【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【発明の属する技術分野】本発明は半導体ウェーハやガ
ラス基板等に対しエッチング、アッシング、ＣＶＤ処
理、イオン注入処理等を行うプラズマ処理装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing etching, ashing, CVD processing, ion implantation processing and the like on semiconductor wafers, glass substrates and the like.
【０００２】[0002]
【従来の技術】プラズマ処理装置としてはチャンバー内
に一対の電極を配置した平行平板型の装置と、チャンバ
ーの外側にプラズマ発生用の電極（アンテナ）を設けた
プラズマ処理装置がある。後者の装置としては更に、チ
ャンバーの外周に一対のシート状電極を対向配置し、こ
れら一対のシート状電極の一方に高周波電源を接続し、
他方を接地したタイプと、チャンバーの周囲に螺旋状若
しくは環状のコイル電極を配置し、このコイル電極に高
周波電源を接続したタイプがある。2. Description of the Related Art Plasma processing apparatuses include a parallel plate type apparatus in which a pair of electrodes are arranged in a chamber and a plasma processing apparatus in which an electrode (antenna) for generating plasma is provided outside the chamber. As the latter device, further, a pair of sheet-shaped electrodes are arranged to face each other on the outer periphery of the chamber, and a high frequency power source is connected to one of the pair of sheet-shaped electrodes,
There are a type in which the other is grounded and a type in which a spiral or annular coil electrode is arranged around the chamber and a high frequency power source is connected to this coil electrode.
【０００３】また、高周波を印加することで発生するプ
ラズマには、容量結合型プラズマ(CCP:Capacitive Coup
led Plasma)と誘導結合型プラズマ(ICP:Inductive Coup
ledPlasma)があり、シート状電極を用いたプラズマ処理
装置にあっては容量結合型プラズマが主に発生し、コイ
ル電極を用いたプラズマ処理装置にあっては誘導結合型
プラズマが主に発生する。Further, the plasma generated by applying a high frequency includes capacitively coupled plasma (CCP).
led plasma) and inductively coupled plasma (ICP)
led plasma), a plasma processing apparatus using a sheet electrode mainly generates capacitively coupled plasma, and a plasma processing apparatus using a coil electrode mainly generates inductively coupled plasma.
【０００４】容量結合型プラズマは基板にダメージを与
えるので、誘導結合型プラズマの方が好ましいことが判
明している。そこで、コイル電極を用いたプラズマ処理
装置であって、更に容量結合型プラズマの発生を抑制す
る先行技術として、特開平８−５０９９６号公報に開示
されるものがある。この先行技術は、コイル電極（アン
テナ）とプラズマ処理用チャンバーとの間にファラデー
シールドを配置し、コイル電極の軸方向電場を電気的に
短絡して容量結合型プラズマを抑制するというものであ
り、特にファラデーシールドの形状を図３に示すよう
に、複数の長尺な導電体１００の下端部をリング状の導
電体１０１で接続し、更にリング状の導電体１０１の一
部に切欠１０２を設けている。It has been found that inductively coupled plasma is preferred because capacitively coupled plasma damages the substrate. Therefore, there is a plasma processing apparatus using a coil electrode, which is disclosed in JP-A-8-50996 as a prior art for further suppressing the generation of capacitively coupled plasma. In this prior art, a Faraday shield is arranged between a coil electrode (antenna) and a plasma processing chamber, and an axial electric field of the coil electrode is electrically short-circuited to suppress capacitively coupled plasma. In particular, as shown in FIG. 3, the shape of the Faraday shield is such that the lower ends of a plurality of elongated conductors 100 are connected by a ring-shaped conductor 101, and a cutout 102 is provided in a part of the ring-shaped conductor 101. ing.
