JP3700502B2 - Light emitting diode - Google Patents
Light emitting diodeDownload PDFInfo
- Publication number
- JP3700502B2 JP3700502B2JP33129399AJP33129399AJP3700502B2JP 3700502 B2JP3700502 B2JP 3700502B2JP 33129399 AJP33129399 AJP 33129399AJP 33129399 AJP33129399 AJP 33129399AJP 3700502 B2JP3700502 B2JP 3700502B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting diode
- phosphor
- emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7767—Chalcogenides
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/20—Luminescent screens characterised by the luminescent material
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
- G02B6/0025—Diffusing sheet or layer; Prismatic sheet or layer
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0033—Means for improving the coupling-out of light from the light guide
- G02B6/005—Means for improving the coupling-out of light from the light guide provided by one optical element, or plurality thereof, placed on the light output side of the light guide
- G02B6/0051—Diffusing sheet or layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
- H10H20/8513—Wavelength conversion materials having two or more wavelength conversion materials
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/882—Scattering means
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Planar Illumination Modules (AREA)
- Liquid Crystal (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
- Optical Filters (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of El Displays (AREA)
- Surgical Instruments (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
Abstract
Description
Translated fromJapanese【０００１】
【発明の属する技術分野】
本発明は、ＬＥＤディスプレイ、バックライト光源、信号機、照光式スイッチ及び各種インジケータなどに利用される発光ダイオードに関し、特に発光素子が発生する光の波長を変換して発光するフォトルミネセンス蛍光体を備えた発光ダイオードに関する。
【０００２】
【従来の技術】
発光ダイオードは、小型で、効率が良く鮮やかな色の光の発光が可能で、半導体素子であるため、球切れの心配がなく、初期駆動特性及び耐震性に優れ、さらにＯＮ／ＯＦＦ点灯の繰り返しに強いという特長を有する。そのため、各種インジケータや種々の光源として広く利用されている。また、最近では、超高輝度、高効率なＲＧＢ(赤、緑、青色)の発光ダイオードがそれぞれ開発され、これらの発光ダイオードを用いた大画面のＬＥＤディスプレーが使用されるようになった。このＬＥＤディスプレーは、少ない電力で動作させることができ、軽量でしかも長寿命であるという優れた特性を有し、今後益々使用されるものと期待される。
【０００３】
さらに、最近では、発光ダイオードを用いて、白色発光光源を構成する試みが種々なされている。発光ダイオードを用いて白色光を得るためには、発光ダイオードが単色性ピーク波長を有するので、例えば、Ｒ、Ｇ、Ｂの３つの発光素子を近接して設けて発光させて拡散混色する必要がある。このような構成によって白色光を発生させようとした場合、発光素子の色調や輝度等のバラツキにより所望の白色を発生させることができないという問題点があった。また、発光素子がそれぞれ異なる材料を用いて形成されている場合、各発光素子の駆動電力などが異なり個々に所定の電圧を印加する必要があり、駆動回路が複雑になるという問題点があった。さらに、発光素子が半導体発光素子であるため、個々に温度特性や経時変化が異なり、色調が使用環境によって変化したり、各発光素子によって発生される光を均一に混色させる事ができずに色むらを生ずる場合がある等の多くの問題点を抱えていた。すなわち、発光ダイオードは、個々の色を発光させる発光装置としては有効であったが、発光素子を用いて白色光を発生させることができる満足な光源は得られていなかった。
【０００４】
そこで、本出願人は先に発光素子によって発生された光が、蛍光体で色変換されて出力される発光ダイオードを、特開平５−１５２６０９号公報、特開平７−９９３４５号公報、特開平７−１７６７９４号公報、特開平８−８６１４号公報などにおいて発表した。これらに開示された発光ダイオードは、１種類の発光素子を用いて白色系など他の発光色を発光させることができるというものであり、以下のように構成される。
上記公報に開示された発光ダイオードは、具体的には、発光層のエネルギーバンドギャッブが大きい発光素子をリードフレームの先端に設けられたカップ上に配置し、発光素子を被覆する樹脂モールド部材中に発光素子からの光を吸収して、吸収した光と波長の異なる光を発光する（波長変換）蛍光体を含有させて構成する。
【０００５】
上述の開示された発光ダイオードにおいて、発光素子として、青色系の発光が可能な発光素子を用いて、該発光素子をその発光を吸収して黄色系の光を発光する蛍光体を含有した樹脂によってモールドすることにより、混色により白色系の光が発光可能な発光ダイオードを作製することができる。
【０００６】
【発明が解決しようとする課題】
【０００７】
【０００８】
しかしながら、従来の発光ダイオードは以下のような問題点もあった。
すなわち、従来の発光ダイオードは、蛍光体の劣化によって色調がずれたり、あるいは蛍光体が黒ずみ光の外部取り出し効率が低下する場合があるという問題点があった。ここで、黒ずむというのは、例えば、（Ｃｄ，Ｚｎ）Ｓ蛍光体等の無機系の蛍光体を用いた場合には、この蛍光体を構成する金属元素の一部が析出したり変質したりして着色することであり、また、有機系の蛍光体材料を用いた場合には、２重結合が切れる等により着色することをいう。特に、発光素子である高エネルギーバンドギャッブを有する半導体を用い、蛍光体の変換効率を向上させた場合（すなわち、半導体によって発光される光のエネルギーが高くなり、蛍光体が吸収することができるしきい値以上の光が増加し、より多くの光が吸収されるようになる。）、又は蛍光体の使用量を減らした場合（すなわち、相対的に蛍光体に照射されるエネルギー量が多くなる。）等においては、蛍光体が吸収する光のエネルギーが必然的に高くなるので、蛍光体の劣化が著しい。
また、発光素子の発光強度を更に高め長期にわたって使用すると、蛍光体の劣化がさらに激しくなる。
【０００９】
また、発光素子の近傍に設けられた蛍光体は、発光素子の温度上昇や外部環境（例えば、屋外で使用された場合の太陽光によるもの等）によって高温にもさらされ、この熱によって劣化する場合がある。
さらに、蛍光体によっては、外部から侵入する水分や、製造時に内部に含まれた水分と、上記光及び熱とによって、劣化が促進されるものもある。 またさらに、イオン性の有機染料を使用すると、チップ近傍では直流電界により電気泳動を起こし、色調が変化する場合がある等である。
【００１０】
【課題を解決するための手段】
本発明に係る発光ダイオードは、以下のように構成される。
すなわち、量子井戸構造をとると共に、発光層がＩｎを含む窒化ガリウム系半導体から成り、４２０〜４９０ｎｍの範囲に発光スペクトルのピークを有するＬＥＤチップと、
前記ＬＥＤチップの近傍に配置された透光性樹脂と、
前記透光性樹脂に含有されるフォトルミネッセンスの蛍光体であって、前記ＬＥＤチップの青色発光を一部吸収して、５３０〜５７０ｎｍにピークを有し、少なくとも７００ｎｍまで裾をひく発光スペクトルを発光可能であり、ガーネット構造をとると共にセリウムを含有するフォトルミネッセンスの蛍光体と、を具え、
前記ＬＥＤチップから出て前記フォトルミネッセンスの蛍光体に吸収されずに通過した光の発光スペクトルと、前記フォトルミネッセンスの蛍光体から出た光の発光スペクトルとが互いに重なり合い、両発光スペクトルの混合により白色系の光を発光可能なことを特徴とする発光ダイオード。
【００１１】
【００１２】
【００１３】
【００１４】
【００１５】
【００１６】
【００１７】
本発明の発光ダイオードは、高輝度の発光が可能な窒化ガリウム系化合物半導体からなる発光素子を用いているので、高輝度の発光をさせることができる。また、該発光ダイオードにおいて、使用している前記フォトルミネッセンス蛍光体は、長時間、強い光にさらされても蛍光特性の変化が少ない極めて耐光性に優れたものを用いることにより、長時間の使用に対して特性劣化を少なくでき、発光素子からの強い光のみならず、野外使用時等における外来光（紫外線を含む太陽光等）による劣化も少なくでき、色ずれや輝度低下が極めて少ない発光ダイオードを提供できる。
【００１８】
また、この本発明の発光装置は、使用している前記フォトルミネッセンス蛍光体が、短残光であると、例えば、１２０ｎｓｅｃという比較的速い応答速度が要求される用途にも使用することができる。
【００１９】
【００２０】
【００２１】
【００２２】
【００２３】
【００２４】
【００２５】
【００２６】
また、一般的に蛍光体では、短波長の光を吸収して長波長の光を発光するものの方が、長波長の光を吸収して短波長の光を発光するものに比較して効率がよい。発光素子としては、樹脂（モールド部材やコーティング部材等）を劣化させる紫外光を発光するものより可視光を発光するものを用いる方が好ましい。従って、本発明の発光ダイオードにおいては、発光効率の向上及び長寿命化のために、前記発光素子の発光スペクトルの主ピークを、可視光のうちで比較的短波長の４２０ｎｍから４９０ｎｍの範囲内に設定し、かつ前記フォトルミネッセンス蛍光体の主発光波長を前記発光素子の主ピークより長く設定することが好ましい。また、このようにすることにより、蛍光体により変換された光は、発光素子が発光する光よりも長波長であるため、蛍光体等により反射された変換後の光が発光素子に照射されても、発光素子によって吸収されることはない（バンドギャップエネルギーより変換された光のエネルギーの方が小さいため）。このように、蛍光体等により反射された光は、発光素子を載置したカップにより反射され、さらに効率のよい発光が可能になる。
【００２７】
【発明の実施の形態】
以下、図面を参照して本発明の実施形態の説明をする。
図１の発光ダイオード１００は、マウント・リード１０５とインナーリード１０６とを備えたリードタイプの発光ダイオードであって、マウント・リード１０５のカップ部１０５ａ上に発光素子１０２が設けられ、カップ部１０５ａ内に、発光素子１０２を覆うように、所定のフォトルミネッセンス蛍光体を含むコーティング樹脂１０１が充填された後に、樹脂モールドされて構成される。ここで、発光素子１０２のｎ側電極及びｐ側電極はそれぞれ、マウント・リード１０５とインナーリード１０６とにワイヤー１０３を用いて接続される。
【００２８】
以上のように構成された発光ダイオードにおいては、発光素子（ＬＥＤチップ）１０２によって発光された光（以下、ＬＥＤ光という。）の一部が、コーティング樹脂１０１に含まれたフォトルミネッセンス蛍光体を励起してＬＥＤ光と異なる波長の蛍光を発生させて、フォトルミネッセンス蛍光体が発生する蛍光と、フォトルミネッセンス蛍光体の励起に寄与することなく出力されるＬＥＤ光とが混色されて出力される。その結果、発光ダイオード１００は、発光素子１０２が発生するＬＥＤ光とは波長の異なる光も出力する。
【００２９】
また、図２に示すものはチップタイプの発光ダイオードであって、筺体２０４の凹部に発光素子（ＬＥＤチップ）２０２が設けられ、該凹部に所定のフォトルミネッセンス蛍光体を含むコーティング材が充填されてコーティング部２０１が形成されて構成される。ここで、発光素子２０２は、例えばＡｇを含有させたエポキシ樹脂等を用いて固定され、該発光素子２０２のｎ側電極とｐ側電極とをそれぞれ、筺体２０４に設けられた端子金属２０５に、導電性ワイヤー２０３を用いて接続される。 以上のように構成されたチップタイプの発光ダイオードにおいて、図１のリードタイプの発光ダイオードと同様に、フォトルミネッセンス蛍光体が発生する蛍光と、フォトルミネッセンス蛍光体に吸収されることなく伝搬されたＬＥＤ光とが混色されて出力され、その結果、発光ダイオード２００は、発光素子１０２が発生するＬＥＤ光とは波長の異なる光も出力する。
【００３０】
以上説明したフォトルミネセンス蛍光体を備えた発光ダイオードは、以下のような特徴を有する。
１，通常、発光素子（ＬＥＤ）から放出される光は、発光素子に電力を供給する電極を介して放出される。放出された光は、発光素子に形成された電極の陰となり、特定の発光パターンを有し、そのために全ての方向に均一に放出されない。しかしながら、蛍光体を備えた発光ダイオードは、蛍光体により発光素子からの光を散乱させて光を放出するので、不要な発光パターンを形成することなく、広い範囲に均一に光を放出することができる。
【００３１】
２．発光素子（ＬＥＤ）からの光は、単色性ピークを有するといっても、ある程度のスペクトル幅をもつので演色性が高い。このことは、比較的広い範囲の波長を必要とする光源として使用する場合には欠かせない長所になる。例えば、スキャナーの光源等に用いる場合は、スペクトル幅が広いほうが好ましい。
以下に説明する実施形態１，２の発光ダイオードは、図１又は図２に示す構造を有する発光ダイオードにおいて、可視光域における光エネルギーが比較的高い窒化物系化合物半導体を用いた発光素子と、特定のフォトルミネッセンス蛍光体とを組み合わせたことを特徴とし、これによって、高輝度の発光を可能にし、長時間の使用に対して発光効率の低下や色ずれが少ないという良好な特性を有する。
【００３２】
一般的に蛍光体においては、短い波長の光を吸収して長い波長の光を放出する蛍光体の方が、長い波長の光を吸収して短い光を放出する蛍光体に比較して変換効率が優れているので、本発明の発光ダイオードにおいては、短い波長の青色系の発光が可能な窒化ガリウム系半導体発光素子（発光素子）を用いることが好ましい。また、高い輝度の発光素子を用いることが好ましいことは言うまでもない。
【００３３】
このような窒化ガリウム系半導体発光素子と組み合わせて用いるのに適したフォトルミネセンス蛍光体としては、
１．発光素子１０２，２０２に近接して設けられ、太陽光の約３０倍から４０倍にもおよぶ強い光にさらされることになるので、強い強度の光の照射に対して長時間耐え得るように、耐光性に優れていること。
２．発光素子１０２，２０２によって励起するために、発光素子の発光で効率よく発光すること。特に、混色を利用する場合、紫外線ではなく青色系発光で効率よく発光すること。
３．青色系の光と混色されて白色になるように、緑色系から赤色系の光が発光可能なこと。
４．発光素子１０２，２０２に近接して設けられ、該チップを発光させる際の発熱による温度変化の影響を受けるので、温度特性が良好であること。
５．色調が組成比あるいは複数の蛍光体の混合比を変化させることにより、連続的に変化させることができること。
６．発光ダイオードが使用される環境に応じた耐候性があること、
などの特性が要求される。
【００３４】
実施の形態１．
本発明に係る実施の形態１の発光ダイオードは、発光層に高エネルギーバンドギャッブを有し、青色系の発光が可能な窒化ガリウム系化合物半導体素子と、黄色系の発光が可能なフォトルミネセンス蛍光体である、セリウムで付活されたガーネット系フォトルミネッセンス蛍光体とを組み合わせたものである。これによって、この実施形態１の発光ダイオードにおいて、発光素子１０２，２０２からの青色系の発光と、その発光によって励起されたフォトルミネセンス蛍光体からの黄色系の発光光との混色により白色系の発光が可能になる。
【００３５】
また、この実施形態１の発光ダイオードに用いた、セリウムで付活されたガーネット系フォトルミネッセンス蛍光体は耐光性及び耐候性を有するので、発光素子１０２，２０２から放出された可視光域における高エネルギー光を長時間その近傍で高輝度に照射した場合であっても発光色の色ずれや発光輝度の低下が極めて少ない白色光が発光できる。
以下、本実施形態１の発光ダイオードの各構成部材について詳述する。
【００３６】
(フォトルミネセンス蛍光体)
本実施形態１の発光ダイオードに用いられるフォトルミネセンス蛍光体は、半導体発光層から発光された可視光や紫外線で励起されて、励起した光と異なる波長を有する光を発光するフォトルミネセンス蛍光体である。具体的にはフォトルミネセンス蛍光体として、Ｙ、Ｌｕ、Ｓｃ、Ｌａ、Ｇｄ及びＳｍから選択された少なくとも１つの元素と、Ａｌ、Ｇａ及びＩｎから選択された少なくとも１つの元素とを含み、セリウムで付活されたガーネット系蛍光体である。本発明では、該蛍光体として、ＹとＡｌを含みセリウムで付活されたイットリウム・アルミニウム・ガーネット系蛍光体、又は、一般式（Ｒｅ1-rＳｍr）3（Ａｌ1-sＧａs)5Ｏ12：Ｃｅ(但し、０≦ｒ＜１、０≦ｓ≦１、Ｒｅは、Ｙ、Ｇｄから選択される少なくともー種）であらわされる蛍光体を用いることが好ましい。窒化ガリウム系化合物半導体を用いた発光素子が発光するＬＥＤ光と、ボディーカラーが黄色であるフォトルミネセンス蛍光体が発光する蛍光光が補色関係にある場合、ＬＥＤ光と、蛍光光とを混色して出力することにより、全体として白色系の光を出力することができる。
【００３７】
本実施形態１において、このフォトルミネセンス蛍光体は、上述したように、コーテイング樹脂１０１，コーテイング部２０１を形成する樹脂（詳細は後述する）に混合して使用されるので、窒化ガリウム系発光素子の発光波長に対応させて、樹脂などとの混合比率、若しくはカップ部１０５又は筺体２０４の凹部への充填量を種々調整することにより、発光ダイオードの色調を、白色を含め電球色など任意に設定できる。
【００３８】
このフォトルミネセンス蛍光体の含有分布は、混色性や耐久性にも影響する。例えば、フォトルミネセンス蛍光体が含有されたコーティング部やモールド部材の表面側から発光素子に向かってフォトルミネセンス蛍光体の分布濃度を高くした場合は、外部環境からの水分などの影響をより受けにくくでき、水分による劣化を防止することができる。他方、フォトルミネセンス蛍光体を、発光素子からモールド部材等の表面側に向かって分布濃度が高くなるように分布させると、外部環境からの水分の影響を受けやすいが発光素子からの発熱、照射強度などの影響をより少なくでき、フォトルミネセンス蛍光体の劣化を抑制することができる。このような、フォトルミネセンス蛍光体の分布は、フォトルミネセンス蛍光体を含有する部材、形成温度、粘度やフォトルミネセンス蛍光体の形状、粒度分布などを調整することによって種々の分布を実現することができ、発光ダイオードの使用条件などを考慮して分布状態が設定される。
【００３９】
実施形態１のフォトルミネセンス蛍光体は、発光素子１０２，２０２と接したり、あるいは近接して配置され、照射強度（Ｅｅ）として、３Ｗ・ｃｍ-2以上１０Ｗ・ｃｍ-2以下においても高効率でかつ十分な耐光性を有するので、該蛍光体を用いることにより、優れた発光特性の発光ダイオードを構成することができる。
【００４０】
また、実施形態１のフォトルミネセンス蛍光体は、ガーネット構造を有するので、熱、光及び水分に強く、図３（ａ）に示すように、励起スペクトルのピークを４５０ｎｍ付近にすることができる。また、発光ピークも図３（ｂ）に示すように、５７０ｎｍ付近にあり７００ｎｍまで裾を引くブロードな発光スペクトルを持つ。また、実施形態１のフォトルミネッセンス蛍光体は、結晶中にＧｄを含有することにより、４６０ｎｍ以上の長波長域における励起発光効率を高くすることができる。Ｇｄの含有量の増加により、発光ピーク波長が、長波長に移動し、全体の発光波長も長波長側にシフトする。すなわち、赤みの強い発光色が必要な場合、Ｇｄによる置換量を多くすることで達成することができる。一方、Ｇｄが増加するするとともに、青色光によるフォトルミネッセンスの発光輝度は低下する傾向にある。
【００４１】
特に、ガーネット構造を有するＹＡＧ系蛍光体の組成の内、Ａｌの一部をＧａで置換することで、発光波長が、短波長側にシフトするまた組成のＹの一部をＧｄで置換することにより、発光波長が長波長側にシフトする。 表１に一般式（Ｙ1-aＧｄa）3（Ａｌ1-bＧａb）5Ｏ12：Ｃｅで表されるＹＡＧ系蛍光体の組成とその発光特性を示す。
【００４２】
表１
表１に示した各特性は、４６０ｎｍの青色光で励起して測定した。又表１における輝度と効率は１）の材料を１００として相対値で示している。
ＡｌをＧａによって置換する場合、発光効率と発光波長を考慮してＧａ：Ａｌ＝１：１から４：６の間の比率に設定することが好ましい。同様に、Ｙの一部をＧｄで置換する場合は、Ｙ：Ｇｄ＝９：１〜１：９の範囲の比率に設定することが好ましく、４：１〜２：３の範囲に設定することがより好ましい。Ｇｄの置換量が２割未満では、緑色成分が大きく赤色成分が少なくなるからであり、Ｇｄの置換量が６割以上になると、赤み成分を増やすことができるが、輝度が急激に低下する。
【００４４】
特に、発光素子の発光波長によるがＹＡＧ系蛍光体中のＹとＧｄとの比率を、Ｙ：Ｇｄ＝４：１〜２：３の範囲に設定することにより、１種類のイットリウム・アルミニウム・ガーネット系蛍光体を用いて黒体放射軌跡にほぼ沿った白色光の発光が可能な発光ダイオードを構成することができる。また、ＹＡＧ系蛍光体中のＹとＧｄとの比率を、Ｙ：Ｇｄ＝２：３〜１：４の範囲に設定すると、輝度は低いが電球色の発光が可能な発光ダイオードを構成することができる。尚、Ｃｅの含有量（置換量）は、０．００３〜０．２の範囲に設定することにより、発光ダイオードの相対発光光度を７０％以上にできる。含有量が０．００３未満では、Ｃｅによるフォトルミネッセンスの励起発光中心の数が減少することにより光度が低下し、逆に０．２より大きくなると濃度消光が生じる。
【００４５】
以上のように、組成のＡｌのー部をＧａで置換することにより発光波長を短波長にシフトさせることができ、また、組成のＹのー部をＧｄで置換することで、発光波長を長波長へシフトさせることができる。このように組成を変化することで発光色を連続的に調節することが可能である。また、波長が２５４ｎｍや３６５ｎｍであるＨｇ輝線ではほとんど励起されず４５０ｎｍ付近の青色系発光素子からのＬＥＤ光による励起効率が高い。さらに、ピーク波長がＧｄの組成比で連続的に変えられるなど窒化物半導体発光素子の青色系発光を白色系発光に変換するための理想条件を備えている。
【００４６】
また、実施形態１では、窒化ガリウム系半導体を用いた発光素子と、セリウムで付活されたイットリウム・アルミニウム・ガーネット蛍光体（ＹＡＧ）に希土類元素のサマリウム（Ｓｍ）を含有させたフォトルミネセンス蛍光体とを組み合わせることにより、発光ダイオードの発光効率をさらに向上させることができる。
【００４７】
このようなフォトルミネセンス蛍光体は、Ｙ、Ｇｄ、Ｃｅ、Ｓｍ、Ａｌ及びＧａの原料として酸化物、又は高温で容易に酸化物になる化合物を使用し、それらを所定の化学量論比で十分に混合して混合原料を作製し、作製された混合原料に、フラックスとしてフッ化アンモニウム等のフッ化物を適量混合して坩堝に詰め、空気中１３５０〜１４５０℃の温度範囲で２〜５時間焼成して焼成品を得、次に焼成品を水中でポールミルして、洗浄、分離、乾燥、最後に篩を通すことにより作製できる。
【００４８】
上述の作製方法において、混合原料は、Ｙ、Ｇｄ、Ｃｅ、Ｓｍの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈したものを焼成して得られる共沈酸化物と、酸化アルミニウム、酸化ガリウムとを混合することにより作製してもよい。
【００４９】
一般式（Ｙ1-p-q-rＧｄpＣｅqＳｍr）3Ａｌ5Ｏ12で表すことができるフォトルミネセンス蛍光体は、結晶中にＧｄを含有することにより、特に４６０ｎｍ以上の長波長域の励起発光効率を高くすることができる。また、ガドリニウムの含有量を増加させることにより、発光ピーク波長を、５３０ｎｍから５７０ｎｍまで長波長に移動させ、全体の発光波長も長波長側にシフトさせることができる。赤みの強い発光色が必要な場合、Ｇｄの置換量を多くすることで達成できる。一方、Ｇｄが増加すると共に、青色光によるフォトルミネセンスの発光輝度は徐々に低下する。したがって、ｐは０．８以下であることが好ましく、０．７以下であることがより好ましい。さらに好ましくは０．６以下である。
【００５０】
また、一般式（Ｙ1-p-q-rＧｄpＣｅqＳｍr）3Ａｌ5Ｏ12で表されるＳｍを含むフォトルミネセンス蛍光体は、Ｇｄの含有量を増加させても温度特性の低下を少なくできる。すなわち、Ｓｍを含有させることにより、高温度におけるフォトルミネセンス蛍光体の発光輝度の劣化は大幅に改善される。その改善される程度はＧｄの含有量が多くなるほど、大きくなる。特に、Ｇｄの含有量を増加させてフォトルミネセンスの発光の色調に赤みを付与した組成の蛍光体は、温度特性が悪くなるので、Ｓｍを含有させて温度特性を改善することが有効である。なお、ここで言う温度特性とは、４５０ｎｍの青色光による常温(２５℃)における励起発光輝度に対する、同蛍光体の高温（２００℃)における発光輝度の相対値（％）のことである。 Ｓｍの含有量ｒは０．０００３≦ｒ≦０．０８の範囲であることが好ましく、これによって温度特性を６０％以上にすることができる。この範囲よりｒが小さいと、温度特性の改良効果が小さくなる。また、この範囲よりｒが大きくなると温度特性は逆に低下してくる。また、Ｓｍの含有量ｒは０．０００７≦ｒ≦０．０２の範囲であることがさらに好ましく、これによって温度特性は８０％以上にできる。
【００５１】
Ｃｅの含有量ｑは、０．００３≦ｑ≦０．２の範囲であることが好ましく、これによって、相対発光輝度が７０％以上にできる。ここで、相対発光輝度とは、ｑ＝０．０３の蛍光体の発光輝度を１００パーセントとした場合における発光輝度のことをいう。
Ｃｅの含有量ｑが０．００３以下では、Ｃｅによるフォトルミネセンスの励起発光中心の数が減少するために輝度が低下し、逆に、０．２より大きくなると濃度消光が生ずる。ここで、濃度消光とは、蛍光体の輝度を高めるために付活剤の濃度を増加していくとある最適値以上の濃度では発光強度が低下することである。
【００５２】
本発明の発光ダイオードにおいては、Ａｌ、Ｇａ、Ｙ及びＧｄやＳｍの含有量が異なる２種類以上の（Ｙ1-p-q-rＧｄpＣｅqＳｍr）3Ａｌ5Ｏ12フォトルミネセンス蛍光体を混合して用いてもよい。これによって、蛍光発光中のＲＧＢの波長成分を増やすことができ、これに、例えばカラーフィルターを用いることによりフルカラー液晶表示装置用としても利用できる。また、本発明の発光ダイオードにおいて、フォトルミネッセンス蛍光体は、それぞれＹとＡｌとを含んでなる互いに組成の異なる２以上の、セリウムで付活されたイットリウム・アルミニウム・ガーネット系蛍光体を含むようにしてもよい。これによって、発光素子の特性（発光波長）に対応して、フォトルミネッセンス蛍光体の発光スペクトルを調整して、所望の発光色の発光をさせることができる。さらに、本発明の発光ダイオードでは、発光装置の発光波長を所定の値に設定するために、前記フォトルミネッセンス蛍光体は、それぞれ一般式（Ｒｅ1-rＳｍr）3（Ａｌ1-sＧａs）5Ｏ12：Ｃｅ（ただし、０≦ｒ＜１、０≦ｓ≦１、Ｒｅは、Ｙ、Ｇｄから選択される少なくとも一種である。）で表され、互いに組成の異なる２以上の蛍光体を含むことが好ましい。また、本発明の発光ダイオードにおいては、発光波長を調整するために前記フォトルミネッセンス蛍光体は、一般式Ｙ3（Ａｌ1-sＧａs）5Ｏ12：Ｃｅで表される第１の蛍光体と、一般式Ｒｅ3Ａｌ5Ｏ12：Ｃｅで表される第２の蛍光体とを含んでもよい。但し、０≦ｓ≦１、Ｒｅは、Ｙ、Ｇａ、Ｌａから選択される少なくとも一種である。また、本発明の発光ダイオードにおいては、発光波長を調整するために、前記フォトルミネッセンス蛍光体は、それぞれイットリウム・アルミニウム・ガーネット系蛍光体において、イットリウムの一部がガドリニウムに置換され、互いに置換量が異なる第１の蛍光体と第２の蛍光体とを含むようにしてもよい。
【００５３】
（発光素子１０２、２０２）
発光素子は、図１及び図２に示すように、モールド部材に埋設されることが好ましい。本発明の発光ダイオードに用いられる発光素子は、セリウムで付活されたガーネット系蛍光体を効率良く励起できる窒化ガリウム系化合物半導体である。窒化ガリウム系化合物半導体を用いた発光素子１０２，２０２は、ＭＯＣＶＤ法等により基板上にＩｎＧａＮ等の窒化ガリウム系半導体を発光層として形成することにより作製される。発光素子の構造としては、ＭＩＳ接合、ＰＩＮ接合やＰＮ接合などを有するホモ構造ヘテロ構造あるいはダブルヘテロ構成のものが挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。また、半導体活性層を量子効果が生ずる程度に薄く形成した単一量子井戸構造や多重量子井戸構造とすることもできる。特に、本発明においては、発光素子の活性層をＩｎＧａＮの単一量子井戸構造とすることにより、フォトルミネセンス蛍光体の劣化がなく、より高輝度に発光する発光ダイオードとして利用することができる。
【００５４】
窒化ガリウム系化合物半導体を使用した場合、半導体基板にはサファイヤ、スピネル、ＳｉＣ、Ｓｉ、ＺｎＯ等の材料が用いることができるが、結晶性の良い窒化ガリウムを形成させるためにはサファイヤ基板を用いることが好ましい。このサファイヤ基坂上にＧａＮ、ＡｌＮ等のバッファー層を介してＰＮ接合を形成するように窒化ガリウム半導体層を形成する。窒化ガリウム系半導体は、不純物をドーブしない状態でＮ型導電性を示すが、発光効率を向上させるなど所望の特性（キャリヤ濃度等）のＮ型窒化ガリウム半導体を形成するためには、Ｎ型ドーパントとしてＳｉ、Ｇｅ、Ｓｅ、Ｔｅ、Ｃ等を適宜ドープすることが好ましい。一方、ｐ型窒化ガリウム半導体を形成する場合は、ｐ型ドーパンドであるＺｎ、Ｍｇ、Ｂｅ、Ｃａ、Ｓｒ、Ｂａ等をドープする。尚、窒化ガリウム系化合物半導体は、ｐ型ドーパントをドーブしただけではｐ型化しにくいためｐ型ドーパント導入後に、炉による加熱、低速電子線照射やプラズマ照射等によりｐ型化させることが好ましい。エッチングなどによりｐ型及びＮ型の窒化ガリウム半導体の表面を露出させた後、各半導体層上にスバッタリング法や真空蒸着法などを用いて所望の形状の各電極を形成する。
【００５５】
次に、以上のようにして形成された半導体ウエハー等を、ダイシングソーにより直接フルカットする方法、又は刃先幅よりも広い幅の溝を切り込んだ後(ハーフカット)、外力によって半導体ウエハーを割る方法、あるいは、先端のダイヤモンド針が往復直線運動するスクライバーにより半導体ウエハーに極めて細いスクライブライン(経線)を例えば碁盤目状に引いた後、外力によってウエハーを割る方法等を用いて、半導体ウエハーをチップ状にカットする。このようにして窒化ガリウム系化合物半導体からなる発光素子を形成することができる。
【００５６】
本実施形態１の発光ダイオードにおいて白色系を発光させる場合は、フォトルミネセンス蛍光体との補色関係や樹脂の劣化等を考慮して発光素子の発光波長は４２０ｎｍ以上４９０ｎｍ以下に設定する。発光素子とフォトルミネセンス蛍光体との効率をそれぞれより向上させるためには、４５０ｎｍ以上４７５ｎｍ以下に設定することがさらに好ましい。実施形態１の白色系発光ダイオードの発光スペクトルの一例を図４に示す。ここに例示した発光ダイオードは、図１に示すリードタイプのものであって、後述する実施例１の発光素子とフォトルミネッセンス蛍光体とを用いたものである。ここで、図４において、４５０ｎｍ付近にピークを持つ発光が発光素子からの発光であり、５７０ｎｍ付近にピークを持つ発光が発光素子によって励起されたフォトルミネセンスの発光である。
【００５７】
また、表１に示した蛍光体とピーク波長４６５ｎｍの青色ＬＥＤ（発光素子）とを組み合わせた白色系発光ダイオードで、実現できる色再現範囲を図１３に示す。この白色系発光ダイオードの発光色は、青色ＬＥＤ起源の色度点と蛍光体起源の色度点とを結ぶ直線上のいずれかに位置するので、表１の１）〜７）の蛍光体を使用することにより、色度図中央部の広範な白色領域（図１３中斜線を付した部分）をすべてカバーすることができる。図１６は、白色系発光ダイオードにおける蛍光体の含有量を変化させた時の発光色の変化を示したものである。ここで、蛍光体の含有量は、コーティング部に使用する樹脂に対する重量パーセントで示している。図１６から明らかなように、蛍光体の量を増やせば蛍光体の発光色に近付き、減らすと青色ＬＥＤに近付く。
【００５８】
なお、本発明では、蛍光体を励起する光を発生する発光素子に加えて、蛍光体を励起しない発光素子をー緒に用いることもできる。具体的には、蛍光体を励起可能な窒化物系化合物半導体である発光素子に加えて、蛍光体を実質的に励起しない、発光層がガリウム燐、ガリウムアルミニウムひ素、ガリウムひ素燐やインジウムアルミニウム燐などである発光素子を一緒に配置する。このようにすると、蛍光体を励起しない発光素子からの光は、蛍光体に吸収されることなく外部に放出される。これによって、紅白が発光可能な発光ダイオードとすることができる。
以下、図１及び図２の発光ダイオードの他の構成要素について説明する。
【００５９】
(導電性ワイヤー１０３、２０３）
導電性ワイヤー１０３、２０３としては、発光素子１０２、２０２の電極とのオーミック性、機械的接続性、電気伝導性及び熱伝導性がよいものが求められる。熱伝導度としては０．０ｌｃａｌ／（ｓ）（ｃｍ2）（℃／ｃｍ）以上が好ましく、より好ましくは０．５ｃａｌ／（ｓ）（ｃｍ2）（℃／ｃｍ）以上である。また、作業性を考慮すると導電性ワイヤーの直径は、１０μｍ以上、４５μｍ以下であることが好ましい。特に、蛍光体が含有されたコーティング部とモールド部材とをそれぞれ同一材料を用いたとしても、どちらか一方に蛍光体が入ることによる熱膨張係数の違いにより、それらの界面においては、導電性ワイヤーは断線し易い。そのために導電性ワイヤーの直径は、２５μｍ以上がより好ましく、発光面積や取り扱い易さの観点から３５μｍ以下が好ましい。導電性ワイヤーの材質としては、金、銅、白金、アルミニウム等の金属及びそれらの合金が挙げられる。このような材質、形状からなる導電性ワイヤーを用いることにより、ワイヤーボンディング装置によって、各発光素子の電極と、インナー・リード及びマウント・リードとを容易に接続することができる。
【００６０】
(マウント・リード１０５）
マウント・リード１０５は、カップ部１０５ａとリード部１０５ｂとからなり、カップ部１０５ａに、ダイボンディング装置で発光素子１０２を載置する十分な大きさがあれば良い。また、複数の発光素子をカップ内に設け、マウント・リードを発光素子の共通電極として利用する場合においては、異なる電極材料を用いる場合があるので、それぞれに十分な電気伝導性とボンディングワイヤー等との接続性が求められる。また、マウント・リード上のカップ内に発光素子を配置すると共に蛍光体をカップ内部に充填する場合は、蛍光体からの光が当方的に放出されたとしても、カップにより所望の方向に反射されるので、近接して配置させた別の発光ダイオードからの光による疑似点灯を防止することができる。ここで、擬似点灯とは、近接して配置された別の発光ダイオードに電力を供給していなくても発光しているように見える現象のことをいう。
【００６１】
発光素子１０２とマウント・リード１０５のカップ部１０５ａとの接着は、エポキシ樹脂、アクリル樹脂やイミド樹脂等の熱硬化性樹脂などを用いて行うことができる。また、フェースダウン発光素子（基板側から発光を取り出すタイプであって、発光素子の電極をカップ部１０５ａに対向させて取り付けるように構成されたもの）を用いる場合は、該発光素子をマウント・リードと接着させると共に電気的に導通させるために、Ａｇペースト、カーボンペースト、金属バンプ等を用いることができる。さらに、発光ダイオードの光利用効率を向上させるために発光素子が配置されるマウント・リードのカップ部の表面を鏡面状とし、表面に反射機能を持たせても良い。この場合の表面粗さは、０．１Ｓ以上０．８Ｓ以下が好ましい。また、マウント・リードの具体的な電気抵抗としては３００μΩ・ｃｍ以下が好ましく、より好ましくは、３μΩ・ｃｍ以下である。また、マウント・リード上に複数の発光素子を積置する場合は、発光素子からの発熱量が多くなるため熱伝導度がよいことが求められ、その熱伝導度は、０．０ｌｃａｌ／（ｓ）（ｃｍ2）（℃／ｃｍ）以上が好ましく、より好ましくは０．５ｃａｌ／（ｓ）（ｃｍ2）（℃／ｃｍ）以上である。これらの条件を満たす材料としては、鉄、銅、鉄入り銅、錫入り銅、メタライズパターン付きセラミック等が挙げられる。
【００６２】
（インナー・リード１０６）
インナー・リード１０６は、マウント・リード１０５上に配置された発光素子１０２の一方の電極に、導電性ワイヤー等で接続される。マウント・リード上に複数の発光素子を設けた発光ダイオードの場合は、インナーリード１０６を複数設け、各導電性ワイヤー同士が接触しないよう各インナーリードを配置する必要がある。例えば、マウント・リードから離れるに従って、各インナー・リードのワイヤーボンディングされる各端面の面積を順次大きくすることによって、導電性ワイヤー間の間隔を開けるようにボンディングし、導電性ワイヤー間の接触を防ぐことができる。インナーリードの導電性ワイヤーとの接続端面の粗さは、密着性を考慮して１．６Ｓ以上１ＯＳ以下に設定することが好ましい。
【００６３】
インナー・リードは、所望の形状になるように型枠を用いた打ち抜き加工等を用いて形成することができる。さらには、インナー・リードを打ち抜き形成後、端面方向から加圧することにより所望の端面の面積と端面高さを調整するようにしても良い。
また、インナー・リードは、導電性ワイヤーであるボンディングワイヤー等との接続性及び電気伝導性が良いことが求められる。具体的な電気抵抗としては、３００μΩ・ｃｍ以下であることが好ましく、より好ましくは３μΩ・ｃｍ以下である。これらの条件を満たす材料としては、鉄、銅、鉄入り銅、錫入り銅及び銅、金、銀をメッキしたアルミニウム、鉄、銅等が挙げられる。
【００６４】
（コーティング部１０１）
コーティング部１０１は、モールド部材１０４とは別にマウント・リードのカップに設けられるものであり、本実施の形態１では、発光素子の発光を変換するフォトルミネセンス蛍光体が含有されるものである。コーティング部の具体的材料としては、エポキシ樹脂、ユリア樹脂、シリコーンなどの耐侯性に優れた透明樹脂や硝子などが適する。また、フォトルミネセンス蛍光体と共に拡散剤を含有させても良い。具体的な拡散剤としては、チタン酸バリウム、酸化チタン、酸化アルミニウム、酸化珪素等を用いることが好ましい。さらに、蛍光体をスパッタリングにより形成する場合、コーティング部を省略することもできる。この場合、膜厚を調整したり蛍光体層に開口部を設けることで混色表示が可能な発光ダイオードとすることができる。
【００６５】
（モールド部材１０４）
モールド部材１０４は、発光素子１０２、導電性ワイヤー１０３、フォトルミネセンス蛍光体が含有されたコーティング部１０１などを外部から保護する機能を有する。本実施形態１では、モールド部材１０４にさらに拡散剤を含有させることが好ましく、これによって発光素子１０２からの指向性を緩和させることができ、視野角を増やすことができる。また、モールド部材１０４は、発光ダイオードにおいて、発光素子からの発光を集束させたり拡散させたりするレンズ機能を有する。従って、モールド部材１０４は、通常、凸レンズ形状、凹レンズ形状さらには、発光観測面から見て楕円形状やそれらを複数組み合わせた形状に形成される。また、モールド部材１０４は、それぞれ異なる材料を複数積層した構造にしてもよい。モールド部材１０４の具体的材料としては、主としてエポキシ樹脂、ユリア樹脂、シリコーン樹脂などの耐候性に優れた透明樹脂や硝子などが好適に用いられる。また、拡散剤としては、チタン酸バリウム、酸化チタン、酸化アルミニウム、酸化珪素等を用いることができる。さらに、本発明では、拡散剤に加えてモールド部材中にフォトルミネセンス蛍光体を含有させてもよい。すなわち、本発明では、フォトルミネセンス蛍光体をコーティング部に含有させても良いし、モールド部材中に含有させてもよい。モールド部材にフォトルミネセンス蛍光体を含有させることにより、視野角をさらに大きくすることができる。
【００６６】
また、コーティング部とモールド部材の双方に含有させてもよい。またさらに、コーティング部をフォトルミネセンス蛍光体が含有された樹脂とし、モールド部材を、コーティング部と異なる部材である硝子を用いて形成しても良く、このようにすることにより、水分などの影響が少ない発光ダイオードを生産性良く製造できる。また、用途によっては、屈折率を合わせるために、モールド部材とコーティング部とを同じ部材を用いて形成してもよい。本発明においてモールド部材に拡散剤や着色剤を含有させることによって、発光観測面側から見た蛍光体の着色を隠すことができると共により混色性を向上させることができる。すなわち、蛍光体は強い外光のうち青色成分を吸収し発光し、黄色に着色しているように見える。
しかしながら、モールド部材に含有された拡散剤はモールド部材を乳白色にし、着色剤は所望の色に着色する。これによって、発光観測面から蛍光体の色が観測されることはない。さらに、発光素子の主発光波長が４３０ｎｍ以上では、光安定化剤である紫外線吸収剤を含有させることがより好ましい。
【００６７】
発明の実施２．
本発明に係る実施の形態２の発光ダイオードは、発光素子として発光層に高エネルギーバンドギャップを有する窒化ガリウム系半導体を備えた素子を用い、フォトルミネセンス蛍光体として、互いに組成の異なる２種類以上のフォトルミネセンス蛍光体、好ましくはセリウムで付活されたイットリウム・アルミニウム・ガーネット系蛍光体を含む蛍光体を用いる。これにより実施の形態２の発光ダイオードは、発光素子によって発光されるＬＥＤ光の発光波長が、製造バラツキ等により所望値からずれた場合でも、２種類以上の蛍光体の含有量を調節することによって所望の色調を持った発光ダイオードを作製できる。この場合、発光波長が比較的短い発光素子に対しては、発光波長が比較的短い蛍光体を用い、発光波長が比較的長い発光素子には発光波長が比較的長い蛍光体を用いることで発光ダイオードから出力される発光色を一定にすることができる。
【００６８】
蛍光体に関して言うと、フォトルミネセンス蛍光体として、一般式（Ｒｅ1-rＳｍr）3（Ａｌ1-sＧａs）5Ｏ12：Ｃｅで表されるセリウムで付活された蛍光体を用いることもできる。但し、０＜ｒ≦１、０≦ｓ≦１、Ｒｅは、Ｙ、Ｇｄ、Ｌａから選択される少なくとも一種である。これにより発光素子から放出された可視光域における高エネルギーを有する光が長時間高輝度に照射された場合や種々の外部環境の使用下においても蛍光体の変質を少なくできるので、発光色の色ずれや発光輝度の低下が極めて少なく、かつ高輝度の所望の発光成分を有する発光ダイオードを構成できる。
【００６９】
（実施の形態２のフォトルミネセンス蛍光体）
実施の形態２の発光ダイオードに用いられるフォトルミネセンス蛍光体について詳細に説明する。実施の形態２においては、上述したように、フォトルミネセンス蛍光体として組成の異なる２種類以上のセリウムで付活されたフォトルミネセンス蛍光体を使用した以外は、実施の形態１と同様に構成され、蛍光体の使用方法は実施の形態と同様である。
【００７０】
また、実施形態１と同様に、フォトルミネセンス蛍光体の分布を種々変える（発光素子から離れるに従い濃度勾配をつける等）ことによって耐候性の強い特性を発光ダイオードに持たせることができる。このような分布はフォトルミネセンス蛍光体を含有する部材、形成温度、粘度やフォトルミネセンス蛍光体の形状、粒度分布などを調整することによって種々調整することができる。したがって、実施形態２では、使用条件などに対応させて、蛍光体の分布濃度が設定される。また、実施の形態２では、２種類以上の蛍光体をそれぞれ発光素子から出力される光に対応して配置を工夫（例えば、発光素子に近い方から順番に配置する等）することによって発光効率を高くすることができる。
【００７１】
以上のように構成された実施形態２の発光ダイオードは、実施形態１と同様、照度強度として（Ｅｅ）＝３Ｗ・ｃｍ-2以上１０Ｗ・ｃｍ-2以下の比較的高出力の発光素子と接する或いは近接して配置された場合においても高効率でかつ十分な耐光性を有する発光ダイオードを構成できる。
【００７２】
実施形態２に用いられるセリウムで付活されたイットリウム・アルミニウム・ガーネット系蛍光体（ＹＡＧ系蛍光体）は、実施形態１と同様、ガーネット構造を有するので、熱、光及び水分に強い。
【００７３】
ガーネット構造を持ったＹＡＧ系蛍光体の組成の内、Ａｌの一部をＧａで置換することで発光波長が短波長側にシフトし、また組成のＹの一部をＧｄ及び／又はＬａで置換することで、発光波長が長波長側へシフトする。ＡｌのＧａへの置換は、発光効率と発光波長を考慮してＧａ：Ａｌ＝１：１から４：６が好ましい。同様に、Ｙの一部をＧｄ及び／又はＬａで置換することは、Ｙ：Ｇｄ及び／又はＬａ＝９：１から１：９であり、より好ましくは、Ｙ：Ｇｄ及び／又はＬａ＝４：１から２：３である。置換が２割未満では、緑色成分が大きく赤色成分が少なくなる。また、６割以上では、赤み成分が増えるものの輝度が急激に低下する。
【００７４】
このようなフォトルミネセンス蛍光体は、Ｙ、Ｇｄ、Ｃｅ、Ｌａ、Ａｌ、Ｓｍ及びＧａの原料として酸化物、又は高温で容易に酸化物になる化合物を使用し、それらを化学量論比で十分に混合して原料を得る。又は、Ｙ、Ｇｄ、Ｃｅ、Ｌａ、Ｓｍの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈したものを焼成して得られる共沈酸化物と、酸化アルミニウム、酸化ガリウムとを混合して混合原料を得る。これにフラックスとしてフッ化アンモニウム等のフッ化物を適量混合して坩堝に詰め、空気中１３５０〜１４５０℃の温度範囲で２〜５時間焼成して焼成品を得、次に焼成品を水中でボールミルして、洗浄、分離、乾燥、最後に篩を通すことで得ることができる。
【００７５】
本実施形態２において、組成の異なる２種類以上のセリウムで付活されたイットリウム・アルミニウム・ガーネット系蛍光体は、混合して用いても良いし、それぞれ独立して配置（例えば、積層）して用いても良い。２種類以上の蛍光体を混合して用いた場合、比較的簡単に量産性よく色変換部を形成することができ、２種類以上の蛍光体を独立して配置した場合は、所望の色になるまで重ね合わせることにより、形成後に色調整をすることができる。また、蛍光体をそれぞれ独立して配置して用いる場合、ＬＥＤ素子に近いほうに、光をより短波長側で吸収発光しやすい蛍光体を設け、ＬＥＤより離れた所に、それよりも長波長側で吸収発光しやすい蛍光体を配置することが好ましい。これによって効率よく吸収及び発光させることができる。
【００７６】
以上のように本実施形態２の発光ダイオードは、蛍光物質として、組成の異なる２種類以上のイットリウム・アルミニウム・ガーネット系蛍光体を用いている。これによって、所望の発光色が効率よく発光可能な発光ダイオードを構成することができる。即ち、半導体発光素子が発光する光の発光波長が、図５に示す色度図のＡ点からＢ点に至る線上に位置する場合、組成の異なる２種類以上のイットリウム・アルミニウム・ガーネット系蛍光体の色度点（Ｃ点及びＤ点）である図５のＡ点，Ｂ点，Ｃ点及びＤ点で囲まれた斜線内にある任意の発光色を発光させることができる。
【００７７】
実施形態２では、ＬＥＤ素子、蛍光体の組成若しくはその量を種々選択することによって調節することができる。特に、ＬＥＤ素子の発光波長に対応して、所定の蛍光体を選択することによりＬＥＤ素子の発光波長のバラツキを補償することにより、発光波長のバラツキが少ない発光ダイオードを構成することができる。また、蛍光物質の発光波長を選択することにより、ＲＧＢの発光成分を高輝度に含んだ発光ダイオードを構成することができる。 さらに、実施形態２に用いるイットリウム・アルミニウム・ガーネット系（ＹＡＧ系）蛍光体は、ガーネット構造を有するので、実施形態２の発光ダイオードは、長時間高輝度に発光させることができる。
【００７８】
また、実施形態１及び２の発光ダイオードは、発光観測面からみて蛍光体を介して発光素子を設ける。また、発光素子からの光よりもより長波長側に発光する蛍光物質を用いているので、効率よく発光させることができる。さらに、変換された光は発光素子から放出される光よりも長波長側になっているために、発光素子の窒化物半導体層のバンドギャップよりも小さく、該窒化物半導体層に吸収されにくい。従って、蛍光体が等方的に発光するために発光された光はＬＥＤ素子にも向かうが、蛍光体によって発光された光はＬＥＤ素子に吸収されることはないので、発光ダイオードの発光効率を低下させることはない。
【００７９】
（面状発光光源）
本発明に係る別の実施形態である面状発光光源の例を図６に示す。
図６に示す面状発光光源では、実施形態１又は２で用いたフォトルミネセンス蛍光体が、コーティング部７０１に含有されている。これによって、窒化ガリウム系発光素子が発生する青色系の光を、コーティング部で色変換した後、導光板７０４及び散乱シート７０６を介して面状にして出力する。
【００８０】
詳細に説明すると、図６の面状発光光源において、発光素子７０２は、絶縁層及び導電性パターン（図示せず）が形成されたコの字形状の金属基板７０３内に固定される。発光素子の電極と導電性パターンとを導通させた後、フォトルミネセンス蛍光体をエポキシ樹脂と混合して発光素子７０２が積載されたコの字型の金属基板７０３の内部に充填する。こうして固定された発光素子７０２は、アクリル性の導光板７０４の一方の端面にエポキシ樹脂などで固定される。導光板７０４の一方の主面上の散乱シート７０６が形成されていない部分には、点状に発光する蛍現象防止のため白色散乱剤が含有されたフィルム状の反射部材７０７が形成される。
【００８１】
同様に、導光板７０４の他方の主表面（裏面側）全面及びや発光素子が配置されていない他方の端面上にも反射部材７０５を設け発光効率を向上させるように構成する。これにより、例えば、ＬＣＤのバックライト用として十分な明るさを有する面状発光の発光ダイオードを構成することができる。
この面状発光の発光ダイオードを用いた液晶表示装置は、例えば、導光板７０４の一方の主面上に、透光性導電性パターンが形成された硝子基板間（図示せず）に液晶が注入された液晶装置を介して偏光板を配し構成する。
【００８２】
本発明に係る別の実施形態である面状の発光装置の例を、図７、図８とに示す。図７に示す発光装置は、発光ダイオード７０２によって発生された青色系の光を、フォトルミネセンス蛍光体が含有された色変換部材７０１を介して白色系の光に変換した後、導光板７０４によって面状にして出力するように構成されている。
【００８３】
図８に示す発光装置は、発光素子７０２が発光する青色系の光を、導光板７０４によって面状にした後、導光板７０４の一方の主表面に形成された、フォトルミネッセンス蛍光体を有する散乱シート７０６によって白色光に変換して面状の白色光を出力するように構成されている。ここで、フォトルミネッセンス蛍光体は、散乱シート７０６に含有させても良いし、或いはバインダー樹脂と共に散乱シート７０６に塗布してシート状に形成してもよい。さらには、導光板７０４上にフォトルミネセンス蛍光体を含むバインダーを、シート状ではなく、ドット状に直接形成してもよい。
【００８４】
＜応用例＞
（表示装置）
次に、本発明に係る表示装置について説明する。図９は本発明に係る表示装置の構成を示すブロック図である。該表示装置は、図９に示すように、ＬＥＤ表示器６０１と、ドライバー回路６０２、画像データ記憶手段６０３及び階調制御手段６０４を備えた駆動回路６１０とからなる。ここで、ＬＥＤ表示器６０１は、図１０に示すように、図１又は図２に示す白色系の発光ダイオード５０１が、筺体５０４にマトリクス状に配列され、白黒用のＬＥＤ表示装置として使用される。ここで、筺体５０４には遮光部材５０５が一体で成形されている。
【００８５】
駆動回路６１０は、図９に示すように、入力される表示データを一時的に記憶する画像データ記憶手段（ＲＡＭ）６０３と、ＲＡＭ６０３から読み出したデータに基づいてＬＥＤ表示器６０１のそれぞれの発光ダイオードを所定の明るさに点灯させるための階調信号を演算して出力する階調制御手段６０４と、階調制御手段６０４から出力される信号によってスイッチングされて、発光ダイオードを点灯させるドライバー６０２とを備える。階調制御回路６０４は、ＲＡＭ６０３に記憶されるデータを取り出してＬＥＤ表示器６０１の発光ダイオード点灯時間を演算して点滅させるパルス信号をＬＥＤ表示器６０１に出力する。以上のように構成された表示装置において、ＬＥＤ表示器６０１は、駆動回路から入力されるパルス信号に基づいて表示データに対応した画像を表示することができ、以下のような利点がある。
【００８６】
すなわち、ＲＧＢの３つの発光ダイオードを用いて白色系の表示をさせるＬＥＤ表示器は、ＲＧＢの各発光ダイオードの発光出力を調節して表示させる必要があるため、各発光ダイオードの発光強度、温度特性などを考慮して各発光ダイオードを制御しなけれはならないので、該ＬＥＤ表示器を駆動する駆動回路は複雑になるという問題点があった。しかしながら、本発明の表示装置においては、ＬＥＤ表示器６０１が、ＲＧＢの３種類の発光ダイオードを用いることなく、本発明に係る白色系の発光が可能な発光ダイオード５０１を用いて構成されているので、駆動回路がＲＧＢの各発光ダイオードを個別に制御する必要がなく、駆動回路の構成を簡単にでき、表示装置を安価にできる
【００８７】
また、ＲＧＢの３つの発光ダイオードを用いて白色系の表示をさせるＬＥＤ表示器は、１画素毎に、ＲＧＢの３つの発光ダイオードを組み合わせて白色表示させるためには、３つの各発光ダイオードをそれぞれ同時に発光させて混色する必要があり、一画素あたりの表示領域が大きくなり、高精細に表示させることができなかった。しかしながら、本発明の表示装置におけるＬＥＤ表示器は、１個の発光ダイオードで白色表示できるので、より高精細に白色系表示させることができる。さらに、３つの発光ダイオードの混色によって表示するＬＥＤ表示器は、見る方向や角度によって、ＲＧＢの発光ダイオードのいずれかが部分的に遮光され表示色が変化する場合があるが、本発明のＬＥＤ表示器ではそのようなことはない。
【００８８】
以上のように本発明に係る白色系の発光が可能な発光ダイオードを用いたＬＥＤ表示器を備えた表示装置は、より高精細化が可能であり、安定した白色系の表示ができ、さらに、色むらを少なくできる特長がある。また、本発明に係る白色表示が可能なＬＥＤ表示器は、従来の赤色、緑色のみを用いたＬＥＤ表示器に比べ人間の目に対する刺激が少なく長時間の使用に適している。
【００８９】
（本発明の発光ダイオードを用いた他の表示装置の例）
本発明の発光ダイオードを用いることにより、図１１に示すように、ＲＧＢの３つの発光ダイオードに本発明の発光ダイオードを加えたものを１絵素とするＬＥＤ表示器を構成することができる。そして、このＬＥＤ表示器と所定の駆動回路とを接続することにより種々の画像を表示することができる表示装置を構成できる。この表示装置における駆動回路は、モノクロームの表示装置と同様に、入力される表示データをー時的に記憶する画像データー記憶手段（ＲＡＭ）と、ＲＡＭに記憶されたデータに基づいて各発光ダイオードを所定の明るさに点灯させるための階調信号を演算する階調制御回路と、階調制御回路の出力信号でスイッチングされて、各発光ダイオードを点灯させるドライバーとを備える。ただし、この駆動回路は、ＲＧＢと白色系に発光する各発光ダイオードをそれぞれ制御する専用の回路を必要とする。
【００９０】
階調制御回路は、ＲＡＭに記憶されるデータから、それぞれの発光ダイオードの点灯時間を演算して、点滅させるパルス信号を出力する。ここで、白色系の表示を行う場合は、ＲＧＢ各発光ダイオードを点灯するパルス信号のパルス幅を短く、あるいは、パルス信号のピーク値を低く、あるいは全くパルス信号を出力しないようにする。他方、それを補償するように（すなわち、パルス信号のパルス幅を短く、あるいは、パルス信号のピーク値を低く、あるいは全くパルス信号を出力しない分を補うように）白色系発光ダイオードにパルス信号を供給する。これにより、ＬＥＤ表示器の白色を表示する。
【００９１】
このように、ＲＧＢの発光ダイオードに白色発光ダイオードを追加することによって、ディスプレーの輝度を向上させることができる。また、ＲＧＢの組合せで白色を表示しようとすると、見る角度によってＲＧＢのうちのいずれか１つ又はいずれか２つの色が強調され、純粋な白を表現することができないが、本表示装置のように白色の発光ダイオードを追加することにより、そのような問題を解決することができる。
【００９２】
このような表示装置における駆動回路では、白色系発光ダイオードを所望の輝度で点灯させるためのパルス信号を演算する階調制御回路としてＣＰＵを別途備えることが好ましい。階調制御回路から出力されるパルス信号は、白色系発光ダイオードのドライバーに入力されてドライバをスイッチングさせる。ドライバーがオンになると白色系発光ダイオードが点灯され、オフになると消灯される。
【００９３】
（信号機）
本発明の発光ダイオードを表示装置の１種である信号機として利用した場合、長時間安定して発光させることが可能であると共に発光ダイオードの一部が消灯しても色むらなどが生じないという特長がある。本発明の発光ダイオードを用いた信号機の概略構成として、導電性パターンが形成された基坂上に白色系発光ダイオードを所定の配列に配置する。
【００９４】
このような発光ダイオードを直列又は直並列に接続された発光ダイオードの回路を発光ダイオード群として扱う。発光ダイオード群を２つ以上用いそれぞれ渦巻き状に発光ダイオードを配置させる。全ての発光ダイオードが配置されると円状に全面に配置される。各発光ダイオード及び基板から外部電力と接続させる電源コードをそれぞれ、ハンダにより接続した後、鉄道信号用の匡体内に固定する。ＬＥＤ表示器は、遮光部材が付いたアルミダイキャストの匡体内に配置され表面にシリコーンゴムの充填材で封止されている。匡体の表示面は、白色レンズを設けてある。また、ＬＥＤ表示器の電気的配線は、筺体の裏面から筺体を密閉するためにゴムパッキンを介して通し、筺体内を密閉する。
【００９５】
このようにして白色系信号機を形成することができる。本発明の発光ダイオードを、複数の群に分け中心部から外側に向け輪を描く渦巻き状などに配置し、並列接続することでより信頼性が高い信号機を構成することができる。この場合、中心部から外側に向け輪を描くことにより、信頼性が高い信号機を構成することができる。中心部から外側に向け輪を描くことには、連続的に輪を描くものも断続的に配置するものの双方を含む。したがって、ＬＥＤ表示器の表示面積などを考慮して、配置される発光ダイオードの数や発光ダイオード群の数を種々選択することができる。
【００９６】
この信号機により、一方の発光ダイオード群や一部の発光ダイオードが何らかのトラブルにより消灯したとしても他方の発光ダイオード群や残った発光ダイオードにより信号機を円形状に均一に発光させることが可能となるり、色ずれが生ずることもない。渦巻き状に配置してあることから中心部を密に配置することができ電球発光の信号と何ら違和感なく駆動させることができる。
【００９７】
【実施例】
以下、本発明の実施例について説明するが、本発明は、以下に示す実施例のみに限定されるものではないことを念のために言っておく。
【００９８】
（実施例１）
実施例１は、発光素子として、ＧａＩｎＮ半導体を用いた発光ピークが４５０ｎｍ、半値幅３０ｎｍの発光素子を用いた例である。実施例１の発光素子は、洗浄されたサファイ基板上にＴＭＧ（トリメチルガリウム)ガス、ＴＭＩ（トリメチルインジウム）ガス、窒素ガス及びドーバントガスをキャリアガスと共に流し、ＭＯＣＶＤ法で窒化ガリウム系化合物半導体を成膜することにより作製される。成膜時に、ドーパントガスとしてＳｉＨ4とＣｐ2Ｍｇと、を切り替えることによってＮ型導電性を有する窒化ガリウム半導体とＰ型導電性を有する窒化ガリウム半導体を形成する。
【００９９】
実施例１のＬＥＤ素子は、Ｎ型導電性を有する窒化ガリウム半導体であるコンタクト層と、Ｐ型導電性を有する窒化ガリウムアルミニウム半導体であるクラッド層、Ｐ型導電性を有する窒化ガリウム半導体層であるコンタクト層を備え、Ｎ型導電性を有するコンタクト層とＰ型導電性を有するクラッド層との間に厚さ約３ｎｍの、単一量子井戸構造を構成するためのノンドープＩｎＧａＮからなる活性層が形成されている。尚、サファイア基板上には、バッファ層として低温で窒化ガリウム半導体層が形成されている。また、Ｐ型窒化ガリウム半導体は、成膜後４００℃以上の温度でアニールされている。
【０１００】
エッチングによりＰ型及びＮ型の各半導体表面を露出させた後、スパッタリングによりｎ側ｐ側の各電極がそれぞれ形成される。こうして作製された半導体ウエハーにスクライブラインを引いた後、外力を加えて個々の発光素子に分割した。
【０１０１】
以上のようにして作製された発光素子を、銀メッキした鋼製のマウント・リードのカップ部にエポキシ樹脂でダイボンディングした後、発光素子の各電極とマウント・リード及びインナー・リードとをそれぞれ直径が３０μｍの金線を用いてワイヤーボンディングして、リードタイプの発光ダイオードを作製した。
【０１０２】
一方、フォトルミネセンス蛍光体は、Ｙ、Ｇｄ、Ｃｅの希土類元素を所定の化学量論比で酸に溶解した溶解液を修酸で共沈させ、沈澱物を焼成して得られる共沈酸化物と、酸化アルミニウムを混合して、この混合原料にフラックスとしてフツ化アンモニウムを混合して坩堝に詰めて、空気中１４００℃の温度で３時間焼成した後、その焼成品をボールミルを用いて湿式粉砕して、洗浄、分離、乾燥後、最後に篩を通すことにより作製した。その結果、フォトルミネセンス蛍光体は、ＹがＧｄで約２割置換されたイットリウム・アルミニウム酸化物として（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅが形成された。尚、Ｃｅの置換は０．０３であった。
【０１０３】
以上のようにして作製した（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅ蛍光体８０重量部とエポキシ樹脂１００重量部とをよく混合してスラリーとし、このスラリーを発光素子が載置されたマウント・リードのカップ内に注入した後、１３０℃の温度で１時間で硬化させた。こうして発光素子上に厚さ１２０μｍのフォトルミネセンス蛍光体が含有されたコーティング部を形成した。なお、本実施例１では、コーティング部においては、発光素子に向かってフォトルミネセンス蛍光体が徐々に多く分布するように構成した。照射強度は、約３．５Ｗ／ｃｍ2である。その後、さらに発光素子やフォトルミネセンス蛍光体を外部応力、水分及び塵芥などから保護する目的でモールド部材として透光性エポキシ樹脂を形成した。ここで、モールド部材は、砲弾型の型枠の中に、リードフレームにボンディングされ、フォトルミネセンス蛍光体を含んだコーティング部に覆われた発光素子を挿入して、透光性エポキシ樹脂を注入した後、１５０℃５時間にて硬化させて形成した。
【０１０４】
このように形成した発光ダイオードは、発光観測正面から見ると、フォトルミネセンス蛍光体のボディーカラーにより中央部が黄色っぽく着色されていた。
こうして得られた白色系が発光可能な発光ダイオードの色度点、色温度、演色性指数を測定した結果、それぞれ、色度点は、（ｘ＝０．３０２、ｙ＝０．２８０）、色温度８０８０Ｋ、演色性指数（Ｒａ)＝８７．５と三波長型蛍光灯に近い性能を示した。また、発光効率は９．５１ｍ／ｗと白色電球並であった。さらに、温度２５℃６０ｍＡ通電、温度２５℃２０ｍＡ通電、温度６０℃９０％ＲＨ下で２０ｍＡ通電の各寿命試験においても蛍光体に起因する変化は観測されず通常の青色発光ダイオードと寿命特性に差がないことが確認できた。
【０１０５】
(比較例1)
フォトルミネセンス蛍光体を（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅ蛍光体から（ＺｎＣｄ）Ｓ：Ｃｕ、Ａｌとした以外は、実施例１と同様にして発光ダイオードの形成及び寿命試験を行った。形成された発光ダイオードは通電直後、実施例１と同様、白色系の発光が確認されたが輝度は低かった。また、寿命試験においては、約１００時間で出力がゼロになった。劣化原因を解析した結果、蛍光体が黒化していた。
【０１０６】
これは、発光素子の発光光と蛍光体に付着していた水分あるいは外部環境から進入した水分により光分解し蛍光体結晶表面にコロイド状亜鉛金属を析出し外観が黒色に変色したものと考えられる。温度２５℃２０ｍＡ通電、温度６０℃９０％ＲＨ下で２０ｍＡ通電の寿命試験結果を実施例１の結果と共に図１２に示す。輝度は初期値を基準にしそれぞれの相対値を示す。図１２において、実線が実施例１であり波線が比較例１を示す。
【０１０７】
（実施例２）
実施例２の発光ダイオードは、発光素子における窒化物系化合物半導体のＩｎの含有量を実施例１の発光素子よりも増やすことにより、発光素子の発光ピークを４６０ｎｍとし、フォトルミネセンス蛍光体のＧｄの含有量を実施例１よりも増やし（Ｙ0.6Ｇｄ0.4）3Ａｌ5Ｏ12：Ｃｅとした以外は実施例１と同様にして発光ダイオードを作製した。
【０１０８】
以上のようにして作製した発光ダイオードは、白色系の発光可能であり、その色度点、色温度、演色性指数を測定した。それぞれ、色度点(ｘ＝０．３７５、ｙ＝０．３７０）、色温度４４００Ｋ、演色性指数（Ｒａ）＝８６．０であった。
図１７（ａ）、図１７（ｂ）及び図１７（ｃ）にそれぞれ、実施例２のフォトルミネセンス蛍光体、発光素子及び発光ダイオードの各発光スペクトルを示す。 また、この実施例２の発光ダイオードを１００個作製し、初期の光度に対する１０００時間発光させた後における光度を調べた。その結果、初期（寿命試験前）の光度を１００％とした場合、１０００時間経過後における平均光度は、平均して９８．８％であり特性に差がないことが確認できた。
【０１０９】
（実施例３）
実施例３の発光ダイオードは、フォトルミネセンス蛍光体としてＹ、Ｇｄ、Ｃｅの希土類元素に加えＳｍを含有させた、一般式（Ｙ0.39Ｇｄ0.57Ｃｅ0.03Ｓｍ0.01）3Ａｌ5Ｏ12蛍光体を用いた以外は、実施例１と同様に作製した。この実施例３の発光ダイオードを１００個作製し、１３０℃の高温下において評価した結果、実施例１の発光ダイオードと比較して平均温度特性が８％ほど良好であった。
【０１１０】
（実施例４）
実施例４のＬＥＤ表示器は、実施例１の発光ダイオードが、図１０に示すように銅パターンを形成したセラミックス基坂上に、１６×１６のマトリックス状に配列されて構成される。尚、実施例４のＬＥＤ表示器では、発光ダイオードが配列された基板は、フェノール樹脂からなり遮光部材５０５が一体で形成された筺体５０４内部に配置され、発光ダイオードの先端部を除いて筺体、発光ダイオード、基板及び遮光部材のー部をピグメントにより黒色に着色したシリコンゴム５０６が充填される。また、基板と発光ダイオードとの接続は、自動ハンダ実装装置を用いてハンダ付けを行った。
【０１１１】
