【発明の詳細な説明】く利用分野〉本発明はレーザー等の光により、情報の記録、再生、消
去等を行なう光記録媒体に関する。更に詳細には、金属
反射層を有する光記録媒体に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Application The present invention relates to an optical recording medium on which information is recorded, reproduced, erased, etc. using light such as a laser. More specifically, the present invention relates to an optical recording medium having a metal reflective layer.
〈従来技術〉光記録媒体は高密度・大容量の情報記録媒体として種々
の研究開発が行なわれている。特に情報の消去可能な光
磁気記録媒体は応用分野が広く種々の材料・システムが
発表されており、その実用化が待望されている。<Prior Art> Various research and developments are being conducted on optical recording media as high-density, large-capacity information recording media. In particular, a wide variety of materials and systems have been announced for use in erasable magneto-optical recording media, and their practical application is eagerly awaited.
上述の光磁気記録材料としては、例えば、特開昭５２−
３１７０３号公報記載のＦｅＴｂ、特開昭５６−１２６
９０７号公報記載のＦｅＴｂＧｄ、特開昭５８−７３７
４６号公報記載のＦｅＴｂＣｏ、ＦｅＣｏＤｙ、特開昭
６１−１６５８４６号公報記載のＦｅＮｄ等既に多くの
提案がある。しかし、これらの情報の消去可能な光磁気
記録媒体の実用化には、記録、再生特性のより一層の向
上が必要である。As the above-mentioned magneto-optical recording material, for example, JP-A-52-
FeTb described in Publication No. 31703, JP-A-56-126
FeTbGd described in Publication No. 907, JP-A-58-737
There have already been many proposals such as FeTbCo and FeCoDy described in Japanese Patent Application Laid-Open No. 165846/1984. However, in order to put these information erasable magneto-optical recording media into practical use, it is necessary to further improve recording and reproducing characteristics.
これに対し、光磁気記録層上、もしくはその上に誘電体
層を介して金属反射層を設ける方法が提案されている。In contrast, a method has been proposed in which a metal reflective layer is provided on the magneto-optical recording layer or thereon via a dielectric layer.
この方式はカー効果とファラデー効果の併用により高い
Ｃ／Ｎ比を得る点で優れている。従来この金属反射層と
して、Ａ１を用いたもの（特開昭５８−８３３４６号公
報、特開昭５９−１３２４３４号公報、） 、Ｃｕを用
いたもの（特開昭５９−８１５０号公報）、Ａ１系合金
を用いたもの（特開昭６２−１３７７４３号公報、特開
昭６４−４９３８号公報）、ステンレスを用いたもの（
特開昭５９−１７１０５４号公報） 、Ｔｅを用いたも
の（特開昭６２−５２７４４号公報）、非晶質金属膜を
用いたらのく特開昭６１−５７０５３号公報）等が提案
されている。しかしながら、高反射率のＡｇ、Ａ１゜Ｃ
ｕ等を用いた場合にはその熱伝導性のため記録感度が大
幅に低下し、一方比較的熱伝導性の低いステンレス、Ｔ
ｅを用いた場合には記録感度は向上するが反射率が低い
ため、十分なＣ／Ｎ比が得られないという問題を有する
。This method is excellent in that a high C/N ratio can be obtained by using both the Kerr effect and the Faraday effect. Conventionally, as this metal reflective layer, those using A1 (Japanese Unexamined Patent Publication No. 58-83346, JP 59-132434), those using Cu (Japanese Unexamined Patent Application No. 59-8150), A1 Type alloys (JP-A-62-137743, JP-A-64-4938), stainless steel (JP-A-62-137743, JP-A-64-4938)
JP-A-59-171054), using Te (JP-A-62-52744), using an amorphous metal film (JP-A-61-57053), etc. have been proposed. There is. However, Ag with high reflectance, A1°C
When using stainless steel, T, etc., which have relatively low thermal conductivity, the recording sensitivity decreases significantly due to their thermal conductivity.
When using e, the recording sensitivity is improved, but the reflectance is low, so there is a problem that a sufficient C/N ratio cannot be obtained.