【０００５】[0005]
【発明が解決しようとする課題】ファラデーシールドに
チャンバーの周方向に沿って電気的な閉ループが形成さ
れると、該閉ループに電流（環状電流）が流れ、プラズ
マ発生の効率が下がるとともにジュール熱が発生する。
そこで、前記先行技術にあっては、切欠１０２を設ける
ことで、電気的な閉ループが形成されるのを防止してい
るのであるが、切欠１０２の間隔が狭いと短絡が生じ、
また短絡が生じない場合でも、均一にプラズマが発生し
にくいという問題がある。When an electric closed loop is formed in the Faraday shield along the circumferential direction of the chamber, an electric current (annular current) flows in the closed loop, the efficiency of plasma generation is lowered, and Joule heat is generated. Occur.
Therefore, in the prior art, the formation of the cutout 102 prevents the formation of an electrically closed loop. However, if the gap between the cutouts 102 is narrow, a short circuit may occur.
Further, even if a short circuit does not occur, there is a problem that it is difficult to generate plasma uniformly.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決すべく本
発明に係るプラズマ処理装置は、プラズマ処理用チャン
バーと、このプラズマ処理用チャンバーの周囲に設けら
れるコイル電極と、このコイル電極とプラズマ処理用チ
ャンバーとの間に配置されるファラデーシールドを備
え、更に、前記ファラデーシールドはプラズマ処理用チ
ャンバーの周方向に沿って配設される複数の短冊状導電
体からなり、これら複数の短冊状導電体は交互に上端部
及び下端部が連続している構成とした。In order to solve the above problems, a plasma processing apparatus according to the present invention includes a plasma processing chamber, a coil electrode provided around the plasma processing chamber, and the coil electrode and plasma processing. A Faraday shield disposed between the plasma processing chamber and the Faraday shield. The Faraday shield is composed of a plurality of strip-shaped conductors arranged along the circumferential direction of the plasma processing chamber. Has a structure in which the upper end and the lower end are alternately continuous.
【０００７】尚、短冊状導電体の幅若しくは短冊状導電
体間の隙間は、均等でもよいが、給電位置に対応して異
ならせるようにしてもよい。The widths of the strip-shaped conductors or the gaps between the strip-shaped conductors may be equal, but may be different depending on the power feeding position.
【０００８】[0008]
【発明の実施の形態】以下に本発明の実施の形態を添付
図面に基づいて説明する。ここで、図１は本発明に係る
プラズマ処理装置の全体図、図２はファラデーシールド
の斜視図であり、プラズマ処理装置はベース１上に載置
されるアルミニウム合金製の下部チャンバー２と、この
下部チャンバー２上に載置される石英やセラミックス製
の上部チャンバー３を備えている。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. Here, FIG. 1 is an overall view of a plasma processing apparatus according to the present invention, and FIG. 2 is a perspective view of a Faraday shield. The plasma processing apparatus includes a lower chamber 2 made of an aluminum alloy and mounted on a base 1. The upper chamber 3 made of quartz or ceramics is mounted on the lower chamber 2.
【０００９】そして、下部チャンバー２と上部チャンバ
ー３は連通し、下部チャンバー２内を被処理物の処理領
域とし、上部チャンバー３内をプラズマ発生領域として
いる。The lower chamber 2 and the upper chamber 3 communicate with each other, and the inside of the lower chamber 2 serves as a processing region for the object to be treated and the inside of the upper chamber 3 serves as a plasma generation region.
【００１０】即ち、ベース１には開口４が形成され、こ
の開口４に下方からステージ５が臨んでいる。このステ
ージ５は昇降動可能とされるとともにヒータを内蔵して
いる。更に、開口４の内周には排気リング６が設けら
れ、この排気リング６に形成した穴から排気を行うよう
にしている。尚、この排気リング６は発生したプラズマ
が飛ばないように絶縁処理を施すことが好ましい。That is, an opening 4 is formed in the base 1, and the stage 5 faces the opening 4 from below. The stage 5 can be moved up and down and has a built-in heater. Further, an exhaust ring 6 is provided on the inner circumference of the opening 4, and exhaust is performed through a hole formed in the exhaust ring 6. The exhaust ring 6 is preferably subjected to an insulation treatment so that the generated plasma does not fly.
