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JPH03174972A - Method for soldering substrate - Google Patents

Method for soldering substrate

Info

Publication number
JPH03174972A
JPH03174972AJP1314808AJP31480889AJPH03174972AJP H03174972 AJPH03174972 AJP H03174972AJP 1314808 AJP1314808 AJP 1314808AJP 31480889 AJP31480889 AJP 31480889AJP H03174972 AJPH03174972 AJP H03174972A
Authority
JP
Japan
Prior art keywords
substrate
casing
vacuum pump
impurities
conveyor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1314808A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Wada
義之 和田
Toshio Nishi
西 壽雄
Seiji Sakami
省二 酒見
Tadahiko Sakai
忠彦 境
Masanao Kono
河野 政直
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harima Chemicals Inc
Panasonic Holdings Corp
Original Assignee
Harima Chemicals Inc
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harima Chemicals Inc, Matsushita Electric Industrial Co LtdfiledCriticalHarima Chemicals Inc
Priority to JP1314808ApriorityCriticalpatent/JPH03174972A/en
Publication of JPH03174972ApublicationCriticalpatent/JPH03174972A/en
Pendinglegal-statusCriticalCurrent

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Classifications

Landscapes

Abstract

PURPOSE:To improve the wettability of a substrate and to attach soldering material to the substrate by removing the impurities on the surface of the substrate through a plasma generating means, then, coating the surface of the base plate with soldering material. CONSTITUTION:When many substrates 20 are mounted by a conveyor 17 on a placing part 10, the placing part 10 advances into a casting 1 and a cover member 11 blocks an opening part 2. Then, a vacuum pump operates to reduce the pressure in the casing 1 to supply gaseous Ar into the casing 1 and a high frequency alternating voltage is applied to generate plasma in the casing 1. At this time, a portion of gaseous Ar is ionized, the air in the casing 1 moves violently at high speed, impurities such as oxide film, grease generated on and attached to the surface of the substrate 2a are removed and sucked by the vacuum pump. Then, the valve of the vacuum pump is closed and a valve 7 is opened to return the pressure in the casing 1 to the normal pressure. Then, the mounting part 10 is sent pitch by pitch in a reverse direction to be drawn from the casing 1 and a delivering means delivers the substrate 20 to a conveyor 18 and transfers it to the next stage.

Description

Translated fromJapanese

【発明の詳細な説明】(産業上の利用分野)本発明は基板の半田付方法に関し、半田のヌレ性を改善
するために、プラズマにより基板表面の不純物を除去し
た後、この基板に半田材料を付着させるようにしたもの
である。
Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for soldering a substrate, and in order to improve solder wetting properties, impurities on the surface of the substrate are removed using plasma, and then solder material is applied to the substrate. It is designed to attach.

(従来の技術)電子部品が実装される基板の表面には、酸化膜が生じや
すく、また基板を取り扱う作業者の指先の脂などが付着
しやすいものである。このような酸化膜や脂などの不純
物が基板の表面に1戒、付着していると、半田のヌレ性
が低下しやすい。
(Prior Art) An oxide film tends to form on the surface of a substrate on which electronic components are mounted, and oil from the fingertips of a worker who handles the substrate tends to adhere to the surface. If such impurities such as oxide films and fats adhere to the surface of the substrate, solder wettability tends to deteriorate.

このため、基板にクリーム半田やフラックス等の半田材
料を付着させるに先立ち、基板を希硝酸水溶液中に浸漬
して、表面の酸化膜や脂などを除去する手段が知られて
いる。
For this reason, a known method is to immerse the substrate in a dilute nitric acid aqueous solution to remove the oxide film, fat, etc. on the surface before attaching a solder material such as cream solder or flux to the substrate.

(発明が解決しようとする課題)しかしながら上記従来手段は、基板を希硝酸水溶液から
取り出した後、水やアルコール液により洗浄して酸を除
去し、更にその後、基板を乾燥させねばならないため、
作業工程が多く、しかも湿式であるので作業性が悪いも
のであり、また希硝酸は皮フを侵しやすいため、取り扱
いには十分な注意を要する等の問題があった。したがっ
て従来、上記希硝酸水溶液による基板のクリーニングは
実際にはあまり行われておらず、一般には、何等クリー
ニングを行うことなく、上記酸化膜や脂等の不純物が生
成、付着した基板にそのまま半田材料を付着させている
実情にあった。したがって半田のヌレ性が悪く、その結
果、電子部品を基板に正常に接着しにくく、半田ブリッ
ジを生じやすい等の問題があった。
(Problems to be Solved by the Invention) However, in the above conventional means, after the substrate is removed from the dilute nitric acid aqueous solution, the acid must be removed by washing with water or alcohol, and then the substrate must be dried.
There are many working steps, and since it is a wet process, it is difficult to work with, and dilute nitric acid tends to attack the skin, so it requires great care when handling. Therefore, in the past, cleaning of the board with the dilute nitric acid aqueous solution has not been carried out much in practice, and in general, the solder material is directly applied to the board on which impurities such as the oxide film and fat have been formed and adhered, without any cleaning. The actual situation was that it was attached. Therefore, the wetting properties of the solder are poor, and as a result, there are problems such as difficulty in properly adhering the electronic component to the board, and a tendency to cause solder bridges.

