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JPH02103925U - - Google Patents

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Publication number
JPH02103925U
JPH02103925UJP1271689UJP1271689UJPH02103925UJP H02103925 UJPH02103925 UJP H02103925UJP 1271689 UJP1271689 UJP 1271689UJP 1271689 UJP1271689 UJP 1271689UJP H02103925 UJPH02103925 UJP H02103925U
Authority
JP
Japan
Prior art keywords
level
enable signal
input
output
outputs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1271689U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP1271689UpriorityCriticalpatent/JPH02103925U/ja
Publication of JPH02103925UpublicationCriticalpatent/JPH02103925U/ja
Pendinglegal-statusCriticalCurrent

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Description

Translated fromJapanese
【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案に係わる制御信号発生回路、第
2図は第1図の各部波形図、第3図は本考案の別
の実施例回路図、第4図及び第5図は従来の制御
信号発生回路である。 11…セキユリテイ本体、12…ドアロツク検
出部、13a,13b…第1、第2のレベル設定
部、13c…出力レベル可変部、13d…コンパ
レータ、13f…イネーブル信号入力端子、EN
H…ハイレベルのイネーブル信号、ENL…ロー
レベルのイネーブル信号。
FIG. 1 is a control signal generation circuit according to the present invention, FIG. 2 is a waveform diagram of each part of FIG. 1, FIG. 3 is a circuit diagram of another embodiment of the present invention, and FIGS. 4 and 5 are conventional control signals. This is a signal generation circuit. DESCRIPTION OF SYMBOLS 11... Security main body, 12... Door lock detection part, 13a, 13b... First and second level setting part, 13c... Output level variable part, 13d... Comparator, 13f... Enable signal input terminal, EN
H...High level enable signal, ENL...Low level enable signal.

Claims (1)

Translated fromJapanese
【実用新案登録請求の範囲】(1) ハイレベルのイネーブル信号とローレベル
のイネーブル信号が入力される端子と、 イネーブル信号がない時、一定の第1レベルL
1及び第2レベルL2(L1>L2)を設定する
第1、第2レベル設定部と、 ローレベル信号入力時に第1レベル設定部の出
力レベル1をL1からL2以下にし、所定時間
後にL2以上にする第1の出力レベル可変部と、 ハイレベル信号入力時に第2レベル設定部の出
力レベルV2をL2からL1以上にし、所定時間
後にL1以下にする第2の出力レベル可変部と、 第1、第2の出力レベルV1,V2の大小を比
較して制御信号を出力するコンパレータを備えて
成ることを特徴とする制御信号発生回路。(2) ハイレベルのイネーブル信号とローレベル
のイネーブル信号が入力される端子と、 第1、第2のバイアス電圧を設定するバイアス
電圧設定部と、 第1のバイアス電圧により通常オンして第1の
論理レベルを出力し、ハイレベルのイネーブル信
号入力時にオフして他の第2の論理レベルを出力
する第1の半導体回路と、 第2のバイアス電圧により通常オンして第1の
論理レベルを出力し、ローレベルのイネーブル信
号入力時にオフして第2の論理レベルを出力する
第2の半導体回路と、 第1、第2の半導体回路出力を用いてイネーブ
ル信号入力時に制御信号を出力する論理回路を備
えて成ることを特徴とする制御信号発生回路。
[Claims for Utility Model Registration] (1) A terminal to which a high-level enable signal and a low-level enable signal are input, and a constant first level L when there is no enable signal.
The first and second level setting sections set the first and second levels L2 (L1>L2), and when the low level signal is input, the output level 1 of the first level setting section is set from L1 to below L2, and after a predetermined time, the output level 1 is set above L2. a first output level variable section that increases the output level V2 of the second level setting section from L2 to above L1 when a high level signal is input, and sets it below L1 after a predetermined time; , a comparator that compares the magnitudes of second output levels V1 and V2 and outputs a control signal. (2) A terminal into which a high-level enable signal and a low-level enable signal are input; a bias voltage setting section that sets the first and second bias voltages; a first semiconductor circuit that outputs a logic level of 1 and turns off when a high-level enable signal is input and outputs another second logic level; a second semiconductor circuit that outputs an output and turns off when a low-level enable signal is input to output a second logic level; and a logic that outputs a control signal when an enable signal is input using the first and second semiconductor circuit outputs. A control signal generation circuit comprising a circuit.
JP1271689U1989-02-061989-02-06PendingJPH02103925U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP1271689UJPH02103925U (en)1989-02-061989-02-06

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP1271689UJPH02103925U (en)1989-02-061989-02-06

Publications (1)

Publication NumberPublication Date
JPH02103925Utrue JPH02103925U (en)1990-08-17

Family

ID=31222409

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP1271689UPendingJPH02103925U (en)1989-02-061989-02-06

Country Status (1)

CountryLink
JP (1)JPH02103925U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7081938B1 (en)1993-12-032006-07-25Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for manufacturing the same
US7214555B2 (en)1995-03-182007-05-08Semiconductor Energy Laboratory Co., Ltd.Method for producing display device
US7462519B2 (en)1994-12-272008-12-09Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, method of fabricating same, and, electrooptical device
US7554616B1 (en)1992-04-282009-06-30Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7554616B1 (en)1992-04-282009-06-30Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the same
US7081938B1 (en)1993-12-032006-07-25Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for manufacturing the same
US7564512B2 (en)1993-12-032009-07-21Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for manufacturing the same
US7462519B2 (en)1994-12-272008-12-09Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, method of fabricating same, and, electrooptical device
US7504660B2 (en)1994-12-272009-03-17Semiconductor Energy Laboratory Co., Ltd.Semiconductor device, method of fabricating same, and, electrooptical device
US7214555B2 (en)1995-03-182007-05-08Semiconductor Energy Laboratory Co., Ltd.Method for producing display device

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