【発明の詳細な説明】〔産業上の利用分野〕本発明は、半導体デバイス等の微細構造物の製作工程中
に存するプラズマＣＶＤあるいはプラズマエツチング等
の処理を行うドライプロセス装置において、半導体ウェ
ーハ等の被処理物をプラズマ励起用高周波印加電極上に
載置し、この電極をヒータにより加熱し、被処理物を加
熱してドライプロセス処理を行うための高周波印加電極
のヒータ加熱装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention is applicable to dry process equipment that performs processing such as plasma CVD or plasma etching during the manufacturing process of microstructures such as semiconductor devices. The present invention relates to a heater heating device for a high frequency application electrode for placing a workpiece on a high frequency application electrode for plasma excitation, heating the electrode with a heater, and heating the workpiece to perform a dry process.
第１図を参照して従来装置の一例を説明すると、従来装
置は反応室３内に接地電極２と高周波印加電極５を対向
して配設し、反応ガスの流通下で、高周波印加電極５を
ヒータ７により加熱しながら接地電極２に対し高周波印
加電極５に高周波電源１７により高周波電力を印加する
ことにより高周波印加電極５上のウェーハ４をプロセス
処理する構成になっている。An example of a conventional device will be described with reference to FIG. 1. In the conventional device, a ground electrode 2 and a high-frequency application electrode 5 are disposed facing each other in a reaction chamber 3, and the high-frequency application electrode 5 is The wafer 4 on the high frequency application electrode 5 is processed by applying high frequency power from the high frequency power supply 17 to the high frequency application electrode 5 with respect to the ground electrode 2 while heating the wafer 4 with the heater 7 .
しかしながら、上記従来装置にあっては、接地電極２に
対し高周波印加電極５に高周波電力を印加して画電極２
，５の間でプラズマ放電している時にヒータ７により高
周波印加電極５の加熱を行うと、高周波ノイズがヒータ
回路に流れる電流に重畳し、高周波ノイズによりヒータ
７あるいはヒータ電源２６が破壊するおそれがあると共
に高周波ノイズが外部装置に悪影響を及ぼすおそれがあ
るばかりでなく、高周波印加電極５を効率よく加熱する
ことが困難であるという課題があった。However, in the above-mentioned conventional device, high frequency power is applied to the high frequency application electrode 5 with respect to the ground electrode 2, and the picture electrode 2
, 5, if the heater 7 heats the high-frequency application electrode 5 during plasma discharge, the high-frequency noise will be superimposed on the current flowing through the heater circuit, and there is a risk that the heater 7 or the heater power supply 26 will be destroyed by the high-frequency noise. In addition, there is a problem that not only is there a possibility that the high-frequency noise may have an adverse effect on external devices, but also that it is difficult to heat the high-frequency application electrode 5 efficiently.
また、高周波印加電極５に高周波電力を印加した状態で
、ヒータ７により高周波印加電極５の加熱を行う場合、
高周波ノイズによるヒータ７またはヒータ電源２６の破
壊のおそれがあること、高周波印加電極５の加熱温度を
熱電対９により高精度に測定することが高周波ノイズの
混入により難しいこと、高周波ノイズにより熱電対９が
破損するおそれがあることから高周波ノイズの混入によ
りヒータ温度制御部２２による高周波印加電極５の加熱
温度の自動制御が困難になるという課題もあった。Further, when heating the high frequency application electrode 5 with the heater 7 while applying high frequency power to the high frequency application electrode 5,
There is a risk of damage to the heater 7 or the heater power supply 26 due to high frequency noise, it is difficult to accurately measure the heating temperature of the high frequency application electrode 5 with the thermocouple 9 due to the incorporation of high frequency noise, and the thermocouple 9 is difficult to measure with high accuracy due to high frequency noise. There is also a problem that automatic control of the heating temperature of the high-frequency application electrode 5 by the heater temperature control section 22 becomes difficult due to the incorporation of high-frequency noise, since there is a risk that the high-frequency noise may be damaged.