また高温多湿化での記録層の劣化があり、これら金属層
で記録層を保護する問題がある。Furthermore, the recording layer deteriorates due to high temperature and humidity, and there is a problem in protecting the recording layer with these metal layers.
これらの問題に対し、ＡＩへのＴａ添加（特開昭６４−
４９３８号公報）、Ａｕ、八ｇ、 ＡＩ、 ＣＩＪへの
Ｔｉ、 Ｈｇ、希土類の添加（特開昭５９−３８７８１
号公報） 、ＡＩへのＣｕ−Ｈｇ合金、Ｈｇ−３ｉ合金
、Ｃｒ、 Ｓｎ、 Ｈｇの添加（特開昭８２−２３９３
４９号公報）、Ａ１へのＴｉ添加（特開昭６２−１３７
７４３号公報、特開昭６４−６６８４７号公報）等の各
種合金膜が提案されている。しかし、これらの従来の合
金膜により、高反射率を保持したままで熱伝導率を改善
することは可能であるが、高温多湿化での耐久性を改善
するには、添加元素をかなりの量添加する必要があり、
これに必要な量添加すると反射層として必要な高反射率
を保持することはできず、反射層及び保護層の両機能を
満足するものが得られない。To solve these problems, Ta addition to AI (Japanese Unexamined Patent Application Publication No. 1983-1999)
No. 4938), addition of Ti, Hg, and rare earth elements to Au, 8g, AI, CIJ (Japanese Patent Application Laid-Open No. 59-38781)
Addition of Cu-Hg alloy, Hg-3i alloy, Cr, Sn, Hg to AI (Japanese Unexamined Patent Publication No. 82-2393)
49), addition of Ti to A1 (JP-A-62-137)
Various alloy films have been proposed, such as those disclosed in Japanese Patent Laid-open No. 743 and Japanese Patent Application Laid-Open No. 64-66847. However, although it is possible to improve thermal conductivity while maintaining high reflectance with these conventional alloy films, it is necessary to add significant amounts of additive elements to improve durability under high temperature and high humidity conditions. It is necessary to add
If the required amount is added, it will not be possible to maintain the high reflectance required for the reflective layer, and a layer that will satisfy both the functions of a reflective layer and a protective layer will not be obtained.
〈発明の目的〉本発明はかかる現状に鑑みなされたもので、金属反射層
の改良により高感度で高Ｃ／Ｎ比の特性を有し、かつ耐
久性に優れた光記録媒体を提供することを目的としたも
のである。<Objective of the Invention> The present invention was made in view of the current situation, and it is an object of the present invention to provide an optical recording medium that has characteristics of high sensitivity and high C/N ratio and excellent durability by improving the metal reflective layer. The purpose is to
〈発明の構成及び作用効果〉上述の目的は以下の本発明により達成される。<Structure and effects of the invention>The above objects are achieved by the invention as follows.
すなわち、本発明は、金属反射層を有する光記録媒体に
おいて、該金属反射層がＡｇにＹ（イツトリウム）、Ｒ
ｅ（レニウム）、Ｓｎ（すず）の少なくとも一種を含有
せしめたＡＱ合金からなることを特徴とする光記録媒体
である。That is, the present invention provides an optical recording medium having a metal reflective layer, in which the metal reflective layer contains Ag, Y (yttrium), R
This optical recording medium is made of an AQ alloy containing at least one of e (rhenium) and Sn (tin).
上述の本発明は以下のようにしてなされたものである。The above-mentioned present invention was made as follows.
すなわち、本発明者らは上述の欠点を克服すべく鋭意検
討した結果、該金属反射層をＡＵにＹ、 Ｒｅ、 Ｓｎ
を含有せしめた八〇合金とすることにより、従来例の酊
反射膜に比較して記録感度、Ｃ／Ｎが高く、更に経時安
定性に優れた光磁気記録媒体が得られることを見出し、
上述の本発明に想到した。That is, as a result of intensive studies by the present inventors to overcome the above-mentioned drawbacks, the metal reflective layer is made of Y, Re, Sn in AU.
