【発明の詳細な説明】〔産業上の利用分野〕本発明は、発光ダイオード、発光ダイオード駆動集積回
路、フォトダイオード、受信増幅器集積回路を一体化し
た光伝送モジュールに係り、特に送受動作時のクロスト
ーク、送信漏話の少ない実装構成改良に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an optical transmission module that integrates a light emitting diode, a light emitting diode drive integrated circuit, a photodiode, and a receiving amplifier integrated circuit. Regarding improvements to the implementation configuration to reduce talk and transmission crosstalk.
光伝送モジュールは、主婦と生活社発行の「ハイチック
事典」に記載され、また第２図に示すように、送信部で
ある発光ダイオード（以下ＬＥＤと略す）およびＬＥＤ
駆動回路の構成である入力バッファ回路（波形整形回路
） １１、ＬＥＤ駆動回路１２、定電流源基準電圧発生
回路１３、低電流源基準電圧発生回路１４．ＬＥＤ１５
で構成され、 １６．３３は正電源端子、１７．１８は
ＬＥＤ信号出力端子、１９゜２０は電流源接続端子、２
１．２２はモニタ信号端子、２３はＬＥＤ駆動定電流基
準電圧端子、３３は内部回路定電流源端子、２５．２６
は負電源端子、２７は内部回路定電流源調整端子、 １
８は入カバソファ電圧モニタ、２９は出力遮断端子、３
０．３２は信号入力基準電圧Ｗ！４整端子、３１は信号
入力である。The optical transmission module is described in the "High Chic Encyclopedia" published by Shufu to Seikatsusha, and as shown in Figure 2, it consists of a light emitting diode (hereinafter abbreviated as LED) and an LED, which are transmitters.
The drive circuit includes an input buffer circuit (waveform shaping circuit) 11, an LED drive circuit 12, a constant current source reference voltage generation circuit 13, and a low current source reference voltage generation circuit 14. LED15
16.33 is the positive power supply terminal, 17.18 is the LED signal output terminal, 19°20 is the current source connection terminal, 2
1.22 is a monitor signal terminal, 23 is an LED drive constant current reference voltage terminal, 33 is an internal circuit constant current source terminal, 25.26
is a negative power supply terminal, 27 is an internal circuit constant current source adjustment terminal, 1
8 is the input cover sofa voltage monitor, 29 is the output cutoff terminal, 3
0.32 is the signal input reference voltage W! 4 terminals, 31 is a signal input.
実際には、第２図に示した構成要素を集積化し基板上に
実装される。第３図に実装図を示す、３３は、第２図に
て説明した入力バッファ回路ＬＥＤ駆動回路１２、定電
流源基準電圧発生回路１３．１４で構成される送信部集
積回路であり、３４はＬＥＤ駆動用の小型トランジスタ
である。Actually, the components shown in FIG. 2 are integrated and mounted on a substrate. The implementation diagram is shown in FIG. 3. Reference numeral 33 is a transmitter integrated circuit composed of the input buffer circuit LED drive circuit 12 and the constant current source reference voltage generation circuit 13 and 14 explained in FIG. This is a small transistor for driving LEDs.
第４図は、受信部であるフォトダイオード（以下ＰＤと
略す）および受信増幅器のブロック図である。３５はＰ
Ｄ、３６は前置増幅器、３７は主増幅器、３８はＥＣＬ
バッファ、３９は定電圧源、４ｏは定電圧源、４１はオ
フセット補償回路、４２は出力ラッチ回路、４３は入力
断検出回路である。また４４は久方断検出レベル調整端
子、 ４５．４６．５７は正電源端子、４７は正相信号
出力、４８は逆相信号出力、４９は入力断検出出力端子
、５０は出力ラッチ信号入力端子。FIG. 4 is a block diagram of a photodiode (hereinafter abbreviated as PD) which is a receiving section and a receiving amplifier. 35 is P
D, 36 is preamplifier, 37 is main amplifier, 38 is ECL
39 is a constant voltage source, 4o is a constant voltage source, 41 is an offset compensation circuit, 42 is an output latch circuit, and 43 is an input disconnection detection circuit. Further, 44 is a long disconnection detection level adjustment terminal, 45, 46, 57 is a positive power supply terminal, 47 is a positive phase signal output, 48 is a negative phase signal output, 49 is an input disconnection detection output terminal, and 50 is an output latch signal input terminal. .