本発明の第１装置は上記の課題を解決するため、第１図
示のように反応室３内に接地電極２と高周波印加電極５
を対抗して配設し、反応ガスの流通下で、高周波印加電
極５をヒータ７により加熱しながら接地電極２に対し高
周波印加電極５に高周波電力を印加することにより、高
周波印加電極５上の被処理物４をプロセス処゛理するド
ライプロセス装置において、高周波印加電極５中に、と
−タ７を埋設したヒータシース６を挿設し、このヒータ
７に通電するヒータ燃線１１をトロイダルコア１２に巻
回してインダクタンス１８を形成せしめ、このインダク
タンス１８にフィルタエ９を接続してノイズ除去回路２
３を構成すると共に、このノイズ除去回路２３をシール
ドケース２４に収めてなる構成としたものである。In order to solve the above problems, the first device of the present invention has a ground electrode 2 and a high frequency application electrode 5 in the reaction chamber 3 as shown in the first diagram.
are arranged opposite to each other, and while the high-frequency applying electrode 5 is heated by the heater 7 under the flow of the reaction gas, high-frequency power is applied to the high-frequency applying electrode 5 with respect to the grounded electrode 2. In a dry process apparatus for processing a workpiece 4, a heater sheath 6 in which a heater 7 is embedded is inserted into a high frequency application electrode 5, and a heater wire 11 that energizes the heater 7 is connected to a toroidal core 12. is wound to form an inductance 18, and a filter element 9 is connected to this inductance 18 to form a noise removal circuit 2.
3, and this noise removal circuit 23 is housed in a shield case 24.
本発明の第２装置は上記の課題を解決するため、第１装
置において高周波印加電極５中に、感温素子９を埋設し
た感温素子シース８を挿設し、この感温素子９に接続し
たノイズ対策用感温素子引出部１３をシールドケース２
４に収め、このノイズ対策用惑星素子引出部１３より得
られる電極温度検出信号をヒータ温度制御部２２に入力
してヒータ７への通電量を調整し、高周波印加電極５の
加熱温度を自動制御するように構成したものである。In order to solve the above-mentioned problems, the second device of the present invention has a temperature-sensitive element sheath 8 in which a temperature-sensitive element 9 is embedded in the high-frequency application electrode 5 in the first device, and is connected to the temperature-sensitive element 9. The shield case 2
4, and inputs the electrode temperature detection signal obtained from the noise countermeasure planetary element drawer 13 to the heater temperature control unit 22 to adjust the amount of current to the heater 7 and automatically control the heating temperature of the high frequency application electrode 5. It is configured to do so.
第１装置において反応ガスの流通下で、高周波印加電極
５をヒータ７により加熱しながら接地電極２に対し高周
波印加電極５に高周波電力を印加すると、画電極２．５
間にプラズマ放電が発生し、このプラズマ放電により高
周波印加電極５上の被処理物４がプロセス処理される。In the first device, under the flow of reaction gas, when high frequency power is applied to the high frequency applying electrode 5 with respect to the ground electrode 2 while heating the high frequency applying electrode 5 with the heater 7, the image electrode 2.5
During this time, a plasma discharge is generated, and the object 4 on the high frequency application electrode 5 is processed by this plasma discharge.
この場合、高周波印加電極５中に、ヒータ７を埋設した
ヒータシース６が挿設されているので、ヒータ７はヒー
タシース６を介して高周波印加電極５に接しており、こ
の電極５と当該電極５上の被処理物４の加熱は効率よく
行えることになる。In this case, since the heater sheath 6 in which the heater 7 is embedded is inserted into the high-frequency application electrode 5, the heater 7 is in contact with the high-frequency application electrode 5 through the heater sheath 6, and the heater 7 is in contact with the high-frequency application electrode 5 through the heater sheath 6. This means that the object to be processed 4 can be heated efficiently.