It was discovered that a magneto-optical recording medium with higher recording sensitivity and C/N and superior stability over time compared to conventional reflective films could be obtained by using an 80 alloy containing
The above-mentioned present invention has been conceived.
上記の通り本発明の金属反射層を形成する合金は、Ｙ、
Ｒｅ、 Ｓｎの少なくとも１種を含有するＡΩ合金で
ある。 Ｙ、 Ｒｅ、 Ｓｎの含有量は充分微量でも
効果があり、実用上から０，１〜３０ａｔ％（原子％）
の範囲が好ましい、 ０１ａｔ％より少ないと記録感度
向上効果が低下するとともに経時安定性の向上効果も低
下する。一方３０ａｔ％より多くなると反射率が低下し
、Ｃ／Ｈの低下が大きくなる。なお、Ｙ。As mentioned above, the alloy forming the metal reflective layer of the present invention is Y,
It is an AΩ alloy containing at least one of Re and Sn. The content of Y, Re, and Sn is effective even in a sufficiently small amount, and for practical purposes, it is 0.1 to 30 at% (at%).
It is preferable that the amount is less than 01 at %, the effect of improving recording sensitivity will be reduced and the effect of improving stability over time will also be reduced. On the other hand, when the amount exceeds 30 at %, the reflectance decreases and the decrease in C/H becomes large. Furthermore, Y.
Ｒｅ、 Ｓｎの含有量は、感度向上効果が大きく、且つ
Ｃ／Ｎも高くてその低下が比較的小さい点で２〜１５ａ
ｔ％がより好ましい。The content of Re and Sn is 2 to 15a in that it has a large sensitivity improvement effect and has a high C/N with a relatively small decrease.
t% is more preferred.
この金属反射層の膜厚は１００〜１０００人が好ましく
、２００〜７００人が更に好ましい、厚すぎる場合には
感度が低下し、薄すぎる場合には反射率が低下する。こ
れら金属反射層の形成方法としては、公知の真空蒸着法
、スパッタリング法、イオンビームスパッタリング法、
ＣＶＤ法などが考えられるが、下地層との接着性、合金
組成の制御性、組成分布などの点でスパッタリング法が
好ましい。The thickness of this metal reflective layer is preferably 100 to 1000, more preferably 200 to 700. If it is too thick, the sensitivity will decrease, and if it is too thin, the reflectance will decrease. Methods for forming these metal reflective layers include known vacuum evaporation methods, sputtering methods, ion beam sputtering methods,
A CVD method may be considered, but a sputtering method is preferable in terms of adhesion to the underlayer, controllability of alloy composition, composition distribution, and the like.
また膜の堆積速度、ガス圧などは、生産性、膜応力を考
慮し、適宜選択される。Further, the film deposition rate, gas pressure, etc. are appropriately selected in consideration of productivity and film stress.
本発明の光記録媒体としては、前述の光磁気記録媒体の
他、周知のコンパクトディスク、ビデオディスク等反射
膜を用いるものであれば特に限定されないことは本発明
の趣旨から明らかである。It is clear from the spirit of the present invention that the optical recording medium of the present invention is not particularly limited as long as it uses a reflective film, such as well-known compact disks and video disks, in addition to the above-mentioned magneto-optical recording medium.
中でも光磁気記録媒体に特に好ましく適用できる。Among these, it can be particularly preferably applied to magneto-optical recording media.
ところで、この光磁気記録媒体は、記録層としては、光
熱磁気効果により記録できるものであればよく、公知の
、膜面に垂直な方向に磁化容易方向を有し、磁気光学効
果の大きい磁性金属薄膜、例えば前述のＦｅＴｂ合金、
ＦｅＴｂＣｏ合金、ＦｅＴｂＧｄ合金及びＮｄＤｙＦｅ
Ｃｏ合金、等の希土類元素−遷移金属元素の非晶質合金
が代表例として挙げられる。光磁気記録層の膜厚は１５
０〜１０００Ａ 、好ましくは２００〜５００ Ａであ
る。By the way, in this magneto-optical recording medium, the recording layer may be any material as long as it can record by the photothermal magnetic effect, and may be a known magnetic metal having an easy magnetization direction perpendicular to the film surface and having a large magneto-optic effect. a thin film, such as the aforementioned FeTb alloy,
FeTbCo alloy, FeTbGd alloy and NdDyFe
Typical examples include amorphous alloys of rare earth elements and transition metal elements, such as Co alloys. The film thickness of the magneto-optical recording layer is 15
0-1000A, preferably 200-500A.
