【発明の詳細な説明】（産業上の利用分野）本発明は、所定領域に光を照射することによって変調を
行なう光変調器に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an optical modulator that performs modulation by irradiating light onto a predetermined area.
（従来の技術）第２図は、従来の光変調器を示す構成図である。(Conventional technology)FIG. 2 is a block diagram showing a conventional optical modulator.
第２図において、ｌａ、ｌｂはガラス等からなる透明基
板、２ａ、２ｂは透明導電層、３は光導電層、４は遮光
層、５は誘電体ミラー ６ａ、６ｂは液晶配向フィルム
、７は液晶で、透明基板１ａ上に、透明導電層２ａ、光
導電層３、遮光層４、誘電体ミラー５、液晶配向フィル
ム６ａ、液晶７、液晶配向フィールムロｂ、透明導電層
２ｂ、透明基板１ｂの順に積層、配設されて、光変調器
が構成されている。In FIG. 2, la and lb are transparent substrates made of glass or the like, 2a and 2b are transparent conductive layers, 3 is a photoconductive layer, 4 is a light shielding layer, 5 is a dielectric mirror, 6a and 6b are liquid crystal alignment films, and 7 is a With a liquid crystal, on a transparent substrate 1a, a transparent conductive layer 2a, a photoconductive layer 3, a light shielding layer 4, a dielectric mirror 5, a liquid crystal alignment film 6a, a liquid crystal 7, a liquid crystal alignment film b, a transparent conductive layer 2b, and a transparent substrate 1b. The optical modulator is constructed by sequentially stacking and disposing the optical modulator.
この光変調器を動作させるには、透明導電層２ａ、２ｂ
間に交流電圧を印加しておき、光信号を透明基板１ａ側
から光導電層３の所定領域に照射する。これにより、光
の照射された光導電層３の領域は、インピーダンスが低
下しその領域の液晶７に強い電界が印加されていると、
液晶７の状態が変化し、このとき、透明基板１ｂ側から
照射された光の偏向状態が変化する。この偏向状態の変
化を利用し、光のオン・オフ等の変調を行なう（応用物
理、５７巻、８号、Ｐ、１１３６．ＳｒＤ ８６
ＤＩＧＥＳＴ Ｐ３７９）。In order to operate this optical modulator, transparent conductive layers 2a, 2b are required.
An alternating current voltage is applied in between, and an optical signal is irradiated onto a predetermined region of the photoconductive layer 3 from the transparent substrate 1a side. As a result, the impedance of the area of the photoconductive layer 3 irradiated with light decreases, and a strong electric field is applied to the liquid crystal 7 in that area.
The state of the liquid crystal 7 changes, and at this time, the polarization state of the light irradiated from the transparent substrate 1b side changes. Utilizing this change in the polarization state, modulation such as turning the light on and off is performed (Applied Physics, Vol. 57, No. 8, P, 1136. SrD 86
DIGEST P379).
なお、このように、光を所定領域に照射して変調を行な
う光変調器としては、液晶を用いたものの他にも、ＢＳ
Ｏ，ＬｉＮｂ０ 、ＰＬＺＴ、す−モプラスチックを
採用したもの等が多数知られている（応用物理、５７巻
、８号、Ｐ１１３６）。In addition to the optical modulator that modulates light by irradiating it onto a predetermined area, in addition to those using liquid crystals, there are
A large number of materials are known that employ O, LiNb0, PLZT, and Sumoplastic (Oyoi Physics, Vol. 57, No. 8, P1136).
また、上記したように、光を照射して変調を行なう光変
調器の他にも、電気的に領域を指定するものも知られて
いる。In addition to optical modulators that perform modulation by irradiating light as described above, there are also known optical modulators that electrically specify areas.