５１．６１は定電圧源出力端子、５２．５３はオフセッ
ト補償回路・積分器出力端子、 ５４．５５は負電源端
子、５６は信号入力端子、５８は前置増幅器出力端子、
５９゜６０は主増幅器入力端子、６２．６３は入力断検
出回路・積分器出力である。51.61 is a constant voltage source output terminal, 52.53 is an offset compensation circuit/integrator output terminal, 54.55 is a negative power supply terminal, 56 is a signal input terminal, 58 is a preamplifier output terminal,
Reference numerals 59 and 60 are main amplifier input terminals, and 62 and 63 are input disconnection detection circuit/integrator outputs.
実際には、第４図に示した構成要素を集積化し基板上に
実装される。第５図に実装図を示す、６４は、第４図に
説明した前置増幅器３６．主増幅器３７゜ＥＣＬバッフ
ァ３８．オフセット補償回路４１．出方ラッチ回路４２
．入力断検出回路４３．定電圧源３９゜４０で構成され
る受信部集積回路である。Actually, the components shown in FIG. 4 are integrated and mounted on a substrate. A mounting diagram is shown in FIG. 5, and 64 is the preamplifier 36 . Main amplifier 37°ECL buffer 38. Offset compensation circuit 41. Output latch circuit 42
．． Input disconnection detection circuit 43. This is a receiver integrated circuit consisting of a constant voltage source 39°40.
第６図は、第２図および第３図に示した集積化送信部と
第４図および第５図に示した集積化受信部とを一体化し
た光伝送モジュールの断面図を示す。FIG. 6 shows a cross-sectional view of an optical transmission module in which the integrated transmitter shown in FIGS. 2 and 3 and the integrated receiver shown in FIGS. 4 and 5 are integrated.
６５は受信部集積回路、６６は送信部集積回路、６７は
受信部集積回路設置用基板、６８は送信部集積回路設置
用基板、６９は遮へい板、７０はケースである。65 is a receiver integrated circuit, 66 is a transmitter integrated circuit, 67 is a board for installing the receiver integrated circuit, 68 is a board for installing the transmitter integrated circuit, 69 is a shielding plate, and 70 is a case.
前記集積回路６５．６６を電気的に分離するために、銅
箔の遮へい板６９を設けている。A copper foil shielding plate 69 is provided to electrically isolate the integrated circuits 65 and 66.
また、ＬＥＤＬ５を接続するパターンとＰＤ３５を接続
するパターンをできる限り離すようにし、受信部集積回
路６５とＰＤ３５との距離をできる限り近づけるような
構造となっている。Further, the pattern connecting the LEDL 5 and the pattern connecting the PD 35 are separated as much as possible, and the structure is such that the distance between the receiver integrated circuit 65 and the PD 35 is made as close as possible.
上記従来構造では、受信部の信号レベルに対して、送信
部の信号レベルが非常に大きいため、送受信動作時のク
ロストークや送信漏話が生じ問題となっていた。In the conventional structure described above, the signal level of the transmitting section is much higher than the signal level of the receiving section, which causes problems such as crosstalk and transmission crosstalk during transmitting and receiving operations.
本発明の目的は、上記のようなりロストークや送信漏話
を低減する光伝送モジュールの構成を提供することにあ
る。An object of the present invention is to provide an optical transmission module configuration that reduces losstalk and transmission crosstalk as described above.
