【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、モノシランあるいはジクロルシランおよび
アンモニアを原料ガスとして減圧化学気相成長法により
シリコン窒化膜を成長させる工程を有する半導体装置の
製造方法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device having a step of growing a silicon nitride film by low pressure chemical vapor deposition using monosilane or dichlorosilane and ammonia as source gases.
［従来の技術］ CVD法によるシリコン窒化膜は、ダイナミック・ラン
ダム・アクセス・メモリー（DRAM）の容量絶縁膜の構成
要素の一つとして用いられてきた。[Related Art] A silicon nitride film formed by a CVD method has been used as one of components of a capacitive insulating film of a dynamic random access memory (DRAM).
従来のシリコン窒化膜の成長方法としては、モノシラ
ン（SiH4）あるいはジクロルシラン（SiH2Cl2）および
アンモニア（NH3）を原料ガスとして、減圧CVD法により
成長させる方法がある。この方法において、成長の過程
において、原料ガスであるSiH4あるいはSiH2Cl2およびN
H3は常に連続して一定流量で流される。As a conventional method for growing a silicon nitride film, there is a method in which monosilane (SiH4 ) or dichlorosilane (SiH2 Cl2 ) and ammonia (NH3 ) are used as source gases for growth by a low pressure CVD method. In this method, in the course of growth, the source gases SiH4 or SiH2 Cl2 and N
H3 is always flowed at a constant flow rate.
［発明が解決しようとする課題］ 上述した従来の方法により得られたシリコン窒化膜は
DRAMの容量膜として通常シリコン酸化膜／シリコン窒化
膜／シリコン酸化膜の３層構造、あるいは、シリコン酸
化膜／シシリコン窒化膜の２層構造で用いられる。[Problem to be Solved by the Invention] The silicon nitride film obtained by the conventional method described above is
A DRAM capacitor film is usually used in a three-layer structure of a silicon oxide film / silicon nitride film / silicon oxide film or a two-layer structure of a silicon oxide film / silicon nitride film.
近年、半導体装置の大きさが縮小するに伴い、DRAMの
膜厚も必然的に薄くしなけねればならなくなった。しか
し、シリコン窒化膜は、その膜厚を薄くしていくと、リ
ーク電流の増加、耐酸化性の低下などの問題が生じてく
る。これらの問題を回避するためには、シリコン窒化膜
の膜質を向上させる必要がある。In recent years, as the size of the semiconductor device has been reduced, the thickness of the DRAM must necessarily be reduced. However, as the thickness of the silicon nitride film is reduced, problems such as an increase in leak current and a decrease in oxidation resistance occur. In order to avoid these problems, it is necessary to improve the quality of the silicon nitride film.
一般にシリコン窒化膜においては、化学量論比（Si:N
＝3:4）よりもシリコンが過多になると、膜質が劣化す
る性質がある。従来のシリコン窒化膜の成長方法におい
て膜質を向上させる方法としてNH3/SiH4あるいはNH3/Si
H2Cl2の流量比を大きくすることにより、成長されるシ
リコン窒化膜中のSiとＮの化学量論比からのずれを少な
くする方法がある。しかしこの方法では成長圧力を一定
に保つためSiH4＋NH3あるいはSiH2Cl2＋NH3の総流量を
一定に保つ必要があり、シリコン窒化膜の膜質を向上さ
せるためには必然的にSiH4あるいはSiH2Cl2の流量を減
少させなければならない。SiH4あるいはSiH2Cl2の流量
を減少させることにより、シリコン窒化膜の成長速度は
低下し、スループットが低下するという欠点がある。Generally, in a silicon nitride film, the stoichiometric ratio (Si: N
= 3: 4), the film quality is degraded when the amount of silicon is excessive. NH3 / SiH4 or NH3 / Si as a method of improving the film quality in the conventional silicon nitride film growth method
There is a method of reducing the deviation from the stoichiometric ratio of Si and N in the silicon nitride film to be grown by increasing the flow rate ratio of H2 Cl2 . However, in this method, the total flow rate of SiH4 + NH3 or SiH2 Cl2 + NH3 needs to be kept constant in order to keep the growth pressure constant. In order to improve the film quality of the silicon nitride film, SiH4 or NH3 The flow rate of SiH2 Cl2 must be reduced. By decreasing the flow rate of SiH4 or SiH2 Cl2 , there is a disadvantage that the growth rate of the silicon nitride film is reduced and the throughput is reduced.
