JP2011222707A - Power semiconductor device - Google Patents
Power semiconductor deviceDownload PDFInfo
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- JP2011222707A JP2011222707AJP2010089585AJP2010089585AJP2011222707AJP 2011222707 AJP2011222707 AJP 2011222707AJP 2010089585 AJP2010089585 AJP 2010089585AJP 2010089585 AJP2010089585 AJP 2010089585AJP 2011222707 AJP2011222707 AJP 2011222707A
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Abstract
Translated fromJapaneseDescription
Translated fromJapanese本発明は、絶縁基板上に電力用半導体素子が実装された電力用半導体装置に関し、特にワイヤ接合部の寿命を向上させることができる電力用半導体装置に関する。 The present invention relates to a power semiconductor device in which a power semiconductor element is mounted on an insulating substrate, and more particularly to a power semiconductor device capable of improving the life of a wire junction.
近年、絶縁基板上に電力用半導体素子が実装された電力用半導体装置が用いられている。電力用半導体素子の上面の主電極は、金属ワイヤにより絶縁基板上の電極パターンに接続される。電極パターンは装置外部に接続され、電極パターン及び金属ワイヤに通電される。電力用半導体素子の動作時に発生した熱は、素子下面から放熱される（例えば、特許文献１参照）。スイッチングを切り替えることで、電力用半導体素子は発熱と放熱を繰り返し、ワイヤ接合部の温度も同様に変化する。 In recent years, a power semiconductor device in which a power semiconductor element is mounted on an insulating substrate has been used. The main electrode on the upper surface of the power semiconductor element is connected to the electrode pattern on the insulating substrate by a metal wire. The electrode pattern is connected to the outside of the apparatus, and the electrode pattern and the metal wire are energized. Heat generated during operation of the power semiconductor element is dissipated from the lower surface of the element (see, for example, Patent Document 1). By switching the switching, the power semiconductor element repeatedly generates heat and dissipates heat, and the temperature of the wire joint changes similarly.
従来の電力用半導体装置では、素子上面からの放熱は少ないので、素子上面の温度が高くなる。従って、金属ワイヤと素子との熱膨張係数の差によりワイヤ接合部に熱ストレスが生じ、スイッチングによる熱サイクルの繰り返しによりクラックが発生し、ワイヤ接合部の寿命が低下するという問題があった。また、金属ワイヤに通電される際に、金属ワイヤの抵抗発熱により素子表面が更に加熱される。 In the conventional power semiconductor device, since the heat radiation from the element upper surface is small, the temperature of the element upper surface becomes high. Accordingly, there is a problem that thermal stress is generated in the wire joint due to the difference in thermal expansion coefficient between the metal wire and the element, cracks are generated due to repeated thermal cycles by switching, and the life of the wire joint is reduced. Further, when the metal wire is energized, the element surface is further heated by the resistance heating of the metal wire.
本発明は、上述のような課題を解決するためになされたもので、その目的は、ワイヤ接合部の寿命を向上させることができる電力用半導体装置を得るものである。 The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a power semiconductor device capable of improving the life of a wire bonding portion.
本発明は、絶縁基板と、前記絶縁基板上に実装され、上面に主電極を有する電力用半導体素子と、前記絶縁基板上に設けられた電極パターンと、前記主電極を前記電極パターンに電気的に接続する電気的接続部材と、前記絶縁基板上に設けられた放熱用パターンと、前記主電極を前記放熱用パターンに熱的に接続する熱的接続部材とを備え、前記電極パターンは装置外部に接続され、前記電極パターン及び前記電気的接続部材に通電され、前記放熱用パターンは装置外部に接続されず、前記放熱用パターン及び前記熱的接続部材には通電されないことを特徴とする電力用半導体装置である。 The present invention includes an insulating substrate, a power semiconductor element mounted on the insulating substrate and having a main electrode on the upper surface, an electrode pattern provided on the insulating substrate, and the main electrode electrically connected to the electrode pattern. An electrical connection member connected to the insulating substrate, a heat radiation pattern provided on the insulating substrate, and a thermal connection member thermally connecting the main electrode to the heat radiation pattern, the electrode pattern being external to the apparatus The electrode pattern and the electrical connection member are energized, the heat dissipation pattern is not connected to the outside of the apparatus, and the heat dissipation pattern and the thermal connection member are not energized. It is a semiconductor device.
本発明により、ワイヤ接合部の寿命を向上させることができる。 According to the present invention, the life of the wire joint can be improved.
本発明の実施の形態に係る電力用半導体装置について図面を参照して説明する。同じ構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。 A power semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The same components are denoted by the same reference numerals, and repeated description may be omitted.
実施の形態１．
図１は実施の形態１に係る電力用半導体装置を示す平面図である。図２は図１のＡ−Ａ´に沿った断面図である。図３は図１のＢ−Ｂ´に沿った断面図である。
FIG. 1 is a plan view showing a power semiconductor device according to the first embodiment. FIG. 2 is a cross-sectional view taken along the line AA ′ of FIG. FIG. 3 is a sectional view taken along the line BB ′ of FIG.