以上のように構成されたＬＥＤ表示器を、入力される表示データをー時的に記憶するＲＡＭ及びＲＡＭに記憶されるデータを取り出して発光ダイオードを所定の明るさに点灯させるための階調信号を演算する階調制御回路と階調制御回路の出力信号でスイッチングされて発光ダイオードを点灯させるドライバーとを備えた駆動手段によって駆動することにより白黒ＬＥＤ表示装置として使用できることを確認した。
【０１１２】
【０１１３】
【０１１４】
（実施例５）
実施例５の発光ダイオードは、フォトルミネセンス蛍光体として一般式Ｙ3Ａｌ5Ｏ12：Ｃｅで表される蛍光体を用いた以外は、実施例１と同様にして作製した。この実施例５の発光ダイオードを１００個作製して諸特性を測定した。
その結果、実施例１に比較してやや黄緑色がかった白色の光を発光することができた。
【０１１５】
図１８（ａ）、図１８（ｂ）及び図１８（ｃ）にそれぞれ、実施例５のフォトルミネセンス蛍光体、発光素子及び発光ダイオードの各発光スペクトルを示す。 また、実施例５の発光ダイオードは、寿命試験においては、実施例１と同様に優れた耐候性を示していた。
【０１１６】
【０１１７】
【０１１８】
（実施例６）
実施例６の発光ダイオードは、図６に示す構成を有する面状発光の発光装置である。
発光素子として発光ピークが４５０ｎｍのＩｎ0.05Ｇａ0.95Ｎ半導体を用いた。発光素子は、洗浄させたサファイヤ基板上にＴＭＧ（トリメチルガリウム）ガス、ＴＭＩ（トリメチルインジュウム）ガス、窒素ガス及びドーパントガスをキャリアガスと共に流し、ＭＯＣＶＤ法で窒化ガリウム系化合物半導体を成膜することにより形成した。ドーパントガスとしてＳｉＨ4とＣｐ2Ｍｇと、を切り替えることによってＮ型導電性を有する窒化ガリウム半導体とＰ型導電性を有する窒化ガリウム半導体を形成しＰＮ接合を形成した。半導体発光素子としては、Ｎ型導電性を有する窒化ガリウム半導体であるコンタクト層、Ｎ型導電性を有する窒化ガリウムアルミニウム半導体であるクラッド層、Ｐ型導電性を有する窒化ガリウムアルミニウム半導体であるクラッド層、Ｐ型導電性を有する窒化ガリウム半導体であるコンタクト層を形成した。Ｎ型導電性を有するクラッド層とＰ型導電性を有するクラッド層との間にダブルへテロ接合となるＺｎドープＩｎＧａＮの活性層を形成した。なお、サファイア基板上には、低温で窒化ガリウム半導体を形成し、バッファ層として用いた。Ｐ型窒化物半導体層は、成膜後４００℃以上の温度でアニールされている。
【０１１９】
各半導体層を成膜した後、エッチングによりＰＮ各半導体表面を露出させた後、スパッタリングにより各電極をそれぞれ形成し、こうして出来上がった半導体ウエハーをスクライブラインを引いた後、外力により分割させ発光素子として発光素子を形成した。
銀メッキした銅製リードフレームの先端にカップを有するマウント・リードに発光素子をエポキシ樹脂でダイボンディングした。発光素子の各電極とマウント・リード及びインナー・リードと、をそれぞれ直径が３０μｍの金線でワイヤーボンディングし電気的導通を取った。
【０１２０】
モールド部材は、砲弾型の型枠の中に発光素子が配置されたリードフレームを挿入し透光性エポシキ樹脂を混入後、１５０℃５時間にて硬化させ青色系発光ダイオードを形成させた。青色系発光ダイオードを端面が全て研磨されたアクリル性導光板の一端面に接続させた。アクリル板の片面及び側面は、白色反射部材としてチタン酸バリウムをアクリル系バインダー中に分散したものでスクリーン印刷及び硬化させた。
【０１２１】
一方、フォトルミネセンス蛍光体は、緑色系及び赤色系をそれぞれ必要なＹ、Ｇｄ、Ｃｅ、Ｌａの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈させた。これを焼成して得られる共沈酸化物と、酸化アルミニウム、酸化ガリウムと混合して混合原料をそれぞれ得る。これにフラックスとしてフッ化アンモニウムを混合して坩堝に詰め、空気中１４００°Ｃの温度範囲で３時間焼成して焼成品を得た。焼成品をそれぞれ水中でボールミルして、洗浄、分離、乾燥、最後に篩を通して形成した。
【０１２２】
以上のようにして作製された、一般式Ｙ3（Ａｌ0.6Ｇａ0.4）5Ｏ12：Ｃｅで表される緑色系が発光可能な第１の蛍光体１２０重量部と、同様にして作製された、一般式（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：Ｃｅで表される赤色系が発光可能な第２の蛍光体１００重量部とを、エポキシ樹脂１００重量部とよく混合してスラリーとし、このスラリーを厚さ０．５ｍｍのアクリル層上にマルチコーターを用いて均等に塗布、乾燥し、厚さ約３０μｍの色変換部材として蛍光体膜を形成した。蛍光体層を導光板の主発光面と同じ大きさに切断し導光板上に配置することにより面状の発光装置を作製した。以上のように作製した発光装置の色度点、演色性指数を測定した結果、色度点は、（ｘ＝０．２９,ｙ＝０．３４）であり、演色性指数（Ｒａ）は、９２．０と三波長型蛍光灯に近い性能を示した。また、発光効率は１２ ｌｍ／ｗと白色電球並であった。さらに耐侯試験として室温６０ｍＡ通電、室温２０ｍＡ通電、６０℃９０％ＲＨ下で２０ｍＡ通電の各試験においても蛍光体に起因する変化は観測されなかった。
【０１２３】
（比較例２）
実施例６の一般式Ｙ3（Ａｌ0.6Ｇａ0.4）5Ｏ12：Ｃｅで表される緑色系が発光可能な第１の蛍光体、及び一般式（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：Ｃｅで表される赤色系が発光可能な第２の蛍光体からなるフォトルミネセンス蛍光体に代えて、それぞれペリレン系誘導体である緑色有機蛍光顔料（シンロイヒ（ＳＩＮＬＯＩＨＩ）化学製ＦＡ−００１）と赤色有機蛍光顔料（シンロイヒ化学製ＦＡ−００５）とを用いて同量で混合攪拌した以外は、実施例６と同様にして発光ダイオードを作製して実施例６と同様の耐侯試験を行った。作製した比較例１の発光ダイオードの色度点は、（ｘ＝０．３４，ｙ＝０．３５）であった。耐侯性試験として、カーボンアークで紫外線量を２００ｈｒで太陽光の１年分とほぼ同等とさせ時間と共に輝度の保持率及び色調を測定した。
【０１２４】
また、信頼性試験として発光素子を発光させ７０℃一定における時間と共に発光輝度及び色調を測定した。この結果を実施例６と共に図１３及び図１４にそれぞれ示す。図１３，１４から明らかなように、いずれの試験においても、実施例６は、比較例２より劣化が少ない。
【０１２５】
【０１２６】
【０１２７】
【０１２８】
【０１２９】
（実施例７）
ＬＥＤ素子として発光ピークが４７０ｎｍのＩｎ0.4Ｇａ0.6Ｎ半導体を用いた。発光素子は、洗浄させたサファイヤ基板上にＴＭＧ（トリメチルガリウム）ガス、ＴＭＩ（トリメチルインジュウム）ガス、窒素ガス及びドーパントガスをキャリアガスと共に流し、ＭＯＣＶＤ法で窒化ガリウム系化合物半導体を成膜させることにより形成した。ドーパントガスとしてＳｉＨ4とＣｐ2Ｍｇと、を切り替えることによってＮ型導電性を有する窒化ガリウム半導体とＰ型導電性を有する窒化ガリウム半導体を形成しＰＮ接合を形成した。ＬＥＤ素子としては、Ｎ型導電性を有する窒化ガリウム半導体であるコンタクト層、Ｐ型導電性を有する窒化ガリウムアルミニウム半導体であるクラッド層、Ｐ型導電性を有する窒化ガリウム半導体であるコンタクト層を形成した。Ｎ型導電性を有するコンタクト層とＰ型導電性を有するクラッド層との間に厚さ約３ｎｍのノンドープＩｎＧａＮの活性層を形成することにより単一井戸構造とした。なお、サファイア基板上には、低温で窒化ガリウム半導体をバッファ層として形成した。
【０１３０】
以上のように各層を形成した後、エッチングによりＰＮ各半導体表面を露出させ、スパッタリングによりｐ側及びｎ側の各電極を形成した。こうして出来上がった半導体ウエハーをスクライブラインを引いた後、外力により分割させ発光素子として発光素子を形成した。
この発光素子を銀メッキした銅製のマウントリードのカップにエポキシ樹脂を用いてダイボンディングした。発光素子の各電極とマウント・リード及びインナー・リードと、をそれぞれ直径３０μｍの金線でワイヤーボンディングし電気的導通を取った。
【０１３１】
モールド部材は、砲弾型の型枠の中に発光素子が配置されたリードフレームを挿入し透光性エポシキ樹脂を混入後、１５０℃５時間にて硬化させ青色系発光ダイオードを形成した。青色系発光ダイオードを端面が全て研磨されたアクリル性導光板の一端面に接続した。アクリル板の片面及び側面は、白色反射部材としてチタン酸バリウムをアクリル系バインダー中に分散したものをスクリーン印刷及び硬化して膜状に形成した。
【０１３２】
一方、フォトルミネセンス蛍光体は、一般式（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅで表され比較的短波長側の黄色系が発光可能な蛍光体と、一般式（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：Ｃｅで表され比較的長波長側の黄色系が発光可能な蛍光体とを以下のようにして作製して混合して用いた。これらの蛍光体は、それぞれ必要なＹ、Ｇｄ、Ｃｅの希土類元素を化学量論比で酸に溶解した溶解液を蓚酸で共沈させた。これを焼成して得られる共沈酸化物と、酸化アルミニウムと混合して混合原料をそれぞれ得る。これにフラックスとしてフッ化アンモニウムを混合して坩堝に詰め、空気中１４００℃の温度範囲で３時間焼成して焼成品を得た。焼成品をそれぞれ水中でボールミルして、洗浄、分離、乾燥、最後に篩を通して形成した。
【０１３３】
以上のように作製した比較的短波長側の黄色系蛍光体１００重量部と比較的長波長側の黄色系蛍光体１００重量部とを、アクリル樹脂１０００重量部とよく混合して押し出し成形し、厚さ約１８０μｍの色変換部材として用いる蛍光体膜を形成した。蛍光体膜を導光板の主発光面と同じ大きさに切断し導光板上に配置することにより発光装置を作製した。このようにして作製した実施例７の発光装置の色度点、演色性指数を測定した結果、色度点は、
（ｘ＝０．３３,ｙ＝０．３４）であり、演色性指数（Ｒａ）＝８８．０を示した。また、発光効率は１０ ｌｍ／ｗであった。
【０１３４】
図１９（ａ）、図１９（ｂ）及び図１９（ｃ）にはそれぞれ、実施例７に使用した、式（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅで表される蛍光体、式（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：Ｃｅで表される蛍光体及び発光素子の各発光スペクトルを示す。また、図２０には、実施例７の発光ダイオードの発光スペクトルを示す。 さらに耐侯試験として室温６０ｍＡ通電、室温２０ｍＡ通電、６０℃９０％ＲＨ下で２０ｍＡ通電の各試験においても蛍光体に起因する変化は観測されなかった。同様に、この蛍光体の含有量を種々変えることによって発光素子からの波長が変化しても所望の色度点を維持させることができる。
【０１３５】
【０１３６】
【発明の効果】
本発明に係る発光ダイオードは、所望の色を有する光を発光することができ、長時間高輝度の使用においても発光効率の劣化が少なくしかも耐候性に優れている。従って、一般的な電子機器に限られず、高い信頼性が要求される車載用、航空産業用、港内のブイ表示用及び高速道路の標識照明など屋外での表示や照明として新たな用途を開くことができる。
【図面の簡単な説明】
【図１】 本発明に係る実施の形態のリードタイプの発光ダイオードの模式的断面図である。
【図２】 本発明に係る実施の形態のチップタイプの発光ダイオードの模式的断面図である。
【図３】 （ａ）は実施形態１のセリウムで付活されたガーネット系蛍光体の励起スペクトルを示すグラフであり、（ｂ）は実施形態１のセリウムで付活されたガーネット系蛍光体の発光スペクトルを示すグラフである。
【図４】 実施の形態１の発光ダイオードの発光スペクトルを示すグラフである。
【図５】 実施形態２の発光ダイオードの発光色を説明するための色度図であり、図中、Ａ及びＢ点は発光素子が発光する光の発光色を示し、Ｃ点、Ｄ点は、それぞれ２種類のフォトルミネッセンス蛍光体からの発光色を示す。
【図６】 本発明に係る別の実施形態の面状発光光源の模式的な断面図である。
【図７】図６とは異なる面状発光光源の模式的な断面図である。
【図８】図６及び図７とは異なる面状発光光源の模式的な断面図である。
【図９】 本発明の応用例である表示装置のブロック図である。
【図１０】図９の表示装置のＬＥＤ表示器の平面図である。
【図１１】 本発明の発光ダイオード及びＲＧＢの４つの発光ダイオードを用いて一絵素を構成したＬＥＤ表示器の平面図である。
【図１２】 実施例１及び比較例１の発光ダイオードの寿命試験の結果を示すグラフであって、（ａ）は、２５℃における結果であり、（ｂ）は、６０℃，９０％ＲＨにおける結果である。
【図１３】 実施例６及び比較例２の耐候性試験の結果を示すグラフであり、（ａ）は経過時間に対する輝度保持率を示し、（ｂ）は試験前後の色調の変化を示す。
【図１４】 実施例６及び比較例２の発光ダイオードの信頼性試験における結果を示し（ａ）は輝度保持率と時間との関係、（ｂ）は色調と時間との関係を示したグラフである。
【図１５】 表１に示した蛍光体とピーク波長４６５ｎｍの青色ＬＥＤとを組み合わせた発光ダイオードにより実現できる色再現範囲を示す色度図である。
【図１６】 表１に示した蛍光体とピーク波長４６５ｎｍの青色ＬＥＤとを組み合わせた発光ダイオードにおける蛍光体の含有量を変化させたときの発光色の変化を示す色度図である。
【図１７】 （ａ）は、（Ｙ0.6Ｇｄ0.4）3Ａｌ5Ｏ12：Ｃｅで表される実施例２のフォトルミネセンス蛍光体の発光スペクトルを示すグラフであり、（ｂ）Ｂは、発光ピーク波長４６０ｎｍを有する実施例２の発光素子の発光スペクトルを示すグラフであり、（ｃ）は、実施例２の発光ダイオードの発光スペクトルを示すグラフである。
【図１８】 （ａ）は、Ｙ3Ａｌ5Ｏ12：Ｃｅで表される実施例５のフォトルミネセンス蛍光体の発光スペクトルを示すグラフであり、（ｂ）は、発光ピーク波長４５０ｎｍを有する実施例５の発光素子の発光スペクトルを示すグラフであり、（ｃ）は、実施例５の発光ダイオードの発光スペクトルを示すグラフである。
【図１９】 （ａ）は、（Ｙ0.8Ｇｄ0.2）3Ａｌ5Ｏ12：Ｃｅで表される実施例７のフォトルミネセンス蛍光体の発光スペクトルを示すグラフであり、（ｂ）は、（Ｙ0.4Ｇｄ0.6）3Ａｌ5Ｏ12：Ｃｅで表される実施例７のフォトルミネセンス蛍光体の発光スペクトルを示すグラフであり、（ｃ）は、発光ピーク波長４７０ｎｍを有する実施例７の発光素子の発光スペクトルを示すグラフである。
【図２０】実施例７の発光ダイオードの発光スペクトルを示すグラフである。
【符号の説明】
１００，２００…発光ダイオード、
１０１…コーティング樹脂、
１０２，２０２，７０２…発光素子（ＬＥＤチップ）、
１０３，２０３…導電性ワイヤー、
１０４…モールド部材、
１０５…マウント・リード、
１０５ａ…カップ部、
１０６…インナーリード、
２０１，７０１…コーティング部、
２０３…導電性ワイヤー、
２０４，５０４…筺体、
２０５…端子金属、
５０１…発光ダイオード、
５０５…遮光部材、
５０６…シリコンゴム、
６０１…ＬＥＤ表示器、
６０２…ドライバー回路、
６０３…画像データ記憶手段（ＲＡＭ）、
６０４…階調制御手段、
６１０…駆動回路、
７０３…金属基板、
７０４…導光板、
７０５，７０７…反射部材、
７０６…散乱シート。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a light emitting diode used for an LED display, a backlight light source, a traffic light, an illuminated switch, various indicators, and the like, and particularly includes a photoluminescence phosphor that emits light by converting the wavelength of light generated by the light emitting element. The present invention relates to a light emitting diode.
[0002]
[Prior art]
The light-emitting diode is small, efficient and capable of emitting brightly colored light, and is a semiconductor element, so there is no fear of ball breakage, excellent initial drive characteristics and earthquake resistance, and repeated ON / OFF lighting. It has the feature that it is strong against. Therefore, it is widely used as various indicators and various light sources. Recently, ultra-bright and highly efficient RGB (red, green, blue) light emitting diodes have been developed, and large screen LED displays using these light emitting diodes have been used. This LED display has an excellent characteristic that it can be operated with a small amount of power, is lightweight and has a long life, and is expected to be used more and more in the future.
[0003]
Furthermore, recently, various attempts have been made to construct a white light-emitting light source using a light-emitting diode. In order to obtain white light using a light emitting diode, since the light emitting diode has a monochromatic peak wavelength, for example, it is necessary to provide three light emitting elements of R, G, and B close to each other to emit light and to diffuse and mix colors. is there. When white light is generated by such a configuration, there is a problem that a desired white color cannot be generated due to variations in color tone, luminance, and the like of the light emitting elements. Further, when the light emitting elements are formed using different materials, the driving power of each light emitting element is different, and it is necessary to individually apply a predetermined voltage, which causes a problem that the driving circuit becomes complicated. . Furthermore, since the light-emitting element is a semiconductor light-emitting element, the temperature characteristics and changes over time are different individually, the color tone changes depending on the usage environment, and the light generated by each light-emitting element cannot be mixed uniformly. It had many problems such as unevenness. That is, the light-emitting diode is effective as a light-emitting device that emits individual colors, but a satisfactory light source that can generate white light using a light-emitting element has not been obtained.
[0004]
In view of this, the present applicant has disclosed a light emitting diode in which light previously generated by a light emitting element is color-converted and output by a phosphor, as disclosed in JP-A-5-152609, JP-A-7-99345, and JP-A-7. -176794 and JP-A-8-8614. The light-emitting diodes disclosed therein can emit other light emission colors such as white light using one kind of light-emitting element, and are configured as follows.
Specifically, in the light emitting diode disclosed in the above publication, a light emitting element having a large energy band gap of the light emitting layer is disposed on a cup provided at the tip of the lead frame, and the resin mold member covering the light emitting element is used. And a phosphor that absorbs light from the light emitting element and emits light having a wavelength different from that of the absorbed light (wavelength conversion).
[0005]
In the light-emitting diode disclosed above, a light-emitting element capable of emitting blue light is used as the light-emitting element, and the light-emitting element is made of a resin containing a phosphor that absorbs light emission and emits yellow light. By molding, a light emitting diode capable of emitting white light by color mixing can be manufactured.
[0006]
[Problems to be solved by the invention]
[0007]
[0008]
However,Conventional light emitting diodes also have the following problems.
That is, the conventional light emitting diode has a problem in that the color tone may be shifted due to deterioration of the phosphor, or the efficiency of external extraction of darkened light may decrease. Here, darkening means that, for example, when an inorganic phosphor such as a (Cd, Zn) S phosphor is used, a part of a metal element constituting the phosphor is deposited or altered. In the case of using an organic phosphor material, it means that the double bond is broken. In particular, when a semiconductor having a high energy band gap that is a light emitting element is used and the conversion efficiency of the phosphor is improved (that is, the energy of light emitted by the semiconductor is increased, and the phosphor can absorb the light). Light above the threshold increases and more light is absorbed), or when the amount of phosphor used is reduced (ie, the amount of energy irradiated to the phosphor is relatively large) Etc.), the energy of the light absorbed by the phosphor inevitably increases, so that the phosphor is significantly deteriorated.
Further, when the light emission intensity of the light emitting element is further increased and used for a long time, the phosphor is further deteriorated.
[0009]
Further, the phosphor provided in the vicinity of the light emitting element is also exposed to a high temperature due to a temperature rise of the light emitting element or an external environment (for example, due to sunlight when used outdoors), and deteriorates due to this heat. There is a case.
Furthermore, some phosphors are accelerated in deterioration by moisture entering from the outside, moisture contained inside during production, and the light and heat. Furthermore, when an ionic organic dye is used, electrophoresis may occur in the vicinity of the chip due to a DC electric field, and the color tone may change.
[0010]
[Means for Solving the Problems]
The light emitting diode according to the present invention is configured as follows.
That is,An LED chip having a quantum well structure and a light emitting layer made of a gallium nitride based semiconductor containing In, and having an emission spectrum peak in the range of 420 to 490 nm,
A translucent resin disposed in the vicinity of the LED chip;
A photoluminescent phosphor contained in the translucent resin, which partially absorbs the blue light emission of the LED chip and emits an emission spectrum having a peak at 530 to 570 nm and extending to at least 700 nm. A luminescent phosphor capable of having a garnet structure and containing cerium,
The emission spectrum of the light that has passed through the LED chip without being absorbed by the photoluminescence phosphor and the emission spectrum of the light emitted from the photoluminescence phosphor overlap each other, and a white color is obtained by mixing both emission spectra. A light-emitting diode capable of emitting light of a system.
[0011]
[0012]
[0013]
[0014]
[0015]
[0016]
[0017]
Since the light-emitting diode of the present invention uses a light-emitting element made of a gallium nitride-based compound semiconductor that can emit light with high luminance, it can emit light with high luminance. Further, in the light-emitting diode, the photoluminescent phosphor used is used for a long time by using an extremely excellent light fastness with little change in fluorescence characteristics even when exposed to strong light for a long time. Light-emitting diodes that can reduce the deterioration of characteristics with respect to the light source, can reduce not only strong light from the light-emitting element, but also external light (such as sunlight containing ultraviolet rays) during outdoor use, and extremely little color shift and brightness reduction Can provide.
[0018]
In addition, the light-emitting device of the present invention can also be used for applications that require a relatively fast response speed of 120 nsec, for example, when the photoluminescent phosphor used has a short afterglow.
[0019]
[0020]
[0021]
[0022]
[0023]
[0024]
[0025]
[0026]
In general, phosphors that absorb short wavelength light and emit long wavelength light are more efficient than phosphors that absorb long wavelength light and emit short wavelength light. Good. As the light-emitting element, it is preferable to use a device that emits visible light rather than a device that emits ultraviolet light that degrades a resin (such as a mold member or a coating member). Therefore, in the light emitting diode of the present invention, the main peak of the light emission spectrum of the light emitting element has a relatively short wavelength in the visible light in order to improve the light emission efficiency and extend the life.420nm to 490nmIt is preferable that the main emission wavelength of the photoluminescent phosphor is set longer than the main peak of the light emitting element. In addition, by doing so, since the light converted by the phosphor has a longer wavelength than the light emitted from the light emitting element, the converted light reflected by the phosphor or the like is applied to the light emitting element. However, it is not absorbed by the light emitting element (because the energy of the converted light is smaller than the band gap energy). In this way, the light reflected by the phosphor or the like is reflected by the cup on which the light emitting element is placed, and more efficient light emission is possible.
[0027]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
The
[0028]
In the light emitting diode configured as described above, a part of light emitted from the light emitting element (LED chip) 102 (hereinafter referred to as LED light) excites the photoluminescent phosphor contained in the
[0029]
2 is a chip-type light emitting diode, in which a light emitting element (LED chip) 202 is provided in a concave portion of a
[0030]
The light emitting diode including the photoluminescent phosphor described above has the following characteristics.
1. Normally, light emitted from a light emitting element (LED) is emitted through an electrode that supplies power to the light emitting element. The emitted light is shaded by the electrodes formed in the light emitting element, has a specific light emission pattern, and therefore is not uniformly emitted in all directions. However, since a light emitting diode including a phosphor scatters light from the light emitting element by the phosphor and emits light, it can emit light uniformly over a wide range without forming an unnecessary light emission pattern. it can.
[0031]
2. Even though light from a light emitting element (LED) has a monochromatic peak, it has a certain spectral width and thus has high color rendering properties. This is an indispensable advantage when used as a light source that requires a relatively wide range of wavelengths. For example, when used as a light source of a scanner, it is preferable that the spectrum width is wide.
The light-emitting diodes of
[0032]
In general, phosphors that absorb short wavelength light and emit long wavelength light are more efficient than phosphors that absorb long wavelength light and emit short light. Therefore, in the light emitting diode of the present invention, it is preferable to use a gallium nitride based semiconductor light emitting element (light emitting element) capable of emitting blue light with a short wavelength. Needless to say, it is preferable to use a light-emitting element with high luminance.
[0033]
As a photoluminescent phosphor suitable for use in combination with such a gallium nitride based semiconductor light emitting device,
1. Since it is provided in the vicinity of the
2. In order to be excited by the
3. Green to red light can be emitted so that it is mixed with blue light to become white.
4). It is provided in the vicinity of the
5. The color tone can be continuously changed by changing the composition ratio or the mixing ratio of a plurality of phosphors.
6). The weather resistance depends on the environment in which the light-emitting diode is used,
Such characteristics are required.
[0034]
Embodiment 1 FIG.
The light-emitting diode according to the first embodiment of the present invention includes a gallium nitride compound semiconductor element that has a high-energy band gap in a light-emitting layer and can emit blue light, and photoluminescence that can emit yellow light. A garnet-based photoluminescence phosphor activated with cerium, which is a phosphor, is combined. As a result, in the light emitting diode of the first embodiment, the white light is emitted by mixing the blue light emitted from the
[0035]
In addition, since the garnet-based photoluminescent phosphor activated by cerium used in the light emitting diode of Embodiment 1 has light resistance and weather resistance, high energy in the visible light range emitted from the
Hereinafter, each component of the light emitting diode of Embodiment 1 will be described in detail.
[0036]
(Photoluminescence phosphor)
The photoluminescence phosphor used in the light-emitting diode of Embodiment 1 is a photoluminescence phosphor that emits light having a wavelength different from that of the excited light when excited by visible light or ultraviolet light emitted from the semiconductor light emitting layer. It is. Specifically, the photoluminescence phosphor includes at least one element selected from Y, Lu, Sc, La, Gd and Sm and at least one element selected from Al, Ga and In, and cerium. It is a garnet phosphor activated by In the present invention, as the phosphor, an yttrium / aluminum / garnet phosphor containing Y and Al and activated by cerium, or a general formula (Re1-rSmr)Three(Al1-sGas)FiveO12: It is preferable to use a phosphor represented by Ce (where 0 ≦ r <1, 0 ≦ s ≦ 1, Re is at least one selected from Y and Gd). When the LED light emitted from the light emitting element using a gallium nitride compound semiconductor and the fluorescent light emitted from the photoluminescent phosphor whose body color is yellow are in a complementary color relationship, the LED light and the fluorescent light are mixed. As a whole, white light can be output.
[0037]
In the first embodiment, the photoluminescent phosphor is used by being mixed with the
[0038]
The content distribution of the photoluminescent phosphor also affects the color mixing property and durability. For example, when the distribution concentration of the photoluminescent phosphor is increased from the surface of the coating part or mold member containing the photoluminescent phosphor toward the light emitting element, it is more affected by moisture from the external environment. It can be made difficult and deterioration due to moisture can be prevented. On the other hand, when the photoluminescent phosphor is distributed from the light emitting element toward the surface side of the mold member or the like so that the distribution concentration becomes higher, it is susceptible to moisture from the external environment, but the heat generation and irradiation from the light emitting element. It is possible to reduce the influence of intensity and the like, and to suppress deterioration of the photoluminescent phosphor. Such distribution of the photoluminescence phosphor is realized by adjusting the member containing the photoluminescence phosphor, the forming temperature, the viscosity, the shape of the photoluminescence phosphor, the particle size distribution, and the like. The distribution state is set in consideration of the use condition of the light emitting diode.
[0039]
The photoluminescent phosphor of Embodiment 1 is disposed in contact with or close to the
[0040]
In addition, since the photoluminescent phosphor of Embodiment 1 has a garnet structure, it is resistant to heat, light and moisture, and as shown in FIG. 3A, the peak of the excitation spectrum can be around 450 nm. In addition, as shown in FIG.570nmIt has a broad emission spectrum that is near and has a tail that reaches 700 nm. In addition, the photoluminescence phosphor of Embodiment 1 can increase the excitation light emission efficiency in a long wavelength region of 460 nm or more by containing Gd in the crystal. As the Gd content increases, the emission peak wavelength shifts to a longer wavelength, and the entire emission wavelength also shifts to the longer wavelength side. That is, when a strong reddish emission color is required, it can be achieved by increasing the amount of substitution by Gd. On the other hand, as Gd increases, the emission luminance of photoluminescence by blue light tends to decrease.
[0041]
In particular, in the composition of a YAG-based phosphor having a garnet structure, by replacing a part of Al with Ga, the emission wavelength is shifted to the short wavelength side, and a part of Y in the composition is replaced with Gd. As a result, the emission wavelength is shifted to the longer wavelength side. Table 1 shows the general formula (Y1-aGda)Three(Al1-bGab)FiveO12: Shows the composition of the YAG phosphor represented by Ce and the light emission characteristics thereof.
[0042]
Table 1
Each characteristic shown in Table 1 was measured by exciting with blue light of 460 nm. The luminance and efficiency in Table 1 are shown as relative values with the material of 1) as 100.
When Al is replaced by Ga, it is preferable to set the ratio between Ga: Al = 1: 1 and 4: 6 in consideration of the light emission efficiency and the light emission wavelength. Similarly, when a part of Y is replaced with Gd, it is preferable to set the ratio in the range of Y: Gd = 9: 1 to 1: 9, preferably in the range of 4: 1 to 2: 3. Is more preferable. This is because when the Gd substitution amount is less than 20%, the green component is large and the red component is small. When the Gd substitution amount is 60% or more, the redness component can be increased, but the luminance is drastically lowered.
[0044]
In particular, depending on the emission wavelength of the light emitting element, the ratio of Y and Gd in the YAG phosphor is set in the range of Y: Gd = 4: 1 to 2: 3, so that one kind of yttrium aluminum garnet is used. A light emitting diode capable of emitting white light substantially along a black body radiation locus can be configured by using a system phosphor. In addition, when the ratio of Y and Gd in the YAG phosphor is set in a range of Y: Gd = 2: 3 to 1: 4, a light emitting diode capable of emitting light of a light bulb color with a low luminance is formed. Can do. In addition, by setting the Ce content (substitution amount) in the range of 0.003 to 0.2, the relative luminous intensity of the light emitting diode can be made 70% or more. If the content is less than 0.003, the number of excited luminescence centers of photoluminescence due to Ce decreases, resulting in a decrease in luminous intensity. Conversely, when the content is greater than 0.2, concentration quenching occurs.
[0045]
As described above, the emission wavelength can be shifted to a short wavelength by substituting the Al part of the composition with Ga, and the emission wavelength can be increased by substituting the Y part of the composition with Gd. It can be shifted to the wavelength. In this way, it is possible to continuously adjust the emission color by changing the composition. In addition, the Hg emission line having a wavelength of 254 nm or 365 nm is hardly excited, and the excitation efficiency by the LED light from the blue light emitting element near 450 nm is high. Furthermore, ideal conditions for converting blue light emission of the nitride semiconductor light emitting device into white light emission, such as the peak wavelength being continuously changed by the composition ratio of Gd, are provided.
[0046]
In Embodiment 1, a light-emitting element using a gallium nitride-based semiconductor and photoluminescence fluorescence in which a rare earth element samarium (Sm) is contained in a yttrium-aluminum-garnet phosphor (YAG) activated by cerium. By combining with the body, the light emission efficiency of the light emitting diode can be further improved.
[0047]
Such a photoluminescent phosphor uses an oxide or a compound that easily becomes an oxide at a high temperature as a raw material of Y, Gd, Ce, Sm, Al and Ga, and has them in a predetermined stoichiometric ratio. Mix well to prepare a mixed raw material, mix an appropriate amount of fluoride such as ammonium fluoride as a flux into the prepared mixed raw material and pack it in a crucible, and in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours It can be produced by firing to obtain a fired product, followed by pole milling in water, washing, separating, drying and finally passing through a sieve.
[0048]
In the above production method, the mixed raw material is a coprecipitated oxide obtained by firing a co-precipitated solution of oxalic acid obtained by dissolving a rare earth element of Y, Gd, Ce, and Sm in acid at a stoichiometric ratio. Alternatively, aluminum oxide or gallium oxide may be mixed.
[0049]
General formula (Y1-pqrGdpCeqSmr)ThreeAlFiveO12The photoluminescence phosphor that can be represented by the formula can increase the excitation emission efficiency particularly in the long wavelength region of 460 nm or more by containing Gd in the crystal. Further, by increasing the gadolinium content, the emission peak wavelength can be shifted from 530 nm to 570 nm to a longer wavelength, and the entire emission wavelength can also be shifted to the longer wavelength side. When a strong reddish emission color is required, it can be achieved by increasing the amount of substitution of Gd. On the other hand, as Gd increases, the emission luminance of photoluminescence by blue light gradually decreases. Therefore, p is preferably 0.8 or less, and more preferably 0.7 or less. More preferably, it is 0.6 or less.
[0050]
In addition, the general formula (Y1-pqrGdpCeqSmr)ThreeAlFiveO12The photoluminescent phosphor containing Sm represented by the formula can reduce the decrease in temperature characteristics even when the content of Gd is increased. That is, by containing Sm, the deterioration of the light emission luminance of the photoluminescent phosphor at a high temperature is greatly improved. The degree of improvement increases as the content of Gd increases. In particular, a phosphor having a composition in which the Gd content is increased to add redness to the color of light emitted from photoluminescence deteriorates the temperature characteristics. Therefore, it is effective to improve the temperature characteristics by containing Sm. . The temperature characteristic referred to here is the relative value (%) of the light emission luminance at a high temperature (200 ° C.) of the phosphor with respect to the excitation light emission luminance at normal temperature (25 ° C.) by blue light of 450 nm. The Sm content r is preferably in the range of 0.0003 ≦ r ≦ 0.08, whereby the temperature characteristics can be 60% or more. If r is smaller than this range, the effect of improving the temperature characteristics is reduced. On the other hand, when r is larger than this range, the temperature characteristic is decreased. Further, the content r of Sm is more preferably in the range of 0.0007 ≦ r ≦ 0.02, whereby the temperature characteristic can be made 80% or more.
