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JP2009267164A - Light emitting device and method of manufacturing the light emitting device - Google Patents

Light emitting device and method of manufacturing the light emitting deviceDownload PDF

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JP2009267164A
JP2009267164AJP2008116215AJP2008116215AJP2009267164AJP 2009267164 AJP2009267164 AJP 2009267164AJP 2008116215 AJP2008116215 AJP 2008116215AJP 2008116215 AJP2008116215 AJP 2008116215AJP 2009267164 AJP2009267164 AJP 2009267164A
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Katsunobu Kitada
勝信 北田
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Kyocera Corp
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Abstract

Translated fromJapanese

【課題】 小型化が可能で、ディスプレイとして使用する場合には、解像度を高くすることが可能な発光デバイスおよび発光デバイスの製造方法を提供する。
【解決手段】 基板２上には、一導電型半導体層３ａと、一導電型半導体層３ａに積層される逆導電型半導体層３ｂを含み、離間して設けられる複数の発光素子３が設けられる。これらの発光素子３を覆うように複数の蛍光体が設けられ、この蛍光体は、発光素子３から放射される光によって励起され、異なる波長の蛍光を発光する複数の蛍光物質をそれぞれ含む。共通カソード電極４は、同じ蛍光体に覆われた発光素子３に含まれる一導電型半導体層３ａと電気的に接続され、共通アノード電極５は、異なる蛍光体に覆われた発光素子３に含まれる逆導電型半導体層３ｂと電気的に並列接続される。
【選択図】 図１PROBLEM TO BE SOLVED: To provide a light emitting device and a method for manufacturing the light emitting device that can be miniaturized and can have high resolution when used as a display.
A plurality of light-emitting elements 3 are provided on a substrate 2 including a one-conductivity-type semiconductor layer 3a and a reverse-conductivity-type semiconductor layer 3b stacked on the one-conductivity-type semiconductor layer 3a. . A plurality of phosphors are provided so as to cover these light emitting elements 3, and the phosphors are excited by light emitted from the light emitting elements 3 and respectively include a plurality of phosphors that emit fluorescence having different wavelengths. The common cathode electrode 4 is electrically connected to the one-conductivity-type semiconductor layer 3a included in the light emitting element 3 covered with the same phosphor, and the common anode electrode 5 is included in the light emitting element 3 covered with a different phosphor. And electrically connected in parallel with the reverse conductivity type semiconductor layer 3b.
[Selection] Figure 1

Description

Translated fromJapanese

本発明は、照明、露光などに用いられる発光デバイス、および発光デバイスの製造方法に関する。  The present invention relates to a light emitting device used for illumination, exposure, and the like, and a method for manufacturing the light emitting device.

ＬＥＤ（Light Emitting Diode）素子等の、半導体層が積層されてなる発光デバイスは、発光電力効率に優れるため、信号表示用のほか、高輝度の照明装置としても用いられている。特に、冷陰極管などの他の光学機器と比べて小型化、薄型化が可能であるため、例えば液晶ディスプレイのバックライトや、画像形成装置の静電潜像書き込み露光、画像表示デバイスなどに好適に用いられる。  A light emitting device in which semiconductor layers such as an LED (Light Emitting Diode) element are stacked has excellent light emission power efficiency, and is used not only for signal display but also as a high-luminance lighting device. In particular, since it can be made smaller and thinner than other optical devices such as cold cathode fluorescent lamps, it is suitable for, for example, backlights of liquid crystal displays, electrostatic latent image writing exposure of image forming apparatuses, and image display devices. Used for.

従来のＬＥＤ発光デバイスは、気相成長法などによって、基板表面に一導電体層と逆導電体層とが順次積層された１つの発光部を備えるＬＥＤチップを、必要に応じて複数個配列させ、面状の発光を可能としている。  A conventional LED light-emitting device has a plurality of LED chips arranged as necessary, each having a single light-emitting portion in which one conductor layer and a reverse conductor layer are sequentially stacked on the surface of the substrate by vapor phase epitaxy or the like. , Planar light emission is possible.

