【発明の詳細な説明】〔｛既 要〕気相エビタキシャル成長装置に関し、反応管の内壁にエビタキシャル或長用ガスの成分が付着
するのを防止するために設けた保温用具により保温され
た反応管の内壁の温度が、高周波誘導コイルに通電する
電流によって変動しないような気相エビタキシャル威長
装置を目的とし、サセプタ上にｉｊ２置したエビタキシ
ャル或長用基板を挿入する反応管と、該反応管の周囲に設けられ、前記サセブタに高周波電流
を誘導させて該サセプタを加熱することでエビタキシャ
ル成長用基板を加熱する高周波誘導コイルとから成り、該反応管内に導入されるエビタキシャル或長用ガスを分
解して基板に被着する装置であって、前記反応管の外壁
と高周波誘導コイルとの間に高周波誘導を受けない保温
用具を配置して構戒する。[Detailed Description of the Invention] [{Already Required]] Regarding a vapor phase epitaxial growth apparatus, the temperature is kept by a heat insulating tool provided to prevent the components of the epitaxial growth gas from adhering to the inner wall of the reaction tube. A reaction tube into which an epitaxial growth substrate placed on a susceptor is inserted, for the purpose of a gas-phase epitaxial growth device in which the temperature of the inner wall of the reaction tube does not change due to the current flowing through a high-frequency induction coil; A high-frequency induction coil is provided around the reaction tube and heats the substrate for epitaxial growth by inducing a high-frequency current in the susceptor and heating the susceptor. This is an apparatus for decomposing a long gas and depositing it on a substrate, and a heat-retaining device that does not receive high-frequency induction is placed between the outer wall of the reaction tube and the high-frequency induction coil.
本発明は気相エビタキシャル成長装置に関する。The present invention relates to a vapor phase epitaxial growth apparatus.
赤外線検知素子形或材料として、エネルギーバンドギャ
ンプの狭い水銀・カドミウム・テルル（１１ｇ＋−ｘ
Ｃｄ）Ｉ Ｔｅ）の結晶が用いられている。Mercury, cadmium, tellurium (11g+-x
Cd) I Te) crystals are used.
このようなＩＩｇ＋−＋＋ Ｃｄｘ Ｔｅの結晶を素子
形戒に都合が良いように、大面積で薄層状態に形威する
ために気相エピタキシャル成長装置が用いられている。A vapor phase epitaxial growth apparatus is used to form such a crystal of IIg+-++CdxTe into a thin layer over a large area so as to be convenient for device formation.
従来の気相エビタキシャル成長装置は、第４図に示すよ
うに、石英ガラスで形威された反応管ｌの内部にカーボ
ンより戒るサセプタ２にＲ置された例えばカドミウムテ
ルル（ＣｄＴｃ）より戒るエビタキシャル威長用基板３
が挿入され、該反応管１内が排気された後、水素ガス供
給管４より水銀を収容した蒸発器５や、ジメチルカドミ
ウムを収容した蒸発器６や、ジエチルテルルを収容した
華発器７内に水素ガスを導入し、該水素ガスに前記水銀
や、ジメチルカドくウムや、ジエチルテルルを担持させ
たエビタキシャル成長用ガスをガス導入管８を通して反
応管ｌ内に導く。As shown in FIG. 4, the conventional vapor phase epitaxial growth apparatus uses, for example, cadmium tellurium (CdTc), which is placed in a susceptor 2, which is made of carbon, inside a reaction tube made of quartz glass. Ebitaxial length substrate 3
is inserted, and after the inside of the reaction tube 1 is evacuated, the inside of the evaporator 5 containing mercury from the hydrogen gas supply pipe 4, the evaporator 6 containing dimethyl cadmium, and the evaporator 7 containing diethyl tellurium is Hydrogen gas is introduced into the reaction tube 1, and an epitaxial growth gas in which the hydrogen gas supports the mercury, dimethyl cadmium, or diethyl tellurium is introduced into the reaction tube 1 through the gas introduction tube 8.
そして反応管の周囲に設けた高周波誘導コイル９に通電
して、前記ザセプタ２を加熱することでエビタキシャル
或長用基板３を加熱し、該反応管内に導入されたエピク
ヰシ＋ル威長用ガスを加熱分解して基板上にＨｇ＋−．
ｃｄ，ＩＴｅのエビタキシャル粘品をエビタキシャル
成長している。Then, the high frequency induction coil 9 provided around the reaction tube is energized to heat the Zaceptor 2, thereby heating the epitaxial lengthening substrate 3, and the epitaxy lengthening gas introduced into the reaction tube. Hg+-. is deposited on the substrate by thermal decomposition.