即ち、例えば、間隔をおいて複数の電荷蓄積電極が配列
された回路層上に、弾性体層、光反射層が積層された構
成を有し、電圧が印加され電荷が蓄積された電荷蓄積電
極の領域では、光反射層と回路層との間の電気引力が強
くなり、これにより弾性体層が変形し、光反射層が窪む
。この変化を（り用して、光のオン・オフ等の制御を行
なう光変調器である（特開昭６０−２５３３８３号公報
、あるいは特開昭６１−１４８４３１号公報参照）。That is, for example, a charge storage electrode has a structure in which an elastic layer and a light reflection layer are laminated on a circuit layer in which a plurality of charge storage electrodes are arranged at intervals, and a voltage is applied to accumulate charge. In the region, the electrical attraction between the light-reflecting layer and the circuit layer becomes strong, thereby deforming the elastic layer and causing the light-reflecting layer to become depressed. This is an optical modulator that utilizes this change to control the on/off of light, etc. (see Japanese Patent Laid-Open No. 60-253383 or Japanese Patent Laid-Open No. 61-148431).
（発明が解決しようとする課題）しかしながら、前者の光変調器（第２図）では、光を制
御するために透明導電層２ａ、２ｂ間に、光導電層３、
遮光層４、Ｔｓ電体ミラー５、液晶配向フィルム６ａ、
６ｂ及び液晶７と多数の層を必要とするため、これらの
層の厚さの和が２０〜３０μｍと厚くなってしまい、光
変調器としての解像度は３０本／ ｍｓ程度が限界であ
るという問題点があった。(Problem to be Solved by the Invention) However, in the former optical modulator (FIG. 2), in order to control light, a photoconductive layer 3,
Light shielding layer 4, Ts electric mirror 5, liquid crystal alignment film 6a,
6b and liquid crystal 7, the total thickness of these layers is as thick as 20 to 30 μm, and the resolution of the optical modulator is limited to about 30 lines/ms. There was a point.
また、後者の光変調器も、回路の集積化に制限があり、
光変調器としての解像度は２０〜５０本／＋ｕ程度が限
界であるという問題点があった。In addition, the latter optical modulator also has limitations on circuit integration.
There was a problem in that the resolution as an optical modulator was limited to about 20 to 50 lines/+u.
本発明の目的は、上記問題点に鑑み、厚さを薄くでき、
しかも集積化の制限等を受けず、高い解像度を得ること
のできる光変調器を提供することにある。In view of the above problems, an object of the present invention is to reduce the thickness,
Moreover, it is an object of the present invention to provide an optical modulator that can obtain high resolution without being subject to limitations such as integration.
（課題を解決するための手段）本発明は上記目的を達成するため、透明導電層と、光の
照射によって光照射領域のインピーダンスが低下する光
導電層と、絶縁性弾性体層と、導電性光反射層とを備え
、透明基板上に前記各層を表記した順に積層した。(Means for Solving the Problems) In order to achieve the above object, the present invention includes a transparent conductive layer, a photoconductive layer whose impedance decreases in a light irradiated area when irradiated with light, an insulating elastic layer, and a conductive layer. Each layer was laminated on a transparent substrate in the order shown.
（作 用）本発明によれば、透明導電層と導電性光反射層間に、例
えば書込み電圧を印加し、透明基板側から所定領域に光
を照射すると、この光照射領域の光導電層のインピーダ
ンスが低下する。これにより、光照射領域には強い電界
が印加されることになり、導電性光反射層は透明導電層
側に吸引されて絶縁性弾性体層と共に変形（窪む）する
。この導電性光反射層の変形領域による反射光は、散乱
し、光変調が行なわれる。一方、前記書込み電圧と逆方
向にリセット電圧を印加すると、透明導電層から光導電
層に電子が注入されて、変形領域の窪みが平に修正され
る。(Function) According to the present invention, when, for example, a writing voltage is applied between the transparent conductive layer and the conductive light reflection layer and light is irradiated from the transparent substrate side to a predetermined area, the impedance of the photoconductive layer in the light irradiation area changes. decreases. As a result, a strong electric field is applied to the light irradiation region, and the conductive light reflection layer is attracted toward the transparent conductive layer and deforms (deforms) together with the insulating elastic layer. The light reflected by the deformed region of the conductive light-reflecting layer is scattered and optically modulated. On the other hand, when a reset voltage is applied in the opposite direction to the write voltage, electrons are injected from the transparent conductive layer into the photoconductive layer, and the depression in the deformed region is corrected to be flat.