[0051]
The Ce content q is preferably in the range of 0.003 ≦ q ≦ 0.2, whereby the relative light emission luminance can be made 70% or more. Here, the relative light emission luminance means the light emission luminance when the light emission luminance of the phosphor with q = 0.03 is 100%.
When the Ce content q is 0.003 or less, the number of excited emission centers of photoluminescence due to Ce decreases, and thus the luminance decreases. Conversely, when the Ce content q exceeds 0.2, concentration quenching occurs. Here, concentration quenching means that when the concentration of the activator is increased in order to increase the luminance of the phosphor, the emission intensity decreases at a concentration higher than a certain optimum value.
[0052]
In the light-emitting diode of the present invention, two or more types (Y, Y, Al, Ga, Y, Gd and Sm) are different.1-pqrGdpCeqSmr)ThreeAlFiveO12A mixture of photoluminescent phosphors may be used. As a result, the RGB wavelength components during the fluorescence emission can be increased, and for example, a color filter can be used for a full color liquid crystal display device.In the light emitting diode of the present invention, the photoluminescence phosphor may include two or more yttrium / aluminum / garnet phosphors each having a different composition, each containing Y and Al, and each activated with cerium. Good. Accordingly, the emission spectrum of the photoluminescence phosphor can be adjusted in accordance with the characteristics (emission wavelength) of the light emitting element, and light emission of a desired emission color can be performed. Furthermore, in the light emitting diode of the present invention, in order to set the light emission wavelength of the light emitting device to a predetermined value, each of the photoluminescent phosphors has a general formula (Re1-rSmr)Three(Al1-sGas)FiveO12: Ce (where 0 ≦ r <1, 0 ≦ s ≦ 1, Re is at least one selected from Y and Gd), and includes two or more phosphors having different compositions from each other. preferable. In the light emitting diode of the present invention, the photoluminescent phosphor may have the general formula Y in order to adjust the emission wavelength.Three(Al1-sGas)FiveO12: A first phosphor represented by Ce and a general formula ReThreeAlFiveO12: A second phosphor represented by Ce may be included. However, 0 ≦ s ≦ 1, Re is at least one selected from Y, Ga, and La. Further, in the light emitting diode of the present invention, in order to adjust the emission wavelength, each of the photoluminescence phosphors is yttrium / aluminum / garnet phosphor, in which part of yttrium is substituted with gadolinium, and the amount of substitution is mutually different. Different first phosphors and second phosphors may be included.
[0053]
(
As shown in FIGS. 1 and 2, the light emitting element is preferably embedded in a mold member. The light emitting element used for the light emitting diode of the present invention is a gallium nitride compound semiconductor capable of efficiently exciting a garnet phosphor activated by cerium. The light-emitting
[0054]
When a gallium nitride compound semiconductor is used, a material such as sapphire, spinel, SiC, Si, or ZnO can be used for the semiconductor substrate, but a sapphire substrate is used to form gallium nitride with good crystallinity. Is preferred. A gallium nitride semiconductor layer is formed on the sapphire base slope so as to form a PN junction through a buffer layer of GaN, AlN or the like. Gallium nitride semiconductors exhibit N-type conductivity without doping impurities, but in order to form an N-type gallium nitride semiconductor having desired characteristics (carrier concentration, etc.) such as improving luminous efficiency, an N-type dopant is used. It is preferable to appropriately dope Si, Ge, Se, Te, C and the like. On the other hand, when forming a p-type gallium nitride semiconductor, it is doped with Zn, Mg, Be, Ca, Sr, Ba, etc. which are p-type dopants. Since a gallium nitride compound semiconductor is difficult to be converted into a p-type simply by doping a p-type dopant, it is preferable to convert it into a p-type by heating in a furnace, low-energy electron beam irradiation, plasma irradiation, or the like after introduction of the p-type dopant. After exposing the surfaces of the p-type and N-type gallium nitride semiconductors by etching or the like, each electrode having a desired shape is formed on each semiconductor layer by using a sputtering method, a vacuum deposition method, or the like.
[0055]
Next, a method of directly cutting a semiconductor wafer or the like formed as described above with a dicing saw, or a method of cutting a groove having a width wider than the cutting edge width (half cut) and then breaking the semiconductor wafer with an external force Alternatively, the semiconductor wafer is chip-shaped using a method in which a very thin scribe line (meridian line) is drawn on the semiconductor wafer by a scriber in which the diamond needle at the tip moves linearly, for example, in a grid pattern, and then the wafer is broken by an external force. Cut into. In this way, a light emitting element made of a gallium nitride compound semiconductor can be formed.
[0056]
In the case where white light is emitted in the light emitting diode according to the first embodiment, the emission wavelength of the light emitting element is considered in consideration of the complementary color relationship with the photoluminescent phosphor and the deterioration of the resin.Is 4It is set to 20 nm or more and 490 nm or less. In order to further improve the efficiency of the light emitting element and the photoluminescence phosphor, it is more preferable to set the wavelength to 450 nm or more and 475 nm or less. An example of the emission spectrum of the white light emitting diode of Embodiment 1 is shown in FIG. The light-emitting diode exemplified here is of the lead type shown in FIG. 1, and uses a light-emitting element and a photoluminescent phosphor of Example 1 described later. Here, in FIG. 4, light emission having a peak in the vicinity of 450 nm is light emission from the light emitting element, and light emission having a peak in the vicinity of 570 nm is light emission of photoluminescence excited by the light emitting element.
[0057]
In addition, a white light emitting diode that combines the phosphor shown in Table 1 and a blue LED (light emitting element) having a peak wavelength of 465 nm has a color reproduction range that can be realized.FIG.Shown in Since the emission color of the white light emitting diode is located on a straight line connecting the chromaticity point originating from the blue LED and the chromaticity point originating from the phosphor, the phosphors 1) to 7) in Table 1 are used. By using a wide white area in the center of the chromaticity diagram (FIG.It can cover all the part with the middle diagonal line).FIG.These show changes in the emission color when the phosphor content in the white light emitting diode is changed. Here, the content of the phosphor is shown as a weight percent with respect to the resin used in the coating portion.FIG.As is clear from the above, if the amount of the phosphor is increased, it approaches the emission color of the phosphor, and if it is decreased, it approaches the blue LED.
[0058]
In the present invention, in addition to a light emitting element that generates light for exciting the phosphor, a light emitting element that does not excite the phosphor can be used together. Specifically, in addition to a light-emitting element that is a nitride-based compound semiconductor that can excite a phosphor, the light-emitting layer that does not substantially excite the phosphor has a light-emitting layer of gallium phosphide, gallium aluminum arsenide, gallium arsenide phosphorus, or indium aluminum phosphide. The light emitting elements such as are arranged together. In this way, light from the light emitting element that does not excite the phosphor is emitted to the outside without being absorbed by the phosphor. Thus, a light emitting diode capable of emitting red and white can be obtained.
Hereinafter, other components of the light emitting diode of FIGS. 1 and 2 will be described.
[0059]
(
The
[0060]
(Mount Lead 105)
The
[0061]
Adhesion between the light emitting
[0062]
(Inner lead 106)
The
[0063]
The inner lead can be formed by punching using a mold so as to have a desired shape. Furthermore, after punching and forming the inner leads, the desired end face area and end face height may be adjusted by applying pressure from the end face direction.
In addition, the inner lead is required to have good connectivity and electrical conductivity with a bonding wire or the like that is a conductive wire. The specific electric resistance is preferably 300 μΩ · cm or less, more preferably 3 μΩ · cm or less. Examples of materials that satisfy these conditions include iron, copper, iron-containing copper, tin-containing copper and copper, gold, silver plated aluminum, iron, copper, and the like.
[0064]
(Coating part 101)
The
[0065]
(Mold member 104)
The
[0066]
Moreover, you may make it contain in both a coating part and a mold member. Furthermore, the coating part may be made of a resin containing a photoluminescent phosphor, and the mold member may be formed using glass which is a member different from the coating part. Can produce a light emitting diode with less productivity. In some applications, the mold member and the coating portion may be formed using the same member in order to match the refractive index. In the present invention, by adding a diffusing agent or a coloring agent to the mold member, it is possible to hide the coloring of the phosphor viewed from the light emission observation surface side and to improve the color mixing property. That is, the phosphor absorbs the blue component of the strong external light and emits light, and appears to be colored yellow.
However, the diffusing agent contained in the mold member makes the mold member milky white and the colorant is colored in a desired color. Thereby, the color of the phosphor is not observed from the emission observation surface. Furthermore, when the main light emission wavelength of the light-emitting element is 430 nm or more, it is more preferable to contain an ultraviolet absorber as a light stabilizer.
[0067]
2. Implementation of the Invention
The light-emitting diode according to
[0068]
As for the phosphor, the general formula (Re1-rSmr)Three(Al1-sGas)FiveO12A phosphor activated with cerium represented by Ce can also be used. However, 0 <r ≦ 1, 0 ≦ s ≦ 1, and Re is at least one selected from Y, Gd, and La. This makes it possible to reduce phosphor alteration even when light having a high energy in the visible light range emitted from the light emitting element is irradiated with high brightness for a long time or under the use of various external environments. A light-emitting diode having a desired light-emitting component with a high luminance and extremely little deviation or emission luminance reduction can be configured.
[0069]
(Photoluminescence phosphor of Embodiment 2)
The photoluminescent phosphor used in the light emitting diode of the second embodiment will be described in detail. In the second embodiment, as described above, the configuration is the same as in the first embodiment, except that a photoluminescent phosphor activated with two or more types of cerium having different compositions is used as the photoluminescent phosphor. The method of using the phosphor is the same as in the embodiment.
[0070]
As in the first embodiment, the light-emitting diode can have a strong weather resistance characteristic by changing the distribution of the photoluminescent phosphors in various ways (for example, by providing a concentration gradient as the distance from the light-emitting element increases). Such distribution can be variously adjusted by adjusting the member containing the photoluminescent phosphor, the forming temperature, the viscosity, the shape of the photoluminescent phosphor, the particle size distribution, and the like. Therefore, in the second embodiment, the distribution density of the phosphor is set in accordance with the use conditions and the like. In the second embodiment, the luminous efficiency is improved by devising the arrangement of two or more kinds of phosphors corresponding to the light output from the light emitting elements (for example, arranging them in order from the side closer to the light emitting elements). Can be high.
[0071]
The light-emitting diode of
[0072]
The yttrium-aluminum-garnet phosphor (YAG phosphor) activated by cerium used in the second embodiment has a garnet structure as in the first embodiment, and is resistant to heat, light, and moisture.
[0073]
Of the composition of YAG phosphors with a garnet structure, the emission wavelength is shifted to the short wavelength side by substituting part of Al with Ga, and part of Y of the composition is replaced with Gd and / or La. As a result, the emission wavelength is shifted to the longer wavelength side. The substitution of Al by Ga is preferably Ga: Al = 1: 1 to 4: 6 in consideration of light emission efficiency and light emission wavelength. Similarly, substituting a part of Y with Gd and / or La is Y: Gd and / or La = 9: 1 to 1: 9, more preferably Y: Gd and / or La = 4. : 1 to 2: 3. If the substitution is less than 20%, the green component is large and the red component is small. On the other hand, at 60% or more, although the reddish component increases, the luminance rapidly decreases.
[0074]
Such photoluminescent phosphors use oxides or compounds that easily become oxides at high temperatures as raw materials for Y, Gd, Ce, La, Al, Sm and Ga, and they are added in a stoichiometric ratio. Mix thoroughly to obtain the raw material. Alternatively, a coprecipitated oxide obtained by calcining a solution obtained by coprecipitation of oxalic acid with a solution obtained by dissolving a rare earth element of Y, Gd, Ce, La, and Sm in an acid in a stoichiometric ratio with oxalic acid, and aluminum oxide or gallium oxide. To obtain a mixed raw material. An appropriate amount of fluoride such as ammonium fluoride is mixed with this as a flux and packed in a crucible, fired in air at a temperature range of 1350 to 1450 ° C. for 2 to 5 hours to obtain a fired product, and then the fired product is ball milled in water. And can be obtained by washing, separating, drying and finally passing through a sieve.
[0075]
In the second embodiment, yttrium / aluminum / garnet phosphors activated with two or more types of cerium having different compositions may be used in combination, or may be arranged independently (for example, laminated). It may be used. When two or more kinds of phosphors are mixed and used, a color conversion part can be formed relatively easily with high productivity, and when two or more kinds of phosphors are arranged independently, the desired color is obtained. By superimposing until it becomes, color adjustment can be performed after formation. In addition, when phosphors are arranged and used independently, a phosphor that easily absorbs and emits light on the shorter wavelength side is provided closer to the LED element, and a longer wavelength than that of the LED. It is preferable to arrange a phosphor that easily absorbs and emits light on the side. This makes it possible to efficiently absorb and emit light.
[0076]
As described above, the light emitting diode of the second embodiment uses two or more types of yttrium / aluminum / garnet phosphors having different compositions as the fluorescent material. As a result, a light emitting diode capable of efficiently emitting a desired emission color can be configured. That is, the emission wavelength of light emitted from the semiconductor light emitting element isFIG.Is located on the line from point A to point B in the chromaticity diagram shown in Fig. 2, the chromaticity points (C point and D point) of two or more types of yttrium / aluminum / garnet phosphors having different compositions.FIG.It is possible to emit an arbitrary emission color within the oblique line surrounded by the points A, B, C and D.
[0077]
In the second embodiment, it can be adjusted by variously selecting the composition of the LED element and the phosphor or the amount thereof. In particular, by compensating for the variation in the emission wavelength of the LED element by selecting a predetermined phosphor corresponding to the emission wavelength of the LED element, a light emitting diode with less variation in the emission wavelength can be configured. Further, by selecting the emission wavelength of the fluorescent material, a light emitting diode including RGB light emission components with high luminance can be configured. Furthermore, since the yttrium aluminum garnet (YAG) phosphor used in
[0078]
In addition, the light emitting diodes of
[0079]
(Surface emitting light source)
The example of the planar light emission source which is another embodiment which concerns on this inventionFIG.Shown in
FIG.In the planar light source shown in FIG. 2, the photoluminescent phosphor used in
[0080]
In detail,FIG.In the planar light source, the
[0081]
Similarly, a
In the liquid crystal display device using the planar light emitting diode, for example, liquid crystal is injected between glass substrates (not shown) on which one light-transmitting conductive pattern is formed on one main surface of the
[0082]
An example of a planar light emitting device which is another embodiment according to the present invention,7 and 8And show.FIG.The light emitting device shown in FIG. 1 converts blue light generated by the
[0083]
FIG.The light emitting device shown in FIG. 1 is a
[0084]
<Application example>
(Display device)
Next, the display device according to the present invention will be described.FIG.These are block diagrams which show the structure of the display apparatus which concerns on this invention. The display deviceFIG.As shown in FIG. 4, the
[0085]
The
[0086]
That is, an LED display that uses three RGB light-emitting diodes to display a white display needs to adjust and display the light-emitting output of each RGB light-emitting diode. Since each light emitting diode must be controlled in consideration of the above, there is a problem that a driving circuit for driving the LED display is complicated. However, in the display device of the present invention, the
[0087]
In addition, an LED display that displays white light using three light emitting diodes of RGB has three light emitting diodes for each pixel in order to display white by combining three light emitting diodes of RGB. At the same time, it is necessary to emit light and mix colors, and the display area per pixel becomes large, and high-definition display cannot be performed. However, since the LED display in the display device of the present invention can display white with one light emitting diode, it can display white with higher definition. Further, the LED display that displays by mixing the three light-emitting diodes may change the display color by partially blocking one of the RGB light-emitting diodes depending on the viewing direction and angle. This is not the case with containers.
[0088]
As described above, the display device including the LED display using the light-emitting diode capable of emitting white light according to the present invention can have higher definition, and can display stable white light. It has the feature that color unevenness can be reduced. In addition, the LED display capable of white display according to the present invention has less irritation to the human eye than the conventional LED display using only red and green, and is suitable for long-time use.
[0089]
(An example of another display device using the light emitting diode of the present invention)
By using the light emitting diode of the present invention,FIG.As shown in FIG. 3, an LED display can be configured in which one light emitting diode is obtained by adding the light emitting diode of the present invention to three RGB light emitting diodes. A display device that can display various images can be configured by connecting the LED display and a predetermined drive circuit. The drive circuit in this display device, like a monochrome display device, stores image data storage means (RAM) that temporarily stores input display data and each light-emitting diode based on the data stored in the RAM. A gradation control circuit that calculates a gradation signal for lighting at a predetermined brightness, and a driver that is switched by an output signal of the gradation control circuit to turn on each light-emitting diode. However, this drive circuit requires a dedicated circuit for controlling each light emitting diode that emits light in RGB and white colors.
[0090]
The gradation control circuit calculates the lighting time of each light emitting diode from the data stored in the RAM, and outputs a pulse signal for blinking. Here, when performing white display, the pulse width of the pulse signal for turning on each of the RGB light emitting diodes is shortened, the peak value of the pulse signal is lowered, or no pulse signal is output at all. On the other hand, in order to compensate for this, the pulse signal is applied to the white light emitting diode so that the pulse width of the pulse signal is shortened, the peak value of the pulse signal is low, or the pulse signal is not output at all. Supply. Thereby, the white color of the LED display is displayed.
[0091]
Thus, the brightness of the display can be improved by adding a white light emitting diode to the RGB light emitting diode. In addition, when trying to display white with a combination of RGB, any one or two of RGB colors are emphasized depending on the viewing angle, and it is not possible to express pure white. Such a problem can be solved by adding a white light emitting diode.
[0092]
In the driving circuit in such a display device, it is preferable that a CPU is separately provided as a gradation control circuit for calculating a pulse signal for lighting the white light emitting diode with a desired luminance. The pulse signal output from the gradation control circuit is input to the driver of the white light emitting diode to switch the driver. The white light emitting diode is turned on when the driver is turned on and turned off when the driver is turned off.
[0093]
(traffic light)
When the light-emitting diode of the present invention is used as a signal device which is a kind of display device, it is possible to emit light stably for a long time and color unevenness does not occur even if part of the light-emitting diode is turned off. There is. As a schematic configuration of a traffic light using the light emitting diode of the present invention, white light emitting diodes are arranged in a predetermined arrangement on a base slope on which a conductive pattern is formed.
[0094]
A light emitting diode circuit in which such light emitting diodes are connected in series or in series and parallel is treated as a light emitting diode group. Two or more light emitting diode groups are used, and the light emitting diodes are arranged in a spiral shape. When all the light emitting diodes are arranged, they are arranged in a circular shape on the entire surface. The power cords to be connected to the external power from the light emitting diodes and the substrate are respectively connected by soldering, and then fixed to the railway signal housing. The LED display is arranged in an aluminum die-cast housing with a light-shielding member, and the surface is sealed with a silicone rubber filler. The display surface of the housing is provided with a white lens. Further, the electrical wiring of the LED display is passed through a rubber packing to seal the casing from the back surface of the casing, and the casing is sealed.
[0095]
In this way, a white traffic light can be formed. The light emitting diode of the present invention can be divided into a plurality of groups and arranged in a spiral shape or the like that draws a ring from the center to the outside, and connected in parallel, whereby a more reliable traffic signal can be configured. In this case, a highly reliable traffic signal can be configured by drawing a ring from the center to the outside. Drawing a ring from the center to the outside includes both a continuous drawing and an intermittent arrangement. Therefore, the number of light emitting diodes and the number of light emitting diode groups to be arranged can be variously selected in consideration of the display area of the LED display.
[0096]
With this traffic light, even if one light emitting diode group or some light emitting diodes are extinguished due to some trouble, the other light emitting diode group or the remaining light emitting diodes can uniformly emit light in a circular shape, There is no color shift. Since it is arranged in a spiral shape, the central portion can be arranged densely and can be driven without any sense of incongruity with the light emission signal.
[0097]
【Example】
Hereinafter, examples of the present invention will be described, but it should be noted that the present invention is not limited to the following examples.
[0098]
Example 1
Example 1 is an example in which a light emitting element using a GaInN semiconductor having a light emission peak of 450 nm and a half width of 30 nm is used as the light emitting element. In the light emitting device of Example 1, TMG (trimethylgallium) gas, TMI (trimethylindium) gas, nitrogen gas, and dopant gas are flowed along with a carrier gas on a cleaned sapphire substrate, and a gallium nitride compound semiconductor film is formed by MOCVD. It is produced by doing. SiH as dopant gas during film formationFourAnd Cp2By switching between Mg, a gallium nitride semiconductor having N-type conductivity and a gallium nitride semiconductor having P-type conductivity are formed.
[0099]
The LED element of Example 1 is a contact layer that is a gallium nitride semiconductor having N-type conductivity, a cladding layer that is a gallium aluminum nitride semiconductor having P-type conductivity, and a gallium nitride semiconductor layer having P-type conductivity. An active layer made of non-doped InGaN for forming a single quantum well structure having a contact layer and having a thickness of about 3 nm is formed between the contact layer having N-type conductivity and the cladding layer having P-type conductivity. Has been. Note that a gallium nitride semiconductor layer is formed on the sapphire substrate at a low temperature as a buffer layer. The P-type gallium nitride semiconductor is annealed at a temperature of 400 ° C. or higher after film formation.
[0100]
After exposing the P-type and N-type semiconductor surfaces by etching, the n-side and p-side electrodes are formed by sputtering. After a scribe line was drawn on the semiconductor wafer thus manufactured, an external force was applied to divide the light emitting element.
[0101]
The light-emitting element manufactured as described above is die-bonded to the cup portion of the silver-plated steel mount lead with epoxy resin, and then each electrode of the light-emitting element, the mount lead, and the inner lead are each diameter. Was wire-bonded using a 30 μm gold wire to produce a lead type light emitting diode.
[0102]
On the other hand, the photoluminescent phosphor is a coprecipitation oxidation obtained by coprecipitation of a solution obtained by dissolving rare earth elements of Y, Gd, and Ce in acid at a predetermined stoichiometric ratio with oxalic acid, and firing the precipitate. The mixture is mixed with aluminum oxide, mixed with ammonium fluoride as a flux and packed in a crucible, baked in air at a temperature of 1400 ° C. for 3 hours, and then the baked product is wet using a ball mill. It was prepared by pulverizing, washing, separating and drying, and finally passing through a sieve. As a result, the photoluminescent phosphor is obtained as yttrium aluminum oxide in which Y is substituted by about 20% with Gd (Y0.8Gd0.2)ThreeAlFiveO12: Ce was formed. The substitution of Ce was 0.03.
[0103]
Produced as described above (Y0.8Gd0.2)ThreeAlFiveO12: 80 parts by weight of Ce phosphor and 100 parts by weight of epoxy resin were mixed well to form a slurry, and this slurry was poured into the cup of the mount lead on which the light emitting device was mounted, and then at a temperature of 130 ° C. for 1 hour. And cured. Thus, a coating part containing a photoluminescent phosphor having a thickness of 120 μm was formed on the light emitting element. In Example 1, the coating portion was configured such that a large amount of the photoluminescent phosphor was gradually distributed toward the light emitting element. Irradiation intensity is about 3.5 W / cm2It is. Thereafter, a light-transmitting epoxy resin was formed as a mold member for the purpose of further protecting the light emitting element and the photoluminescent phosphor from external stress, moisture, dust and the like. Here, the mold member is injected into the shell-shaped mold frame by inserting a light emitting element bonded to the lead frame and covered with a coating portion containing a photoluminescent phosphor, and injecting a translucent epoxy resin. And then cured at 150 ° C. for 5 hours to form.
[0104]
When the light emitting diode formed in this way was viewed from the front of light emission observation, the central portion was colored yellowish due to the body color of the photoluminescent phosphor.
As a result of measuring the chromaticity point, the color temperature, and the color rendering index of the light-emitting diode capable of emitting white light, the chromaticity point was (x = 0.302, y = 0.280), color, respectively. The temperature was 8080K and the color rendering index (Ra) = 87.5, showing performance close to that of a three-wavelength fluorescent lamp. Also, the luminous efficiency was 9.51 m / w, comparable to a white light bulb. Furthermore, no change due to the phosphor was observed in each life test of current conduction at 25 ° C., 60 mA, temperature 25 ° C., 20 mA, and
[0105]
(Comparative Example 1)
Photoluminescent phosphor (Y0.8Gd0.2)ThreeAlFiveO12: A light emitting diode was formed and subjected to a life test in the same manner as in Example 1 except that the Ce phosphor was changed to (ZnCd) S: Cu, Al. Immediately after energization, the formed light emitting diode was confirmed to emit white light as in Example 1, but the luminance was low. Moreover, in the life test, the output became zero in about 100 hours. As a result of analyzing the cause of deterioration, the phosphor was blackened.
[0106]
This is thought to be due to the photodissociation caused by the light emitted from the light emitting element and the moisture adhering to the phosphor or moisture entering from the external environment, and colloidal zinc metal was deposited on the phosphor crystal surface, and the appearance turned black. . Life test result of 20 mA energization at a temperature of 25 ° C. and 20 mA energization at a temperature of 60 ° C. and 90% RH together with the result of Example 1FIG.Shown in Luminance shows each relative value on the basis of an initial value.FIG.The solid line represents Example 1 and the dashed line represents Comparative Example 1.
[0107]
(Example 2)
In the light emitting diode of Example 2, the light emission peak of the light emitting element is set to 460 nm by increasing the content of In in the nitride-based compound semiconductor in the light emitting element as compared with that of the light emitting element of Example 1, and the Gd of the photoluminescent phosphor. Is increased from Example 1 (Y0.6Gd0.4)ThreeAlFiveO12: A light emitting diode was produced in the same manner as in Example 1 except that Ce was used.
[0108]
The light-emitting diode manufactured as described above can emit white light, and its chromaticity point, color temperature, and color rendering index were measured. The chromaticity point (x = 0.375, y = 0.370), the color temperature 4400K, and the color rendering index (Ra) = 86.0, respectively.
FIG.(A),FIG.(B) andFIG.(C) shows the emission spectra of the photoluminescent phosphor, the light emitting element and the light emitting diode of Example 2, respectively. In addition, 100 light emitting diodes of Example 2 were manufactured, and the light intensity after the light emission for 1000 hours with respect to the initial light intensity was examined. As a result, when the initial luminous intensity (before the life test) was set to 100%, the average luminous intensity after 1000 hours was 98.8% on average and it was confirmed that there was no difference in characteristics.
[0109]
(Example 3)
The light-emitting diode of Example 3 contains Sm in addition to the rare earth elements Y, Gd, and Ce as a photoluminescent phosphor.0.39Gd0.57Ce0.03Sm0.01)ThreeAlFiveO12It was produced in the same manner as in Example 1 except that the phosphor was used. As a result of producing 100 light emitting diodes of Example 3 and evaluating them at a high temperature of 130 ° C., the average temperature characteristic was about 8% better than that of the light emitting diode of Example 1.
[0110]
Example 4
In the LED display of Example 4, the light-emitting diode of Example 1 isFIG.As shown in FIG. 5, the ceramic base hill on which the copper pattern is formed is arranged in a 16 × 16 matrix. In the LED display of Example 4, the substrate on which the light emitting diodes are arranged is disposed inside the
[0111]
The LED display configured as described above, a RAM that temporarily stores display data to be input, and a gradation signal for taking out the data stored in the RAM and lighting the light emitting diode to a predetermined brightness It was confirmed that it can be used as a black and white LED display device by being driven by a driving means having a gradation control circuit that calculates the above and a driver that is switched by an output signal of the gradation control circuit to light a light emitting diode.
[0112]
[0113]
[0114]
(Example 5)
Example 5Is a general formula Y as a photoluminescent phosphor.ThreeAlFiveO12: Prepared in the same manner as in Example 1 except that the phosphor represented by Ce was used. thisExample 5100 light emitting diodes were prepared and various characteristics were measured.
As a result, white light having a slightly yellowish green color as compared with Example 1 could be emitted.
[0115]
18 (a), 18 (b) and 18 (c).Respectively,Example 5The respective emission spectra of the photoluminescent phosphor, the light emitting element and the light emitting diode are shown. Also,Example 5In the life test, the light emitting diode of No. 1 showed excellent weather resistance as in Example 1.
[0116]
[0117]
[0118]
(Example 6)
The light emitting diode of Example 6 is a planar light emitting device having the configuration shown in FIG.
As a light emitting element, an emission peak is 450 nm.0.05Ga0.95N semiconductor was used. In the light emitting element, TMG (trimethylgallium) gas, TMI (trimethylindium) gas, nitrogen gas and dopant gas are flowed together with a carrier gas on a cleaned sapphire substrate, and a gallium nitride compound semiconductor is formed by MOCVD. Formed by. SiH as dopant gasFourAnd Cp2By switching to Mg, a gallium nitride semiconductor having N-type conductivity and a gallium nitride semiconductor having P-type conductivity were formed to form a PN junction. As a semiconductor light emitting device, a contact layer that is a gallium nitride semiconductor having N-type conductivity, a cladding layer that is a gallium aluminum nitride semiconductor having N-type conductivity, a cladding layer that is a gallium aluminum nitride semiconductor having P-type conductivity, A contact layer which is a gallium nitride semiconductor having P-type conductivity was formed. A Zn-doped InGaN active layer that forms a double heterojunction was formed between the clad layer having N-type conductivity and the clad layer having P-type conductivity. Note that a gallium nitride semiconductor was formed on the sapphire substrate at a low temperature and used as a buffer layer. The P-type nitride semiconductor layer is annealed at a temperature of 400 ° C. or higher after film formation.
[0119]
After each semiconductor layer is formed, the surface of each PN semiconductor is exposed by etching, each electrode is formed by sputtering, and the resulting semiconductor wafer is drawn by a scribe line and then divided by an external force as a light emitting element. A light emitting element was formed.
A light emitting element was die-bonded with an epoxy resin to a mount lead having a cup at the tip of a silver-plated copper lead frame. Each electrode of the light-emitting element, the mount lead, and the inner lead were wire-bonded with a gold wire having a diameter of 30 μm for electrical conduction.
[0120]
The mold member was formed by inserting a lead frame in which a light emitting element was placed into a shell-shaped mold and mixing a light-transmitting epoxy resin, followed by curing at 150 ° C. for 5 hours to form a blue light emitting diode. A blue light emitting diode was connected to one end face of an acrylic light guide plate whose end face was entirely polished. One side and side surfaces of the acrylic plate were screen-printed and cured by dispersing barium titanate as a white reflecting member in an acrylic binder.
[0121]
On the other hand, the photoluminescent phosphor was co-precipitated with oxalic acid in a solution in which rare earth elements of Y, Gd, Ce, and La required for green and red, respectively, were dissolved in acid at a stoichiometric ratio. The co-precipitated oxide obtained by firing this is mixed with aluminum oxide and gallium oxide to obtain mixed raw materials. This was mixed with ammonium fluoride as a flux, packed in a crucible, and fired in air at a temperature range of 1400 ° C. for 3 hours to obtain a fired product. Each fired product was ball milled in water, washed, separated, dried and finally formed through a sieve.
[0122]
The general formula Y produced as described aboveThree(Al0.6Ga0.4)FiveO12: 120 parts by weight of the first phosphor capable of emitting green light represented by Ce and the general formula (Y0.4Gd0.6)ThreeAlFiveO12: 100 parts by weight of the second phosphor capable of emitting red light represented by Ce is mixed well with 100 parts by weight of epoxy resin to form a slurry, and this slurry is formed on the acrylic layer having a thickness of 0.5 mm. The coater was applied uniformly and dried to form a phosphor film as a color conversion member having a thickness of about 30 μm. The phosphor layer was cut into the same size as the main light emitting surface of the light guide plate and placed on the light guide plate to produce a planar light emitting device. As a result of measuring the chromaticity point and the color rendering index of the light-emitting device produced as described above, the chromaticity point is (x = 0.29, y = 0.34), and the color rendering index (Ra) is 92.0, a performance close to that of a three-wavelength fluorescent lamp. Also, the luminous efficiency was 12 lm / w, comparable to a white light bulb. Further, as a weather resistance test, no change due to the phosphor was observed in each test of
[0123]
(Comparative Example 2)
General formula Y of Example 6Three(Al0.6Ga0.4)FiveO12: A first phosphor capable of emitting green light represented by Ce, and a general formula (Y0.4Gd0.6)ThreeAlFiveO12: Instead of the photoluminescent phosphor composed of the second phosphor capable of emitting red light represented by Ce, a green organic fluorescent pigment (FA-001 manufactured by Sinloihi Chemical Co., Ltd.), which is a perylene derivative, respectively. A light emitting diode was produced in the same manner as in Example 6 except that the red organic fluorescent pigment (FA-005 manufactured by Sinloi Chemical Co., Ltd.) was mixed and stirred in the same amount, and the same weather resistance test as in Example 6 was performed. The chromaticity point of the manufactured light emitting diode of Comparative Example 1 was (x = 0.34, y = 0.35). As a weather resistance test, the retention rate and the color tone of the luminance were measured with time by setting the amount of ultraviolet rays with a carbon arc to be approximately equivalent to one year of sunlight at 200 hours.
[0124]
In addition, as a reliability test, the light emitting element was caused to emit light, and the luminance and color tone were measured over time at a constant 70 ° C. The results are shown in FIGS. 13 and 14 together with Example 6. As is apparent from FIGS. 13 and 14, the deterioration of Example 6 is less than that of Comparative Example 2 in both tests.
[0125]
[0126]
[0127]
[0128]
[0129]
(Example 7)
In LED with an emission peak of 470 nm as an LED element0.4Ga0.6N semiconductor was used. In the light emitting device, TMG (trimethyl gallium) gas, TMI (trimethyl indium) gas, nitrogen gas and dopant gas are flowed together with a carrier gas on a cleaned sapphire substrate, and a gallium nitride compound semiconductor is formed by MOCVD. Formed by. SiH as dopant gasFourAnd Cp2By switching to Mg, a gallium nitride semiconductor having N-type conductivity and a gallium nitride semiconductor having P-type conductivity were formed to form a PN junction. As the LED element, a contact layer which is a gallium nitride semiconductor having N-type conductivity, a cladding layer which is a gallium aluminum nitride semiconductor having P-type conductivity, and a contact layer which is a gallium nitride semiconductor having P-type conductivity are formed. . A single well structure was formed by forming an active layer of non-doped InGaN having a thickness of about 3 nm between a contact layer having N-type conductivity and a cladding layer having P-type conductivity. Note that a gallium nitride semiconductor was formed as a buffer layer on the sapphire substrate at a low temperature.
[0130]
After forming each layer as described above, the surface of each PN semiconductor was exposed by etching, and each electrode on the p side and n side was formed by sputtering. The semiconductor wafer thus completed was drawn with a scribe line and then divided by an external force to form a light emitting element as a light emitting element.
This light-emitting element was die-bonded to a cup of a silver-plated copper mount lead using an epoxy resin. Each electrode of the light emitting element, the mount lead, and the inner lead were wire-bonded with a gold wire having a diameter of 30 μm for electrical conduction.
[0131]
The mold member was a blue light emitting diode formed by inserting a lead frame in which a light emitting element was placed in a shell-shaped mold and mixing a light-transmitting epoxy resin, followed by curing at 150 ° C. for 5 hours. A blue light emitting diode was connected to one end face of an acrylic light guide plate whose end face was entirely polished. One side and the side of the acrylic plate were formed into a film by screen printing and curing a white reflective member in which barium titanate was dispersed in an acrylic binder.
[0132]
On the other hand, the photoluminescent phosphor has the general formula (Y0.8Gd0.2)ThreeAlFiveO12: A phosphor represented by Ce and capable of emitting a yellow light of a relatively short wavelength side, and a general formula (Y0.4Gd0.6)ThreeAlFiveO12: A phosphor represented by Ce and capable of emitting a yellow light on the relatively long wavelength side was prepared and mixed as follows. These phosphors were co-precipitated with oxalic acid in which the required rare earth elements of Y, Gd, and Ce were dissolved in acid at a stoichiometric ratio. A co-precipitated oxide obtained by firing this and aluminum oxide are mixed to obtain mixed raw materials. This was mixed with ammonium fluoride as a flux and packed in a crucible and fired in air at a temperature range of 1400 ° C. for 3 hours to obtain a fired product. Each fired product was ball milled in water, washed, separated, dried and finally formed through a sieve.
[0133]
100 parts by weight of the relatively short-wavelength yellow phosphor and 100 parts by weight of the relatively long-wavelength yellow phosphor prepared as described above are mixed well with 1000 parts by weight of an acrylic resin and extruded. A phosphor film having a thickness of about 180 μm used as a color conversion member was formed. The phosphor film was cut into the same size as the main light emitting surface of the light guide plate and placed on the light guide plate to produce a light emitting device. Made in this wayExample 7As a result of measuring the chromaticity point and color rendering index of the light emitting device, the chromaticity point is
(X = 0.33, y = 0.34) and the color rendering index (Ra) = 88.0. The luminous efficiency was 10 lm / w.
[0134]
19 (a), 19 (b) and 19 (c).RespectivelyExample 7The formula (Y0.8Gd0.2)ThreeAlFiveO12: Phosphor represented by Ce, formula (Y0.4Gd0.6)ThreeAlFiveO12: Each emission spectrum of the phosphor represented by Ce and the light emitting element is shown. Also,FIG.IsExample 7The emission spectrum of the light emitting diode is shown. Further, as a weather resistance test, no change due to the phosphor was observed in each test of
[0135]
[0136]
【The invention's effect】
The light-emitting diode according to the present invention can emit light having a desired color, has little deterioration in light emission efficiency and is excellent in weather resistance even when used with high brightness for a long time. Therefore, it is not limited to general electronic devices, but opens up new uses for outdoor display and lighting such as in-vehicle use, aerospace industry, buoy display in harbors, and highway sign lighting that require high reliability. Can do.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a lead type light emitting diode according to an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a chip-type light emitting diode according to an embodiment of the present invention.
3A is a graph showing an excitation spectrum of a garnet-based phosphor activated with cerium according to Embodiment 1, and FIG. 3B is a graph showing an excitation spectrum of the garnet-based phosphor activated with cerium according to Embodiment 1. FIG. It is a graph which shows an emission spectrum.
4 is a graph showing an emission spectrum of the light-emitting diode according to Embodiment 1. FIG.
FIG. 5 is a chromaticity diagram for explaining the light emission color of the light emitting diode of
FIG. 6 is a schematic cross-sectional view of a planar light source according to another embodiment of the present invention.
[Fig. 7]FIG.It is typical sectional drawing of the planar light emission source different from FIG.
[Fig. 8]6 and 7It is typical sectional drawing of the planar light emission source different from FIG.
FIG. 9 is a block diagram of a display device which is an application example of the present invention.
FIG. 10FIG.It is a top view of the LED indicator of the display apparatus of.
FIG. 11 is a plan view of an LED display in which one picture element is configured using the light emitting diode of the present invention and four light emitting diodes of RGB.
12 is a graph showing the results of life tests of the light emitting diodes of Example 1 and Comparative Example 1, wherein (a) shows the results at 25 ° C. and (b) shows the results at 60 ° C. and 90% RH. It is a result.
13 is a graph showing the results of the weather resistance test of Example 6 and Comparative Example 2, wherein (a) shows the luminance retention with respect to elapsed time, and (b) shows the change in color tone before and after the test.
14A and 14B show the results of reliability tests of the light emitting diodes of Example 6 and Comparative Example 2, where FIG. 14A is a graph showing the relationship between luminance retention and time, and FIG. 14B is a graph showing the relationship between color tone and time. is there.
15 is a chromaticity diagram showing a color reproduction range that can be realized by a light emitting diode that combines the phosphor shown in Table 1 and a blue LED having a peak wavelength of 465 nm. FIG.
FIG. 16 is a chromaticity diagram showing changes in emission color when the phosphor content in a light emitting diode combining the phosphor shown in Table 1 and a blue LED having a peak wavelength of 465 nm is changed.
FIG. 17 (a) shows (Y0.6Gd0.4)ThreeAlFiveO12: Is a graph showing the emission spectrum of the photoluminescent phosphor of Example 2 represented by Ce, (b) B is a graph showing the emission spectrum of the light-emitting device of Example 2 having an emission peak wavelength of 460 nm. (C) is a graph which shows the emission spectrum of the light emitting diode of Example 2. FIG.
FIG. 18 (a) is YThreeAlFiveO12: Represented by CeExample 5It is a graph which shows the emission spectrum of photoluminescence fluorescent substance of this, (b) has an emission peak wavelength of 450 nm.Example 5It is a graph which shows the emission spectrum of the light emitting element of (c),Example 5It is a graph which shows the emission spectrum of this light emitting diode.
FIG. 19 (a) shows (Y0.8Gd0.2)ThreeAlFiveO12: Represented by CeExample 7It is a graph which shows the emission spectrum of photoluminescent fluorescent substance of (b), (b) is (Y0.4Gd0.6)ThreeAlFiveO12: Represented by CeExample 7It is a graph which shows the emission spectrum of photoluminescence fluorescent substance of this, (c) has an emission peak wavelength of 470 nm.Example 7It is a graph which shows the emission spectrum of this light emitting element.
FIG. 20Example 7It is a graph which shows the emission spectrum of this light emitting diode.
[Explanation of symbols]
100, 200 ... light emitting diode,
101 ... coating resin,
102, 202, 702 ... Light emitting element (LED chip),
103, 203 ... conductive wire,
104: Mold member,
105 ... Mount lead,
105a ... Cup part,
106: Inner lead,
201, 701 ... coating part,
203 ... conductive wire,
204, 504 ...
205 ... terminal metal,
501 ... Light emitting diode,
505: a light shielding member,
506 ... silicone rubber,
601 ... LED indicator,
602 ... Driver circuit,
603 ... Image data storage means (RAM),
604 ... gradation control means,
610 ... Drive circuit,
703 ... Metal substrate,
704 ... Light guide plate,
705, 707 ... reflective member,
706: scattering sheet.