さらに、それぞれのＬＥＤチップの外周を異なる種類の蛍光物質を含む蛍光体で覆い、蛍光物質がＬＥＤから放射される光を吸収して、それぞれ異なる波長の光を放出させる蛍光発光装置なども開発されている（特許文献１，２参照）。  Furthermore, fluorescent light emitting devices that cover the outer periphery of each LED chip with phosphors containing different types of fluorescent materials, and that the fluorescent materials absorb light emitted from the LEDs and emit light of different wavelengths have been developed. (SeePatent Documents 1 and 2).

上述のような蛍光発光装置では、蛍光体に含まれる蛍光物質の種類を変えることで、放出される光の波長を変えることができるので、１つのＬＥＤで異なる色の光を発光することができる。これにより、複数色の光源やディスプレイとしても容易に使用することが可能となる。  In the fluorescent light emitting device as described above, the wavelength of emitted light can be changed by changing the type of fluorescent material contained in the phosphor, so that one LED can emit light of different colors. . Thereby, it can be easily used as a light source or a display of a plurality of colors.

特開２００２−９１３５３号公報JP 2002-91353 A特開２００５−１３６００６号公報JP 2005-136006 A

上述のような蛍光発光装置では、各基板に一導電体層と逆導電体層とが順次積層された１つの発光部を備えるＬＥＤチップを配列している。そのため、発光領域の間隔がＬＥＤチップの配置間隔以上には狭くできない。従って、発光装置の小型化が難しく、ディスプレイ等の表示装置として使用するには、解像度を高くすることが困難である。  In the fluorescent light emitting device as described above, LED chips each having one light emitting portion in which one conductor layer and a reverse conductor layer are sequentially laminated on each substrate are arranged. Therefore, the interval between the light emitting regions cannot be narrower than the arrangement interval of the LED chips. Therefore, it is difficult to reduce the size of the light emitting device, and it is difficult to increase the resolution for use as a display device such as a display.

本発明の目的は、小型化が可能で、ディスプレイとして使用する場合に、解像度を高くすることが可能な発光デバイスおよび発光デバイスの製造方法を提供することである。  An object of the present invention is to provide a light emitting device and a method for manufacturing the light emitting device that can be miniaturized and can have high resolution when used as a display.

本発明は、半導体基板と、
該半導体基板上に形成される一導電型半導体層と、該一導電型半導体層に積層される逆導電型半導体層との接合部分をそれぞれが含み、前記接合部分が離間して設けられる複数の発光部と、
前記複数の発光部をそれぞれ覆い、前記発光部から放射される光によって励起してそれぞれ異なる波長の蛍光を発光する複数種類の蛍光体と、
前記半導体基板上に設けられ、少なくとも異なる種類の蛍光体に覆われた発光部に含まれる前記逆導電型半導体層と電気的に接続される第１共通電極と、
前記半導体基板上に設けられ、同じ種類の蛍光体に覆われた発光部に含まれる前記一導電型半導体層と電気的に並列接続される第２共通電極とを含むことを特徴とする発光デバイスである。The present invention includes a semiconductor substrate,
Each includes a junction part of one conductivity type semiconductor layer formed on the semiconductor substrate and a reverse conductivity type semiconductor layer stacked on the one conductivity type semiconductor layer, and the junction parts are provided in a plurality of spaced positions. A light emitting unit;
A plurality of types of phosphors that respectively cover the plurality of light emitting units and are excited by light emitted from the light emitting units to emit fluorescence of different wavelengths;
A first common electrode provided on the semiconductor substrate and electrically connected to the reverse conductivity type semiconductor layer included in a light emitting unit covered with at least different types of phosphors;
A light-emitting device comprising: a second common electrode electrically connected in parallel to the one-conductivity-type semiconductor layer provided on the semiconductor substrate and covered with a phosphor of the same type and included in a light-emitting portion It is.