また、高周波電源１７により発生する高周波ノイズはヒ
ータ回路中のインダクタンス１８と、フィルタ１９によ
るノイズ除去回路２３により除去されることになり、ヒ
ータ７またはヒータ電源２６が高周波ノイズによって破
壊されることがないばかりでなく、ノイズ除去回路２３
はシールドケース２４に収められているので、高周波ノ
イズが外部装置に悪影響を及ぼすこともない。Furthermore, the high frequency noise generated by the high frequency power source 17 is removed by the inductance 18 in the heater circuit and the noise removal circuit 23 including the filter 19, so that the heater 7 or the heater power source 26 will not be destroyed by the high frequency noise. Not only that, but also the noise removal circuit 23
Since it is housed in the shield case 24, high frequency noise will not have an adverse effect on external devices.
第２装置においては上記第１装置と同様の作用効果を奏
するだけでなく、高周波印加電極５中に、感温素子９を
埋設した感温素子シース８が埋設されているので、感温
素子９は感温素子シース８を介して高周波印加電極５に
接しており、この電極５及び当該電極５上の被処理物４
の加熱温度は比較的高精度で検出できる。The second device not only has the same effect as the first device, but also has a temperature sensing element sheath 8 embedded in the high frequency application electrode 5, so that the temperature sensing element 9 is embedded in the temperature sensing element 9. is in contact with the high frequency application electrode 5 via the temperature sensing element sheath 8, and this electrode 5 and the object to be treated 4 on the electrode 5
The heating temperature of can be detected with relatively high accuracy.
また高周波ノイズによるヒータまたはヒータ電源２６の
破壊のおそれがないこと、高周波ノイズが感温素子９の
電極温度検出信号に混入しないため、感温素子９が破損
することはなく、高周波印加電極５の加熱温度を感温素
子９により高精度に測定することができることがらヒー
タ温度制御部２２による高周波印加電極５の加熱温度の
自動制御が容易になるものである。In addition, there is no risk of damage to the heater or heater power supply 26 due to high frequency noise, and since high frequency noise does not mix into the electrode temperature detection signal of the temperature sensing element 9, the temperature sensing element 9 will not be damaged and the high frequency application electrode 5 will not be damaged. Since the heating temperature can be measured with high precision by the temperature sensing element 9, automatic control of the heating temperature of the high frequency application electrode 5 by the heater temperature control section 22 becomes easy.
以下図面に基づいて本発明の詳細な説明する。The present invention will be described in detail below based on the drawings.
第１図は本発明装置の一実施例の構成を示す簡略断面図
、第２図は本発明におけるインダクタンスの一例を示す
斜視図である。FIG. 1 is a simplified sectional view showing the configuration of an embodiment of the device of the present invention, and FIG. 2 is a perspective view showing an example of the inductance in the present invention.
第１図において３は反応室（真空容器）で、ガス導入口
２７と排気口２８を有する。２，５はそれぞれ反応室３
内に対向して配設した接地電極（上部電極）と高周波印
加電極（下部電極）である。反応室３と接地電極２はア
ース１に接続されている。In FIG. 1, reference numeral 3 denotes a reaction chamber (vacuum container), which has a gas inlet 27 and an exhaust port 28. 2 and 5 are reaction chambers 3, respectively.
A ground electrode (upper electrode) and a high frequency application electrode (lower electrode) are arranged to face each other inside. The reaction chamber 3 and the ground electrode 2 are connected to the earth 1.
高周波印加電極５上にはウェーハ４がセットされており
、当該電極５中にはヒータ７を埋設したヒータシース６
が挿設されている。A wafer 4 is set on the high frequency application electrode 5, and a heater sheath 6 in which a heater 7 is embedded is placed in the electrode 5.
is inserted.
高周波印加電極５はフィーダ１０により高周波マツチン
グユニット部１５に接続され、このユニット部１５に同
軸ケーブル１６により高周波電源１７が接続されており
、高周波電源１７はアース１に接続されている。従って
高周波印加電極５には接地電極２に対し高周波電源１７
により高周波電力が高周波マツチングユニット部１５を
介して印加される構成となっている。The high frequency applying electrode 5 is connected to a high frequency matching unit section 15 by a feeder 10, a high frequency power source 17 is connected to this unit section 15 via a coaxial cable 16, and the high frequency power source 17 is connected to the ground 1. Therefore, the high frequency power source 17 is connected to the high frequency applying electrode 5 with respect to the ground electrode 2.