またその積層構成は、その金属反射層が光磁気記録層の
光入射面と反対側に形成される点を除いてその構成は特
に限定されない、なお、金属反射層は光磁気記録層上に
直接設けても、またその上に感度、Ｃ／Ｎ向上の目的で
透明誘電体層を介して設けてもよい、しかし本発明の特
定のＡ（１合金からなる金属反射膜は光磁気記録層に接
して直接設けた構成で、その記録感度とＣ／Ｎにおいて
実用上充分といわれる性能を示し、上記透明誘電体層が
不要となるので、この構成は生産性と媒体コストの観点
より好ましい。The laminated structure is not particularly limited, except that the metal reflective layer is formed on the side opposite to the light incident surface of the magneto-optical recording layer.The metal reflective layer is formed directly on the magneto-optical recording layer. However, the metal reflective film made of the specific alloy A (1) of the present invention may be provided on the magneto-optical recording layer with a transparent dielectric layer interposed thereon for the purpose of improving sensitivity and C/N. This structure is preferable from the viewpoint of productivity and medium cost because the structure in which they are directly provided in contact with each other shows performance that is said to be practically sufficient in terms of recording sensitivity and C/N, and the transparent dielectric layer described above is not required.
なお、光磁気記録層と金属反射層との間に、透明誘電体
層を設ける場合においても、この透明誘電体層は最適性
能を得るためには６００Å以下と薄くする必要があり、
その断熱作用が小さくなるため、本発明は効果的である
。また、−船釣に、該透明誘電体層が厚くなる程、その
断熱効果が高くなり、本発明の金属反射膜のＡ（］に対
する前記特定の元素の含有量は少なくてよい。Note that even when a transparent dielectric layer is provided between the magneto-optical recording layer and the metal reflective layer, this transparent dielectric layer needs to be as thin as 600 Å or less in order to obtain optimal performance.
The present invention is effective because its heat insulating effect is reduced. In addition, for boat fishing, the thicker the transparent dielectric layer, the higher its heat insulating effect, and the content of the specific element in A() of the metal reflective film of the present invention may be small.
また上述の光磁気記録媒体は、また、基板と光磁気記録
層の間に、Ｃ／Ｎ向上、媒体の反射率低減、さらには透
湿防止の目的で透明誘電体層を設けてもよい。Further, in the above-mentioned magneto-optical recording medium, a transparent dielectric layer may be provided between the substrate and the magneto-optical recording layer for the purpose of improving C/N, reducing the reflectance of the medium, and further preventing moisture permeation.
上記構成に用いる基板側、金属反射層側の両透明誘電体
層としては、その目的により光干渉効果、カー効果エン
ハンスメント等の効果を奏することが必要で、ある程度
以上の高屈折率を有することが好ましい、また使用する
レーザー光に透明であることが必要であり、透明誘電体
層としては公知の通り金属の酸化物、窒化物、硫化物、
炭化物、弗化物もしくはこれらの複合体が適用できる。Both the transparent dielectric layers on the substrate side and the metal reflective layer side used in the above structure need to have effects such as optical interference effect and Kerr effect enhancement depending on their purpose, and must have a high refractive index above a certain level. It is preferable that the transparent dielectric layer is transparent to the laser beam used, and as the transparent dielectric layer, metal oxides, nitrides, sulfides,
Carbide, fluoride, or a composite thereof can be applied.
具体的にはＳｉｎ、 ５ｉ０２． Ｉｎｚ Ｏａ、 ５
ｎ０２． Ｔａ１Ｏｓ 。Specifically, Sin, 5i02. Inz Oa, 5
n02. Ta1Os.