また本発明は、半導体基板を準備する工程と、
前記半導体基板上に、一導電型半導体層と、該一導電型半導体層に積層される逆導電型半導体層との接合部分をそれぞれが含み、前記接合部分が離間して設けられる複数の発光部を形成する工程と、
前記半導体基板上に、前記逆導電型半導体層と電気的に接続される第１共通電極と、前記一導電型半導体層と電気的に並列接続される第２共通電極とを形成する工程と、
前記発光部から放射される光によって励起してそれぞれ異なる波長の蛍光を発光する複数種類の蛍光体で前記複数の発光部をそれぞれ覆う工程であって、前記第１共通電極で接続された発光部を、少なくとも異なる種類の蛍光体で覆い、前記第２共通電極で接続された発光部を、同じ種類の蛍光体で覆う工程と、を含むことを特徴とする発光デバイスの製造方法である。The present invention also includes a step of preparing a semiconductor substrate;
A plurality of light emitting portions each including a junction portion of one conductivity type semiconductor layer and a reverse conductivity type semiconductor layer stacked on the one conductivity type semiconductor layer on the semiconductor substrate, the junction portions being provided apart from each other Forming a step;
Forming a first common electrode electrically connected to the reverse conductivity type semiconductor layer and a second common electrode electrically connected in parallel to the one conductivity type semiconductor layer on the semiconductor substrate;
A step of covering each of the plurality of light emitting units with a plurality of types of phosphors that are excited by light emitted from the light emitting unit to emit fluorescence of different wavelengths, and connected by the first common electrode Covering the light emitting portion connected with the second common electrode with at least the same type of phosphor, and a method for manufacturing a light emitting device.

本発明によれば、半導体基板上に複数の発光部を形成し、当該複数の発光部をそれぞれ覆う複数種類の蛍光体を設けることで、発光部同士の間隔を小さくすることができ、複数色の発光が可能な発光デバイスを小型化することが可能となる。特に、発光デバイスを、ディスプレイとして用いる場合は、発光デバイスの小型化に加え、表示する画像の解像度を高くすることができる。  According to the present invention, by forming a plurality of light emitting units on a semiconductor substrate and providing a plurality of types of phosphors that respectively cover the plurality of light emitting units, the interval between the light emitting units can be reduced, and a plurality of colors It is possible to reduce the size of a light emitting device that can emit light. In particular, when the light-emitting device is used as a display, the resolution of an image to be displayed can be increased in addition to downsizing of the light-emitting device.

また本発明によれば、半導体基板上に、一導電型半導体層と逆導電型半導体層との接合部分が離間して設けられる複数の発光部を形成し、前記逆導電型半導体層と電気的に接続される第１共通電極と、前記一導電型半導体層と電気的に並列接続される第２共通電極とを形成する。  Further, according to the present invention, a plurality of light emitting portions are formed on a semiconductor substrate so that the joint portions of the one-conductivity-type semiconductor layer and the reverse-conductivity-type semiconductor layer are separated from each other. And a second common electrode electrically connected in parallel with the one conductivity type semiconductor layer.

次に、前記発光部から放射される光によって励起してそれぞれ異なる波長の蛍光を発光する複数種類の蛍光体で前記複数の発光部をそれぞれ覆うが、このとき、前記第１共通電極で接続された発光部を、少なくとも異なる種類の蛍光体で覆い、前記第２共通電極で接続された発光部を、同じ種類の蛍光体で覆う。  Next, each of the plurality of light emitting units is covered with a plurality of types of phosphors that are excited by light emitted from the light emitting unit to emit fluorescence of different wavelengths, and are connected by the first common electrode. The light emitting part covered with at least different types of phosphors, and the light emitting parts connected by the second common electrode are covered with the same type of phosphors.

これにより、発光部同士の間隔が小さく、複数色の発光が可能な小型の発光デバイスを製造することができる。  Thereby, a small light emitting device capable of emitting light of a plurality of colors with a small interval between the light emitting portions can be manufactured.

図１は、本発明の実施の一形態である発光デバイス１の構成を示す平面図である。図２は、図１の切断面線Ａ−Ａから見た断面図である。図３は、図１の切断面線Ｂ−Ｂから見た断面図である。  FIG. 1 is a plan view showing a configuration of alight emitting device 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the section line AA of FIG. FIG. 3 is a cross-sectional view taken along the section line BB in FIG.

