【０００１】[0001]
【産業上の利用分野】本発明は、半導体基板の製造方法
及びその方法に用いる装置に関する。更に詳しくは、例
えば半導体基板の表面側に拡散法により高濃度不純物領
域を形成する際、半導体基板の裏面側にも不純物が拡散
されることを防止する保護膜を形成する方法及びその方
法を実施するのに適した装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor substrate and an apparatus used for the method. More specifically, for example, when a high-concentration impurity region is formed on a front surface side of a semiconductor substrate by a diffusion method, a method of forming a protective film for preventing impurities from being diffused also on the back surface side of the semiconductor substrate and the method are implemented. To a device suitable for doing so.
【０００２】[0002]
【発明の背景技術】半導体装置製造技術において、各種
の回路素子を形成する場合、例えば、半導体基板に高濃
度の埋込層を形成した後、その上にエピタキシャル層を
形成し、このエピタキシャル層に各種素子を形成するこ
とが行われている。2. Description of the Related Art In the semiconductor device manufacturing technology, when various circuit elements are formed, for example, a high-concentration buried layer is formed on a semiconductor substrate, and then an epitaxial layer is formed thereon. Various elements are being formed.
【０００３】上記のようにして半導体装置を製造する場
合、不純物を拡散して埋込層を形成する際に、半導体基
板の表面部と同様に、側面部及び裏面部にも不純物が高
濃度に拡散される。その後、エピタキシャル層を形成す
る際に側面部及び裏面部の不純物がエピタキシャル層形
成工程時の気相エッチングによって気相中に一旦放出さ
れた後、エピタキシャル層内に再度取り込まれる。この
ような現象はオートドーピングと呼ばれる。In the case of manufacturing a semiconductor device as described above, when the impurity is diffused to form a buried layer, the impurity is formed at a high concentration on the side surface and the back surface as well as on the surface of the semiconductor substrate. Spread. Thereafter, when the epitaxial layer is formed, the impurities on the side surface and the back surface are once released into the gas phase by the gas phase etching in the epitaxial layer forming step, and then taken in the epitaxial layer again. Such a phenomenon is called auto doping.
【０００４】このオートドーピングが起きると、エピタ
キシャル層の不純物濃度が変化し、エピタキシャル層内
の不純物濃度が不均一化してしまう。このような不都合
を回避するため、埋込層形成のための拡散工程を行う前
に、半導体基板の裏面に予め熱酸化膜等からなる保護膜
を形成しておき、この保護膜によって半導体基板の裏面
部への不純物拡散を防止する方法がある。When this auto-doping occurs, the impurity concentration in the epitaxial layer changes, and the impurity concentration in the epitaxial layer becomes non-uniform. In order to avoid such inconvenience, before performing a diffusion step for forming a buried layer, a protective film made of a thermal oxide film or the like is formed in advance on the back surface of the semiconductor substrate, and the protective film is used to protect the semiconductor substrate. There is a method for preventing impurity diffusion to the back surface.
【０００５】具体的には、例えば半導体基板の両主面に
熱酸化膜を形成し、表面部にフォトレジストを塗布して
パターニングした後、半導体基板の裏面部にもレジスト
（酸化膜用エッチング液に耐えるレジストであり、前記
フォトレジストも含む。）を塗布して熱酸化膜を保護し
ておき、埋込層を形成するために表面側の熱酸化膜をフ
ッ化アンモニウムとフッ酸の混合水溶液によりパターン
エッチングする。この際、裏面部にもレジストを塗布し
てあるので、裏面全面の熱酸化膜がエッチングされずに
残り、フォトレジスト及びレジスト除去後に埋込層形成
のための拡散工程を行えば、裏面全面に残った熱酸化膜
の存在により裏面部への不純物の拡散を防止することが
できる。More specifically, for example, a thermal oxide film is formed on both main surfaces of a semiconductor substrate, a photoresist is applied to the surface portion and patterned, and then a resist (an etching solution for an oxide film) is formed on the back surface portion of the semiconductor substrate. The thermal oxide film is protected by applying a photoresist, and the thermal oxide film on the surface is coated with an aqueous solution of ammonium fluoride and hydrofluoric acid to form a buried layer. Pattern etching. At this time, since the resist is also applied to the back surface, the thermal oxide film on the entire back surface remains without being etched, and if a diffusion process for forming a buried layer is performed after the removal of the photoresist and the resist, the thermal oxide film is formed on the entire back surface. The presence of the remaining thermal oxide film can prevent diffusion of impurities to the back surface.
【０００６】しかし、従来、半導体基板の裏面へのレジ
ストの塗布は手作業によって行わなければならなかった
ため、製造ラインの自動化が図れなかった。これは、ス
ピンナを用いて基板裏面部へレジストを塗布すると、基
板表面部のパターニングされたフォトレジスト膜面をチ
ャックすることになるので、スピンナのチャックとパタ
ーニングされたフォトレジスト膜との間にパーティクル
（塵埃）が挟み込まれる等によりフォトレジスト膜が損
傷し、パターニング不良を招くピンホール等が形成され
る恐れがあったからである。However, conventionally, the application of the resist to the back surface of the semiconductor substrate had to be performed manually, so that the automation of the production line could not be achieved. This is because applying a resist to the backside of the substrate using a spinner will chuck the patterned photoresist film surface on the front surface of the substrate, so particles between the chuck of the spinner and the patterned photoresist film This is because the photoresist film may be damaged due to, for example, the insertion of (dust) and pinholes or the like may be formed, which may cause patterning failure.
【０００７】そこで、スピンナにより半導体基板の裏面
部にレジストを塗布する前に、表面部に形成されたフォ
トレジスト膜の上に水溶性樹脂を塗布し、形成された水
溶性樹脂膜を介してチャックする方法が提案されている
（特開平２−２０１９２７号参照）。半導体基板の裏面
部にレジストを塗布した後は、半導体基板を純水等の水
溶性樹脂用リンス液の入ったリンス槽に浸漬し、水溶性
樹脂を剥離して通常の工程を続行する。Therefore, before applying the resist on the back surface of the semiconductor substrate by the spinner, a water-soluble resin is applied on the photoresist film formed on the front surface, and the chuck is inserted through the formed water-soluble resin film. A method has been proposed (see JP-A-2-201927). After the resist is applied to the back surface of the semiconductor substrate, the semiconductor substrate is immersed in a rinsing bath containing a rinsing liquid for a water-soluble resin such as pure water to remove the water-soluble resin, and the normal process is continued.