＾１ｓｉＮ 、 八１ｓｉＯＮ、 八ＩＮ 、
ＳｉＮ 、ＴｉＮ 、ＺｎＳ 。^1siN, 81siON, 8IN,
SiN, TiN, ZnS.
８ｇＦ２．ＡＩＦ、、ＳｉＣ及びこれらの複合物が挙げ
られるが、これに限定されないことは言うまでもない、
またパリレン、ポリイミド、パラフィンなど有機物も適
用できる。これら透明誘電体層の膜厚は、媒体構成、屈
折率により最適値が変化し、−ａ的に決めることはでき
ないが、通常４００〜１５００人程度、特に５００〜１
０００人が好適に用いられる。これら透明誘電体層は公
知の常法により達成される０例えば前述の無機物よりな
るものは公知の真空蒸着法、スパッタリング法、イオン
ビームスパッタリング法、ＣＶＤ法等で作製される。8gF2. Examples include, but are not limited to, AIF, SiC, and composites thereof.
Organic materials such as parylene, polyimide, and paraffin can also be used. The optimal thickness of these transparent dielectric layers varies depending on the medium configuration and refractive index, and cannot be determined in terms of -a, but it is usually about 400 to 1500 people, especially 500 to 1500 people.
000 people is preferably used. These transparent dielectric layers can be produced by known conventional methods. For example, those made of the above-mentioned inorganic materials can be produced by known vacuum evaporation methods, sputtering methods, ion beam sputtering methods, CVD methods, and the like.
また基板としては、ガラス、アクリル樹脂、ポリカーボ
ネート樹脂、エポキシ樹脂、４−メチルペンテン樹脂及
びそれらの変成品などが好適に用いられるが、機械的強
度１価格、耐候性、ｆｆ１ｆ熱性。Further, as the substrate, glass, acrylic resin, polycarbonate resin, epoxy resin, 4-methylpentene resin, modified products thereof, etc. are suitably used, but they have mechanical strength, weather resistance, and ff1f heat resistance.
透湿量の点でポリカーボネート樹脂が好ましい。Polycarbonate resin is preferred in terms of moisture permeability.
以下本発明の光磁気記録媒体は公知の通り通常耐擦傷性
、より一層の耐久性の向上のため更に有機樹脂からなる
保護層で被覆して使用される。As is known in the art, the magneto-optical recording medium of the present invention is usually further coated with a protective layer made of an organic resin in order to improve its scratch resistance and durability.
かかる有ｔａ樹脂として公知のもと同様紫外線硬化樹脂
、熱硬化樹脂等が適用される。更に、公知の通り２枚を
記録層が内側になるように貼り合わせて両面媒体として
も使用される。As such a resin, an ultraviolet curing resin, a thermosetting resin, etc., as well as those known in the art, can be used. Furthermore, as is well known, it can also be used as a double-sided medium by bonding two sheets together with the recording layer facing inside.
以下、本発明の光磁気記録媒体での実施例を説明するが
、本発明は以下の実施例に限定されるものではない。Examples of the magneto-optical recording medium of the present invention will be described below, but the present invention is not limited to the following examples.
〈実施例、比較例〉直径１３０鰭、厚さ１．２市の円盤で１．６μｍピッチ
のグループを有するポリカーボネート樹脂（ＰＣ）製の
ディスク基板を、３ターゲツト設置可能な高周波マグネ
トロンスパッタ装置（アルバック製５ＢＨ−５１１０）
の真空槽内に固定し、５Ｘ１０−ＴＴｏｒｒになるまで
排気した。<Examples and Comparative Examples> A polycarbonate resin (PC) disk substrate with a diameter of 130 fins, a thickness of 1.2 cm, and groups of 1.6 μm pitch was sputtered using a high-frequency magnetron sputtering device (ULVAC) capable of installing 3 targets. 5BH-5110)
It was fixed in a vacuum chamber and evacuated to 5×10-TTorr.