上記目的は、送受信集積回路を設置する両基板の間に挿
入する金属箔の代わりに超電導体セラミックスを、さら
に送受信部を囲むケースに超電導体セラミックスを用い
ることにより達成される。The above object is achieved by using superconducting ceramics in place of the metal foil inserted between the two substrates on which the transmitting/receiving integrated circuit is installed, and by using superconducting ceramics for the case surrounding the transmitting/receiving section.
本発明の光伝送モジュールは、遮へい板を電気抵抗が原
理的に零となる超電導体セラミックス光伝送モジュール
の遮へい板やケースとして用いることにより、シールド
効果を向上させることができる。In the optical transmission module of the present invention, the shielding effect can be improved by using the shielding plate as a shielding plate or case of a superconducting ceramic optical transmission module whose electrical resistance is theoretically zero.
以下、本発明を実施例によって詳細に説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図（ａ）、 （ｂ）は、いずれも本発明による光伝
送モジュールの一実施例を示す図で、第１図（ａ）は見
取図（斜視図）、第１図（ｂ）は断面図である。1(a) and 1(b) are views showing an embodiment of the optical transmission module according to the present invention, FIG. 1(a) is a sketch (perspective view), and FIG. 1(b) is a cross-sectional view. It is a diagram.
１は送信用ＬＥＤ、２は受信用ＰＤ、３は受信部集積回
路基板、４は送信部集積回路基板、５は送信部と受信部
とを電気的に分離する遮へい板で、その材質は超電導体
セラミックスで構成され、６はケースで、その材質は超
電導体セラミックスで構成され、７はケースのふたで、
その材質は超電導体セラミックスで構成されている。８
は光ファイバ挿入用ＳＴレセプタクル、９は足ピンであ
る。1 is a transmitting LED, 2 is a receiving PD, 3 is a receiving integrated circuit board, 4 is a transmitting integrated circuit board, and 5 is a shielding plate that electrically separates the transmitting part and the receiving part, and its material is superconducting. 6 is a case, the material is made of superconducting ceramics, 7 is a lid of the case,
Its material is composed of superconducting ceramics. 8
9 is an ST receptacle for inserting an optical fiber, and 9 is a foot pin.
前記した超電導体としては、当初、単一金属、たとえば
、水銀、アルミニウム、亜鉛などについて検討されたが
、いずれも臨界温度が液体ヘリウムの沸点（４，２Ｋ）
近傍であるが、その後、合金。Initially, single metals such as mercury, aluminum, and zinc were considered as superconductors, but the critical temperature for all of them was the boiling point of liquid helium (4.2 K).
Nearby, but then alloy.
炭化物、窒化物などについて検討され、最近では、イツ
トリウム・バリウム・銅酸化物なとペロブスカイト型の
結晶構造をもつセラミックスについて検討されている。Carbides, nitrides, etc. have been studied, and recently ceramics with a perovskite crystal structure, such as yttrium, barium, and copper oxides, have been studied.
これらペロブスカイト型結晶構造のセラミックスでは、
臨界温度が液体窒素の沸点（７７，４Ｋ ）まで高めら
れることが確認され、室温および室温以上で超電導現象
を示す物質発見の可能性がでてきた。In these ceramics with perovskite crystal structure,
It has been confirmed that the critical temperature can be raised to the boiling point of liquid nitrogen (77.4K), raising the possibility of discovering materials that exhibit superconductivity at room temperature and above room temperature.
超電導体は、上記の臨界温度ばかりでなく、臨界磁場（
超電導現象が崩れる磁場の強さ）、臨界電流密度も重要
である。ペロブスカイト型セラミックスは、臨界電流密
度が小さいとされていたが。Superconductors are sensitive not only to the above-mentioned critical temperature but also to a critical magnetic field (
The strength of the magnetic field at which the superconducting phenomenon collapses) and the critical current density are also important. Perovskite ceramics were thought to have a low critical current density.
最近では改善されて、１０３Ａ ／ ｃＪ程度のものが
得られている。また、薄膜にすると１０’ Ａ ／ ｃ
ｄが得られたとの報告（ＩＢＭワトソン研究所）がある
。Recently, it has been improved to about 103A/cJ. Also, when made into a thin film, 10' A/c
There is a report (IBM Watson Research Center) that d was obtained.