【０００８】この方法によれば、表面部のフォトレジス
ト膜は水溶性樹脂膜によって保護されているので、半導
体基板の表面側をチャックしてもフォトレジスト膜を損
傷することがない。従って、スピンナを用いて半導体基
板の裏面部にレジストを塗布することが可能となり、工
程の自動化を図ることができる。According to this method, since the photoresist film on the surface is protected by the water-soluble resin film, the photoresist film is not damaged even if the front surface of the semiconductor substrate is chucked. Therefore, it is possible to apply a resist to the back surface of the semiconductor substrate using a spinner, and it is possible to automate the process.
【０００９】[0009]
【発明が解決しようとする課題】しかし、上記のような
従来の方法では、半導体基板の裏面部にレジストを塗布
後、半導体基板を剥離槽に浸漬して水溶性樹脂を除去し
ても、水溶性樹脂を完全に除去することができなかっ
た。すなわち、水溶性樹脂の一部が基板周縁部（面取り
部）に残留することがあった。However, in the conventional method as described above, even if the semiconductor substrate is immersed in a peeling tank to remove the water-soluble resin after the resist is applied to the back surface of the semiconductor substrate, the water-soluble resin is removed. The conductive resin could not be completely removed. That is, a part of the water-soluble resin sometimes remains on the peripheral portion (chamfered portion) of the substrate.
【００１０】基板周縁部に水溶性樹脂が残留してしまう
原因は、水溶性樹脂やレジストが基板周縁部で塗布面の
反対面側まで回り込んで付着することによる。これを図
４を参照して説明する。ここでは、図４（Ａ）に示すよ
うに、半導体基板２０の表裏全面に熱酸化膜２１を形成
した後、表面部にパターニングしたフォトレジスト２２
膜を形成した基板（以下、この加工された基板を「半導
体基板２０」と総称する。）に処理を施す場合の例を示
す。The reason why the water-soluble resin remains on the peripheral portion of the substrate is that the water-soluble resin or the resist goes around and adheres to the opposite side of the coating surface at the peripheral portion of the substrate. This will be described with reference to FIG. Here, as shown in FIG. 4A, after a thermal oxide film 21 is formed on the entire front and back surfaces of the semiconductor substrate 20, a patterned photoresist 22 is formed on the surface.
An example in which processing is performed on a substrate on which a film is formed (hereinafter, this processed substrate is generally referred to as a “semiconductor substrate 20”) will be described.
【００１１】この半導体基板２０の表面側を上方に向
け、裏面側を水溶性樹脂塗布用のスピンナのチャック３
０に吸着させ、上方のノズル３１から半導体基板２０の
表面中央付近に水溶性樹脂２３を滴下し、半導体基板２
０を高速回転させて余分な水溶性樹脂２３を飛散させて
所定膜厚の水溶性樹脂２３膜を形成する（図４
（Ｂ））。このとき、図から分るように、水溶性樹脂２
３は半導体基板２０の周縁部の裏面側まで回り込んで付
着する。The front side of the semiconductor substrate 20 is directed upward, and the back side is a spinner chuck 3 for applying a water-soluble resin.
0, the water-soluble resin 23 is dropped from the upper nozzle 31 near the center of the surface of the semiconductor substrate 20, and the semiconductor substrate 2
0 is rotated at a high speed to scatter excess water-soluble resin 23 to form a water-soluble resin 23 film having a predetermined thickness (FIG. 4).
(B)). At this time, as can be seen from FIG.
The reference numeral 3 extends to and adheres to the back side of the peripheral portion of the semiconductor substrate 20.
【００１２】次に、半導体基板２０を反転させ、半導体
基板２０の表面側をレジスト塗布用のスピンナのチャッ
ク４０に吸着させ（図４（Ｃ））、上方のノズル４１か
ら半導体基板２０の裏面中央付近にレジスト２４を滴下
し、半導体基板２０を高速回転させて余分なレジスト２
４を飛散させて所定膜厚のレジスト２４膜を形成する
（図４（Ｄ））。Next, the semiconductor substrate 20 is turned over, and the front side of the semiconductor substrate 20 is attracted to a chuck 40 of a spinner for applying a resist (FIG. 4C). A resist 24 is dropped in the vicinity, and the semiconductor substrate 20 is rotated at a high speed to remove excess resist 2.
4 are scattered to form a resist 24 film having a predetermined thickness (FIG. 4D).
【００１３】このとき、図から分るように、レジスト２
４は半導体基板２０の周縁部の表面側（下方側）まで回
り込んで付着し、水溶性樹脂２３の一部を被覆した状態
となる。この半導体基板２０を剥離槽に浸漬して水溶性
樹脂２３を除去しても、レジスト２４に被覆された部分
の水溶性樹脂２３が残留物として残ってしまう（図４
（Ｅ））。At this time, as can be seen from FIG.
4 wraps around and adheres to the surface side (lower side) of the peripheral portion of the semiconductor substrate 20, and becomes a state in which a part of the water-soluble resin 23 is covered. Even if the semiconductor substrate 20 is immersed in a stripping bath to remove the water-soluble resin 23, the water-soluble resin 23 in the portion covered with the resist 24 remains as a residue (FIG. 4).
(E)).
【００１４】上記のように水溶性樹脂２３が残留した半
導体基板２０を、通常用いられる公転式乾燥機で乾燥す
ると、基板周縁部に残留していた水溶性樹脂２３が半導
体基板２０の表面側に流れ出し、次に行う熱酸化膜２１
のパターンエッチング工程での不具合の原因となってい
た。すなわち、半導体基板２０の表面側に流れ出した水
溶性樹脂２３は、パターニングしたフォトレジスト２２
膜を覆ってしまい、熱酸化膜２１の適切なパターンエッ
チングを妨げてしまう場合があった。When the semiconductor substrate 20 on which the water-soluble resin 23 remains as described above is dried by a commonly used revolving drier, the water-soluble resin 23 remaining on the peripheral portion of the substrate is deposited on the surface side of the semiconductor substrate 20. The thermal oxide film 21 which flows out and is performed next
In the pattern etching process. That is, the water-soluble resin 23 flowing out to the surface side of the semiconductor substrate 20 is
In some cases, the thermal oxide film 21 may be covered by the film, preventing proper pattern etching of the thermal oxide film 21.
【００１５】本発明はかかる問題点に鑑みてなされたも
ので、水溶性樹脂が基板周縁部に残留物として残らず、
また残ったとしても半導体基板の表面に流れ出して不具
合を生じさせることのない半導体基板の製造方法を提供
することを目的とする。The present invention has been made in view of such a problem, and the water-soluble resin does not remain as a residue on the peripheral portion of the substrate.
It is another object of the present invention to provide a method of manufacturing a semiconductor substrate which does not flow out to the surface of the semiconductor substrate even if it remains and does not cause a problem.