放熱板１上に絶縁基板２が設けられている。絶縁基板２の下面に下面電極パターン３が設けられ、この下面電極パターン３は半田４により放熱板１に接合されている。放熱板１はＣｕなどの熱伝導性の高い材質からなり、絶縁基板２はセラミックなどの絶縁体からなる。半田４は放熱を助ける役割もする。 An
絶縁基板２上に、ゲート電極パターン５、コレクタ電極パターン６、エミッタ電極パターン７（電極パターン）、放熱用パターン８，９が設けられている。これらのパターンはＣｕなどの電気伝導性及び熱伝導性の高い材質からなる。 On the
絶縁基板２上にＩＧＢＴチップ１０（電力用半導体素子）が実装されている。ＩＧＢＴチップ１０は、上面にゲート電極１１及びエミッタ電極１２（主電極）を有し、下面にコレクタ電極１３を有する。コレクタ電極１３は半田１４によりコレクタ電極パターン６に接合されている。ゲート電極１１は金属ワイヤ１５によりゲート電極パターン５に電気的に接続されている。エミッタ電極１２は、金属ワイヤ１６（電気的接続部材）によりエミッタ電極パターン７に電気的に接続されている。なお、ワイヤボンディングには超音波接合などが用いられる。 An IGBT chip 10 (power semiconductor element) is mounted on the
絶縁基板２上にダイオードチップ１７（電力用半導体素子）が実装されている。ダイオードチップ１７の上面のアノード電極１８（主電極）は、金属ワイヤ１９（電気的接続部材）によりエミッタ電極１２に電気的に接続されている。ダイオードチップ１７の下面のカソード電極２０は、半田２１によりコレクタ電極パターン６に接合されている。 A diode chip 17 (power semiconductor element) is mounted on the
エミッタ電極１２は、金属ワイヤ２２（熱的接続部材）により放熱用パターン８に熱的に接続されている。ダイオードチップ１７のアノード電極１８は、金属ワイヤ２３（熱的接続部材）により放熱用パターン９に熱的に接続されている。実施の形態１では、金属ワイヤ１６と金属ワイヤ２２は一続きの金属ワイヤであり、金属ワイヤ１９と金属ワイヤ２３は一続きの金属ワイヤである。 The
エミッタ電極パターン７は装置外部に接続され、エミッタ電極パターン７及び金属ワイヤ１６，１９に通電される。一方、放熱用パターン８，９は装置外部に接続されず、放熱用パターン８，９及び金属ワイヤ２２，２３には通電されない。 The
実施の形態１の効果について比較例と比較しながら説明する。図４は比較例に係る電力用半導体装置を示す平面図であり、図５はその断面図である。比較例では、実施の形態１に比べて、放熱用パターン８，９及び金属ワイヤ２２，２３が存在しない。 The effects of the first embodiment will be described in comparison with a comparative example. 4 is a plan view showing a power semiconductor device according to a comparative example, and FIG. 5 is a sectional view thereof. In the comparative example, the
図６は、ワイヤ接合部の温度振幅とワイヤ接合部の破壊寿命サイクル数の関係図である。実施の形態１では、比較例に比べてワイヤ接合部温度振幅が小さいため、破壊寿命サイクル数が多くなる。これについて以下に説明する。 FIG. 6 is a relationship diagram between the temperature amplitude of the wire joint and the number of fracture life cycles of the wire joint. In
比較例では、ＩＧＢＴチップ１０及びダイオードチップ１７の動作時に発生した熱の多くは、素子下面から放熱される。一方、実施の形態１では、放熱用パターン８，９及び金属ワイヤ２２，２３には通電されず、これら自体が発熱することもない。従って、放熱用パターン８，９及び金属ワイヤ２２，２３により、素子下面からだけでなく、素子上面からも放熱される。よって、ワイヤ接合部の寿命を向上させることができる。 In the comparative example, most of the heat generated during the operation of the
なお、上記の金属ワイヤは、Ａｌ、Ｃｕ、又はＡｕなどの電気伝導性及び熱伝導性の高い金属からなる。また、ＩＧＢＴチップ１０の代わりに、パワーＭＯＳＦＥＴチップなどの他の電力用半導体素子を用いてもよい。 In addition, said metal wire consists of a metal with high electrical conductivity and heat conductivity, such as Al, Cu, or Au. Further, instead of the
実施の形態２．
図７は実施の形態２に係る電力用半導体装置を示す平面図であり、図８はその断面図である。実施の形態１では金属ワイヤ１６と金属ワイヤ２２は一続きの金属ワイヤであったが、実施の形態２ではそれぞれ別の金属ワイヤである。同様に金属ワイヤ１９と金属ワイヤ２３もそれぞれ別の金属ワイヤである。この場合でも実施の形態１と同様の効果を得ることができる。なお、金属ワイヤ２２，２３は、断面が短形状のリボンでもよい。
FIG. 7 is a plan view showing a power semiconductor device according to the second embodiment, and FIG. 8 is a sectional view thereof. In the first embodiment, the
実施の形態３．
図９は実施の形態３に係る電力用半導体装置を示す平面図であり、図１０はその断面図である。実施の形態３では、実施の形態１，２の金属ワイヤ２２，２３の代わりに、放熱用リード端子２４，２５（熱的接続部材）を用いる。放熱用リード端子２４，２５は、Ａｌ、Ｃｕ、又はＡｕなどの熱伝導性の良い材質からなる。放熱用リード端子２４の一端がエミッタ電極１２に半田２６により接続され、放熱用リード端子２４の他端が放熱用パターン８に半田２７により接続されている。放熱用リード端子２５も同様である。これにより実施の形態１，２よりも放熱性が高くなる。
FIG. 9 is a plan view showing a power semiconductor device according to the third embodiment, and FIG. 10 is a sectional view thereof. In the third embodiment, instead of the
実施の形態４．
図１１は実施の形態４に係る電力用半導体装置を示す平面図であり、図１２はその断面図である。実施の形態４では、放熱用リード端子２４がエミッタ電極１２の全面に接続されている。そして、金属ワイヤ１６の一端が放熱用リード端子２４に接合され、金属ワイヤ１６の他端がエミッタ電極パターン７に接合されている。放熱用リード端子２５及び金属ワイヤ１９も同様である。その他の構成は実施の形態３と同様である。これにより、実施の形態３と同様の効果を得ることができる。
