 (en) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
| KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
| KR20210137395A (en) | 2020-05-07 | 2021-11-17 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals |
| KR102788543B1 (en) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
| TW202146699A (en) | 2020-05-15 | 2021-12-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming a silicon germanium layer, semiconductor structure, semiconductor device, method of forming a deposition layer, and deposition system |
| KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
| KR102795476B1 (en) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
| KR20210145079A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Flange and apparatus for processing substrates |
| TWI873343B (en) | 2020-05-22 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Reaction system for forming thin film on substrate |
| KR20210146802A (en) | 2020-05-26 | 2021-12-06 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing boron and gallium containing silicon germanium layers |
| TWI876048B (en) | 2020-05-29 | 2025-03-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing device |
| TW202212620A (en) | 2020-06-02 | 2022-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Apparatus for processing substrate, method of forming film, and method of controlling apparatus for processing substrate |
| TW202208659A (en) | 2020-06-16 | 2022-03-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for depositing boron containing silicon germanium layers |
| TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for forming a layer provided with silicon |
| TWI873359B (en) | 2020-06-30 | 2025-02-21 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing method |
| US12431354B2 (en) | 2020-07-01 | 2025-09-30 | Asm Ip Holding B.V. | Silicon nitride and silicon oxide deposition methods using fluorine inhibitor |
| TW202202649A (en) | 2020-07-08 | 2022-01-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Substrate processing method |
| KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
| KR20220011092A (en) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Method and system for forming structures including transition metal layers |
| TWI878570B (en) | 2020-07-20 | 2025-04-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method and system for depositing molybdenum layers |
| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
| KR20220021863A (en) | 2020-08-14 | 2022-02-22 | 에이에스엠 아이피 홀딩 비.브이. | Method for processing a substrate |
| TW202228863A (en) | 2020-08-25 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for cleaning a substrate, method for selectively depositing, and reaction system |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| TW202229601A (en) | 2020-08-27 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of forming patterned structures, method of manipulating mechanical property, device structure, and substrate processing system |
| TW202217045A (en) | 2020-09-10 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Methods for depositing gap filing fluids and related systems and devices |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| KR20220036866A (en) | 2020-09-16 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | Silicon oxide deposition method |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| TWI889903B (en) | 2020-09-25 | 2025-07-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Semiconductor processing method |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (en) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | Deposition method and an apparatus for depositing a silicon-containing material |
| CN114293174A (en) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | Gas supply unit and substrate processing apparatus including the same |
| TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of depositing material on stepped structure |
| TW202232565A (en) | 2020-10-15 | 2022-08-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of manufacturing semiconductor device, and substrate treatment apparatus using ether-cat |
| TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
| TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
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| TW202229795A (en) | 2020-11-23 | 2022-08-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | A substrate processing apparatus with an injector |
| TW202235649A (en) | 2020-11-24 | 2022-09-16 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | Methods for filling a gap and related systems and devices |
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| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
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| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| CN113862645B (en)* | 2021-09-28 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor process chamber |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| Publication number | Publication date |
|---|---|
| JPS5979545A (en) | 1984-05-08 |
| Publication | Publication Date | Title |
|---|---|---|
| JPH0351101B2 (en) | ||
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