【００１６】また本発明は、上記方法を行うのに適した
装置を提供することを目的としている。Another object of the present invention is to provide an apparatus suitable for performing the above method.
【００１７】[0017]
【課題を解決するための手段】本発明は、特許請求の範
囲の請求項１に記載したように、半導体基板の一主面
（以下「表面」という。）を支持した状態で該表面の反
対側の一主面（以下「裏面」という。）にスピンナを用
いてレジストを塗布するために、前記表面上に水溶性樹
脂膜を形成して該表面部を保護し、次に該水溶性樹脂膜
を介して前記表面部を支持した状態で前記裏面部にスピ
ンナを用いてレジストを塗布し、さらに、前記水溶性樹
脂膜を水溶性樹脂用剥離液により剥離する一連の工程を
含む半導体基板の製造方法において、前記表面部に前記
水溶性樹脂を塗布した後に前記裏面側の周縁部を水溶性
樹脂用剥離液によりリンスして該裏面側に回り込んで付
着している前記水溶性樹脂を除去する工程と、該裏面部
に前記スピンナを用いて前記レジストを塗布した後に前
記表面側の周縁部をレジスト用剥離液によりリンスして
該表面側に回り込んで付着している該レジストを除去す
る工程のいずれか一工程又は両工程を行い、さらに、前
記水溶性樹脂膜を剥離液により剥離した後に、前記半導
体基板を高速で自転させて乾燥することを特徴とする半
導体基板の製造方法を提供する。SUMMARY OF THE INVENTION According to the present invention, as described in claim 1 of the present invention, one surface of a semiconductor substrate (hereinafter referred to as "surface") is supported and opposite to the surface. In order to apply a resist to one principal surface of the side (hereinafter referred to as “back surface”) using a spinner, a water-soluble resin film is formed on the surface to protect the surface portion, and then the water-soluble resin A resist is applied to the back surface portion using a spinner while supporting the front surface portion via a film, and further includes a series of steps of peeling the water-soluble resin film with a water-soluble resin peeling liquid. In the manufacturing method, after the water-soluble resin is applied to the front surface portion, the peripheral portion on the back surface side is rinsed with a water-soluble resin release liquid to remove the water-soluble resin that has wrapped around and adhered to the back surface side. And using the spinner on the back surface. Performing one or both of the steps of rinsing the peripheral portion of the surface side with a resist stripping solution after applying the resist and removing the resist that has adhered by wrapping around the surface side, Further, the present invention provides a method for manufacturing a semiconductor substrate, wherein the semiconductor substrate is rotated at a high speed and dried after the water-soluble resin film is peeled off by a peeling liquid.
【００１８】前記水溶性樹脂の塗布手段は例えばスピン
ナである。また、前記水溶性樹脂を塗布して前記水溶性
樹脂膜を形成した後に該水溶性樹脂膜をベークするよう
にしてもよい。さらに、前記半導体基板の前記裏面側を
前記水溶性樹脂用剥離液によりリンスした後、前記裏面
部に前記レジストを塗布する前に、該裏面部を疎水処理
するようにしてもよい。The means for applying the water-soluble resin is, for example, a spinner. Alternatively, the water-soluble resin film may be baked after applying the water-soluble resin to form the water-soluble resin film. Further, after rinsing the back surface side of the semiconductor substrate with the stripping solution for a water-soluble resin, before applying the resist to the back surface portion, the back surface portion may be subjected to a hydrophobic treatment.
【００１９】前記疎水処理は、例えばヘキサメチルジシ
ラザンを主成分とする疎水処理剤を塗布するものであ
る。また、前記水溶性樹脂は例えばポリビニルアルコー
ルである。In the hydrophobic treatment, for example, a hydrophobic treatment agent containing hexamethyldisilazane as a main component is applied. The water-soluble resin is, for example, polyvinyl alcohol.
【００２０】また本発明は、特許請求の範囲の請求項７
に記載したように、半導体基板の一主面（以下「表面」
という。）を支持した状態で該表面の反対側の一主面
（以下「裏面」という。）にレジストを塗布するため
に、前記表面上に水溶性樹脂膜を形成して該表面部を保
護し、次に該水溶性樹脂膜を介して前記表面部を支持し
た状態で前記裏面部にレジストを塗布し、さらに、前記
水溶性樹脂膜を水溶性樹脂用剥離液により剥離する一連
の工程を含む半導体基板の製造方法に用いる装置におい
て、前記半導体基板の前記表面部に水溶性樹脂を塗布す
る水溶性樹脂塗布手段と、該水溶性樹脂をベークする水
溶性樹脂ベーク手段と、前記表面部に前記水溶性樹脂膜
が形成された前記半導体基板の前記裏面部にレジストを
塗布するレジスト塗布手段と、前記裏面部にレジスト膜
が形成された前記半導体基板の前記表面側の周縁部をレ
ジスト用剥離液によりリンスする周縁部レジスト剥離手
段と、前記レジスト膜をベークするレジストベーク手段
と、前記水溶性樹脂膜を剥離する水溶性樹脂剥離手段
と、前記半導体基板を自転させて乾燥する自転乾燥手段
とを備えたことを特徴とする半導体基板の製造装置を提
供する。[0020] The present invention also relates to claim 7 of the present invention.
As described in, one main surface of the semiconductor substrate (hereinafter referred to as “front surface”)
That. In order to apply a resist on one main surface opposite to the front surface (hereinafter referred to as "back surface") while supporting the surface, a water-soluble resin film is formed on the front surface to protect the front surface portion, Next, a semiconductor comprising a series of steps of applying a resist to the back surface portion while supporting the front surface portion via the water-soluble resin film, and further removing the water-soluble resin film with a water-soluble resin release liquid. In an apparatus used for a method of manufacturing a substrate, a water-soluble resin applying means for applying a water-soluble resin to the surface portion of the semiconductor substrate, a water-soluble resin baking means for baking the water-soluble resin, and the water-soluble resin Resist applying means for applying a resist to the back surface of the semiconductor substrate on which the conductive resin film is formed, and a peripheral portion on the front surface side of the semiconductor substrate on which the resist film is formed on the back surface using a resist remover. Rinse Peripheral resist stripping means, resist baking means for baking the resist film, water-soluble resin stripping means for stripping the water-soluble resin film, and spin-drying means for spinning and drying the semiconductor substrate An apparatus for manufacturing a semiconductor substrate characterized by the following.