The configuration is such that high frequency power is applied via the high frequency matching unit section 15.
ヒータ７に接続した２本のテトラフルオロエチレン被覆
線等のヒータ線を撚り合せたヒータ燃線１１をトロイダ
ルコア１２に巻回してインダクタンス１８が形成されて
いる。例えば第２図示のように２個のトロイダルコア１
２を合わせ、これにヒータ燃線１１を約２０回巻きして
なる。このインダクタンス１８に貫通形フィルタ１９
（Ｃ、Ｌのπ型で構成される）を接続してノイズ除去回
路２３が構成され、フィーダ１０の部分及びこのノイズ
除去回路２３がシールドケース２４に収められている。An inductance 18 is formed by winding a heater wire 11, which is made by twisting two heater wires such as tetrafluoroethylene coated wires connected to the heater 7, around a toroidal core 12. For example, as shown in the second diagram, two toroidal cores 1
2, and the heater fuel wire 11 is wound approximately 20 times around this. A through-type filter 19 is connected to this inductance 18.
A noise removal circuit 23 is constructed by connecting the noise removal circuits 23 (consisting of C and L π type), and the feeder 10 and this noise removal circuit 23 are housed in a shield case 24.
シールドケース２４の外面には高周波マツチングユニッ
ト部１５が取付けられており、貫通形フィルタ１９はシ
ールドケース２４に貫通状態で取付けられている。A high frequency matching unit section 15 is attached to the outer surface of the shield case 24, and a through-type filter 19 is attached to the shield case 24 in a penetrating state.
高周波印加電極５中には熱電対９を埋設した熱電対シー
ス８が挿設され、この熱電対９は熱電対素線１４により
ノイズ対策用熱電対引出部１３に接続されている。この
ノイズ対策用熱電対引出部１３はシールドケース２４に
収められ、貫通した状態で取付けられている。この引出
部１３に接続した熱電対素線２０とフィルタ１９に接続
したヒータケーブル２１はヒータ温度制御部２２に接続
され、このヒータ温度制御部２２にヒータ電源２６が接
続されている。A thermocouple sheath 8 in which a thermocouple 9 is embedded is inserted into the high-frequency application electrode 5 , and the thermocouple 9 is connected to a noise countermeasure thermocouple extraction part 13 by a thermocouple wire 14 . This noise countermeasure thermocouple draw-out section 13 is housed in a shield case 24 and is attached in a penetrating state. The thermocouple wire 20 connected to the lead-out section 13 and the heater cable 21 connected to the filter 19 are connected to a heater temperature control section 22, and a heater power source 26 is connected to the heater temperature control section 22.
ヒータ温度制御部２２は、熱電対９により高周波印加電
極５の加熱温度を検出し、この電極温度検出信号をノイ
ズ対策用熱電対引出部１３を通して入力し、当該電極温
度検出信号に応じてヒータケーブル２１．ノイズ除去回
路２３を介してヒータ７に通電される通電量を調整し、
高周波印加電極５の加熱温度を自動制御するものである
。The heater temperature control section 22 detects the heating temperature of the high frequency application electrode 5 using the thermocouple 9, inputs this electrode temperature detection signal through the noise countermeasure thermocouple drawer section 13, and adjusts the temperature of the heater cable according to the electrode temperature detection signal. 21. Adjusting the amount of electricity supplied to the heater 7 via the noise removal circuit 23,
The heating temperature of the high frequency application electrode 5 is automatically controlled.
２５はフィーダ１０．ヒータシース６及び熱電対シース
８の反応室３より引出部に設けられた電気的絶縁兼真空
シール保持部である。25 is the feeder 10. This is an electrically insulating/vacuum seal holding part provided at a drawer part of the heater sheath 6 and thermocouple sheath 8 from the reaction chamber 3.