また半田材料には、ヌレ性を改善するために、塩素など
のハロゲン系活性剤(フラックス)が混合された水溶液
抵抗が10万Ωcm以下のものと、これが混合されてい
ない水溶液抵抗が10万Ωcm以上のヌレ性の悪いもの
があるが、上記のようにクリーニングを行わない基板に
は、ヌレ性を確保するために、ハロゲン系活性剤が混合
された上記抵抗が10万ΩcI11以下の半田材料が多
用される傾向にある。しかしながらこのようなハロゲン
系活性剤が混合された半田は、リフロー後に、有害物質
として知られるフロンや塩素系有機溶剤により洗浄せね
ばならず、単に作業工程が増加して手間がかかるだけで
なく、環境衛生上好ましくないものであった。
In addition, in order to improve wetting properties, some solder materials have an aqueous solution resistance of 100,000 Ωcm or less, which is mixed with a halogen-based activator (flux) such as chlorine, and an aqueous solution with a resistance of 100,000 Ωcm or less without this mixture. There are the above-mentioned materials with poor wetting properties, but in order to ensure the wetting properties of the substrates that are not cleaned as described above, the above-mentioned solder material with a resistance of 100,000 ΩcI11 or less mixed with a halogen-based activator is used. It tends to be used frequently. However, solder mixed with such a halogen-based activator must be cleaned with chlorofluorocarbons and chlorinated organic solvents, which are known to be harmful substances, after reflow, which not only increases the number of work steps and is time-consuming; It was unfavorable in terms of environmental hygiene.

そこで本発明は、基板表面に付着、生成する不純物を簡
単に除去して、ヌレ性よく半田材料を付着させることが
できる手段を提供することを目的とする。
SUMMARY OF THE INVENTION Therefore, it is an object of the present invention to provide a means for easily removing impurities that adhere to and generate on a substrate surface and allowing solder material to adhere with good wettability.

(課題を解決するための手段)このために本発明は、プラズマ発生手段により、基板表
面の不純物を除去した後、この基板の表面に半田付材料
を塗布するようにしている。
(Means for Solving the Problems) For this purpose, the present invention applies a soldering material to the surface of the substrate after removing impurities from the surface of the substrate using plasma generating means.

(作用)上記構成において、基板表面にプラズマを衝突させて、
その表面の不純物を除去し、ヌレ性を改善したうえで、
半田材料を付着させる。
(Function) In the above configuration, by colliding plasma with the substrate surface,
After removing impurities on the surface and improving wettability,
Apply solder material.

(実施例)次に、図面を参照しながら本発明の詳細な説明する。(Example)Next, the present invention will be described in detail with reference to the drawings.

第1図は基板のプラズマクリーニング装置の平面図、第
2図は側面図、第3図は断面図である。lは円筒形のガ
ラス製ケーシングであり、その前端面には開口部2が開
口されている。このケーシング1の周面には、プラズマ
発生手段を構成するアルミ板製の電極部3が配設されて
いる。4はこの電極部3に高周波交流電圧を印加する電
源である。ケーシング1の上部にはパイプ5が接続され
ており、このパイプ5からケーシング1内に、プラズマ
放電用ガスとして、Arガスのような不活性ガスが供給
される。またケーシング1の下部には、ケーシング1内
のガスを吸引するロータリー真空ポンプ6が連結されて
おり、またその後端面にはパルプ7が接続されている。
FIG. 1 is a plan view of a plasma cleaning apparatus for a substrate, FIG. 2 is a side view, and FIG. 3 is a sectional view. 1 is a cylindrical glass casing, and an opening 2 is opened in the front end surface of the casing. On the circumferential surface of the casing 1, an electrode portion 3 made of an aluminum plate and constituting a plasma generating means is disposed. Reference numeral 4 denotes a power source that applies a high frequency AC voltage to this electrode section 3. A pipe 5 is connected to the upper part of the casing 1, and an inert gas such as Ar gas is supplied as a plasma discharge gas into the casing 1 from the pipe 5. Further, a rotary vacuum pump 6 for sucking gas inside the casing 1 is connected to the lower part of the casing 1, and a pulp 7 is connected to the rear end surface.