Ebitaxial growth of cd, ITe is carried out.
なお、１２は排気管でフランジｌ３を介してエピタキシ
ャル成長後の廃棄ガスを反応管の外部へ排気している。Note that 12 is an exhaust pipe that exhausts waste gas after epitaxial growth to the outside of the reaction tube via a flange 13.
ところで、上記エピタキシャル成長用ガスの内の水銀ガ
スの飽和薫気圧温度は１８０℃程度と低いために、反応
管の内壁に水銀ガスが凝固して付着する問題があり、そ
のためエビタキシャル戊長用ガスが所定の威分を維持し
た状態でエビタキシャル成長用基板に供給されず、組成
の安定したｌＩｇ＋−ｘＣｄ． Ｔｅのエビタキシャル
結晶が得られない問題がある。By the way, the saturated smoke pressure temperature of the mercury gas among the epitaxial growth gases mentioned above is as low as about 180°C, so there is a problem that the mercury gas solidifies and adheres to the inner wall of the reaction tube. The lIg+-xCd. There is a problem that an epitaxial crystal of Te cannot be obtained.
この問題を解法ずるために、従来の気相エビタキシャル
成長装置に於いては、高周波誘導コイル９と反応管１の
間に、反応管の内壁を加熱するヒータ１０を設け、該ヒ
ータに高周波誘導コイルに通電する高周波電源とは別個
にヒータ電源１ｌを設け、該ヒータ電源を用いてヒータ
にｉＩ１電することでヒータを加熱し、反応管の内壁の
温度を所定の温度に保ち、水銀が反応管の内壁に付着し
ないようにしている。In order to solve this problem, in the conventional vapor phase epitaxial growth apparatus, a heater 10 that heats the inner wall of the reaction tube is provided between the high frequency induction coil 9 and the reaction tube 1, and the high frequency induction A heater power source 1l is provided separately from the high frequency power source that energizes the coil, and the heater is heated by applying electricity to the heater using the heater power source, and the temperature of the inner wall of the reaction tube is maintained at a predetermined temperature, so that the mercury reacts. This prevents it from adhering to the inner wall of the pipe.
ところで上記した従来の気相エビタキシャル威長装置で
は、この保温用のヒータ１０の材質が、高周波誘導を受
けやすい材質で形威されており、前記高周波誘導コイル
９に通電する高周波電力の誘導を受けて一定の温度に制
御されない問題がある。By the way, in the above-mentioned conventional gas-phase epitaxial heating device, the material of the heater 10 for heat retention is a material that is easily susceptible to high-frequency induction, and the high-frequency electric power applied to the high-frequency induction coil 9 is easily induced. Therefore, there is a problem that the temperature cannot be controlled to a constant level.
この反応管の内壁の温度が所定温度以上に高くなると、
反応管内に導入されてきたジエチルテルルガスやジメチ
ルカドミウムガス等のエビタキシャル或長用ガスが、エ
ビタキシャル成長用基板上に到達する迄に分解して、所
定の組成のエビタキシャル結晶が基板上に形戒されない
問題がある。When the temperature of the inner wall of this reaction tube rises above a predetermined temperature,
The epitaxial growth gas such as diethyl tellurium gas or dimethyl cadmium gas introduced into the reaction tube is decomposed before reaching the epitaxial growth substrate, and an epitaxial crystal with a predetermined composition is formed on the substrate. There are problems that are not addressed formally.
本発明は上記した問題点を除去するもので、高周波誘導
コイルに通電する高周波電流によって影響を受けない保
温用具を有する気相エピタキシャル或長装置を目的とす
る。The present invention eliminates the above-mentioned problems and is directed to a vapor phase epitaxial growth apparatus having a heat retaining device that is unaffected by the high frequency current flowing through the high frequency induction coil.
