【０００１】[0001]
【産業上の利用分野】本発明は、半導体露光装置等にお
いて波長６００ｎｍないし７００ｎｍの可視光と波長２
００ｎｍないし３００ｎｍの紫外光の２つの光を用いる
光学系のレンズやミラーのための２波長反射防止膜に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor exposure apparatus and the like which employs visible light having a wavelength of
The present invention relates to a two-wavelength antireflection film for a lens or a mirror of an optical system using two lights of 00 nm to 300 nm.
【０００２】[0002]
【従来の技術】近年、半導体露光装置の解像力を高める
ために、ｇ線やｉ線等の光より波長の短い光、例えば、
ＫｒＦエキシマレーザから発生される波長２４８ｎｍの
紫外光を用いたものが開発されている。また、半導体露
光装置のレチクルやマスクとウエハの位置合わせ（アラ
イメント）には可視光を用いるのが一般的であり、レチ
クルやウエハのアライメントマークを高精度で検出でき
る可視光であって、しかもフォトレジストに対して感光
しない光、例えば、Ｈｅ−Ｎｅレーザから発生される波
長６３２．８ｎｍの可視光が用いられる。従って、半導
体露光装置の光学系のレンズやミラー等の表面に設けら
れる反射防止膜は、前述の可視光と紫外光のそれぞれの
波長領域で所望の反射防止特性を有するものでなければ
ならず、いわゆる２波長反射防止膜として、２層あるい
は３層の１／４波長膜からなる多層反射防止膜や、前記
２層あるいは３層の１／４波長膜のうちの少くとも１層
を等価膜にすることで広域化を行った４層あるいは５層
の多層反射防止膜（特開昭６３−１１３５０１号公報お
よび特開平２−１２７６０１号公報参照）が開発されて
いる。最近では、半導体露光装置の高Ｎａ化や露光領域
の拡大に伴って光学系のレンズやミラーに対する露光光
の入射角が増大する傾向にあるため、斜入射でも反射率
が上昇しないようにより広い波長領域において所定の反
射防止特性を有する２波長反射防止膜の開発、すなわ
ち、２波長反射防止膜の反射防止特性の広域化が望まれ
る。2. Description of the Related Art In recent years, in order to increase the resolution of a semiconductor exposure apparatus, light having a shorter wavelength than light such as g-line or i-line, for example,
A device using ultraviolet light having a wavelength of 248 nm generated from a KrF excimer laser has been developed. In general, visible light is used for aligning a reticle or a mask of a semiconductor exposure apparatus with a wafer. Visible light that can detect alignment marks on the reticle or the wafer with high accuracy is used. Light that is not exposed to the resist, for example, visible light having a wavelength of 632.8 nm generated from a He-Ne laser is used. Therefore, the antireflection film provided on the surface of the lens or mirror of the optical system of the semiconductor exposure apparatus must have desired antireflection characteristics in the respective wavelength regions of the visible light and the ultraviolet light described above. As a so-called two-wavelength antireflection film, a multilayer antireflection film composed of two or three quarter-wave films or at least one of the two or three quarter-wave films is equivalent to an equivalent film. Thus, a multilayer antireflection film having four or five layers (see JP-A-63-113501 and JP-A-2-127601) has been developed in which the area is widened. In recent years, the incident angle of exposure light to the lens and mirror of the optical system tends to increase with the increase in Na and the exposure area of the semiconductor exposure apparatus, so that a wider wavelength so that the reflectance does not increase even at oblique incidence. It is desired to develop a two-wavelength antireflection film having a predetermined antireflection characteristic in a region, that is, to broaden the antireflection characteristics of the two-wavelength antireflection film.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら上記従来
の技術によれば、露光光である紫外光に対する反射防止
特性が極めて狭い波長領域に限られており、斜入射の場
合に反射率が著しく上昇するおそれがあるため、半導体
露光装置の高Ｎａ化や露光領域の拡大に充分対応できな
い。また、２波長反射防止膜の一部を構成する高屈折率
物質が、例えば、Ｙ2 Ｏ3 のように極めて高い屈折率を
もつ材料であるときは紫外光域の光に対する２波長反射
防止膜の吸収が増大してトラブルを発生する。すなわ
ち、これらの高屈折率物質は、３００ｎｍ以下の波長領
域、すなわち、紫外光域の光に対して吸収率が高いため
に、従来例のように光学膜厚が０．５λ0 と比較的厚い
場合には、露光光のエネルギーを多量に吸収し、その結
果、光学系のレンズやミラーの温度が上昇して光学性能
の変動を招くおそれがある。However, according to the above-mentioned prior art, the antireflection characteristic for the ultraviolet light as the exposure light is limited to an extremely narrow wavelength region, and the reflectance significantly increases at oblique incidence. For this reason, it is not possible to sufficiently cope with increasing the Na content of the semiconductor exposure apparatus and expanding the exposure area. When the high-refractive-index substance constituting a part of the two-wavelength antireflection film is a material having an extremely high refractive index, for example, Y2 O3 , the two-wavelength antireflection film for light in the ultraviolet light range is used. Absorption of water increases, causing trouble. That is, the high refractive index material, 300 nm or less in the wavelength region, i.e., due to high absorption for light in the ultraviolet light region, optical film thickness as in the prior art is relatively thick and 0.5 [lambda0 In such a case, a large amount of energy of the exposure light is absorbed, and as a result, the temperature of a lens or a mirror of the optical system may increase, resulting in a change in optical performance.
