| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32517197AJP3362113B2 (ja) | 1997-07-15 | 1997-11-12 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
| TW087108969ATW526274B (en) | 1997-07-15 | 1998-06-05 | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
| US09/102,582US6139983A (en) | 1997-07-15 | 1998-06-23 | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
| KR1019980026732AKR100300647B1 (ko) | 1997-07-15 | 1998-07-03 | 내식성부재와웨이퍼설치부재및내식성부재의제조방법 |
| DE69812489TDE69812489T2 (de) | 1997-07-15 | 1998-07-14 | Korrosionsbeständiges Bauteil, Waferträger und Verfahren zu deren Herstellung |
| EP98305585AEP0891957B1 (en) | 1997-07-15 | 1998-07-14 | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
| US09/618,135US6632549B1 (en) | 1997-07-15 | 2000-07-17 | Corrosion-resistant member, wafer-supporting member, and method of manufacturing the same |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9-203955 | 1997-07-15 | ||
| JP20395597 | 1997-07-15 | ||
| JP32517197AJP3362113B2 (ja) | 1997-07-15 | 1997-11-12 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
| Publication Number | Publication Date |
|---|---|
| JPH1180925A JPH1180925A (ja) | 1999-03-26 |
| JP3362113B2true JP3362113B2 (ja) | 2003-01-07 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32517197AExpired - LifetimeJP3362113B2 (ja) | 1997-07-15 | 1997-11-12 | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 |
| Country | Link |
|---|---|
| US (2) | US6139983A (ja) |
| EP (1) | EP0891957B1 (ja) |
| JP (1) | JP3362113B2 (ja) |
| KR (1) | KR100300647B1 (ja) |
| DE (1) | DE69812489T2 (ja) |
| TW (1) | TW526274B (ja) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6379492B2 (en)* | 1998-10-31 | 2002-04-30 | Applied Materials, Inc. | Corrosion resistant coating |
| US6383964B1 (en)* | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
| EP1013623B1 (en)* | 1998-12-21 | 2004-09-15 | Shin-Etsu Chemical Co., Ltd. | Corrosion-resistant composite oxide material |
| US6432256B1 (en) | 1999-02-25 | 2002-08-13 | Applied Materials, Inc. | Implanatation process for improving ceramic resistance to corrosion |
| JP4166386B2 (ja)* | 1999-09-30 | 2008-10-15 | 日本碍子株式会社 | 耐蝕性部材およびその製造方法 |
| JP2001097790A (ja)* | 1999-09-30 | 2001-04-10 | Ngk Insulators Ltd | 耐蝕性部材およびその製造方法 |
| JP2001127056A (ja)* | 1999-10-29 | 2001-05-11 | Applied Materials Inc | プロセスチャンバー内のクリーニング方法及び基板処理装置 |
| JP3510993B2 (ja) | 1999-12-10 | 2004-03-29 | トーカロ株式会社 | プラズマ処理容器内部材およびその製造方法 |
| KR20010062209A (ko)* | 1999-12-10 | 2001-07-07 | 히가시 데쓰로 | 고내식성 막이 내부에 형성된 챔버를 구비하는 처리 장치 |
| JP4540221B2 (ja)* | 2000-04-21 | 2010-09-08 | 日本碍子株式会社 | 積層体、耐蝕性部材および耐ハロゲンガスプラズマ用部材 |
| JP2002249864A (ja)* | 2000-04-18 | 2002-09-06 | Ngk Insulators Ltd | 耐ハロゲンガスプラズマ用部材およびその製造方法 |
| TW503449B (en) | 2000-04-18 | 2002-09-21 | Ngk Insulators Ltd | Halogen gas plasma-resistive members and method for producing the same, laminates, and corrosion-resistant members |
| US6444957B1 (en)* | 2000-04-26 | 2002-09-03 | Sumitomo Osaka Cement Co., Ltd | Heating apparatus |
| JP4544708B2 (ja)* | 2000-07-19 | 2010-09-15 | コバレントマテリアル株式会社 | 耐プラズマ性部材およびその製造方法 |
| JP2002038252A (ja)* | 2000-07-27 | 2002-02-06 | Ngk Insulators Ltd | 耐熱性構造体、耐ハロゲン系腐食性ガス材料および耐ハロゲン系腐食性ガス性構造体 |
| TWI290589B (en)* | 2000-10-02 | 2007-12-01 | Tokyo Electron Ltd | Vacuum processing device |
| US6589868B2 (en)* | 2001-02-08 | 2003-07-08 | Applied Materials, Inc. | Si seasoning to reduce particles, extend clean frequency, block mobile ions and increase chamber throughput |