本発明は上記欠点のない半導体装置の製造方法を提供
するものである。The present invention provides a method for manufacturing a semiconductor device without the above-mentioned disadvantages.
［課題を解決するための手段］ 本発明の半導体装置の製造方法は、モノシランあるい
はジクロルシラン及びアンモニアを原料ガスとして減圧
化学気相成長法によりシリコン窒化膜を成長させる工程
を有する半導体装置の製造方法において、前記シリコン
窒化膜の成長の途中でモノシランあるいはジクロルシラ
ンの供給を停止し、アンモニアのみを供給する工程を含
み、前記シリコン窒化膜を成長させる工程とアンモニア
のみを供給する工程を繰り返して所定の膜厚のシリコン
窒化膜を形成することを特徴とする。[Means for Solving the Problems] A method for manufacturing a semiconductor device according to the present invention is directed to a method for manufacturing a semiconductor device having a step of growing a silicon nitride film by a reduced pressure chemical vapor deposition method using monosilane or dichlorosilane and ammonia as source gases. A step of stopping the supply of monosilane or dichlorosilane during the growth of the silicon nitride film and supplying only ammonia, and repeating the step of growing the silicon nitride film and the step of supplying only ammonia to a predetermined thickness. Forming a silicon nitride film.
［実施例］ 次に、本発明の実施例について図面を参照して説明す
る。Example Next, an example of the present invention will be described with reference to the drawings.
第１図は本発明のシリコン窒化膜の成長方法の第１の
実施例におけるSiH2Cl2およびNH3を用いた場合のガスフ
ローを示すタイムチャートである。FIG. 1 is a time chart showing a gas flow when SiH2 Cl2 and NH3 are used in the first embodiment of the method for growing a silicon nitride film of the present invention.
成長温度750℃、SiH2Cl2流量25sccm、NH3流量1.3sl
m、成長圧力0.2Torrにおいて、シリコン窒化膜の成長速
度はおよそ５Å/minである。本発明におけるシリコン窒
化膜の成長方法でシリコン窒化膜の膜質を改善しようと
する場合、この成長条件でNH3のみを２分間供給するこ
とにより、約40Å程度のシリコン窒化膜の膜質を改善す
ることができる。よって、100Åのシリコン窒化膜を成
長させる場合には、成長途中で２回、NH3のみを供給す
る工程を行なうことが必要である。Growth temperature 750 ° C, SiH2 Cl2 flow rate 25sccm, NH3 flow rate 1.3sl
At m and a growth pressure of 0.2 Torr, the growth rate of the silicon nitride film is about 5 ° / min. When the quality of the silicon nitride film is to be improved by the method of growing a silicon nitride film according to the present invention, by supplying only NH3 for 2 minutes under these growth conditions, the quality of the silicon nitride film can be improved by about 40 °. Can be. Therefore, when growing a 100 ° silicon nitride film, it is necessary to perform a step of supplying only NH3 twice during the growth.
次に、第１図を参照して詳細に説明する。この場合、
横軸は時間、縦軸はガスの流量を示す。Next, a detailed description will be given with reference to FIG. in this case,
The horizontal axis indicates time, and the vertical axis indicates gas flow rate.