上記の構成においてガス導入口２７より反応室３内に反
応ガスを導入し、排気口２８より排気する。In the above configuration, a reaction gas is introduced into the reaction chamber 3 through the gas inlet 27 and exhausted through the exhaust port 28.
この反応ガスの流通下で、ヒータ電源２６によりヒータ
温度制御部２２．ヒータケーブル２１及びノイズ除去回
路２３を通してヒータ７に通電し、高周波印加電極５を
加熱する。この場合、高周波印加電極５中に、ヒータ７
を埋設したヒータシース６が挿設されているので、ヒー
タ７はヒータシース６を介して高周波印加電極５に接し
ており、この電極５と当該電極５上のウェーハ４の加熱
は効率よく行えることになる。Under the flow of this reaction gas, the heater temperature control unit 22. Electricity is supplied to the heater 7 through the heater cable 21 and the noise removal circuit 23 to heat the high frequency application electrode 5. In this case, the heater 7 is placed in the high frequency application electrode 5.
Since the heater sheath 6 embedded therein is inserted, the heater 7 is in contact with the high frequency application electrode 5 via the heater sheath 6, and this electrode 5 and the wafer 4 on the electrode 5 can be heated efficiently. .
高周波印加電極５の加熱温度は熱電対９により検出され
る。高周波印加電極５中に、熱電対９を埋設した熱電対
シース８が挿設されているので、熱電対９は熱電対シー
ス８を介して高周波印加電極５に接しており、この電極
５及び当該電極５上のウェーハ４の加熱温度は比較的高
精度で検出できる。この電極温度検出信号は熱電対素線
１４．ノイズ対策熱電対引出部１３及び熱電対案ｖＡ２
０を通してヒータ温度制御部２２に入力され、この電極
温度検出信号に応じてヒータケーブル２１．ノイズ除去
回路２３を通してヒータ７に通電される通電量が調整さ
れ、高周波印加電極５及び当該電極５上のつ工−ハ４の
加熱温度が自動制御されることになる。The heating temperature of the high frequency application electrode 5 is detected by a thermocouple 9. Since a thermocouple sheath 8 in which a thermocouple 9 is embedded is inserted into the high frequency application electrode 5, the thermocouple 9 is in contact with the high frequency application electrode 5 via the thermocouple sheath 8, and this electrode 5 and the corresponding The heating temperature of the wafer 4 on the electrode 5 can be detected with relatively high accuracy. This electrode temperature detection signal is transmitted to the thermocouple wire 14. Noise countermeasure thermocouple drawer part 13 and thermocouple plan vA2
0 to the heater temperature control unit 22, and the electrode temperature detection signal is input to the heater cable 21. The amount of electricity supplied to the heater 7 through the noise removal circuit 23 is adjusted, and the heating temperature of the high frequency application electrode 5 and the tool 4 on the electrode 5 is automatically controlled.
このように高周波印加電極５及びウェーハ４が自動温度
制御されている場合に接地電極２に対し高周波印加電極
５に高周波電源１７により同軸ケーブル１６．高周波マ
ツチングユニット部１５及びフィーダ１０を通して高周
波電力を印加すると、画電極２．５間にプラズマ放電が
発生し、このプラズマ放電により高周波印加電極５上の
ウェーハ４がプロセス処理されることになる。かくして
プラズマ放電と高周波印加電極５の加熱制御を同時に行
うことができる。When the high frequency application electrode 5 and the wafer 4 are subjected to automatic temperature control in this way, the coaxial cable 16. When high frequency power is applied through the high frequency matching unit section 15 and the feeder 10, plasma discharge is generated between the picture electrodes 2.5, and the wafer 4 on the high frequency application electrode 5 is processed by this plasma discharge. In this way, plasma discharge and heating control of the high frequency application electrode 5 can be performed simultaneously.
放電中に温度制御を行う際に問題となるのが高周波電源
１７により発生する高周波ノイズである。A problem when performing temperature control during discharge is high frequency noise generated by the high frequency power supply 17.