| JP2002241971A (ja)* | 2001-02-14 | 2002-08-28 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材 |
| JP2002293630A (ja)* | 2001-03-29 | 2002-10-09 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材およびその製造方法 |
| JP2002356387A (ja)* | 2001-03-30 | 2002-12-13 | Toshiba Ceramics Co Ltd | 耐プラズマ性部材 |
| US7670688B2 (en)* | 2001-06-25 | 2010-03-02 | Applied Materials, Inc. | Erosion-resistant components for plasma process chambers |
| US20030029563A1 (en)* | 2001-08-10 | 2003-02-13 | Applied Materials, Inc. | Corrosion resistant coating for semiconductor processing chamber |
| US6632325B2 (en) | 2002-02-07 | 2003-10-14 | Applied Materials, Inc. | Article for use in a semiconductor processing chamber and method of fabricating same |
| KR100454987B1 (ko)* | 2002-03-25 | 2004-11-06 | 주식회사 코미코 | 플라즈마 융사를 이용한 반도체 제조용 부품의 제조 및재생방법 |
| US6798519B2 (en) | 2002-09-30 | 2004-09-28 | Tokyo Electron Limited | Method and apparatus for an improved optical window deposition shield in a plasma processing system |
| US7137353B2 (en) | 2002-09-30 | 2006-11-21 | Tokyo Electron Limited | Method and apparatus for an improved deposition shield in a plasma processing system |
| US7204912B2 (en) | 2002-09-30 | 2007-04-17 | Tokyo Electron Limited | Method and apparatus for an improved bellows shield in a plasma processing system |
| US6837966B2 (en) | 2002-09-30 | 2005-01-04 | Tokyo Electron Limeted | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7166166B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved baffle plate in a plasma processing system |
| US7166200B2 (en) | 2002-09-30 | 2007-01-23 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate in a plasma processing system |
| US7147749B2 (en) | 2002-09-30 | 2006-12-12 | Tokyo Electron Limited | Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system |
| US7780786B2 (en) | 2002-11-28 | 2010-08-24 | Tokyo Electron Limited | Internal member of a plasma processing vessel |
| JP3829935B2 (ja)* | 2002-12-27 | 2006-10-04 | 信越化学工業株式会社 | 高耐電圧性部材 |
| US20040188319A1 (en)* | 2003-03-28 | 2004-09-30 | Saint-Gobain Ceramics & Plastics, Inc. | Wafer carrier having improved processing characteristics |
| JP4597972B2 (ja) | 2003-03-31 | 2010-12-15 | 東京エレクトロン株式会社 | 処理部材上に隣接するコーティングを接合する方法。 |
| KR101016913B1 (ko) | 2003-03-31 | 2011-02-22 | 도쿄엘렉트론가부시키가이샤 | 처리요소용 배리어층 및 그의 형성방법 |
| CN1288108C (zh)* | 2003-10-24 | 2006-12-06 | 东芝陶瓷股份有限会社 | 耐等离子体构件、其制造方法及形成热喷涂涂层的方法 |
| JP2005167227A (ja)* | 2003-11-11 | 2005-06-23 | Ibiden Co Ltd | ガス噴出ヘッド、その製法、半導体製造装置及び耐食性材料 |
| US20060165994A1 (en)* | 2004-07-07 | 2006-07-27 | General Electric Company | Protective coating on a substrate and method of making thereof |
| US20060163112A1 (en)* | 2004-08-19 | 2006-07-27 | Mark Sandifer | Reinforced structural member for high temperature operations and fabrication method |
| JP4467453B2 (ja)* | 2004-09-30 | 2010-05-26 | 日本碍子株式会社 | セラミックス部材及びその製造方法 |
| US7552521B2 (en) | 2004-12-08 | 2009-06-30 | Tokyo Electron Limited | Method and apparatus for improved baffle plate |
| US7601242B2 (en) | 2005-01-11 | 2009-10-13 | Tokyo Electron Limited | Plasma processing system and baffle assembly for use in plasma processing system |
| WO2007013184A1 (ja) | 2005-07-29 | 2007-02-01 | Tocalo Co., Ltd. | Y2o3溶射皮膜被覆部材およびその製造方法 |
| JP4942963B2 (ja)* | 2005-08-18 | 2012-05-30 | 日本碍子株式会社 | 耐食性部材及びその製造方法 |
| JP4796354B2 (ja)* | 2005-08-19 | 2011-10-19 | 日本碍子株式会社 | 静電チャック及びイットリア焼結体の製造方法 |
| JP4985928B2 (ja)* | 2005-10-21 | 2012-07-25 | 信越化学工業株式会社 | 多層コート耐食性部材 |