（実施例）第１図は、本発明による光変調器の実施例を示す構成図
である。図中、１０は透明基板で、石英ガラス、パイレ
ックスガラス等の無機材料、あるいはポリプロピレン、
アクリル等の有機材料を用いて構成される。１１は透明
基板１０上に積層された透明導電層で、ＩＴＯ，Ｉｎ
Ｏ、Ｓｎ０３等を用いて構成される。１２は透明導電
層１１上に積層された光導電層で、例えばａ−Ｓｔｌａ
−５ｅ、ａ−ＡｓＳｅ等の無機材料、あるいはＰＶＫ−
ＴＮＦ、フタロシアニン分散系等の有機材料を用いて構
成され、透明導電層１１から電子を注入可能で、ホール
に関してはブロッキング的な界面特性を有している。ま
た、その厚さは高解像度を実現するために、０．２μｍ
〜５μｍ程度の範囲内で選定され、光が照射された領域
ではそのインピーダンスが低下する。１３は光導電層１
２上に積層された絶縁性弾性体層で、シリコン−ゲル等
の材料を用いて構成され、高解像度を得られ、かつ光の
変調効率が低下しないように、０．２μｍ〜２０μｍ程
度の範囲内で、適度な厚さが選定される。１４は絶縁性
弾性体層１３上に積層されＩ：導電性光反射層で、Ａｉ
’ ｓ Ａ ｇ ｓ Ａ ｕ等の蒸着膜を用いて構成さ
れ、厚さは０．０１μｍ〜１μｍ程度の範囲で選定され
る。(Embodiment) FIG. 1 is a block diagram showing an embodiment of an optical modulator according to the present invention. In the figure, 10 is a transparent substrate made of inorganic material such as quartz glass or Pyrex glass, or polypropylene.
Constructed using organic materials such as acrylic. 11 is a transparent conductive layer laminated on the transparent substrate 10, which is made of ITO, In
It is constructed using O, Sn03, etc. 12 is a photoconductive layer laminated on the transparent conductive layer 11, for example, a-Stla.
-5e, inorganic materials such as a-AsSe, or PVK-
It is constructed using an organic material such as TNF or a phthalocyanine dispersion system, and can inject electrons from the transparent conductive layer 11, and has interfacial characteristics that block holes. In addition, the thickness is 0.2 μm to achieve high resolution.
The impedance is selected within a range of approximately 5 μm, and the impedance decreases in the region irradiated with light. 13 is photoconductive layer 1
This is an insulating elastic layer laminated on 2, made of a material such as silicone gel, and has a thickness in the range of about 0.2 μm to 20 μm in order to obtain high resolution and not reduce light modulation efficiency. An appropriate thickness is selected within the range. 14 is laminated on the insulating elastic layer 13; I: conductive light reflecting layer;
It is constructed using a vapor deposited film such as 'sAgsAu, and the thickness is selected within the range of approximately 0.01 μm to 1 μm.
１５は電圧印加部で、透明導電層１１と導電性光反射層
１４間に、第３図に示した、絶縁性弾性体層１３及び導
電性光反射層１４をリセットするためのリセット電圧Ｒ
Ｖと、光導電層１２に光により制御情報を書き込むため
の書込み電圧ＷＶを印加する。Reference numeral 15 denotes a voltage application section, which applies a reset voltage R for resetting the insulating elastic layer 13 and the conductive light reflection layer 14, as shown in FIG. 3, between the transparent conductive layer 11 and the conductive light reflection layer 14.
V and a write voltage WV for writing control information into the photoconductive layer 12 by light.