【００２１】上記装置はさらに、前記表面部に前記水溶
性樹脂膜が形成された前記半導体基板の前記裏面部の周
縁部を水溶性樹脂用剥離液によりリンスする周縁部水溶
性樹脂剥離手段と、前記レジスト塗布手段により前記裏
面部に前記レジストを塗布する前に該裏面部に疎水処理
剤を塗布して疎水処理するための疎水処理剤塗布手段と
を備えていてもよい。また、前記水溶性樹脂膜を剥離す
る水溶性樹脂剥離手段は例えばスピンナからなり、この
スピンナが前記自転乾燥手段を兼ねていてもよい。The above apparatus further comprises a peripheral edge water-soluble resin peeling means for rinsing a peripheral edge of the back surface portion of the semiconductor substrate having the water-soluble resin film formed on the front surface portion with a water-soluble resin release liquid, Before applying the resist to the back surface by the resist applying unit, a hydrophobic treating agent applying unit may be provided for applying a hydrophobic treating agent to the back surface to perform a hydrophobic treatment. Further, the water-soluble resin peeling means for peeling off the water-soluble resin film comprises, for example, a spinner, and this spinner may also serve as the rotation drying means.
【００２２】[0022]
【作用】本発明においては、半導体基板の表面部に水溶
性樹脂を塗布した後に裏面側の周縁部を水溶性樹脂用剥
離液によりリンス（これを「バックリンス」と言う。）
して半導体基板の裏面側に回り込んで付着している水溶
性樹脂を除去する工程と、半導体基板の裏面部にレジス
トを塗布した後に表面側の周縁部をレジスト用剥離液に
よりリンス（バックリンス）して半導体基板の表面側に
回り込んで付着しているレジストを除去する工程のいず
れか一工程又は両工程を行うので、半導体基板の周縁部
の水溶性樹脂の一部がレジストによって被覆される状態
を解消することができ、その後に水溶性樹脂膜を剥離す
る際に水溶性樹脂が周縁部で部分的に残存してしまうこ
とがなくなる。In the present invention, after a water-soluble resin is applied to the front surface of a semiconductor substrate, the peripheral portion on the back side is rinsed with a water-soluble resin stripper (this is called "back rinse").
Removing the water-soluble resin adhering to the back surface of the semiconductor substrate by applying a resist to the back surface of the semiconductor substrate, and then rinsing (back-rinsing) the peripheral portion of the front surface with a resist remover. ) To remove one or both of the steps of removing the resist adhering to the surface side of the semiconductor substrate, so that a portion of the water-soluble resin at the peripheral edge of the semiconductor substrate is covered with the resist. Can be eliminated, and when the water-soluble resin film is subsequently peeled off, the water-soluble resin does not partially remain at the periphery.
【００２３】上記バックリンスは、水溶性樹脂塗布後及
びレジスト塗布後の両方で行うと水溶性樹脂の残存によ
る不具合をより確実に防止できるが、工程の煩雑性等を
考慮すると、いずれか一方を行うようにしても十分効果
を発揮する。If the back rinsing is performed both after the application of the water-soluble resin and after the application of the resist, the problem caused by the remaining water-soluble resin can be more surely prevented. Even if it is performed, the effect is sufficiently exhibited.
【００２４】なお、水溶性樹脂塗布後のバックリンスを
行う場合は、その後に半導体基板の裏面部に塗布するレ
ジストと半導体基板との密着性が不十分となるので、レ
ジスト塗布前に該裏面部を例えばヘキサメチルジシラザ
ンを主成分とする疎水処理剤を塗布して疎水処理するの
が好ましい。When back rinsing is performed after the application of the water-soluble resin, the adhesiveness between the resist applied to the back surface of the semiconductor substrate and the semiconductor substrate becomes insufficient. For example, it is preferable to apply a hydrophobic treatment agent containing hexamethyldisilazane as a main component to perform a hydrophobic treatment.
【００２５】レジスト塗布後のバックリンスのみを行
い、水溶性樹脂塗布後のバックリンスを省略する場合
は、レジスト塗布前の疎水処理も省略することができ、
工程の簡略化が図れる。水溶性樹脂塗布後のバックリン
スを省略した場合、半導体基板の裏面側に回り込んだ水
溶性樹脂の一部がその後に塗布されるレジストによって
被覆され、水溶性樹脂の剥離工程後にも水溶性樹脂が基
板周縁部に僅かに残存することがあるが、この場合に残
存する水溶性樹脂は半導体基板の周縁部の裏面側にのみ
存在するので、その後に乾燥工程を行っても水溶性樹脂
の残留物は半導体基板の表面側に流出する可能性は極め
て小さい。When only back rinsing after application of the resist is performed and back rinsing after application of the water-soluble resin is omitted, hydrophobic treatment before application of the resist can be omitted.
The process can be simplified. If the back rinse after the application of the water-soluble resin is omitted, a part of the water-soluble resin that has wrapped around the back side of the semiconductor substrate is covered by the subsequently applied resist, and the water-soluble resin is removed even after the step of removing the water-soluble resin. May remain slightly on the peripheral edge of the substrate, but in this case, the remaining water-soluble resin exists only on the back side of the peripheral edge of the semiconductor substrate. It is extremely unlikely that an object flows out to the front side of the semiconductor substrate.
【００２６】また本発明においては、水溶性樹脂膜を水
溶性樹脂用剥離液により剥離した後、該半導体基板を従
来のような公転式乾燥機の代りに枚葉式の自転式乾燥機
等の自転乾燥手段を用いて乾燥するようにしたことによ
り、例え上記のように極く僅かに水溶性樹脂が半導体基
板の周縁部に残存する場合でも、半導体基板が自転する
ので水溶性樹脂は遠心力により半導体基板の外方へ飛散
し、半導体基板の中心側すなわち表面側に流れ出ること
がなく、不具合の発生の防止がより確実に達成できる。In the present invention, after the water-soluble resin film is peeled off by the water-soluble resin peeling liquid, the semiconductor substrate is replaced with a single-wafer type rotary dryer instead of a conventional revolving dryer. By drying using the spin-drying means, even if the water-soluble resin remains very slightly on the peripheral edge of the semiconductor substrate as described above, the water-soluble resin is centrifugally driven because the semiconductor substrate rotates. Thus, the semiconductor substrate is not scattered to the outside of the semiconductor substrate, and does not flow out to the center side, that is, the surface side of the semiconductor substrate, so that the occurrence of defects can be more reliably prevented.
【００２７】なお、前記水溶性樹脂は、例えばポリビニ
ルアルコールを用いることができるが、その他の水溶性
樹脂を用いることができることは言うまでもない。ま
た、水溶性樹脂を半導体基板に塗布した後にベークする
と、水溶性樹脂は保護膜としての役割を確実に果すのに
十分な硬度が得られる。As the water-soluble resin, for example, polyvinyl alcohol can be used, but it goes without saying that other water-soluble resins can be used. In addition, if the semiconductor substrate is baked after the water-soluble resin is applied to the semiconductor substrate, the water-soluble resin has sufficient hardness to reliably serve as a protective film.