この高周波電源１７により発生する高周波ノイズはヒー
タ回路中のインダクタンス１８と、フィルタ１９による
ノイズ除去回路２３により除去されることになり、ヒー
タ７またはヒータ電源２６が高周波ノイズによって破壊
されることがないばかりでなく、ノイズ除去回路２３は
シールドケース２４に収められているので、高周波ノイ
ズが外部装置に悪影響を及ぼすこともない。The high frequency noise generated by this high frequency power source 17 is removed by the inductance 18 in the heater circuit and the noise removal circuit 23 including the filter 19, so that the heater 7 or the heater power source 26 will not be destroyed by the high frequency noise. Instead, the noise removal circuit 23 is housed in the shield case 24, so that high frequency noise does not have an adverse effect on external devices.
また、熱電対回路にはノイズ対策用熱電対引出部１３が
設けられているので、高周波ノイズが熱電対９の電極温
度検出信号に混入しないため、熱電対９が高周波ノイズ
により破損されることはなく、高周波印加電極５の加熱
温度を熱電対９により高精度に測定することができるこ
と、高周波ノイズによる熱電対９またはヒータ７あるい
はヒータ電源２６の破壊のおそれがないことがらヒータ
温度制御部２２による高周波印加電極５の加熱温度の自
動制御が容易になるものである。Furthermore, since the thermocouple circuit is provided with a thermocouple draw-out section 13 for noise countermeasures, high frequency noise will not be mixed into the electrode temperature detection signal of the thermocouple 9, so the thermocouple 9 will not be damaged by high frequency noise. The heating temperature of the high-frequency application electrode 5 can be measured with high precision by the thermocouple 9, and there is no risk of damage to the thermocouple 9, heater 7, or heater power source 26 due to high-frequency noise. This facilitates automatic control of the heating temperature of the high frequency application electrode 5.
ヒータ電流が流れるヒータ線を撚り合せ、このヒータ燃
線１１をトロイダルコア１２に巻き付けてインダクタン
スＩ８を形成することによりヒータ電流（数アンペア）
によるトロイダルコア１２の磁気飽和が防止できると共
にヒータ回路に重畳する高周波ノイズをｌＬ滅すること
ができる。インダクタンス１８とフィルタ１９によりロ
ーパスフィルタを構成しているので、高周波電源１７に
より発生した高周波ノイズが除去され、シールドケース
２４でシールドしているため、外部に漏れることはない
。The heater current (several amperes) is adjusted by twisting the heater wires through which the heater current flows, and winding the heater wire 11 around the toroidal core 12 to form an inductance I8.
It is possible to prevent the magnetic saturation of the toroidal core 12 caused by this, and also to eliminate high frequency noise superimposed on the heater circuit. Since the inductance 18 and the filter 19 constitute a low-pass filter, high frequency noise generated by the high frequency power supply 17 is removed, and since it is shielded by the shield case 24, it does not leak to the outside.
トロイダルコア１２を用いることによりインダクタンス
１Ｂを小形にでき、このインダクタンス１８とフィルタ
１９により形成されるノイズ除去回路２３も小形にでき
る。By using the toroidal core 12, the inductance 1B can be made small, and the noise removal circuit 23 formed by this inductance 18 and the filter 19 can also be made small.
本実施例においては、ヒータパワーは少なくともｓｏｏ
ｗまで安定して供給できる。ヒータ７はヒータシース
６を介して高周波印加電極５に接触しているので熱伝導
がよく、約４００℃まで昇温できる。In this embodiment, the heater power is at least so
It is possible to stably supply up to w. Since the heater 7 is in contact with the high frequency application electrode 5 via the heater sheath 6, heat conduction is good and the temperature can be raised to about 400°C.