【０００４】本発明は、上記従来の技術の有する問題点
に鑑みてなされたものであり、紫外光域の波長の光に対
する反射防止特性を大幅に広域化できるうえに極めて吸
収の少ない良質の２波長反射防止膜を提供することを目
的とするものである。SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems of the prior art, and has a high quality antireflection characteristic for light having a wavelength in the ultraviolet light range. It is an object of the present invention to provide a wavelength antireflection film.
【０００５】[0005]
【課題を解決するための手段】上記の目的を達成するた
めに本発明の２波長反射防止膜は、基体の表面に積層さ
れた４層の薄膜からなる多層膜を有し、前記４層の薄膜
のうちで、前記基体の表面から遠い順に第１層の薄膜が
波長λ0の光に対する屈折率が１．５５以下である低屈
折率物質、第２層の薄膜が波長λ0の光に対する屈折率
が１．９０以上である高屈折率物質、第３層の薄膜が波
長λ0の光に対する屈折率が１．５５以下である低屈折
率物質、第４層の薄膜が波長λ0の光に対する屈折率が
１．５５ないし１．９０である中間屈折率物質でそれぞ
れ作られており、前記第１層の薄膜の光学膜厚Ｄ1と、
前記第２層の薄膜の光学膜厚Ｄ2と、前記第３層の薄膜
の光学膜厚Ｄ3と、前記第４層の薄膜の光学膜厚Ｄ4が
それぞれ以下の条件式、 ０．２λ0≦Ｄ1≦０．４λ0 ０．０４λ0≦Ｄ2≦０．１５λ0 ０．４λ0≦Ｄ3≦０．６λ0 ０．４λ0≦Ｄ4≦０．６λ0を満足する ことを特徴とする。In order to achieve the above object, a two-wavelength antireflection film of the present invention has a multilayer film composed of four thin films laminated on the surface of a substrate. Among the thin films, the thin film of the first layer is
A low-refractive-index substancehaving a refractive index of 1.55 or less for light ofwavelength λ0, and a thin film of the second layerhaving a refractive index ofλ0
There high refractive indexmaterial is 1.90 or more, the thin film of the third layer isa wave
A low-refractive-index substancehaving a refractive index of 1.55 or less for light having alength of λ0, and a thin film of the fourth layerhaving a refractive index for light having awavelength of λ0
Each madeof an intermediate refractive index material of1.55 to 1.90, the optical thickness D1 of the thin film of the first layer,
Wherein the optical thickness D2 of the thin film of the second layer, the third optical film thickness D3 of the thin film of layers, the optical thickness D4 of the followingconditional expressions each of the thin film of the fourthlayer, 0.2?that satisfies0 ≦ D 1 ≦ 0.4λ 0 0.04λ 0 ≦ D 2 ≦ 0.15λ 0 0.4λ 0 ≦ D 3 ≦ 0.6λ 0 0.4λ 0 ≦ D 4 ≦ 0.6λ 0 Features.