Claims (17)
Translated fromJapanese前記ＬＥＤチップの近傍に配置された透光性樹脂と、 A translucent resin disposed in the vicinity of the LED chip;
前記透光性樹脂に含有されるフォトルミネッセンスの蛍光体であって、前記ＬＥＤチップの青色発光を一部吸収して、５３０〜５７０ｎｍにピークを有し、少なくとも７００ｎｍまで裾をひく発光スペクトルを発光可能であり、ガーネット構造をとると共にセリウムを含有するフォトルミネッセンスの蛍光体と、を具え、 A photoluminescent phosphor contained in the translucent resin, which partially absorbs the blue light emission of the LED chip, emits an emission spectrum having a peak at 530 to 570 nm and a tail at least to 700 nm. A luminescent phosphor capable of having a garnet structure and containing cerium,
前記ＬＥＤチップから出て前記フォトルミネッセンスの蛍光体に吸収されずに通過した光の発光スペクトルと、前記フォトルミネッセンスの蛍光体から出た光の発光スペクトルとが互いに重なり合い、両発光スペクトルの混合により白色系の光を発光可能なことを特徴とする発光ダイオード。 The emission spectrum of the light that has passed through the LED chip without being absorbed by the photoluminescent phosphor and the emission spectrum of the light emitted from the photoluminescence phosphor overlap each other, and a white color is obtained by mixing both emission spectra. A light-emitting diode capable of emitting light of a system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33129399AJP3700502B2 (en) | 1996-07-29 | 1999-11-22 | Light emitting diode |
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19858596 | 1996-07-29 | ||
| JP8-198585 | 1996-07-29 | ||
| JP24433996 | 1996-09-17 | ||
| JP8-244339 | 1996-09-17 | ||
| JP24538196 | 1996-09-18 | ||
| JP8-245381 | 1996-09-18 | ||
| JP35900496 | 1996-12-27 | ||
| JP8-359004 | 1996-12-27 | ||
| JP9-81010 | 1997-03-31 | ||
| JP8101097 | 1997-03-31 | ||
| JP33129399AJP3700502B2 (en) | 1996-07-29 | 1999-11-22 | Light emitting diode |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50869398ADivisionJP3503139B2 (en) | 1996-07-29 | 1997-07-29 | Light emitting device and display device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001330406ADivisionJP2002198573A (en) | 1996-07-29 | 2001-10-29 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2000208815A JP2000208815A (en) | 2000-07-28 |
| JP3700502B2true JP3700502B2 (en) | 2005-09-28 |
Family
ID=27524906
Family Applications (19)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50869398AExpired - LifetimeJP3503139B2 (en) | 1996-07-29 | 1997-07-29 | Light emitting device and display device |
| JP33129399AExpired - LifetimeJP3700502B2 (en) | 1996-07-29 | 1999-11-22 | Light emitting diode |
| JP2001330406APendingJP2002198573A (en) | 1996-07-29 | 2001-10-29 | Light emitting diode |
| JP2002278066AExpired - LifetimeJP3729166B2 (en) | 1996-07-29 | 2002-09-24 | Light emitting device |
| JP2005147093APendingJP2005317985A (en) | 1996-07-29 | 2005-05-19 | Light emitting device and display device |
| JP2006196344AExpired - LifetimeJP4124248B2 (en) | 1996-07-29 | 2006-07-19 | Light emitting device |
| JP2008000269AExpired - LifetimeJP5214253B2 (en) | 1996-07-29 | 2008-01-07 | Light emitting device and display device |
| JP2009065948AExpired - LifetimeJP4530094B2 (en) | 1996-07-29 | 2009-03-18 | Light emitting diode |
| JP2010231162AExpired - LifetimeJP5177199B2 (en) | 1996-07-29 | 2010-10-14 | Light emitting device and display device |
| JP2012189084AExpired - LifetimeJP5177317B2 (en) | 1996-07-29 | 2012-08-29 | Light emitting device and display device |
| JP2013004210AExpired - LifetimeJP5725045B2 (en) | 1996-07-29 | 2013-01-15 | Light emitting device and display device |
| JP2013265770AExpired - LifetimeJP5610056B2 (en) | 1996-07-29 | 2013-12-24 | Light emitting device and display device |
| JP2014132379AWithdrawnJP2014212336A (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2014132374AExpired - LifetimeJP5692445B2 (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2014132376AExpired - LifetimeJP5821154B2 (en) | 1996-07-29 | 2014-06-27 | Backlight |
| JP2014132371AExpired - LifetimeJP5664815B2 (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2015239461AExpired - LifetimeJP5953514B2 (en) | 1996-07-29 | 2015-12-08 | Light emitting device and display device |
| JP2016063289AExpired - LifetimeJP6101943B2 (en) | 1996-07-29 | 2016-03-28 | Light emitting device and display device |
| JP2016089711AWithdrawnJP2016178320A (en) | 1996-07-29 | 2016-04-27 | Light-emitting device and display device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50869398AExpired - LifetimeJP3503139B2 (en) | 1996-07-29 | 1997-07-29 | Light emitting device and display device |
Family Applications After (17)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001330406APendingJP2002198573A (en) | 1996-07-29 | 2001-10-29 | Light emitting diode |
| JP2002278066AExpired - LifetimeJP3729166B2 (en) | 1996-07-29 | 2002-09-24 | Light emitting device |
| JP2005147093APendingJP2005317985A (en) | 1996-07-29 | 2005-05-19 | Light emitting device and display device |
| JP2006196344AExpired - LifetimeJP4124248B2 (en) | 1996-07-29 | 2006-07-19 | Light emitting device |
| JP2008000269AExpired - LifetimeJP5214253B2 (en) | 1996-07-29 | 2008-01-07 | Light emitting device and display device |
| JP2009065948AExpired - LifetimeJP4530094B2 (en) | 1996-07-29 | 2009-03-18 | Light emitting diode |
| JP2010231162AExpired - LifetimeJP5177199B2 (en) | 1996-07-29 | 2010-10-14 | Light emitting device and display device |
| JP2012189084AExpired - LifetimeJP5177317B2 (en) | 1996-07-29 | 2012-08-29 | Light emitting device and display device |
| JP2013004210AExpired - LifetimeJP5725045B2 (en) | 1996-07-29 | 2013-01-15 | Light emitting device and display device |
| JP2013265770AExpired - LifetimeJP5610056B2 (en) | 1996-07-29 | 2013-12-24 | Light emitting device and display device |
| JP2014132379AWithdrawnJP2014212336A (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2014132374AExpired - LifetimeJP5692445B2 (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2014132376AExpired - LifetimeJP5821154B2 (en) | 1996-07-29 | 2014-06-27 | Backlight |
| JP2014132371AExpired - LifetimeJP5664815B2 (en) | 1996-07-29 | 2014-06-27 | Light emitting device and display device |
| JP2015239461AExpired - LifetimeJP5953514B2 (en) | 1996-07-29 | 2015-12-08 | Light emitting device and display device |
| JP2016063289AExpired - LifetimeJP6101943B2 (en) | 1996-07-29 | 2016-03-28 | Light emitting device and display device |
| JP2016089711AWithdrawnJP2016178320A (en) | 1996-07-29 | 2016-04-27 | Light-emitting device and display device |
Country Status (19)
| Country | Link |
|---|---|
| US (25) | US5998925A (en) |
| EP (14) | EP2276080B2 (en) |
| JP (19) | JP3503139B2 (en) |
| KR (7) | KR100517271B1 (en) |
| CN (11) | CN100424902C (en) |
| AT (1) | ATE195831T1 (en) |
| AU (1) | AU720234B2 (en) |
| BR (7) | BR9715362B1 (en) |
| CA (4) | CA2481364C (en) |
| DE (6) | DE69702929T4 (en) |
| DK (9) | DK2276080T3 (en) |
| ES (9) | ES2544690T3 (en) |
| GR (1) | GR3034493T3 (en) |
| HK (1) | HK1052409B (en) |
| MY (1) | MY125748A (en) |
| PT (5) | PT936682E (en) |
| SG (5) | SG10201502321UA (en) |
| TW (2) | TW383508B (en) |
| WO (1) | WO1998005078A1 (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009041237A1 (en) | 2007-09-27 | 2009-04-02 | Showa Denko K.K. | Iii nitride semiconductor light emitting element |
| US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| EP2395065A1 (en) | 2010-06-09 | 2011-12-14 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, light-emitting diode, and illuminating device and liquid crystal panel backlight device using them |
| WO2012073887A1 (en) | 2010-11-30 | 2012-06-07 | パナソニック株式会社 | Phosphor and light emitting device |
| EP2474589A2 (en) | 2011-01-06 | 2012-07-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, making method, and light-emitting diode |
| EP2474590A2 (en) | 2011-01-06 | 2012-07-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles and making method |
| WO2013046856A1 (en) | 2011-09-28 | 2013-04-04 | 富士フイルム株式会社 | Method for producing lithographic printing plate |
| EP2607448A1 (en) | 2011-12-22 | 2013-06-26 | Shin-Etsu Chemical Co., Ltd. | Yttrium-Cerium-Aluminum garnet phosphor and light-emitting device |
| EP2607449A1 (en) | 2011-12-22 | 2013-06-26 | Shin-Etsu Chemical Co., Ltd. | Preparation of yttrium-cerium-aluminum garnet phosphor |
| EP2690154A1 (en) | 2012-07-24 | 2014-01-29 | Shin-Etsu Chemical Co., Ltd. | Method for preparing phosphor precursor and phosphor, and wavelength converter |
| KR20160005769A (en) | 2013-05-21 | 2016-01-15 | 샌트랄 글래스 컴퍼니 리미티드 | Broadband emission material and white light emission material |
| WO2017200097A1 (en) | 2016-05-20 | 2017-11-23 | 株式会社 東芝 | White light source |
Families Citing this family (1476)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3404064B2 (en)* | 1993-03-09 | 2003-05-06 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| US6013199A (en) | 1997-03-04 | 2000-01-11 | Symyx Technologies | Phosphor materials |
| US6153971A (en)* | 1995-09-21 | 2000-11-28 | Matsushita Electric Industrial Co., Ltd. | Light source with only two major light emitting bands |
| US6041345A (en)* | 1996-03-08 | 2000-03-21 | Microsoft Corporation | Active stream format for holding multiple media streams |
| US6600175B1 (en) | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
| US20040239243A1 (en)* | 1996-06-13 | 2004-12-02 | Roberts John K. | Light emitting assembly |
| KR100537349B1 (en) | 1996-06-26 | 2006-02-28 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | Light-emitting semiconductor component with luminescence conversion element |
| DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| JP3190259B2 (en) | 1996-07-12 | 2001-07-23 | 株式会社クボタ | Plug valve |
| TW383508B (en)* | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| US6613247B1 (en)* | 1996-09-20 | 2003-09-02 | Osram Opto Semiconductors Gmbh | Wavelength-converting casting composition and white light-emitting semiconductor component |
| DE19655185B9 (en)* | 1996-09-20 | 2012-03-01 | Osram Gesellschaft mit beschränkter Haftung | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| DE19655445B3 (en)* | 1996-09-20 | 2016-09-22 | Osram Gmbh | White light-emitting semiconductor component with luminescence conversion layer and use of such semiconductor components |
| JP3434658B2 (en) | 1997-01-14 | 2003-08-11 | サンケン電気株式会社 | Semiconductor light emitting device |
| JP3378465B2 (en) | 1997-05-16 | 2003-02-17 | 株式会社東芝 | Light emitting device |
| US6319425B1 (en)* | 1997-07-07 | 2001-11-20 | Asahi Rubber Inc. | Transparent coating member for light-emitting diodes and a fluorescent color light source |
| US6623670B2 (en) | 1997-07-07 | 2003-09-23 | Asahi Rubber Inc. | Method of molding a transparent coating member for light-emitting diodes |
| US5847507A (en)* | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
| CN1142598C (en) | 1997-07-25 | 2004-03-17 | 日亚化学工业株式会社 | Nitride semiconductor light emitting device |
| US20030133292A1 (en) | 1999-11-18 | 2003-07-17 | Mueller George G. | Methods and apparatus for generating and modulating white light illumination conditions |
| US7014336B1 (en) | 1999-11-18 | 2006-03-21 | Color Kinetics Incorporated | Systems and methods for generating and modulating illumination conditions |
| US6806659B1 (en) | 1997-08-26 | 2004-10-19 | Color Kinetics, Incorporated | Multicolored LED lighting method and apparatus |
| US7038398B1 (en) | 1997-08-26 | 2006-05-02 | Color Kinetics, Incorporated | Kinetic illumination system and methods |
| US7161313B2 (en)* | 1997-08-26 | 2007-01-09 | Color Kinetics Incorporated | Light emitting diode based products |
| US6340824B1 (en)* | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| JPH11135838A (en)* | 1997-10-20 | 1999-05-21 | Ind Technol Res Inst | White light emitting diode and method of manufacturing the same |
| US7598686B2 (en) | 1997-12-17 | 2009-10-06 | Philips Solid-State Lighting Solutions, Inc. | Organic light emitting diode methods and apparatus |
| EP1043383B2 (en)* | 1997-12-24 | 2007-05-30 | Hitachi Medical Corporation | Phosphors, and radiation detectors and x-ray ct unit made by using the same |
| US6294800B1 (en) | 1998-02-06 | 2001-09-25 | General Electric Company | Phosphors for white light generation from UV emitting diodes |
| US6469322B1 (en) | 1998-02-06 | 2002-10-22 | General Electric Company | Green emitting phosphor for use in UV light emitting diodes |
| US6252254B1 (en) | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
| JP3900144B2 (en)* | 1998-02-17 | 2007-04-04 | 日亜化学工業株式会社 | Method for forming light emitting diode |
| JP3541709B2 (en)* | 1998-02-17 | 2004-07-14 | 日亜化学工業株式会社 | Method of forming light emitting diode |
| FR2775250B1 (en)* | 1998-02-24 | 2000-05-05 | Wilco International Sarl | AIRCRAFT LIGHTING MEDIA COMPATIBLE WITH A NIGHT VISION SYSTEM |
| US20080042554A1 (en)* | 1998-05-18 | 2008-02-21 | Kabushiki Kaisha Toshiba | Image display device and light emission device |
| JP3645422B2 (en)* | 1998-07-14 | 2005-05-11 | 東芝電子エンジニアリング株式会社 | Light emitting device |
| JP2000081848A (en)* | 1998-09-03 | 2000-03-21 | Semiconductor Energy Lab Co Ltd | Electronic equipment mounting liquid crystal display device |
| US6335548B1 (en)* | 1999-03-15 | 2002-01-01 | Gentex Corporation | Semiconductor radiation emitter package |
| KR100702273B1 (en)† | 1998-09-28 | 2007-03-30 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | Lighting system |
| US6366018B1 (en)* | 1998-10-21 | 2002-04-02 | Sarnoff Corporation | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| US6404125B1 (en)* | 1998-10-21 | 2002-06-11 | Sarnoff Corporation | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
| US6299338B1 (en) | 1998-11-30 | 2001-10-09 | General Electric Company | Decorative lighting apparatus with light source and luminescent material |
| US6429583B1 (en) | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
| JP2000208822A (en)* | 1999-01-11 | 2000-07-28 | Matsushita Electronics Industry Corp | Semiconductor light emitting device |
| DE19902750A1 (en)* | 1999-01-25 | 2000-08-03 | Osram Opto Semiconductors Gmbh | Semiconductor component for generating mixed-colored electromagnetic radiation |
| JP4296644B2 (en)* | 1999-01-29 | 2009-07-15 | 豊田合成株式会社 | Light emitting diode |
| JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
| US6351069B1 (en)* | 1999-02-18 | 2002-02-26 | Lumileds Lighting, U.S., Llc | Red-deficiency-compensating phosphor LED |
| US6680569B2 (en) | 1999-02-18 | 2004-01-20 | Lumileds Lighting U.S. Llc | Red-deficiency compensating phosphor light emitting device |
| US6140669A (en) | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
| ATE452445T1 (en) | 1999-03-04 | 2010-01-15 | Nichia Corp | NITRIDE SEMICONDUCTOR LASER ELEMENT |
| JP3937644B2 (en)* | 1999-03-25 | 2007-06-27 | セイコーエプソン株式会社 | Light source, lighting device, and liquid crystal device using the lighting device |
| KR100425566B1 (en) | 1999-06-23 | 2004-04-01 | 가부시키가이샤 시티즌 덴시 | Light emitting diode |
| WO2001008452A1 (en) | 1999-07-23 | 2001-02-01 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Luminous substance for a light source and light source associated therewith |
| EP1116419B1 (en)* | 1999-07-23 | 2004-10-06 | Osram Opto Semiconductors GmbH | Luminescent array, wavelength-converting sealing material and light source |
| JP2001144331A (en) | 1999-09-02 | 2001-05-25 | Toyoda Gosei Co Ltd | Light emitting device |
| US6515421B2 (en)* | 1999-09-02 | 2003-02-04 | General Electric Company | Control of leachable mercury in fluorescent lamps |
| US6696703B2 (en) | 1999-09-27 | 2004-02-24 | Lumileds Lighting U.S., Llc | Thin film phosphor-converted light emitting diode device |
| US6686691B1 (en)* | 1999-09-27 | 2004-02-03 | Lumileds Lighting, U.S., Llc | Tri-color, white light LED lamps |
| KR100683364B1 (en) | 1999-09-27 | 2007-02-15 | 필립스 루미리즈 라이팅 캄파니 엘엘씨 | Light Emitting Diodes Generate White Light by Complete Fluorescence Conversion |
| US6630691B1 (en)* | 1999-09-27 | 2003-10-07 | Lumileds Lighting U.S., Llc | Light emitting diode device comprising a luminescent substrate that performs phosphor conversion |
| US6299498B1 (en)* | 1999-10-27 | 2001-10-09 | Shin Lung Liu | White-light emitting diode structure and manufacturing method |
| JP4197814B2 (en)* | 1999-11-12 | 2008-12-17 | シャープ株式会社 | LED driving method, LED device and display device |
| EP1610593B2 (en) | 1999-11-18 | 2020-02-19 | Signify North America Corporation | Generation of white light with Light Emitting Diodes having different spectrum |
| US20020176259A1 (en) | 1999-11-18 | 2002-11-28 | Ducharme Alfred D. | Systems and methods for converting illumination |
| JP2003517705A (en)† | 1999-11-18 | 2003-05-27 | カラー・キネティックス・インコーポレーテッド | System and method for generating and adjusting lighting conditions |
| TW500962B (en)* | 1999-11-26 | 2002-09-01 | Sanyo Electric Co | Surface light source and method for adjusting its hue |
| US6357889B1 (en) | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
| US6513949B1 (en)* | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
| US6350041B1 (en)* | 1999-12-03 | 2002-02-26 | Cree Lighting Company | High output radial dispersing lamp using a solid state light source |
| US6666567B1 (en) | 1999-12-28 | 2003-12-23 | Honeywell International Inc. | Methods and apparatus for a light source with a raised LED structure |
| JP2001177145A (en) | 1999-12-21 | 2001-06-29 | Toshiba Electronic Engineering Corp | Semiconductor light emitting device and method of manufacturing the same |
| US6566808B1 (en) | 1999-12-22 | 2003-05-20 | General Electric Company | Luminescent display and method of making |
| US7576496B2 (en)* | 1999-12-22 | 2009-08-18 | General Electric Company | AC powered OLED device |
| TW480879B (en)* | 2000-01-06 | 2002-03-21 | Dynascan Technology Corp | Method to compensate for the color no uniformity of color display |
| KR20010080796A (en)* | 2000-01-07 | 2001-08-25 | 허영덕 | Fluorescence Material for the use of white color emitting and preparation thereof and the white color emitting method therefor |
| US6700322B1 (en)* | 2000-01-27 | 2004-03-02 | General Electric Company | Light source with organic layer and photoluminescent layer |
| US7049761B2 (en) | 2000-02-11 | 2006-05-23 | Altair Engineering, Inc. | Light tube and power supply circuit |
| US6522065B1 (en)* | 2000-03-27 | 2003-02-18 | General Electric Company | Single phosphor for creating white light with high luminosity and high CRI in a UV led device |
| US6409938B1 (en) | 2000-03-27 | 2002-06-25 | The General Electric Company | Aluminum fluoride flux synthesis method for producing cerium doped YAG |
| US6538371B1 (en) | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
| WO2001075359A1 (en)* | 2000-04-03 | 2001-10-11 | Getinge/Castle, Inc. | High power led source and optical delivery system |
| US6653765B1 (en) | 2000-04-17 | 2003-11-25 | General Electric Company | Uniform angular light distribution from LEDs |
| US6603258B1 (en)* | 2000-04-24 | 2003-08-05 | Lumileds Lighting, U.S. Llc | Light emitting diode device that emits white light |
| DE10020465A1 (en)* | 2000-04-26 | 2001-11-08 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component with luminescence conversion element |
| JP4521929B2 (en)* | 2000-04-26 | 2010-08-11 | 株式会社日立メディコ | Phosphor and radiation detector and X-ray CT apparatus using the same |
| US7304325B2 (en)* | 2000-05-01 | 2007-12-04 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor light-emitting device |
| US6604971B1 (en) | 2000-05-02 | 2003-08-12 | General Electric Company | Fabrication of LED lamps by controlled deposition of a suspension media |
| US6466135B1 (en) | 2000-05-15 | 2002-10-15 | General Electric Company | Phosphors for down converting ultraviolet light of LEDs to blue-green light |
| US6555958B1 (en) | 2000-05-15 | 2003-04-29 | General Electric Company | Phosphor for down converting ultraviolet light of LEDs to blue-green light |
| US6501100B1 (en)* | 2000-05-15 | 2002-12-31 | General Electric Company | White light emitting phosphor blend for LED devices |
| US6621211B1 (en)* | 2000-05-15 | 2003-09-16 | General Electric Company | White light emitting phosphor blends for LED devices |
| JP2001332765A (en)* | 2000-05-22 | 2001-11-30 | Iwasaki Electric Co Ltd | LED indicator light |
| DE50113755D1 (en) | 2000-05-29 | 2008-04-30 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | WHITE-EMITTING LIGHTING UNIT ON LED BASE |
| DE10026435A1 (en)* | 2000-05-29 | 2002-04-18 | Osram Opto Semiconductors Gmbh | Calcium-magnesium-chlorosilicate phosphor and its application in luminescence conversion LEDs |
| US6577073B2 (en) | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
| JP4386693B2 (en)* | 2000-05-31 | 2009-12-16 | パナソニック株式会社 | LED lamp and lamp unit |
| JP2002057376A (en)* | 2000-05-31 | 2002-02-22 | Matsushita Electric Ind Co Ltd | LED lamp |
| US7320632B2 (en)* | 2000-06-15 | 2008-01-22 | Lednium Pty Limited | Method of producing a lamp |
| AUPQ818100A0 (en) | 2000-06-15 | 2000-07-06 | Arlec Australia Limited | Led lamp |
| JP2002190622A (en)* | 2000-12-22 | 2002-07-05 | Sanken Electric Co Ltd | Transparent fluorescent cover for light emitting diode |
| JP4926337B2 (en)* | 2000-06-28 | 2012-05-09 | アバゴ・テクノロジーズ・ジェネラル・アイピー（シンガポール）プライベート・リミテッド | light source |
| US6883926B2 (en) | 2000-07-25 | 2005-04-26 | General Electric Company | Light emitting semi-conductor device apparatus for display illumination |
| DE10036940A1 (en) | 2000-07-28 | 2002-02-07 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Luminescence conversion LED |
| JP2002050797A (en) | 2000-07-31 | 2002-02-15 | Toshiba Corp | Semiconductor-excited phosphor light emitting device and method of manufacturing the same |
| US6747406B1 (en)* | 2000-08-07 | 2004-06-08 | General Electric Company | LED cross-linkable phospor coating |
| DE10041328B4 (en)* | 2000-08-23 | 2018-04-05 | Osram Opto Semiconductors Gmbh | Packaging unit for semiconductor chips |
| JP2002076434A (en)* | 2000-08-28 | 2002-03-15 | Toyoda Gosei Co Ltd | Light emitting device |
| KR100406856B1 (en)* | 2000-08-30 | 2003-11-21 | 가부시키가이샤 시티즌 덴시 | Led mounted on surface and method for manufacturing the same |
| US6614103B1 (en)* | 2000-09-01 | 2003-09-02 | General Electric Company | Plastic packaging of LED arrays |
| JP2002084002A (en)* | 2000-09-06 | 2002-03-22 | Nippon Leiz Co Ltd | Light source device |
| US6255129B1 (en)* | 2000-09-07 | 2001-07-03 | Highlink Technology Corporation | Light-emitting diode device and method of manufacturing the same |
| US6525464B1 (en)* | 2000-09-08 | 2003-02-25 | Unity Opto Technology Co., Ltd. | Stacked light-mixing LED |
| JP2002141556A (en) | 2000-09-12 | 2002-05-17 | Lumileds Lighting Us Llc | Light-emitting diode with improved light extraction effect |
| US6635987B1 (en)* | 2000-09-26 | 2003-10-21 | General Electric Company | High power white LED lamp structure using unique phosphor application for LED lighting products |
| US7378982B2 (en)* | 2000-09-28 | 2008-05-27 | Abdulahi Mohamed | Electronic display with multiple pre-programmed messages |
| JP2002111072A (en)* | 2000-09-29 | 2002-04-12 | Toyoda Gosei Co Ltd | Light emitting device |
| JP3609709B2 (en)* | 2000-09-29 | 2005-01-12 | 株式会社シチズン電子 | Light emitting diode |
| US6998281B2 (en)* | 2000-10-12 | 2006-02-14 | General Electric Company | Solid state lighting device with reduced form factor including LED with directional emission and package with microoptics |
| US6650044B1 (en)* | 2000-10-13 | 2003-11-18 | Lumileds Lighting U.S., Llc | Stenciling phosphor layers on light emitting diodes |
| JP2002133925A (en)* | 2000-10-25 | 2002-05-10 | Sanken Electric Co Ltd | Fluorescent cover and semiconductor light emitting device |
| US6476549B2 (en)* | 2000-10-26 | 2002-11-05 | Mu-Chin Yu | Light emitting diode with improved heat dissipation |
| JP2002141559A (en)* | 2000-10-31 | 2002-05-17 | Sanken Electric Co Ltd | Light emitting semiconductor chip assembly and light emitting semiconductor lead frame |
| FI109632B (en) | 2000-11-06 | 2002-09-13 | Nokia Corp | White lighting |
| US6365922B1 (en)* | 2000-11-16 | 2002-04-02 | Harvatek Corp. | Focusing cup for surface mount optoelectronic diode package |
| US6518600B1 (en) | 2000-11-17 | 2003-02-11 | General Electric Company | Dual encapsulation for an LED |
| JP4683719B2 (en)* | 2000-12-21 | 2011-05-18 | 株式会社日立メディコ | Oxide phosphor, radiation detector using the same, and X-ray CT apparatus |
| KR100367854B1 (en)* | 2000-12-28 | 2003-01-10 | 대주정밀화학 주식회사 | YAG yellow phosphor comprising thulium for white LED and manufacturing method thereof |
| AT410266B (en) | 2000-12-28 | 2003-03-25 | Tridonic Optoelectronics Gmbh | LIGHT SOURCE WITH A LIGHT-EMITTING ELEMENT |
| US20020084745A1 (en)* | 2000-12-29 | 2002-07-04 | Airma Optoelectronics Corporation | Light emitting diode with light conversion by dielectric phosphor powder |
| JP3819713B2 (en)* | 2001-01-09 | 2006-09-13 | 日本碍子株式会社 | Semiconductor light emitting device |
| JP2002280607A (en)* | 2001-01-10 | 2002-09-27 | Toyoda Gosei Co Ltd | Light emitting device |
| US6703780B2 (en)* | 2001-01-16 | 2004-03-09 | General Electric Company | Organic electroluminescent device with a ceramic output coupler and method of making the same |
| US6930737B2 (en)* | 2001-01-16 | 2005-08-16 | Visteon Global Technologies, Inc. | LED backlighting system |
| JP2002217459A (en)* | 2001-01-16 | 2002-08-02 | Stanley Electric Co Ltd | Light emitting diode and backlight device for liquid crystal display using light emitting diode as light source |
| MY145695A (en) | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
| EP1244152A3 (en)* | 2001-01-26 | 2008-12-03 | Toyoda Gosei Co., Ltd. | Reflective light emitting diode, reflective optical device and its manufacturing method |
| JP2002232013A (en)* | 2001-02-02 | 2002-08-16 | Rohm Co Ltd | Semiconductor light emitting device |
| DE10105800B4 (en)* | 2001-02-07 | 2017-08-31 | Osram Gmbh | Highly efficient phosphor and its use |
| JP4724924B2 (en)* | 2001-02-08 | 2011-07-13 | ソニー株式会社 | Manufacturing method of display device |
| US6541800B2 (en) | 2001-02-22 | 2003-04-01 | Weldon Technologies, Inc. | High power LED |
| JP4116260B2 (en) | 2001-02-23 | 2008-07-09 | 株式会社東芝 | Semiconductor light emitting device |
| JP2002270899A (en)* | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Lighting Corp | Color temperature variable led light source module |
| US6611000B2 (en) | 2001-03-14 | 2003-08-26 | Matsushita Electric Industrial Co., Ltd. | Lighting device |
| US6630786B2 (en)* | 2001-03-30 | 2003-10-07 | Candescent Technologies Corporation | Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance |
| US6844903B2 (en)* | 2001-04-04 | 2005-01-18 | Lumileds Lighting U.S., Llc | Blue backlight and phosphor layer for a color LCD |
| JP2002314143A (en)* | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
| JP4101468B2 (en)* | 2001-04-09 | 2008-06-18 | 豊田合成株式会社 | Method for manufacturing light emitting device |
| JP2002314138A (en) | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
| JP2004526290A (en)* | 2001-04-10 | 2004-08-26 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Lighting systems and display devices |
| JP2002309247A (en)* | 2001-04-16 | 2002-10-23 | Nichia Chem Ind Ltd | Gallium nitride phosphor and manufacturing method thereof |
| JP4048954B2 (en)* | 2001-04-20 | 2008-02-20 | 日亜化学工業株式会社 | Light emitting device |
| US6685852B2 (en) | 2001-04-27 | 2004-02-03 | General Electric Company | Phosphor blends for generating white light from near-UV/blue light-emitting devices |
| US6686676B2 (en) | 2001-04-30 | 2004-02-03 | General Electric Company | UV reflectors and UV-based light sources having reduced UV radiation leakage incorporating the same |
| US6658373B2 (en)* | 2001-05-11 | 2003-12-02 | Field Diagnostic Services, Inc. | Apparatus and method for detecting faults and providing diagnostics in vapor compression cycle equipment |
| US6616862B2 (en)* | 2001-05-21 | 2003-09-09 | General Electric Company | Yellow light-emitting halophosphate phosphors and light sources incorporating the same |
| KR100419611B1 (en) | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
| US6596195B2 (en) | 2001-06-01 | 2003-07-22 | General Electric Company | Broad-spectrum terbium-containing garnet phosphors and white-light sources incorporating the same |
| US7012588B2 (en)* | 2001-06-05 | 2006-03-14 | Eastman Kodak Company | Method for saving power in an organic electroluminescent display using white light emitting elements |
| US6642652B2 (en) | 2001-06-11 | 2003-11-04 | Lumileds Lighting U.S., Llc | Phosphor-converted light emitting device |
| JP4114331B2 (en)* | 2001-06-15 | 2008-07-09 | 豊田合成株式会社 | Light emitting device |
| US6798136B2 (en)* | 2001-06-19 | 2004-09-28 | Gelcore Llc | Phosphor embedded die epoxy and lead frame modifications |
| US6758587B2 (en) | 2001-06-25 | 2004-07-06 | Grote Industries, Inc. | Light emitting diode license lamp with reflector |
| TWI287569B (en)* | 2001-06-27 | 2007-10-01 | Nantex Industry Co Ltd | Yttrium aluminium garnet fluorescent powder comprising at least two optical active center, its preparation and uses |
| DE10133352A1 (en)* | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lighting unit with at least one LED as a light source |
| JP2003027057A (en)* | 2001-07-17 | 2003-01-29 | Hitachi Ltd | Light source and image display device using the same |
| JP2003031856A (en)* | 2001-07-18 | 2003-01-31 | Okaya Electric Ind Co Ltd | Light emitting device and its manufacturing method |
| US20030015708A1 (en) | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| JP4055503B2 (en)* | 2001-07-24 | 2008-03-05 | 日亜化学工業株式会社 | Semiconductor light emitting device |
| TW552726B (en) | 2001-07-26 | 2003-09-11 | Matsushita Electric Works Ltd | Light emitting device in use of LED |
| EP2017901A1 (en) | 2001-09-03 | 2009-01-21 | Panasonic Corporation | Semiconductor light emitting device, light emitting apparatus and production method for semiconductor light emitting DEV |
| US6791283B2 (en)* | 2001-09-07 | 2004-09-14 | Opalec | Dual mode regulated light-emitting diode module for flashlights |
| DE10146719A1 (en)* | 2001-09-20 | 2003-04-17 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lighting unit with at least one LED as a light source |
| DE10147040A1 (en)* | 2001-09-25 | 2003-04-24 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Lighting unit with at least one LED as a light source |
| DE20115914U1 (en)* | 2001-09-27 | 2003-02-13 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH, 81543 München | Lighting unit with at least one LED as a light source |
| KR100894372B1 (en)* | 2001-10-01 | 2009-04-22 | 파나소닉 주식회사 | Semiconductor light emitting device and light emitting device using same |
| KR100624403B1 (en)* | 2001-10-06 | 2006-09-15 | 삼성전자주식회사 | Nervous system based emotion synthesis apparatus and method in human body |
| JP2003124521A (en)* | 2001-10-09 | 2003-04-25 | Rohm Co Ltd | Semiconductor light emitting device with case |
| JP3948650B2 (en) | 2001-10-09 | 2007-07-25 | アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド | Light emitting diode and manufacturing method thereof |
| US7011421B2 (en)* | 2001-10-18 | 2006-03-14 | Ilight Technologies, Inc. | Illumination device for simulating neon lighting through use of fluorescent dyes |
| DE10153259A1 (en)* | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| JP2003147351A (en)* | 2001-11-09 | 2003-05-21 | Taiwan Lite On Electronics Inc | How to make a white light source |
| DE10241989A1 (en)* | 2001-11-30 | 2003-06-18 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
| US20030117794A1 (en)* | 2001-12-20 | 2003-06-26 | Tien-Rong Lu | Flat color-shift medium |
| TW518773B (en)* | 2001-12-31 | 2003-01-21 | Solidlite Corp | Manufacturing method of white LED |
| KR20030060281A (en)* | 2002-01-08 | 2003-07-16 | 주식회사 이츠웰 | Light emitting device and display using the device |
| KR100497339B1 (en)* | 2002-01-08 | 2005-06-23 | 주식회사 이츠웰 | Light emitting diode device and illuminator, display, and back light using the same |
| US6836502B2 (en)* | 2002-01-17 | 2004-12-28 | Hutchinson Technology Incorporated | Spectroscopy light source |
| JP3973082B2 (en)* | 2002-01-31 | 2007-09-05 | シチズン電子株式会社 | Double-sided LED package |
| JP2003243700A (en)* | 2002-02-12 | 2003-08-29 | Toyoda Gosei Co Ltd | Group III nitride compound semiconductor light emitting device |
| CN100468789C (en)* | 2002-02-15 | 2009-03-11 | 三菱化学株式会社 | Light emitting device and illuminator using the same |
| US6881983B2 (en)* | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
| JP4113017B2 (en)* | 2002-03-27 | 2008-07-02 | シチズンホールディングス株式会社 | Light source device and display device |
| TW558065U (en)* | 2002-03-28 | 2003-10-11 | Solidlite Corp | Purplish pink light emitting diode |
| US6762432B2 (en)* | 2002-04-01 | 2004-07-13 | Micrel, Inc. | Electrical field alignment vernier |
| JP4172196B2 (en)* | 2002-04-05 | 2008-10-29 | 豊田合成株式会社 | Light emitting diode |
| US6911079B2 (en)* | 2002-04-19 | 2005-06-28 | Kopin Corporation | Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
| US7432642B2 (en)* | 2002-04-25 | 2008-10-07 | Nichia Corporation | Semiconductor light emitting device provided with a light conversion element using a haloborate phosphor composition |
| CA2427559A1 (en)* | 2002-05-15 | 2003-11-15 | Sumitomo Electric Industries, Ltd. | White color light emitting device |
| US8232725B1 (en)* | 2002-05-21 | 2012-07-31 | Imaging Systems Technology | Plasma-tube gas discharge device |
| KR100449502B1 (en)* | 2002-05-29 | 2004-09-22 | 서울반도체 주식회사 | White Light Emitting Diode and Methode for Manufacturing the same |
| KR100449503B1 (en)* | 2002-05-29 | 2004-09-22 | 서울반도체 주식회사 | Chip Type White Light-emitting diode and Method of Manufacturing the same |
| KR100632659B1 (en)* | 2002-05-31 | 2006-10-11 | 서울반도체 주식회사 | White light emitting diode |
| US7275844B2 (en)* | 2002-06-11 | 2007-10-02 | Akidenki Kabushikigaisya | Generator powered bicycle headlamp and electrical circuit |
| US20030230977A1 (en)* | 2002-06-12 | 2003-12-18 | Epstein Howard C. | Semiconductor light emitting device with fluoropolymer lens |
| CA2489237A1 (en)* | 2002-06-13 | 2003-12-24 | Cree, Inc. | Semiconductor emitter comprising a saturated phosphor |
| CN1663044A (en)* | 2002-06-14 | 2005-08-31 | 莱尼股份有限公司 | Lamps and methods of making them |
| US6972516B2 (en)* | 2002-06-14 | 2005-12-06 | University Of Cincinnati | Photopump-enhanced electroluminescent devices |
| AU2003251539A1 (en) | 2002-06-17 | 2003-12-31 | Electrode for p-type gallium nitride-based semiconductors | |
| US7002180B2 (en) | 2002-06-28 | 2006-02-21 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting device |
| US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
| US6841802B2 (en)* | 2002-06-26 | 2005-01-11 | Oriol, Inc. | Thin film light emitting diode |
| TW558775B (en)* | 2002-06-27 | 2003-10-21 | Solidlite Corp | Package of compound type LED |
| US6809471B2 (en) | 2002-06-28 | 2004-10-26 | General Electric Company | Phosphors containing oxides of alkaline-earth and Group-IIIB metals and light sources incorporating the same |
| US6955985B2 (en) | 2002-06-28 | 2005-10-18 | Kopin Corporation | Domain epitaxy for thin film growth |
| WO2004007241A2 (en)* | 2002-07-16 | 2004-01-22 | Schefenacker Vision Systems Usa Inc. | White led headlight |
| JP4118742B2 (en)* | 2002-07-17 | 2008-07-16 | シャープ株式会社 | Light emitting diode lamp and light emitting diode display device |
| AU2003261181A1 (en)* | 2002-07-19 | 2004-02-09 | Microsemi Corporation | Process for fabricating, and light emitting device resulting from, a homogenously mixed powder/pelletized compound |
| JP3923867B2 (en)* | 2002-07-26 | 2007-06-06 | 株式会社アドバンスト・ディスプレイ | Planar light source device and liquid crystal display device using the same |
| WO2004013916A1 (en) | 2002-08-01 | 2004-02-12 | Nichia Corporation | Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same |
| JP2004071807A (en)* | 2002-08-06 | 2004-03-04 | Sharp Corp | Lighting device, camera device, and portable device |
| US20040032728A1 (en)* | 2002-08-19 | 2004-02-19 | Robert Galli | Optical assembly for LED chip package |
| WO2004019422A1 (en)* | 2002-08-21 | 2004-03-04 | Seoul Semiconductor Co., Ltd. | White light emitting device |
| US10340424B2 (en) | 2002-08-30 | 2019-07-02 | GE Lighting Solutions, LLC | Light emitting diode component |
| KR100499129B1 (en) | 2002-09-02 | 2005-07-04 | 삼성전기주식회사 | Light emitting laser diode and fabricatin method thereof |
| US7244965B2 (en) | 2002-09-04 | 2007-07-17 | Cree Inc, | Power surface mount light emitting die package |
| US7264378B2 (en)* | 2002-09-04 | 2007-09-04 | Cree, Inc. | Power surface mount light emitting die package |
| US7775685B2 (en)* | 2003-05-27 | 2010-08-17 | Cree, Inc. | Power surface mount light emitting die package |
| CN1318540C (en)* | 2002-09-13 | 2007-05-30 | 北京有色金属研究总院 | Blue light-excitated white phosphor powder for LED and production method thereof |
| KR101182041B1 (en)* | 2002-09-19 | 2012-09-11 | 크리 인코포레이티드 | Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods therefor |
| JP4263453B2 (en)* | 2002-09-25 | 2009-05-13 | パナソニック株式会社 | Inorganic oxide and light emitting device using the same |
| US7460196B2 (en)* | 2002-09-25 | 2008-12-02 | Lg Displays Co., Ltd. | Backlight device for liquid crystal display and method of fabricating the same |
| US6815241B2 (en)* | 2002-09-25 | 2004-11-09 | Cao Group, Inc. | GaN structures having low dislocation density and methods of manufacture |
| JP4201167B2 (en)* | 2002-09-26 | 2008-12-24 | シチズン電子株式会社 | Manufacturing method of white light emitting device |
| CN1233046C (en)* | 2002-09-29 | 2005-12-21 | 光宝科技股份有限公司 | A method for producing a white light emitting diode light source |
| JP2004127988A (en)* | 2002-09-30 | 2004-04-22 | Toyoda Gosei Co Ltd | White light emitting device |
| JP2004131567A (en)* | 2002-10-09 | 2004-04-30 | Hamamatsu Photonics Kk | Illuminant, and electron beam detector, scanning electron microscope and mass spectrometer using the same |
| US7009199B2 (en)* | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
| US7554258B2 (en) | 2002-10-22 | 2009-06-30 | Osram Opto Semiconductors Gmbh | Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body |
| RU2219622C1 (en)* | 2002-10-25 | 2003-12-20 | Закрытое акционерное общество "Светлана-Оптоэлектроника" | Semiconductor white light source |
| TW586246B (en)* | 2002-10-28 | 2004-05-01 | Super Nova Optoelectronics Cor | Manufacturing method of white light LED and the light-emitting device thereof |
| JP4040955B2 (en)* | 2002-11-06 | 2008-01-30 | 株式会社小糸製作所 | Vehicle headlamp and manufacturing method thereof |
| JP5138145B2 (en)* | 2002-11-12 | 2013-02-06 | 日亜化学工業株式会社 | Phosphor laminate structure and light source using the same |
| KR20040044701A (en)* | 2002-11-21 | 2004-05-31 | 삼성전기주식회사 | A light emitting device package and a method of manufacturing the same |
| JP2004186168A (en)* | 2002-11-29 | 2004-07-02 | Shin Etsu Chem Co Ltd | Silicone resin composition for light emitting diode element |
| JP4072632B2 (en)* | 2002-11-29 | 2008-04-09 | 豊田合成株式会社 | Light emitting device and light emitting method |
| US7595113B2 (en)* | 2002-11-29 | 2009-09-29 | Shin-Etsu Chemical Co., Ltd. | LED devices and silicone resin composition therefor |
| TW559627B (en)* | 2002-12-03 | 2003-11-01 | Lite On Technology Corp | Method for producing bright white light diode with fluorescent powder |
| US6897486B2 (en) | 2002-12-06 | 2005-05-24 | Ban P. Loh | LED package die having a small footprint |
| US7692206B2 (en)* | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
| US6744196B1 (en)* | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
| US6975369B1 (en)* | 2002-12-12 | 2005-12-13 | Gelcore, Llc | Liquid crystal display with color backlighting employing light emitting diodes |
| JP4418758B2 (en)* | 2002-12-13 | 2010-02-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Irradiation system having a radiation source and a light emitter |
| DE10259945A1 (en)* | 2002-12-20 | 2004-07-01 | Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. | Phosphors with an extended fluorescence lifetime |
| TW591811B (en)* | 2003-01-02 | 2004-06-11 | Epitech Technology Corp Ltd | Color mixing light emitting diode |
| TWI351548B (en) | 2003-01-15 | 2011-11-01 | Semiconductor Energy Lab | Manufacturing method of liquid crystal display dev |
| KR100639647B1 (en)* | 2003-01-20 | 2006-11-01 | 우베 고산 가부시키가이샤 | Ceramic composite material for optical conversion and use thereof |
| DE102004003135A1 (en)* | 2003-02-20 | 2004-09-02 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Coated phosphor and light-emitting device with such phosphor |
| DE10307282A1 (en)* | 2003-02-20 | 2004-09-02 | Osram Opto Semiconductors Gmbh | Coated phosphor, light-emitting device with such phosphor and method for its production |
| KR20050113200A (en)* | 2003-02-26 | 2005-12-01 | 크리, 인코포레이티드 | Composite white light source and method for fabricating |
| TWI289937B (en)* | 2003-03-04 | 2007-11-11 | Topco Scient Co Ltd | White light LED |
| US20040173807A1 (en)* | 2003-03-04 | 2004-09-09 | Yongchi Tian | Garnet phosphors, method of making the same, and application to semiconductor LED chips for manufacturing lighting devices |
| CN101789482B (en) | 2003-03-10 | 2013-04-17 | 丰田合成株式会社 | Solid element device and method for manufacture thereof |
| EP1604402A1 (en)* | 2003-03-12 | 2005-12-14 | Lednium Pty Limited | A lamp and a process for producing a lamp |
| CN100509994C (en)* | 2003-03-13 | 2009-07-08 | 日亚化学工业株式会社 | Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device |
| WO2004081140A1 (en)* | 2003-03-13 | 2004-09-23 | Nichia Corporation | Light emitting film, luminescent device, method for manufacturing light emitting film and method for manufacturing luminescent device |
| US7038370B2 (en)* | 2003-03-17 | 2006-05-02 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting device |
| US7276025B2 (en)* | 2003-03-20 | 2007-10-02 | Welch Allyn, Inc. | Electrical adapter for medical diagnostic instruments using LEDs as illumination sources |
| CN1768122A (en)* | 2003-03-28 | 2006-05-03 | 奥斯兰姆奥普托半导体有限责任公司 | Process for producing a coating on the surface of a particle or material and the resulting product |
| US20040252488A1 (en)* | 2003-04-01 | 2004-12-16 | Innovalight | Light-emitting ceiling tile |
| US7279832B2 (en)* | 2003-04-01 | 2007-10-09 | Innovalight, Inc. | Phosphor materials and illumination devices made therefrom |
| US20040196318A1 (en)* | 2003-04-01 | 2004-10-07 | Su Massharudin Bin | Method of depositing phosphor on light emitting diode |
| US7278766B2 (en)* | 2003-04-04 | 2007-10-09 | Honeywell International Inc. | LED based light guide for dual mode aircraft formation lighting |
| JP2004311822A (en)* | 2003-04-09 | 2004-11-04 | Solidlite Corp | Purplish red light emitting diode |
| DE10316769A1 (en)* | 2003-04-10 | 2004-10-28 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Luminescence conversion LED used in optical semiconductor components has LED chip emitting primary radiation in specified region which is partially or completely converted into longer wavelength radiation |
| US6903380B2 (en) | 2003-04-11 | 2005-06-07 | Weldon Technologies, Inc. | High power light emitting diode |
| KR20040090667A (en)* | 2003-04-18 | 2004-10-26 | 삼성전기주식회사 | light unit for displaying |
| US20040207311A1 (en)* | 2003-04-18 | 2004-10-21 | Jung-Pin Cheng | White light emitting device |
| US7125501B2 (en)* | 2003-04-21 | 2006-10-24 | Sarnoff Corporation | High efficiency alkaline earth metal thiogallate-based phosphors |
| US7368179B2 (en)* | 2003-04-21 | 2008-05-06 | Sarnoff Corporation | Methods and devices using high efficiency alkaline earth metal thiogallate-based phosphors |
| KR20040092512A (en) | 2003-04-24 | 2004-11-04 | (주)그래픽테크노재팬 | A semiconductor light emitting device with reflectors having a cooling function |
| CA2523544A1 (en) | 2003-04-30 | 2004-11-18 | Cree, Inc. | High powered light emitter packages with compact optics |
| KR100691143B1 (en)* | 2003-04-30 | 2007-03-09 | 삼성전기주식회사 | Light Emitting Diode with Multilayer Fluorescent Layer |
| US7005679B2 (en)* | 2003-05-01 | 2006-02-28 | Cree, Inc. | Multiple component solid state white light |
| US7528421B2 (en) | 2003-05-05 | 2009-05-05 | Lamina Lighting, Inc. | Surface mountable light emitting diode assemblies packaged for high temperature operation |
| US7633093B2 (en) | 2003-05-05 | 2009-12-15 | Lighting Science Group Corporation | Method of making optical light engines with elevated LEDs and resulting product |
| US7157745B2 (en) | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
| US7777235B2 (en) | 2003-05-05 | 2010-08-17 | Lighting Science Group Corporation | Light emitting diodes with improved light collimation |
| US7176501B2 (en) | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
| US7108386B2 (en) | 2003-05-12 | 2006-09-19 | Illumitech Inc. | High-brightness LED-phosphor coupling |
| US6982045B2 (en)* | 2003-05-17 | 2006-01-03 | Phosphortech Corporation | Light emitting device having silicate fluorescent phosphor |
| JP2004352928A (en)* | 2003-05-30 | 2004-12-16 | Mitsubishi Chemicals Corp | Light emitting device and lighting device |
| JP3977774B2 (en)* | 2003-06-03 | 2007-09-19 | ローム株式会社 | Optical semiconductor device |
| US7122841B2 (en) | 2003-06-04 | 2006-10-17 | Kopin Corporation | Bonding pad for gallium nitride-based light-emitting devices |
| US7521667B2 (en) | 2003-06-23 | 2009-04-21 | Advanced Optical Technologies, Llc | Intelligent solid state lighting |
| US7145125B2 (en) | 2003-06-23 | 2006-12-05 | Advanced Optical Technologies, Llc | Integrating chamber cone light using LED sources |
| US7075225B2 (en)* | 2003-06-27 | 2006-07-11 | Tajul Arosh Baroky | White light emitting device |
| US7462983B2 (en)* | 2003-06-27 | 2008-12-09 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | White light emitting device |
| JP2005026688A (en)* | 2003-06-30 | 2005-01-27 | Osram Opto Semiconductors Gmbh | Radiation emitting semiconductor chip, method for manufacturing the semiconductor chip, and method for adjusting and setting the brightness of the semiconductor chip |
| US7088038B2 (en)* | 2003-07-02 | 2006-08-08 | Gelcore Llc | Green phosphor for general illumination applications |
| US7602388B2 (en)* | 2003-07-16 | 2009-10-13 | Honeywood Technologies, Llc | Edge preservation for spatially varying power conservation |
| US7663597B2 (en)* | 2003-07-16 | 2010-02-16 | Honeywood Technologies, Llc | LCD plateau power conservation |
| US7580033B2 (en)* | 2003-07-16 | 2009-08-25 | Honeywood Technologies, Llc | Spatial-based power savings |
| US7583260B2 (en)* | 2003-07-16 | 2009-09-01 | Honeywood Technologies, Llc | Color preservation for spatially varying power conservation |
| US7786988B2 (en)* | 2003-07-16 | 2010-08-31 | Honeywood Technologies, Llc | Window information preservation for spatially varying power conservation |
| US7714831B2 (en) | 2003-07-16 | 2010-05-11 | Honeywood Technologies, Llc | Background plateau manipulation for display device power conservation |
| US7112921B2 (en)* | 2003-08-02 | 2006-09-26 | Phosphortech Inc. | Light emitting device having selenium-based fluorescent phosphor |
| US7109648B2 (en)* | 2003-08-02 | 2006-09-19 | Phosphortech Inc. | Light emitting device having thio-selenide fluorescent phosphor |
| US6987353B2 (en)* | 2003-08-02 | 2006-01-17 | Phosphortech Corporation | Light emitting device having sulfoselenide fluorescent phosphor |
| KR20050016804A (en)* | 2003-08-04 | 2005-02-21 | 서울반도체 주식회사 | Phosphor structure with high brightness for Light Emitting Device and Light Emitting Device using the same |
| JP3773525B2 (en)* | 2003-08-07 | 2006-05-10 | 松下電器産業株式会社 | LED lighting source |
| US7026755B2 (en)* | 2003-08-07 | 2006-04-11 | General Electric Company | Deep red phosphor for general illumination applications |