上述のように本発明の第１装置は、反応室３内に接地電
極２と高周波印加電極５を対抗して配設し、反応ガスの
流通下で、高周波印加電極５をヒータ７により加熱しな
がら接地電極２に対し高周波印加電極５に高周波電力を
印加することにより、高周波印加電極５上の被処理物４
をプロセス処理するドライプロセス装置において、高周
波印加電極５中に、ヒータ７を埋設したヒータシース６
を挿設し、このヒータ７に通電するヒータ燃線１１をト
ロイダルコア１２に巻回してインダクタンス１８を形成
せしめ、このインダクタンス１８にフィルタ１９を接続
してノイズ除去回路２３を構成すると共に、このノイズ
除去回路２３をシールドケース２４に収めてなるので、
ヒータ７はヒータシース６を介して高周波印加電極５に
接しており、熱伝導が良好となるため、高周波印加電極
５と当該電極５上の被処理物４の加熱を効率よく行うこ
とができる。また、高周波電源１７により発生する高周
波ノイズはヒータ回路中のインダクタンス１８とフィル
タ１９によるノイズ除去回路２３により除去されるので
、ヒータ７またはヒータ電源２６を高周波ノイズにより
破壊するおそれがないばかりでなく、ノイズ除去回路２
３はシールドケース２４に収められているので、高周波
ノイズが外部装置に悪影響を及ぼすことはない。As described above, in the first device of the present invention, the ground electrode 2 and the high-frequency application electrode 5 are disposed facing each other in the reaction chamber 3, and the high-frequency application electrode 5 is heated by the heater 7 while the reaction gas is flowing. By applying high frequency power to the high frequency applying electrode 5 with respect to the grounding electrode 2, the object to be processed 4 on the high frequency applying electrode 5 is
In a dry process device that processes
A heater wire 11 that energizes the heater 7 is wound around the toroidal core 12 to form an inductance 18, and a filter 19 is connected to the inductance 18 to form a noise removal circuit 23. Since the removal circuit 23 is housed in the shield case 24,
The heater 7 is in contact with the high-frequency application electrode 5 via the heater sheath 6, and the heat conduction is good, so that the high-frequency application electrode 5 and the object 4 on the electrode 5 can be efficiently heated. Further, since the high frequency noise generated by the high frequency power supply 17 is removed by the noise removal circuit 23 including the inductance 18 and the filter 19 in the heater circuit, there is not only no risk of damaging the heater 7 or the heater power supply 26 due to high frequency noise. Noise removal circuit 2
3 is housed in a shield case 24, so high frequency noise will not have a negative effect on external devices.
トロイダルコア１２にヒータ燃線１１を巻回して形成さ
れる小形のインダクタンス１８と、小形のフィルタ１９
を用いることによりノイズ除去回路２３を小形にでき、
部品点数も少なく、安価に実施できる。A small inductance 18 formed by winding the heater wire 11 around the toroidal core 12 and a small filter 19
By using , the noise removal circuit 23 can be made smaller,
The number of parts is small and it can be implemented at low cost.
また第２装置は第１装置において高周波印加電極５中に
、感温素子９を埋設した感温素子シース８を挿設し、こ
の感温素子９に接続したノイズ対策用感温素子引出部１
３をシールドケース２４に収め、このノイズ対策用感温
素子引出部１３より得られる電極温度検出信号をヒータ
温度制御部２２に入力してヒータ７への通電量を調整し
、高周波印加電極５の加熱温度を自動制御するように構
成したので、第１装置と同様の作用効果を奏するだけで
なく、感温素子９は感温素子シース８を介して高周波印
加電極５に接しており、熱伝導が良好となるため、高周
波印加電極５及び当該電極５上の被処理物４の加熱温度
を比較的高精度で検出できる。Further, in the second device, a temperature sensing element sheath 8 in which a temperature sensing element 9 is embedded is inserted into the high frequency application electrode 5 of the first device, and a temperature sensing element drawer part 1 for noise countermeasures is connected to the temperature sensing element 9.
3 is housed in a shield case 24, and the electrode temperature detection signal obtained from the noise countermeasure temperature sensing element drawer 13 is inputted to the heater temperature control section 22 to adjust the amount of current to the heater 7. Since it is configured to automatically control the heating temperature, it not only has the same effect as the first device, but also the temperature sensing element 9 is in contact with the high frequency application electrode 5 via the temperature sensing element sheath 8, and heat conduction is improved. As a result, the heating temperature of the high frequency application electrode 5 and the object to be processed 4 on the electrode 5 can be detected with relatively high accuracy.