発光デバイス１は、基板２上に複数の発光素子３が設けられ、発光素子３は、基板表面に平行なｘ方向と、基板表面に平行でｘ方向に直交するｙ方向とにそれぞれ直線上に、所定の間隔でマトリクス状に配置されている。  Thelight emitting device 1 includes a plurality oflight emitting elements 3 provided on asubstrate 2, and thelight emitting elements 3 are linearly arranged in an x direction parallel to the substrate surface and a y direction parallel to the substrate surface and perpendicular to the x direction. Are arranged in a matrix at predetermined intervals.

複数の発光素子３は、ｘ方向に沿って配列する発光素子３を接続する共通カソード電極４およびｙ方向に沿って配列する発光素子３を接続する共通アノード電極５によって、給電され、発光するように構成される。共通カソード電極４、および共通アノード電極５は個別に通電可能に構成されており、たとえば、１本の共通カソード電極４と１本の共通アノード電極５を選択して通電すれば、複数の発光素子３のうち、特定の１つの発光素子３を選択して発光させることができる。  The plurality oflight emitting elements 3 are supplied with power by thecommon cathode electrode 4 connecting thelight emitting elements 3 arranged along the x direction and thecommon anode electrode 5 connecting thelight emitting elements 3 arranged along the y direction so as to emit light. Configured. Thecommon cathode electrode 4 and thecommon anode electrode 5 are configured to be individually energized. For example, if onecommon cathode electrode 4 and onecommon anode electrode 5 are selected and energized, a plurality of light emitting elements are provided. 3, one specificlight emitting element 3 can be selected to emit light.

発光素子３は、エピタキシャル成長により導電型の半導体層が積層されてなる半導体光学素子である。たとえば、発光素子３は、一導電型半導体層３ａと、一導電型半導体層３ａに積層される逆導電型半導体層３ｂとの接合部分３ｃを含み、接合部分３ｃで発光する発光部を備えるＬＥＤ発光素子である。  Thelight emitting element 3 is a semiconductor optical element in which conductive semiconductor layers are stacked by epitaxial growth. For example, the light-emittingelement 3 includes a junction portion 3c between a one-conductivity-type semiconductor layer 3a and a reverse-conductivity-type semiconductor layer 3b stacked on the one-conductivity-type semiconductor layer 3a, and an LED including a light-emitting portion that emits light at the junction portion 3c. It is a light emitting element.

ＬＥＤ発光素子３は、たとえば波長が３６５ｎｍ〜４１０ｎｍの紫外線を放射し、放射された紫外線が後述する蛍光物質を励起させて、各波長（各色）の蛍光を放出させる。  The LEDlight emitting element 3 emits ultraviolet light having a wavelength of 365 nm to 410 nm, for example, and the emitted ultraviolet light excites a fluorescent material described later to emit fluorescence of each wavelength (each color).

一導電型半導体層３ａは、たとえば一導電型の不純物がドーピングされたＧａＮ、ＩｎＧａＮ、ＡｌＧａＮなどによって形成される。逆導電型半導体層３ｂは、一導電型半導体層３ａの厚み方向の一方に積層される。逆導電型半導体層３ｂは、たとえば逆導電型の不純物がドーピングされた逆導電型のＧａＮ、ＩｎＧａＮ、ＡｌＧａＮなどによって形成される。  The one conductivity type semiconductor layer 3a is formed of, for example, GaN, InGaN, AlGaN or the like doped with one conductivity type impurity. The reverse conductivitytype semiconductor layer 3b is stacked on one side in the thickness direction of the one conductivity type semiconductor layer 3a. The reverse conductivitytype semiconductor layer 3b is formed of, for example, reverse conductivity type GaN, InGaN, AlGaN or the like doped with reverse conductivity type impurities.

