JPH02184022A - Cvd electrode - Google Patents

Abstract

PURPOSE:To make material supply quantity uniform on a substrate so as to form a film whose thickness in extremely uniform on the whole by providing a material gas supply system and an exhaust system in one electrode within a CVD electrode, and providing a plurality of openings of material gas outflow ports and exhaust ports, which are adjacent to each other, at the surface of an electrode. CONSTITUTION:An introduction tube 7 for material gas, which includes carrier gas, and an exhaust tube 8 constitute a double-tube. Material gas, which is introduced from the material gas introduction tube 7 after being adjusted for flow rate, flows out of plural material gas leading-out ports 9 and enters plasma. And products of the reaction, residual gas after the reaction, etc., are sucked in through exhaust ports 10-1 and 10-2, which are provided adjacently to the material gas leading-out port 9, and are exhausted from the exhaust tube 8. Accordingly, the reactive products do not float between CVD electrodes and are immediately sucked and exhausted from the exhaust port provided in the electrode, so the reactive products of material never increase at the center of the electrode. For this reason, the supply quantity of material becomes uniform, and the thickness of a film being formed becomes uniform as a whole. Also, since pressure distribution does not occur in the electrode, the plasma concentration, the thickness of the formed film, and the film quality become uniform.

Description

Translated fromJapanese

【発明の詳細な説明】（産業上の利用分野）本発明は、ＬＳＩ等半導体装置の製造に用いられるＣＶ
Ｄ装置のＣＶＤ電極に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to CV
Regarding the CVD electrode of the D device.

（従来の技術）化学的気相成長法（以下ＣＶＤ法という）は薄膜を構成
する元素からなる一種またはそれ以上の化合物気体を基
板表面に送り、基板表面上で化学反応させて目的の薄膜
を形成する方法である。(Prior art) The chemical vapor deposition method (hereinafter referred to as CVD method) sends one or more compound gases consisting of elements constituting a thin film to the substrate surface, causes a chemical reaction on the substrate surface, and forms the desired thin film. This is a method of forming.

このＣＶＤ法は膜形成時にＰやＢ等のドーパントの添加
が容易であり、不必要な不純物の混入が少ないという特
徴があるため、主として３ｉ、５ｉ０２、Ｓｉ３Ｎ４等
の８１系薄膜の形成に用いられる重要な技術である。This CVD method is characterized by the fact that it is easy to add dopants such as P and B during film formation, and there is little mixing of unnecessary impurities, so it is mainly used to form 81-based thin films such as 3i, 5i02, Si3N4, etc. This is an important technology.

ＣＶＤ法ニハ常圧ＣＶＤ法、減ＪＩＣＶＤ法、プラズマ
ＣＶＤ法等の技術があるが、プラズマＣＶＤ法は低温で
成膜が可能なことから近年、益々多用されるようになっ
た。There are techniques such as the CVD method, the normal pressure CVD method, the reduced JICVD method, and the plasma CVD method, but the plasma CVD method has been increasingly used in recent years because it allows film formation at low temperatures.

プラズマＣＶＤ法は０．１〜１ＴＯｒｒの減圧下で５０
ＫＨｚ　〜１３．５６ＭＨ７の高周波励起によりプラズ
マを発生さ（！薄膜を生成する方法であるが、グロー放
電のプラズマ中に原料気体を送りこみ、活性度の高い原
子や分子のラジカルを作り、これらラジカルの反応性を
利用するので、４００°Ｃ以下の低温で反応が可能とな
る。The plasma CVD method is performed under reduced pressure of 0.1 to 1 TOrr.
Plasma is generated by high-frequency excitation of KHz ~ 13.56 MH7 (! This is a method to generate a thin film, but raw material gas is sent into the plasma of glow discharge to create highly active atomic and molecular radicals, and these radicals Since it utilizes the reactivity of

一般に用いられているプラズマＣＶＤ装置の断面図を第
１図に示す。FIG. 1 shows a cross-sectional view of a commonly used plasma CVD apparatus.

図において、円形の平行平板電極１．２が設置され、ウ
ェハー３は下部の接地電極２の上に置かれ、上下の電極
間でグロー放電を起させるために１部電極１に高周波電
圧が印加される。In the figure, a circular parallel plate electrode 1.2 is installed, a wafer 3 is placed on the lower ground electrode 2, and a high frequency voltage is applied to part of the electrode 1 to cause a glow discharge between the upper and lower electrodes. be done.