【０００６】[0006]
【０００７】[0007]
【作用】中間屈折率物質とは、波長２４８ｎｍの光に対
する屈折率が１．５５ないし１．９０であるＡｌ2 Ｏ
3 、ＣａＦ2 、ＮｄＦ3 、ＹＦ2 等およびこれらの混合
物をいう。高屈折率物質とは前記波長の光に対する屈折
率が１．９０以上のＹ2 Ｏ3 、ＨｆＯ2 等およびこれら
の混合物をいう。また、低屈折率物質とは、前記波長の
光に対する屈折率が１．５５以下であるＭｇＦ2 、Ｓｉ
Ｏ2 、ＢａＦ2 、ＬｉＦ、ＳｉＦ2 、ＡｌＦ3 、ＮａＦ
等およびこれらの混合物をいう。これらの材料から所定
の屈折率を有するものを選定し、前記範囲の光学膜厚を
有する４層反射防止膜を設計すれば、紫外光に対する反
射防止特性を大幅に広域化した２波長反射防止膜を得る
ことができる。また、紫外光に対する吸収の大きい高屈
折率物質の薄膜が極めて薄いために、紫外光の吸収を大
幅に低減できる。The intermediate refractive index material is Al2 O having a refractive index of 1.55 to 1.90 for light having a wavelength of 248 nm.
3 , CaF2 , NdF3 , YF2 and the like, and mixtures thereof. High refractive index material and the refractive index is 1.90 or more Y2 O3 with respect to light of said wavelength, HfO2, and the like, and refer to these mixtures. Further, the low-refractive-index substance refers to MgF2 , Si having a refractive index of 1.55 or less for light having the wavelength.
O2 , BaF2 , LiF, SiF2 , AlF3 , NaF
Etc. and mixtures thereof. If a material having a predetermined refractive index is selected from these materials and a four-layer anti-reflection film having an optical film thickness in the above range is designed, a two-wavelength anti-reflection film whose anti-reflection characteristics for ultraviolet light is greatly broadened is provided. Can be obtained. Further, since the thin film of the high-refractive-index substance having a large absorption for ultraviolet light is extremely thin, the absorption of ultraviolet light can be greatly reduced.
【０００８】[0008]
【実施例】本発明の実施例を説明する。An embodiment of the present invention will be described.
【０００９】第１実施例 波長２４８ｎｍの光に対する屈折率１．５１を有する基
体である合成石英の基板の表面に、該表面から遠い順に
低屈折率物質であるＭｇＦ2 の第１層の薄膜、高屈折率
物質であるＹ2 Ｏ3 の第２層の薄膜、低屈折率物質であ
るＳｉＯ2 の第３層の薄膜および中間屈折率物質である
Ａｌ2 Ｏ3 の第４層の薄膜からなる設計波長λ0 ＝２４
８ｎｍの多層膜を設ける。各層の薄膜は公知の真空蒸着
法によって成膜され、その材料、屈折率、光学膜厚、成
膜時の成膜速度および成膜室の酸素分圧は表１の通りで
ある。First Embodiment A first layer of MgF2 , which is a substance having a low refractive index, is disposed on a surface of a substrate made of synthetic quartz, which is a substrate having a refractive index of 1.51 with respect to light having a wavelength of 248 nm, in order from the surface. It is composed of a thin film of a second layer of Y2 O3 as a high refractive index material, a thin film of a third layer of SiO2 as a low refractive index material, and a thin film of a fourth layer of Al2 O3 as an intermediate refractive index material. Design wavelength λ0 = 24
An 8 nm multilayer film is provided. The thin film of each layer is formed by a known vacuum evaporation method, and its material, refractive index, optical film thickness, film forming speed during film formation, and oxygen partial pressure in the film forming chamber are as shown in Table 1.
【００１０】[0010]
【表１】本実施例は、ＫｒＦエキシマレーザを光源とする波長２
４８ｎｍのレーザ光と、Ｈｅ−Ｎｅレーザを光源とする
波長６３２．８ｎｍのレーザ光に対して反射防止特性を
有する２波長反射防止膜として設計されたものであり、
第１ないし第４層はそれぞれ公知の真空蒸着法によって
成膜され、特に、高屈折率物質の第２層の成膜は、高周
波励起によって電界を付与して行われ、その成膜速度は
１ｎｍ／秒以下に制御された。また、中間屈折率物質の
第４層の成膜も、成膜速度を１ｎｍ／秒以下に制御して
行われた。[Table 1] In this embodiment, a wavelength 2 using a KrF excimer laser as a light source is used.