基板２は、上記のような紫外線発光が可能な発光素子３を結晶成長させる基板であればよく、ＧａＮ、ＡｌＮ、サファイアなどが用いられる。  Thesubstrate 2 may be a substrate on which thelight emitting element 3 capable of emitting ultraviolet light as described above is crystal-grown, and GaN, AlN, sapphire, or the like is used.

一導電型半導体層３ａは、基板２上において逆導電型半導体層３ｂよりも広く設けられ、一導電型半導体層３ａの上面の一部は、逆導電型半導体層３ｂと接合することなく露出する。この露出面をコンタクト面として共通カソード電極４と電気的に接続される。逆導電型半導体層３ｂの上面は、コンタクト面として共通アノード電極５と電気的に接続される。  The one conductivity type semiconductor layer 3a is provided wider than the opposite conductivitytype semiconductor layer 3b on thesubstrate 2, and a part of the upper surface of the one conductivity type semiconductor layer 3a is exposed without being joined to the opposite conductivitytype semiconductor layer 3b. . The exposed surface is electrically connected to thecommon cathode electrode 4 as a contact surface. The upper surface of the reverse conductivitytype semiconductor layer 3b is electrically connected to thecommon anode electrode 5 as a contact surface.

複数の発光素子３は、基板２の一主面２ａ上に設けられ、さらに青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８が、これら複数の発光素子３を覆うように設けられる。  The plurality oflight emitting elements 3 are provided on onemain surface 2a of thesubstrate 2, and the bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8 cover the plurality oflight emitting elements 3. It is provided as follows.

青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８は、蛍光発光によってそれぞれ青色発光させたい発光素子３、赤色発光させたい発光素子３、緑色発光させたい発光素子３上に適宜配置すればよい。  The blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light-emittingphosphor 8 are respectively provided on the light-emittingelement 3 that is desired to emit blue light, the light-emittingelement 3 that is desired to emit red light, and the light-emittingelement 3 that is desired to emit green light. May be arranged appropriately.

たとえば、本実施形態では、ｘ方向に沿って並ぶ１列の発光素子３を覆うように青色発光用蛍光体６を設け、この列にｙ方向に隣接してｘ方向に沿って並ぶ１列の発光素子３を覆うように赤色発光用蛍光体７を設け、この列にｙ方向に隣接してｘ方向に沿って並ぶ１列の発光素子３を覆うように緑色発光用蛍光体８を設ける。図では３列のみが記載されているが、４列以上であってもよい。青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の配置順序は、３列ごとに上記の順序、すなわち青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の順序を繰り返して配置してもよいし、配置順序を適宜入れ替えてもよい。  For example, in the present embodiment, bluelight emitting phosphors 6 are provided so as to cover one row oflight emitting elements 3 arranged along the x direction, and this row is adjacent to the y direction and arranged along the x direction. A red light-emittingphosphor 7 is provided so as to cover the light-emittingelements 3, and a green light-emittingphosphor 8 is provided so as to cover one row of the light-emittingelements 3 arranged in the row along the x direction adjacent to the row. Although only three columns are shown in the figure, four or more columns may be used. The arrangement order of the blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light-emittingphosphor 8 is the above-described order every three rows, that is, the blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light emission. The order of thephosphors 8 for use may be arranged repeatedly, and the arrangement order may be appropriately changed.

青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８を含む全ての蛍光体は、発光素子３が形成された基板２の一主面２ａに対して垂直に延びる４つの壁で構成される枠体９によって四方を取り囲まれる。さらに、１つの発光用蛍光体と、隣接する他の色用の蛍光体との間には、発光素子３が形成された基板２の一主面２ａに対して垂直に延びる隔壁１０によって分け隔てられており、基板２と、枠体９および隔壁１０とで囲まれた凹所を埋めるように青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８がそれぞれ形成される。  All of the phosphors including the blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light-emittingphosphor 8 are four extending perpendicularly to themain surface 2a of thesubstrate 2 on which the light-emittingelement 3 is formed. It is surrounded on all sides by a frame 9 composed of walls. Further, the light emitting phosphor and the adjacent phosphors for other colors are separated by apartition wall 10 extending perpendicularly to the onemain surface 2a of thesubstrate 2 on which thelight emitting element 3 is formed. The bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8 are formed so as to fill a recess surrounded by thesubstrate 2, the frame body 9 and thepartition wall 10. .