流出調整された原料ガスはキャリアガスとともに原料ガ
ス流入管４から流入し、排気管５から排気される。The raw material gas whose outflow has been adjusted flows into the raw material gas inlet pipe 4 together with the carrier gas, and is exhausted from the exhaust pipe 5.

上部電極１は第１図に示すように、電極表面に網目もし
くはふるい白状の開口部が設けてあり、流入した原料ガ
スが各開口部からできるだけ均一にプラズマの中に入る
ように工夫されている。As shown in Fig. 1, the upper electrode 1 has mesh or sieve-like openings on its surface, and is designed so that the incoming source gas enters the plasma as uniformly as possible from each opening. .

下部電極２はその上に置いた基板を加熱できるようにな
っている。The lower electrode 2 is capable of heating a substrate placed thereon.

電極間のギャップは通常１０ｍｍ以内に設定することが
多い。The gap between the electrodes is usually set to within 10 mm.

従来、以上のようなプラズマＣＶＤ電極が用いられてい
るが、しかし、このようなＣＶＤ電極は電極の中央部の
圧力が高いというような電極に圧力分布が生じ易く、そ
のためプラズマ濃度、形成された膜の膜厚、膜質等が不
均一になる欠点がある。Conventionally, plasma CVD electrodes such as those described above have been used, but such CVD electrodes tend to have a pressure distribution in the electrode where the pressure is high in the center of the electrode, and as a result, the plasma concentration and the formed There is a drawback that the film thickness, film quality, etc. are non-uniform.

また、電極中央部に原料の反応生成物が多くなり、その
ため原料供給量が少なくなり、電極中央部に形成された
膜は膜厚が薄くなるというような不均一な膜質分布が発
生する欠点がある。In addition, there are many reaction products of the raw materials in the center of the electrode, which reduces the amount of raw materials supplied, and the film formed in the center of the electrode has the disadvantage of being thinner, resulting in uneven film quality distribution. be.

さらに、原料の反応残ガスにより密閉されたＣｖＤ反応
室６が汚染され、ダストが発生し易いという欠点がある
。Furthermore, there is a drawback that the closed CvD reaction chamber 6 is contaminated by the reaction residual gas of the raw materials, and dust is likely to be generated.

また、電界強度、プラズマ状態等と成膜する膜厚分布と
を切り離して調整できない欠点がある。In addition, there is a drawback that electric field strength, plasma state, etc. and film thickness distribution to be formed cannot be adjusted separately.

（解決しようとする問題点）本発明は、上記の欠点を除去し、均一な膜厚、膜質の膜
が形成できるＣＶＤ電極を提供しようとするものである
。(Problems to be Solved) The present invention aims to eliminate the above-mentioned drawbacks and provide a CVD electrode capable of forming a film of uniform thickness and quality.

（問題を解決するための手段）本発明は、上部電極において原料ガスのプラズマ中への
流出口と隣接して排気口を設け、上部電極内で原料ガス
の供給と排気を行なわしめるようにしたものである。(Means for Solving the Problem) In the present invention, an exhaust port is provided in the upper electrode adjacent to the outlet for raw material gas into the plasma, and the raw material gas is supplied and exhausted within the upper electrode. It is something.

第２図は本発明になる上部電極の断面図である。FIG. 2 is a sectional view of the upper electrode according to the present invention.

本発明を第２図にしたがって詳細に説明する。The present invention will be explained in detail with reference to FIG.

キャリアガスを含む原料ガス導入管７と排気管８とは二
重管になっている。The raw material gas introduction pipe 7 containing the carrier gas and the exhaust pipe 8 are double pipes.

原料ガス導入管７から流量調整されて導入された原料ガ
スは複数の原料ガス導出口９から流出しプラズマの中に
入る。The raw material gas introduced from the raw material gas inlet pipe 7 with its flow rate adjusted flows out from the plural raw material gas outlet ports 9 and enters the plasma.

一方、原料の反応生成物、反応残ガス等は原料ガス導出
口９に隣接して設けられた排気口１０−１．１０−２か
ら吸引され排気管８から排気される。したがって、第１
図に示すような排気管５は必ずしも必要としない。On the other hand, reaction products of raw materials, reaction residual gas, etc. are sucked through exhaust ports 10-1 and 10-2 provided adjacent to raw material gas outlet 9 and exhausted through exhaust pipe 8. Therefore, the first
The exhaust pipe 5 shown in the figure is not necessarily required.