また高周波ノイズによるヒータまたはヒータ電源２６の
破壊のおそれがないこと、高周波ノイズが感温素子９の
電極温度検出信号に混入しないため、感温素子９が破損
することはなく、高周波印加電極５の加熱温度を感温素
子９により高精度に測定することができることがらヒー
タ温度制御部２２による高周波印加電極５の加熱温度の
自動制御が容易になるという効果を奏する。In addition, there is no risk of damage to the heater or heater power supply 26 due to high frequency noise, and since high frequency noise does not mix into the electrode temperature detection signal of the temperature sensing element 9, the temperature sensing element 9 will not be damaged and the high frequency application electrode 5 will not be damaged. Since the heating temperature can be measured with high precision by the temperature sensing element 9, the automatic control of the heating temperature of the high frequency application electrode 5 by the heater temperature control section 22 is facilitated.
第１図は本発明装置の一実施例の構成を示す筒路断面図
、第２図は本発明におけるインダクタンスの一例を示す
斜視図である。２・・・・・・接地電極、３・・・・・・反応室、４・
・・・・・被処理物（ウェーハ）、５・・・・・・高周
波印加電極、６・・・・・・ヒータシース、７・・・・
・・ヒータ、８・・・・・・感温素子（熱電対）シース
、９・・・・・・感温素子（熱電対）、１０・・・・・
・フィーダ、１１・・・・・・ヒータ燃線、１２・・・
・・・トロイダルコア、１３・・・・・・ノイズ対策用
感温素子（熱電対）引出部、１４・・・・・・感温素子
（熱電対）素線、１５・・・・・・高周波マツチングユ
ニット部、１６・・・・・・同軸ケーブル、１７・・・
・・・高周波電源、１８・旧・・インダクタンス、１９
・・・・・・（１通形）フィルタ、２０・・・・・・感
温素子（熱電対）素線、２１・・・・・・ヒータケーブ
ル、２２・・・・・・ヒータ温度制御部、２３・・・・
・・ノイズ除去回路、２４・・・・・・シールドケース
、２６・・・・・・ヒータｔＲ１２７・・・−・・ガス
導入口、２８・・・・・・排気口。FIG. 1 is a cross-sectional view of a tube showing the structure of an embodiment of the device of the present invention, and FIG. 2 is a perspective view of an example of the inductance of the present invention. 2... Ground electrode, 3... Reaction chamber, 4...
...Processed object (wafer), 5 ...High frequency application electrode, 6 ... Heater sheath, 7 ...
... Heater, 8 ... Temperature sensing element (thermocouple) sheath, 9 ... Temperature sensing element (thermocouple), 10 ...
・Feeder, 11...Heater combustion wire, 12...
... Toroidal core, 13 ... Temperature sensing element (thermocouple) extraction part for noise countermeasure, 14 ... Temperature sensing element (thermocouple) strand, 15 ... High frequency matching unit section, 16... Coaxial cable, 17...
...High frequency power supply, 18. Old...Inductance, 19
...... (single type) filter, 20... Temperature sensing element (thermocouple) wire, 21... Heater cable, 22... Heater temperature control Part, 23...
... Noise removal circuit, 24 ... Shield case, 26 ... Heater tR127 ... Gas inlet, 28 ... Exhaust port.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63281783AJP2656326B2 (en) | 1988-11-07 | 1988-11-07 | Heating device for high frequency application electrode in dry process equipment |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63281783AJP2656326B2 (en) | 1988-11-07 | 1988-11-07 | Heating device for high frequency application electrode in dry process equipment |
| Publication Number | Publication Date |
|---|---|
| JPH02129373Atrue JPH02129373A (en) | 1990-05-17 |
| JP2656326B2 JP2656326B2 (en) | 1997-09-24 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63281783AExpired - Fee RelatedJP2656326B2 (en) | 1988-11-07 | 1988-11-07 | Heating device for high frequency application electrode in dry process equipment |
| Country | Link |
|---|---|
| JP (1) | JP2656326B2 (en) |
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