【００２８】本発明は、特に前記半導体基板の表面部に
予め写真蝕刻法により所定のパターンが形成されたフォ
トレジスト膜を形成した後に前記水溶性樹脂膜を形成す
る場合に適している。パターニングされたフォトレジス
ト膜は特に保護される必要があり、水溶性樹脂による保
護が不可欠であるばかりでなく、水溶性樹脂が残存する
ことによる不具合も大きな問題となるからである。The present invention is particularly suitable for the case where the water-soluble resin film is formed after forming a photoresist film on which a predetermined pattern is formed in advance by a photolithography method on the surface of the semiconductor substrate. This is because the patterned photoresist film needs to be particularly protected, and not only protection by a water-soluble resin is indispensable, but also a problem caused by the remaining water-soluble resin becomes a serious problem.
【００２９】次に、本発明の半導体基板の製造装置にお
いては、前述した構成としたことにより、本発明の半導
体基板の製造方法を手作業なしに自動で行うことができ
る。すなわち、まず、スピンナ等の水溶性樹脂塗布手段
に半導体基板の表面側を上方に向けてセットし、半導体
基板の表面部に水溶性樹脂を塗布する。この場合、必要
に応じて、例えば下方から水溶性樹脂用剥離液（純水）
を吐出するノズルからなる周縁部水溶性樹脂剥離手段を
設けた場合は、この周縁部水溶性樹脂剥離手段により半
導体基板の裏面をリンス（バックリンス）し、半導体基
板の周縁部に回り込んで付着した水溶性樹脂を除去す
る。そして、この半導体基板を加熱炉等の水溶性樹脂ベ
ーク手段に搬送してベークし、水溶性樹脂を硬化させ
る。Next, in the apparatus for manufacturing a semiconductor substrate of the present invention, by adopting the above-described configuration, the method of manufacturing a semiconductor substrate of the present invention can be automatically performed without manual operation. That is, first, the surface side of the semiconductor substrate is set to a water-soluble resin application means such as a spinner with the front side facing upward, and the water-soluble resin is applied to the surface portion of the semiconductor substrate. In this case, if necessary, for example, a stripping solution for water-soluble resin (pure water) from below
In the case where a peripheral water-soluble resin peeling means comprising a nozzle for discharging the liquid is provided, the back surface of the semiconductor substrate is rinsed (back-rinsed) by the peripheral water-soluble resin peeling means, and the peripheral surface of the semiconductor substrate is wrapped and adhered. The water-soluble resin is removed. Then, the semiconductor substrate is transported to a water-soluble resin baking means such as a heating furnace and baked to cure the water-soluble resin.
【００３０】次に、表面部に水溶性樹脂膜が形成された
半導体基板を反転し、半導体基板の裏面を上方に向け直
す。ここで、前述のように周縁部水溶性樹脂剥離手段を
設けてバックリンスをした場合は、併せてスピンナ等の
疎水処理剤塗布手段も設けておき、これにレジスト塗布
前の半導体基板をセットして裏面部に疎水剤を塗布して
疎水処理を施す。Next, the semiconductor substrate having the water-soluble resin film formed on the front surface is turned over, and the back surface of the semiconductor substrate is turned upward. Here, when the peripheral edge water-soluble resin peeling means is provided and back-rinsing is performed as described above, a hydrophobic treatment agent application means such as a spinner is also provided, and the semiconductor substrate before resist application is set thereon. Then, a hydrophobic agent is applied to the back surface to perform a hydrophobic treatment.
【００３１】次に、この半導体基板を、スピンナ等のレ
ジスト塗布手段に裏面側を上方に向けてセットし、半導
体基板の裏面部にレジストを塗布する。そして、例えば
下方からレジスト用剥離液（酢酸ブチル等）を吐出する
ノズルからなる周縁部レジスト剥離手段により、半導体
基板の表面側の周縁部をリンス（バックリンス）し、半
導体基板の表面側に回り込んで付着したレジストを除去
する。そして、この半導体基板を加熱炉等のレジストベ
ーク手段に搬送してベークし、レジストを硬化させる。Next, this semiconductor substrate is set on a resist coating means such as a spinner with its back side facing upward, and a resist is applied to the back surface of the semiconductor substrate. Then, for example, the peripheral edge on the front side of the semiconductor substrate is rinsed (back rinsed) by a peripheral edge resist peeling means comprising a nozzle for discharging a resist peeling liquid (butyl acetate or the like) from below, and the semiconductor wafer is turned around the surface of the semiconductor substrate. Then, the resist adhering thereto is removed. Then, the semiconductor substrate is transferred to a resist baking means such as a heating furnace and baked to harden the resist.
【００３２】次に、裏面にレジスト膜が形成された半導
体基板を再び反転し、半導体基板の表面側を上方に向け
直す。この半導体基板を、スピンナ等よりなる水溶性樹
脂剥離手段に表面を上方に向けてセットし、上方から水
溶性樹脂用剥離液（純水）を散布して半導体基板の表面
部に形成されていた水溶性樹脂膜を剥離する。このスピ
ンナ等からなる水溶性剥離手段は自転乾燥手段を兼ねて
いてもよい。その場合には、水溶性樹脂用剥離液による
水溶性樹脂の剥離工程終了後、水溶性樹脂用剥離液の吐
出を止めた後も半導体基板を高速で回転させて乾燥す
る。このとき半導体基板は自転しているので、万一水溶
性樹脂の残留物が半導体基板の周縁部に存在していて
も、半導体基板の外方へ飛散するので、半導体基板の表
面側に流れ出ることはない。Next, the semiconductor substrate having the resist film formed on the back surface is again turned over, and the front surface side of the semiconductor substrate is turned upward. This semiconductor substrate was set on a water-soluble resin stripping means such as a spinner with its surface facing upward, and a water-soluble resin stripper (pure water) was sprayed from above to form the semiconductor substrate on the surface of the semiconductor substrate. Peel off the water-soluble resin film. The water-soluble peeling means composed of a spinner or the like may also serve as a spin-drying means. In this case, the semiconductor substrate is rotated at a high speed and dried even after the discharge of the water-soluble resin stripping liquid is stopped after the step of stripping the water-soluble resin with the water-soluble resin stripping liquid is completed. At this time, since the semiconductor substrate is rotating, even if a residue of the water-soluble resin is present on the periphery of the semiconductor substrate, the residue scatters outside the semiconductor substrate, so that the residue flows out to the surface side of the semiconductor substrate. There is no.