| US20050104072A1 (en) | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
| EP1659335A4 (en)* | 2003-08-28 | 2010-05-05 | Mitsubishi Chem Corp | LIGHT EMITTING DEVICE AND PHOSPHORUS |
| TWI233697B (en)* | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
| US20060285324A1 (en)* | 2003-08-29 | 2006-12-21 | Koninklijke Philips Electronics N.V. | Color-mixing lighting system |
| US7029935B2 (en)* | 2003-09-09 | 2006-04-18 | Cree, Inc. | Transmissive optical elements including transparent plastic shell having a phosphor dispersed therein, and methods of fabricating same |
| US7183587B2 (en)* | 2003-09-09 | 2007-02-27 | Cree, Inc. | Solid metal block mounting substrates for semiconductor light emitting devices |
| US7502392B2 (en)* | 2003-09-12 | 2009-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser oscillator |
| JP3813144B2 (en)* | 2003-09-12 | 2006-08-23 | ローム株式会社 | Light emission control circuit |
| US7204607B2 (en)* | 2003-09-16 | 2007-04-17 | Matsushita Electric Industrial Co., Ltd. | LED lamp |
| TW200512949A (en)* | 2003-09-17 | 2005-04-01 | Nanya Plastics Corp | A method to provide emission of white color light by the principle of secondary excitation and its product |
| US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
| JP2005089671A (en)* | 2003-09-19 | 2005-04-07 | Shin Etsu Chem Co Ltd | Curable silicone resin composition |
| JP4378242B2 (en)* | 2003-09-25 | 2009-12-02 | 株式会社小糸製作所 | Vehicle lighting |
| EP1670073B1 (en)* | 2003-09-30 | 2014-07-02 | Kabushiki Kaisha Toshiba | Light emitting device |
| US7135129B2 (en) | 2003-10-22 | 2006-11-14 | Yano Tech (Shanghai) Limited | Inorganic fluorescent material used for solid-state light source |
| US7094362B2 (en)* | 2003-10-29 | 2006-08-22 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
| US7442326B2 (en) | 2003-10-29 | 2008-10-28 | Lumination Llc | Red garnet phosphors for use in LEDs |
| US7252787B2 (en)* | 2003-10-29 | 2007-08-07 | General Electric Company | Garnet phosphor materials having enhanced spectral characteristics |
| KR100558446B1 (en)* | 2003-11-19 | 2006-03-10 | 삼성전기주식회사 | Method for manufacturing molding compound resin tablet for wavelength conversion and method for manufacturing white light emitting diode using same |
| JP3837588B2 (en) | 2003-11-26 | 2006-10-25 | 独立行政法人物質・材料研究機構 | Phosphors and light emitting devices using phosphors |
| JP4654670B2 (en)* | 2003-12-16 | 2011-03-23 | 日亜化学工業株式会社 | Light emitting device and manufacturing method thereof |
| US7066623B2 (en)* | 2003-12-19 | 2006-06-27 | Soo Ghee Lee | Method and apparatus for producing untainted white light using off-white light emitting diodes |
| TWI229462B (en)* | 2003-12-22 | 2005-03-11 | Solidlite Corp | Improved method of white light LED |
| DE10360546A1 (en)* | 2003-12-22 | 2005-07-14 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Phosphor and light source with such phosphor |
| KR100610249B1 (en)* | 2003-12-23 | 2006-08-09 | 럭스피아 주식회사 | Yellow light emitting phosphor and white semiconductor light emitting device using the same |
| US7791274B2 (en)* | 2004-01-07 | 2010-09-07 | Panasonic Corporation | LED lamp |
| JP4231418B2 (en)* | 2004-01-07 | 2009-02-25 | 株式会社小糸製作所 | Light emitting module and vehicle lamp |
| US7183588B2 (en)* | 2004-01-08 | 2007-02-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emission device |
| JP2005209794A (en)* | 2004-01-21 | 2005-08-04 | Koito Mfg Co Ltd | Light emitting module and lamp |
| JP3895362B2 (en)* | 2004-01-29 | 2007-03-22 | 松下電器産業株式会社 | LED lighting source |
| TWI250664B (en)* | 2004-01-30 | 2006-03-01 | South Epitaxy Corp | White light LED |
| US20050179046A1 (en)* | 2004-02-13 | 2005-08-18 | Kopin Corporation | P-type electrodes in gallium nitride-based light-emitting devices |
| US20050179042A1 (en)* | 2004-02-13 | 2005-08-18 | Kopin Corporation | Monolithic integration and enhanced light extraction in gallium nitride-based light-emitting devices |
| ATE450591T1 (en)* | 2004-02-20 | 2009-12-15 | Koninkl Philips Electronics Nv | LIGHTING SYSTEM WITH A RADIATION SOURCE AND A FLUORESCENT MATERIAL |
| US7250715B2 (en)* | 2004-02-23 | 2007-07-31 | Philips Lumileds Lighting Company, Llc | Wavelength converted semiconductor light emitting devices |
| EP1566426B1 (en) | 2004-02-23 | 2015-12-02 | Philips Lumileds Lighting Company LLC | Phosphor converted light emitting device |
| US10575376B2 (en) | 2004-02-25 | 2020-02-25 | Lynk Labs, Inc. | AC light emitting diode and AC LED drive methods and apparatus |
| US10499465B2 (en) | 2004-02-25 | 2019-12-03 | Lynk Labs, Inc. | High frequency multi-voltage and multi-brightness LED lighting devices and systems and methods of using same |
| WO2011143510A1 (en) | 2010-05-12 | 2011-11-17 | Lynk Labs, Inc. | Led lighting system |
| WO2005083805A1 (en)* | 2004-02-26 | 2005-09-09 | Matsushita Electric Industrial Co., Ltd. | Led light source |
| TWI262609B (en)* | 2004-02-27 | 2006-09-21 | Dowa Mining Co | Phosphor and manufacturing method thereof, and light source, LED using said phosphor |
| DE102004029412A1 (en)* | 2004-02-27 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor chip and method for producing such a semiconductor chip |
| TWI229465B (en) | 2004-03-02 | 2005-03-11 | Genesis Photonics Inc | Single chip white light component |
| WO2005086239A1 (en) | 2004-03-05 | 2005-09-15 | Konica Minolta Holdings, Inc. | White light emitting diode (led) and process for producing white led |
| US7573072B2 (en)* | 2004-03-10 | 2009-08-11 | Lumination Llc | Phosphor and blends thereof for use in LEDs |
| DE102004012028A1 (en)* | 2004-03-11 | 2005-10-06 | Lite-On Technology Co. | Phosphorescent material, as well as using this white light emitting device |
| DE602005023713D1 (en)* | 2004-03-12 | 2010-11-04 | Avery Dennison Corp | NOTINFORMATIONS LIGHTING SYSTEM |
| EP1723624B1 (en)* | 2004-03-12 | 2008-08-06 | Avery Dennison Corporation | Emergency information sign |
| KR20070001183A (en)* | 2004-03-12 | 2007-01-03 | 애버리 데니슨 코포레이션 | Lighting system with passive phosphorescent light source |
| CN100410703C (en)* | 2004-03-12 | 2008-08-13 | 艾利丹尼森公司 | Illumination system with passive phosphorescent light source |
| US20050205874A1 (en)* | 2004-03-19 | 2005-09-22 | Ru-Shi Liu | Phosphor material and white light-emitting device using the same |
| US6924233B1 (en)* | 2004-03-19 | 2005-08-02 | Agilent Technologies, Inc. | Phosphor deposition methods |
| JP2005272697A (en)* | 2004-03-25 | 2005-10-06 | Shin Etsu Chem Co Ltd | Curable silicone resin composition, optical semiconductor sealing material, and optical semiconductor device |
| US20070194693A1 (en)* | 2004-03-26 | 2007-08-23 | Hajime Saito | Light-Emitting Device |
| JP2005310756A (en)* | 2004-03-26 | 2005-11-04 | Koito Mfg Co Ltd | Light source module and vehicle headlamp |
| US7355284B2 (en) | 2004-03-29 | 2008-04-08 | Cree, Inc. | Semiconductor light emitting devices including flexible film having therein an optical element |
| DE102004015570A1 (en)* | 2004-03-30 | 2005-11-10 | J.S. Technology Co., Ltd. | White light emitting diode arrangement, e.g. for liquid crystal display (LCD) module, combines known combinations of color light emitting diodes (LEDs) and luminescent materials, each emitting white light |
| JP5013405B2 (en)* | 2004-03-31 | 2012-08-29 | 日本電気硝子株式会社 | Phosphor and light emitting diode |
| WO2005104247A1 (en) | 2004-04-19 | 2005-11-03 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating led illumination light source and led illumination light source |
| US7462086B2 (en)* | 2004-04-21 | 2008-12-09 | Philips Lumileds Lighting Company, Llc | Phosphor for phosphor-converted semiconductor light emitting device |
| KR101041311B1 (en)* | 2004-04-27 | 2011-06-14 | 파나소닉 주식회사 | Phosphor composition, its manufacturing method, and light-emitting device using the phosphor composition |
| CN100401516C (en)* | 2004-04-28 | 2008-07-09 | 宏齐科技股份有限公司 | Method for manufacturing white light LED assembly |
| TWI228841B (en)* | 2004-04-29 | 2005-03-01 | Lite On Technology Corp | Luminescence method and apparatus for color temperature adjustable white light |
| US7837348B2 (en) | 2004-05-05 | 2010-11-23 | Rensselaer Polytechnic Institute | Lighting system using multiple colored light emitting sources and diffuser element |
| AU2005240186B2 (en) | 2004-05-05 | 2011-02-03 | Rensselaer Polytechnic Institute | High efficiency light source using solid-state emitter and down-conversion material |
| KR100655894B1 (en)* | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Wavelength conversion light emitting device with excellent color temperature and color rendering |
| US11158768B2 (en) | 2004-05-07 | 2021-10-26 | Bruce H. Baretz | Vacuum light emitting diode |
| US7315119B2 (en)* | 2004-05-07 | 2008-01-01 | Avago Technologies Ip (Singapore) Pte Ltd | Light-emitting device having a phosphor particle layer with specific thickness |
| KR100658700B1 (en) | 2004-05-13 | 2006-12-15 | 서울옵토디바이스주식회사 | Light emitting device combining RGB light emitting element and phosphor |
| US7077978B2 (en)* | 2004-05-14 | 2006-07-18 | General Electric Company | Phosphors containing oxides of alkaline-earth and group-IIIB metals and white-light sources incorporating same |
| TWI241034B (en)* | 2004-05-20 | 2005-10-01 | Lighthouse Technology Co Ltd | Light emitting diode package |
| US7339332B2 (en)* | 2004-05-24 | 2008-03-04 | Honeywell International, Inc. | Chroma compensated backlit display |
| CN101163775B (en)* | 2004-05-27 | 2011-12-28 | 皇家飞利浦电子股份有限公司 | Illumination system comprising a radiation source and a fluorescent material |
| US7456499B2 (en)* | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
| US7280288B2 (en)* | 2004-06-04 | 2007-10-09 | Cree, Inc. | Composite optical lens with an integrated reflector |
| US8308980B2 (en)* | 2004-06-10 | 2012-11-13 | Seoul Semiconductor Co., Ltd. | Light emitting device |
| KR100665298B1 (en)* | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Light emitting device |
| KR100665299B1 (en)* | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Emitting material |
| JP4583076B2 (en) | 2004-06-11 | 2010-11-17 | スタンレー電気株式会社 | Light emitting element |
| US7065534B2 (en)* | 2004-06-23 | 2006-06-20 | Microsoft Corporation | Anomaly detection in data perspectives |
| US7633217B2 (en) | 2004-06-24 | 2009-12-15 | Ube Industries, Ltd. | White-light light emitting diode device |
| KR20060000313A (en)* | 2004-06-28 | 2006-01-06 | 루미마이크로 주식회사 | Method for producing a color conversion light-emitting device comprising a large particle fluorescent powder and a resin composition used therein |
| DE102004031391B4 (en)* | 2004-06-29 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Electronic component with housing for ESD protection |
| KR20070048661A (en)* | 2004-06-30 | 2007-05-09 | 미쓰비시 가가꾸 가부시키가이샤 | Phosphor, Light-Emitting Element Using the Same, and Image Display Device, Illumination Device |
| US7255469B2 (en)* | 2004-06-30 | 2007-08-14 | 3M Innovative Properties Company | Phosphor based illumination system having a light guide and an interference reflector |
| US7329905B2 (en)* | 2004-06-30 | 2008-02-12 | Cree, Inc. | Chip-scale methods for packaging light emitting devices and chip-scale packaged light emitting devices |
| US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| US20060006366A1 (en)* | 2004-07-06 | 2006-01-12 | Vladimir Abramov | Wave length shifting compositions for white emitting diode systems |
| EP1769050B1 (en) | 2004-07-06 | 2013-01-16 | Lightscape Materials Inc. | Efficient, green-emitting phosphors, and combinations with red-emitting phosphors |
| US8508119B2 (en)* | 2004-07-13 | 2013-08-13 | Fujikura Ltd. | Phosphor and an incandescent lamp color light emitting diode lamp using the same |
| CN100485976C (en)* | 2004-07-14 | 2009-05-06 | 凯鼎科技股份有限公司 | LED package |
| JP4422653B2 (en)* | 2004-07-28 | 2010-02-24 | Ｄｏｗａエレクトロニクス株式会社 | Phosphor, production method thereof, and light source |
| US8417215B2 (en)* | 2004-07-28 | 2013-04-09 | Koninklijke Philips Electronics N.V. | Method for positioning of wireless medical devices with short-range radio frequency technology |
| US8017035B2 (en)* | 2004-08-04 | 2011-09-13 | Intematix Corporation | Silicate-based yellow-green phosphors |
| US7267787B2 (en)* | 2004-08-04 | 2007-09-11 | Intematix Corporation | Phosphor systems for a white light emitting diode (LED) |
| US7311858B2 (en)* | 2004-08-04 | 2007-12-25 | Intematix Corporation | Silicate-based yellow-green phosphors |
| FR2874021B1 (en) | 2004-08-09 | 2006-09-29 | Saint Gobain Cristaux Detecteu | DENSE AND RAPID SCINTILLATOR MATERIAL WITH LOW DELAYED LUMINESCENCE |
| US7750352B2 (en) | 2004-08-10 | 2010-07-06 | Pinion Technologies, Inc. | Light strips for lighting and backlighting applications |
| US7259401B2 (en)* | 2004-08-23 | 2007-08-21 | Lite-On Technology Corporation | Reflection-type optoelectronic semiconductor device |
| US20060044806A1 (en)* | 2004-08-25 | 2006-03-02 | Abramov Vladimir S | Light emitting diode system packages |
| US7470926B2 (en)* | 2004-09-09 | 2008-12-30 | Toyoda Gosei Co., Ltd | Solid-state optical device |
| CA2579196C (en)* | 2004-09-10 | 2010-06-22 | Color Kinetics Incorporated | Lighting zone control methods and apparatus |
| JP4667803B2 (en) | 2004-09-14 | 2011-04-13 | 日亜化学工業株式会社 | Light emitting device |
| US7217583B2 (en) | 2004-09-21 | 2007-05-15 | Cree, Inc. | Methods of coating semiconductor light emitting elements by evaporating solvent from a suspension |
| DE102004045950A1 (en)* | 2004-09-22 | 2006-03-30 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component, optoelectronic component and method for producing an optoelectronic component |
| US7372198B2 (en)* | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
| TWI256149B (en)* | 2004-09-27 | 2006-06-01 | Advanced Optoelectronic Tech | Light apparatus having adjustable color light and manufacturing method thereof |
| US20060067073A1 (en)* | 2004-09-30 | 2006-03-30 | Chu-Chi Ting | White led device |
| JP4060841B2 (en)* | 2004-10-06 | 2008-03-12 | 住友ゴム工業株式会社 | Raw tire bead part molding method and raw tire bead part molding apparatus used therefor |
| KR100485673B1 (en) | 2004-10-11 | 2005-04-27 | 씨엠에스테크놀로지(주) | White photoluminescence device |
| KR101267284B1 (en)* | 2004-10-15 | 2013-08-07 | 미쓰비시 가가꾸 가부시키가이샤 | Fluorescent material, fluorescent device using the same, and image display device and lighting equipment |
| RU2315078C2 (en)* | 2004-10-18 | 2008-01-20 | Общество с ограниченной ответственностью Научно-производственная компания "Люминифор-Платан" (ООО НПК "Люминофор-Платан") | Photoluminophores for short-wave light-emitting diodes (led) |
| US7733002B2 (en) | 2004-10-19 | 2010-06-08 | Nichia Corporation | Semiconductor light emitting device provided with an alkaline earth metal boric halide phosphor for luminescence conversion |
| EP1811580A4 (en)* | 2004-10-21 | 2012-05-23 | Ube Industries | LUMINOUS DIODE ELEMENT, PLATE FOR LIGHT DIODE, AND METHOD FOR MANUFACTURING LIGHT DIODE ELEMENT |
| US20060097385A1 (en)* | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
| DE102005028748A1 (en)* | 2004-10-25 | 2006-05-04 | Osram Opto Semiconductors Gmbh | Electromagnetic radiation emitting semiconductor device and device package |
| US7670872B2 (en)* | 2004-10-29 | 2010-03-02 | LED Engin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
| US7473933B2 (en)* | 2004-10-29 | 2009-01-06 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
| US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
| US7772609B2 (en)* | 2004-10-29 | 2010-08-10 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
| US8134292B2 (en)* | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
| US8324641B2 (en)* | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
| US8816369B2 (en) | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
| JP4757477B2 (en)* | 2004-11-04 | 2011-08-24 | 株式会社 日立ディスプレイズ | Light source unit, illumination device using the same, and display device using the same |
| US7426780B2 (en) | 2004-11-10 | 2008-09-23 | Enpirion, Inc. | Method of manufacturing a power module |
| US7462317B2 (en) | 2004-11-10 | 2008-12-09 | Enpirion, Inc. | Method of manufacturing an encapsulated package for a magnetic device |
| US7481562B2 (en) | 2004-11-18 | 2009-01-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Device and method for providing illuminating light using quantum dots |
| US7866853B2 (en)* | 2004-11-19 | 2011-01-11 | Fujikura Ltd. | Light-emitting element mounting substrate and manufacturing method thereof, light-emitting element module and manufacturing method thereof, display device, lighting device, and traffic light |
| WO2006061747A2 (en) | 2004-12-07 | 2006-06-15 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising a radiation source and a luminescent material |
| US7745814B2 (en)* | 2004-12-09 | 2010-06-29 | 3M Innovative Properties Company | Polychromatic LED's and related semiconductor devices |
| US7719015B2 (en)* | 2004-12-09 | 2010-05-18 | 3M Innovative Properties Company | Type II broadband or polychromatic LED's |
| US7402831B2 (en)* | 2004-12-09 | 2008-07-22 | 3M Innovative Properties Company | Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission |
| US20060125716A1 (en)* | 2004-12-10 | 2006-06-15 | Wong Lye Y | Light-emitting diode display with compartment |
| CN100530715C (en) | 2004-12-17 | 2009-08-19 | 宇部兴产株式会社 | Light conversion structure and light emitting device using same |
| JP4591071B2 (en)* | 2004-12-20 | 2010-12-01 | 日亜化学工業株式会社 | Semiconductor device |
| US7322732B2 (en) | 2004-12-23 | 2008-01-29 | Cree, Inc. | Light emitting diode arrays for direct backlighting of liquid crystal displays |
| WO2006070899A1 (en) | 2004-12-27 | 2006-07-06 | Ube Industries, Ltd. | Sialon phosphor particle and process for producing the same |
| JP2006209076A (en)* | 2004-12-27 | 2006-08-10 | Nichia Chem Ind Ltd | Light guide and surface light emitting device using the same |
| TWI245440B (en)* | 2004-12-30 | 2005-12-11 | Ind Tech Res Inst | Light emitting diode |
| US8125137B2 (en) | 2005-01-10 | 2012-02-28 | Cree, Inc. | Multi-chip light emitting device lamps for providing high-CRI warm white light and light fixtures including the same |
| US7564180B2 (en)* | 2005-01-10 | 2009-07-21 | Cree, Inc. | Light emission device and method utilizing multiple emitters and multiple phosphors |
| JP2008527706A (en)* | 2005-01-10 | 2008-07-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Illumination system with ceramic luminescence converter |
| US9070850B2 (en) | 2007-10-31 | 2015-06-30 | Cree, Inc. | Light emitting diode package and method for fabricating same |
| US7646033B2 (en)* | 2005-01-11 | 2010-01-12 | Semileds Corporation | Systems and methods for producing white-light light emitting diodes |
| US7195944B2 (en)* | 2005-01-11 | 2007-03-27 | Semileds Corporation | Systems and methods for producing white-light emitting diodes |
| US8012774B2 (en)* | 2005-01-11 | 2011-09-06 | SemiLEDs Optoelectronics Co., Ltd. | Coating process for a light-emitting diode (LED) |
| US8680534B2 (en) | 2005-01-11 | 2014-03-25 | Semileds Corporation | Vertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white light |
| TWI249861B (en)* | 2005-01-12 | 2006-02-21 | Lighthouse Technology Co Ltd | Wavelength converting substance and light emitting device and encapsulating material comprising the same |
| US7304694B2 (en) | 2005-01-12 | 2007-12-04 | Cree, Inc. | Solid colloidal dispersions for backlighting of liquid crystal displays |
| US7777247B2 (en)* | 2005-01-14 | 2010-08-17 | Cree, Inc. | Semiconductor light emitting device mounting substrates including a conductive lead extending therein |
| KR100588209B1 (en) | 2005-01-19 | 2006-06-08 | 엘지전자 주식회사 | White light emitting device and its manufacturing method |
| US7602116B2 (en)* | 2005-01-27 | 2009-10-13 | Advanced Optoelectronic Technology, Inc. | Light apparatus capable of emitting light of multiple wavelengths using nanometer fluorescent material, light device and manufacturing method thereof |
| KR101139891B1 (en)* | 2005-01-31 | 2012-04-27 | 렌슬러 폴리테크닉 인스티튜트 | Light emitting diode device having diffusedly reflective surface |
| EP1686630A3 (en) | 2005-01-31 | 2009-03-04 | Samsung Electronics Co., Ltd. | Led device having diffuse reflective surface |
| JP5045432B2 (en)* | 2005-01-31 | 2012-10-10 | 宇部興産株式会社 | Method for producing red phosphor and red phosphor |
| KR20060088228A (en)* | 2005-02-01 | 2006-08-04 | 어드밴스드 옵토일렉트로닉 테크놀로지 인코포레이티드 | Light-emitting device, light-emitting device and method for manufacturing same that can emit light of multiple wavelengths using nanometer fluorescent material |
| US20070114562A1 (en)* | 2005-11-22 | 2007-05-24 | Gelcore, Llc | Red and yellow phosphor-converted LEDs for signal applications |
| US7358542B2 (en)* | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
| US7497973B2 (en) | 2005-02-02 | 2009-03-03 | Lumination Llc | Red line emitting phosphor materials for use in LED applications |
| US7648649B2 (en)* | 2005-02-02 | 2010-01-19 | Lumination Llc | Red line emitting phosphors for use in led applications |
| DE102005008834A1 (en)* | 2005-02-16 | 2006-08-24 | Aspre Ag | Display for the creation of colored pictures and texts recognizable by striking light |
| JP4669713B2 (en)* | 2005-02-18 | 2011-04-13 | 株式会社リコー | Image reading apparatus and image forming apparatus |
| TWI419375B (en)* | 2005-02-18 | 2013-12-11 | Nichia Corp | Light-emitting device with lens for controlling light distribution characteristics |
| ATE445686T1 (en)* | 2005-02-21 | 2009-10-15 | Koninkl Philips Electronics Nv | LIGHTING SYSTEM WITH RADIATION SOURCE AND LUMINESCENT MATERIAL |
| CN1684279A (en)* | 2005-02-25 | 2005-10-19 | 炬鑫科技股份有限公司 | Light emitting element |
| US20060193131A1 (en)* | 2005-02-28 | 2006-08-31 | Mcgrath William R | Circuit devices which include light emitting diodes, assemblies which include such circuit devices, and methods for directly replacing fluorescent tubes |
| CN101128563B (en)* | 2005-02-28 | 2012-05-23 | 三菱化学株式会社 | Phosphor, its production method and its application |
| US7439668B2 (en)* | 2005-03-01 | 2008-10-21 | Lumination Llc | Oxynitride phosphors for use in lighting applications having improved color quality |
| JP4866558B2 (en)* | 2005-03-10 | 2012-02-01 | シチズン電子株式会社 | Lighting device for image shooting |
| CN100454590C (en)* | 2005-03-11 | 2009-01-21 | 鸿富锦精密工业（深圳）有限公司 | Light-emitting diodes, light-emitting diode modules and backlight systems |
| US7274045B2 (en)* | 2005-03-17 | 2007-09-25 | Lumination Llc | Borate phosphor materials for use in lighting applications |
| JP5286639B2 (en)* | 2005-03-18 | 2013-09-11 | 三菱化学株式会社 | Phosphor mixture, light emitting device, image display device, and illumination device |
| WO2006098450A1 (en) | 2005-03-18 | 2006-09-21 | Mitsubishi Chemical Corporation | Light-emitting device, white light-emitting device, illuminator, and image display |
| CN100508227C (en)* | 2005-03-18 | 2009-07-01 | 三菱化学株式会社 | Light emitting device, white light emitting device, lighting device, and image display device |
| JP5652426B2 (en)* | 2005-03-18 | 2015-01-14 | 三菱化学株式会社 | Phosphor mixture, light emitting device, image display device, and illumination device |
| TWI249867B (en) | 2005-03-24 | 2006-02-21 | Lighthouse Technology Co Ltd | Light-emitting diode package, cold cathode fluorescence lamp and photoluminescence material thereof |
| US7276183B2 (en) | 2005-03-25 | 2007-10-02 | Sarnoff Corporation | Metal silicate-silica-based polymorphous phosphors and lighting devices |
| US7316497B2 (en)* | 2005-03-29 | 2008-01-08 | 3M Innovative Properties Company | Fluorescent volume light source |
| JP2006278980A (en)* | 2005-03-30 | 2006-10-12 | Sanyo Electric Co Ltd | Semiconductor light emitting device |
| KR101142519B1 (en)* | 2005-03-31 | 2012-05-08 | 서울반도체 주식회사 | Backlight panel employing white light emitting diode having red phosphor and green phosphor |
| JPWO2006106883A1 (en)* | 2005-03-31 | 2008-09-11 | Ｄｏｗａエレクトロニクス株式会社 | Phosphor, phosphor sheet and method for producing the same, and light emitting device using the phosphor |
| JP2006282447A (en) | 2005-03-31 | 2006-10-19 | Fuji Photo Film Co Ltd | Translucent material and manufacturing method thereof |
| US7733310B2 (en) | 2005-04-01 | 2010-06-08 | Prysm, Inc. | Display screens having optical fluorescent materials |
| US7474286B2 (en) | 2005-04-01 | 2009-01-06 | Spudnik, Inc. | Laser displays using UV-excitable phosphors emitting visible colored light |
| US7791561B2 (en) | 2005-04-01 | 2010-09-07 | Prysm, Inc. | Display systems having screens with optical fluorescent materials |
| US20060221022A1 (en)* | 2005-04-01 | 2006-10-05 | Roger Hajjar | Laser vector scanner systems with display screens having optical fluorescent materials |
| CA2614575C (en)* | 2005-04-06 | 2015-03-31 | Tir Technology Lp | White light luminaire with adjustable correlated colour temperature |
| DE102006016548B9 (en) | 2005-04-15 | 2021-12-16 | Osram Gmbh | Blue to yellow-orange emitting phosphor and light source with such a phosphor |
| US7489073B2 (en)* | 2005-04-15 | 2009-02-10 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Blue to yellow-orange emitting phosphor, and light source having such a phosphor |
| JP4972957B2 (en)* | 2005-04-18 | 2012-07-11 | 三菱化学株式会社 | Phosphor, light-emitting device using the same, image display device, and lighting device |
| US7329371B2 (en)* | 2005-04-19 | 2008-02-12 | Lumination Llc | Red phosphor for LED based lighting |
| US20060255712A1 (en)* | 2005-04-19 | 2006-11-16 | Masatsugu Masuda | Light emitting apparatus, liquid crystal display apparatus and lighting apparatus |
| JP4843990B2 (en)* | 2005-04-22 | 2011-12-21 | 日亜化学工業株式会社 | Phosphor and light emitting device using the same |
| GB2425449B (en)* | 2005-04-26 | 2007-05-23 | City Greening Engineering Comp | Irrigation system |
| US8089425B2 (en) | 2006-03-03 | 2012-01-03 | Prysm, Inc. | Optical designs for scanning beam display systems using fluorescent screens |
| US8000005B2 (en) | 2006-03-31 | 2011-08-16 | Prysm, Inc. | Multilayered fluorescent screens for scanning beam display systems |
| US7994702B2 (en) | 2005-04-27 | 2011-08-09 | Prysm, Inc. | Scanning beams displays based on light-emitting screens having phosphors |
| US7690167B2 (en)* | 2005-04-28 | 2010-04-06 | Antonic James P | Structural support framing assembly |
| JP4535928B2 (en)* | 2005-04-28 | 2010-09-01 | シャープ株式会社 | Semiconductor light emitting device |
| KR100704492B1 (en)* | 2005-05-02 | 2007-04-09 | 한국화학연구원 | Method for manufacturing white light emitting diode using phosphor |
| JP4738049B2 (en)* | 2005-05-02 | 2011-08-03 | ユニ・チャーム株式会社 | Absorbent articles |
| US7602408B2 (en) | 2005-05-04 | 2009-10-13 | Honeywood Technologies, Llc | Luminance suppression power conservation |
| US7760210B2 (en) | 2005-05-04 | 2010-07-20 | Honeywood Technologies, Llc | White-based power savings |
| TWI260799B (en)* | 2005-05-06 | 2006-08-21 | Harvatek Corp | Multi-wavelength white light light-emitting diode |
| DE102005023134A1 (en)* | 2005-05-19 | 2006-11-23 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Luminescence conversion LED |
| EP1887067B1 (en) | 2005-05-24 | 2014-04-16 | Mitsubishi Chemical Corporation | Phosphor and use thereof |
| ATE534720T1 (en) | 2005-05-24 | 2011-12-15 | Seoul Semiconductor Co Ltd | GREEN PHOSPHORUS FROM THIOGALLATE, RED PHOSPHORUS FROM ALKALINE EARTH SULPHIDE AND WHITE LIGHT EMITTING DEVICE BASED THEREOF |
| US7632000B2 (en)* | 2005-05-25 | 2009-12-15 | Samsung Electronics Co., Ltd. | Backlight assembly and liquid crystal display device having the same |
| TW200704283A (en) | 2005-05-27 | 2007-01-16 | Lamina Ceramics Inc | Solid state LED bridge rectifier light engine |
| JP2007049114A (en)* | 2005-05-30 | 2007-02-22 | Sharp Corp | Light emitting device and manufacturing method thereof |
| WO2006129228A2 (en)* | 2005-06-02 | 2006-12-07 | Philips Intellectual Property & Standards Gmbh | Illumination system comprising color deficiency compensating luminescent material |
| US8718437B2 (en) | 2006-03-07 | 2014-05-06 | Qd Vision, Inc. | Compositions, optical component, system including an optical component, devices, and other products |
| US8215815B2 (en) | 2005-06-07 | 2012-07-10 | Oree, Inc. | Illumination apparatus and methods of forming the same |
| EP1890343A4 (en)* | 2005-06-07 | 2014-04-23 | Fujikura Ltd | SUBSTRATE FOR MOUNTING LIGHT EMITTING DEVICES, LIGHT EMITTING DEVICE MODULE, LIGHTING DEVICE, TRAFFIC DISPLAY AND SIGNALING DEVICE |
| WO2006131924A2 (en) | 2005-06-07 | 2006-12-14 | Oree, Advanced Illumination Solutions Inc. | Illumination apparatus |
| US8272758B2 (en) | 2005-06-07 | 2012-09-25 | Oree, Inc. | Illumination apparatus and methods of forming the same |
| JP2006343500A (en)* | 2005-06-08 | 2006-12-21 | Olympus Corp | Light source device and projection optical device |
| US9412926B2 (en) | 2005-06-10 | 2016-08-09 | Cree, Inc. | High power solid-state lamp |
| US20060290133A1 (en)* | 2005-06-13 | 2006-12-28 | Westrim, Inc. | Postbound album |
| JP5124978B2 (en)* | 2005-06-13 | 2013-01-23 | 日亜化学工業株式会社 | Light emitting device |
| WO2006134982A1 (en)* | 2005-06-14 | 2006-12-21 | Denki Kagaku Kogyo Kabushiki Kaisha | Resin composition and sheet containing phosphor, and light emitting element using such composition and sheet |
| US7980743B2 (en) | 2005-06-14 | 2011-07-19 | Cree, Inc. | LED backlighting for displays |
| JP2006351773A (en)* | 2005-06-15 | 2006-12-28 | Rohm Co Ltd | Semiconductor light emitting device |
| KR100638868B1 (en)* | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | LED package having a metal reflective layer and a method of manufacturing the same |
| CA2597697C (en) | 2005-06-23 | 2014-12-02 | Rensselaer Polytechnic Institute | Package design for producing white light with short-wavelength leds and down-conversion materials |
| US8188687B2 (en)* | 2005-06-28 | 2012-05-29 | Seoul Opto Device Co., Ltd. | Light emitting device for AC power operation |
| US8896216B2 (en) | 2005-06-28 | 2014-11-25 | Seoul Viosys Co., Ltd. | Illumination system |
| TWI422044B (en)* | 2005-06-30 | 2014-01-01 | Cree Inc | Wafer-scale method for packaging light-emitting device and light-emitting device packaged by wafer scale |
| DE102005038698A1 (en)* | 2005-07-08 | 2007-01-18 | Tridonic Optoelectronics Gmbh | Optoelectronic components with adhesion promoter |
| JP2007027431A (en)* | 2005-07-15 | 2007-02-01 | Toshiba Corp | Light emitting device |
| KR100649679B1 (en)* | 2005-07-19 | 2006-11-27 | 삼성전기주식회사 | Side-emitting LED package and backlight unit using same |
| US20070025106A1 (en)* | 2005-07-29 | 2007-02-01 | Korry Electronics Co. | Night vision compatible area light fixture |
| TW200717866A (en)* | 2005-07-29 | 2007-05-01 | Toshiba Kk | Semiconductor light emitting device |
| WO2007015732A2 (en)* | 2005-08-01 | 2007-02-08 | Intex Recreation Corp. | A method of varying the color of light emitted by a light-emitting device |
| KR100533922B1 (en)* | 2005-08-05 | 2005-12-06 | 알티전자 주식회사 | Yellow phosphor and white light emitting device using there |
| KR101036530B1 (en)* | 2005-08-10 | 2011-05-24 | 우베 고산 가부시키가이샤 | LED Substrate and LED |
| US20100207139A1 (en)* | 2005-08-11 | 2010-08-19 | Holger Winkler | Photonic material having regularly arranged cavities |
| US7329907B2 (en) | 2005-08-12 | 2008-02-12 | Avago Technologies, Ecbu Ip Pte Ltd | Phosphor-converted LED devices having improved light distribution uniformity |
| KR100691273B1 (en)* | 2005-08-23 | 2007-03-12 | 삼성전기주식회사 | Composite phosphor powder, light emitting device and composite phosphor powder manufacturing method using same |
| US20070045641A1 (en)* | 2005-08-23 | 2007-03-01 | Yin Chua Janet B | Light source with UV LED and UV reflector |
| KR20080037734A (en) | 2005-08-23 | 2008-04-30 | 가부시끼가이샤 도시바 | Light emitting device and back light and liquid crystal display using the same |
| USD535707S1 (en) | 2005-08-25 | 2007-01-23 | Mattel, Inc. | Electronic toy house |
| US7847302B2 (en)* | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
| US20070052342A1 (en)* | 2005-09-01 | 2007-03-08 | Sharp Kabushiki Kaisha | Light-emitting device |
| JP2007067326A (en)* | 2005-09-02 | 2007-03-15 | Shinko Electric Ind Co Ltd | Light emitting diode and manufacturing method thereof |
| US7812358B2 (en)* | 2005-09-13 | 2010-10-12 | Showa Denko K.K. | Light-emitting device |
| JP2007110090A (en)* | 2005-09-13 | 2007-04-26 | Sony Corp | GaN-based semiconductor light emitting device, light emitting device, image display device, planar light source device, and liquid crystal display device assembly |
| JP4966530B2 (en) | 2005-09-15 | 2012-07-04 | 国立大学法人 新潟大学 | Phosphor |
| DE102005045649A1 (en)* | 2005-09-23 | 2007-03-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Light module and lighting system |
| USD533773S1 (en) | 2005-09-26 | 2006-12-19 | Mattel, Inc. | Packaging for a toy |
| JP5127455B2 (en)* | 2005-09-29 | 2013-01-23 | 株式会社東芝 | White light emitting device and method for manufacturing the same, backlight using the same, and liquid crystal display device |
| KR100959636B1 (en)* | 2005-09-30 | 2010-05-26 | 니치아 카가쿠 고교 가부시키가이샤 | Light emitting device and backlight unit using the same |
| KR100724591B1 (en) | 2005-09-30 | 2007-06-04 | 서울반도체 주식회사 | Light emitting device and LED backlight including same |
| KR20080059418A (en)* | 2005-09-30 | 2008-06-27 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Nitride and oxynitride cerium-based fluorescent materials for solid state lighting |
| US8631560B2 (en) | 2005-10-05 | 2014-01-21 | Enpirion, Inc. | Method of forming a magnetic device having a conductive clip |
| US7688172B2 (en) | 2005-10-05 | 2010-03-30 | Enpirion, Inc. | Magnetic device having a conductive clip |
| US8701272B2 (en) | 2005-10-05 | 2014-04-22 | Enpirion, Inc. | Method of forming a power module with a magnetic device having a conductive clip |
| US8139362B2 (en)* | 2005-10-05 | 2012-03-20 | Enpirion, Inc. | Power module with a magnetic device having a conductive clip |
| US7479660B2 (en)* | 2005-10-21 | 2009-01-20 | Perkinelmer Elcos Gmbh | Multichip on-board LED illumination device |
| KR100693463B1 (en)* | 2005-10-21 | 2007-03-12 | 한국광기술원 | A light diffusing light emitting diode having an encapsulation layer comprising two or more materials |
| US7360934B2 (en)* | 2005-10-24 | 2008-04-22 | Sumitomo Electric Industries, Ltd. | Light supply unit, illumination unit, and illumination system |
| KR100571882B1 (en)* | 2005-10-27 | 2006-04-17 | 알티전자 주식회사 | Yellow phosphor and white light emitting device comprising the same |
| KR100771779B1 (en)* | 2005-11-04 | 2007-10-30 | 삼성전기주식회사 | Yellow phosphor and white light emitting device using same |
| USD536042S1 (en) | 2005-11-10 | 2007-01-30 | Mattel, Inc. | Electronic toy house |
| USD532461S1 (en) | 2005-11-10 | 2006-11-21 | Mattel, Inc. | Electronic toy house |
| CN100511736C (en)* | 2005-11-11 | 2009-07-08 | 亿镫光电科技股份有限公司 | Light-increasing light-emitting device |
| KR101258397B1 (en)* | 2005-11-11 | 2013-04-30 | 서울반도체 주식회사 | Copper-Alkaline-Earth-Silicate mixed crystal phosphors |
| TWI291247B (en)* | 2005-11-11 | 2007-12-11 | Univ Nat Chiao Tung | Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices |
| US20070114561A1 (en)* | 2005-11-22 | 2007-05-24 | Comanzo Holly A | High efficiency phosphor for use in LEDs |
| US7939996B2 (en)* | 2005-11-24 | 2011-05-10 | Koninklijke Philips Electronics N.V. | Display device with solid state fluorescent material |
| US8116181B2 (en)* | 2005-11-28 | 2012-02-14 | Koninklijke Philips Electronics N.V. | Apparatus for and method for recording data on a rewritable optical record carrier |
| US20070128745A1 (en)* | 2005-12-01 | 2007-06-07 | Brukilacchio Thomas J | Phosphor deposition method and apparatus for making light emitting diodes |
| US20070125984A1 (en)* | 2005-12-01 | 2007-06-07 | Sarnoff Corporation | Phosphors protected against moisture and LED lighting devices |
| US8906262B2 (en) | 2005-12-02 | 2014-12-09 | Lightscape Materials, Inc. | Metal silicate halide phosphors and LED lighting devices using the same |
| CN100334185C (en)* | 2005-12-09 | 2007-08-29 | 天津理工大学 | Rare-earth yttrium-aluminium garnet luminous material and its gas-phase preparing method |
| US8465183B2 (en)* | 2005-12-14 | 2013-06-18 | Koninklijke Philips Electronics N.V. | Lighting device and method for manufacturing same |
| KR101055772B1 (en) | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | Light emitting device |
| JP2007165728A (en)* | 2005-12-15 | 2007-06-28 | Toshiba Discrete Technology Kk | Light emitting device and lighting device for visible light communication |
| JP2007165811A (en) | 2005-12-16 | 2007-06-28 | Nichia Chem Ind Ltd | Light emitting device |
| WO2007075742A2 (en) | 2005-12-21 | 2007-07-05 | Cree Led Lighting Solutions, Inc. | Lighting device |
| DE102005061204A1 (en)* | 2005-12-21 | 2007-07-05 | Perkinelmer Elcos Gmbh | Lighting device, lighting control device and lighting system |
| EP1964104A4 (en) | 2005-12-21 | 2012-01-11 | Cree Inc | Sign and method for lighting |
| EP1963740A4 (en)* | 2005-12-21 | 2009-04-29 | Cree Led Lighting Solutions | Lighting device and lighting method |
| US20070158660A1 (en)* | 2005-12-22 | 2007-07-12 | Acol Technologies S.A. | Optically active compositions and combinations of same with InGaN semiconductors |
| CN101351891B (en) | 2005-12-22 | 2014-11-19 | 科锐公司 | lighting device |
| US7474287B2 (en)* | 2005-12-23 | 2009-01-06 | Hong Kong Applied Science And Technology | Light emitting device |
| US7659544B2 (en)* | 2005-12-23 | 2010-02-09 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | Light emitting device with at least two alternately driven light emitting diodes |
| CN1988188A (en)* | 2005-12-23 | 2007-06-27 | 香港应用科技研究院有限公司 | Light-emitting diode crystal grain with fluorescent layer structure and its manufacturing method |
| EP1969284B1 (en)* | 2005-12-27 | 2012-06-13 | Showa Denko K.K. | Flat light source device and display device using the same |
| US9351355B2 (en) | 2005-12-30 | 2016-05-24 | Seoul Semiconductor Co., Ltd. | Illumination system having color temperature control and method for controlling the same |
| KR100728134B1 (en)* | 2005-12-30 | 2007-06-13 | 김재조 | Light emitting device |
| US7772604B2 (en) | 2006-01-05 | 2010-08-10 | Illumitex | Separate optical device for directing light from an LED |
| DE102006001195A1 (en) | 2006-01-10 | 2007-07-12 | Sms Demag Ag | Casting-rolling process for continuous steel casting involves coordinating roll speeds and temperatures to provide higher end temperature |
| KR100821684B1 (en)* | 2006-01-17 | 2008-04-11 | 주식회사 에스티앤아이 | White light emitting diode elements |
| CN100464233C (en)* | 2006-01-17 | 2009-02-25 | 群康科技(深圳)有限公司 | Backlight module |
| EP1980606B1 (en) | 2006-01-19 | 2017-09-06 | Ube Industries, Ltd. | Ceramic composite light converting member and light emitting device using the same |
| US8441179B2 (en) | 2006-01-20 | 2013-05-14 | Cree, Inc. | Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sources |
| US8264138B2 (en)* | 2006-01-20 | 2012-09-11 | Cree, Inc. | Shifting spectral content in solid state light emitters by spatially separating lumiphor films |
| US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
| JP2007226190A (en)* | 2006-01-30 | 2007-09-06 | Konica Minolta Holdings Inc | Video display apparatus and head-mounted display |
| DE102006005042A1 (en) | 2006-02-03 | 2007-08-09 | Tridonic Optoelectronics Gmbh | Light-emitting device with non-activated phosphor |
| RU2315135C2 (en)* | 2006-02-06 | 2008-01-20 | Владимир Семенович Абрамов | Method of growing nonpolar epitaxial heterostructures based on group iii element nitrides |
| TWI317756B (en)* | 2006-02-07 | 2009-12-01 | Coretronic Corp | Phosphor, fluorescent gel, and light emitting diode device |
| JP2009527099A (en) | 2006-02-14 | 2009-07-23 | マサチューセッツ・インスティテュート・オブ・テクノロジー | White light emitting device |
| US8451195B2 (en) | 2006-02-15 | 2013-05-28 | Prysm, Inc. | Servo-assisted scanning beam display systems using fluorescent screens |
| US7884816B2 (en) | 2006-02-15 | 2011-02-08 | Prysm, Inc. | Correcting pyramidal error of polygon scanner in scanning beam display systems |
| US20080000467A1 (en)* | 2006-02-16 | 2008-01-03 | Design Annex | Disposable charcoal lighting apparatus |
| US20070194684A1 (en)* | 2006-02-21 | 2007-08-23 | Chen Yi-Yi | Light emitting diode structure |
| KR100735453B1 (en)* | 2006-02-22 | 2007-07-04 | 삼성전기주식회사 | White light emitting device |
| JP5027427B2 (en)* | 2006-02-23 | 2012-09-19 | パナソニック株式会社 | White illumination device using light emitting diode |
| RU2302687C1 (en)* | 2006-02-26 | 2007-07-10 | Закрытое акционерное общество "ПОЛА+" | Light-emitting diode device |
| JP4992250B2 (en) | 2006-03-01 | 2012-08-08 | 日亜化学工業株式会社 | Light emitting device |
| US7737634B2 (en) | 2006-03-06 | 2010-06-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | LED devices having improved containment for liquid encapsulant |
| US9874674B2 (en) | 2006-03-07 | 2018-01-23 | Samsung Electronics Co., Ltd. | Compositions, optical component, system including an optical component, devices, and other products |
| JP2007250629A (en)* | 2006-03-14 | 2007-09-27 | Toshiba Corp | LIGHT EMITTING DEVICE, ITS MANUFACTURING METHOD, AND FLUORESCENT PATTERN FORMED PRODUCT |
| KR100746749B1 (en) | 2006-03-15 | 2007-08-09 | (주)케이디티 | Optical excitation sheet |
| US7795600B2 (en)* | 2006-03-24 | 2010-09-14 | Goldeneye, Inc. | Wavelength conversion chip for use with light emitting diodes and method for making same |
| JP5032043B2 (en)* | 2006-03-27 | 2012-09-26 | 豊田合成株式会社 | Ferrous metal alkaline earth metal silicate mixed crystal phosphor and light emitting device using the same |
| JP4980640B2 (en)* | 2006-03-31 | 2012-07-18 | 三洋電機株式会社 | Lighting device |
| KR100875443B1 (en) | 2006-03-31 | 2008-12-23 | 서울반도체 주식회사 | Light emitting device |
| US8969908B2 (en) | 2006-04-04 | 2015-03-03 | Cree, Inc. | Uniform emission LED package |
| JP5068472B2 (en)* | 2006-04-12 | 2012-11-07 | 昭和電工株式会社 | Method for manufacturing light emitting device |
| US7821194B2 (en) | 2006-04-18 | 2010-10-26 | Cree, Inc. | Solid state lighting devices including light mixtures |
| US8513875B2 (en) | 2006-04-18 | 2013-08-20 | Cree, Inc. | Lighting device and lighting method |
| US9084328B2 (en) | 2006-12-01 | 2015-07-14 | Cree, Inc. | Lighting device and lighting method |
| US7828460B2 (en)* | 2006-04-18 | 2010-11-09 | Cree, Inc. | Lighting device and lighting method |
| WO2007124036A2 (en) | 2006-04-20 | 2007-11-01 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| EP3422425B1 (en)* | 2006-04-24 | 2022-02-23 | CreeLED, Inc. | Side-view surface mount white led |
| FR2900382B1 (en)* | 2006-04-26 | 2009-02-27 | Benotec Soc Par Actions Simpli | HANDLING TROLLEY HAVING AT LEAST THREE DIRECTION WHEELS |
| US7888868B2 (en)* | 2006-04-28 | 2011-02-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | LED light source with light-directing structures |
| EP2021688B1 (en) | 2006-05-05 | 2016-04-27 | Cree, Inc. | Lighting device |
| EP2021861B1 (en) | 2006-05-05 | 2012-09-26 | Prysm, Inc. | Phosphor compositions and other fluorescent materials for display systems and devices |
| US20070262288A1 (en)* | 2006-05-09 | 2007-11-15 | Soshchin Naum | Inorganic fluorescent powder as a solid light source |
| TWI357435B (en) | 2006-05-12 | 2012-02-01 | Lextar Electronics Corp | Light emitting diode and wavelength converting mat |
| US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
| JP4188404B2 (en) | 2006-05-19 | 2008-11-26 | 三井金属鉱業株式会社 | White phosphor and white light emitting element or device |
| US7846391B2 (en) | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
| US7718991B2 (en)* | 2006-05-23 | 2010-05-18 | Cree Led Lighting Solutions, Inc. | Lighting device and method of making |
| WO2007139781A2 (en) | 2006-05-23 | 2007-12-06 | Cree Led Lighting Solutions, Inc. | Lighting device |
| US20070274093A1 (en)* | 2006-05-25 | 2007-11-29 | Honeywell International, Inc. | LED backlight system for LCD displays |
| CN101077973B (en) | 2006-05-26 | 2010-09-29 | 大连路明发光科技股份有限公司 | Silicate fluorescent material, method for producing same, and light-emitting device using same |
| JP2009538536A (en) | 2006-05-26 | 2009-11-05 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Solid state light emitting device and method of manufacturing the same |
| CN101501870B (en)* | 2006-05-31 | 2012-10-31 | 株式会社藤仓 | Substrate for mounting light-emitting element, light-emitting element module, and display device |
| WO2007142946A2 (en)* | 2006-05-31 | 2007-12-13 | Cree Led Lighting Solutions, Inc. | Lighting device and method of lighting |
| US20070280622A1 (en)* | 2006-06-02 | 2007-12-06 | 3M Innovative Properties Company | Fluorescent light source having light recycling means |
| US20070279914A1 (en)* | 2006-06-02 | 2007-12-06 | 3M Innovative Properties Company | Fluorescent volume light source with reflector |
| JP4899651B2 (en)* | 2006-06-07 | 2012-03-21 | ソニー株式会社 | Light emitting diode lighting circuit, lighting device, and liquid crystal display device |
| US20070284565A1 (en)* | 2006-06-12 | 2007-12-13 | 3M Innovative Properties Company | Led device with re-emitting semiconductor construction and optical element |
| JP2009540616A (en)* | 2006-06-12 | 2009-11-19 | スリーエム イノベイティブ プロパティズ カンパニー | LED device having re-emitting semiconductor structure and focusing optical element |
| US7952110B2 (en)* | 2006-06-12 | 2011-05-31 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and converging optical element |
| US7863634B2 (en)* | 2006-06-12 | 2011-01-04 | 3M Innovative Properties Company | LED device with re-emitting semiconductor construction and reflector |
| US7902542B2 (en) | 2006-06-14 | 2011-03-08 | 3M Innovative Properties Company | Adapted LED device with re-emitting semiconductor construction |
| CN101489951A (en)* | 2006-06-21 | 2009-07-22 | 株式会社村田制作所 | Translucent ceramic, optical component, and optical device |
| JP4282693B2 (en)* | 2006-07-04 | 2009-06-24 | 株式会社東芝 | Semiconductor light emitting device and manufacturing method thereof |
| CN100590172C (en) | 2006-07-26 | 2010-02-17 | 北京有色金属研究总院 | A silicon-containing LED phosphor, its manufacturing method, and the light-emitting device made therefrom |
| JP4520437B2 (en)* | 2006-07-26 | 2010-08-04 | 信越化学工業株式会社 | A curable silicone composition containing a fluorescent material for LED and an LED light emitting device using the composition. |
| US7804147B2 (en) | 2006-07-31 | 2010-09-28 | Cree, Inc. | Light emitting diode package element with internal meniscus for bubble free lens placement |
| US7943952B2 (en) | 2006-07-31 | 2011-05-17 | Cree, Inc. | Method of uniform phosphor chip coating and LED package fabricated using method |
| US20080029720A1 (en) | 2006-08-03 | 2008-02-07 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
| JP4957110B2 (en)* | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | Light emitting device |
| US20080029774A1 (en)* | 2006-08-04 | 2008-02-07 | Acol Technologies S.A. | Semiconductor light source packages with broadband and angular uniformity support |
| ES2391586T3 (en) | 2006-08-15 | 2012-11-28 | Dalian Luminglight Co., Ltd. | Silicate-based luminescent materials that have multiple emission peaks, procedures for their preparation and use in light emitting devices |
| US20080113877A1 (en)* | 2006-08-16 | 2008-05-15 | Intematix Corporation | Liquid solution deposition of composition gradient materials |
| TWI317562B (en)* | 2006-08-16 | 2009-11-21 | Ind Tech Res Inst | Light-emitting device |
| US7909482B2 (en) | 2006-08-21 | 2011-03-22 | Innotec Corporation | Electrical device having boardless electrical component mounting arrangement |