9は真空ポンプ6のバルブである。9 is a valve of the vacuum pump 6.

10は上記開口部2の前部に配設されたアルミ板から成
るf22内であって、その後部には開口部2の蓋部材1
1が装着されている。蓋部材11は、ナンド部12に立
設されたブラケット14に支持されている。13はこの
ナツト部12が螺合する送りねじ、15はその駆動用モ
ータであり、モータ15が駆動すると、ナツト部12は
送りねじ13に沿ってY方向に移動し、載置部10は開
口部2からケーシング1の内部に出入する。また蓋部材
11は載置部10と一体的に移動し、開口部2を開閉す
る。すなわち上記ナツト部12と送りねじ13は、載置
部10をY方向に往復移動させる移動手段と、蓋部材1
1により開口部2を開閉する手段を構成している。
10 is inside f22 made of an aluminum plate disposed in the front part of the opening 2, and the cover member 1 of the opening 2 is located in the rear part.
1 is installed. The lid member 11 is supported by a bracket 14 erected on the NAND portion 12. 13 is a feed screw into which this nut portion 12 is screwed, and 15 is a driving motor thereof. When the motor 15 is driven, the nut portion 12 moves in the Y direction along the feed screw 13, and the mounting portion 10 is opened. The part 2 enters and exits the inside of the casing 1. Further, the lid member 11 moves integrally with the mounting section 10 to open and close the opening 2. That is, the nut portion 12 and the feed screw 13 serve as a moving means for reciprocating the mounting portion 10 in the Y direction, and a moving means for reciprocating the mounting portion 10 in the Y direction, and a moving means for reciprocating the mounting portion 10 in the Y direction.
1 constitutes means for opening and closing the opening 2.

17.18は、!11内10を挟んで、この載置部10
と交差する方向に配設されたコンベヤであって、基板2
0を上記載置部10の移動方向であるY方向と交差する
X方向に搬送する。
17.18 is! This mounting section 10 is sandwiched between 10 in 11.
A conveyor disposed in a direction intersecting with the board 2
0 in the X direction that intersects with the Y direction, which is the moving direction of the placement section 10.

19は基板20を停止させるストッパーである。A stopper 19 stops the substrate 20.

21は基板20の受は渡し手段であって、コンベヤ17
と載置部10の間、及び載置部lOとコンベヤ18の間
をX方向に往復動し、基板20を吸着パッド22に吸着
して受は渡しする。
21 is a conveyor 17 for receiving and transferring the substrate 20;
The substrate 20 is reciprocated in the X direction between the receiver 10 and the receiver 10, and between the receiver 10 and the conveyor 18, and the substrate 20 is attracted to the suction pad 22 and transferred.

基板20はセラミック、ガラス、ガラスエポキシなどに
より形成されており、またその表面には、銀パラジウム
、金1w4箔などにより、電極部が形成されている。
The substrate 20 is made of ceramic, glass, glass epoxy, or the like, and electrode portions are formed on its surface using silver-palladium, gold 1w4 foil, or the like.

このプラズマクリーング装置は上記のような構成より成
り、次に動作の説明を行う。
This plasma cleaning apparatus has the above-mentioned configuration, and its operation will be explained next.

コンベヤ17により搬送されてきた基板20は、ストッ
パー19に当って停止する。そこで受は渡し手段21は
この基板20を吸着してティクアップし、載置部10に
移載する。このとき載置部lOは、モータ15が駆動す
ることにより、ケーシングlへ向ってピンチ送りされて
おり、このピッチ送りに同期して、受は渡し手段21が
コンベヤ17と載置部10の間を往復して基板20を載
置部lOに移載することにより、基板20は載置部10
に1枚づつ順に整列して搭載される。
The substrate 20 conveyed by the conveyor 17 hits the stopper 19 and stops. Then, the receiving and transferring means 21 picks up the substrate 20 by suction, and transfers it to the mounting section 10. At this time, the placing part lO is pinch fed toward the casing l by the drive of the motor 15, and in synchronization with this pitch feeding, the transfer means 21 is moved between the conveyor 17 and the placing part 10. By reciprocating and transferring the substrate 20 to the mounting section 10, the substrate 20 is transferred to the mounting section 10.
They are lined up and loaded one by one.