【００３３】上記各手段の間は、例えばローダー等の搬
送手段で接続され、本発明の方法が自動的に行われる。The above-mentioned units are connected by a transfer unit such as a loader, and the method of the present invention is automatically performed.
【００３４】[0034]
【実施例】以下、本発明の半導体基板の製造方法及びそ
の装置の実施例について、図面を参照しながら説明す
る。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor device manufacturing method and apparatus according to an embodiment of the present invention.
【００３５】図１及び図２は、本発明の半導体基板の製
造方法の工程の一実施例を示すものである。本実施例で
は、半導体基板の表面側に例えば埋込層形成のための拡
散工程を行う際、裏面側にも不純物が拡散されるのを防
止する保護膜（熱酸化膜）を形成する場合を例として示
す。FIGS. 1 and 2 show one embodiment of the steps of the method for manufacturing a semiconductor substrate according to the present invention. In this embodiment, when a diffusion step for forming a buried layer is performed on the front side of the semiconductor substrate, for example, a protective film (thermal oxide film) for preventing diffusion of impurities is also formed on the back side. Shown as an example.
【００３６】図３は、本実施例の半導体基板の製造方法
を自動で行う装置の実施例を示すブロック図である。本
装置の構成は、水溶性樹脂塗布用スピンナ５０、水溶性
樹脂ベーク用の加熱炉５１、反転機構５２、疎水処理剤
塗布用スピンナ５３、レジスト塗布用スピンナ５４、レ
ジストベーク用の加熱炉５５、反転機構５６、自転式乾
燥機兼用の水溶性樹脂剥離用スピンナ５７とからなる。FIG. 3 is a block diagram showing an embodiment of an apparatus for automatically performing the method of manufacturing a semiconductor substrate according to the present embodiment. The configuration of this apparatus includes a water-soluble resin coating spinner 50, a water-soluble resin baking heating furnace 51, a reversing mechanism 52, a hydrophobic treatment agent coating spinner 53, a resist coating spinner 54, a resist baking heating furnace 55, It comprises a reversing mechanism 56 and a water-soluble resin peeling spinner 57 which is also used as a rotary dryer.
【００３７】各構成部は例えば半導体基板を搬送する機
構によって相互に連結され、半導体基板はこの搬送機構
によって水溶性樹脂塗布用スピンナ５０から水溶性樹脂
剥離用スピンナ５７まで順次自動的に搬送されながら各
処理を受ける。The components are connected to each other by, for example, a mechanism for transporting the semiconductor substrate, and the semiconductor substrate is automatically transported from the water-soluble resin coating spinner 50 to the water-soluble resin peeling spinner 57 by the transport mechanism. Receive each process.
【００３８】次に、図３に示した構成の装置を用いて本
実施例の方法を行う場合の具体的工程について図１〜図
３を参照して説明する。まず、半導体基板２０を酸素あ
るいは水蒸気を含む酸化性雰囲気中で高温処理し、表裏
全面に熱酸化膜２１を形成した後、表面部にフォトレジ
スト２２を塗布し、露光、現像して所望のパターンを形
成する（図１（Ａ））。以下、この加工された基板を半
導体基板２０と総称する。Next, specific steps in the case where the method of this embodiment is performed using the apparatus having the configuration shown in FIG. 3 will be described with reference to FIGS. First, the semiconductor substrate 20 is subjected to a high-temperature treatment in an oxidizing atmosphere containing oxygen or water vapor to form a thermal oxide film 21 on the entire front and back surfaces. Is formed (FIG. 1A). Hereinafter, the processed substrate is referred to as a semiconductor substrate 20.
【００３９】次に、上記半導体基板２０の裏面側を水溶
性樹脂塗布用スピンナ５０のチャック５０ａに吸着さ
せ、上方のノズル５０ｂから半導体基板２０の表面中央
付近に、例えば固形分１５％のポリビニルアルコール樹
脂からなる水溶性樹脂２３を滴下する。そして、半導体
基板２０を例えば５０００ｒｐｍで高速回転させ、水溶
性樹脂２３膜の形成、乾燥を行う（図１（Ｂ））。この
とき、図から分るように、水溶性樹脂２３は半導体基板
２０の周縁部の裏面側まで回り込んで形成される。Next, the back side of the semiconductor substrate 20 is adsorbed to the chuck 50a of the spinner 50 for applying a water-soluble resin, and the upper nozzle 50b is moved to the vicinity of the center of the surface of the semiconductor substrate 20, for example, polyvinyl alcohol having a solid content of 15%. A water-soluble resin 23 made of a resin is dropped. Then, the semiconductor substrate 20 is rotated at a high speed of, for example, 5000 rpm, and a water-soluble resin 23 film is formed and dried (FIG. 1B). At this time, as can be seen from the figure, the water-soluble resin 23 is formed so as to extend to the back side of the peripheral portion of the semiconductor substrate 20.
【００４０】次に、下部のバックリンスノズル５０ｃか
ら純水等の水溶性樹脂用剥離液を半導体基板２０の裏面
側の周縁部寄りに散布し、半導体基板２０の周縁部の裏
面側（下方側）に回り込んで付着している水溶性樹脂２
３を除去する（図１（Ｃ））。Next, a water-soluble resin stripper such as pure water is sprayed from the lower back rinse nozzle 50c toward the periphery of the back surface of the semiconductor substrate 20, and the back surface (lower side) of the periphery of the semiconductor substrate 20 is sprayed. Water-soluble resin 2 wrapping around and adhering
3 is removed (FIG. 1C).
【００４１】次に、水溶性樹脂２３を表面部に塗布した
半導体基板２０を加熱炉５１にて１１０℃、１分のベー
キングを行う。これによって約１μｍの膜厚を持つ水溶
性樹脂２３膜が形成される。Then, the semiconductor substrate 20 having the surface coated with the water-soluble resin 23 is baked in a heating furnace 51 at 110 ° C. for 1 minute. As a result, a water-soluble resin 23 film having a thickness of about 1 μm is formed.
【００４２】次に、半導体基板２０を反転機構５２によ
り反転させ、半導体基板２０の表面側を疎水処理剤塗布
用スピンナ５３のチャック５３ａに吸着させる（図１
（Ｄ））。このとき、半導体基板２０の表面部のパター
ニングされたフォトレジスト２２は水溶性樹脂２３によ
り保護されているので、チャック４０に吸着させる際に
パーティクルが挟み込まれてもピンホール等が生じると
いった不具合が生じない。次に、上方のノズル５３ｂか
ら半導体基板２０の裏面部中央付近に、例えばヘキサメ
チルジシラザンを主成分とする疎水処理剤を滴下して半
導体基板２０を高速回転させ、疎水処理を施す。Next, the semiconductor substrate 20 is reversed by the reversing mechanism 52, and the surface side of the semiconductor substrate 20 is attracted to the chuck 53a of the spinner 53 for applying the hydrophobic treatment agent (FIG. 1).
