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JPH01154511U - - Google Patents

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Publication number
JPH01154511U
JPH01154511UJP4961488UJP4961488UJPH01154511UJP H01154511 UJPH01154511 UJP H01154511UJP 4961488 UJP4961488 UJP 4961488UJP 4961488 UJP4961488 UJP 4961488UJP H01154511 UJPH01154511 UJP H01154511U
Authority
JP
Japan
Prior art keywords
recess
disk substrate
annular
peripheral edge
disk
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4961488U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filedfiledCritical
Priority to JP4961488UpriorityCriticalpatent/JPH01154511U/ja
Publication of JPH01154511UpublicationCriticalpatent/JPH01154511U/ja
Pendinglegal-statusCriticalCurrent

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Description

Translated fromJapanese
【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの考案の一実施例を示す磁気デイス
クの断面図、第2図は同デイスク基板の平面図、
第3図は磁気シートの変形量の比較説明図、第4
図は従来例の磁気デイスクの断面図である。 1……磁気デイスク、2……デイスク基板、2
a……内周縁部、2b……外周縁部、4……凹部
、5……磁気シート、6,7,8……流体ガイド
FIG. 1 is a sectional view of a magnetic disk showing an embodiment of this invention, FIG. 2 is a plan view of the disk substrate,
Figure 3 is a comparative explanatory diagram of the amount of deformation of the magnetic sheet, Figure 4
The figure is a sectional view of a conventional magnetic disk. 1...Magnetic disk, 2...Disk substrate, 2
a... Inner peripheral edge, 2b... Outer peripheral edge, 4... Recess, 5... Magnetic sheet, 6, 7, 8... Fluid guide.

Claims (1)

Translated fromJapanese
【実用新案登録請求の範囲】 環状のデイスク基板の少なくとも片面に環状の
ヘツド逃げ用の凹部を形成し、この凹部を閉塞す
るように該デイスク基板の内周縁部から外周縁部
にかけてフレキシブルな環状の磁気シートを張設
した磁気デイスクにおいて、 前記デイスク基板の凹部に流体ガイドを突出形
成したことを特徴とする磁気デイスク。
[Claims for Utility Model Registration] An annular head relief recess is formed on at least one side of an annular disk substrate, and a flexible annular recess is formed from the inner peripheral edge to the outer peripheral edge of the disk substrate so as to close the recess. 1. A magnetic disk on which a magnetic sheet is stretched, characterized in that a fluid guide is formed protrudingly in a recessed portion of the disk substrate.
JP4961488U1988-04-131988-04-13PendingJPH01154511U (en)

Priority Applications (1)

Application NumberPriority DateFiling DateTitle
JP4961488UJPH01154511U (en)1988-04-131988-04-13

Applications Claiming Priority (1)

Application NumberPriority DateFiling DateTitle
JP4961488UJPH01154511U (en)1988-04-131988-04-13

Publications (1)

Publication NumberPublication Date
JPH01154511Utrue JPH01154511U (en)1989-10-24

Family

ID=31275702

Family Applications (1)

Application NumberTitlePriority DateFiling Date
JP4961488UPendingJPH01154511U (en)1988-04-131988-04-13

Country Status (1)

CountryLink
JP (1)JPH01154511U (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US6911391B2 (en)2002-01-262005-06-28Applied Materials, Inc.Integration of titanium and titanium nitride layers
US6951804B2 (en)2001-02-022005-10-04Applied Materials, Inc.Formation of a tantalum-nitride layer
US7049226B2 (en)2001-09-262006-05-23Applied Materials, Inc.Integration of ALD tantalum nitride for copper metallization
US7085616B2 (en)2001-07-272006-08-01Applied Materials, Inc.Atomic layer deposition apparatus
US7208413B2 (en)2000-06-272007-04-24Applied Materials, Inc.Formation of boride barrier layers using chemisorption techniques

Cited By (7)

* Cited by examiner, † Cited by third party
Publication numberPriority datePublication dateAssigneeTitle
US7208413B2 (en)2000-06-272007-04-24Applied Materials, Inc.Formation of boride barrier layers using chemisorption techniques
US7501343B2 (en)2000-06-272009-03-10Applied Materials, Inc.Formation of boride barrier layers using chemisorption techniques
US7501344B2 (en)2000-06-272009-03-10Applied Materials, Inc.Formation of boride barrier layers using chemisorption techniques
US6951804B2 (en)2001-02-022005-10-04Applied Materials, Inc.Formation of a tantalum-nitride layer
US7085616B2 (en)2001-07-272006-08-01Applied Materials, Inc.Atomic layer deposition apparatus
US7049226B2 (en)2001-09-262006-05-23Applied Materials, Inc.Integration of ALD tantalum nitride for copper metallization
US6911391B2 (en)2002-01-262005-06-28Applied Materials, Inc.Integration of titanium and titanium nitride layers

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