このようにして多数枚の基板20が搭載されると、載置
部lOはケーシングl内に完全に進入し、蓋部材11は
開口部2を閉塞する(第1図鎖線参照)。次いで真空ポ
ンプ6が作動し、ケーシング1内は減圧されるとともに
、ケーシングl内にArガスが供給され、次いで電極部
3に高周波交流電圧が印加されることにより、ケーシン
グ1の内部にプラズマが発生する。この時、Arガスの
一部はイオン化し、Arガス分子や、イオン化したAr
+、マイナス電子はケーシング1内を激しく高速運動し
、基板200表面に衝突して、この表面に生成、付着す
る酸化膜や脂などの不純物を除去し、除去された不純物
は真空ポンプ6に吸引される。
When a large number of substrates 20 are mounted in this manner, the mounting portion 10 completely enters into the casing 1, and the lid member 11 closes the opening 2 (see the chain line in FIG. 1). Next, the vacuum pump 6 is activated, the pressure inside the casing 1 is reduced, Ar gas is supplied into the casing 1, and then a high frequency AC voltage is applied to the electrode section 3, thereby generating plasma inside the casing 1. do. At this time, a part of the Ar gas is ionized and becomes Ar gas molecules and ionized Ar gas.
The positive and negative electrons move violently at high speed within the casing 1, collide with the surface of the substrate 200, and remove impurities such as oxide films and fat that are generated and attached to this surface, and the removed impurities are sucked into the vacuum pump 6. be done.

このようにして不純物を除去したならば、真空ポンプ6
のパルプ9を閉じるとともに、パルプ7を開いてケーシ
ング1内を常圧にもどす。
After removing impurities in this way, the vacuum pump 6
The pulp 9 is closed and the pulp 7 is opened to return the inside of the casing 1 to normal pressure.

次いで載置部lOを先程と逆方向にピッチ送りしてケー
シング1から引き出す。このとき、このピンチ送りに同
期して、受は渡し手段21は載置部10とコンベヤ18
の間を往復し、基板20をコンベヤI8に受は渡し、次
の工程へ搬送する。
Next, the mounting portion 1O is pitch-fed in the opposite direction to the previous direction and pulled out from the casing 1. At this time, in synchronization with this pinch feeding, the receiving and passing means 21 transfers the receiving portion 10 and the conveyor 18.
The substrate 20 is transferred to the conveyor I8 and transported to the next process.

以上のように本手段は、載置部10をY方向にピッチ送
りしてケーシング1内に出し入れしながら、基板20の
載置部10への移載やこれからの取り卸しを行うように
しているので、作業性がきわめて良く、しかも載置部1
0の出し入れとともに、蓋部材11により開口部2を開
閉できるので、運転管理も簡単等の利点を有する。
As described above, the present means transfers the substrate 20 to the platform 10 and unloads it from there by pitch-feeding the platform 10 in the Y direction and taking it in and out of the casing 1. Therefore, the workability is extremely good, and the mounting part 1
Since the opening 2 can be opened and closed by the cover member 11 while taking in and out the 0, there are advantages such as easy operation management.

第5図は、上記のようにしてプラズマクリーニングされ
た基板20に、スクリーン印刷装置によりクリーム半田
30を塗布している様子を示すものであって、31はス
クリーンマスク、32はスキージである。また33は基
(反20の上面に銅箔などにより形成された電極部であ
り、この電極部33上にクリーム半田30を塗布し、次
いでマウンター(図外)により、このクリーム半田30
上に電子部品を搭載する。
FIG. 5 shows how cream solder 30 is applied to the substrate 20 plasma-cleaned as described above using a screen printing device, and 31 is a screen mask and 32 is a squeegee. Reference numeral 33 denotes an electrode portion formed of copper foil or the like on the upper surface of the base 20. Cream solder 30 is applied onto this electrode portion 33, and then the cream solder 30 is applied with a mounter (not shown).
Electronic components are mounted on top.

基板20は、その表面の不純物が除去されており、した
がって電子部品を搭載した後、この基板20をリフロー
装置へ送ってクリーム半田30を加熱処理すると、クリ
ーム半田はヌレ性よく溶融固化する。
Impurities on the surface of the board 20 have been removed, so when the board 20 is loaded with electronic components and sent to a reflow machine to heat-process the cream solder 30, the cream solder melts and solidifies with good wettability.