It is designed as a two-wavelength anti-reflection film having anti-reflection properties for a laser beam of 48 nm and a laser beam of 632.8 nm wavelength using a He-Ne laser as a light source,
Each of the first to fourth layers is formed by a known vacuum evaporation method. In particular, the formation of the second layer of the high refractive index material is performed by applying an electric field by high frequency excitation, and the film formation speed is 1 nm. / Sec or less. Also, the formation of the fourth layer of the intermediate refractive index substance was performed while controlling the film formation rate to 1 nm / sec or less.
【００１１】高屈折率物質の第２層の膜厚は従来の２波
長反射防止膜がほぼ０．５λ0 であるのに比べて極めて
小さいために、その材料がＹ2 Ｏ3 のように紫外光を吸
収しやすい性質を有するものであっても実際に吸収する
エネルギー量はわずかであり、加えて前述のように、成
膜中に高周波励起による電界を付与し、かつ、成膜速度
を１ｎｍ／秒以下に制御することでより一層吸収率を低
下させることができる。さらに、前述のように中間屈折
率物質の第４層の成膜速度を１ｎｍ／秒以下に制御する
ことで第４層の吸収率も大幅に低下させることができ
る。その結果、本実施例の２波長反射防止膜は、紫外光
の吸収量を大幅に低減し、光学系のレンズやミラーの温
度上昇を招くおそれはない。Since the thickness of the second layer of the high-refractive-index material is extremely small as compared with that of the conventional two-wavelength antireflection film, which is approximately 0.5λ0 , the material is made of ultraviolet light such as Y2 O3. Even if it has the property of easily absorbing light, the amount of energy actually absorbed is small. In addition, as described above, an electric field is applied by high-frequency excitation during film formation, and the film formation speed is 1 nm. By controlling the rate to not more than / sec, the absorption rate can be further reduced. Further, as described above, by controlling the film formation rate of the fourth layer of the intermediate refractive index material to 1 nm / sec or less, the absorptance of the fourth layer can be significantly reduced. As a result, the two-wavelength antireflection film of the present embodiment greatly reduces the amount of ultraviolet light absorbed, and does not cause a rise in the temperature of the lens or mirror of the optical system.
【００１２】図１の曲線Ｒ0 は、本実施例の２波長反射
防止膜に入射角０°で入射する光に対する分光反射率を
示すもので、この図から本実施例の２波長反射防止膜
は、ＫｒＦエキシマレーザの光の波長２４８ｎｍ（設計
波長）とＨｅ−Ｎｅレーザのレーザ光の波長６３２．８
ｎｍをそれぞれ含む比較的広い２つの波長領域において
極めて良好な反射防止特性を有することが解る。The curve R0 in FIG. 1 shows the spectral reflectance for light incident on the two-wavelength anti-reflection coating of this embodiment at an incident angle of 0 °. Are the wavelength 248 nm (design wavelength) of the light of the KrF excimer laser and the wavelength 632.8 of the laser light of the He—Ne laser.
It can be seen that the filter has extremely good antireflection characteristics in two relatively wide wavelength ranges including nm.
【００１３】また、図１の曲線Ｒ1 は本実施例の２波長
反射防止膜に入射角４０°で入射する光に対する分光反
射率を示すもので、このように入射角が変化することで
反射防止特性を有する波長領域がずれても、前記２つの
レーザ光の波長２４８ｎｍと、６３２．８ｎｍは所望の
反射防止特性を有する波長領域内にある。このように、
本実施例の２波長反射防止膜は、斜入射の光に対して著
しく反射率が上昇するおそれがないため、高Ｎａ化や露
光領域の拡大が進んだ半導体露光装置の光学系にも充分
対応できる。The curve R1 in FIG. 1 shows the spectral reflectance for light incident on the two-wavelength antireflection film of this embodiment at an incident angle of 40 °. Even if the wavelength regions having the anti-reflection characteristics are shifted, the wavelengths 248 nm and 632.8 nm of the two laser beams are within the wavelength regions having the desired anti-reflection characteristics. in this way,
The two-wavelength antireflection film of this embodiment does not have a possibility of significantly increasing the reflectance with respect to obliquely incident light, and thus is sufficiently compatible with the optical system of a semiconductor exposure apparatus in which the Na content is increased and the exposure area is expanded. it can.
