| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28803192AJP3179212B2 (ja) | 1992-10-27 | 1992-10-27 | 半導体装置の製造方法 |
| DE69308727TDE69308727T2 (de) | 1992-10-27 | 1993-10-25 | Herstellungsverfahren von einer Halbleitervorrichtung mit einer begrabenen Kontaktstruktur |
| EP93117253AEP0596364B1 (en) | 1992-10-27 | 1993-10-25 | Method of producing semiconductor device having buried contact structure |
| KR93022272AKR0134331B1 (en) | 1992-10-27 | 1993-10-26 | Manufacturing method of semiconductor device having buried contact structure |
| US08/679,489US5804505A (en) | 1992-10-27 | 1996-07-12 | Method of producing semiconductor device having buried contact structure |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28803192AJP3179212B2 (ja) | 1992-10-27 | 1992-10-27 | 半導体装置の製造方法 |
| Publication Number | Publication Date |
|---|---|
| JPH06140372A JPH06140372A (ja) | 1994-05-20 |
| JP3179212B2true JP3179212B2 (ja) | 2001-06-25 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28803192AExpired - LifetimeJP3179212B2 (ja) | 1992-10-27 | 1992-10-27 | 半導体装置の製造方法 |
| Country | Link |
|---|---|
| US (1) | US5804505A (ja) |
| EP (1) | EP0596364B1 (ja) |
| JP (1) | JP3179212B2 (ja) |
| KR (1) | KR0134331B1 (ja) |
| DE (1) | DE69308727T2 (ja) |
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