上記目的を達戒する本発明の気相エビタキシャル威長装
置は、第ｌ図に示すように、反応管Ｉと高周波誘導コイ
ル９の間に高周波誘導を受けない保温用具２ｌを配置し
たことを特徴とする。更には前記保温用具２ｌの内部に
高周波誘導を受ける加熱部材を埋設し、その部材の容量
等を変動させて該保塩用具が所定の温度に制御されるよ
うにする。The gas-phase epitaxial heating device of the present invention, which achieves the above object, has a heating device 2l that is not subjected to high-frequency induction placed between the reaction tube I and the high-frequency induction coil 9, as shown in FIG. Features. Furthermore, a heating member that receives high-frequency induction is buried inside the heat-retaining tool 2l, and the capacity of the member is varied so that the temperature of the salt-retaining tool is controlled to a predetermined temperature.
〔作 用〕本発明の気相エビタキシャル威長装置は、第ｌ図より第
２図迄に示すように、高周波誘導コイル９と反応管ｌと
の間に高周波誘導を受けないアルミナのような絶縁性で
保温性の良い環状の保温用具２１を配置しており、この
保温用具は高周波誘導コイルに通電する高周波電力の影
響を受けないので、エピタキシャル或長時に該コイルに
高周波電流をｉＪＩｌ電しても、反応管の内壁の温度が
変動することは無い。[Function] As shown in FIG. 1 to FIG. 2, the gas phase epitaxial heating device of the present invention uses a material such as alumina, which is not subjected to high frequency induction, between the high frequency induction coil 9 and the reaction tube 1. An annular heat-retaining tool 21 that is insulating and has good heat retention properties is arranged, and since this heat-retaining tool is not affected by the high-frequency power that passes through the high-frequency induction coil, it is possible to apply a high-frequency current to the coil during epitaxial growth. However, the temperature of the inner wall of the reaction tube does not change.
また第３図（ａｌ、および第３［ＸＩｆｂｌに示すよう
に、前記保温用具２ｌを構成する保温管２５に鉄等の高
周波電流の誘導を受ける材料で線状加熱部材２２、或い
は環状加熱部材２３を形威し、これ等の加熱部材を前記
保温管に理設し、前記線状加熱部材の線径、或いは環状
加熱部材の板の厚さ等を適宜変化さ・仕ることで保温用
具の温度を所定の値に制御でき、それによって反応管の
内壁の温度を所定の温度に制御できる。In addition, as shown in FIGS. 3(al) and 3(XIfbl), a linear heating member 22 or an annular heating member 23 made of a material such as iron that receives high-frequency current induction is attached to the heat-retaining tube 25 constituting the heat-retaining tool 2l. By installing these heating members in the heat-retaining tube, and changing and controlling the wire diameter of the linear heating member or the thickness of the plate of the annular heating member, etc., the heat-retaining tool can be heated. The temperature can be controlled to a predetermined value, and thereby the temperature of the inner wall of the reaction tube can be controlled to a predetermined temperature.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図は本発明の気相エビタキシャル或長装置の模式図
で、第２図は本発明の保温用具の第一実施例の断面図で
ある。FIG. 1 is a schematic diagram of a vapor phase epitaxial lengthening device of the present invention, and FIG. 2 is a sectional view of a first embodiment of the heat-retaining tool of the present invention.
第１図および第２図に図示するように、本発明の装置は
、反応管１と高周波誘導コイル９との間Ｇこ環状で高周
波電流の誘導を受けないアルミナ等で形成された円筒形
状の保温用具２ｌを配置したことにある。As shown in FIGS. 1 and 2, the apparatus of the present invention has a cylindrical ring formed between a reaction tube 1 and a high-frequency induction coil 9, which is made of alumina or the like and is not susceptible to high-frequency current induction. This is due to the placement of 2 liters of heat-retaining equipment.
このようにすれば、上記保温用具は高周波電流の誘導を
受けないために、サセブタ２を加熱するために高周波誘
導コイル９に高周波電流を通電しても、その電流の影響
を受けない。加熱されたサセプタ２の輻射により反応管
ｌは加熱され、′かつ保温用具２１の材質の熱伝導率等
の物理的性質で決まる温度で、反応管の内壁が保温され
るので、内壁の温度が所定の値に保たれる。In this way, since the heat-retaining tool is not induced by high-frequency current, even if a high-frequency current is passed through the high-frequency induction coil 9 to heat the susceptor 2, it will not be affected by the current. The reaction tube l is heated by the radiation of the heated susceptor 2, and the inner wall of the reaction tube is kept warm at a temperature determined by the physical properties such as thermal conductivity of the material of the heat-insulating tool 21, so that the temperature of the inner wall increases. It is kept at a predetermined value.