【００１１】一方、上部チャンバー３はケース７内に納
められ、上部チャンバー３の上端部にはガス拡散カップ
８が取付けられ、このガス拡散カップ８に反応ガス導入
管９が接続されている。On the other hand, the upper chamber 3 is housed in a case 7, a gas diffusion cup 8 is attached to the upper end of the upper chamber 3, and a reaction gas introducing pipe 9 is connected to the gas diffusion cup 8.
【００１２】また、上部チャンバー３の外側にはスパイ
ラルアンテナ（コイル電極）１０が設けられている。こ
のスパイラルアンテナ１０は上部チャンバー３の外側に
立設した支柱１１の凹部に保持されることで、その上下
方向の間隔を一定に維持し、更にスパイラルアンテナ１
０の上端は４００ＫＨz〜２７ＭＨzの高周波電源に接続
され、下端はアースされ、これらスパイラルアンテナ１
０の上端と下端とは周方向を基準としてほぼ同一位置に
くるようにしている。A spiral antenna (coil electrode) 10 is provided outside the upper chamber 3. The spiral antenna 10 is held in a concave portion of a column 11 standing upright on the outer side of the upper chamber 3 to maintain a constant vertical interval between the spiral antenna 10 and the spiral antenna 1.
The upper end of 0 is connected to a high frequency power source of 400 kHz to 27 MHz and the lower end is grounded.
The upper end and the lower end of 0 are located at substantially the same position with respect to the circumferential direction.
【００１３】また、上部チャンバー３の外側とスパイラ
ルアンテナ１０の内側の間にはアルミニウム合金製のフ
ァラデーシールド１２が配置されている。このファラデ
ーシールド１２は図２にも示すように、上部チャンバー
３の周方向に沿って配設される複数の短冊状導電体１３
と、これら複数の短冊状導電体１３の上端部及び下端部
を交互に電気的に接続する連続部１４とから構成され、
全体としては周方向に連続しているが、リング状となる
部分は有しない形状となっている。A Faraday shield 12 made of aluminum alloy is arranged between the outside of the upper chamber 3 and the inside of the spiral antenna 10. As shown in FIG. 2, the Faraday shield 12 includes a plurality of strip-shaped conductors 13 arranged along the circumferential direction of the upper chamber 3.
And a continuous portion 14 that electrically connects the upper ends and the lower ends of the plurality of strip-shaped conductors 13 alternately.
Although it is continuous in the circumferential direction as a whole, it has a shape that does not have a ring-shaped portion.
【００１４】また、短冊状導電体１３の幅は全て均等で
もよいが、高周波電源（給電部）からの距離により電場
の強弱があるので、高周波電源に近い方の短冊状導電体
１３の幅を広くし、高周波電源から離れるにしたがって
短冊状導電体１３の幅を狭くするようにした方が好まし
い。The strip-shaped conductors 13 may all have the same width, but since the electric field strength varies depending on the distance from the high-frequency power source (power supply section), the width of the strip-shaped conductor 13 closer to the high-frequency power source should be set to a certain value. It is preferable to widen the width and narrow the width of the strip-shaped conductor 13 as the distance from the high frequency power source increases.
【００１５】以上において、排気リング６を介して排気
するとともに、スパイラルアンテナ１０に高周波を印加
すると、スパイラルアンテナ１０の軸方向電場はファラ
デーシールド１２によって電気的に短絡され、容量結合
型プラズマの発生が抑制され、上部チャンバー３内に主
として誘導結合型プラズマが発生する。In the above, when the gas is exhausted through the exhaust ring 6 and a high frequency is applied to the spiral antenna 10, the axial electric field of the spiral antenna 10 is electrically short-circuited by the Faraday shield 12 to generate capacitively coupled plasma. It is suppressed, and inductively coupled plasma is mainly generated in the upper chamber 3.
【００１６】そして、発生した誘導結合型プラズマは反
応ガス導入管９から導入された反応ガスとともに下部チ
ャンバー２内に導入され、ステージ５上に載置されてい
る半導体ウェーハ等の被処理物Ｗに対してエッチングや
アッシング等の所定の処理を行う。Then, the generated inductively coupled plasma is introduced into the lower chamber 2 together with the reaction gas introduced from the reaction gas introduction pipe 9, and is applied to the processing object W such as a semiconductor wafer placed on the stage 5. On the other hand, a predetermined process such as etching or ashing is performed.