【００１４】変形例 本実施例と同様の第１ないし第４層の薄膜からなる多層
膜と基板の間に、多層膜の密着性や耐久性を向上させる
ために略０．５λ0 の整数倍の光学膜厚を有する低屈折
率物質であるＳｉＯ2 のアンダーコートを設ける。[0014] During the multi-layer film and the substrate formed of a thin film of a similar to the modification embodiment 1 through the fourth layer, an integral multiple of approximately 0.5 [lambda0 in order to improve the adhesion and durability of the multilayer film An undercoat of SiO2 , which is a low-refractive-index substance, having an optical film thickness of 3 nm is provided.
【００１５】表２はこのようなアンダーコートを有する
合計５層の２波長反射防止膜を成膜した場合の各層の材
料、屈折率、光学膜厚、成膜中の成膜速度および酸素分
圧を示す。本変形例の分光反射率や吸収率については本
実施例と同様であるので説明は省略する。Table 2 shows the material, refractive index, optical film thickness, film forming rate and oxygen partial pressure of each layer when a total of five layers of a two-wavelength antireflection film having such an undercoat were formed. Is shown. The spectral reflectance and the absorptance of the present modified example are the same as those of the present embodiment, and therefore the description is omitted.
【００１６】[0016]
【表２】なお、本実施例の２波長反射防止膜の高屈折率物質には
波長２４８ｎｍの光に対する屈折率が１．９０以上の材
料Ｙ2 Ｏ3 ，ＨｆＯ2 等のなかからＹ2 Ｏ3 を選定し、
また、中間屈折率物質とは波長２４８ｎｍの光に対する
屈折率が１．５５〜１．９０の材料Ａｌ2 Ｏ3 ，ＬａＦ
3 ，ＮｄＦ3 ，ＹＦ3 およびこれらの混合物をいうが、
本実施例はこれらのうちで特に強度の点からＡｌ2 Ｏ3
を選定し、低屈折率物質にはやはり強度の点からＭｇＦ
2 およびＳｉＯ2 を用いているが、これらの外にＢａＦ
2 ，ＬｉＦ，ＳｒＦ2 ，ＡｌＦ3 ，ＮａＦおよびこれら
の混合物を用いることもできる。さらに、高屈折率物質
の第２層の成膜中の基板に高周波励起による電界を付与
して成膜を促進する替わりに、高屈折率物質の蒸発粒子
とともに酸素イオンを基板に照射して成膜を促進するい
わゆるイオンアシスト蒸着法を用いてもよい。低屈折率
物質の第１層および第３層の成膜中に酸素の導入を停止
して酸素分圧をゼロにすると、より一層吸収率を低下さ
せることができる。[Table 2] As the high refractive index substance of the two-wavelength antireflection film of this embodiment, Y2 O3 is selected from materials such as Y2 O3 and HfO2 having a refractive index of 1.90 or more with respect to light having a wavelength of 248 nm. ,
The intermediate refractive index material is a material having a refractive index of 1.55 to 1.90 for light having a wavelength of 248 nm, such as Al2 O3 and LaF.
3 , NdF3 , YF3 and mixtures thereof,
In the present embodiment, Al2 O3
Is selected, and MgF is added to the low refractive index material in view of the strength.
2 and SiO2 are used.
2, LiF, can also be used SrF2, AlF3, NaF, and mixtures thereof. Furthermore, instead of applying an electric field by high-frequency excitation to the substrate during the formation of the second layer of the high-refractive-index substance to promote the film formation, the substrate is irradiated with oxygen ions together with the evaporated particles of the high-refractive-index substance. A so-called ion assisted vapor deposition method for promoting a film may be used. When the introduction of oxygen is stopped during the formation of the first and third layers of the low-refractive-index substance and the oxygen partial pressure is reduced to zero, the absorptivity can be further reduced.