青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８は、それぞれ青色発光用蛍光物質、赤色発光用蛍光物質、緑色発光用蛍光物質をベースとなる樹脂に分散させることで得られる。  The blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light-emittingphosphor 8 are respectively dispersed by dispersing a blue light-emitting fluorescent material, a red light-emitting fluorescent material, and a green light-emitting fluorescent material in a base resin. can get.

青色発光用蛍光物質、赤色発光用蛍光物質、緑色発光用蛍光物質は、発光素子３から放射される光によって励起され、青色の蛍光、赤色の蛍光、緑色の蛍光を発光する蛍光物質であればどのような物質であっても構わない。  The fluorescent material for blue light emission, the fluorescent material for red light emission, and the fluorescent material for green light emission are fluorescent materials that are excited by light emitted from thelight emitting element 3 and emit blue fluorescent light, red fluorescent light, and green fluorescent light. Any substance can be used.

上記のように発光素子３が紫外線発光のＬＥＤである場合、青色発光用蛍光物質、赤色発光用蛍光物質、緑色発光用蛍光物質は、発光素子３から放射される紫外線によって励起され、青色の蛍光、赤色の蛍光、緑色の蛍光を発光する蛍光物質を用いればよい。  As described above, when thelight emitting element 3 is an ultraviolet light emitting LED, the blue light emitting fluorescent material, the red light emitting fluorescent material, and the green light emitting fluorescent material are excited by the ultraviolet light emitted from thelight emitting element 3 to emit blue fluorescent light. A fluorescent material that emits red fluorescence or green fluorescence may be used.

青色発光用蛍光物質としては、ＢａＭｇＡｌ１０Ｏ１７：Ｅｕ、（ＳｒＣａＢａＭｇ）１０（ＰＯ４）６Ｃｌ２：Ｅｕなどを用いることができ、赤色発光用蛍光物質としては、Ｙ２Ｏ２Ｓ：Ｅｕ、Ｙ２Ｏ３：Ｅｕなどを用いることができ、緑色発光用蛍光物質としては、ＺｎＳ：Ｃｕ，Ａｌ、Ｚｎ２ＳｉＯ４：Ｍｎなどを用いることができる。As the fluorescent material for blue light emission, BaMgAl10 O17 : Eu, (SrCaBaMg)10 (PO 4)6 Cl2 : Eu can be used, and as the fluorescent material for red light emission, Y2 O2 S: Eu, Y2 O3 : Eu or the like can be used, and as the green fluorescent substance, ZnS: Cu, Al, Zn2 SiO4 : Mn, or the like can be used.

青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８のベースとなる樹脂は、これら青色発光用蛍光物質、赤色発光用蛍光物質、緑色発光用蛍光物質を分散可能な樹脂であり、紫外線、青色の蛍光、赤色の蛍光、緑色の蛍光を吸収しない樹脂であればどのような樹脂であってもよく、たとえばシリコーン樹脂が好適に用いられる。  The resin used as the base of thephosphor 6 for blue light emission, thephosphor 7 for red light emission, and thephosphor 8 for green light emission is a resin that can disperse these phosphor materials for blue light emission, red light emission, and green light emission. Any resin may be used as long as it does not absorb ultraviolet light, blue fluorescence, red fluorescence, and green fluorescence. For example, a silicone resin is preferably used.

通常、発光素子３の高さは、基板２の主面２ａから２μｍ〜１０μｍであり、青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の高さは、発光素子３の全体を覆うように、４μｍ〜１００μｍに形成される。  Usually, the height of thelight emitting element 3 is 2 μm to 10 μm from themain surface 2a of thesubstrate 2, and the heights of the bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8 are the light emitting elements. 3 to 4 μm to 100 μm.