(D)). At this time, since the patterned photoresist 22 on the surface portion of the semiconductor substrate 20 is protected by the water-soluble resin 23, there is a problem that a pinhole or the like is generated even if the particles are sandwiched when adsorbed on the chuck 40. Absent. Next, a hydrophobic treatment agent containing, for example, hexamethyldisilazane as a main component is dropped from the upper nozzle 53b to the vicinity of the center of the back surface of the semiconductor substrate 20, and the semiconductor substrate 20 is rotated at a high speed to perform a hydrophobic treatment.
【００４３】次に、半導体基板２０の表面側をレジスト
塗布用スピンナ５４のチャック５４ａに吸着させ、上方
のノズル５４ｂから半導体基板２０の裏面部中央付近に
レジスト２４を滴下し、半導体基板２０を約３０００ｒ
ｐｍで高速回転させて余分なレジストを振り切り、半導
体基板２０の裏面部にレジスト２４膜を形成する（図１
（Ｅ））。Next, the front side of the semiconductor substrate 20 is adsorbed to the chuck 54a of the resist coating spinner 54, and the resist 24 is dropped from the upper nozzle 54b to the vicinity of the center of the rear surface of the semiconductor substrate 20 to remove the semiconductor substrate 20. 3000r
The excess resist is shaken off by high-speed rotation at pm to form a resist 24 film on the back surface of the semiconductor substrate 20 (FIG. 1).
(E)).
【００４４】このとき、図から分るように、レジスト２
４膜は半導体基板２０の周縁部の表面側（下方側）まで
回り込んで形成され、水溶性樹脂２３の一部を被覆した
状態となる。そこで、下部のバックリンスノズル５４ｃ
から酢酸ブチル等のレジスト用剥離液を半導体基板２０
の裏面側の周縁部寄りに散布し、半導体基板２０の周縁
部の表面側（下方側）に回り込んで付着しているレジス
トを除去する（図２（Ｆ））。At this time, as can be seen from FIG.
The four films are formed so as to extend to the surface side (lower side) of the peripheral portion of the semiconductor substrate 20 and are in a state of covering a part of the water-soluble resin 23. Therefore, the lower back rinse nozzle 54c
A resist stripper such as butyl acetate from a semiconductor substrate 20
Is spread toward the peripheral portion on the back surface side of the semiconductor substrate 20, and the resist that has wrapped around and adheres to the front surface side (lower side) of the peripheral portion of the semiconductor substrate 20 is removed (FIG. 2F).
【００４５】その後、半導体基板２０を加熱炉５５にて
１１０℃、１分のベーキングを行う。次に、半導体基板
２０を反転機構５６により再び反転させ、半導体基板２
０の裏面側を水溶性樹脂剥離用スピンナ５７のチャック
５７ａに吸着させ、半導体基板２０を静止させた状態ま
たは低速で回転させた状態で、上方のノズル５７ｂから
半導体基板２０の表面部全面に水溶性樹脂用剥離液（純
水）を散布して水溶性樹脂２３を剥離し、その後、自転
式乾燥機を兼ねた水溶性樹脂剥離用スピンナ５７により
半導体基板２０を高速回転（例えば３０００ｒｐｍ、１
０秒の自転）させて乾燥する（図２（Ｇ））。Thereafter, the semiconductor substrate 20 is baked in a heating furnace 55 at 110 ° C. for one minute. Next, the semiconductor substrate 20 is again inverted by the inversion mechanism 56, and the semiconductor substrate 2
0 is adsorbed to the chuck 57a of the water-soluble resin peeling spinner 57, and the semiconductor substrate 20 is stopped or rotated at a low speed. The water-soluble resin 23 is peeled off by spraying a water-soluble resin stripper (pure water), and then the semiconductor substrate 20 is rotated at high speed (for example, 3000 rpm, 1 rpm) by a water-soluble resin peeling spinner 57 which also serves as a rotary dryer.
(0 second rotation) and dried (FIG. 2 (G)).
【００４６】次に、半導体基板２０の残存フォトレジス
ト２２及びレジスト２４をマスクにして熱酸化膜２１の
パターンエッチングを行い、半導体基板２０の表面の埋
込層形成予定領域上の熱酸化膜２１を選択的に除去して
パターニングする（図２（Ｈ））。そして、フォトレジ
スト２２及びレジスト２４を除去すると、表面側にパタ
ーニングされた熱酸化膜２１と、裏面側全面に熱酸化膜
２１が残る（図２（Ｉ））。Next, pattern etching of the thermal oxide film 21 is performed using the remaining photoresist 22 and the resist 24 of the semiconductor substrate 20 as a mask, and the thermal oxide film 21 on the buried layer formation region on the surface of the semiconductor substrate 20 is removed. It is selectively removed and patterned (FIG. 2H). Then, when the photoresist 22 and the resist 24 are removed, the thermal oxide film 21 patterned on the front surface side and the thermal oxide film 21 on the entire rear surface side remain (FIG. 2 (I)).
【００４７】上記のように半導体基板２０の裏面全面に
保護膜として残った熱酸化膜２１及び表面のパターニン
グされた熱酸化膜２１をマスクにして、アンチモン（Ｓ
ｂ）やボロン（Ｂ）等の不純物拡散を行うことにより、
表面側に埋込層等の不純物拡散層が形成される。裏面側
全面には熱酸化膜が残っているので、不純物が半導体基
板２０の裏面部に拡散されず、その後に行うエピタキシ
ャル工程等において基板裏面からの不純物のオートドー
ピングが防止できる。Using the thermal oxide film 21 remaining as a protective film on the entire back surface of the semiconductor substrate 20 and the patterned thermal oxide film 21 on the front surface as a mask, antimony (S
b) and boron (B) or the like to diffuse impurities,
An impurity diffusion layer such as a buried layer is formed on the surface side. Since the thermal oxide film remains on the entire rear surface side, the impurities are not diffused to the rear surface of the semiconductor substrate 20, and the auto doping of the impurities from the rear surface of the substrate can be prevented in a subsequent epitaxial process or the like.
【００４８】また、上記のように、半導体基板への水溶
性樹脂の塗布から剥離・乾燥までを自動的に行うことが
できる。Further, as described above, the steps from application of the water-soluble resin to the semiconductor substrate to peeling and drying can be automatically performed.