| US7763478B2 (en)* | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
| JP5100059B2 (en)* | 2006-08-24 | 2012-12-19 | スタンレー電気株式会社 | Phosphor, method for producing the same, and light emitting device using the same |
| KR101258227B1 (en) | 2006-08-29 | 2013-04-25 | 서울반도체 주식회사 | Light emitting device |
| US7703942B2 (en) | 2006-08-31 | 2010-04-27 | Rensselaer Polytechnic Institute | High-efficient light engines using light emitting diodes |
| US7910938B2 (en) | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
| US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
| WO2008041566A1 (en) | 2006-09-25 | 2008-04-10 | Ube Industries, Ltd. | Ceramic composite for phototransformation and light emitting device using the same |
| WO2008042703A1 (en)* | 2006-09-29 | 2008-04-10 | 3M Innovative Properties Company | Fluorescent volume light source having multiple fluorescent species |
| US20090275157A1 (en)* | 2006-10-02 | 2009-11-05 | Illumitex, Inc. | Optical device shaping |
| WO2008042351A2 (en) | 2006-10-02 | 2008-04-10 | Illumitex, Inc. | Led system and method |
| CN101605867B (en)* | 2006-10-03 | 2013-05-08 | 渲染材料公司 | Metal silicate halide phosphors and LED lighting devices using them |
| GB2442505A (en)* | 2006-10-04 | 2008-04-09 | Sharp Kk | A display with a primary light source for illuminating a nanophosphor re-emission material |
| EP2074668B1 (en)* | 2006-10-10 | 2018-02-28 | Tridonic Jennersdorf GmbH | Phosphor-converted light emitting diode |
| KR101370372B1 (en)* | 2006-10-18 | 2014-03-05 | 코닌클리케 필립스 엔.브이. | Illumination system and display device |
| US9120975B2 (en) | 2006-10-20 | 2015-09-01 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on terbium-containing aluminates |
| US8475683B2 (en) | 2006-10-20 | 2013-07-02 | Intematix Corporation | Yellow-green to yellow-emitting phosphors based on halogenated-aluminates |
| US8529791B2 (en) | 2006-10-20 | 2013-09-10 | Intematix Corporation | Green-emitting, garnet-based phosphors in general and backlighting applications |
| US8133461B2 (en) | 2006-10-20 | 2012-03-13 | Intematix Corporation | Nano-YAG:Ce phosphor compositions and their methods of preparation |
| WO2008052318A1 (en)* | 2006-10-31 | 2008-05-08 | Tir Technology Lp | Light source comprising a light-excitable medium |
| US8029155B2 (en)* | 2006-11-07 | 2011-10-04 | Cree, Inc. | Lighting device and lighting method |
| US10295147B2 (en)* | 2006-11-09 | 2019-05-21 | Cree, Inc. | LED array and method for fabricating same |
| CN101182416B (en)* | 2006-11-13 | 2010-09-22 | 北京有色金属研究总院 | Aluminate phosphor containing divalent metal element as well as manufacturing method and luminescent device |
| TWI496315B (en)* | 2006-11-13 | 2015-08-11 | Cree Inc | Lighting device, illuminated housing and lighting method |
| US7769066B2 (en) | 2006-11-15 | 2010-08-03 | Cree, Inc. | Laser diode and method for fabricating same |
| US7813400B2 (en) | 2006-11-15 | 2010-10-12 | Cree, Inc. | Group-III nitride based laser diode and method for fabricating same |
| US8045595B2 (en) | 2006-11-15 | 2011-10-25 | Cree, Inc. | Self aligned diode fabrication method and self aligned laser diode |
| US7889421B2 (en) | 2006-11-17 | 2011-02-15 | Rensselaer Polytechnic Institute | High-power white LEDs and manufacturing method thereof |
| US7521862B2 (en)* | 2006-11-20 | 2009-04-21 | Philips Lumileds Lighting Co., Llc | Light emitting device including luminescent ceramic and light-scattering material |
| US7692263B2 (en) | 2006-11-21 | 2010-04-06 | Cree, Inc. | High voltage GaN transistors |
| WO2008063657A2 (en)* | 2006-11-21 | 2008-05-29 | Qd Vision, Inc. | Light emitting devices and displays with improved performance |
| JP5367218B2 (en) | 2006-11-24 | 2013-12-11 | シャープ株式会社 | Method for manufacturing phosphor and method for manufacturing light emitting device |
| US9441793B2 (en) | 2006-12-01 | 2016-09-13 | Cree, Inc. | High efficiency lighting device including one or more solid state light emitters, and method of lighting |
| US9310026B2 (en) | 2006-12-04 | 2016-04-12 | Cree, Inc. | Lighting assembly and lighting method |
| WO2008070604A1 (en) | 2006-12-04 | 2008-06-12 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| US7918581B2 (en) | 2006-12-07 | 2011-04-05 | Cree, Inc. | Lighting device and lighting method |
| JP5028562B2 (en)* | 2006-12-11 | 2012-09-19 | 株式会社ジャパンディスプレイイースト | LIGHTING DEVICE AND DISPLAY DEVICE USING THE LIGHTING DEVICE |
| JP2010512662A (en) | 2006-12-11 | 2010-04-22 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Transparent light emitting diode |
| US8013506B2 (en) | 2006-12-12 | 2011-09-06 | Prysm, Inc. | Organic compounds for adjusting phosphor chromaticity |
| US20100001648A1 (en)* | 2006-12-12 | 2010-01-07 | Inverto Nv | Led lighting that has continuous and adjustable color temperature (ct), while maintaining a high cri |
| TWI359857B (en)* | 2006-12-25 | 2012-03-11 | Ind Tech Res Inst | White light illumination device |
| CN100543555C (en)* | 2006-12-29 | 2009-09-23 | 晶宏半导体股份有限公司 | Side light source backlight module |
| JP4660507B2 (en)* | 2007-01-03 | 2011-03-30 | 三星モバイルディスプレイ株式會社 | Flexible circuit board and liquid crystal display device having the same |
| KR100788556B1 (en)* | 2007-01-03 | 2007-12-26 | 삼성에스디아이 주식회사 | Flexible circuit board for liquid crystal display device having light absorption layer |
| KR100788557B1 (en)* | 2007-01-03 | 2007-12-26 | 삼성에스디아이 주식회사 | Flexible circuit board for liquid crystal display device having light absorption layer |
| JP2008186802A (en)* | 2007-01-04 | 2008-08-14 | Toshiba Corp | Backlight device, liquid crystal display device |
| US8836212B2 (en) | 2007-01-11 | 2014-09-16 | Qd Vision, Inc. | Light emissive printed article printed with quantum dot ink |
| US7800304B2 (en)* | 2007-01-12 | 2010-09-21 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Multi-chip packaged LED light source |
| TWI325186B (en)* | 2007-01-19 | 2010-05-21 | Harvatek Corp | Led chip package structure using ceramic material as a substrate |
| US7834367B2 (en) | 2007-01-19 | 2010-11-16 | Cree, Inc. | Low voltage diode with reduced parasitic resistance and method for fabricating |
| CN101250408B (en)* | 2007-01-22 | 2011-03-23 | 罗维鸿 | Warm-white light-emitting diode and fluorescent powder having orange radiation thereof |
| US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US8232564B2 (en) | 2007-01-22 | 2012-07-31 | Cree, Inc. | Wafer level phosphor coating technique for warm light emitting diodes |
| US9159888B2 (en) | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
| US7781783B2 (en)* | 2007-02-07 | 2010-08-24 | SemiLEDs Optoelectronics Co., Ltd. | White light LED device |
| US9061450B2 (en)* | 2007-02-12 | 2015-06-23 | Cree, Inc. | Methods of forming packaged semiconductor light emitting devices having front contacts by compression molding |
| US20080192458A1 (en)* | 2007-02-12 | 2008-08-14 | Intematix Corporation | Light emitting diode lighting system |
| US7709853B2 (en)* | 2007-02-12 | 2010-05-04 | Cree, Inc. | Packaged semiconductor light emitting devices having multiple optical elements |
| US20080197369A1 (en)* | 2007-02-20 | 2008-08-21 | Cree, Inc. | Double flip semiconductor device and method for fabrication |
| TWI560405B (en)* | 2007-02-22 | 2016-12-01 | Cree Inc | Lighting devices, methods of lighting, light filters and methods of filtering light |
| DE102007009820A1 (en)* | 2007-02-28 | 2008-09-04 | Osram Opto Semiconductors Gmbh | Optical arrangement and optical method |
| US20080218998A1 (en)* | 2007-03-08 | 2008-09-11 | Quest William J | Device having multiple light sources and methods of use |
| TWI390748B (en)* | 2007-03-09 | 2013-03-21 | Light energy of the battery efficiency film | |
| KR100818518B1 (en)* | 2007-03-14 | 2008-03-31 | 삼성전기주식회사 | LED Package |
| US7712933B2 (en) | 2007-03-19 | 2010-05-11 | Interlum, Llc | Light for vehicles |
| US8408773B2 (en) | 2007-03-19 | 2013-04-02 | Innotec Corporation | Light for vehicles |
| US7687816B2 (en)* | 2007-03-20 | 2010-03-30 | International Business Machines Corporation | Light emitting diode |
| GB2460802B (en)* | 2007-03-20 | 2012-09-05 | Prysm Inc | Delivering and displaying advertisment or other application data to display systems |
| TWI338957B (en) | 2007-03-23 | 2011-03-11 | Lite On Technology Corp | Light-emitting device with open-loop control and manufacturing method thereof |
| KR100848872B1 (en)* | 2007-03-29 | 2008-07-29 | 서울반도체 주식회사 | Light emitting device using RR |
| TWI378138B (en)* | 2007-04-02 | 2012-12-01 | Univ Nat Chiao Tung | Green-emitting phosphors and process for producing the same |
| DE102008017039A1 (en) | 2007-04-05 | 2008-10-09 | Koito Manufacturing Co., Ltd. | fluorescent |
| US7697183B2 (en) | 2007-04-06 | 2010-04-13 | Prysm, Inc. | Post-objective scanning beam systems |
| US8169454B1 (en) | 2007-04-06 | 2012-05-01 | Prysm, Inc. | Patterning a surface using pre-objective and post-objective raster scanning systems |
| US7964888B2 (en) | 2007-04-18 | 2011-06-21 | Cree, Inc. | Semiconductor light emitting device packages and methods |
| WO2008134056A1 (en)* | 2007-04-26 | 2008-11-06 | Deak-Lam Inc. | Photon energy coversion structure |
| WO2008135072A1 (en)* | 2007-05-04 | 2008-11-13 | Noctron Soparfi S.A. | Lighting device and liquid crystal screen having such a lighting device |
| US7910944B2 (en) | 2007-05-04 | 2011-03-22 | Cree, Inc. | Side mountable semiconductor light emitting device packages and panels |
| DE102007025573A1 (en)* | 2007-05-31 | 2008-12-04 | Noctron Holding S.A. | Liquid crystal display panel |
| DE102007026795A1 (en)* | 2007-05-04 | 2008-11-06 | Noctron Holding S.A. | Illuminating device for e.g. liquid crystal display, has reflection device provided on side of main surface, where device reflects light in direction to interior of guiding unit, and includes reflection substrate arranged on surface side |
| US7744243B2 (en) | 2007-05-08 | 2010-06-29 | Cree Led Lighting Solutions, Inc. | Lighting device and lighting method |
| JP2010527510A (en) | 2007-05-08 | 2010-08-12 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Lighting device and lighting method |
| KR20100022969A (en) | 2007-05-08 | 2010-03-03 | 크리 엘이디 라이팅 솔루션즈, 인크. | Lighting device and lighting method |
| US10030824B2 (en) | 2007-05-08 | 2018-07-24 | Cree, Inc. | Lighting device and lighting method |
| US7781779B2 (en)* | 2007-05-08 | 2010-08-24 | Luminus Devices, Inc. | Light emitting devices including wavelength converting material |
| EP2156090B1 (en) | 2007-05-08 | 2016-07-06 | Cree, Inc. | Lighting device and lighting method |
| TWI349694B (en)* | 2007-05-14 | 2011-10-01 | Univ Nat Chiao Tung | A novel phosphor for white light-emitting diodes and fabrication of the same |
| CN101688979B (en) | 2007-05-17 | 2011-02-09 | Prysm公司 | Multilayer screen with luminous strips for scanning beam display systems |
| WO2008146290A2 (en)* | 2007-05-29 | 2008-12-04 | Oree, Advanced Illumination Solutions Inc. | Method and device for providing circumferential illumination |
| KR100886785B1 (en)* | 2007-06-04 | 2009-03-04 | 박기운 | Light emitting device, manufacturing method thereof and white light emitting diode |
| US7999283B2 (en) | 2007-06-14 | 2011-08-16 | Cree, Inc. | Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes |
| US7942556B2 (en)* | 2007-06-18 | 2011-05-17 | Xicato, Inc. | Solid state illumination device |
| US8767215B2 (en) | 2007-06-18 | 2014-07-01 | Leddartech Inc. | Method for detecting objects with light |
| US8319949B2 (en)* | 2007-06-18 | 2012-11-27 | Leddartech Inc. | Method for detecting objects with visible light |
| DE102007028120A1 (en) | 2007-06-19 | 2008-12-24 | Osram Gesellschaft mit beschränkter Haftung | Chlorosilicate phosphor production, involves providing mixture of raw material of basic lattice calcium carbonate, magnesium oxide, silicon oxide and raw material of dopant europium oxide |
| JP4925119B2 (en)* | 2007-06-21 | 2012-04-25 | シャープ株式会社 | Oxide phosphor and light emitting device |
| US7878657B2 (en) | 2007-06-27 | 2011-02-01 | Prysm, Inc. | Servo feedback control based on invisible scanning servo beam in scanning beam display systems with light-emitting screens |
| US8556430B2 (en) | 2007-06-27 | 2013-10-15 | Prysm, Inc. | Servo feedback control based on designated scanning servo beam in scanning beam display systems with light-emitting screens |
| TWI365546B (en)* | 2007-06-29 | 2012-06-01 | Ind Tech Res Inst | Light emitting diode device and fabrication method thereof |
| US8084942B2 (en) | 2007-07-09 | 2011-12-27 | Sharp Kabushiki Kaisha | Phosphor particle group and light emitting apparatus using the same |
| US7852523B2 (en)* | 2007-07-11 | 2010-12-14 | Samsung Electronics Co., Ltd. | Scanner module and image scanning apparatus employing the same |
| US7924478B2 (en)* | 2007-07-11 | 2011-04-12 | Samsung Electronics Co., Ltd. | Scanner module and image scanning apparatus employing the same |
| US10505083B2 (en)* | 2007-07-11 | 2019-12-10 | Cree, Inc. | Coating method utilizing phosphor containment structure and devices fabricated using same |
| KR101279034B1 (en)* | 2007-07-11 | 2013-07-02 | 삼성전자주식회사 | Scanner module and image scanning apparatus |
| EP2015614B1 (en) | 2007-07-12 | 2010-12-15 | Koito Manufacturing Co., Ltd. | Light emitting device |
| US7847309B2 (en)* | 2007-07-16 | 2010-12-07 | GE Lighting Solutions, LLC | Red line emitting complex fluoride phosphors activated with Mn4+ |
| WO2009012287A1 (en) | 2007-07-17 | 2009-01-22 | Cree Led Lighting Solutions, Inc. | Optical elements with internal optical features and methods of fabricating same |
| WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
| TWI384052B (en)* | 2007-07-25 | 2013-02-01 | Univ Nat Chiao Tung | A novel phosphor and fabrication of the same |
| TWI363085B (en) | 2007-07-26 | 2012-05-01 | Univ Nat Chiao Tung | A novel phosphor and fabrication of the same |
| DE102007036226A1 (en)* | 2007-08-02 | 2009-02-05 | Perkinelmer Elcos Gmbh | LED mounting structure, LED assembly, LED assembly socket, method of forming a mounting structure |
| US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
| US7863635B2 (en) | 2007-08-07 | 2011-01-04 | Cree, Inc. | Semiconductor light emitting devices with applied wavelength conversion materials |
| US7652301B2 (en)* | 2007-08-16 | 2010-01-26 | Philips Lumileds Lighting Company, Llc | Optical element coupled to low profile side emitting LED |
| RU2467051C2 (en) | 2007-08-22 | 2012-11-20 | Сеул Семикондактор Ко., Лтд. | Luminophores based on nonstoichiometric tetragonal silicates of copper and alkali-earth metal and method for production thereof |
| US8704265B2 (en)* | 2007-08-27 | 2014-04-22 | Lg Electronics Inc. | Light emitting device package and lighting apparatus using the same |
| KR101055769B1 (en) | 2007-08-28 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device adopting non-stoichiometric tetra-alkaline earth silicate phosphor |
| US8128249B2 (en) | 2007-08-28 | 2012-03-06 | Qd Vision, Inc. | Apparatus for selectively backlighting a material |
| US7791093B2 (en)* | 2007-09-04 | 2010-09-07 | Koninklijke Philips Electronics N.V. | LED with particles in encapsulant for increased light extraction and non-yellow off-state color |
| US7851990B2 (en)* | 2007-09-06 | 2010-12-14 | He Shan Lide Electronic Enterprise Company Ltd. | Method for generating low color temperature light and light emitting device adopting the same |
| US8866185B2 (en)* | 2007-09-06 | 2014-10-21 | SemiLEDs Optoelectronics Co., Ltd. | White light LED with multiple encapsulation layers |
| US7955868B2 (en) | 2007-09-10 | 2011-06-07 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US8018315B2 (en) | 2007-09-10 | 2011-09-13 | Enpirion, Inc. | Power converter employing a micromagnetic device |
| US8133529B2 (en) | 2007-09-10 | 2012-03-13 | Enpirion, Inc. | Method of forming a micromagnetic device |
| US7920042B2 (en) | 2007-09-10 | 2011-04-05 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
| DE102007049005A1 (en)* | 2007-09-11 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Radiating device, especially a light-emitting diode, has a layer emitting primary radiation and a conversion layer comprising two materials which convert this radiation into first and second secondary radiation |
| DE202007019100U1 (en) | 2007-09-12 | 2010-09-02 | Lumitech Produktion Und Entwicklung Gmbh | LED module, LED bulb and LED light for energy-efficient reproduction of white light |
| US8519437B2 (en) | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
| DE102007053286B4 (en) | 2007-09-20 | 2025-03-27 | Osram Oled Gmbh | Method for producing an optoelectronic component |
| JP5075552B2 (en)* | 2007-09-25 | 2012-11-21 | 株式会社東芝 | Phosphor and LED lamp using the same |
| KR100891020B1 (en)* | 2007-09-28 | 2009-03-31 | 한국과학기술원 | Yellow luminescent Ce3 + regenerated calcium silicate yellow phosphor with new composition and method for producing same |
| US20090117672A1 (en)* | 2007-10-01 | 2009-05-07 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of fabrication thereof |
| US8883528B2 (en)* | 2007-10-01 | 2014-11-11 | Intematix Corporation | Methods of producing light emitting device with phosphor wavelength conversion |
| US11317495B2 (en) | 2007-10-06 | 2022-04-26 | Lynk Labs, Inc. | LED circuits and assemblies |
| US11297705B2 (en) | 2007-10-06 | 2022-04-05 | Lynk Labs, Inc. | Multi-voltage and multi-brightness LED lighting devices and methods of using same |
| JP2011501417A (en)* | 2007-10-10 | 2011-01-06 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | Lighting device and manufacturing method |
| US9012937B2 (en)* | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
| CN100546058C (en)* | 2007-10-15 | 2009-09-30 | 佛山市国星光电股份有限公司 | Power luminous diode packaging structure |
| US7915627B2 (en) | 2007-10-17 | 2011-03-29 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
| US7984999B2 (en) | 2007-10-17 | 2011-07-26 | Xicato, Inc. | Illumination device with light emitting diodes and moveable light adjustment member |
| US9086213B2 (en) | 2007-10-17 | 2015-07-21 | Xicato, Inc. | Illumination device with light emitting diodes |
| KR101294849B1 (en)* | 2007-10-23 | 2013-08-08 | 엘지디스플레이 주식회사 | Backlight assemlby |
| US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
| US8018139B2 (en)* | 2007-11-05 | 2011-09-13 | Enertron, Inc. | Light source and method of controlling light spectrum of an LED light engine |
| US8119028B2 (en)* | 2007-11-14 | 2012-02-21 | Cree, Inc. | Cerium and europium doped single crystal phosphors |
| TWI334047B (en)* | 2007-11-22 | 2010-12-01 | Au Optronics Corp | Liquid crystal display |
| DE102007056562A1 (en) | 2007-11-23 | 2009-05-28 | Oerlikon Textile Gmbh & Co. Kg | Device for the optical detection of contaminants in longitudinally moved yarn |
| JP5558665B2 (en)* | 2007-11-27 | 2014-07-23 | パナソニック株式会社 | Light emitting device |
| JP2009130301A (en)* | 2007-11-27 | 2009-06-11 | Sharp Corp | Light emitting device and method for manufacturing light emitting device |
| KR100998233B1 (en) | 2007-12-03 | 2010-12-07 | 서울반도체 주식회사 | Slim LED Package |
| CN101453804B (en)* | 2007-12-05 | 2010-04-07 | 亿镫光电科技股份有限公司 | white light emitting device |
| TWI336015B (en)* | 2007-12-06 | 2011-01-11 | Au Optronics Corp | Liquid crystal display |
| US8487330B2 (en) | 2007-12-07 | 2013-07-16 | Kabushiki Kaisha Toshiba | Phosphor and LED light-emitting device using the same |
| WO2009076579A2 (en) | 2007-12-12 | 2009-06-18 | Innotec Corporation | Overmolded circuit board and method |
| US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
| US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US8167674B2 (en) | 2007-12-14 | 2012-05-01 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
| US7907804B2 (en)* | 2007-12-19 | 2011-03-15 | Oree, Inc. | Elimination of stitch artifacts in a planar illumination area |
| US20090159915A1 (en)* | 2007-12-19 | 2009-06-25 | Shaul Branchevsky | Led insert module and multi-layer lens |
| US8182128B2 (en)* | 2007-12-19 | 2012-05-22 | Oree, Inc. | Planar white illumination apparatus |
| US8118447B2 (en) | 2007-12-20 | 2012-02-21 | Altair Engineering, Inc. | LED lighting apparatus with swivel connection |
| JP5003464B2 (en)* | 2007-12-21 | 2012-08-15 | 三菱電機株式会社 | Optical transmission module |
| JP2009153712A (en) | 2007-12-26 | 2009-07-16 | Olympus Corp | Light source device and endoscope apparatus comprising the same |
| US7815339B2 (en) | 2008-01-09 | 2010-10-19 | Innotec Corporation | Light module |
| US8878219B2 (en) | 2008-01-11 | 2014-11-04 | Cree, Inc. | Flip-chip phosphor coating method and devices fabricated utilizing method |
| CN101482247A (en)* | 2008-01-11 | 2009-07-15 | 富士迈半导体精密工业（上海）有限公司 | Illuminating apparatus |
| US8940561B2 (en)* | 2008-01-15 | 2015-01-27 | Cree, Inc. | Systems and methods for application of optical materials to optical elements |
| US8058088B2 (en)* | 2008-01-15 | 2011-11-15 | Cree, Inc. | Phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating |
| US20090309114A1 (en) | 2008-01-16 | 2009-12-17 | Luminus Devices, Inc. | Wavelength converting light-emitting devices and methods of making the same |
| US8337029B2 (en)* | 2008-01-17 | 2012-12-25 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
| US20090185113A1 (en)* | 2008-01-22 | 2009-07-23 | Industrial Technology Research Institute | Color Filter Module and Device of Having the Same |
| CN101493216B (en)* | 2008-01-24 | 2011-11-09 | 富士迈半导体精密工业（上海）有限公司 | LED light source module |
| US9151884B2 (en)* | 2008-02-01 | 2015-10-06 | 3M Innovative Properties Company | Fluorescent volume light source with active chromphore |
| JP2011512037A (en) | 2008-02-08 | 2011-04-14 | イルミテックス， インコーポレイテッド | System and method for emitter layer shaping |
| CN101946336B (en) | 2008-02-18 | 2012-06-27 | 株式会社小糸制作所 | White light-emitting device and vehicle lamp using the white light-emitting device |
| WO2009105581A1 (en)* | 2008-02-21 | 2009-08-27 | Nitto Denko Corporation | Light emitting device with translucent ceramic plate |
| US8651723B2 (en)* | 2008-02-21 | 2014-02-18 | Koninklijke Philips N.V. | LED light source with a luminescent layer |
| CN101514801A (en)* | 2008-02-22 | 2009-08-26 | 富士迈半导体精密工业（上海）有限公司 | Lighting device |
| US8163203B2 (en) | 2008-02-27 | 2012-04-24 | The Regents Of The University Of California | Yellow emitting phosphors based on Ce3+-doped aluminate and via solid solution for solid-state lighting applications |
| JP2009206459A (en)* | 2008-02-29 | 2009-09-10 | Sharp Corp | Color conversion member and light-emitting apparatus using the same |
| US20090225566A1 (en)* | 2008-03-05 | 2009-09-10 | Micha Zimmermann | Illumination apparatus and methods of forming the same |
| US8637883B2 (en) | 2008-03-19 | 2014-01-28 | Cree, Inc. | Low index spacer layer in LED devices |
| TWI521266B (en)* | 2008-04-03 | 2016-02-11 | 友達光電股份有限公司 | Liquid crystal display |
| KR20110008206A (en) | 2008-04-03 | 2011-01-26 | 큐디 비젼, 인크. | Light Emitting Device Including Quantum Dots |
| US9525148B2 (en) | 2008-04-03 | 2016-12-20 | Qd Vision, Inc. | Device including quantum dots |
| US8541991B2 (en) | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US9246390B2 (en) | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8686698B2 (en) | 2008-04-16 | 2014-04-01 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| US8692532B2 (en) | 2008-04-16 | 2014-04-08 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
| RU2010147654A (en)* | 2008-04-23 | 2012-05-27 | Конинклейке Филипс Электроникс Н.В. (Nl) | LIGHT DEVICE |
| DE102009018603B9 (en) | 2008-04-25 | 2021-01-14 | Samsung Electronics Co., Ltd. | Lighting device and manufacturing method thereof |
| US20090268461A1 (en)* | 2008-04-28 | 2009-10-29 | Deak David G | Photon energy conversion structure |
| DE102008021438A1 (en) | 2008-04-29 | 2009-12-31 | Schott Ag | Conversion material in particular for a, a semiconductor light source comprising white or colored light source, method for its preparation and this conversion material comprising light source |
| DE102008021658A1 (en) | 2008-04-30 | 2009-11-05 | Ledon Lighting Jennersdorf Gmbh | Light emitting device for e.g. traffic signal application, has LED, and partially transparent material e.g. silicon and organic polymer e.g. polymethyl methacrylate or polyimide, surrounding LED in direction of light emitted by LED |
| DE202008005987U1 (en)* | 2008-04-30 | 2009-09-03 | Ledon Lighting Jennersdorf Gmbh | LED module with dome-shaped color conversion layer |
| US9287469B2 (en) | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
| WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
| US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
| WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
| DE102008022888A1 (en)* | 2008-05-08 | 2009-11-19 | Lok-F Gmbh | Lighting device comprising a light source surrounded by solid particles comprises a particle number density gradient in at least one direction away from the light source |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
| JP2009277887A (en)* | 2008-05-15 | 2009-11-26 | Shin Etsu Chem Co Ltd | Light-emitting device |
| US20100176751A1 (en)* | 2008-05-20 | 2010-07-15 | Panasonic Corporation | Semiconductor light-emitting device as well as light source device and lighting system including the same |
| US8242525B2 (en)* | 2008-05-20 | 2012-08-14 | Lightscape Materials, Inc. | Silicate-based phosphors and LED lighting devices using the same |
| US8360599B2 (en) | 2008-05-23 | 2013-01-29 | Ilumisys, Inc. | Electric shock resistant L.E.D. based light |
| US8461613B2 (en) | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
| DE102008025318A1 (en)* | 2008-05-27 | 2009-12-10 | Setrinx S.A.R.L. | Luminescent chip and lighting device with such |
| US8871024B2 (en)* | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US20090301388A1 (en)* | 2008-06-05 | 2009-12-10 | Soraa Inc. | Capsule for high pressure processing and method of use for supercritical fluids |
| US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
| US7906766B2 (en)* | 2008-06-16 | 2011-03-15 | Northrop Grumman Systems Corporation | Systems and methods for simulating a vehicle exhaust plume |
| US8487524B2 (en)* | 2008-06-25 | 2013-07-16 | Mario W. Cardullo | UV generated visible light source |
| US8240875B2 (en) | 2008-06-25 | 2012-08-14 | Cree, Inc. | Solid state linear array modules for general illumination |
| KR101448153B1 (en)* | 2008-06-25 | 2014-10-08 | 삼성전자주식회사 | A multi-chip package for a light-emitting diode and a light-emitting diode |
| US20090321758A1 (en)* | 2008-06-25 | 2009-12-31 | Wen-Huang Liu | Led with improved external light extraction efficiency |
| US20090320745A1 (en)* | 2008-06-25 | 2009-12-31 | Soraa, Inc. | Heater device and method for high pressure processing of crystalline materials |
| WO2010005914A1 (en)* | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
| US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
| US8301002B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
| US8297786B2 (en) | 2008-07-10 | 2012-10-30 | Oree, Inc. | Slim waveguide coupling apparatus and method |
| JP2010027704A (en)* | 2008-07-16 | 2010-02-04 | Stanley Electric Co Ltd | Production method of light-emitting device using phosphor ceramic board |
| TW201005075A (en)* | 2008-07-24 | 2010-02-01 | Univ Nat Chiao Tung | White-emitting phosphors and lighting apparatus thereof |
| US7869112B2 (en)* | 2008-07-25 | 2011-01-11 | Prysm, Inc. | Beam scanning based on two-dimensional polygon scanner for display and other applications |
| US7946729B2 (en) | 2008-07-31 | 2011-05-24 | Altair Engineering, Inc. | Fluorescent tube replacement having longitudinally oriented LEDs |
| US8979999B2 (en)* | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
| US8430958B2 (en)* | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
| US20100033077A1 (en)* | 2008-08-08 | 2010-02-11 | Glory Science Co., Ltd. | Light emitting device and method of manufacturing the light emitting device |
| DE102008038249A1 (en) | 2008-08-18 | 2010-02-25 | Osram Gesellschaft mit beschränkter Haftung | alpha-sialon phosphor |
| CN101577301B (en)* | 2008-09-05 | 2011-12-21 | 佛山市国星光电股份有限公司 | Package method for white light LED and LED device manufactured by package method for white light LED |
| US20120181919A1 (en)* | 2008-08-27 | 2012-07-19 | Osram Sylvania Inc. | Luminescent Ceramic Composite Converter and Method of Making the Same |
| US8164710B2 (en)* | 2008-09-04 | 2012-04-24 | Seoul Semiconductor Co., Ltd. | Backlight assembly and liquid crystal display apparatus having the same |
| US20100060198A1 (en)* | 2008-09-05 | 2010-03-11 | Lite-On It Corporation | LED Lamp and Method for Producing a LED Lamp |
| US20100058837A1 (en)* | 2008-09-05 | 2010-03-11 | Quest William J | Device having multiple light sources and methods of use |
| US8143769B2 (en)* | 2008-09-08 | 2012-03-27 | Intematix Corporation | Light emitting diode (LED) lighting device |
| GB0816557D0 (en) | 2008-09-10 | 2008-10-15 | Merck Patent Gmbh | Electro-optical switching element and electro-optical display |
| EP2163593A1 (en) | 2008-09-15 | 2010-03-17 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Production of nitride-based phosphors |
| US8256924B2 (en) | 2008-09-15 | 2012-09-04 | Ilumisys, Inc. | LED-based light having rapidly oscillating LEDs |
| US8342712B2 (en) | 2008-09-30 | 2013-01-01 | Disney Enterprises, Inc. | Kinetic flame device |
| US9054086B2 (en) | 2008-10-02 | 2015-06-09 | Enpirion, Inc. | Module having a stacked passive element and method of forming the same |
| US8266793B2 (en) | 2008-10-02 | 2012-09-18 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8339802B2 (en) | 2008-10-02 | 2012-12-25 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
| US8153473B2 (en) | 2008-10-02 | 2012-04-10 | Empirion, Inc. | Module having a stacked passive element and method of forming the same |
| DE102008051256B4 (en)* | 2008-10-10 | 2018-05-24 | Ivoclar Vivadent Ag | Semiconductor radiation source |
| US8075165B2 (en)* | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
| US20100098377A1 (en)* | 2008-10-16 | 2010-04-22 | Noam Meir | Light confinement using diffusers |
| US9166112B2 (en) | 2008-10-17 | 2015-10-20 | Koito Manufacturing Co., Ltd. | Light emitting module, method of manufacturing the light emitting module, and lamp unit |
| US8901823B2 (en) | 2008-10-24 | 2014-12-02 | Ilumisys, Inc. | Light and light sensor |
| US7938562B2 (en) | 2008-10-24 | 2011-05-10 | Altair Engineering, Inc. | Lighting including integral communication apparatus |
| US8324817B2 (en) | 2008-10-24 | 2012-12-04 | Ilumisys, Inc. | Light and light sensor |
| US8214084B2 (en) | 2008-10-24 | 2012-07-03 | Ilumisys, Inc. | Integration of LED lighting with building controls |
| US8444292B2 (en) | 2008-10-24 | 2013-05-21 | Ilumisys, Inc. | End cap substitute for LED-based tube replacement light |
| US8653984B2 (en) | 2008-10-24 | 2014-02-18 | Ilumisys, Inc. | Integration of LED lighting control with emergency notification systems |
| US8022631B2 (en)* | 2008-11-03 | 2011-09-20 | General Electric Company | Color control of light sources employing phosphors |
| US20100109025A1 (en)* | 2008-11-05 | 2010-05-06 | Koninklijke Philips Electronics N.V. | Over the mold phosphor lens for an led |
| US20100117106A1 (en)* | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
| US8405111B2 (en)* | 2008-11-13 | 2013-03-26 | National University Corporation Nagoya University | Semiconductor light-emitting device with sealing material including a phosphor |
| JP2010116522A (en)* | 2008-11-14 | 2010-05-27 | Mitsubishi Plastics Inc | Luminous film and light-emitting device |
| TWI384591B (en)* | 2008-11-17 | 2013-02-01 | Everlight Electronics Co Ltd | LED circuit board |
| US8853712B2 (en) | 2008-11-18 | 2014-10-07 | Cree, Inc. | High efficacy semiconductor light emitting devices employing remote phosphor configurations |
| US8004172B2 (en) | 2008-11-18 | 2011-08-23 | Cree, Inc. | Semiconductor light emitting apparatus including elongated hollow wavelength conversion tubes and methods of assembling same |
| US9052416B2 (en) | 2008-11-18 | 2015-06-09 | Cree, Inc. | Ultra-high efficacy semiconductor light emitting devices |
| US8220971B2 (en) | 2008-11-21 | 2012-07-17 | Xicato, Inc. | Light emitting diode module with three part color matching |
| US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
| TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
| US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
| US8878230B2 (en)* | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
| US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
| US20100147210A1 (en)* | 2008-12-12 | 2010-06-17 | Soraa, Inc. | high pressure apparatus and method for nitride crystal growth |
| US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
| US7834372B2 (en)* | 2008-12-16 | 2010-11-16 | Jinhui Zhai | High luminous flux warm white solid state lighting device |
| US8507300B2 (en)* | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
| JP2010171379A (en)* | 2008-12-25 | 2010-08-05 | Seiko Instruments Inc | Light-emitting device |
| KR101493708B1 (en)* | 2008-12-26 | 2015-02-16 | 삼성전자주식회사 | White light emitting device |
| US9548714B2 (en) | 2008-12-29 | 2017-01-17 | Altera Corporation | Power converter with a dynamically configurable controller and output filter |
| US8698463B2 (en) | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
| US8390193B2 (en) | 2008-12-31 | 2013-03-05 | Intematix Corporation | Light emitting device with phosphor wavelength conversion |
| US8556452B2 (en) | 2009-01-15 | 2013-10-15 | Ilumisys, Inc. | LED lens |
| US8362710B2 (en) | 2009-01-21 | 2013-01-29 | Ilumisys, Inc. | Direct AC-to-DC converter for passive component minimization and universal operation of LED arrays |
| US8664880B2 (en) | 2009-01-21 | 2014-03-04 | Ilumisys, Inc. | Ballast/line detection circuit for fluorescent replacement lamps |
| US20100181582A1 (en)* | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
| TWI449996B (en)* | 2009-01-23 | 2014-08-21 | Au Optronics Corp | High color saturation display and color adjusting method used thereon |
| US8242462B2 (en) | 2009-01-23 | 2012-08-14 | Lumencor, Inc. | Lighting design of high quality biomedical devices |
| JP2010171342A (en)* | 2009-01-26 | 2010-08-05 | Sony Corp | Color conversion member, method of manufacturing the same, light-emitting device, and display |
| US20110100291A1 (en)* | 2009-01-29 | 2011-05-05 | Soraa, Inc. | Plant and method for large-scale ammonothermal manufacturing of gallium nitride boules |
| JP2010177620A (en)* | 2009-02-02 | 2010-08-12 | Showa Denko Kk | Production process of light-emitting device |
| US20100195307A1 (en)* | 2009-02-04 | 2010-08-05 | Klaus Bollmann | Phosphor Composite Coated Diffuser device and method |
| US20100208469A1 (en)* | 2009-02-10 | 2010-08-19 | Yosi Shani | Illumination surfaces with reduced linear artifacts |
| KR101077264B1 (en)* | 2009-02-17 | 2011-10-27 | (주)포인트엔지니어링 | Substrate for optical device, optical device package having the same and menufacturing method thereof |
| US8137587B2 (en)* | 2009-02-19 | 2012-03-20 | Nitto Denko Corporation | Method of manufacturing phosphor translucent ceramics and light emitting devices |
| US8123981B2 (en)* | 2009-02-19 | 2012-02-28 | Nitto Denko Corporation | Method of fabricating translucent phosphor ceramics |
| EP2401343A1 (en)* | 2009-02-25 | 2012-01-04 | Koninklijke Philips Electronics N.V. | Uv-emitting discharge lamp |
| EP2405498A4 (en) | 2009-03-03 | 2013-12-04 | Ube Industries | COMPOSITE SUBSTRATE FOR LIGHT EMITTING DEVICE FORMATION, LIGHT EMITTING DEVICE DEVICE AND METHOD FOR MANUFACTURING SAME |
| US8541931B2 (en)* | 2009-03-17 | 2013-09-24 | Intematix Corporation | LED based lamp including reflective hood to reduce variation in illuminance |
| TWM374153U (en)* | 2009-03-19 | 2010-02-11 | Intematix Technology Ct Corp | Light emitting device applied to AC drive |
| TWI405838B (en)* | 2009-03-27 | 2013-08-21 | Chunghwa Picture Tubes Ltd | Red light fluorescent material, manufacturing method thereof, and white light emitting device |
| US8624527B1 (en) | 2009-03-27 | 2014-01-07 | Oree, Inc. | Independently controllable illumination device |
| KR100984126B1 (en) | 2009-03-30 | 2010-09-28 | 서울대학교산학협력단 | Method for coating light emitting device, light coupler and method for fabricating light coupler |
| TW201037059A (en)* | 2009-04-01 | 2010-10-16 | Chunghwa Picture Tubes Ltd | Red light fluorescent material and manufacturing method thereof, and white light luminescent device |
| CN102365345A (en)* | 2009-04-06 | 2012-02-29 | 夏普株式会社 | Phosphor particle group, light emitting device and liquid crystal television using same |
| CN101894901B (en) | 2009-04-08 | 2013-11-20 | 硅谷光擎 | Package for multiple light emitting diodes |
| US7985000B2 (en)* | 2009-04-08 | 2011-07-26 | Ledengin, Inc. | Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers |
| US8598793B2 (en) | 2011-05-12 | 2013-12-03 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
| EP2422230B1 (en)* | 2009-04-21 | 2019-11-27 | Signify Holding B.V. | Illumination device with a phosphor |
| US8192048B2 (en)* | 2009-04-22 | 2012-06-05 | 3M Innovative Properties Company | Lighting assemblies and systems |
| KR101004713B1 (en)* | 2009-04-22 | 2011-01-04 | 주식회사 에피밸리 | Display Dimming Control Method |
| KR101753740B1 (en) | 2009-04-28 | 2017-07-04 | 삼성전자주식회사 | Optical materials, optical components, and methods |
| DE102009020569B4 (en) | 2009-05-08 | 2019-02-21 | Schott Ag | Phosphors based on Eu2 + (co) doped yttrium aluminum garnet crystals and their use |
| US8106569B2 (en)* | 2009-05-12 | 2012-01-31 | Remphos Technologies Llc | LED retrofit for miniature bulbs |
| US20100320904A1 (en)* | 2009-05-13 | 2010-12-23 | Oree Inc. | LED-Based Replacement Lamps for Incandescent Fixtures |
| US8330381B2 (en) | 2009-05-14 | 2012-12-11 | Ilumisys, Inc. | Electronic circuit for DC conversion of fluorescent lighting ballast |
| US8227276B2 (en)* | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| US8597963B2 (en)* | 2009-05-19 | 2013-12-03 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| US8227269B2 (en)* | 2009-05-19 | 2012-07-24 | Intematix Corporation | Manufacture of light emitting devices with phosphor wavelength conversion |
| US8440500B2 (en)* | 2009-05-20 | 2013-05-14 | Interlight Optotech Corporation | Light emitting device |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| KR101800345B1 (en)* | 2009-06-01 | 2017-11-22 | 닛토덴코 가부시키가이샤 | Luminescent ceramic and light-emitting device using the same |
| WO2010141235A1 (en)* | 2009-06-01 | 2010-12-09 | Nitto Denko Corporation | Light-emitting divice comprising a dome-shaped ceramic phosphor |
| US8299695B2 (en) | 2009-06-02 | 2012-10-30 | Ilumisys, Inc. | Screw-in LED bulb comprising a base having outwardly projecting nodes |
| US8921876B2 (en) | 2009-06-02 | 2014-12-30 | Cree, Inc. | Lighting devices with discrete lumiphor-bearing regions within or on a surface of remote elements |
| US8344611B2 (en) | 2009-06-16 | 2013-01-01 | The Regents Of The University Of California | Oxyfluoride phosphors and white light emitting diodes including the oxyfluoride phosphor for solid-state lighting applications |
| US8651692B2 (en)* | 2009-06-18 | 2014-02-18 | Intematix Corporation | LED based lamp and light emitting signage |
| US8426871B2 (en)* | 2009-06-19 | 2013-04-23 | Honeywell International Inc. | Phosphor converting IR LEDs |
| EP2446715A4 (en) | 2009-06-23 | 2013-09-11 | Ilumisys Inc | LIGHTING DEVICE WITH LEDS AND SWITCHING CURRENT CONTROL SYSTEM |
| DE102009030205A1 (en)* | 2009-06-24 | 2010-12-30 | Litec-Lp Gmbh | Phosphors with Eu (II) -doped silicate luminophores |
| KR101055762B1 (en)* | 2009-09-01 | 2011-08-11 | 서울반도체 주식회사 | Light-emitting device employing a light-emitting material having an oxyosilicate light emitter |
| WO2010150202A2 (en) | 2009-06-24 | 2010-12-29 | Oree, Advanced Illumination Solutions Inc. | Illumination apparatus with high conversion efficiency and methods of forming the same |
| US8384114B2 (en) | 2009-06-27 | 2013-02-26 | Cooledge Lighting Inc. | High efficiency LEDs and LED lamps |
| US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
| CN102473803B (en) | 2009-07-28 | 2014-09-10 | A·V·维什尼科夫 | Phosphors for Solid White Light Sources |
| JP5444919B2 (en)* | 2009-07-29 | 2014-03-19 | ソニー株式会社 | Illumination device and liquid crystal display device |
| DE102009035100A1 (en)* | 2009-07-29 | 2011-02-03 | Osram Opto Semiconductors Gmbh | Light-emitting diode and conversion element for a light-emitting diode |
| JP2009260390A (en)* | 2009-08-05 | 2009-11-05 | Osram-Melco Ltd | Variable color light-emitting diode element |
| KR101172143B1 (en)* | 2009-08-10 | 2012-08-07 | 엘지이노텍 주식회사 | OXYNITRIDE-BASED PHOSPHORS COMPOSING OF SiON ELEMENT FOR WHITE LEDs, MANUFACTURING METHOD THEREOF AND LEDs USING THE SAME |
| DE102009037186A1 (en) | 2009-08-12 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component |
| US8197105B2 (en)* | 2009-08-13 | 2012-06-12 | Intematix Corporation | LED-based lamps |
| CN102598313B (en) | 2009-08-14 | 2016-03-23 | Qd视光有限公司 | Light emitting device, optical element for light emitting device, and method |
| US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
| US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
| JP5406639B2 (en)* | 2009-08-31 | 2014-02-05 | カシオ計算機株式会社 | Light source device and projector |
| JP5406638B2 (en)* | 2009-08-31 | 2014-02-05 | カシオ計算機株式会社 | Light source device and projector |
| US9909058B2 (en)* | 2009-09-02 | 2018-03-06 | Lg Innotek Co., Ltd. | Phosphor, phosphor manufacturing method, and white light emitting device |
| KR101163902B1 (en) | 2010-08-10 | 2012-07-09 | 엘지이노텍 주식회사 | Light emitting device |
| USD608938S1 (en) | 2009-09-03 | 2010-01-26 | Osram Sylvania Inc. | Lamp base with translucent light guide |
| TWI385782B (en)* | 2009-09-10 | 2013-02-11 | Lextar Electronics Corp | White light emitting element |
| CN102630288B (en) | 2009-09-25 | 2015-09-09 | 科锐公司 | Lighting fixtures with low glare and high brightness level uniformity |
| US7977641B2 (en)* | 2009-09-29 | 2011-07-12 | General Electric Company | Scintillator, associated detecting device and method |
| US8593040B2 (en) | 2009-10-02 | 2013-11-26 | Ge Lighting Solutions Llc | LED lamp with surface area enhancing fins |
| US9175418B2 (en) | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| TWI403005B (en)* | 2009-10-12 | 2013-07-21 | Intematix Technology Ct Corp | Light-emitting diode and manufacturing method thereof |
| DE102009049056A1 (en) | 2009-10-12 | 2011-04-14 | Osram Gesellschaft mit beschränkter Haftung | Process for coating a silicate phosphor |
| US8089086B2 (en)* | 2009-10-19 | 2012-01-03 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light source |
| US20110090669A1 (en)* | 2009-10-20 | 2011-04-21 | Tsung-Ting Sun | Led lighting device and light source module for the same |
| US8440104B2 (en)* | 2009-10-21 | 2013-05-14 | General Electric Company | Kimzeyite garnet phosphors |
| CN101760197B (en)* | 2009-10-27 | 2013-08-07 | 上海祥羚光电科技发展有限公司 | Yellow fluorescent powder used by white light LED and preparation method thereof |
| US9435493B2 (en) | 2009-10-27 | 2016-09-06 | Cree, Inc. | Hybrid reflector system for lighting device |
| JP2013509483A (en) | 2009-10-30 | 2013-03-14 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Solid solution phosphors based on oxyfluorides and white light emitting diodes containing phosphors for solid white light applications |
| WO2011060180A1 (en) | 2009-11-11 | 2011-05-19 | Qd Vision, Inc. | Device including quantum dots |
| KR101020998B1 (en)* | 2009-11-12 | 2011-03-09 | 엘지이노텍 주식회사 | Light emitting device and manufacturing method |
| JP4888853B2 (en)* | 2009-11-12 | 2012-02-29 | 学校法人慶應義塾 | Method for improving visibility of liquid crystal display device, and liquid crystal display device using the same |
| US8963178B2 (en) | 2009-11-13 | 2015-02-24 | Seoul Viosys Co., Ltd. | Light emitting diode chip having distributed bragg reflector and method of fabricating the same |
| TWI531088B (en)* | 2009-11-13 | 2016-04-21 | 首爾偉傲世有限公司 | LED array with distributed Bragg reflector |
| US8779685B2 (en) | 2009-11-19 | 2014-07-15 | Intematix Corporation | High CRI white light emitting devices and drive circuitry |
| US20120236213A1 (en)* | 2009-12-08 | 2012-09-20 | Sharp Kabushiki Kaisha | Lighting device, display device and television receiver |
| JP5565793B2 (en)* | 2009-12-08 | 2014-08-06 | 学校法人立命館 | Deep ultraviolet light emitting device and manufacturing method thereof |
| US8466611B2 (en) | 2009-12-14 | 2013-06-18 | Cree, Inc. | Lighting device with shaped remote phosphor |
| JP5707697B2 (en) | 2009-12-17 | 2015-04-30 | 日亜化学工業株式会社 | Light emitting device |
| US8303141B2 (en)* | 2009-12-17 | 2012-11-06 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
| CN101847680A (en)* | 2009-12-21 | 2010-09-29 | 深圳市成光兴实业发展有限公司 | White light LED fluorescent powder film layer adopting screen printing process and manufacture method |
| KR101646255B1 (en)* | 2009-12-22 | 2016-08-05 | 엘지이노텍 주식회사 | Light emitting device, light emitting device package and method for fabricating the light emitting device |
| CN101760196B (en)* | 2009-12-29 | 2012-11-21 | 四川大学 | Method for combining yellow fluorescent powder used for white light LED |
| KR20110076447A (en) | 2009-12-29 | 2011-07-06 | 삼성전자주식회사 | Light emitting device and display device including same |
| CN101797698B (en)* | 2009-12-30 | 2012-01-18 | 马勒三环气门驱动(湖北)有限公司 | Method for controlling axial dimension of valve |
| US9480133B2 (en) | 2010-01-04 | 2016-10-25 | Cooledge Lighting Inc. | Light-emitting element repair in array-based lighting devices |
| US8653539B2 (en) | 2010-01-04 | 2014-02-18 | Cooledge Lighting, Inc. | Failure mitigation in arrays of light-emitting devices |
| KR101378813B1 (en) | 2010-01-08 | 2014-03-27 | 샤프 가부시키가이샤 | Phosphor, Light Emitting Apparatus, and Liquid Crystal Display Apparatus Using the Same |
| CN102782089B (en)* | 2010-02-04 | 2015-07-22 | 日东电工株式会社 | Luminescent ceramic laminate and manufacturing method thereof |
| US9631782B2 (en)* | 2010-02-04 | 2017-04-25 | Xicato, Inc. | LED-based rectangular illumination device |
| JPWO2011096171A1 (en)* | 2010-02-08 | 2013-06-10 | パナソニック株式会社 | Light emitting device and surface light source device using the same |
| KR20110094996A (en)* | 2010-02-18 | 2011-08-24 | 엘지이노텍 주식회사 | Light emitting device package, manufacturing method and lighting system |
| US8545721B2 (en) | 2010-02-24 | 2013-10-01 | Hyun-seop Shim | UV coating composition for LED color conversion |
| GB2478287A (en) | 2010-03-01 | 2011-09-07 | Merck Patent Gmbh | Electro-optical switching element and electro-optical display |
| US8716038B2 (en)* | 2010-03-02 | 2014-05-06 | Micron Technology, Inc. | Microelectronic workpiece processing systems and associated methods of color correction |
| US8562161B2 (en) | 2010-03-03 | 2013-10-22 | Cree, Inc. | LED based pedestal-type lighting structure |
| US9275979B2 (en) | 2010-03-03 | 2016-03-01 | Cree, Inc. | Enhanced color rendering index emitter through phosphor separation |
| US8632196B2 (en) | 2010-03-03 | 2014-01-21 | Cree, Inc. | LED lamp incorporating remote phosphor and diffuser with heat dissipation features |
| JP5769290B2 (en)* | 2010-03-03 | 2015-08-26 | 国立研究開発法人産業技術総合研究所 | Lighting device |
| US8104908B2 (en) | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
| US20110220920A1 (en)* | 2010-03-09 | 2011-09-15 | Brian Thomas Collins | Methods of forming warm white light emitting devices having high color rendering index values and related light emitting devices |