| JP2007115973A (ja)* | 2005-10-21 | 2007-05-10 | Shin Etsu Chem Co Ltd | 耐食性部材 |
| US7968205B2 (en) | 2005-10-21 | 2011-06-28 | Shin-Etsu Chemical Co., Ltd. | Corrosion resistant multilayer member |
| US7648782B2 (en) | 2006-03-20 | 2010-01-19 | Tokyo Electron Limited | Ceramic coating member for semiconductor processing apparatus |
| US20080029032A1 (en)* | 2006-08-01 | 2008-02-07 | Sun Jennifer Y | Substrate support with protective layer for plasma resistance |
| JP2007119924A (ja)* | 2006-11-30 | 2007-05-17 | Tocalo Co Ltd | プラズマ処理容器内用高純度溶射皮膜被覆部材およびその製造方法 |
| JP2007107100A (ja)* | 2006-11-30 | 2007-04-26 | Tocalo Co Ltd | プラズマ処理容器内複合膜被覆部材およびその製造方法 |
| JP2007126752A (ja)* | 2006-12-08 | 2007-05-24 | Tocalo Co Ltd | プラズマ処理容器内部材およびその製造方法 |
| JP4800990B2 (ja)* | 2007-03-15 | 2011-10-26 | 日本碍子株式会社 | 静電チャック |
| JP5089204B2 (ja)* | 2007-03-15 | 2012-12-05 | 日本碍子株式会社 | 加熱装置 |
| JP5365165B2 (ja)* | 2007-12-04 | 2013-12-11 | 信越化学工業株式会社 | ウエハ |
| US10157731B2 (en)* | 2008-11-12 | 2018-12-18 | Applied Materials, Inc. | Semiconductor processing apparatus with protective coating including amorphous phase |
| US9017765B2 (en)* | 2008-11-12 | 2015-04-28 | Applied Materials, Inc. | Protective coatings resistant to reactive plasma processing |
| CN102643034A (zh)* | 2011-02-21 | 2012-08-22 | 鸿富锦精密工业(深圳)有限公司 | 功能玻璃及其制备方法 |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| KR101617984B1 (ko) | 2012-02-03 | 2016-05-18 | 도카로 가부시키가이샤 | 백색 불화물 용사 피막의 흑색화 방법 및 표면에 흑색층을 갖는 불화물 용사 피막 피복 부재 |
| US9421570B2 (en) | 2012-02-09 | 2016-08-23 | Tocalo Co., Ltd. | Method for forming fluoride spray coating and fluoride spray coating covered member |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| CN105190847A (zh)* | 2013-03-08 | 2015-12-23 | 应用材料公司 | 具有适于保护抵抗氟等离子体的保护涂层的腔室部件 |
| KR102202406B1 (ko)* | 2013-05-23 | 2021-01-13 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 처리 챔버를 위한 코팅된 라이너 어셈블리 |
| US9583369B2 (en) | 2013-07-20 | 2017-02-28 | Applied Materials, Inc. | Ion assisted deposition for rare-earth oxide based coatings on lids and nozzles |
| KR102377903B1 (ko)* | 2013-11-06 | 2022-03-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 졸 겔 코팅된 지지 링 |
| US9725799B2 (en) | 2013-12-06 | 2017-08-08 | Applied Materials, Inc. | Ion beam sputtering with ion assisted deposition for coatings on chamber components |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| US9850161B2 (en) | 2016-03-29 | 2017-12-26 | Applied Materials, Inc. | Fluoride glazes from fluorine ion treatment |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| US9850573B1 (en) | 2016-06-23 | 2017-12-26 | Applied Materials, Inc. | Non-line of sight deposition of erbium based plasma resistant ceramic coating |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US20180016678A1 (en) | 2016-07-15 | 2018-01-18 | Applied Materials, Inc. | Multi-layer coating with diffusion barrier layer and erosion resistant layer |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US10755900B2 (en) | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US11279656B2 (en) | 2017-10-27 | 2022-03-22 | Applied Materials, Inc. | Nanopowders, nanoceramic materials and methods of making and use thereof |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