なお、第１図に図示するように高周波誘導を受ｃｌない
領域に補助ヒータ２４を付設すると更に反応管の内壁に
エビタキシャル威長用ガスの戒分の付着が防止できる。As shown in FIG. 1, if an auxiliary heater 24 is provided in a region that does not receive high-frequency induction, it is possible to further prevent the adhesion of the epitaxial growth gas to the inner wall of the reaction tube.
また本発明の第２実施例として、第３図＋ａｌおよび第
３図ｆｂｌに示すように、前記環状の保温用具２ｌを構
戒する保温管２５の内部に高周波電流の誘導を受ける鉄
等の材料で形威された線状加熱部材２２、或いは環状加
熱部材２３を埋設し、この線状加熱部材の綿径、或いは
環状加熱部材の板の厚さ等を適宜変化させると、これら
の部材がコイルに通電する高周波電流の誘導を受けて加
熱され、その加熱温度が前記した綿径、或いは板厚等に
よって変化するので、これら線径、或いは板厚を適宜選
択することで所望の温度に管壁の温度が得られるように
なる。Further, as a second embodiment of the present invention, as shown in FIG. 3+al and FIG. By embedding the linear heating member 22 or the annular heating member 23 formed in the shape of The pipe wall is heated by being induced by a high-frequency current flowing through it, and the heating temperature changes depending on the aforementioned cotton diameter or plate thickness, so by appropriately selecting these wire diameters or plate thicknesses, the pipe wall can be heated to the desired temperature. temperature can be obtained.
また上記加熱部材の材質を変化させても良く、例えば鉄
線の代わりにカンタル線（商品名）、ニクロム線等を用
いても良い。Further, the material of the heating member may be changed; for example, Kanthal wire (trade name), nichrome wire, etc. may be used instead of iron wire.
このような本発明の気相エビタキシャル威長装置を用い
て、エピタキシャル成長ずる場合、エピタ：トシャル成
長ガスとしての水素ガスをキャリアガスとして６ｎ／分
の流量で反応管内に導入し、また反応管内，のガス圧を
１気圧として、前記水素ガスに亨日持されたジエチノレ
テノレノレガスを、２．４×１０−４気１ｆの分圧で、
ジメチルカドミウムガスを、５．Ｏ ＸＩＯ−５気圧の
分圧で、水銀を６ ＸＩＯ−”気圧の分圧で反応管内に
導入する。When performing epitaxial growth using the vapor phase epitaxial growth apparatus of the present invention, hydrogen gas as an epitaxial growth gas is introduced into the reaction tube as a carrier gas at a flow rate of 6 n/min. When the gas pressure of is 1 atm, the diethyl gas kept in the hydrogen gas for an hour is at a partial pressure of 2.4 x 10-4 air 1f,
Dimethyl cadmium gas, 5. Mercury is introduced into the reaction tube at a partial pressure of 6 XIO-'' atmospheres, with a partial pressure of O XIO-5 atmospheres.
そして前記サセブタを３９０℃の温度で加熱し、前記保
温用具の加熱部材の線径、或いは厚さを変化させること
で反応管の管壁の温度が１９０℃に保たれ、この成長温
度条件で気相エビクキシャル威長ずると、組戒の安定し
たエビタキシャル結晶が再現性良く得られた。Then, the susceptor is heated to a temperature of 390°C, and the temperature of the tube wall of the reaction tube is maintained at 190°C by changing the wire diameter or thickness of the heating member of the heat insulating tool. When the phase-evitaxial crystals were grown, stable epitaxial crystals of the groupings were obtained with good reproducibility.
以上述べたように、本発明の気相エビタキシャル成長装
置によれば、コイルに通電する高周波電流の影響を受け
ずに、保温用具管の温度が所定の温度に保たれるので、
反応管の管壁の温度が所定の温度に保たれるために、組
戒の安定したエビタキシャル結晶が得られる。As described above, according to the vapor phase epitaxial growth apparatus of the present invention, the temperature of the heat-retaining tool tube is maintained at a predetermined temperature without being affected by the high-frequency current flowing through the coil.
Since the temperature of the wall of the reaction tube is maintained at a predetermined temperature, stable epitaxial crystals of the structure can be obtained.
以上の説明から明らかなように本発明の気相エピタキシ
ャル威長装置によれば、反応管の管壁の温度が高周波誘
導コイルに通電する電流によって影響を受けなくなるの
で安定した温度となり、再現性の良いエビタキシャル結
晶が得られる効果がある。As is clear from the above explanation, according to the vapor phase epitaxial growth apparatus of the present invention, the temperature of the tube wall of the reaction tube is not affected by the current flowing through the high frequency induction coil, so the temperature becomes stable and the reproducibility is improved. It has the effect of obtaining good epitaxial crystals.