次にＡｒ、 Ｎ２混合ガス（Ａｒ：Ｎｚ±７０ ： ３
０ｖ。Next, Ar, N2 mixed gas (Ar:Nz±70:3
0v.
％）を真空槽内に導入し、圧力５ｎ＋Ｔｏｒｒになるよ
うにＡｒ／ Ｎ２混合ガス流量を調整した。ターゲット
としては直径１５０ｍｔｒ、厚さ５關のＡｌ３Ｏ３＋７
０ （以下、添数字は組成（原子％）を示す）の焼結体
からなる円盤を用い、放電電力５００１４．放電周波数
１３．５６ＭＨｚで高周波スパッタリングを行ない、透
明誘電体としてＡ１゜５Ｓｉ２５Ｎ５ｏを約８００人堆
積した。%) was introduced into the vacuum chamber, and the Ar/N2 mixed gas flow rate was adjusted so that the pressure was 5n+Torr. The target is Al3O3+7 with a diameter of 150 mtr and a thickness of 5 mm.
0 (hereinafter, the suffix indicates the composition (atomic %)) using a disk made of a sintered body with a discharge power of 50014. High-frequency sputtering was performed at a discharge frequency of 13.56 MHz, and approximately 800 layers of A1°5Si25N5o were deposited as a transparent dielectric.
続いて光磁気記録層として、■ｂ２３Ｆｅ６９Ｃ０８合
金ターゲットを用い、＾ｒガス圧６１ＴＯｒｒ、放電電
力２００Ｗ、放電周波数１３．５６ＭＨｚの条件で高周
波スパッタリングを行ない、約３００人のＴｂＦｅＣｏ
合金膜を堆積した。Next, as a magneto-optical recording layer, using a b23Fe69C08 alloy target, high-frequency sputtering was performed under the conditions of a gas pressure of 61 TOrr, a discharge power of 200 W, and a discharge frequency of 13.56 MHz. Approximately 300 TbFeCo
An alloy film was deposited.
更に引き続いて光磁気記録層と同じ条件で高周波スパッ
タリングを行ない、表１の各組成で４００人の金属反射
層を堆積し、ＰＣ基板／＾１ｓｉＮ／ＴｂＦｅＣｏ／金
属反射層の堆積構成の光磁気ディスクのサンプルを得た
。金属反射層の各Ａｇ合金膜は５市の正方形の各チップ
を配置したＡ（］タターゲラを用い、量はチップの数を
変化させて各組成に調整して形成した。比較例１はＡ（
ｌ膜でＡ（］タターゲラのみを用いて形成した。Subsequently, high-frequency sputtering was performed under the same conditions as for the magneto-optical recording layer, and 400 metal reflective layers were deposited with each composition shown in Table 1, thereby producing a magneto-optical disk with a stacked configuration of PC substrate/^1siN/TbFeCo/metal reflective layer. sample was obtained. Each Ag alloy film of the metal reflective layer was formed using an A(] Tatagera with 5 square chips arranged, and the amount was adjusted to each composition by changing the number of chips. Comparative Example 1 was A().
It was formed using only A(]Tatatera in the l membrane.
これら各層の形成時において、ＰＣ基板は２０ｒｐｌで
回転させた。During the formation of each of these layers, the PC board was rotated at 20 rpl.
得られたサンプルの評価は、記録感度と直結した最適記
録レーザーパワーとＣ／Ｎで行なった。The obtained samples were evaluated using the optimum recording laser power and C/N, which are directly linked to the recording sensitivity.
これらの測定は、光磁気記録再生装置（ナカミチ０Ｈ３
−１０００）を用い、下記の条件で書き込み時の半導体
レーザーパワーを変化させ、再生信号の二次高調波が最
小となる時を最適記録条件として行なった。These measurements were carried out using a magneto-optical recording and reproducing device (Nakamichi 0H3).
-1000), the semiconductor laser power during writing was varied under the following conditions, and the optimum recording condition was when the second harmonic of the reproduced signal was minimized.