【００１７】[0017]
【発明の効果】以上に説明したように本発明によれば、
プラズマ処理用チャンバーの周囲に設けたコイル電極と
チャンバーとの間に配置されるファラデーシールドを、
プラズマ処理用チャンバーの周方向に沿って配設される
複数の短冊状導電体からなり、且つこれら複数の短冊状
導電体は交互に上端部及び下端部が連続した構成とした
ので、チャンバーの周方向に沿って電気的な閉ループが
形成されて環状電流が流れる不利がなく、しかも均一に
効率よく誘導結合型プラズマを発生せしめることができ
る。As described above, according to the present invention,
A Faraday shield placed between the chamber and the coil electrode provided around the plasma processing chamber,
It consists of a plurality of strip-shaped conductors arranged along the circumferential direction of the plasma processing chamber, and the plurality of strip-shaped conductors have a structure in which the upper end and the lower end are alternately continuous. It is possible to generate an inductively coupled plasma uniformly and efficiently without the disadvantage that an annular closed current is formed along the direction and a circular current flows.
【図１】本発明に係るプラズマ処理装置の全体図FIG. 1 is an overall view of a plasma processing apparatus according to the present invention.
【図２】ファラデーシールドの斜視図FIG. 2 is a perspective view of a Faraday shield.
【図３】従来のファラデーシールドの斜視図FIG. 3 is a perspective view of a conventional Faraday shield.
１…ベース、２…下部チャンバー、３…上部チャンバ
ー、４…開口、５…ステージ、６…排気リング、７…ケ
ース、８…ガス拡散カップ、９…反応ガス導入管、１０
…スパイラルアンテナ（コイル電極）、１１…支柱、１
２…ファラデーシールド、１３…短冊状導電体、１４…
連続部。1 ... Base, 2 ... Lower chamber, 3 ... Upper chamber, 4 ... Opening, 5 ... Stage, 6 ... Exhaust ring, 7 ... Case, 8 ... Gas diffusion cup, 9 ... Reaction gas introduction pipe, 10
… Spiral antenna (coil electrode), 11… Struts, 1
2 ... Faraday shield, 13 ... Strip-shaped conductor, 14 ...
Continuous section.
─────────────────────────────────────────────────────フロントページの続き (51)Int.Cl.7 識別記号 ＦＩ Ｈ０１Ｌ 21/3065 Ｈ０１Ｌ 21/302 Ｂ (58)調査した分野(Int.Cl.7，ＤＢ名) H05H 1/46 C23F 4/00 H01L 21/205 H01L 21/265 H01L 21/3065─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl.7 Identification code FI H01L 21/3065 H01L 21/302 B (58) Fields investigated (Int.Cl.7 , DB name) H05H 1/46 C23F 4 / 00 H01L 21/205 H01L 21/265 H01L 21/3065
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35647297AJP3460113B2 (en) | 1997-12-25 | 1997-12-25 | Plasma processing equipment |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35647297AJP3460113B2 (en) | 1997-12-25 | 1997-12-25 | Plasma processing equipment |
| Publication Number | Publication Date |
|---|---|
| JPH11185995A JPH11185995A (en) | 1999-07-09 |
| JP3460113B2true JP3460113B2 (en) | 2003-10-27 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35647297AExpired - Fee RelatedJP3460113B2 (en) | 1997-12-25 | 1997-12-25 | Plasma processing equipment |
| Country | Link |
|---|---|
| JP (1) | JP3460113B2 (en) |
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| JP2001523887A (en) | 1997-11-14 | 2001-11-27 | 東京エレクトロン株式会社 | Plasma processing system and method for cleaning plasma processing system |
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| JP2001523887A (en) | 1997-11-14 | 2001-11-27 | 東京エレクトロン株式会社 | Plasma processing system and method for cleaning plasma processing system |
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| JPH11185995A (en) | 1999-07-09 |
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