| WO2019103613A1 (en) | 2017-11-27 | 2019-05-31 | Asm Ip Holding B.V. | A storage device for storing wafer cassettes for use with a batch furnace |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| TWI799494B (zh) | 2018-01-19 | 2023-04-21 | 荷蘭商Asm 智慧財產控股公司 | 沈積方法 |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| WO2019158960A1 (en) | 2018-02-14 | 2019-08-22 | Asm Ip Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US10443126B1 (en) | 2018-04-06 | 2019-10-15 | Applied Materials, Inc. | Zone-controlled rare-earth oxide ALD and CVD coatings |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| TWI873894B (zh) | 2018-06-27 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料及包含含金屬材料的膜及結構之循環沉積方法 |
| KR102854019B1 (ko) | 2018-06-27 | 2025-09-02 | 에이에스엠 아이피 홀딩 비.브이. | 금속 함유 재료를 형성하기 위한 주기적 증착 방법 및 금속 함유 재료를 포함하는 필름 및 구조체 |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11667575B2 (en) | 2018-07-18 | 2023-06-06 | Applied Materials, Inc. | Erosion resistant metal oxide coatings |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11180847B2 (en) | 2018-12-06 | 2021-11-23 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TWI874340B (zh) | 2018-12-14 | 2025-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| US10858741B2 (en) | 2019-03-11 | 2020-12-08 | Applied Materials, Inc. | Plasma resistant multi-layer architecture for high aspect ratio parts |
| JP2020167398A (ja) | 2019-03-28 | 2020-10-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | ドアオープナーおよびドアオープナーが提供される基材処理装置 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| KR20200123380A (ko) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | 층 형성 방법 및 장치 |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| KR20200141931A (ko) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR20210010307A (ko) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| KR20210010817A (ko) | 2019-07-19 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 토폴로지-제어된 비정질 탄소 중합체 막을 형성하는 방법 |
| WO2021013660A1 (en) | 2019-07-19 | 2021-01-28 | Evatec Ag | Piezoelectric coating and deposition process |
| TWI851767B (zh) | 2019-07-29 | 2024-08-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於利用n型摻雜物及/或替代摻雜物選擇性沉積以達成高摻雜物併入之方法 |
| CN112309900A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US12169361B2 (en) | 2019-07-30 | 2024-12-17 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN112309899A (zh) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | 基板处理设备 |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| CN112323048B (zh) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | 用于化学源容器的液位传感器 |
| CN112342526A (zh) | 2019-08-09 | 2021-02-09 | Asm Ip私人控股有限公司 | 包括冷却装置的加热器组件及其使用方法 |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| US20220195605A1 (en)* | 2019-10-04 | 2022-06-23 | Showa Denko K.K. | Corrosion-resistant member |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| TWI846966B (zh) | 2019-10-10 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成光阻底層之方法及包括光阻底層之結構 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR20210054983A (ko) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN120432376A (zh) | 2019-11-29 | 2025-08-05 | Asm Ip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210078405A (ko) | 2019-12-17 | 2021-06-28 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 나이트라이드 층을 형성하는 방법 및 바나듐 나이트라이드 층을 포함하는 구조 |
| KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| JP7636892B2 (ja) | 2020-01-06 | 2025-02-27 | エーエスエム・アイピー・ホールディング・ベー・フェー | チャネル付きリフトピン |
| JP7730637B2 (ja) | 2020-01-06 | 2025-08-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR20210093163A (ko) | 2020-01-16 | 2021-07-27 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TW202513845A (zh) | 2020-02-03 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置結構及其形成方法 |
| KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
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| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
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| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
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| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698320A (en)* | 1984-06-26 | 1987-10-06 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body |
| US4672046A (en)* | 1984-10-15 | 1987-06-09 | Tdk Corporation | Sintered aluminum nitride body |
| US4746637A (en)* | 1984-11-08 | 1988-05-24 | Kabushiki Kaisha Toshiba | Aluminum nitride sintered body and process for producing the same |
| CA1262149A (en)* | 1985-08-13 | 1989-10-03 | Hitofumi Taniguchi | Sinterable aluminum nitride composition, sintered body from this composition and process for producing the sintered body |
| US5314850A (en)* | 1985-10-31 | 1994-05-24 | Kyocera Corporation | Aluminum nitride sintered body and production thereof |
| JP2986859B2 (ja) | 1990-07-05 | 1999-12-06 | 三菱アルミニウム株式会社 | アルミニウム合金材およびその製造方法 |
| JP2963169B2 (ja) | 1990-08-10 | 1999-10-12 | アプライド・マテリアルズ・ジャパン株式会社 | 高周波プラズマ発生用電極 |
| JP3017528B2 (ja) | 1990-11-27 | 2000-03-13 | アプライドマテリアルズジャパン株式会社 | プラズマ処理装置 |
| DE69233692T2 (de)* | 1991-03-26 | 2007-12-06 | Ngk Insulators, Ltd., Nagoya | Verwendung eines korrosion beständigen Substratshalters |
| JP3071933B2 (ja)* | 1991-05-28 | 2000-07-31 | 日本碍子株式会社 | 解離したハロゲン系腐蝕性ガスに対する耐蝕性部材およびその製造方法 |
| JPH06206772A (ja)* | 1992-11-18 | 1994-07-26 | Toshiba Corp | 窒化アルミニウム焼結体およびセラミック回路基板 |
| JP3078671B2 (ja) | 1992-11-26 | 2000-08-21 | 日本碍子株式会社 | 耐蝕性部材、その使用方法およびその製造方法 |
| US5364496A (en)* | 1993-08-20 | 1994-11-15 | Hughes Aircraft Company | Highly durable noncontaminating surround materials for plasma etching |
| US5680013A (en)* | 1994-03-15 | 1997-10-21 | Applied Materials, Inc. | Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces |
| JPH07273053A (ja)* | 1994-03-31 | 1995-10-20 | Tokyo Electron Ltd | 処理装置及びアルミ系部材のコーティング方法 |
| US5756222A (en)* | 1994-08-15 | 1998-05-26 | Applied Materials, Inc. | Corrosion-resistant aluminum article for semiconductor processing equipment |
| JPH08208338A (ja) | 1995-01-31 | 1996-08-13 | Kyocera Corp | 耐蝕性部材およびウエハ保持装置 |
| JP3426825B2 (ja) | 1995-12-22 | 2003-07-14 | 京セラ株式会社 | プラズマ処理装置用部材及びプラズマ処理装置 |
| JPH09328382A (ja)* | 1996-06-04 | 1997-12-22 | Mitsubishi Materials Corp | 半導体製造装置用の窒化アルミニウム基材及びその製造方法 |
| Publication number | Publication date |
|---|---|
| EP0891957A1 (en) | 1999-01-20 |
| KR100300647B1 (ko) | 2001-11-22 |
| DE69812489T2 (de) | 2004-02-12 |
| DE69812489D1 (de) | 2003-04-30 |
| TW526274B (en) | 2003-04-01 |
| EP0891957B1 (en) | 2003-03-26 |
| JPH1180925A (ja) | 1999-03-26 |
| KR19990013565A (ko) | 1999-02-25 |
| US6139983A (en) | 2000-10-31 |
| US6632549B1 (en) | 2003-10-14 |
| Publication | Publication Date | Title |
|---|---|---|
| JP3362113B2 (ja) | 耐蝕性部材、ウエハー設置部材および耐蝕性部材の製造方法 | |
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| JP3318514B2 (ja) | 半導体支持装置 | |
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| US6406799B1 (en) | Method of producing anti-corrosion member and anti-corrosion member | |
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| JP2000103689A (ja) | アルミナ質焼結体およびその製造方法、並びに耐プラズマ部材 | |
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| JPH11228234A (ja) | 耐食性及び熱伝導性に優れた焼結体 |
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