本実施例においてSiH2Cl2の最大流量R1は25sccm、NH3
の最大流量R2は1.3slmである。時間T1において、SiH2Cl
2およびNH3のバルブを開け、成長を開始する。シリコン
窒化膜が35Å成長したT2の時点すなわちT1から７分経過
した時点でSiH2Cl2のバルブを閉じる。ここでNH3のみが
供給されることにより成長したシリコン窒化膜の膜質が
改善される。T2から２分経過したT3で再びSiH2Cl2のバ
ルブを開け、シリコン窒化膜の成長を開始する。T3から
７分後のT4に再びSiH2Cl2の供給を止め、２度めの膜質
改善を行ない、T4から２分経過したT5でSiH2Cl2の供給
を再開する。T5から６分経過したT6の時点で既にシリコ
ン窒化膜は100Å成長しているが、最上層のシリコン窒
化膜の膜質の改善を行なうためにT6の時点ではNH3の供
給は止めずにSiH2Cl2の供給のみを停止する。T6から２
分経過したT7でNH3の供給を停止し、シリコン窒化膜の
成長工程を終了する。Maximum flow rate R1 of the SiH2 Cl2 in this embodiment 25 sccm, NH3
Maximum flow rate R2 of is 1.3Slm. At time T1, SiH2 Cl
Open valves for2 and NH3 and start growing. Once the silicon nitride film that has elapsed from the time ie T1 of the T2 grown 35 Å 7 minutes closing the valve of the SiH2 Cl2. Here, by supplying only NH3, the film quality of the grown silicon nitride film is improved. Again opening the valve of the SiH2 Cl2 at T3 from T2 has elapsed 2 minutes to start the growth of a silicon nitride film. T3 from stopping again the supply of SiH2 Cl2 to T4 after 7 minutes, subjected to quality improvements for the second time, resumes the supply of the SiH2 Cl2 at T5 has elapsed from T4 2 minutes. Although already a silicon nitride film at the time of T6 that has elapsed since T5 6 minutes are 100Å growth, the supply of NH3 is stopped not at the time of T6 in order to perform the improvement of the quality of the top layer of the silicon nitride film Only the supply of SiH2 Cl2 is stopped. T6 to 2
In T7 which is divided passed to stop the supply of NH3, and ends the process of growing the silicon nitride film.
第２図は本発明の第２の実施例のSiH2Cl2,NH3のガス
・フローを示すタイムチャートである。FIG. 2 is a time chart showing a gas flow of SiH2 Cl2 and NH3 according to asecond embodiment of the present invention.
本実施例においては、SiH2Cl2を短かい周期で供給・
停止をくり返すことを特徴としている。第１の実施例と
同一条件、即ち、成長温度750℃、SiH2Cl2流量25sccm、
NH3流量1.3slm、成長圧力0.2Torrにおいて、例えば一周
期中でのSiH2Cl2供給期間t1を100秒、SiH2Cl2停止期間t
2を20秒とすると、実効的な成長速度はとなる。In this embodiment, SiH2 Cl2 is supplied in a short cycle.
It is characterized by stopping repeatedly. The same conditions as in the first embodiment, namely, a growth temperature of 750 ° C., a SiH2 Cl2 flow rate of 25 sccm,
At an NH3 flow rate of 1.3 slm and a growth pressure of 0.2 Torr, for example, the SiH2 Cl2 supply period t1 in one cycle is 100 seconds, and the SiH2 Cl2 stop period t
If 2 is 20 seconds, the effective growth rate is Becomes
T8においてSiH2Cl2およびNH3の供給を開始する。T8か
らt1＝100秒経過したT9においてSiH2Cl2の供給を停止す
る。t2＝20秒後即ちT10の時点で再びSiH2Cl2の供給を開
始する。以後t1秒のSiH2Cl2の供給、t2秒のSiH2Cl2の停
止を繰り返す。T8から24分経過した時点T11で100Åのシ
リコン窒化膜の成長が完了するので、SiH2Cl2の供給を
停止し、そのt2秒後のT12において、NH3の供給を停止
し、シリコン窒化膜の成長工程を完了する。Starts supplying the SiH2 Cl2 and NH3 in the T8. To stop the supply of the SiH2 Cl2 at T9 has elapsed t1 = 100 seconds T8. t2 = restarts the supply of the SiH2 Cl2 at a later point in time i.e. T10 20 seconds. Thereafter, supply of SiH2 Cl2 for t1second and stop of SiH2 Cl2 for t2 seconds are repeated. Since 100Å growth of silicon nitride film at the time T11 from T8 has passed 24 minutes is complete, SiH2 the supply of Cl2 is stopped, the T12 after the t2 seconds to stop the supply of NH3 Then, the step of growing the silicon nitride film is completed.