第１図は本発明の気相エピタキシャル成長装置の模式図
、第２図は本発明の保温用具の第１実施例の断面図、第３図（ａｌ、および第３図ｆｂ）は本発明の保温用具
の第２実施例の断面図、第４図従来の気相エピタキシャル成長装置の模式図であ
る。同において、ｌは反応管、２はサセプタ、３はエビタキシャル成長用
基板、９は高周波誘導コイル、２ｌは保温用具、２２は
線状加熱部材、２３は環状加熱部材、２４は補助ヒータ
、２５は保温管を示す。７７＋巧〉Ｏ月／ｌ汽ｌ９Ｉヒ゛クキシャル琢゛台４（
１のネ苛弐′じク第１図４ｉＥＩＦｆ，４７ 法’ｌ”ｌ？− ｔｙ＋ ’４
１ヌＴｋＯ’Ｊ ／ｌ ＃ 面Ｇ第２図（Ｑ）Ｃｂｚ不発明祠ｆ逼弔莫単Ｚ紐剖の絆面閃第３ＦｊｘＪ６１まめＡｊｇ Ｔビタキシ〒ル庇′４０ｅ置のＪ臭式
″の第 ４ 図Fig. 1 is a schematic diagram of the vapor phase epitaxial growth apparatus of the present invention, Fig. 2 is a sectional view of the first embodiment of the heat retaining tool of the present invention, and Fig. 3 (al and Fig. 3 fb) is a schematic diagram of the heat retaining tool of the present invention. FIG. 4 is a schematic diagram of a conventional vapor phase epitaxial growth apparatus. In the same, l is a reaction tube, 2 is a susceptor, 3 is an epitaxial growth substrate, 9 is a high frequency induction coil, 2l is a heat retention tool, 22 is a linear heating member, 23 is an annular heating member, 24 is an auxiliary heater, 25 indicates a heat-retaining tube. 77+Takumi〉O month/l steam l9I engine 4 (
Figure 1 4iEIFf, 47 Law'l"l?- ty+ '4
1 NuTkO'J /l # Surface G Diagram 2 (Q) Cbz Shrine of Non-Invention f 逼值值值单Z 纵绀の Bonds Surface Flash 3rd FjxJ 61 Mame Ajg T Bitaxiru Eaves '40e Place J Oshishiki'' Figure 4 of
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311791AJP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1311791AJP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
| Publication Number | Publication Date |
|---|---|
| JPH03171638Atrue JPH03171638A (en) | 1991-07-25 |
| JP2551172B2 JP2551172B2 (en) | 1996-11-06 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1311791AExpired - LifetimeJP2551172B2 (en) | 1989-11-29 | 1989-11-29 | Vapor phase epitaxial growth system |
| Country | Link |
|---|---|
| JP (1) | JP2551172B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003531489A (en)* | 2000-04-17 | 2003-10-21 | エスアール ジェイムス ジェイ メズィー | Method and apparatus for heat treating a wafer |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59171113A (en)* | 1983-03-17 | 1984-09-27 | Fuji Electric Corp Res & Dev Ltd | Semiconductor wafer heat treatment furnace |
| JPS60110116A (en)* | 1983-11-18 | 1985-06-15 | Furukawa Electric Co Ltd:The | Semiconductor thin film vapor phase growth equipment |
| JPS61229320A (en)* | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Vapor growth device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59171113A (en)* | 1983-03-17 | 1984-09-27 | Fuji Electric Corp Res & Dev Ltd | Semiconductor wafer heat treatment furnace |
| JPS60110116A (en)* | 1983-11-18 | 1985-06-15 | Furukawa Electric Co Ltd:The | Semiconductor thin film vapor phase growth equipment |
| JPS61229320A (en)* | 1985-04-03 | 1986-10-13 | Matsushita Electric Ind Co Ltd | Vapor growth device |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003531489A (en)* | 2000-04-17 | 2003-10-21 | エスアール ジェイムス ジェイ メズィー | Method and apparatus for heat treating a wafer |
| Publication number | Publication date |
|---|---|
| JP2551172B2 (en) | 1996-11-06 |
| Publication | Publication Date | Title |
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