【００１７】本実施例において、低屈折率物質の第１
層、高屈折率物質の第２層、低屈折率物質の第３層およ
び中間屈折率物質の第４層の光学膜厚は、それぞれ０．
２λ0ないし０．４λ0 、０．０４λ0 ないし０．１５
λ0 、０．４λ0 ないし０．６λ0 および０．４λ0 な
いし０．６λ0 の範囲で変更することができる。しか
し、各層の光学膜厚をこの範囲外とすると所望の反射防
止特性が得られない。In this embodiment, the first low refractive index material is used.
The optical thicknesses of the first layer, the second layer of the high-refractive-index substance, the third layer of the low-refractive-index substance, and the fourth layer of the intermediate-refractive-index substance are each 0.1.
2λ0 to 0.4λ0 , 0.04λ0 to 0.15
λ0 , 0.4λ0 to 0.6λ0 and 0.4λ0 to 0.6λ0 can be changed. However, if the optical film thickness of each layer is out of this range, desired antireflection characteristics cannot be obtained.
【００１８】第２実施例 第１実施例と同様の基体である合成石英の基板の表面
に、該表面から遠い順に低屈折率物質であるＭｇＦ2 の
第１層の薄膜、高屈折率物質であるＨｆＯ2 の第２層の
薄膜、低屈折率物質であるＳｉＯ2 の第３層の薄膜およ
び中間屈折率物質であるＡｌ2 Ｏ3 の第４層の薄膜から
なる設計波長λ0 ＝２４８ｎｍの多層膜を設けた。各層
の屈折率、光学膜厚、成膜時の成膜速度および成膜室の
酸素分圧は表３の通りである。Second Embodiment A first layer of MgF2 , which is a low refractive index material, and a high refractive index material are sequentially formed on the surface of a synthetic quartz substrate, which is the same substrate as in the first embodiment, in the order of distance from the surface. A design wavelength λ0 = 248 nm comprising a second thin film of HfO2, a third thin film of SiO2 as a low refractive index material, and a fourth thin film of Al2 O3 as an intermediate refractive index material. A multilayer film was provided. Table 3 shows the refractive index of each layer, the optical film thickness, the film formation speed during film formation, and the oxygen partial pressure of the film formation chamber.
【００１９】[0019]
【表３】本実施例の第１ないし第４層は、それぞれ公知の真空蒸
着法によって成膜され、特に、第２層の高屈折率物質に
ＨｆＯ2 を用いるとともに、その成膜を酸素イオンを基
板の表面に照射して促進するいわゆるイオンアシスト法
を用いて行った点以外は第１実施例と同様の成膜条件で
成膜された。[Table 3] The first to fourth layers of the present embodiment are each formed by a known vacuum deposition method. In particular, HfO2 is used as the high refractive index material of the second layer, and oxygen ions are formed on the surface of the substrate. The film was formed under the same film forming conditions as in the first example, except that the film was formed by using a so-called ion assist method in which irradiation was accelerated.
【００２０】図２の曲線Ｒ0 は本実施例の２波長反射防
止膜に入射角０°で入射する光に対する分光反射率を示
すもので、この図から本実施例の２波長反射防止膜は、
第１実施例の２波長反射防止膜と同様に、ＫｒＦエキシ
マレーザのレーザ光の波長２４８ｎｍ（設計波長）とＨ
ｅ−Ｎｅレーザのレーザ光の波長６３２．８ｎｍをそれ
ぞれ含む比較的広い２つの波長領域において極めて良好
な反射防止特性を有することが解る。The curve R0 in FIG. 2 shows the spectral reflectance for light incident on the two-wavelength anti-reflection coating of this embodiment at an incident angle of 0 °. ,
Similarly to the two-wavelength antireflection film of the first embodiment, the wavelength of the laser light of the KrF excimer laser is 248 nm (design wavelength) and H
It can be seen that the device has extremely good antireflection characteristics in two relatively wide wavelength ranges including the 632.8 nm wavelength of the laser beam of the e-Ne laser.