また、第４図はリセット電圧ＲＶ印加時の電子の流れの
説明図、第５図は光照射領域と非光照射領域の電位分布
の説明図及び第６図は光照射領域の導電性光反射層１４
の変形の説明図であり、次に、これら第３図乃至第６図
に基づいて第１図の光変調器の動作を説明する。In addition, Fig. 4 is an explanatory diagram of the flow of electrons when the reset voltage RV is applied, Fig. 5 is an explanatory diagram of the potential distribution in the light irradiation area and non-light irradiation area, and Fig. 6 is an illustration of the conductive light reflection in the light irradiation area. layer 14
1. Next, the operation of the optical modulator shown in FIG. 1 will be explained based on FIGS. 3 to 6. FIG.
例えば、第４図に示すように、透明導電層１１と導電性
光反射層１４間に電圧印加部１５によりリセット電圧Ｒ
Ｖが印加されると、透明導電層１１からマイナスの電荷
、即ち電子ＥＬが注入され、これら電子ＥＬが第４図中
、矢印で示すように、光導電層１２と絶縁性弾性体層１
３との界面まで流れ、その界面でトラップされる。For example, as shown in FIG.
When V is applied, negative charges, that is, electrons EL are injected from the transparent conductive layer 11, and these electrons EL, as shown by arrows in FIG.
It flows to the interface with 3 and is trapped at that interface.
次に、電圧印加部１５により、書込み電圧ＷＶを印加し
、かつ光を透明基板１０側から照射して、光制御情報を
書込む。これによって、光照射領域は、光により励起さ
れたホールが光導電層１２と絶縁性弾性体層１３との界
面まで流れ、その界面にリセット時にトラップされた電
荷（電子）を中和し、さらにプラスの電荷が蓄積される
。Next, the voltage application unit 15 applies a write voltage WV and irradiates light from the transparent substrate 10 side to write light control information. As a result, in the light irradiation area, the holes excited by the light flow to the interface between the photoconductive layer 12 and the insulating elastic layer 13, neutralize the charges (electrons) trapped at the interface at the time of resetting, and further A positive charge is accumulated.
この時の、光照射領域と非光照射領域の電位分布を第５
図により説明する。第５図において、縦軸は電位、横軸
は各層領域を示しており、１１は透明導電層、−１２は
光導電層、１３は絶縁性弾性体層、１４は導電性光反射
層、ａは光導電層１２と絶縁性弾性体層１３との界面、
実線Ａは非光照射領域の電位分布、破線Ｂは界面ａに電
荷が存在しない場合の電位分布、−点鎖線Ｃは光照射領
域の電位分布である。At this time, the potential distribution of the light irradiation area and the non-light irradiation area is
This will be explained using figures. In FIG. 5, the vertical axis represents the potential, and the horizontal axis represents each layer area, 11 is a transparent conductive layer, -12 is a photoconductive layer, 13 is an insulating elastic layer, 14 is a conductive light reflecting layer, a is the interface between the photoconductive layer 12 and the insulating elastic layer 13,
The solid line A is the potential distribution in the non-light irradiated area, the broken line B is the potential distribution when no charge is present at the interface a, and the -dotted chain line C is the potential distribution in the light irradiated area.
ここで絶縁性弾性体層１４中の電界について着目してみ
ると、非光照射領域では非常に小さく、光照射領域では
極めて大きくなっていることがわかる。従って、電界の
強い箇所では、透明導電層１１側に吸引されて変形し、
これにより絶縁性弾性体層１３に強い圧力が加わること
になり、第６図に示すように、光照射領域だけ凹状に窪
む。If we pay attention to the electric field in the insulating elastic layer 14, we can see that it is very small in the non-light irradiated area and extremely large in the light irradiated area. Therefore, in places where the electric field is strong, it is attracted to the transparent conductive layer 11 side and deformed.
As a result, a strong pressure is applied to the insulating elastic layer 13, and as shown in FIG. 6, only the light irradiated area becomes depressed.
この変形を利用して、シュリーレン光学系と組合わせる
ことにより、光を変調することができる。By utilizing this deformation and combining it with a Schlieren optical system, light can be modulated.
第７図は、本発明による光変調器を投影型デイスプレィ
に応用した場合の構成図である。第７図において、２０
は当該光変調器、２０ａは光が照射されて導電性光反射
層が凹凸に変形した領域、２０ｂは光が照射されず、導
電性光反射層が変形していない領域、２１は光源、２２
は光変調器２０で反射された光をスクリーン２３上に投
影するだめの投影レンズ、２３ａはスクリーン２３上の
明部、２３ｂはスクリーン２３上の暗部である。FIG. 7 is a configuration diagram when the optical modulator according to the present invention is applied to a projection display. In Figure 7, 20
20a is a region where the conductive light reflection layer is not irradiated with light and the conductive light reflection layer is not deformed; 21 is the light source; 22
23a is a bright area on the screen 23, and 23b is a dark area on the screen 23.