［記録条件］ディスク回転速度： １８００ｒｐｒＱ、記録トラック
位置二半径３０市位置、記録周波数： １．０２４ＭＨ
ｚ、印加磁界：５００エルステツド、レーザー光波長：
３０ｎｉ［再生条件］ディスク回転速度： １８００ｒｏｎ 、続出レーザー
パワー： ０．８１Ｗ 、レーザー光波長： ８３０ｎ
ｎ＋最適記録入力及びＣ／Ｈの測定結果を表−１に示す
。[Recording conditions] Disc rotation speed: 1800rprQ, recording track position 2 radius 30cm position, recording frequency: 1.024MH
z, applied magnetic field: 500 oersted, laser light wavelength:
30ni [Playback conditions] Disc rotation speed: 1800ron, continuous laser power: 0.81W, laser light wavelength: 830n
Table 1 shows the measurement results for n+ optimal recording input and C/H.
なお、表−１の比較例１の最適記録レーザーパワーの桐
の２０１Ｗ以上は、用いたレーザーの最大出力１０ｎＷ
でも記録できず、ディスク回転速度を上述の半分に低下
して最大出力１０１にで記録した時少しの再生信号が得
られたことを表わしたものである。In addition, the optimum recording laser power of 201 W or more for Comparative Example 1 in Table 1 is the maximum output of the laser used, 10 nW.
However, when the disk rotational speed was reduced to half of the above-mentioned speed and recording was performed at the maximum output of 101, a small reproduction signal was obtained.
表−１のディスクではＣ／Ｎ、外観とも全く変化がなく、本発
明の金属反射膜は、反射膜自体が耐久性に優れると共に
記録膜の劣化を防止する保護機能も有することが確認さ
れた。There was no change in C/N or appearance in the discs shown in Table 1, and it was confirmed that the metal reflective film of the present invention not only has excellent durability, but also has a protective function to prevent deterioration of the recording film. .
以上、実施例に示した如く、本発明のＹ、 Ｒ（ｉ。As shown in the examples above, Y, R(i) of the present invention.
Ｓｎを含有したＡ（］合金からなる金属反射膜では、記
録感度が良く、Ｃ／Ｎ感度が優れ、かつ耐久性も高い光
磁気記録媒体を得ることができる。特にＹ。With a metal reflective film made of an A() alloy containing Sn, a magneto-optical recording medium with good recording sensitivity, excellent C/N sensitivity, and high durability can be obtained.In particular, Y.
Ｒｅ、 Ｓｎの含有量が１５ａｔ％（原子％）以下の範
囲はＣ／Ｎが高く、かつ最適記録入力の低下すなわち記
録感度の向上も大きく本発明の効果が顕著であり、特に
好ましいことがわかる。It can be seen that in a range where the content of Re and Sn is 15 at% or less, the C/N is high and the optimum recording input is reduced, that is, the recording sensitivity is greatly improved, and the effect of the present invention is remarkable and is particularly preferable. .
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1258883AJPH03122845A (en) | 1989-10-05 | 1989-10-05 | Optical recording medium |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1258883AJPH03122845A (en) | 1989-10-05 | 1989-10-05 | Optical recording medium |
| Publication Number | Publication Date |
|---|---|
| JPH03122845Atrue JPH03122845A (en) | 1991-05-24 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1258883APendingJPH03122845A (en) | 1989-10-05 | 1989-10-05 | Optical recording medium |
| Country | Link |
|---|---|
| JP (1) | JPH03122845A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002237097A (en)* | 2000-12-08 | 2002-08-23 | Mitsubishi Chemicals Corp | Optical recording medium |
| US7645500B2 (en)* | 2003-04-18 | 2010-01-12 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US8232042B2 (en)* | 2005-03-31 | 2012-07-31 | Kabushiki Kaisha Toshiba | Storage medium, reproducing method, and recording method |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002237097A (en)* | 2000-12-08 | 2002-08-23 | Mitsubishi Chemicals Corp | Optical recording medium |
| US7645500B2 (en)* | 2003-04-18 | 2010-01-12 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US8232042B2 (en)* | 2005-03-31 | 2012-07-31 | Kabushiki Kaisha Toshiba | Storage medium, reproducing method, and recording method |
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