本実施例においては、SiH2Cl2の供給・停止を短かい
周期で行なうために、より均一なシリコン窒化膜を得る
ことができる。In the present embodiment, a more uniform silicon nitride film can be obtained because supply and stop of SiH2 Cl2 are performed in a short cycle.
［発明の効果］ 以上説明したように本発明は、SiH4あるいはSiH2Cl2
およびNH3を原料として減圧CVD法によりシリコン窒化膜
を成長させる方法において、成長途中にSiH4あるいはSi
H2Cl2の供給を停止しNH3のみを供給する工程を有するこ
とにより、シリコン窒化膜の膜質の向上が計られ、耐酸
化性に優れ、リーク電流の小さなシリコン窒化膜を得る
ことができ、半導体装置の歩留りの向上およびチップサ
イズの縮小が可能となる効果がある。[Effects of the Invention] As described above, the present invention relates to SiH4 or SiH2 Cl2
In the method of growing a silicon nitride film by low pressure CVD using NH3 and NH3 as raw materials, SiH4 or Si
With the step of stopping the supply of H2 Cl2 and supplying only NH3 , the quality of the silicon nitride film can be improved, and a silicon nitride film with excellent oxidation resistance and small leak current can be obtained. This has the effect of improving the yield of semiconductor devices and reducing the chip size.
第１図は本発明の半導体装置の製造方法の第１の実施例
のガスフローを示すタイムチャート、第２図は本発明の
第２の実施例のガスフローを示すタイムチャートであ
る。 R1……SiH2Cl2の最大流量、 R2……NH3の最大流量、 T1……第１の成長開始時間、 T2……第１の成長終了時間、 T3……第２の成長開始時間、 T4……第２の成長終了時間、 T5……第３の成長開始時間、 T6……第３の成長終了時間、 T7……成長工程完了時間、 T8……成長開始時間、 T9……成長終了時間、 T10……窒化処理終了時間、 t1……SiH2Cl2供給期間、 t2……SiH2Cl2停止期間。FIG. 1 is a time chart showing a gas flow of a first embodiment of the method of manufacturing a semiconductor device of the present invention, and FIG. 2 is a time chart showing a gas flow of a second embodiment of the present invention. R1 ... maximum flow rate of SiH2 Cl2 , R2 ... maximum flow rate of NH3 , T1 ... first growth start time, T2 ... first growth end time, T3 ... second The growth start time of T4, the second growth end time, T5, the third growth start time, T6, the third growth end time, T7, the growth step completion time, T8, ... growth start time, T9 ...... completion of the growth period, T10 ...... nitriding end time, t1 ...... SiH2 Cl2 supply period, t2 ...... SiH2 Cl2 suspension period.
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4611190AJP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4611190AJP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
| Publication Number | Publication Date |
|---|---|
| JPH03248427A JPH03248427A (en) | 1991-11-06 |
| JP2936623B2true JP2936623B2 (en) | 1999-08-23 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4611190AExpired - Fee RelatedJP2936623B2 (en) | 1990-02-26 | 1990-02-26 | Method for manufacturing semiconductor device |
| Country | Link |
|---|---|
| JP (1) | JP2936623B2 (en) |
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| Publication number | Publication date |
|---|---|
| JPH03248427A (en) | 1991-11-06 |
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| FPAY | Renewal fee payment (prs date is renewal date of database) | Free format text:PAYMENT UNTIL: 20080611 Year of fee payment:9 | |
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