| BR112012022991A8 (en)* | 2010-03-16 | 2018-04-03 | Koninklijke Philips Electronics Nv | LIGHTING APPARATUS, MANUFACTURING METHOD FOR MANUFACTURING A LIGHTING APPLIANCE AND LIGHTING METHOD |
| US8324798B2 (en)* | 2010-03-19 | 2012-12-04 | Nitto Denko Corporation | Light emitting device using orange-red phosphor with co-dopants |
| WO2011115820A1 (en) | 2010-03-19 | 2011-09-22 | Nitto Denko Corporation | Garnet-based phosphor ceramic sheets for light emitting device |
| KR101666442B1 (en)* | 2010-03-25 | 2016-10-17 | 엘지이노텍 주식회사 | Light emitting diode and Light emitting device comprising the same |
| CA2794512A1 (en) | 2010-03-26 | 2011-09-29 | David L. Simon | Led light tube with dual sided light distribution |
| CA2792940A1 (en) | 2010-03-26 | 2011-09-19 | Ilumisys, Inc. | Led light with thermoelectric generator |
| US8540401B2 (en) | 2010-03-26 | 2013-09-24 | Ilumisys, Inc. | LED bulb with internal heat dissipating structures |
| JP2011249316A (en)* | 2010-03-30 | 2011-12-08 | Mitsubishi Chemicals Corp | Light emitting device |
| US8322884B2 (en) | 2010-03-31 | 2012-12-04 | Abl Ip Holding Llc | Solid state lighting with selective matching of index of refraction |
| CN102947417B (en) | 2010-03-31 | 2015-02-25 | 宇部兴产株式会社 | Ceramic composites for light conversion, process for production thereof, and light-emitting devices provided with same |
| EP2553049B1 (en) | 2010-03-31 | 2017-03-22 | Osram Sylvania Inc. | Phosphor and leds containing same |
| US9080729B2 (en) | 2010-04-08 | 2015-07-14 | Ledengin, Inc. | Multiple-LED emitter for A-19 lamps |
| US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
| US9345095B2 (en) | 2010-04-08 | 2016-05-17 | Ledengin, Inc. | Tunable multi-LED emitter module |
| US8395312B2 (en)* | 2010-04-19 | 2013-03-12 | Bridgelux, Inc. | Phosphor converted light source having an additional LED to provide long wavelength light |
| TWI394827B (en)* | 2010-04-20 | 2013-05-01 | China Glaze Co Ltd | Fluorescent material and white light emitting device |
| TWI374179B (en)* | 2010-05-07 | 2012-10-11 | Chi Mei Corp | Fluorescent substance and light-emitting device |
| CN102473821B (en) | 2010-05-14 | 2013-05-29 | 松下电器产业株式会社 | LED modules, LED lamps and lighting fixtures |
| JP2011242536A (en)* | 2010-05-17 | 2011-12-01 | Canon Inc | Display device |
| KR20130083388A (en)* | 2010-05-20 | 2013-07-22 | 다리엔 루밍라이트 컴퍼니 리미티드 | A peelable light conversion luminescent film |
| US8684559B2 (en) | 2010-06-04 | 2014-04-01 | Cree, Inc. | Solid state light source emitting warm light with high CRI |
| US8596821B2 (en) | 2010-06-08 | 2013-12-03 | Cree, Inc. | LED light bulbs |
| CN102277164B (en)* | 2010-06-10 | 2013-11-06 | 奇美实业股份有限公司 | Phosphor and light emitting device |
| US8888318B2 (en) | 2010-06-11 | 2014-11-18 | Intematix Corporation | LED spotlight |
| US8807799B2 (en) | 2010-06-11 | 2014-08-19 | Intematix Corporation | LED-based lamps |
| US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
| WO2011162198A1 (en)* | 2010-06-22 | 2011-12-29 | 東洋紡績株式会社 | Liquid crystal display device, polarizing plate and polarizer protective film |
| JP5706962B2 (en) | 2010-06-24 | 2015-04-22 | ソウル バイオシス カンパニー リミテッドＳｅｏｕｌ Ｖｉｏｓｙｓ Ｃｏ．，Ｌｔｄ． | Light emitting diode |
| US9371973B2 (en) | 2010-06-28 | 2016-06-21 | Shenzhen Liown Electronics Company Ltd. | Electronic lighting device and method for manufacturing same |
| WO2012000114A1 (en) | 2010-06-29 | 2012-01-05 | Cooledge Lightning Inc. | Electronic devices with yielding substrates |
| JP2012019062A (en)* | 2010-07-08 | 2012-01-26 | Shin Etsu Chem Co Ltd | Light emitting semiconductor device, mounting board, and method for manufacturing the light emitting semiconductor device and the mounting board |
| US8454193B2 (en) | 2010-07-08 | 2013-06-04 | Ilumisys, Inc. | Independent modules for LED fluorescent light tube replacement |
| US8207663B2 (en) | 2010-07-09 | 2012-06-26 | Nitto Denko Corporation | Phosphor composition and light emitting device using the same |
| CA2803267A1 (en) | 2010-07-12 | 2012-01-19 | Ilumisys, Inc. | Circuit board mount for led light tube |
| US20130049575A1 (en)* | 2010-07-14 | 2013-02-28 | Shunsuke Fujita | Phosphor composite member, led device and method for manufacturing phosphor composite member |
| US8941135B2 (en) | 2010-07-15 | 2015-01-27 | Nitto Denko Corporation | Light emissive ceramic laminate and method of making same |
| DE102010031755A1 (en)* | 2010-07-21 | 2012-02-09 | Merck Patent Gmbh | Aluminate phosphors |
| US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
| CN102339936B (en)* | 2010-07-27 | 2015-04-29 | 展晶科技(深圳)有限公司 | Package structure for light-emitting device and method for manufacturing same |
| CN103053036B (en)* | 2010-07-28 | 2015-11-25 | 首尔伟傲世有限公司 | Light Emitting Diodes with Distributed Bragg Reflectors |
| US10451251B2 (en) | 2010-08-02 | 2019-10-22 | Ideal Industries Lighting, LLC | Solid state lamp with light directing optics and diffuser |
| KR20170124614A (en) | 2010-08-04 | 2017-11-10 | 우베 고산 가부시키가이샤 | SILICON NITRIDE POWDER FOR SILICONITRIDE PHOSPHOR, CaAlSiN3 PHOSPHOR USING SAME, Sr2Si5N8 PHOSPHOR USING SAME, (Sr, Ca)AlSiN3 PHOSPHOR USING SAME, La3Si6N11 PHOSPHOR USING SAME, AND METHODS FOR PRODUCING THE PHOSPHORS |
| CN102376860A (en) | 2010-08-05 | 2012-03-14 | 夏普株式会社 | Light emitting apparatus and method for manufacturing thereof |
| US8946998B2 (en) | 2010-08-09 | 2015-02-03 | Intematix Corporation | LED-based light emitting systems and devices with color compensation |
| US8852455B2 (en) | 2010-08-17 | 2014-10-07 | Intematix Corporation | Europium-activated, beta-SiAlON based green phosphors |
| US9562671B2 (en) | 2010-08-20 | 2017-02-07 | Research Triangle Institute | Color-tunable lighting devices and methods of use |
| WO2012024607A2 (en) | 2010-08-20 | 2012-02-23 | Research Triangle Institute, International | Lighting devices utilizing optical waveguides and remote light converters, and related methods |
| US9101036B2 (en) | 2010-08-20 | 2015-08-04 | Research Triangle Institute | Photoluminescent nanofiber composites, methods for fabrication, and related lighting devices |
| US20120051045A1 (en) | 2010-08-27 | 2012-03-01 | Xicato, Inc. | Led Based Illumination Module Color Matched To An Arbitrary Light Source |
| EP2426186B1 (en) | 2010-09-03 | 2016-03-23 | Stcube, Inc. | Led light converting resin composition and led member using the same |
| TWI486254B (en) | 2010-09-20 | 2015-06-01 | Nitto Denko Corp | Luminous ceramic laminate and manufacturing method thereof |
| DE102010041236A1 (en) | 2010-09-23 | 2012-03-29 | Osram Ag | Optoelectronic semiconductor component |
| US8354784B2 (en) | 2010-09-28 | 2013-01-15 | Intematix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US8610341B2 (en) | 2010-10-05 | 2013-12-17 | Intematix Corporation | Wavelength conversion component |
| US8614539B2 (en) | 2010-10-05 | 2013-12-24 | Intematix Corporation | Wavelength conversion component with scattering particles |
| CN103155024B (en) | 2010-10-05 | 2016-09-14 | 英特曼帝克司公司 | Solid state light emitting device and signage with photoluminescence wavelength conversion |
| US8604678B2 (en) | 2010-10-05 | 2013-12-10 | Intematix Corporation | Wavelength conversion component with a diffusing layer |
| US8957585B2 (en) | 2010-10-05 | 2015-02-17 | Intermatix Corporation | Solid-state light emitting devices with photoluminescence wavelength conversion |
| US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
| DE102010042217A1 (en) | 2010-10-08 | 2012-04-12 | Osram Ag | Optoelectronic semiconductor component and method for its production |
| US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
| US8846172B2 (en) | 2010-10-18 | 2014-09-30 | Nitto Denko Corporation | Light emissive ceramic laminate and method of making same |
| WO2012053924A1 (en) | 2010-10-22 | 2012-04-26 | Vishnyakov Anatoly Vasilyevich | Luminescent material for solid-state sources of white light |
| EP2633227B1 (en) | 2010-10-29 | 2018-08-29 | iLumisys, Inc. | Mechanisms for reducing risk of shock during installation of light tube |
| JP6369774B2 (en)* | 2010-10-29 | 2018-08-08 | 株式会社光波 | Light emitting device |
| JP5545866B2 (en)* | 2010-11-01 | 2014-07-09 | シチズン電子株式会社 | Semiconductor light emitting device |
| US8329484B2 (en)* | 2010-11-02 | 2012-12-11 | Tsmc Solid State Lighting Ltd. | Phosphor with Ce3+/Ce3+, Li+ doped luminescent materials |
| CN102456294A (en)* | 2010-11-02 | 2012-05-16 | 展晶科技(深圳)有限公司 | LED (light-emitting diode) display device |
| DE102010050832A1 (en)* | 2010-11-09 | 2012-05-10 | Osram Opto Semiconductors Gmbh | Luminescence conversion element, method for its production and optoelectronic component with luminescence conversion element |
| US8651681B2 (en) | 2010-11-10 | 2014-02-18 | Osram Sylvania Inc. | Luminescent ceramic converter and LED containing same |
| US20150188002A1 (en)* | 2010-11-11 | 2015-07-02 | Auterra, Inc. | Light emitting devices having rare earth and transition metal activated phosphors and applications thereof |
| CN102097571A (en)* | 2010-11-16 | 2011-06-15 | 深圳市瑞丰光电子股份有限公司 | Yellow/green light diode, backlight, mobile phone and illumination indicating device |
| WO2012066425A2 (en) | 2010-11-16 | 2012-05-24 | Saint-Gobain Cristaux Et Detecteurs | Scintillation compound including a rare earth element and a process of forming the same |
| EP3637482B1 (en) | 2010-11-18 | 2022-04-20 | Nippon Electric Glass Co., Ltd. | Wavelength conversion element and light source comprising the same |
| TWI460892B (en)* | 2010-11-19 | 2014-11-11 | Advanced Optoelectronic Tech | Led package structure |
| KR20120054484A (en)* | 2010-11-19 | 2012-05-30 | 엘지이노텍 주식회사 | Light emitting device package and method of fabricating the same |
| US8343785B2 (en)* | 2010-11-30 | 2013-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitridosilicate phosphor tunable light-emitting diodes by using UV and blue chips |
| CN103347982B (en)* | 2010-12-01 | 2016-05-25 | 日东电工株式会社 | There is emissivity ceramic material and manufacture method and the using method of doping content gradient |
| US20120138874A1 (en) | 2010-12-02 | 2012-06-07 | Intematix Corporation | Solid-state light emitting devices and signage with photoluminescence wavelength conversion and photoluminescent compositions therefor |
| US8556469B2 (en) | 2010-12-06 | 2013-10-15 | Cree, Inc. | High efficiency total internal reflection optic for solid state lighting luminaires |
| US8870415B2 (en) | 2010-12-09 | 2014-10-28 | Ilumisys, Inc. | LED fluorescent tube replacement light with reduced shock hazard |
| US9074126B2 (en) | 2010-12-16 | 2015-07-07 | Ube Industries, Ltd. | Ceramic composite for light conversion |
| US8867295B2 (en) | 2010-12-17 | 2014-10-21 | Enpirion, Inc. | Power converter for a memory module |
| US8772817B2 (en) | 2010-12-22 | 2014-07-08 | Cree, Inc. | Electronic device submounts including substrates with thermally conductive vias |
| CN103384794B (en) | 2010-12-23 | 2018-05-29 | 三星电子株式会社 | Optical components containing quantum dots |
| CN102140690B (en)* | 2010-12-31 | 2013-05-01 | 陈哲艮 | Photoluminescent wafer as well as preparation method and application thereof |
| KR101340552B1 (en)* | 2010-12-31 | 2013-12-11 | 제일모직주식회사 | A method for assembling module of mobile phone |
| US8354684B2 (en) | 2011-01-09 | 2013-01-15 | Bridgelux, Inc. | Packaging photon building blocks having only top side connections in an interconnect structure |
| US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| JP5445473B2 (en) | 2011-01-14 | 2014-03-19 | 信越化学工業株式会社 | Silicone resin composition for optical material formation and optical material |
| US8389957B2 (en) | 2011-01-14 | 2013-03-05 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
| US9508904B2 (en) | 2011-01-31 | 2016-11-29 | Cree, Inc. | Structures and substrates for mounting optical elements and methods and devices for providing the same background |
| KR101210066B1 (en) | 2011-01-31 | 2012-12-07 | 엘지이노텍 주식회사 | Light conversion member and display device having the same |
| US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
| US9068701B2 (en) | 2012-01-26 | 2015-06-30 | Cree, Inc. | Lamp structure with remote LED light source |
| US9234655B2 (en) | 2011-02-07 | 2016-01-12 | Cree, Inc. | Lamp with remote LED light source and heat dissipating elements |
| US11251164B2 (en) | 2011-02-16 | 2022-02-15 | Creeled, Inc. | Multi-layer conversion material for down conversion in solid state lighting |
| JP5654378B2 (en)* | 2011-02-18 | 2015-01-14 | パナソニックＩｐマネジメント株式会社 | Light emitting device |
| TWI431813B (en)* | 2011-02-24 | 2014-03-21 | Genesis Photonics Inc | Light emitting diode components |
| WO2012116114A1 (en)* | 2011-02-24 | 2012-08-30 | Nitto Denko Corporation | Light emitting composite with phosphor components |
| TWM407494U (en)* | 2011-02-25 | 2011-07-11 | Unity Opto Technology Co Ltd | LED package structure |
| US20130329448A1 (en)* | 2011-03-01 | 2013-12-12 | Osram Gmbh | Lighting apparatus with phosphor element |
| JP2012182376A (en)* | 2011-03-02 | 2012-09-20 | Stanley Electric Co Ltd | Wavelength conversion member and light source device |
| US8278806B1 (en) | 2011-03-02 | 2012-10-02 | Osram Sylvania Inc. | LED reflector lamp |
| WO2012125585A1 (en) | 2011-03-11 | 2012-09-20 | Intematix Corporation | Millisecond decay phosphors for ac led lighting applications |
| EP2688114B1 (en) | 2011-03-15 | 2017-03-22 | Kabushiki Kaisha Toshiba | White light source |
| US9004705B2 (en) | 2011-04-13 | 2015-04-14 | Intematix Corporation | LED-based light sources for light emitting devices and lighting arrangements with photoluminescence wavelength conversion |
| KR101337999B1 (en)* | 2011-04-20 | 2013-12-06 | 조성매 | White light emitting diode having single phase phosphor |
| CN102563543B (en) | 2011-05-09 | 2015-01-07 | 深圳市绎立锐光科技开发有限公司 | Method and light source for generating high-brightness homogeneous light based on optical wavelength conversion |
| WO2013019299A2 (en) | 2011-05-11 | 2013-02-07 | Qd Vision, Inc. | Method for processing devices including quantum dots and devices |
| US8513900B2 (en) | 2011-05-12 | 2013-08-20 | Ledengin, Inc. | Apparatus for tuning of emitter with multiple LEDs to a single color bin |
| JP5472464B2 (en)* | 2011-05-18 | 2014-04-16 | 東洋紡株式会社 | Liquid crystal display device, polarizing plate and polarizer protective film |
| CN102305370B (en)* | 2011-05-18 | 2013-04-17 | 福建华映显示科技有限公司 | Backlight module and method for selecting lighting component provided with backlight module |
| CN103649791B (en)* | 2011-05-18 | 2016-03-02 | 东洋纺株式会社 | Polarizing plate suitable for three-dimensional image display and liquid crystal display device |
| US8860056B2 (en) | 2011-12-01 | 2014-10-14 | Tsmc Solid State Lighting Ltd. | Structure and method for LED with phosphor coating |
| US8747697B2 (en)* | 2011-06-07 | 2014-06-10 | Cree, Inc. | Gallium-substituted yttrium aluminum garnet phosphor and light emitting devices including the same |
| TWI467808B (en)* | 2011-06-27 | 2015-01-01 | Delta Electronics Inc | Light-emitting diode element, manufacturing method thereof and light-emitting device |
| US8663501B2 (en) | 2011-06-29 | 2014-03-04 | General Electric Company | Green emitting phosphor |
| CN103222026A (en) | 2011-07-04 | 2013-07-24 | 松下电器产业株式会社 | plasma display panel |
| CN103703102B (en) | 2011-07-05 | 2015-09-30 | 松下电器产业株式会社 | Rare earth class aluminium garnet type fluor and employ the light-emitting device of this fluor |
| KR101305696B1 (en) | 2011-07-14 | 2013-09-09 | 엘지이노텍 주식회사 | Display device and optical member |
| US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
| KR20130009020A (en) | 2011-07-14 | 2013-01-23 | 엘지이노텍 주식회사 | Optical member, display device having the same and method of fabricating the same |
| KR101262520B1 (en) | 2011-07-18 | 2013-05-08 | 엘지이노텍 주식회사 | Optical member and display device including same |
| KR101241549B1 (en) | 2011-07-18 | 2013-03-11 | 엘지이노텍 주식회사 | Optical member, display device having the same and method of fabricating the same |
| KR101893494B1 (en) | 2011-07-18 | 2018-08-30 | 엘지이노텍 주식회사 | Optical member and display device having the same |
| KR101294415B1 (en) | 2011-07-20 | 2013-08-08 | 엘지이노텍 주식회사 | Optical member and display device having the same |
| JP5396439B2 (en)* | 2011-07-22 | 2014-01-22 | 学校法人慶應義塾 | Method for improving visibility of liquid crystal display device, and liquid crystal display device using the same |
| JP5559108B2 (en)* | 2011-08-05 | 2014-07-23 | 株式会社東芝 | Semiconductor light emitting device |
| CN103718650A (en)* | 2011-08-16 | 2014-04-09 | 三星电子株式会社 | Led device having adjustable color temperature |
| US20140239809A1 (en) | 2011-08-18 | 2014-08-28 | Lynk Labs, Inc. | Devices and systems having ac led circuits and methods of driving the same |
| US9072171B2 (en) | 2011-08-24 | 2015-06-30 | Ilumisys, Inc. | Circuit board mount for LED light |
| JP5899485B2 (en)* | 2011-08-29 | 2016-04-06 | パナソニックＩｐマネジメント株式会社 | Resin coating apparatus and resin coating method |
| KR101823930B1 (en) | 2011-08-29 | 2018-01-31 | 삼성전자주식회사 | Light Emitting Diode Package Array and Method of Manufacturing Light Emitting Diode Package |
| JP5252107B2 (en) | 2011-09-02 | 2013-07-31 | 三菱化学株式会社 | Illumination method and light emitting device |
| CN105357796B (en) | 2011-09-02 | 2019-02-15 | 西铁城电子株式会社 | Illumination method and light-emitting device |
| WO2013036062A2 (en)* | 2011-09-08 | 2013-03-14 | Lg Innotek Co., Ltd. | Lighting module |
| US8492746B2 (en) | 2011-09-12 | 2013-07-23 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) dice having wavelength conversion layers |
| US8841146B2 (en) | 2011-09-12 | 2014-09-23 | SemiLEDs Optoelectronics Co., Ltd. | Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristics |
| US8912021B2 (en) | 2011-09-12 | 2014-12-16 | SemiLEDs Optoelectronics Co., Ltd. | System and method for fabricating light emitting diode (LED) dice with wavelength conversion layers |
| US8410508B1 (en) | 2011-09-12 | 2013-04-02 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication method |
| DE102011113802A1 (en) | 2011-09-20 | 2013-03-21 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor component and module with a plurality of such components |
| TWI448806B (en) | 2011-09-22 | 2014-08-11 | Delta Electronics Inc | Phosphor device and illumination system and projection equipment with the same |
| US10688527B2 (en) | 2011-09-22 | 2020-06-23 | Delta Electronics, Inc. | Phosphor device comprising plural phosphor agents for converting waveband light into plural color lights with different wavelength peaks |
| US10310363B2 (en) | 2011-09-22 | 2019-06-04 | Delta Electronics, Inc. | Phosphor device with spectrum of converted light comprising at least a color light |
| US20130088848A1 (en) | 2011-10-06 | 2013-04-11 | Intematix Corporation | Solid-state lamps with improved radial emission and thermal performance |
| US8992051B2 (en) | 2011-10-06 | 2015-03-31 | Intematix Corporation | Solid-state lamps with improved radial emission and thermal performance |
| US9365766B2 (en) | 2011-10-13 | 2016-06-14 | Intematix Corporation | Wavelength conversion component having photo-luminescence material embedded into a hermetic material for remote wavelength conversion |
| US9115868B2 (en) | 2011-10-13 | 2015-08-25 | Intematix Corporation | Wavelength conversion component with improved protective characteristics for remote wavelength conversion |
| KR102044048B1 (en) | 2011-10-13 | 2019-11-12 | 인터매틱스 코포레이션 | Photoluminescence wavelength conversion components for solid-state light emitting devices and lamps |
| US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
| US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
| CN102495495B (en) | 2011-10-28 | 2015-03-11 | 友达光电股份有限公司 | Display device with perspective and image display method used by same |
| KR101251815B1 (en)* | 2011-11-07 | 2013-04-09 | 엘지이노텍 주식회사 | Optical sheet and display device having the same |
| US8591072B2 (en) | 2011-11-16 | 2013-11-26 | Oree, Inc. | Illumination apparatus confining light by total internal reflection and methods of forming the same |
| WO2013078251A1 (en) | 2011-11-22 | 2013-05-30 | Qd Vision, Inc. | Stress-resistant component for use with quantum dots |
| WO2013082609A1 (en) | 2011-12-02 | 2013-06-06 | Lynk Labs, Inc. | Color temperature controlled and low thd led lighting devices and systems and methods of driving the same |
| CN103173217B (en)* | 2011-12-23 | 2017-03-01 | 李建立 | Temperature-resistant nitride fluorescent material and light-emitting device containing it |
| US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
| US8967811B2 (en) | 2012-01-20 | 2015-03-03 | Lumencor, Inc. | Solid state continuous white light source |
| WO2013112542A1 (en) | 2012-01-25 | 2013-08-01 | Intematix Corporation | Long decay phosphors for lighting applications |
| JP5588521B2 (en) | 2012-02-08 | 2014-09-10 | パナソニック株式会社 | Yttrium aluminum garnet type phosphor |
| KR20140112534A (en) | 2012-02-08 | 2014-09-23 | 파나소닉 주식회사 | Light-emitting device |
| JP5893429B2 (en)* | 2012-02-21 | 2016-03-23 | スタンレー電気株式会社 | Phosphor for methane gas sensor, light source for methane gas sensor, and methane gas sensor |
| DE102012202927B4 (en) | 2012-02-27 | 2021-06-10 | Osram Gmbh | LIGHT SOURCE WITH LED CHIP AND LUMINOUS LAYER |
| US11032884B2 (en) | 2012-03-02 | 2021-06-08 | Ledengin, Inc. | Method for making tunable multi-led emitter module |
| US9184518B2 (en) | 2012-03-02 | 2015-11-10 | Ilumisys, Inc. | Electrical connector header for an LED-based light |
| EP2823017B1 (en) | 2012-03-06 | 2017-04-19 | Nitto Denko Corporation | Ceramic body for light emitting devices |
| US9581311B2 (en)* | 2012-03-12 | 2017-02-28 | L-3 Communications Corporation | Backlight display using photoluminescent material tuned to improve NVIS compatibility |
| US9068717B2 (en)* | 2012-03-12 | 2015-06-30 | L-3 Communications Corporation | Backlight display using photoluminescent material tuned to improve NVIS compatibility |
| US9488359B2 (en) | 2012-03-26 | 2016-11-08 | Cree, Inc. | Passive phase change radiators for LED lamps and fixtures |
| US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
| JP6119739B2 (en) | 2012-03-30 | 2017-04-26 | 宇部興産株式会社 | Ceramic composite for light conversion and light emitting device using the same |
| US9800016B1 (en) | 2012-04-05 | 2017-10-24 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
| US10559939B1 (en) | 2012-04-05 | 2020-02-11 | Soraa Laser Diode, Inc. | Facet on a gallium and nitrogen containing laser diode |
| JP2015121569A (en)* | 2012-04-16 | 2015-07-02 | シャープ株式会社 | Display device |
| KR102071849B1 (en) | 2012-04-20 | 2020-01-31 | 메르크 파텐트 게엠베하 | Electro-optical switching element and electro-optical display |
| US9252338B2 (en) | 2012-04-26 | 2016-02-02 | Intematix Corporation | Methods and apparatus for implementing color consistency in remote wavelength conversion |
| US8907809B2 (en) | 2012-05-03 | 2014-12-09 | Abl Ip Holding Llc | Visual perception and acuity disruption techniques and systems |
| US9500355B2 (en) | 2012-05-04 | 2016-11-22 | GE Lighting Solutions, LLC | Lamp with light emitting elements surrounding active cooling device |
| CN104364346A (en)* | 2012-05-07 | 2015-02-18 | 帕夫莱·拉多万诺维奇 | Luminescent material and its production method |
| JP6132204B2 (en) | 2012-05-16 | 2017-05-24 | パナソニックＩｐマネジメント株式会社 | Wavelength conversion element, manufacturing method thereof, LED element using the wavelength conversion element, and semiconductor laser light emitting device |
| WO2013175773A1 (en) | 2012-05-22 | 2013-11-28 | パナソニック株式会社 | Wavelength conversion element and method for manufacturing same, as well as led element and semiconductor laser emission device using wavelength conversion element |
| WO2013179625A1 (en) | 2012-05-31 | 2013-12-05 | パナソニック株式会社 | Led module and production method therefor, lighting device |
| JP5304939B1 (en)* | 2012-05-31 | 2013-10-02 | 大日本印刷株式会社 | Optical laminate, polarizing plate, method for manufacturing polarizing plate, image display device, method for manufacturing image display device, and method for improving visibility of image display device |
| US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
| US9231178B2 (en) | 2012-06-07 | 2016-01-05 | Cooledge Lighting, Inc. | Wafer-level flip chip device packages and related methods |
| JP5789564B2 (en)* | 2012-06-11 | 2015-10-07 | 学校法人慶應義塾 | Method for improving visibility of liquid crystal display device, and liquid crystal display device using the same |
| DE112013002944T5 (en) | 2012-06-13 | 2015-02-19 | Innotec, Corp. | Flexible hollow fiber optic cable |
| KR20130140462A (en) | 2012-06-14 | 2013-12-24 | 삼성디스플레이 주식회사 | Photoluminescence display device |
| US9217561B2 (en) | 2012-06-15 | 2015-12-22 | Lumencor, Inc. | Solid state light source for photocuring |
| WO2014006501A1 (en) | 2012-07-03 | 2014-01-09 | Yosi Shani | Planar remote phosphor illumination apparatus |
| US9163794B2 (en) | 2012-07-06 | 2015-10-20 | Ilumisys, Inc. | Power supply assembly for LED-based light tube |
| US9271367B2 (en) | 2012-07-09 | 2016-02-23 | Ilumisys, Inc. | System and method for controlling operation of an LED-based light |
| US8994056B2 (en) | 2012-07-13 | 2015-03-31 | Intematix Corporation | LED-based large area display |
| JP2014130998A (en)* | 2012-07-20 | 2014-07-10 | Mitsubishi Chemicals Corp | Light-emitting device, wavelength conversion member, phosphor composition and mixed phosphor |
| JP2014170895A (en)* | 2013-03-05 | 2014-09-18 | Mitsubishi Chemicals Corp | Wavelength conversion member and light-emitting device using the same |
| TWI563690B (en)* | 2012-07-20 | 2016-12-21 | Mitsubishi Eng Plastics Corp | A wavelength conversion member and application thereof |
| US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
| JP6126103B2 (en) | 2012-08-31 | 2017-05-10 | シチズン電子株式会社 | Illumination method and light emitting device |
| KR101629622B1 (en) | 2012-09-28 | 2016-06-21 | 샤프 가부시키가이샤 | Production method for sealing material containing fluorescent body, production method for light-emitting device, and dispenser |
| US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
| RU2533709C2 (en)* | 2012-10-05 | 2014-11-20 | Общество с ограниченной ответственностью "Минерал" | Monocrystalline fluorescent material for white light-emitting diodes |
| DE102012220980A1 (en) | 2012-11-16 | 2014-05-22 | Osram Gmbh | OPTOELECTRONIC SEMICONDUCTOR ELEMENT |
| EP2733190B1 (en)* | 2012-11-16 | 2020-01-01 | LG Innotek Co., Ltd. | Phosphor composition and light emitting device package having the same |
| JP6140730B2 (en)* | 2012-12-10 | 2017-05-31 | 株式会社エルム | Method for creating phosphor layer |
| TWM450828U (en)* | 2012-12-14 | 2013-04-11 | Litup Technology Co Ltd | Thermoelectrically separated LED module and associated thermal carrier |
| US9437788B2 (en)* | 2012-12-19 | 2016-09-06 | Cree, Inc. | Light emitting diode (LED) component comprising a phosphor with improved excitation properties |
| CN104918892B (en) | 2012-12-20 | 2017-03-22 | 松下知识产权经营株式会社 | Rare-earth aluminum garnet-type inorganic oxide, phosphor, and light-emitting device using the phosphor |
| JP6089686B2 (en)* | 2012-12-25 | 2017-03-08 | 日亜化学工業株式会社 | Light emitting device |
| US20140185269A1 (en) | 2012-12-28 | 2014-07-03 | Intermatix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
| US9474116B2 (en) | 2013-01-03 | 2016-10-18 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Minimized color shift lighting arrangement during dimming |
| TW201428087A (en) | 2013-01-11 | 2014-07-16 | kai-xiong Cai | Light-emitting device and temperature-resistant carbide fluorescent material thereof |
| TW201429009A (en)* | 2013-01-11 | 2014-07-16 | Ecocera Optronics Co Ltd | Light-emitting diode device and method for manufacturing heat-dissipating substrate |
| CN103943759B (en) | 2013-01-21 | 2018-04-27 | 圣戈本陶瓷及塑料股份有限公司 | Include the object and its formation process for the material containing gadolinium that shines |
| US9217543B2 (en) | 2013-01-28 | 2015-12-22 | Intematix Corporation | Solid-state lamps with omnidirectional emission patterns |
| DE102013100888A1 (en)* | 2013-01-29 | 2014-07-31 | Schott Ag | Light concentrator or distributor |
| US8933478B2 (en) | 2013-02-19 | 2015-01-13 | Cooledge Lighting Inc. | Engineered-phosphor LED packages and related methods |
| US8754435B1 (en) | 2013-02-19 | 2014-06-17 | Cooledge Lighting Inc. | Engineered-phosphor LED package and related methods |
| EP2966944A4 (en) | 2013-03-04 | 2016-11-23 | Citizen Electronics | LIGHT EMITTING DEVICE, METHOD FOR DESIGNING LIGHT EMITTING DEVICE, METHOD FOR EXCITATION OF LIGHT EMITTING DEVICE, LIGHTING METHOD, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE |
| EP2966149B1 (en) | 2013-03-08 | 2018-01-10 | Panasonic Intellectual Property Management Co., Ltd. | Rare earth aluminum garnet-type inorganic oxide, phosphor and light-emitting device using same |
| US9754807B2 (en)* | 2013-03-12 | 2017-09-05 | Applied Materials, Inc. | High density solid state light source array |
| US9285084B2 (en) | 2013-03-14 | 2016-03-15 | Ilumisys, Inc. | Diffusers for LED-based lights |
| WO2014151263A1 (en)* | 2013-03-15 | 2014-09-25 | Intematix Corporation | Photoluminescence wavelength conversion components |
| US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
| US9295855B2 (en) | 2013-03-15 | 2016-03-29 | Gary W. Jones | Ambient spectrum light conversion device |
| JP5718398B2 (en)* | 2013-03-18 | 2015-05-13 | オリンパス株式会社 | Endoscope device |
| JP5698779B2 (en)* | 2013-03-18 | 2015-04-08 | オリンパス株式会社 | Endoscope apparatus having light source device |
| JP5698780B2 (en)* | 2013-03-18 | 2015-04-08 | オリンパス株式会社 | LIGHT SOURCE DEVICE AND ENDOSCOPE DEVICE EQUIPPED WITH THE SAME |
| CZ304579B6 (en) | 2013-04-22 | 2014-07-16 | Crytur Spol. S R. O. | White light-emitting diode with monocrystalline luminophore and process for producing thereof |
| WO2014173821A1 (en)* | 2013-04-25 | 2014-10-30 | Koninklijke Philips N.V. | A light emitting diode component |
| JP6167913B2 (en) | 2013-04-26 | 2017-07-26 | 日亜化学工業株式会社 | Phosphor and light emitting device using the same |
| JP6102763B2 (en) | 2013-04-26 | 2017-03-29 | 日亜化学工業株式会社 | Phosphor, light emitting device using the same, and method for producing phosphor |
| US8941295B2 (en) | 2013-04-29 | 2015-01-27 | Kai-Shon Tsai | Fluorescent material and illumination device |
| US9231168B2 (en) | 2013-05-02 | 2016-01-05 | Industrial Technology Research Institute | Light emitting diode package structure |
| JP2013179335A (en)* | 2013-05-08 | 2013-09-09 | Mitsubishi Chemicals Corp | White light emitting element |
| CN105229807A (en) | 2013-05-28 | 2016-01-06 | 夏普株式会社 | The manufacture method of light-emitting device |
| CN104241262B (en) | 2013-06-14 | 2020-11-06 | 惠州科锐半导体照明有限公司 | Light emitting device and display device |
| US10084119B2 (en)* | 2013-06-18 | 2018-09-25 | Sharp Kabushiki Kaisha | Light-emitting device |
| KR102098589B1 (en) | 2013-07-04 | 2020-04-09 | 삼성전자주식회사 | Wavelength-converted element, manufacturing method of the same and semiconductor light emitting apparatus having the same |
| CN104332539B (en) | 2013-07-22 | 2017-10-24 | 中国科学院福建物质结构研究所 | GaN base LED epitaxial structure and its manufacture method |
| TW201508207A (en)* | 2013-08-27 | 2015-03-01 | Hon Hai Prec Ind Co Ltd | Vehicle lamp module |
| US9863595B2 (en) | 2013-08-28 | 2018-01-09 | Sharp Kabushiki Kaisha | Light-emitting unit with optical plate reflecting excitation light and transmitting fluorescent light, and light-emitting device, illumination device, and vehicle headlight including the unit |
| JP6139334B2 (en)* | 2013-08-28 | 2017-05-31 | 東芝マテリアル株式会社 | Phosphor and its manufacturing method, and LED lamp using the phosphor |
| KR102106143B1 (en) | 2013-09-02 | 2020-05-04 | 대주전자재료 주식회사 | Red fluorescent material and white light emitting apparatus using same |
| JPWO2015045260A1 (en) | 2013-09-30 | 2017-03-09 | パナソニックＩｐマネジメント株式会社 | Phosphor and light emitting device, illumination light source, and illumination device using the same |
| CN105914287B (en) | 2013-10-08 | 2019-02-26 | 欧司朗光电半导体有限公司 | Luminescent material, method for producing luminescent material, and application of luminescent material |
| US9267650B2 (en) | 2013-10-09 | 2016-02-23 | Ilumisys, Inc. | Lens for an LED-based light |
| JP5620562B1 (en)* | 2013-10-23 | 2014-11-05 | 株式会社光波 | Single crystal phosphor and light emitting device |
| JP6384893B2 (en)* | 2013-10-23 | 2018-09-05 | 株式会社光波 | Single crystal phosphor and light emitting device |
| FR3012677B1 (en)* | 2013-10-25 | 2015-12-25 | Commissariat Energie Atomique | LIGHT EMISSIVE DEVICE, DEVICE AND METHOD FOR ADJUSTING A LIGHT EMITTING OF A PHOSPHORUS LIGHT EMITTING DIODE |
| US10069046B2 (en) | 2013-11-13 | 2018-09-04 | Lg Innotek Co., Ltd. | Bluish green phosphor and light emitting device package including the same |
| WO2015077357A1 (en) | 2013-11-22 | 2015-05-28 | Nitto Denko Corporation | Light extraction element |
| US9551468B2 (en) | 2013-12-10 | 2017-01-24 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
| US10288233B2 (en) | 2013-12-10 | 2019-05-14 | Gary W. Jones | Inverse visible spectrum light and broad spectrum light source for enhanced vision |
| JP6222452B2 (en) | 2013-12-17 | 2017-11-01 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device |
| CN111554790B (en) | 2013-12-27 | 2023-09-15 | 西铁城电子株式会社 | Design method of lighting device |
| EP3091585A4 (en) | 2013-12-27 | 2017-07-26 | Citizen Electronics Co., Ltd | Light-emitting device and method for designing light emitting device |
| CN106063381A (en) | 2014-01-22 | 2016-10-26 | 伊卢米斯公司 | LED-based light with addressed LEDs |
| US9406654B2 (en) | 2014-01-27 | 2016-08-02 | Ledengin, Inc. | Package for high-power LED devices |
| JP6528418B2 (en) | 2014-01-29 | 2019-06-12 | 日亜化学工業株式会社 | Phosphor and light emitting device using the same |
| CN103779488A (en)* | 2014-01-31 | 2014-05-07 | 芜湖市神龙新能源科技有限公司 | White LED light photoelectric glass |
| JP6038824B2 (en) | 2014-02-07 | 2016-12-07 | 信越化学工業株式会社 | Curable composition, semiconductor device, and organosilicon compound containing ester bond |
| KR101501020B1 (en)* | 2014-02-17 | 2015-03-13 | 주식회사 루멘스 | Light emitting device package, backlight unit, lighting device and its manufacturing method |
| US9360188B2 (en) | 2014-02-20 | 2016-06-07 | Cree, Inc. | Remote phosphor element filled with transparent material and method for forming multisection optical elements |
| KR102219263B1 (en) | 2014-02-28 | 2021-02-24 | 대주전자재료 주식회사 | Acidic nitride-based red fluorescent material and white light emitting apparatus using same |
| US9442245B2 (en)* | 2014-03-13 | 2016-09-13 | Norman Napaul Pepin | Light scaffold electric arc sound effect |
| US9680067B2 (en) | 2014-03-18 | 2017-06-13 | GE Lighting Solutions, LLC | Heavily phosphor loaded LED packages having higher stability |
| US9590148B2 (en)* | 2014-03-18 | 2017-03-07 | GE Lighting Solutions, LLC | Encapsulant modification in heavily phosphor loaded LED packages for improved stability |
| JP2015199640A (en) | 2014-04-01 | 2015-11-12 | 日本電気硝子株式会社 | Wavelength conversion member and light-emitting device using the same |
| KR102213650B1 (en) | 2014-04-18 | 2021-02-08 | 대주전자재료 주식회사 | Acidic nitride-based fluorescent material and white light emitting apparatus using same |
| US9593812B2 (en) | 2014-04-23 | 2017-03-14 | Cree, Inc. | High CRI solid state lighting devices with enhanced vividness |
| US9241384B2 (en) | 2014-04-23 | 2016-01-19 | Cree, Inc. | Solid state lighting devices with adjustable color point |
| US9510400B2 (en) | 2014-05-13 | 2016-11-29 | Ilumisys, Inc. | User input systems for an LED-based light |
| US9215761B2 (en) | 2014-05-15 | 2015-12-15 | Cree, Inc. | Solid state lighting devices with color point non-coincident with blackbody locus |
| CN103980902A (en)* | 2014-05-21 | 2014-08-13 | 烟台建塬光电技术有限公司 | Ga-Bi doped aluminate green phosphor and preparation method thereof |
| JP2016027613A (en) | 2014-05-21 | 2016-02-18 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device using the same |
| US9318670B2 (en) | 2014-05-21 | 2016-04-19 | Intematix Corporation | Materials for photoluminescence wavelength converted solid-state light emitting devices and arrangements |
| DE102014107321B4 (en) | 2014-05-23 | 2019-06-27 | Tailorlux Gmbh | Infrared LED |
| KR101476217B1 (en) | 2014-05-28 | 2014-12-24 | 엘지전자 주식회사 | Phosphor emitting yellow light and light emitting device package using the same |
| US9515056B2 (en) | 2014-06-06 | 2016-12-06 | Cree, Inc. | Solid state lighting device including narrow spectrum emitter |
| US9192013B1 (en) | 2014-06-06 | 2015-11-17 | Cree, Inc. | Lighting devices with variable gamut |
| JP6406109B2 (en) | 2014-07-08 | 2018-10-17 | 日亜化学工業株式会社 | Phosphor, light emitting device using the same, and method for producing phosphor |
| KR101467808B1 (en) | 2014-07-14 | 2014-12-03 | 엘지전자 주식회사 | Phosphor emitting yellow light and light emitting device package using the same |
| US20160064630A1 (en)* | 2014-08-26 | 2016-03-03 | Texas Instruments Incorporated | Flip chip led package |
| KR102275147B1 (en) | 2014-09-12 | 2021-07-09 | 대주전자재료 주식회사 | Oxynitride-based fluorescent material and light emitting apparatus using same |
| US9528876B2 (en) | 2014-09-29 | 2016-12-27 | Innovative Science Tools, Inc. | Solid state broad band near-infrared light source |
| CN105459888B (en)* | 2014-09-30 | 2020-03-20 | 福特全球技术公司 | Photoluminescent vehicle graphics |
| CN105567236B (en)* | 2014-10-15 | 2018-07-20 | 有研稀土新材料股份有限公司 | Carbuncle type fluorescent powder and preparation method and device comprising the fluorescent powder |
| CN107004677B (en) | 2014-11-26 | 2020-08-25 | 硅谷光擎 | Compact transmitter for warm dimming and color-tunable lamps |
| US9701411B2 (en)* | 2014-12-10 | 2017-07-11 | Airbus Operations Gmbh | Evacuation slide with a guidance marking |
| JP6486099B2 (en)* | 2014-12-19 | 2019-03-20 | シチズン電子株式会社 | LED light emitting module |
| JP6514510B2 (en)* | 2015-01-14 | 2019-05-15 | 株式会社小糸製作所 | Vehicle lamp |
| US9530944B2 (en) | 2015-01-27 | 2016-12-27 | Cree, Inc. | High color-saturation lighting devices with enhanced long wavelength illumination |
| US9702524B2 (en) | 2015-01-27 | 2017-07-11 | Cree, Inc. | High color-saturation lighting devices |
| CN107406764B (en) | 2015-02-26 | 2021-03-09 | 圣戈班晶体及检测公司 | Scintillation crystals including co-doped rare earth silicates, radiation detection apparatus including scintillation crystals, and methods of forming the same |
| US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
| US9681510B2 (en) | 2015-03-26 | 2017-06-13 | Cree, Inc. | Lighting device with operation responsive to geospatial position |
| EP3244459B1 (en) | 2015-04-02 | 2020-10-14 | Nichia Corporation | Light emitting device |
| US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
| US9974138B2 (en) | 2015-04-21 | 2018-05-15 | GE Lighting Solutions, LLC | Multi-channel lamp system and method with mixed spectrum |
| US9943042B2 (en) | 2015-05-18 | 2018-04-17 | Biological Innovation & Optimization Systems, LLC | Grow light embodying power delivery and data communications features |
| US10161568B2 (en) | 2015-06-01 | 2018-12-25 | Ilumisys, Inc. | LED-based light with canted outer walls |
| US9900957B2 (en) | 2015-06-11 | 2018-02-20 | Cree, Inc. | Lighting device including solid state emitters with adjustable control |
| KR102069081B1 (en) | 2015-06-12 | 2020-01-22 | 가부시끼가이샤 도시바 | Phosphor and its manufacturing method, and LED lamp |
| JP6544082B2 (en)* | 2015-06-30 | 2019-07-17 | 日亜化学工業株式会社 | Light emitting device |
| CN106328008B (en)* | 2015-06-30 | 2019-03-22 | 光宝光电(常州)有限公司 | Colloid is filled to the preparation method of shell, the digital display of light emitting diode and preparation method |
| WO2017013867A1 (en)* | 2015-07-22 | 2017-01-26 | パナソニックＩｐマネジメント株式会社 | Garnet compound and method for producing same, light emitting device and decorative article using garnet compound, and methodof using garnet compound |
| US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
| CN106501994B (en)* | 2015-09-08 | 2021-10-29 | 青岛海信电器股份有限公司 | Quantum dot light-emitting device, backlight module and display device |
| US9788387B2 (en) | 2015-09-15 | 2017-10-10 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
| US9844116B2 (en) | 2015-09-15 | 2017-12-12 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
| CA2994308C (en) | 2015-09-29 | 2020-02-25 | Cabatech, Llc | Horticulture grow lights |
| JP2017107071A (en) | 2015-12-10 | 2017-06-15 | 日本電気硝子株式会社 | Wavelength conversion member, wavelength conversion element, and light emitting device using them |
| JP6681581B2 (en)* | 2015-12-21 | 2020-04-15 | パナソニックＩｐマネジメント株式会社 | Light emitting device and lighting device |
| US10354938B2 (en) | 2016-01-12 | 2019-07-16 | Greentech LED | Lighting device using short thermal path cooling technology and other device cooling by placing selected openings on heat sinks |
| KR20180101493A (en) | 2016-01-14 | 2018-09-12 | 바스프 에스이 | Perylene bisimide with rigid 2,2'-biphenoxy bridges |
| CN108603112B (en) | 2016-03-08 | 2021-10-22 | 松下知识产权经营株式会社 | Phosphors and Light Emitting Devices |
| WO2017153216A1 (en)* | 2016-03-10 | 2017-09-14 | Lumileds Holding B.V. | Led module |
| US10355175B2 (en) | 2016-03-10 | 2019-07-16 | Panasonic Intellectual Property Management Co., Ltd. | Light emitting device |
| US10054485B2 (en) | 2016-03-17 | 2018-08-21 | Raytheon Company | UV LED-phosphor based hyperspectral calibrator |
| JP2018003006A (en) | 2016-06-24 | 2018-01-11 | パナソニック株式会社 | Phosphor, method of producing the same, and light-emitting device |
| JP6880528B2 (en) | 2016-06-27 | 2021-06-02 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device using it |
| JP6906277B2 (en) | 2016-06-27 | 2021-07-21 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device using it |
| WO2018042949A1 (en) | 2016-08-29 | 2018-03-08 | パナソニックＩｐマネジメント株式会社 | Phosphor and light emitting device |
| US10595376B2 (en) | 2016-09-13 | 2020-03-17 | Biological Innovation & Optimization Systems, LLC | Systems and methods for controlling the spectral content of LED lighting devices |
| CN109997182B (en)* | 2016-09-14 | 2022-11-15 | 路创技术有限责任公司 | Lighting apparatus and method for regulating periodic changes in analog output |
| JP2018058383A (en)* | 2016-09-30 | 2018-04-12 | トヨタ自動車株式会社 | Vehicle lower structure |
| EP3523303B1 (en) | 2016-10-06 | 2020-09-23 | Basf Se | 2-phenylphenoxy-substituted perylene bisimide compounds and their use |
| US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
| KR101961030B1 (en)* | 2016-11-18 | 2019-03-22 | 효성화학 주식회사 | Bright enhancing film and preparing method of the same |
| EP3545043A1 (en) | 2016-11-28 | 2019-10-02 | Merck Patent GmbH | Composition comprising a nanosized light emitting material |
| CN110036089B (en) | 2016-12-07 | 2022-08-30 | 神岛化学工业株式会社 | Ceramic composition |
| TW201828505A (en)* | 2017-01-20 | 2018-08-01 | 聯京光電股份有限公司 | Photoelectric package and method of manufacturing same |
| US10465869B2 (en) | 2017-01-30 | 2019-11-05 | Ideal Industries Lighting Llc | Skylight fixture |
| US10451229B2 (en) | 2017-01-30 | 2019-10-22 | Ideal Industries Lighting Llc | Skylight fixture |
| US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
| DE102017108136B4 (en) | 2017-04-13 | 2019-03-14 | X-Fab Semiconductor Foundries Ag | Geometrically shaped components in a transfer printing arrangement and associated methods |
| JP6917179B2 (en)* | 2017-04-18 | 2021-08-11 | スタンレー電気株式会社 | White light emitting device |
| US10824910B2 (en) | 2017-05-04 | 2020-11-03 | Htc Corporation | Image processing method, non-transitory computer readable storage medium and image processing system |
| JP6863071B2 (en)* | 2017-05-19 | 2021-04-21 | 日亜化学工業株式会社 | Fluorescent material and light emitting device having a composition of rare earth aluminum gallium salt |
| DE102017116936B4 (en)* | 2017-07-26 | 2024-10-02 | Ledvance Gmbh | Connection of an electrical conducting element to a circuit board of a lamp |
| US11079077B2 (en) | 2017-08-31 | 2021-08-03 | Lynk Labs, Inc. | LED lighting system and installation methods |
| JP7271516B2 (en)* | 2017-09-20 | 2023-05-11 | マテリオン プレシジョン オプティクス （シャンハイ） リミテッド | Phosphor wheel with inorganic binder |
| JP7022367B2 (en) | 2017-09-27 | 2022-02-18 | 日本電気硝子株式会社 | Glass used as wavelength conversion material, wavelength conversion material, wavelength conversion member and light emitting device |
| JP7002275B2 (en)* | 2017-10-03 | 2022-02-21 | 株式会社小糸製作所 | Vehicle lighting |
| KR102428755B1 (en)* | 2017-11-24 | 2022-08-02 | 엘지디스플레이 주식회사 | Optical fiber capable of converting wavelength and backlight unit using the same |
| JP7268315B2 (en) | 2017-12-12 | 2023-05-08 | 日本電気硝子株式会社 | WAVELENGTH CONVERSION MEMBER, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DEVICE |
| US11236101B2 (en) | 2017-12-19 | 2022-02-01 | Basf Se | Cyanoaryl substituted benz(othi)oxanthene compounds |
| CN108264234A (en)* | 2018-01-11 | 2018-07-10 | 武汉理工大学 | One kind is embedded with GYAGG：Flicker devitrified glass of Ce crystallite phases and preparation method thereof |
| US20190219874A1 (en)* | 2018-01-16 | 2019-07-18 | Huizhou China Star Optoelectronics Technology Co., Ltd. | Backlight module and display device |
| DE102019202785B4 (en) | 2018-03-02 | 2024-01-18 | Coorstek Kk | Glass element |
| US10575374B2 (en) | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
| CN111886318B (en) | 2018-03-20 | 2024-07-23 | 巴斯夫欧洲公司 | Yellow light emitting device |
| US11999648B2 (en) | 2018-04-25 | 2024-06-04 | Nippon Electric Glass Co., Ltd. | Wavelength conversion member and light emitting device using same |
| US12087741B2 (en) | 2018-05-17 | 2024-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| EP3588187A1 (en) | 2018-06-22 | 2020-01-01 | Sunland Optics Srl | An image projection system |
| JP7325885B2 (en) | 2018-06-22 | 2023-08-15 | ベーアーエスエフ・エスエー | Photostable Cyano-Substituted Boron-Dipyrromethene Dyes as Green Emitters for Display and Lighting Applications |
| IT201900009681A1 (en) | 2019-06-20 | 2020-12-20 | Tlpicoglass Srl | Image projection system |
| JPWO2020012923A1 (en)* | 2018-07-12 | 2021-08-02 | パナソニックＩｐマネジメント株式会社 | Light source device, projector and vehicle |
| JP6975863B2 (en)* | 2018-08-07 | 2021-12-01 | 三井金属鉱業株式会社 | Light diffusion member, and light diffusion structure and light emission structure using this |
| DE102018213377A1 (en)* | 2018-08-09 | 2020-02-13 | Robert Bosch Gmbh | Spectrometer and spectrometer calibration method |
| WO2020054192A1 (en) | 2018-09-12 | 2020-03-19 | パナソニックＩｐマネジメント株式会社 | Wavelength conversion member, light source device using same, projector and vehicle |
| DE102018217889B4 (en) | 2018-10-18 | 2023-09-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Yellow fluorescent and conversion LED |
| RU192820U1 (en)* | 2018-11-13 | 2019-10-02 | Василий Сергеевич Евтеев | LIGHT INFORMATION DEVICE |
| EP3881368A4 (en)* | 2018-11-15 | 2022-08-03 | Levin, Dean | LIGHT EMITTING LIQUID DECANTER AND METHOD OF LIGHT TREATMENT OF A LIQUID |
| CN111286330A (en) | 2018-12-06 | 2020-06-16 | 松下知识产权经营株式会社 | Phosphor and semiconductor light emitting device using the same |
| US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
| US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
| JP2020106831A (en) | 2018-12-27 | 2020-07-09 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device |
| US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
| US12152742B2 (en) | 2019-01-18 | 2024-11-26 | Kyocera Sld Laser, Inc. | Laser-based light guide-coupled wide-spectrum light system |
| US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
| US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