多層膜にすると、臨界電流密度はさらに上昇する。If a multilayer film is used, the critical current density will further increase.
臨界磁場に関しては、現在まで１テラス程度のものが得
られており、問題ないものと考えられる。Regarding the critical magnetic field, a value of about 1 terrace has been obtained so far, and it is considered that there is no problem.
ペロブスカイト型超電導体セラミックスの製法は、チタ
ン酸バリウム、ジルコン酸鉛など圧電体セラミックスと
類似の方法で行なえる。Perovskite superconducting ceramics can be manufactured using methods similar to piezoelectric ceramics such as barium titanate and lead zirconate.
すなわち、原料の秤量→混合・粉末の均質化→仮焼（粉
末状での加熱）→粉末の均質化→成型→焼結の手順で行
なう。薄膜化には、蒸着、スパッタ、ＣＶＤなどの方法
によって行なえる。特にスパッタ法では、上記の超電導
体セラミックスをターゲットとして用いると、ターゲッ
トとほぼ同じ組成の薄膜を得ることができる。That is, the procedure is as follows: weighing of raw materials → mixing and homogenization of powder → calcination (heating in powder form) → homogenization of powder → molding → sintering. The film can be made thinner by methods such as vapor deposition, sputtering, and CVD. Particularly in the sputtering method, when the above-mentioned superconducting ceramics are used as a target, a thin film having almost the same composition as the target can be obtained.
以上、光伝送モジュールについて説明してきたが、他の
モジュールについても適用可能であることは明らかであ
る。Although the optical transmission module has been described above, it is clear that the present invention can also be applied to other modules.
本実施例によれば、遮へい板やケースに超電導体セラミ
ックスを用いることにより、送受動作時におけるクロス
ストークや送信漏話を低減することができる。According to this embodiment, crosstalk and transmission crosstalk during transmission and reception operations can be reduced by using superconducting ceramics for the shielding plate and the case.
請求項１記載の光伝送モジュールによれば下記の効果が
ある。The optical transmission module according to the first aspect has the following effects.
ｉ）遮へい板の電気抵抗を原理的に零にすることができ
るので、送信部と受信部のシールド効果が向上し、送受
信動作時のクロストークや送信漏話を低減することがで
きる。i) Since the electrical resistance of the shielding plate can be reduced to zero in principle, the shielding effect between the transmitting section and the receiving section is improved, and crosstalk and transmission crosstalk during transmitting and receiving operations can be reduced.
ｉｉ）モジュールケースの電気抵抗を原理的に零にする
ことができるので、外部からのシールド効果が向上し、
雑音信号等の影響を低減することができる。ii) Since the electrical resistance of the module case can be reduced to zero in principle, the shielding effect from the outside is improved.
The influence of noise signals and the like can be reduced.