このような構成においては、光源２１からの光は、光変
調器２０の導電性光反射層上に集光される。このとき、
導電性光反射層の光が照射されて変形した領域２０ａで
は、光が散乱され投影レンズ２２に達する光量が激減す
る。In such a configuration, light from light source 21 is focused onto the conductive light reflective layer of light modulator 20. At this time,
In the region 20a of the conductive light reflecting layer that is irradiated with light and deformed, light is scattered and the amount of light reaching the projection lens 22 is drastically reduced.
一方、導電性光反射層の変形していない領域２０ｂでは
、反射光は散乱することなくそのまま投影レンズ２２に
達する。その結果、スクリーン２３上で導電性光反射層
の変形した領域２０ａに対応した箇所は暗くなり（暗部
２３ｂ）、変形していない領域２０ｂに対応した箇所は
明るくなる（明部）。On the other hand, in the undeformed region 20b of the conductive light reflection layer, the reflected light reaches the projection lens 22 as it is without being scattered. As a result, the area on the screen 23 corresponding to the deformed area 20a of the conductive light-reflecting layer becomes dark (dark area 23b), and the area corresponding to the undeformed area 20b becomes bright (bright area).
以上のように本実施例によれば、光変調器を、透明基板
１０上に、透明導電層１１、光導電層１２、絶縁性弾性
体層１３、導電性光反射層１４の順に積層して構成し、
電圧印加部１５により、透明導電層１１と導電性光反射
層１４間にリセット電圧ＲＶＳ＃込み電圧ＷＶを印加し
、さらに所定領域に光を透明基板１０側から照射するよ
うにしたので、薄型でしかも集積化等の制約を受けず大
きさが限定されることはなく、高い解像度、例えば１０
００本／ ｍｍ以上の解像度を有する光変調器を実現で
きる。As described above, according to this embodiment, the optical modulator is formed by laminating the transparent conductive layer 11, the photoconductive layer 12, the insulating elastic layer 13, and the conductive light reflecting layer 14 in this order on the transparent substrate 10. configure,
The voltage application unit 15 applies the voltage WV including the reset voltage RVS# between the transparent conductive layer 11 and the conductive light reflection layer 14, and furthermore, the predetermined area is irradiated with light from the transparent substrate 10 side. Moreover, it is not subject to restrictions such as integration and is not limited in size, and has high resolution, e.g.
An optical modulator with a resolution of 00 lines/mm or more can be realized.
なお、本実施例において、光導電層１２としてａ−５ｉ
等の無機材料、ＰＶＫ−ＴＮＦ等の有機材料により構成
したが、これに限定されるものではなく、他にも、透明
導電層１１上に０，１μｍ〜０．３μｍ程度の厚さにフ
タロシアニン微粒子を分散させて塗付層を形成し、さら
にその上に０．２μｍ〜４μｍ程度の厚さにピラゾリン
を分散させた塗付層からなる機能分離型の光導電層を構
成してもよく、良好な動作特性を得ることができる。In this example, a-5i was used as the photoconductive layer 12.
The transparent conductive layer 11 is made of inorganic materials such as inorganic materials such as PVK-TNF, organic materials such as PVK-TNF, etc., but is not limited to these materials. A functionally separated photoconductive layer may be formed by dispersing pyrazoline to form a coating layer, and further comprising a coating layer with pyrazoline dispersed thereon to a thickness of approximately 0.2 μm to 4 μm. It is possible to obtain excellent operating characteristics.