| JP7145096B2 (en) | 2019-02-12 | 2022-09-30 | 信越化学工業株式会社 | MICROSTRUCTURE TRANSFER DEVICE, STAMP HEAD UNIT, STAMP COMPONENT FOR TRANSFERRING MICROSTRUCTURE, AND METHOD FOR TRANSFERRING MICROSTRUCTURE INTEGRATED COMPONENT |
| CN119208311A (en) | 2019-03-18 | 2024-12-27 | 英特曼帝克司公司 | LED Filament |
| US11781714B2 (en) | 2019-03-18 | 2023-10-10 | Bridgelux, Inc. | LED-filaments and LED-filament lamps |
| DE112020001955T5 (en) | 2019-04-18 | 2021-12-30 | Nippon Electric Glass Co., Ltd. | WAVELENGTH CONVERSION ELEMENT, METHOD OF MANUFACTURING THE SAME AND LIGHT EMITTING DEVICE |
| WO2020213456A1 (en) | 2019-04-18 | 2020-10-22 | 日本電気硝子株式会社 | Wavelength conversion member, production method therefor, and light-emitting device |
| US11313671B2 (en) | 2019-05-28 | 2022-04-26 | Mitutoyo Corporation | Chromatic confocal range sensing system with enhanced spectrum light source configuration |
| RU2720046C1 (en)* | 2019-07-17 | 2020-04-23 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" | Light-emitting heterostructure with quantum wells of combined profile |
| RU195810U1 (en)* | 2019-09-27 | 2020-02-05 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) | Light emitting diode |
| KR102230355B1 (en) | 2019-09-27 | 2021-03-22 | 강원대학교산학협력단 | Synthesis of white-luminescence material |
| US11561338B2 (en) | 2019-09-30 | 2023-01-24 | Nichia Corporation | Light-emitting module |
| US11112555B2 (en) | 2019-09-30 | 2021-09-07 | Nichia Corporation | Light-emitting module with a plurality of light guide plates and a gap therein |
| JP2021059686A (en) | 2019-10-09 | 2021-04-15 | パナソニックＩｐマネジメント株式会社 | Phosphor and semiconductor light emitting device using the same |
| US12068439B2 (en) | 2019-12-23 | 2024-08-20 | Nippon Electric Glass Co., Ltd. | Wavelength conversion member, light-emitting element, and light-emitting device |
| US12091771B2 (en) | 2020-02-11 | 2024-09-17 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| WO2021162727A1 (en) | 2020-02-11 | 2021-08-19 | SLT Technologies, Inc | Improved group iii nitride substrate, method of making, and method of use |
| US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
| KR20220165280A (en) | 2020-04-14 | 2022-12-14 | 제네럴 일렉트릭 컴퍼니 | Ink compositions and films containing narrowband light emitting phosphor materials |
| US12215265B2 (en) | 2020-04-14 | 2025-02-04 | Dolby Intellectual Property Licensing, Llc | Green-emitting phosphors and devices thereof |
| US11592166B2 (en) | 2020-05-12 | 2023-02-28 | Feit Electric Company, Inc. | Light emitting device having improved illumination and manufacturing flexibility |
| US11876042B2 (en) | 2020-08-03 | 2024-01-16 | Feit Electric Company, Inc. | Omnidirectional flexible light emitting device |
| CN111944350B (en)* | 2020-08-27 | 2022-01-25 | 兰州大学 | YAG Ce-based warm white fluorescent automobile paint and preparation method thereof |
| KR20230059803A (en)* | 2020-09-01 | 2023-05-03 | 제네럴 일렉트릭 컴퍼니 | Element compatible with night vision equipment |
| US11444225B2 (en) | 2020-09-08 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package having a protective coating |
| US11329206B2 (en) | 2020-09-28 | 2022-05-10 | Dominant Opto Technologies Sdn Bhd | Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same |
| KR20230104135A (en) | 2020-11-19 | 2023-07-07 | 니폰 덴키 가라스 가부시키가이샤 | Wavelength conversion member and manufacturing method thereof |
| WO2022164631A1 (en) | 2021-01-26 | 2022-08-04 | Solutia Inc. | Light systems having a diffusive pvb interlayer |
| JP7707616B2 (en) | 2021-04-01 | 2025-07-15 | 日本電気硝子株式会社 | Wavelength conversion member and light emitting device |
| JP2024517092A (en) | 2021-04-13 | 2024-04-19 | ゼネラル・エレクトリック・カンパニイ | Uranium-Based Phosphors and Compositions for Display and Lighting Applications - Patent application |
| JPWO2023008028A1 (en) | 2021-07-29 | 2023-02-02 | ||
| JP7744225B2 (en)* | 2021-12-09 | 2025-09-25 | スタンレー電気株式会社 | Lighting device, vehicle lighting system |
| US12438015B2 (en) | 2021-12-17 | 2025-10-07 | X-Celeprint Limited | Stamps with structured microposts |
| TWI882499B (en)* | 2023-10-30 | 2025-05-01 | 隆達電子股份有限公司 | Light source module |
| CN117602938A (en)* | 2023-12-07 | 2024-02-27 | 江苏师范大学 | Lens type fluorescent composite ceramic for laser illumination and preparation method thereof |
Family Cites Families (257)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US362048A (en)* | 1887-04-26 | watkins | ||
| US215074A (en)* | 1879-05-06 | Improvement in stamp-mills | ||
| US5816677A (en)* | 1905-03-01 | 1998-10-06 | Canon Kabushiki Kaisha | Backlight device for display apparatus |
| US2557049A (en)* | 1946-05-03 | 1951-06-12 | Turner Of Indiana | Power-driven posthole digger |
| US2924732A (en)* | 1957-07-05 | 1960-02-09 | Westinghouse Electric Corp | Area-type light source |
| BE624851A (en) | 1961-05-08 | |||
| NL135101C (en) | 1964-05-14 | |||
| GB1112992A (en)* | 1964-08-18 | 1968-05-08 | Texas Instruments Inc | Three-dimensional integrated circuits and methods of making same |
| US3342308A (en)* | 1966-08-09 | 1967-09-19 | Sperry Rand Corp | Corn processing machine elevator unit structure |
| US3560649A (en) | 1967-05-23 | 1971-02-02 | Tektronix Inc | Cathode ray tube with projection means |
| US3560849A (en) | 1967-08-15 | 1971-02-02 | Aai Corp | Liquid temperature controlled test chamber and transport apparatus for electrical circuit assemblies |
| US3554776A (en)* | 1967-11-24 | 1971-01-12 | Allied Chem | Novel perylenetetracarboxylic diimide compositions |
| US3623857A (en)* | 1968-03-22 | 1971-11-30 | Johns Manville | Glass melting pot |
| US3510732A (en)* | 1968-04-22 | 1970-05-05 | Gen Electric | Solid state lamp having a lens with rhodamine or fluorescent material dispersed therein |
| US3699478A (en)* | 1969-05-26 | 1972-10-17 | Bell Telephone Labor Inc | Display system |
| SE364160B (en)* | 1969-05-26 | 1974-02-11 | Western Electric Co | |
| BE757125A (en)* | 1969-10-06 | 1971-03-16 | Rca Corp | PHOTOGRAPHIC PROCESS FOR FORMING THE LUMINESCENT SCREEN OF A CATHODIC RAY TUBE |
| US3691482A (en)* | 1970-01-19 | 1972-09-12 | Bell Telephone Labor Inc | Display system |
| US3652956A (en)* | 1970-01-23 | 1972-03-28 | Bell Telephone Labor Inc | Color visual display |
| US3699476A (en)* | 1971-03-05 | 1972-10-17 | Rca Corp | Crystal controlled digital logic gate oscillator |
| JPS4717684U (en) | 1971-03-27 | 1972-10-30 | ||
| JPS4839866U (en) | 1971-09-13 | 1973-05-18 | ||
| DE2244397C3 (en) | 1971-09-21 | 1974-07-18 | Tovarna Motornih Vozil Tomos, Koper (Jugoslawien) | Switching device for a multi-stage V-belt change gear |
| JPS48102585A (en)* | 1972-04-04 | 1973-12-22 | ||
| JPS491221A (en) | 1972-04-17 | 1974-01-08 | ||
| JPS5240959B2 (en) | 1972-08-07 | 1977-10-15 | ||
| JPS4979379A (en) | 1972-12-06 | 1974-07-31 | ||
| JPS4985068U (en)* | 1972-11-10 | 1974-07-23 | ||
| FR2248663B1 (en)* | 1972-12-13 | 1978-08-11 | Radiotechnique Compelec | |
| JPS5531825Y2 (en) | 1972-12-27 | 1980-07-29 | ||
| JPS49106283A (en) | 1973-02-09 | 1974-10-08 | ||
| JPS49112577A (en) | 1973-02-23 | 1974-10-26 | ||
| US3819974A (en)* | 1973-03-12 | 1974-06-25 | D Stevenson | Gallium nitride metal-semiconductor junction light emitting diode |
| JPS5640994B2 (en) | 1973-03-22 | 1981-09-25 | ||
| US3842306A (en)* | 1973-06-21 | 1974-10-15 | Gen Electric | Alumina coatings for an electric lamp |
| JPS5043913A (en)* | 1973-08-20 | 1975-04-21 | ||
| JPS5079379A (en) | 1973-11-13 | 1975-06-27 | ||
| JPS5079379U (en)* | 1973-11-24 | 1975-07-09 | ||
| US3882502A (en) | 1974-01-17 | 1975-05-06 | Us Navy | Crt multiple-scan display apparatus and method providing target discrimination |
| JPS5713156B2 (en)* | 1974-02-28 | 1982-03-15 | ||
| US4123161A (en)* | 1974-06-18 | 1978-10-31 | Pappas George J | Apparatus for and method of examining light |
| JPS5240959A (en) | 1975-09-29 | 1977-03-30 | Toshiba Corp | Color picture tube |
| JPS5245181A (en) | 1975-10-07 | 1977-04-09 | Matsushita Electric Works Ltd | Chain |
| US4001628A (en)* | 1976-02-25 | 1977-01-04 | Westinghouse Electric Corporation | Low-pressure fluorescent discharge device which utilizes both inorganic and organic phosphors |
| US4143297A (en)* | 1976-03-08 | 1979-03-06 | Brown, Boveri & Cie Aktiengesellschaft | Information display panel with zinc sulfide powder electroluminescent layers |
| JPS537153U (en) | 1976-07-05 | 1978-01-21 | ||
| JPS537153A (en) | 1976-07-09 | 1978-01-23 | Fujitsu Ltd | Program loop detection-recording system |
| GB1589964A (en)* | 1976-09-03 | 1981-05-20 | Johnson Matthey Co Ltd | Luminescent materials |
| NL7707008A (en)* | 1977-06-24 | 1978-12-28 | Philips Nv | LUMINESCENCE SCREEN. |
| JPS5441660A (en) | 1977-09-09 | 1979-04-03 | Matsushita Electric Works Ltd | Timer |
| JPS5332545Y2 (en) | 1977-09-13 | 1978-08-11 | ||
| FR2407588A1 (en) | 1977-10-28 | 1979-05-25 | Cit Alcatel | POWER BAR REALIZATION PROCESS |
| NL7806828A (en)* | 1978-06-26 | 1979-12-28 | Philips Nv | LUMINESCENCE SCREEN. |
| JPS555533U (en)* | 1978-06-26 | 1980-01-14 | ||
| JPS583420B2 (en) | 1978-06-27 | 1983-01-21 | 株式会社リコー | matrix drive circuit |
| JPS556687A (en)* | 1978-06-29 | 1980-01-18 | Handotai Kenkyu Shinkokai | Traffic use display |
| US4271408A (en)* | 1978-10-17 | 1981-06-02 | Stanley Electric Co., Ltd. | Colored-light emitting display |
| DE3117571A1 (en)* | 1981-05-04 | 1982-11-18 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | LUMINESCENCE SEMICONDUCTOR COMPONENT |
| CA1192919A (en) | 1981-12-21 | 1985-09-03 | Bernard J. Finn | Vehicle wheel suspension |
| JPS5930107U (en) | 1982-08-19 | 1984-02-24 | スタンレー電気株式会社 | Light guide plate with color filter |
| NL8203543A (en) | 1982-09-13 | 1984-04-02 | Oce Nederland Bv | COPIER. |
| JPS5950445A (en) | 1982-09-16 | 1984-03-23 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Xerographic material |
| JPS5950455U (en)* | 1982-09-24 | 1984-04-03 | 三洋電機株式会社 | light emitting diode device |
| JPS5967673A (en)* | 1982-10-12 | 1984-04-17 | Toyo Commun Equip Co Ltd | Light emitting diode for surface illumination |
| NL8205044A (en)* | 1982-12-30 | 1984-07-16 | Philips Nv | LOW-PRESSURE MERCURY DISCHARGE LAMP. |
| JPS6073580A (en)* | 1983-09-29 | 1985-04-25 | 東芝ライテック株式会社 | display device |
| JPS6081878A (en) | 1983-10-11 | 1985-05-09 | Shinyoushiya:Kk | Emitting light color controlling method of composite light emitting diode |
| US4550256A (en)* | 1983-10-17 | 1985-10-29 | At&T Bell Laboratories | Visual display system utilizing high luminosity single crystal garnet material |
| JPS60185457A (en) | 1984-03-05 | 1985-09-20 | Canon Inc | fax machine |
| US4857228A (en)* | 1984-04-24 | 1989-08-15 | Sunstone Inc. | Phosphors and methods of preparing the same |
| JPS60185457U (en)* | 1984-05-19 | 1985-12-09 | セイレイ工業株式会社 | Branching machine engine stop sensor layout structure |
| JPS61158606A (en) | 1984-12-28 | 1986-07-18 | 株式会社小糸製作所 | Lighting apparatus |
| NL8502025A (en)* | 1985-07-15 | 1987-02-02 | Philips Nv | LOW-PRESSURE MERCURY DISCHARGE LAMP. |
| JPS6220237U (en)* | 1985-07-23 | 1987-02-06 | ||
| JPS62109185U (en)* | 1985-12-27 | 1987-07-11 | ||
| NL8600023A (en)* | 1986-01-08 | 1987-08-03 | Philips Nv | LOW-PRESSURE MERCURY DISCHARGE LAMP. |
| JPS62167398A (en) | 1986-01-17 | 1987-07-23 | 花王株式会社 | High density granular detergent composition |
| JPS62189770A (en) | 1986-02-15 | 1987-08-19 | Fumio Inaba | Junction-type semiconductor light emitting device |
| JPS62232827A (en) | 1986-03-31 | 1987-10-13 | 松下電器産業株式会社 | Operation panel drive circuit with lighting element |
| EP0288014B1 (en) | 1987-04-20 | 1998-08-05 | Fuji Photo Film Co., Ltd. | Cassette, device and method of erasing a stimulable phosphor sheet |
| JPH079998B2 (en)* | 1988-01-07 | 1995-02-01 | 科学技術庁無機材質研究所長 | Cubic boron nitride P-n junction light emitting device |
| JPS63291980A (en) | 1987-05-25 | 1988-11-29 | Canon Inc | Ferroelectric liquid crystal element |
| JPS63299186A (en)* | 1987-05-29 | 1988-12-06 | Hitachi Ltd | light emitting element |
| US4929965A (en)* | 1987-09-02 | 1990-05-29 | Alps Electric Co. | Optical writing head |
| JPH01189695A (en)* | 1988-01-25 | 1989-07-28 | Yokogawa Electric Corp | Led display device |
| DE3804293A1 (en)* | 1988-02-12 | 1989-08-24 | Philips Patentverwaltung | ARRANGEMENT WITH AN ELECTROLUMINESCENCE OR LASER DIODE |
| JP2594609B2 (en) | 1988-04-08 | 1997-03-26 | 富士通株式会社 | Backlighting structure of display panel |
| JPH01260707A (en) | 1988-04-11 | 1989-10-18 | Idec Izumi Corp | Device for emitting white light |
| JPH0218973A (en)* | 1988-07-07 | 1990-01-23 | Shibasoku Co Ltd | Testing device for light emitting diode |
| US5043716A (en)* | 1988-07-14 | 1991-08-27 | Adaptive Micro Systems, Inc. | Electronic display with lens matrix |
| JPH0291980A (en) | 1988-09-29 | 1990-03-30 | Toshiba Lighting & Technol Corp | solid state light emitting device |
| JP2770350B2 (en) | 1988-10-20 | 1998-07-02 | 富士通株式会社 | Liquid crystal display |
| US5034965A (en) | 1988-11-11 | 1991-07-23 | Matsushita Electric Industrial Co., Ltd. | Efficient coding method and its decoding method |
| JPH02202073A (en)* | 1989-01-31 | 1990-08-10 | Hitachi Chem Co Ltd | Electronic component |
| JP2704181B2 (en)* | 1989-02-13 | 1998-01-26 | 日本電信電話株式会社 | Method for growing compound semiconductor single crystal thin film |
| JPH02271304A (en)* | 1989-04-12 | 1990-11-06 | Seiko Epson Corp | Lighting device for display body |
| US4992704A (en) | 1989-04-17 | 1991-02-12 | Basic Electronics, Inc. | Variable color light emitting diode |
| JPH0324692A (en) | 1989-06-21 | 1991-02-01 | Fuji Electric Co Ltd | Automatic lending machine control device |
| JPH0324692U (en) | 1989-07-18 | 1991-03-14 | ||
| US5221984A (en)* | 1989-09-18 | 1993-06-22 | Kabushiki Kaisha Toshiba | Optical data transmission device with parallel channel paths for arrayed optical elements |
| JPH03152898A (en) | 1989-11-09 | 1991-06-28 | Hitachi Maxell Ltd | Dispersed EL element |
| US5118985A (en)* | 1989-12-29 | 1992-06-02 | Gte Products Corporation | Fluorescent incandescent lamp |
| JP2995664B2 (en)* | 1990-05-17 | 1999-12-27 | 小糸工業株式会社 | Information display device |
| NL9001193A (en)* | 1990-05-23 | 1991-12-16 | Koninkl Philips Electronics Nv | RADIATION-EMITING SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR DEVICE. |
| US5368673A (en) | 1990-06-28 | 1994-11-29 | Daihen Corporation | Joining method for joining electrically ceramic bodies and a joining apparatus and joining agent for use in the joining method |
| JP2506223B2 (en) | 1990-06-28 | 1996-06-12 | トリニティ工業株式会社 | Automatic painting equipment |
| JPH0463162A (en) | 1990-06-29 | 1992-02-28 | Suzuki Motor Corp | Coating device |
| US5257049A (en) | 1990-07-03 | 1993-10-26 | Agfa-Gevaert N.V. | LED exposure head with overlapping electric circuits |
| JPH0480286A (en) | 1990-07-23 | 1992-03-13 | Matsushita Electron Corp | Fluorescent high-pressure mercury lamp |
| JP2924125B2 (en) | 1990-07-30 | 1999-07-26 | 東レ株式会社 | Polyester fiber for nonwoven fabric |
| DE9013615U1 (en)* | 1990-09-28 | 1990-12-06 | AEG Niederspannungstechnik GmbH & Co KG, 24534 Neumünster | Electroluminescence or laser diode |
| JPH0463162U (en)* | 1990-10-02 | 1992-05-29 | ||
| JPH0463163U (en) | 1990-10-04 | 1992-05-29 | ||
| KR940002570B1 (en)* | 1990-11-02 | 1994-03-25 | 삼성전관 주식회사 | White light emitting phosphor |
| JPH04175265A (en)* | 1990-11-07 | 1992-06-23 | Sumitomo Electric Ind Ltd | Colored translucent YAG sintered body and its manufacturing method |
| JP2593960B2 (en)* | 1990-11-29 | 1997-03-26 | シャープ株式会社 | Compound semiconductor light emitting device and method of manufacturing the same |
| JP3160914B2 (en) | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | Gallium nitride based compound semiconductor laser diode |
| JPH04234481A (en)* | 1990-12-28 | 1992-08-24 | Matsushita Electron Corp | Fluorescent high-pressure mercury-vapor lamp |
| US5202777A (en)* | 1991-05-31 | 1993-04-13 | Hughes Aircraft Company | Liquid crystal light value in combination with cathode ray tube containing a far-red emitting phosphor |
| FR2677139B1 (en)* | 1991-05-31 | 1994-03-18 | Hughes Aircraft Cy | LUMINESCENCE SUBSTANCE EMITTING IN FAR RED, FOR CATHODE RAY TUBES. |
| JPH0543913A (en) | 1991-08-08 | 1993-02-23 | Mitsubishi Materials Corp | Fe base sintered alloy valve seat with extremely low attackability against object |
| JPH0563068A (en) | 1991-08-30 | 1993-03-12 | Shin Etsu Handotai Co Ltd | Wafer basket |
| JPH0579379A (en) | 1991-09-19 | 1993-03-30 | Hitachi Ltd | Control method |
| JP2666228B2 (en)* | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | Gallium nitride based compound semiconductor light emitting device |
| US5306662A (en)* | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
| JP2540791B2 (en) | 1991-11-08 | 1996-10-09 | 日亜化学工業株式会社 | A method for manufacturing a p-type gallium nitride-based compound semiconductor. |
| JPH05152609A (en)* | 1991-11-25 | 1993-06-18 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH05142424A (en) | 1991-11-26 | 1993-06-11 | Nec Kansai Ltd | Plane light emitting plate |
| US5208462A (en)* | 1991-12-19 | 1993-05-04 | Allied-Signal Inc. | Wide bandwidth solid state optical source |
| ES2100275T3 (en)* | 1992-01-07 | 1997-06-16 | Philips Electronics Nv | DISCHARGE LAMP IN LOW PRESSURE MERCURY. |
| JPH0560368U (en)* | 1992-01-27 | 1993-08-10 | 恵助 山下 | chopsticks |
| JPH0563068U (en) | 1992-01-31 | 1993-08-20 | シャープ株式会社 | Resin-sealed light emitter |
| JPH05226676A (en) | 1992-02-14 | 1993-09-03 | Sharp Corp | Semiconductor device |
| JP3047600B2 (en) | 1992-03-04 | 2000-05-29 | 株式会社イナックス | Control method of bubble bath apparatus with filtration device |
| JPH0613659A (en)* | 1992-04-30 | 1994-01-21 | Takiron Co Ltd | Luminance adjustment device of light emitting diode |
| JPH05331584A (en) | 1992-06-02 | 1993-12-14 | Toyota Motor Corp | High elasticity / high strength aluminum alloy |
| JP3365787B2 (en)* | 1992-06-18 | 2003-01-14 | シャープ株式会社 | LED chip mounting parts |
| JP2917742B2 (en) | 1992-07-07 | 1999-07-12 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device and method of manufacturing the same |
| JPH0629576A (en)* | 1992-07-09 | 1994-02-04 | Sharp Corp | Light-emitting display element |
| JPH0627327A (en) | 1992-07-13 | 1994-02-04 | Seiko Epson Corp | Lighting equipment |
| EP0579897B1 (en) | 1992-07-23 | 2003-10-15 | Toyoda Gosei Co., Ltd. | Light-emitting device of gallium nitride compound semiconductor |
| WO1994003931A1 (en)* | 1992-08-07 | 1994-02-17 | Asahi Kasei Kogyo Kabushiki Kaisha | Nitride based semiconductor device and manufacture thereof |
| JPH0669546A (en)* | 1992-08-21 | 1994-03-11 | Asahi Chem Ind Co Ltd | Light-emitting diode |
| US5334855A (en)* | 1992-08-24 | 1994-08-02 | Motorola, Inc. | Diamond/phosphor polycrystalline led and display |
| JPH0682633A (en) | 1992-09-03 | 1994-03-25 | Chuo Musen Kk | Surface light source |
| JP2842739B2 (en) | 1992-09-14 | 1999-01-06 | 富士通株式会社 | Surface light source unit and liquid crystal display device |
| SG44001A1 (en)* | 1992-09-23 | 1997-11-14 | Philips Electronics Nv | Low-pressure mercury discharge lamp |
| JPH06139973A (en) | 1992-10-26 | 1994-05-20 | Matsushita Electric Ind Co Ltd | Flat type image display device |
| JP3284208B2 (en) | 1992-11-17 | 2002-05-20 | 東ソー株式会社 | Backlight |
| JP2560963B2 (en) | 1993-03-05 | 1996-12-04 | 日亜化学工業株式会社 | Gallium nitride compound semiconductor light emitting device |
| US5578839A (en) | 1992-11-20 | 1996-11-26 | Nichia Chemical Industries, Ltd. | Light-emitting gallium nitride-based compound semiconductor device |
| US5317348A (en)* | 1992-12-01 | 1994-05-31 | Knize Randall J | Full color solid state laser projector system |
| JP2711205B2 (en) | 1993-01-20 | 1998-02-10 | 鐘紡株式会社 | Composite foamed polyester sheet |
| JP3467788B2 (en) | 1993-02-09 | 2003-11-17 | 東ソー株式会社 | Backlight |
| JP2932467B2 (en) | 1993-03-12 | 1999-08-09 | 日亜化学工業株式会社 | Gallium nitride based compound semiconductor light emitting device |
| JPH07321407A (en) | 1993-04-05 | 1995-12-08 | Fuji Electric Co Ltd | Resin-sealed laser diode device |
| JPH06296043A (en)* | 1993-04-08 | 1994-10-21 | Matsushita Electric Ind Co Ltd | Light-emitting diode |
| JPH06314826A (en)* | 1993-04-28 | 1994-11-08 | Victor Co Of Japan Ltd | Light emitting diode array |
| JPH0742152A (en) | 1993-07-29 | 1995-02-10 | Hitachi Constr Mach Co Ltd | Pile hammer |
| US5514179A (en)* | 1993-08-10 | 1996-05-07 | Brennan; H. George | Modular facial implant system |
| JP2584562Y2 (en) | 1993-09-01 | 1998-11-05 | ダイハツ工業株式会社 | Rack guide for rack and pinion steering |
| JPH0799345A (en)* | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | Light emitting diode |
| JPH07114904A (en) | 1993-10-18 | 1995-05-02 | Hitachi Ltd | Fluorescent discharge lamp for backlight source |
| JPH07120754A (en)* | 1993-10-26 | 1995-05-12 | Fujikura Ltd | Illumination module |
| JPH0732638U (en) | 1993-11-15 | 1995-06-16 | ミネベア株式会社 | Planar light source device |
| JPH07176794A (en)* | 1993-12-17 | 1995-07-14 | Nichia Chem Ind Ltd | Surface light source |
| JP2606025Y2 (en)* | 1993-12-24 | 2000-09-11 | 日亜化学工業株式会社 | Light emitting diode element |
| JP3190774B2 (en)* | 1993-12-24 | 2001-07-23 | 株式会社東芝 | Lead frame for LED lamp and LED display device |
| JPH07193281A (en) | 1993-12-27 | 1995-07-28 | Mitsubishi Materials Corp | Infrared-visible conversion light emitting diode with low directivity |
| EP0664586A1 (en) | 1994-01-20 | 1995-07-26 | Fuji Electric Co., Ltd. | Resin-sealed laser diode device |
| US5505986A (en) | 1994-02-14 | 1996-04-09 | Planar Systems, Inc. | Multi-source reactive deposition process for the preparation of blue light emitting phosphor layers for AC TFEL devices |
| JPH07225378A (en)* | 1994-02-15 | 1995-08-22 | Asahi Optical Co Ltd | LCD lighting device |
| JPH07235207A (en) | 1994-02-21 | 1995-09-05 | Copal Co Ltd | Back light |
| JPH07248495A (en)* | 1994-03-14 | 1995-09-26 | Hitachi Ltd | Liquid crystal display |
| JPH07253594A (en)* | 1994-03-15 | 1995-10-03 | Fujitsu Ltd | Display device |
| JPH07263748A (en) | 1994-03-22 | 1995-10-13 | Toyoda Gosei Co Ltd | Group III nitride semiconductor light emitting device and manufacturing method thereof |
| US5640216A (en)* | 1994-04-13 | 1997-06-17 | Hitachi, Ltd. | Liquid crystal display device having video signal driving circuit mounted on one side and housing |
| JP3329573B2 (en) | 1994-04-18 | 2002-09-30 | 日亜化学工業株式会社 | LED display |
| JPH07307491A (en)* | 1994-05-11 | 1995-11-21 | Mitsubishi Cable Ind Ltd | Led aggregate module and its manufacture |
| JP2979961B2 (en) | 1994-06-14 | 1999-11-22 | 日亜化学工業株式会社 | Full color LED display |
| JP3116727B2 (en)* | 1994-06-17 | 2000-12-11 | 日亜化学工業株式会社 | Planar light source |
| JP3227059B2 (en)* | 1994-06-21 | 2001-11-12 | 株式会社小糸製作所 | Vehicle lighting |
| JPH0863119A (en) | 1994-08-01 | 1996-03-08 | Motorola Inc | All-color image display device using monochormatic led |
| JPH0854839A (en)* | 1994-08-09 | 1996-02-27 | Sony Corp | Color image display device |
| JPH0864860A (en)* | 1994-08-17 | 1996-03-08 | Mitsubishi Materials Corp | Infrared-to-visible conversion blue light emitting diode of high color purity |
| JP3309939B2 (en) | 1994-09-09 | 2002-07-29 | 日亜化学工業株式会社 | Light emitting diode |
| JPH08130329A (en)* | 1994-10-31 | 1996-05-21 | Nichia Chem Ind Ltd | LED lighting |
| US5777350A (en)* | 1994-12-02 | 1998-07-07 | Nichia Chemical Industries, Ltd. | Nitride semiconductor light-emitting device |
| JP3127195B2 (en)* | 1994-12-06 | 2001-01-22 | シャープ株式会社 | Light emitting device and method of manufacturing the same |
| US5710628A (en)* | 1994-12-12 | 1998-01-20 | Visible Genetics Inc. | Automated electrophoresis and fluorescence detection apparatus and method |
| JPH08170077A (en) | 1994-12-19 | 1996-07-02 | Hitachi Ltd | Phosphor, manufacturing method thereof, light emitting screen and cathode ray tube using the same |
| JP2735057B2 (en) | 1994-12-22 | 1998-04-02 | 日亜化学工業株式会社 | Nitride semiconductor light emitting device |
| KR100399460B1 (en)* | 1995-01-30 | 2003-12-24 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Lighting equipment |
| JP3542677B2 (en)* | 1995-02-27 | 2004-07-14 | セイコーエプソン株式会社 | Resin-sealed semiconductor device and method of manufacturing the same |
| JPH08321918A (en) | 1995-03-22 | 1996-12-03 | Canon Inc | Light guide body, illumination device having the light guide body, and information processing apparatus having the illumination device |
| US5623181A (en)* | 1995-03-23 | 1997-04-22 | Iwasaki Electric Co., Ltd. | Multi-layer type light emitting device |
| JPH08293825A (en)* | 1995-04-21 | 1996-11-05 | Fujitsu Ltd | Space diversity receiver |
| US5630741A (en)* | 1995-05-08 | 1997-05-20 | Advanced Vision Technologies, Inc. | Fabrication process for a field emission display cell structure |
| US5594751A (en)* | 1995-06-26 | 1997-01-14 | Optical Concepts, Inc. | Current-apertured vertical cavity laser |
| US5825113A (en)* | 1995-07-05 | 1998-10-20 | Electric Power Research Institute, Inc. | Doubly salient permanent magnet machine with field weakening (or boosting) capability |
| JPH0927642A (en)* | 1995-07-13 | 1997-01-28 | Clarion Co Ltd | Lighting equipment |
| JP3120703B2 (en)* | 1995-08-07 | 2000-12-25 | 株式会社村田製作所 | Conductive paste and multilayer ceramic electronic components |
| JPH0964325A (en)* | 1995-08-23 | 1997-03-07 | Sony Corp | Solid-state imaging device and method of manufacturing the same |
| US5798537A (en)* | 1995-08-31 | 1998-08-25 | Kabushiki Kaisha Toshiba | Blue light-emitting device |
| US5949751A (en)* | 1995-09-07 | 1999-09-07 | Pioneer Electronic Corporation | Optical recording medium and a method for reproducing information recorded from same |
| JPH09116225A (en)* | 1995-10-20 | 1997-05-02 | Hitachi Ltd | Semiconductor light emitting device |
| JP3612693B2 (en)* | 1995-10-31 | 2005-01-19 | 岩崎電気株式会社 | Light emitting diode array and light emitting diode |
| JPH09130546A (en)* | 1995-11-01 | 1997-05-16 | Iwasaki Electric Co Ltd | Light emitting diode for linear light source |
| JP3476611B2 (en)* | 1995-12-14 | 2003-12-10 | 日亜化学工業株式会社 | Multicolor light emitting device and display device using the same |
| US5870797A (en)* | 1996-02-23 | 1999-02-16 | Anderson; Kent George | Vacuum cleaning system |
| US6600175B1 (en)* | 1996-03-26 | 2003-07-29 | Advanced Technology Materials, Inc. | Solid state white light emitter and display using same |
| US5949182A (en)* | 1996-06-03 | 1999-09-07 | Cornell Research Foundation, Inc. | Light-emitting, nanometer scale, micromachined silicon tips |
| KR100537349B1 (en) | 1996-06-26 | 2006-02-28 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | Light-emitting semiconductor component with luminescence conversion element |
| DE19638667C2 (en) | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mixed-color light-emitting semiconductor component with luminescence conversion element |
| US5684309A (en)* | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| US6608332B2 (en) | 1996-07-29 | 2003-08-19 | Nichia Kagaku Kogyo Kabushiki Kaisha | Light emitting device and display |
| TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
| JPH1036835A (en) | 1996-07-29 | 1998-02-10 | Nichia Chem Ind Ltd | Photoluminescent phosphor |
| IE820328L (en) | 1996-08-15 | 1983-08-16 | Eaton Corp | Illumination system |
| US6004001A (en)* | 1996-09-12 | 1999-12-21 | Vdo Adolf Schindling Ag | Illumination for a display |
| US5781363A (en)* | 1996-10-15 | 1998-07-14 | International Business Machines Corporation | Servo-free velocity estimator for coil driven actuator arm in a data storage drive |
| US5966393A (en) | 1996-12-13 | 1999-10-12 | The Regents Of The University Of California | Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications |
| JP4271747B2 (en)* | 1997-07-07 | 2009-06-03 | 株式会社朝日ラバー | Translucent coating material for light emitting diode and fluorescent color light source |
| US5847507A (en)* | 1997-07-14 | 1998-12-08 | Hewlett-Packard Company | Fluorescent dye added to epoxy of light emitting diode lens |
| JPH1139917A (en)* | 1997-07-22 | 1999-02-12 | Hewlett Packard Co <Hp> | High color rendering light source |
| US6340824B1 (en)* | 1997-09-01 | 2002-01-22 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device including a fluorescent material |
| JP3541709B2 (en) | 1998-02-17 | 2004-07-14 | 日亜化学工業株式会社 | Method of forming light emitting diode |
| US6501091B1 (en)* | 1998-04-01 | 2002-12-31 | Massachusetts Institute Of Technology | Quantum dot white and colored light emitting diodes |
| US6105200A (en)* | 1998-04-21 | 2000-08-22 | Cooper; Byron W. | Can top cleaning device |
| US5959316A (en)* | 1998-09-01 | 1999-09-28 | Hewlett-Packard Company | Multiple encapsulation of phosphor-LED devices |
| US6798537B1 (en)* | 1999-01-27 | 2004-09-28 | The University Of Delaware | Digital color halftoning with generalized error diffusion vector green-noise masks |
| US6575930B1 (en)* | 1999-03-12 | 2003-06-10 | Medrad, Inc. | Agitation devices and dispensing systems incorporating such agitation devices |
| US6513949B1 (en)* | 1999-12-02 | 2003-02-04 | Koninklijke Philips Electronics N.V. | LED/phosphor-LED hybrid lighting systems |
| US6538371B1 (en)* | 2000-03-27 | 2003-03-25 | The General Electric Company | White light illumination system with improved color output |
| WO2002032231A1 (en)* | 2000-10-19 | 2002-04-25 | Edens, Luppo | Protein hydrolysates |
| JP2002270020A (en)* | 2001-03-08 | 2002-09-20 | Casio Comput Co Ltd | Light source device |
| US6536371B2 (en)* | 2001-08-01 | 2003-03-25 | One World Technologies, Inc. | Rotary direction indicator |
| WO2005038935A1 (en)* | 2003-10-15 | 2005-04-28 | Nichia Corporation | Light-emitting device |
| US7318651B2 (en)* | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
| US7083302B2 (en)* | 2004-03-24 | 2006-08-01 | J. S. Technology Co., Ltd. | White light LED assembly |
| KR100655894B1 (en)* | 2004-05-06 | 2006-12-08 | 서울옵토디바이스주식회사 | Wavelength conversion light emitting device with excellent color temperature and color rendering |
| US7546032B2 (en) | 2004-09-30 | 2009-06-09 | Casio Computer Co., Ltd. | Electronic camera having light-emitting unit |
| JP4679183B2 (en)* | 2005-03-07 | 2011-04-27 | シチズン電子株式会社 | Light emitting device and lighting device |
| JP5240959B2 (en) | 2005-11-16 | 2013-07-17 | 国立大学法人 香川大学 | Drug and production method |
| JP4839866B2 (en) | 2006-02-02 | 2011-12-21 | トヨタ自動車株式会社 | Vehicle side structure |
| WO2007111368A1 (en) | 2006-03-29 | 2007-10-04 | Tti Ellebeau, Inc. | Iontophoretic apparatus |
| JP4717684B2 (en) | 2006-03-30 | 2011-07-06 | 富士通テレコムネットワークス株式会社 | Capacitor charger |
| US20080144821A1 (en) | 2006-10-26 | 2008-06-19 | Marvell International Ltd. | Secure video distribution |
| KR100930171B1 (en) | 2006-12-05 | 2009-12-07 | 삼성전기주식회사 | White light emitting device and white light source module using same |
| JP5079379B2 (en) | 2007-04-16 | 2012-11-21 | 長谷川香料株式会社 | Production of purified chlorogenic acids with reduced secondary precipitation |
| JP5226676B2 (en) | 2007-05-22 | 2013-07-03 | 日本アビオニクス株式会社 | Data recording / reproducing device |
| US8119028B2 (en) | 2007-11-14 | 2012-02-21 | Cree, Inc. | Cerium and europium doped single crystal phosphors |
| US8415870B2 (en)* | 2008-08-28 | 2013-04-09 | Panasonic Corporation | Semiconductor light emitting device and backlight source, backlight source system, display device and electronic device using the same |
| JP5331584B2 (en) | 2009-06-12 | 2013-10-30 | 株式会社フジクラ | Pressure sensor array, pressure sensor array package, and pressure sensor module and electronic component |
| JP5441660B2 (en) | 2009-12-15 | 2014-03-12 | 日本特殊陶業株式会社 | Capacitor manufacturing method and wiring board with built-in capacitor |
| JP5343885B2 (en) | 2010-02-16 | 2013-11-13 | 住友電装株式会社 | Waterproof terminal fittings and waterproof connectors |
| EP2644942B1 (en) | 2010-11-24 | 2017-05-03 | Toyota Jidosha Kabushiki Kaisha | Vehicular power transmission device |
- 1997
- 1997-07-28TWTW86110739Apatent/TW383508B/ennot_activeIP Right Cessation
- 1997-07-29SGSG10201502321UApatent/SG10201502321UA/enunknown
- 1997-07-29CACA 2481364patent/CA2481364C/ennot_activeExpired - Lifetime
- 1997-07-29BRBRPI9715362-1Apatent/BR9715362B1/ennot_activeIP Right Cessation
- 1997-07-29EPEP10184754.9Apatent/EP2276080B2/ennot_activeExpired - Lifetime
- 1997-07-29PTPT97933047Tpatent/PT936682E/enunknown
- 1997-07-29CNCNB2006100958389Apatent/CN100424902C/ennot_activeExpired - Lifetime
- 1997-07-29KRKR10-1999-7000775Apatent/KR100517271B1/ennot_activeExpired - Lifetime
- 1997-07-29DKDK10184754.9Tpatent/DK2276080T3/enactive
- 1997-07-29SGSG2010071504Apatent/SG182856A1/enunknown
- 1997-07-29CNCNB031549373Apatent/CN1253949C/ennot_activeExpired - Lifetime
- 1997-07-29KRKR10-2002-7001341Apatent/KR100434871B1/ennot_activeExpired - Lifetime
- 1997-07-29CACA002262136Apatent/CA2262136C/ennot_activeExpired - Lifetime
- 1997-07-29DEDE1997602929patent/DE69702929T4/ennot_activeExpired - Lifetime
- 1997-07-29ATAT97933047Tpatent/ATE195831T1/enactive
- 1997-07-29PTPT101847549Tpatent/PT2276080E/enunknown
- 1997-07-29DKDK00101746.6Tpatent/DK1017111T3/enactive
- 1997-07-29WOPCT/JP1997/002610patent/WO1998005078A1/ennot_activeApplication Discontinuation
- 1997-07-29DKDK10158437.3Tpatent/DK2194590T3/enactive
- 1997-07-29EPEP20100158449patent/EP2197056A3/ennot_activeWithdrawn
- 1997-07-29ESES10158416.7Tpatent/ES2544690T3/ennot_activeExpired - Lifetime
- 1997-07-29ESES97933047Tpatent/ES2148997T5/ennot_activeExpired - Lifetime
- 1997-07-29EPEP10158437.3Apatent/EP2194590B1/ennot_activeExpired - Lifetime
- 1997-07-29KRKR10-2002-7001342Apatent/KR100524117B1/ennot_activeExpired - Lifetime
- 1997-07-29CNCNB031549381Apatent/CN1249825C/ennot_activeExpired - Lifetime
- 1997-07-29ESES10158455.5Tpatent/ES2569616T3/ennot_activeExpired - Lifetime
- 1997-07-29KRKR1020027001340Apatent/KR100549902B1/ennot_activeExpired - Lifetime
- 1997-07-29DKDK10158416.7Tpatent/DK2197053T3/enactive
- 1997-07-29EPEP20000102678patent/EP1017112A3/ennot_activeWithdrawn
- 1997-07-29DEDE29724458Upatent/DE29724458U1/ennot_activeExpired - Lifetime
- 1997-07-29CNCN97196762Apatent/CN1133218C/ennot_activeExpired - Lifetime
- 1997-07-29SGSG2010071520Apatent/SG182857A1/enunknown
- 1997-07-29ESES10158437.3Tpatent/ES2576053T3/ennot_activeExpired - Lifetime
- 1997-07-29SGSG200006374Apatent/SG115349A1/enunknown
- 1997-07-29BRBR9715365Apatent/BR9715365B1/enactiveIP Right Grant
- 1997-07-29PTPT4001378Tpatent/PT1429398E/enunknown
- 1997-07-29CNCNB031549365Apatent/CN1249824C/ennot_activeExpired - Lifetime
- 1997-07-29ESES10158429.0Tpatent/ES2569615T3/ennot_activeExpired - Lifetime
- 1997-07-29USUS08/902,725patent/US5998925A/ennot_activeExpired - Lifetime
- 1997-07-29EPEP10158455.5Apatent/EP2197057B1/ennot_activeExpired - Lifetime
- 1997-07-29DKDK10158422.5Tpatent/DK2197054T3/enactive
- 1997-07-29ESES10158422.5Tpatent/ES2576052T3/ennot_activeExpired - Lifetime
- 1997-07-29ESES00101746.6Tpatent/ES2553570T3/ennot_activeExpired - Lifetime
- 1997-07-29ESES10184754.9Tpatent/ES2545981T3/ennot_activeExpired - Lifetime
- 1997-07-29CNCNB2006100958374Apatent/CN100424901C/ennot_activeExpired - Lifetime
- 1997-07-29JPJP50869398Apatent/JP3503139B2/ennot_activeExpired - Lifetime
- 1997-07-29DKDK10158455.5Tpatent/DK2197057T3/enactive
- 1997-07-29EPEP10158422.5Apatent/EP2197054B1/ennot_activeExpired - Lifetime
- 1997-07-29CNCNB031595952Apatent/CN1240144C/ennot_activeExpired - Lifetime
- 1997-07-29BRBRPI9715363Apatent/BRPI9715363B1/enactiveIP Right Grant
- 1997-07-29BRBRPI9715264Apatent/BRPI9715264B1/enactiveIP Right Grant
- 1997-07-29CNCNB200610095836XApatent/CN100449807C/ennot_activeExpired - Lifetime
- 1997-07-29EPEP04001378.1Apatent/EP1429398B1/ennot_activeExpired - Lifetime
- 1997-07-29DEDE29724642Upatent/DE29724642U1/ennot_activeExpired - Lifetime
- 1997-07-29PTPT101746Tpatent/PT1017111E/enunknown
- 1997-07-29SGSG2010071512Apatent/SG182008A1/enunknown
- 1997-07-29DEDE1997224773patent/DE29724773U1/ennot_activeExpired - Lifetime
- 1997-07-29MYMYPI9703464patent/MY125748A/enunknown
- 1997-07-29EPEP97933047Apatent/EP0936682B9/ennot_activeExpired - Lifetime
- 1997-07-29BRBRPI9715263-3B1Apatent/BR9715263B1/enactiveIP Right Grant
- 1997-07-29ESES04001378.1Tpatent/ES2550823T3/ennot_activeExpired - Lifetime
- 1997-07-29EPEP20000114764patent/EP1045458A3/ennot_activeWithdrawn
- 1997-07-29DKDK10158429.0Tpatent/DK2197055T3/enactive
- 1997-07-29EPEP00101746.6Apatent/EP1017111B1/ennot_activeExpired - Lifetime
- 1997-07-29DKDK04001378.1Tpatent/DK1429398T3/enactive
- 1997-07-29CACA 2479538patent/CA2479538C/ennot_activeExpired - Lifetime
- 1997-07-29PTPT101584167Tpatent/PT2197053E/enunknown
- 1997-07-29EPEP10158429.0Apatent/EP2197055B1/ennot_activeExpired - Lifetime
- 1997-07-29DEDE29724670Upatent/DE29724670U1/ennot_activeExpired - Lifetime
- 1997-07-29CACA 2479842patent/CA2479842C/ennot_activeExpired - Lifetime
- 1997-07-29EPEP04001377.3Apatent/EP1429397B1/ennot_activeExpired - Lifetime
- 1997-07-29DEDE1997224764patent/DE29724764U1/ennot_activeExpired - Lifetime
- 1997-07-29KRKR1020057007162Apatent/KR100549906B1/ennot_activeExpired - Lifetime
- 1997-07-29EPEP20020017698patent/EP1271664B1/ennot_activeExpired - Lifetime
- 1997-07-29DKDK97933047Tpatent/DK0936682T4/enactive
- 1997-07-29CNCNB031549357Apatent/CN1249823C/ennot_activeExpired - Lifetime
- 1997-07-29BRBR9715361Apatent/BR9715361B1/enactiveIP Right Grant
- 1997-07-29CNCNB2006100069515Apatent/CN100382349C/ennot_activeExpired - Lifetime
- 1997-07-29EPEP10158416.7Apatent/EP2197053B1/ennot_activeRevoked
- 1997-07-29AUAU36355/97Apatent/AU720234B2/ennot_activeExpired
- 1997-07-29CNCNB031549349Apatent/CN1249822C/ennot_activeExpired - Lifetime
- 1997-07-29KRKR10-2002-7012950Apatent/KR100491481B1/ennot_activeExpired - Lifetime
- 1997-07-29BRBRPI9710792-1Apatent/BR9710792B1/enactiveIP Right Grant
- 1999
- 1999-04-28USUS09/300,315patent/US6069440A/ennot_activeExpired - Lifetime
- 1999-11-22JPJP33129399Apatent/JP3700502B2/ennot_activeExpired - Lifetime
- 1999-12-10USUS09/458,024patent/US6614179B1/ennot_activeExpired - Lifetime
- 2000
- 2000-04-07TWTW86110739A01patent/TWI156177B/ennot_activeIP Right Cessation
- 2000-09-28GRGR20000402181Tpatent/GR3034493T3/enunknown
- 2001
- 2001-10-29JPJP2001330406Apatent/JP2002198573A/enactivePending
- 2002
- 2002-09-24JPJP2002278066Apatent/JP3729166B2/ennot_activeExpired - Lifetime
- 2003
- 2003-07-01USUS10/609,402patent/US7362048B2/ennot_activeExpired - Fee Related
- 2003-07-01USUS10/609,503patent/US7071616B2/ennot_activeExpired - Fee Related
- 2003-07-02HKHK03104689.5Apatent/HK1052409B/ennot_activeIP Right Cessation
- 2003-10-03USUS10/677,382patent/US7026756B2/ennot_activeExpired - Fee Related
- 2004
- 2004-06-10USUS10/864,544patent/US7126274B2/ennot_activeExpired - Fee Related
- 2004-10-25KRKR1020040085497Apatent/KR100559346B1/ennot_activeExpired - Lifetime
- 2005
- 2005-05-19JPJP2005147093Apatent/JP2005317985A/enactivePending
- 2005-08-23USUS11/208,729patent/US7215074B2/ennot_activeExpired - Fee Related
- 2006
- 2006-07-19JPJP2006196344Apatent/JP4124248B2/ennot_activeExpired - Lifetime
- 2007
- 2007-01-16USUS11/653,275patent/US7329988B2/ennot_activeExpired - Fee Related
- 2007-03-05USUS11/682,014patent/US7531960B2/ennot_activeExpired - Fee Related
- 2008
- 2008-01-07JPJP2008000269Apatent/JP5214253B2/ennot_activeExpired - Lifetime
- 2008-02-08USUS12/028,062patent/US7682848B2/ennot_activeExpired - Fee Related
- 2009
- 2009-03-18JPJP2009065948Apatent/JP4530094B2/ennot_activeExpired - Lifetime
- 2009-08-27USUS12/548,621patent/US7901959B2/ennot_activeExpired - Fee Related
- 2009-08-27USUS12/548,614patent/US8148177B2/ennot_activeExpired - Fee Related
- 2009-08-27USUS12/548,618patent/US7915631B2/ennot_activeExpired - Fee Related
- 2009-08-27USUS12/548,620patent/US7969090B2/ennot_activeExpired - Fee Related
- 2009-09-14USUS12/559,042patent/US8610147B2/ennot_activeExpired - Fee Related
- 2009-10-07USUS12/575,155patent/US8754428B2/ennot_activeExpired - Fee Related
- 2009-10-07USUS12/575,162patent/US7968866B2/ennot_activeExpired - Fee Related
- 2010
- 2010-01-19USUS12/689,681patent/US20100117516A1/ennot_activeAbandoned
- 2010-07-01USUS12/829,182patent/US7855092B2/ennot_activeExpired - Fee Related
- 2010-07-07USUS12/831,586patent/US7943941B2/ennot_activeExpired - Fee Related
- 2010-10-14JPJP2010231162Apatent/JP5177199B2/ennot_activeExpired - Lifetime
- 2010-11-09USUS12/942,792patent/US8309375B2/ennot_activeExpired - Fee Related
- 2010-11-16USUS12/947,470patent/US8679866B2/ennot_activeExpired - Fee Related
- 2011
- 2011-08-15USUS13/210,027patent/US8685762B2/ennot_activeExpired - Fee Related
- 2012
- 2012-08-29JPJP2012189084Apatent/JP5177317B2/ennot_activeExpired - Lifetime
- 2013
- 2013-01-15JPJP2013004210Apatent/JP5725045B2/ennot_activeExpired - Lifetime
- 2013-11-26USUS14/091,107patent/US9130130B2/ennot_activeExpired - Fee Related
- 2013-12-24JPJP2013265770Apatent/JP5610056B2/ennot_activeExpired - Lifetime
- 2014
- 2014-06-27JPJP2014132379Apatent/JP2014212336A/ennot_activeWithdrawn
- 2014-06-27JPJP2014132374Apatent/JP5692445B2/ennot_activeExpired - Lifetime
- 2014-06-27JPJP2014132376Apatent/JP5821154B2/ennot_activeExpired - Lifetime
- 2014-06-27JPJP2014132371Apatent/JP5664815B2/ennot_activeExpired - Lifetime
- 2015
- 2015-12-08JPJP2015239461Apatent/JP5953514B2/ennot_activeExpired - Lifetime
- 2016
- 2016-03-28JPJP2016063289Apatent/JP6101943B2/ennot_activeExpired - Lifetime
- 2016-04-27JPJP2016089711Apatent/JP2016178320A/ennot_activeWithdrawn
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009041237A1 (en) | 2007-09-27 | 2009-04-02 | Showa Denko K.K. | Iii nitride semiconductor light emitting element |
| US7868340B2 (en) | 2008-05-30 | 2011-01-11 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| US10263163B2 (en) | 2008-05-30 | 2019-04-16 | Bridgelux, Inc. | Method and apparatus for generating white light from solid state light emitting devices |
| EP2395065A1 (en) | 2010-06-09 | 2011-12-14 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, light-emitting diode, and illuminating device and liquid crystal panel backlight device using them |
| US9062251B2 (en) | 2010-06-09 | 2015-06-23 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, light-emitting diode, and illuminating device and liquid crystal panel backlight device using them |
| US8816377B2 (en) | 2010-11-30 | 2014-08-26 | Panasonic Corporation | Phosphor and light emitting device |
| WO2012073887A1 (en) | 2010-11-30 | 2012-06-07 | パナソニック株式会社 | Phosphor and light emitting device |
| EP2474590A2 (en) | 2011-01-06 | 2012-07-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles and making method |
| US9617469B2 (en) | 2011-01-06 | 2017-04-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, making method, and light-emitting diode |
| EP2474589A2 (en) | 2011-01-06 | 2012-07-11 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles, making method, and light-emitting diode |
| KR20120080131A (en) | 2011-01-06 | 2012-07-16 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Phosphor particles and making method |
| US8865022B2 (en) | 2011-01-06 | 2014-10-21 | Shin-Etsu Chemical Co., Ltd. | Phosphor particles and making method |
| JP2012153904A (en)* | 2011-01-06 | 2012-08-16 | Shin-Etsu Chemical Co Ltd | Phosphor particle |
| WO2013046856A1 (en) | 2011-09-28 | 2013-04-04 | 富士フイルム株式会社 | Method for producing lithographic printing plate |
| KR20130079190A (en) | 2011-12-22 | 2013-07-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Preparation of yttrium-cerium-aluminum garnet phosphor |
| EP2607449A1 (en) | 2011-12-22 | 2013-06-26 | Shin-Etsu Chemical Co., Ltd. | Preparation of yttrium-cerium-aluminum garnet phosphor |
| EP2607448A1 (en) | 2011-12-22 | 2013-06-26 | Shin-Etsu Chemical Co., Ltd. | Yttrium-Cerium-Aluminum garnet phosphor and light-emitting device |
| EP2690154A1 (en) | 2012-07-24 | 2014-01-29 | Shin-Etsu Chemical Co., Ltd. | Method for preparing phosphor precursor and phosphor, and wavelength converter |
| KR20160005769A (en) | 2013-05-21 | 2016-01-15 | 샌트랄 글래스 컴퍼니 리미티드 | Broadband emission material and white light emission material |
| US9663397B2 (en) | 2013-05-21 | 2017-05-30 | Central Glass Company, Limited | Broadband emission material and white light emission material |
| WO2017200097A1 (en) | 2016-05-20 | 2017-11-23 | 株式会社 東芝 | White light source |
| US10957826B2 (en) | 2016-05-20 | 2021-03-23 | Kabushiki Kaisha Toshiba | White light source including LED and phosphors |
| US11563155B2 (en) | 2016-05-20 | 2023-01-24 | Seoul Semiconductor Co., Ltd. | White light source including LED and phosphors |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6101943B2 (en) | Light emitting device and display device | |
| JP2927279B2 (en) | Light emitting diode | |
| JP2003179259A6 (en) | Light emitting device and display device | |
| JPH11243232A5 (en) | ||
| JPH11243232A (en) | LED display | |
| KR100485082B1 (en) | Light emitting device and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination | Free format text:JAPANESE INTERMEDIATE CODE: A621 Effective date:20040729 | |
| A871 | Explanation of circumstances concerning accelerated examination | Free format text:JAPANESE INTERMEDIATE CODE: A871 Effective date:20050301 | |
| A975 | Report on accelerated examination | Free format text:JAPANESE INTERMEDIATE CODE: A971005 Effective date:20050411 | |
| A131 | Notification of reasons for refusal | Free format text:JAPANESE INTERMEDIATE CODE: A131 Effective date:20050419 | |
| A521 | Request for written amendment filed | Free format text:JAPANESE INTERMEDIATE CODE: A523 Effective date:20050502 | |
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) | Free format text:JAPANESE INTERMEDIATE CODE: A01 Effective date:20050621 | |
| A61 | First payment of annual fees (during grant procedure) | Free format text:JAPANESE INTERMEDIATE CODE: A61 Effective date:20050704 | |
| R150 | Certificate of patent or registration of utility model | Free format text:JAPANESE INTERMEDIATE CODE: R150 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20090722 Year of fee payment:4 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20090722 Year of fee payment:4 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20090722 Year of fee payment:4 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20100722 Year of fee payment:5 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20100722 Year of fee payment:5 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20110722 Year of fee payment:6 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20110722 Year of fee payment:6 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20120722 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20120722 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20120722 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20120722 Year of fee payment:7 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20130722 Year of fee payment:8 | |
| FPAY | Renewal fee payment (event date is renewal date of database) | Free format text:PAYMENT UNTIL: 20130722 Year of fee payment:8 | |
| R250 | Receipt of annual fees | Free format text:JAPANESE INTERMEDIATE CODE: R250 | |
| R157 | Certificate of patent or utility model (correction) | Free format text:JAPANESE INTERMEDIATE CODE: R157 | |
| R157 | Certificate of patent or utility model (correction) | Free format text:JAPANESE INTERMEDIATE CODE: R157 | |
| R250 | Receipt of annual fees | Free format text:JAPANESE INTERMEDIATE CODE: R250 | |
| R250 | Receipt of annual fees | Free format text:JAPANESE INTERMEDIATE CODE: R250 | |
| R250 | Receipt of annual fees | Free format text:JAPANESE INTERMEDIATE CODE: R250 | |
| R250 | Receipt of annual fees | Free format text:JAPANESE INTERMEDIATE CODE: R250 | |
| EXPY | Cancellation because of completion of term |