第１図（ａ）、 （ｂ）は、それぞれ本発明の一実施例
の見取図（斜視図）および断面図、第２〜第６図は従来
技術を説明するための図で、第２図、第３図は、それぞ
れ送信部のブロック図および実装図、第４図、第５図は
それぞれ受信部のブロック図および実装図、第６図は送
信部と受信部を一体化したモジュールの断面図である。１・・・送信用ＬＥＤ： ２・・・受信用ＰＤ、３・・
・受信部集積回路基板、４・・・送信部集積回路基板、
５・・・遮へい板、６・・・ケース、７・・・ケースの
ふた、８・・・ＳＴレセプタクル、９・・・足ピン。第図 （ａ）特許出願人 日立湘南電子株式会社代理人弁理士
秋 本 正 実（外１名）１−−一送信ＭＬＥＤ２−ｍ−受信用ＰＤ３−−一愛河Ｖ某慣回路（仮４−謎侶梵粂襦母片を欧５−Ｌ〜い孜６−°−ケ＝スフ°−−γ−λの、ＪＪＣ８−−−ＳＴ し七プタクーレ９−−−ＪＬピッ（ｂ）３３−−− Ｌ４’；ｙ ＩＦ’ ＳＲＤ ％３４−−
−ＬＥＤ、駆動用小型トランジスタ第２図第４図３５−−−フス）り”（Ｊ−）” ３８・−−Ｅ
ＣＬｎ”７７ｙ ４１−−−７７１！Ｊ！ｆｌｌ
ｉｊ１％３６−−−豹！Ｉ壇幅為 ３９−−一芝電丘
漂（１） ４２−−一比カラ、ケ回降３７− 工ｉ
Ｈ％Ｒ４０一定ＩＡ７． （２） ４３−）ＪＪ＊＆
？１．回跨第５図第６ 図６４−ｍ−受信ｆと集積置局６５− 交瘍ａ臭＃固路 ６８−−一般１用基」炙６
ローーー透消舒簾＃回路 ６９−−一韻洒遅へい榎６フ
ーーー訳置用萎孜 ７９−−−ケース手続補正書
輸発）昭和６３年１２月１５日FIGS. 1(a) and 1(b) are a sketch (perspective view) and a sectional view of an embodiment of the present invention, respectively, and FIGS. 2 to 6 are diagrams for explaining the prior art. Figure 3 is a block diagram and implementation diagram of the transmitter, Figures 4 and 5 are a block diagram and implementation diagram of the receiver, respectively, and Figure 6 is a sectional view of a module that integrates the transmitter and receiver. It is. 1... LED for transmission: 2... PD for reception, 3...
・Receiving unit integrated circuit board, 4... transmitting unit integrated circuit board,
5... Shielding plate, 6... Case, 7... Case lid, 8... ST receptacle, 9... Foot pin. Figure (a) Patent applicant Patent attorney representing Hitachi Shonan Electronics Co., Ltd.
Masami Akimoto (1 other person) 1--1 transmitting MLED 2-m-receiving PD 3--1 Aikawa V certain customary circuit (temporary 4-Mystery Bonkei Shubo piece in Europe 5-L~ Kei) 6-°-Ke=Suf°--γ-λ, JJC 8---ST Shichiputakoule 9--JL Pi(b) 33--- L4';y IF' SRD %34--
-LED, small transistor for driving Fig. 2 Fig. 4 35--Fus)ri"(J-)" 38・--E
CLn”77y 41---771!J!fll
ij1%36---Leopard! Idan width 39--Ichishibadenkyuori (1) 42--Ichihikara, keaiku 37-Ku i
H%R40 constant IA7. (2) 43-)JJ*&
? 1. Circulation Figure 5 Figure 6 Figure 64-m-Reception f and collection station 65-Odor #solid route 68--General 1 base'' Roasted 6
Low--transparent blind #circuit 69--One rhyme pun late hei Enoki 6 Fu--Translation use 79--Case procedure amendment export) December 15, 1988
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63266155AJPH02113598A (en) | 1988-10-24 | 1988-10-24 | optical transmission module |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63266155AJPH02113598A (en) | 1988-10-24 | 1988-10-24 | optical transmission module |
| Publication Number | Publication Date |
|---|---|
| JPH02113598Atrue JPH02113598A (en) | 1990-04-25 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63266155APendingJPH02113598A (en) | 1988-10-24 | 1988-10-24 | optical transmission module |
| Country | Link |
|---|---|
| JP (1) | JPH02113598A (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5535034A (en)* | 1993-12-08 | 1996-07-09 | Fujitsu Limited | Optical transceiver unit |
| JP2006027601A (en)* | 2004-07-15 | 2006-02-02 | Campagnolo Spa | Sprocket holding element for bicycle rear wheel |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5535034A (en)* | 1993-12-08 | 1996-07-09 | Fujitsu Limited | Optical transceiver unit |
| JP2006027601A (en)* | 2004-07-15 | 2006-02-02 | Campagnolo Spa | Sprocket holding element for bicycle rear wheel |
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