上部電極を以上のような構造にすることによって、反応
生成物はＣＶＤ電極間を浮遊せず直ちに電極に設けられ
た排気口から吸引排気されるため電極中央部に原料の反
応生成物が多くなるようなことはなく、そのため原料供
給量が均一化し形成された膜の膜厚は全体的に均一とな
る。また、電極に圧力分布が生じないためプラズマ濃度
、形成された膜の膜厚、膜質等が均一になる。By configuring the upper electrode as above, the reaction products do not float between the CVD electrodes and are immediately sucked and exhausted from the exhaust port provided on the electrode, so that more reaction products from the raw materials are in the center of the electrode. This does not occur, and as a result, the amount of raw materials supplied becomes uniform, and the thickness of the formed film becomes uniform throughout. Further, since no pressure distribution occurs on the electrode, the plasma concentration, the thickness and quality of the formed film, etc. are uniform.

また、原料の反応残ガス、反応生成物等は排気口から直
ちに排気され、ＣＶＤ反応掌中を浮遊することがないの
で、反応室が汚染されたり、ダストが発生したりするこ
ともなく、形成された膜の膜質は極めて優れている。In addition, reaction residual gases of raw materials, reaction products, etc. are immediately exhausted from the exhaust port and do not float in the CVD reaction chamber, so the reaction chamber is not contaminated or dust is generated. The film quality of the obtained film is extremely excellent.

なお、本発明になる電極はＣＶＤ法による薄膜の製造の
みならず、東、レジスト等のエツチング装置にも応用で
きるものである。The electrode of the present invention can be applied not only to the production of thin films by the CVD method, but also to etching equipment for resists and the like.

（発明の効果）本発明によれば、原料の反応生成物は直ちに電極に設け
られた排気口から吸引排気されるため原料供給（社）が
基板上均一化し、全体的に極めて均一な膜厚の膜を形成
できる特徴がある。(Effects of the Invention) According to the present invention, the reaction products of the raw materials are immediately suctioned and exhausted from the exhaust port provided on the electrode, so that the raw material supply is made uniform over the substrate, resulting in an extremely uniform film thickness overall. It has the characteristic of being able to form a film of

また、電極に圧力分布が生じないためプラズマ濃度、形
成された膜の膜厚、膜質等が均一になる特徴がある。In addition, since no pressure distribution occurs in the electrode, the plasma concentration, the thickness of the formed film, the quality of the film, etc. are uniform.

さらに、反応室内でダストが発生することがなくクリー
ンであるため形成された膜の膜質は極めて良質である特
徴がある。Furthermore, since no dust is generated in the reaction chamber and the reaction chamber is clean, the quality of the formed film is extremely high.

さらに、本発明になる電極はＣＶＤ法にょる薄膜の製造
のみならず、エツチング装置にも応用できる利点がある
。Furthermore, the electrode of the present invention has the advantage that it can be applied not only to the production of thin films by the CVD method but also to etching equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は従来のプラズマＣＶＤ装置の断面図である。図において、１は上部電極、２は下部電極、３はウェー
ハ、４は原料ガス流入管、５は排気管、６はＣＶＤ反応
室である。第２図は本発明になる上部電極の断面図である。図において、７は原料ガス導入管、８は排気管、９は原
料ガス導出口、１０−１．１０−２は排気口である。FIG. 1 is a sectional view of a conventional plasma CVD apparatus. In the figure, 1 is an upper electrode, 2 is a lower electrode, 3 is a wafer, 4 is a source gas inlet pipe, 5 is an exhaust pipe, and 6 is a CVD reaction chamber. FIG. 2 is a sectional view of the upper electrode according to the present invention. In the figure, 7 is a raw material gas introduction pipe, 8 is an exhaust pipe, 9 is a raw material gas outlet, and 10-1 and 10-2 are exhaust ports.

Claims (1)

Translated fromJapanese

【特許請求の範囲】[Claims]ＣＶＤ電極中の一つの電極に原料ガス供給系と排気系を
設け、隣接した原料ガス流出口と排気口の開口部を電極
表面に複数個有することを特徴とするＣＶＤ電極。A CVD electrode characterized in that one electrode in the CVD electrode is provided with a raw material gas supply system and an exhaust system, and has a plurality of adjacent raw material gas outlet and exhaust openings on the electrode surface.