【００４９】以上、本発明の実施例を詳細に説明した
が、本発明は上記実施例に限定されるものではなく、そ
の要旨を逸脱しない範囲で種々変更可能であることはい
うまでもない。Although the embodiments of the present invention have been described in detail, the present invention is not limited to the above-described embodiments, and it goes without saying that various modifications can be made without departing from the gist of the present invention.
【００５０】例えば、前述したように水溶性樹脂のバッ
クリンス工程は必ずしも行う必要はなく、この工程を省
略することができる。その場合は疎水処理も必要がなく
なるのでこれも省略することができる。その場合、半導
体基板２０の周縁部の裏面側に回り込んで付着している
水溶性樹脂２３の一部がレジスト２４に被覆され、水溶
性樹脂２３が剥離工程後も除去されずに基板周縁部の裏
面側に残留物として僅かに残ってしまう可能性がある
が、その後の半導体基板２０の自転による高速回転によ
り残留物は外方へ飛散し、半導体基板２０の主面に流れ
出すことはなく、しかもこの残留物は基板周縁部の裏面
側に僅かに残るものなので、半導体基板２０の表面側に
流れ出す可能性は極めて少ない。For example, as described above, the step of back-rinsing the water-soluble resin is not necessarily performed, and this step can be omitted. In that case, since the hydrophobic treatment is not required, this can also be omitted. In that case, a part of the water-soluble resin 23 wrapping around and adhering to the back surface side of the peripheral portion of the semiconductor substrate 20 is covered with the resist 24, and the water-soluble resin 23 is not removed even after the peeling step and the substrate peripheral portion is not removed. There is a possibility that a small amount of residue may remain on the back side of the semiconductor substrate 20, but the residue scatters outward due to the subsequent high-speed rotation of the semiconductor substrate 20 and does not flow out to the main surface of the semiconductor substrate 20, In addition, since this residue slightly remains on the rear surface side of the peripheral portion of the substrate, the possibility of flowing out to the front surface side of the semiconductor substrate 20 is extremely small.
【００５１】また、上記実施例では水溶性樹脂の剥離手
段としてスピンナを用い、これが自転式乾燥機を兼ねる
ようにして水溶性樹脂の剥離及び自転乾燥を行うように
したが、水溶性樹脂の剥離手段として剥離液を入れた槽
を用い、これに半導体基板を浸漬して水溶性樹脂を剥離
し、その後に乾燥専用の自転式乾燥機を用いて半導体基
板の自転乾燥を行うようにしてもよい。In the above embodiment, a spinner is used as a water-soluble resin peeling means, and the water-soluble resin is peeled off and dried by rotating the spinner so as to serve also as a rotary dryer. As a means, a bath containing a stripping solution may be used, and the semiconductor substrate may be immersed in the bath to separate the water-soluble resin, and then the semiconductor substrate may be spin-dried using a spin-dryer dedicated to drying. .
【００５２】[0052]
【発明の効果】以上説明したように本発明によれば、水
溶性樹脂が基板周縁部に残留することなく除去すること
ができ、また僅かに残ったとしても基板表面に流れ出す
のを防止できるので、不具合の発生を大幅に減少するこ
とができる。As described above, according to the present invention, the water-soluble resin can be removed without remaining on the peripheral portion of the substrate, and even if it remains slightly, it can be prevented from flowing out to the substrate surface. Therefore, the occurrence of defects can be greatly reduced.
【図１】本発明の半導体基板の製造方法の一実施例を示
す工程図である。FIG. 1 is a process chart showing one embodiment of a method for manufacturing a semiconductor substrate of the present invention.
【図２】本発明の半導体基板の製造方法の一実施例を示
す工程図である。FIG. 2 is a process chart showing one embodiment of a method of manufacturing a semiconductor substrate according to the present invention.
【図３】本発明の半導体基板の製造装置の一実施例を示
すブロック図である。FIG. 3 is a block diagram showing one embodiment of a semiconductor substrate manufacturing apparatus according to the present invention.
【図４】従来の半導体基板の製造方法を示す工程図であ
る。FIG. 4 is a process chart showing a conventional method for manufacturing a semiconductor substrate.
２０ 半導体基板 ２１ 熱酸化膜 ２２ フォトレジスト ２３ 水溶性樹脂 ２４ レジスト ５０ 水溶性樹脂塗布用スピンナ ５０ａ，５３ａ，５４ａ，５７ａ チャック ５０ｂ，５３ｂ，５４ｂ，５７ｂ ノズル ５０ｃ，５４ｃ バックリンスノズル ５１，５５ 加熱炉 ５２，５６ 反転機構 ５３ 疎水処理剤塗布用スピンナ ５４ レジスト塗布用スピンナ ５７ 水溶性樹脂剥離用スピンナ Reference Signs List 20 semiconductor substrate 21 thermal oxide film 22 photoresist 23 water-soluble resin 24 resist 50 water-soluble resin coating spinner 50a, 53a, 54a, 57a chuck 50b, 53b, 54b, 57b nozzle 50c, 54c back rinse nozzle 51, 55 heating furnace 52, 56 Inverting mechanism 53 Spinner for applying hydrophobic treatment agent 54 Spinner for applying resist 57 Spinner for removing water-soluble resin
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.6，ＤＢ名) H01L 21/027 H01L 21/205 B05C 11/08──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl.6 , DB name) H01L 21/027 H01L 21/205 B05C 11/08
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19908493AJP2764682B2 (en) | 1993-07-17 | 1993-07-17 | Semiconductor substrate manufacturing method and apparatus |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19908493AJP2764682B2 (en) | 1993-07-17 | 1993-07-17 | Semiconductor substrate manufacturing method and apparatus |
| Publication Number | Publication Date |
|---|---|
| JPH0737796A JPH0737796A (en) | 1995-02-07 |
| JP2764682B2true JP2764682B2 (en) | 1998-06-11 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19908493AExpired - LifetimeJP2764682B2 (en) | 1993-07-17 | 1993-07-17 | Semiconductor substrate manufacturing method and apparatus |
| Country | Link |
|---|---|
| JP (1) | JP2764682B2 (en) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09232206A (en)* | 1996-02-22 | 1997-09-05 | Hitachi Ltd | Coating device |
| KR100272521B1 (en)* | 1997-12-11 | 2000-12-01 | 김영환 | Photoresist Coating Method of Semiconductor Device |
| JP4947393B2 (en)* | 2007-07-24 | 2012-06-06 | 信越半導体株式会社 | Manufacturing method of semiconductor substrate |
| JP5303651B2 (en) | 2009-09-11 | 2013-10-02 | 東芝キヤリア株式会社 | Multi-cylinder rotary compressor and refrigeration cycle equipment |
| Publication number | Publication date |
|---|---|
| JPH0737796A (en) | 1995-02-07 |
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