FIG. 11 is a plan view showing a power semiconductor device according to the fourth embodiment, and FIG. 12 is a sectional view thereof. In the fourth embodiment, the heat
２ 絶縁基板
７ エミッタ電極パターン（電極パターン）
８，９ 放熱用パターン
１０ ＩＧＢＴチップ（電力用半導体素子）
１２ エミッタ電極（主電極）
１６，１９ 金属ワイヤ（電気的接続部材）
１７ ダイオードチップ（電力用半導体素子）
１８ アノード電極（主電極）
２２，２３ 金属ワイヤ（熱的接続部材）
２４，２５ 放熱用リード端子（熱的接続部材）
２６ 半田2 Insulating
8,9
12 Emitter electrode (main electrode)
16, 19 Metal wire (electrical connection member)
17 Diode chip (Power semiconductor device)
18 Anode electrode (main electrode)
22, 23 Metal wire (thermal connection member)
24, 25 Lead terminal for heat dissipation (thermal connection member)
26 Solder
Claims (5)
Translated fromJapanese前記絶縁基板上に実装され、上面に主電極を有する電力用半導体素子と、
前記絶縁基板上に設けられた電極パターン及び放熱用パターンと、
前記主電極を前記電極パターンに電気的に接続する電気的接続部材と、
前記主電極を前記放熱用パターンに熱的に接続する熱的接続部材とを備え、
前記電極パターンは装置外部に接続され、
前記電極パターン及び前記電気的接続部材に通電され、
前記放熱用パターンは装置外部に接続されず、
前記放熱用パターン及び前記熱的接続部材には通電されないことを特徴とする電力用半導体装置。An insulating substrate;
A power semiconductor element mounted on the insulating substrate and having a main electrode on an upper surface;
An electrode pattern and a heat dissipation pattern provided on the insulating substrate;
An electrical connection member for electrically connecting the main electrode to the electrode pattern;
A thermal connection member that thermally connects the main electrode to the heat dissipation pattern;
The electrode pattern is connected to the outside of the device,
The electrode pattern and the electrical connection member are energized,
The heat dissipation pattern is not connected to the outside of the device,
The power semiconductor device is characterized in that the heat radiation pattern and the thermal connection member are not energized.
前記放熱用リード端子の一端が前記主電極に半田により接続され、
前記放熱用リード端子の他端が前記放熱用パターンに半田により接続されていることを特徴とする請求項１に記載の電力用半導体装置。The thermal connection member is a heat dissipation lead terminal,
One end of the heat dissipation lead terminal is connected to the main electrode by solder,
The power semiconductor device according to claim 1, wherein the other end of the heat dissipation lead terminal is connected to the heat dissipation pattern by solder.
前記金属ワイヤの一端は前記放熱用リード端子に接合され、
前記金属ワイヤの他端は前記電極パターンに接合されていることを特徴とする請求項４に記載の電力用半導体装置。The electrical connection member is a metal wire;
One end of the metal wire is joined to the heat dissipation lead terminal,
The power semiconductor device according to claim 4, wherein the other end of the metal wire is bonded to the electrode pattern.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014091608A1 (en)* | 2012-12-13 | 2014-06-19 | 株式会社 日立製作所 | Power semiconductor module and power conversion apparatus using same |
| WO2023140050A1 (en)* | 2022-01-20 | 2023-07-27 | ローム株式会社 | Semiconductor device |
- 2010
- 2010-04-08JPJP2010089585Apatent/JP2011222707A/enactivePending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014091608A1 (en)* | 2012-12-13 | 2014-06-19 | 株式会社 日立製作所 | Power semiconductor module and power conversion apparatus using same |
| JPWO2014091608A1 (en)* | 2012-12-13 | 2017-01-05 | 株式会社日立製作所 | Power semiconductor module and power converter using the same |
| WO2023140050A1 (en)* | 2022-01-20 | 2023-07-27 | ローム株式会社 | Semiconductor device |
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