【００２１】また、図２の曲線Ｒ1 は本実施例の２波長
反射防止膜に入射角４０°で入射する光に対する分光反
射率を示すもので、このように入射角が変化しても、前
記２つのレーザ光の波長２４８ｎｍと６３２．８ｎｍは
所望の反射防止特性を有する波長領域に含まれる。従っ
て、第１実施例の２波長反射防止膜と同様に本実施例の
２波長反射防止膜も高Ｎａ化や露光領域の拡大が進んだ
半導体露光装置の光学系に充分対応できる。The curve R1 in FIG. 2 shows the spectral reflectance for light incident on the two-wavelength antireflection film of this embodiment at an incident angle of 40 °. The wavelengths 248 nm and 632.8 nm of the two laser beams are included in a wavelength region having desired antireflection characteristics. Therefore, like the two-wavelength anti-reflection film of the first embodiment, the two-wavelength anti-reflection film of this embodiment can sufficiently cope with the optical system of a semiconductor exposure apparatus in which the Na content is increased and the exposure area is expanded.
【００２２】また、第１実施例と同様に本実施例の第１
ないし第４層からなる多層膜と基板の間に、多層膜の密
着性や耐久性を向上させるために略０．５λ0 の整数倍
の光学膜厚を有するＳｉＯ2 のアンダーコートを設けて
もよい。その他の点は第１実施例と同様であるので説明
は省略する。Further, like the first embodiment, the first embodiment
Or between the multilayer film and the substrate made of the fourth layer, it is provided with adhesion and undercoat of SiO2 having an integral multiple of the optical thickness of approximately 0.5 [lambda0 in order to improve the durability of the multilayer film Good. The other points are the same as those of the first embodiment, and the description is omitted.
【００２３】[0023]
【発明の効果】本発明は上述のとおり構成されているの
で、以下に記載するような効果を奏する。Since the present invention is configured as described above, the following effects can be obtained.
【００２４】２波長反射防止膜の紫外光域の波長の光に
対する反射防止特性を大幅に広域化するとともに、吸収
率を大幅に低減できる。その結果、露光装置等におい
て、露光光が斜入射であっても反射率が上昇するおそれ
がないうえに、吸収が少なくて光学系の光学特性を損う
おそれもない良質の２波長反射防止膜を実現できる。The antireflection characteristics of the two-wavelength antireflection film for light having a wavelength in the ultraviolet region can be significantly widened, and the absorptance can be significantly reduced. As a result, in an exposure apparatus or the like, a high-quality two-wavelength anti-reflection film that does not increase the reflectance even if the exposure light is obliquely incident and has little absorption and does not impair the optical characteristics of the optical system. Can be realized.
【図１】第１実施例の２波長反射防止膜の分光反射率を
示すグラフである。FIG. 1 is a graph showing a spectral reflectance of a two-wavelength antireflection film of a first example.
【図２】第２実施例の２波長反射防止膜の分光反射率を
示すグラフである。FIG. 2 is a graph showing a spectral reflectance of a two-wavelength antireflection film of a second example.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15625293AJP3213122B2 (en) | 1993-06-02 | 1993-06-02 | 2-wavelength anti-reflection coating |
| US08/156,694US5532871A (en) | 1992-11-25 | 1993-11-24 | Two-wavelength antireflection film |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15625293AJP3213122B2 (en) | 1993-06-02 | 1993-06-02 | 2-wavelength anti-reflection coating |
| Publication Number | Publication Date |
|---|---|
| JPH06347603A JPH06347603A (en) | 1994-12-22 |
| JP3213122B2true JP3213122B2 (en) | 2001-10-02 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15625293AExpired - Fee RelatedJP3213122B2 (en) | 1992-11-25 | 1993-06-02 | 2-wavelength anti-reflection coating |
| Country | Link |
|---|---|
| JP (1) | JP3213122B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3924806B2 (en)* | 1996-06-10 | 2007-06-06 | 株式会社ニコン | Anti-reflection coating |
| JP2004226428A (en)* | 2003-01-17 | 2004-08-12 | Kogaku Giken:Kk | Two-wavelength antireflection film and method for forming two-wavelength antireflection film |
| US8619365B2 (en) | 2004-12-29 | 2013-12-31 | Corning Incorporated | Anti-reflective coating for optical windows and elements |
| US20060139757A1 (en)* | 2004-12-29 | 2006-06-29 | Harris Michael D | Anti-reflective coating for optical windows and elements |
| JP2023004305A (en)* | 2021-06-25 | 2023-01-17 | 三菱重工業株式会社 | Optical element and laser processing device equipped therewith |
| Publication number | Publication date |
|---|---|
| JPH06347603A (en) | 1994-12-22 |
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