この場合、ヌレ性の改善のためにハロゲン系活性剤が混
合されたクリーム半田だけでなく、ハロゲン系活性剤が
混合されていない水溶液抵抗が10万Ωcm以上のそれ
自身ヌレ性の悪いクリーム半田であっても、ヌレ性よく
溶融固化させて、電子部品を基板20に良好に接着でき
る。
In this case, not only cream solder mixed with a halogen-based activator to improve wetting properties, but also cream solder with an aqueous solution resistance of 100,000 Ωcm or more without a halogen-based activator, which itself has poor wetting properties, is used. Even if there is, it can be melted and solidified with good wettability and the electronic component can be bonded to the substrate 20 well.

なお第5図は、表面実装の場合のクリーム半田の塗布手
段を示すものであるが、本発明は、インサート方式の電
子部品実装にも適用できるものであり、この場合、上記
のようにしてプラズマクリーニングされた基板20の表
面にフラックスを塗布し、次いでディッピングにより、
電子部品のリードが挿入されるスルーホール付近に半田
を付着させればよい。勿論この場合も、水溶液抵抗が1
0万Ωc11以上のフラックスであっても、基板20に
ヌレ性よく付着させることができる。
Although FIG. 5 shows a means for applying cream solder in the case of surface mounting, the present invention can also be applied to insert-type electronic component mounting, and in this case, plasma solder is applied as described above. Flux is applied to the surface of the cleaned substrate 20, and then by dipping,
Solder may be applied near the through-hole into which the lead of the electronic component is inserted. Of course, in this case as well, the aqueous solution resistance is 1
Even if the flux is 00,000Ωc11 or more, it can be adhered to the substrate 20 with good wettability.

(発明の効果)以上説明したように本発明は、プラズマ発生手段により
、基板表面の不純物を除去した後、この基板の表面に半
田付材料を塗布するようにしているので、基板のヌレ性
は改善され、ヌレ性の良い半田材料だけでなく、ヌレ性
の悪い半田材料であっても、良好に基板に付着させるこ
とができる。
(Effects of the Invention) As explained above, in the present invention, the soldering material is applied to the surface of the substrate after impurities on the surface of the substrate are removed by the plasma generation means, so that the wetting property of the substrate is reduced. Not only solder materials with improved wetting properties but also solder materials with poor wetting properties can be successfully attached to the substrate.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の実施例を示すものであって、第1図はプラ
ズマクリーニング装置の平面図、第2図は側面図、第3
図は断面図、第4図は移載中の側面図、第5図はスクリ
ーン印刷装置の側面図である。3.4・・・プラズマ発生手段20・・・基板
The figures show an embodiment of the present invention, in which Fig. 1 is a plan view of a plasma cleaning device, Fig. 2 is a side view, and Fig. 3 is a plan view of a plasma cleaning device.
The figure is a sectional view, FIG. 4 is a side view during transfer, and FIG. 5 is a side view of the screen printing apparatus. 3.4...Plasma generation means 20...Substrate

Claims (2)

Translated fromJapanese
【特許請求の範囲】[Claims](1)プラズマ発生手段により、基板表面の不純物を除
去した後、この基板の表面に半田付材料を塗布すること
を特徴とする基板の半田付方法。
(1) A method for soldering a substrate, which comprises removing impurities from the surface of the substrate using a plasma generating means, and then applying a soldering material to the surface of the substrate.
(2)上記半田付材料が、水溶液抵抗が10万Ωcm以
上のクリーム半田又はフラックスであることを特徴とす
る上記特許請求の範囲第1項に記載の基板の半田付方法
(2) The method for soldering a board according to claim 1, wherein the soldering material is cream solder or flux having an aqueous resistance of 100,000 Ωcm or more.
JP1314808A1989-12-041989-12-04Method for soldering substratePendingJPH03174972A (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP1314808AJPH03174972A (en)1989-12-041989-12-04Method for soldering substrate

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP1314808AJPH03174972A (en)1989-12-041989-12-04Method for soldering substrate

Publications (1)

Publication NumberPublication Date
JPH03174972Atrue JPH03174972A (en)1991-07-30

Family

ID=18057850

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP1314808APendingJPH03174972A (en)1989-12-041989-12-04Method for soldering substrate

Country Status (1)