また、光導電層が電荷注入型でない場合（Ｓｅ等で構成
）には、リセット電圧ＲＶ印加時に透明基板１０側から
全面光照射を行なうと光導電層中にキャリアが発生し、
透明導電層１１からキャリアが電界注入された場合と同
様の効果が得られる。Furthermore, if the photoconductive layer is not of a charge injection type (composed of Se or the like), carriers are generated in the photoconductive layer when the entire surface is irradiated with light from the transparent substrate 10 side when the reset voltage RV is applied.
The same effect as when carriers are injected from the transparent conductive layer 11 by electric field can be obtained.
（発明の効果）以上説明したように、本発明によれば、透明導電層と、
光の照射によって光照射領域のインピーダンスが低下す
る光導電層と、絶縁性弾性体層と、導電性光反射層とを
備え、透明基板上に前記各層を表記した順に積層したの
で、薄型の光変調器を構成できると共に、集積化等の制
約を受けず、大きさが限定されることはなく、しかも透
明導電層と導電性光反射層に電圧を印加しつつ、導電性
光反射層を変形させる領域を光の照射によって指定でき
るため、従来の光変調器に比較して、数十倍量上の高い
解像度を実現できる利点がある。(Effects of the Invention) As explained above, according to the present invention, a transparent conductive layer,
It is equipped with a photoconductive layer whose impedance decreases in the light irradiated area when irradiated with light, an insulating elastic layer, and a conductive light-reflecting layer, and these layers are laminated in the order shown on a transparent substrate. It is possible to construct a modulator, is not subject to restrictions such as integration, and is not limited in size.Moreover, the conductive light-reflecting layer can be deformed while applying voltage to the transparent conductive layer and the conductive light-reflecting layer. Since the area to be affected can be specified by irradiation with light, it has the advantage of achieving a resolution several tens of times higher than that of conventional optical modulators.
第１図は本発明による光変調器の実施例を示す構成図、
第２図は従来の光変調器の構成図、第３図は第１図の光
変調器に印加する電圧波形図、第４図はリセッｈａ圧印
加時の電子の流れの説明図、第５図は光照射領域と非光
照射領域の電位分布の説明図、第６図は光照射領域の導
電性光反射層の変形の説明図、第７図は本発明による光
変調器を投影型デイスプレィに応用した場合の構成図で
ある。図中、１０・・・透明基板、１１・・・透明導電層、１
２・・・光導電層、１３・・・絶縁性弾性体層、１４・
・・導電性光反射層、１５・・・電圧印加部。特許出願人 日本電信電話株式会社FIG. 1 is a configuration diagram showing an embodiment of an optical modulator according to the present invention;
Fig. 2 is a configuration diagram of a conventional optical modulator, Fig. 3 is a voltage waveform diagram applied to the optical modulator of Fig. 1, Fig. 4 is an explanatory diagram of the flow of electrons when reset ha pressure is applied, and Fig. 5 The figure is an explanatory diagram of the potential distribution in the light irradiated area and the non-light irradiated area, FIG. 6 is an explanatory diagram of the deformation of the conductive light reflection layer in the light irradiated area, and FIG. 7 is an illustration of the optical modulator according to the present invention as a projection display. It is a block diagram when applied to. In the figure, 10...Transparent substrate, 11...Transparent conductive layer, 1
2... Photoconductive layer, 13... Insulating elastic layer, 14.
. . . Conductive light reflection layer, 15 . . . Voltage application section. Patent applicant Nippon Telegraph and Telephone Corporation
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24077788AJPH0290129A (en) | 1988-09-28 | 1988-09-28 | Optical modulator |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24077788AJPH0290129A (en) | 1988-09-28 | 1988-09-28 | Optical modulator |
| Publication Number | Publication Date |
|---|---|
| JPH0290129Atrue JPH0290129A (en) | 1990-03-29 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24077788APendingJPH0290129A (en) | 1988-09-28 | 1988-09-28 | Optical modulator |
| Country | Link |
|---|---|
| JP (1) | JPH0290129A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9632223B2 (en) | 2013-10-24 | 2017-04-25 | Moxtek, Inc. | Wire grid polarizer with side region |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9632223B2 (en) | 2013-10-24 | 2017-04-25 | Moxtek, Inc. | Wire grid polarizer with side region |
| Publication | Publication Date | Title |
|---|---|---|
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