CountryLink
JP (1)JPH03174972A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH06246478A (en)*1993-03-021994-09-06Techno Oote:KkBrazing device and brazing method by ion washing
JPH06268359A (en)*1993-03-111994-09-22Nippon Dennetsu Keiki KkSoldering method
WO1994022628A1 (en)*1993-04-051994-10-13Seiko Epson CorporationCombining method and apparatus using solder
WO1995015832A1 (en)*1993-12-091995-06-15Seiko Epson CorporationCombining method and apparatus using solder
US5753886A (en)*1995-02-071998-05-19Seiko Epson CorporationPlasma treatment apparatus and method
US5835996A (en)*1995-12-181998-11-10Seiko Epscon CorporationPower generation method and power generator using a piezoelectric element, and electronic device using the power
US5918354A (en)*1996-04-021999-07-06Seiko Epson CorporationMethod of making a piezoelectric element
US6004631A (en)*1995-02-071999-12-21Seiko Epson CorporationApparatus and method of removing unnecessary matter and coating process using such method
US6051150A (en)*1995-08-072000-04-18Seiko Epson CorporationPlasma etching method and method of manufacturing liquid crystal display panel
US6086710A (en)*1995-04-072000-07-11Seiko Epson CorporationSurface treatment apparatus
US6332567B1 (en)1996-03-182001-12-25Seiko Epson CorporationPiezoelectric element, manufacturing method thereof, and mounting apparatus of piezoelectric resonators
US6342275B1 (en)1993-12-242002-01-29Seiko Epson CorporationMethod and apparatus for atmospheric pressure plasma surface treatment, method of manufacturing semiconductor device, and method of manufacturing ink jet printing head
JP2008192964A (en)*2007-02-072008-08-21Denso CorpMounting method of semiconductor chip
JP2013247124A (en)*2012-05-232013-12-09Panasonic CorpMounting device and mounting method for semiconductor element
JP2014195810A (en)*2013-03-292014-10-16昭和電工株式会社Brazing method and brazing device
JP2025501512A (en)*2022-09-132025-01-22雲南中宣液態金属科技有限公司 Liquid metal-based cleaning method and integrated cleaning and application device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
JPH06246478A (en)*1993-03-021994-09-06Techno Oote:KkBrazing device and brazing method by ion washing
JPH06268359A (en)*1993-03-111994-09-22Nippon Dennetsu Keiki KkSoldering method
US6158648A (en)*1993-04-052000-12-12Seiko Epson CorporationMethod and apparatus for bonding using brazing material
WO1994022628A1 (en)*1993-04-051994-10-13Seiko Epson CorporationCombining method and apparatus using solder
US5735451A (en)*1993-04-051998-04-07Seiko Epson CorporationMethod and apparatus for bonding using brazing material
US5831238A (en)*1993-12-091998-11-03Seiko Epson CorporationMethod and apparatus for bonding using brazing material at approximately atmospheric pressure
WO1995015832A1 (en)*1993-12-091995-06-15Seiko Epson CorporationCombining method and apparatus using solder
US6342275B1 (en)1993-12-242002-01-29Seiko Epson CorporationMethod and apparatus for atmospheric pressure plasma surface treatment, method of manufacturing semiconductor device, and method of manufacturing ink jet printing head
US5753886A (en)*1995-02-071998-05-19Seiko Epson CorporationPlasma treatment apparatus and method
US6004631A (en)*1995-02-071999-12-21Seiko Epson CorporationApparatus and method of removing unnecessary matter and coating process using such method
US6086710A (en)*1995-04-072000-07-11Seiko Epson CorporationSurface treatment apparatus
US6051150A (en)*1995-08-072000-04-18Seiko Epson CorporationPlasma etching method and method of manufacturing liquid crystal display panel
US5835996A (en)*1995-12-181998-11-10Seiko Epscon CorporationPower generation method and power generator using a piezoelectric element, and electronic device using the power
US6332567B1 (en)1996-03-182001-12-25Seiko Epson CorporationPiezoelectric element, manufacturing method thereof, and mounting apparatus of piezoelectric resonators
US5918354A (en)*1996-04-021999-07-06Seiko Epson CorporationMethod of making a piezoelectric element
JP2008192964A (en)*2007-02-072008-08-21Denso CorpMounting method of semiconductor chip
JP2013247124A (en)*2012-05-232013-12-09Panasonic CorpMounting device and mounting method for semiconductor element
JP2014195810A (en)*2013-03-292014-10-16昭和電工株式会社Brazing method and brazing device
JP2025501512A (en)*2022-09-132025-01-22雲南中宣液態金属科技有限公司 Liquid metal-based cleaning method and integrated cleaning and application device

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