枠体９および隔壁１０は、アクリル系樹脂、エポキシ系樹脂、ポリイミドなどの樹脂で構成され、青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８を形成する際に堰として機能する。  The frame body 9 and thepartition wall 10 are made of a resin such as an acrylic resin, an epoxy resin, or a polyimide. When the bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8 are formed, weirs are formed. Function as.

枠体９は、全ての発光素子３および青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８を囲み、厚みが５μｍ〜１５０μｍであり、基板２の主面２ａからの高さは、青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の高さよりも高く、
５μｍ〜１５０μｍである。The frame 9 surrounds all thelight emitting elements 3, the bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8, has a thickness of 5 μm to 150 μm, and extends from themain surface 2 a of thesubstrate 2. The height is higher than the height of the phosphor for bluelight emission 6, the phosphor forred light emission 7, and the phosphor forgreen light emission 8.
5 μm to 150 μm.

隔壁１０は、青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の間に設けられ、それぞれの蛍光体が混ざり合わないように、蛍光体間を仕切る仕切り板である。隔壁１０は、厚みが５μｍ〜１５０μｍであり、基板２の主面２ａからの高さは、各蛍光体の高さよりも１μｍ〜５０μｍだけ高く、５μｍ〜１５０μｍである。  Thepartition 10 is a partition plate that is provided between the blue light-emittingphosphor 6, the red light-emittingphosphor 7, and the green light-emittingphosphor 8, and partitions the phosphors so that the respective phosphors do not mix. . Thepartition wall 10 has a thickness of 5 μm to 150 μm, and the height from themain surface 2 a of thesubstrate 2 is 1 μm to 50 μm higher than the height of each phosphor, and is 5 μm to 150 μm.

さらに隔壁１０は、発光素子３から放射された光および蛍光物質を隣接する蛍光体へと進入することを防ぐように、紫外線に対して遮光性を有するもので構成されることが好ましい。  Furthermore, it is preferable that thepartition wall 10 is configured to have a light shielding property against ultraviolet rays so as to prevent the light emitted from thelight emitting element 3 and the fluorescent material from entering the adjacent phosphor.

共通カソード電極４および共通アノード電極５と、発光素子３への給電を制御するための駆動制御ＩＣとを接続するための接続パッド４ａおよび５ａは、枠体９よりも外側に設けられる。  Connection pads 4 a and 5 a for connecting thecommon cathode electrode 4 and thecommon anode electrode 5 to a drive control IC for controlling power feeding to thelight emitting element 3 are provided outside the frame body 9.

第１共通電極である共通カソード電極４は、同じ色を発光する蛍光体に覆われた発光素子３に含まれる一導電型半導体層３ａと電気的に接続され、第２共通電極である共通アノード電極５は、異なる色を発光する蛍光体に覆われた発光素子３に含まれる逆導電型半導体層３ｂと電気的に接続される。  Thecommon cathode electrode 4 that is the first common electrode is electrically connected to the one-conductivity-type semiconductor layer 3a included in the light-emittingelement 3 covered with the phosphor that emits the same color, and the common anode that is the second common electrode. Theelectrode 5 is electrically connected to the reverse conductivitytype semiconductor layer 3b included in thelight emitting element 3 covered with phosphors emitting different colors.

図４は、本発明の実施の他の形態である発光装置１１の構成を示す断面図である。発光装置１１は、回路基板１２上に発光デバイス１および発光素子３への給電を制御するための駆動制御ＩＣ１３とが実装され、駆動制御ＩＣ１３と共通カソード電極４の接続パッド４ａおよび共通アノード電極５の接続パッド５ａとは、ボンディングワイヤ１４によって電気的に接続されている。  FIG. 4 is a cross-sectional view showing a configuration of a light emitting device 11 according to another embodiment of the present invention. In the light emitting device 11, adrive control IC 13 for controlling power feeding to thelight emitting device 1 and thelight emitting element 3 is mounted on a circuit board 12, and theconnection pad 4 a and thecommon anode electrode 5 of thedrive control IC 13 and thecommon cathode electrode 4 are mounted. Theconnection pads 5 a are electrically connected by bondingwires 14.

駆動制御ＩＣ１３は、上述の共通カソード電極４および共通アノード電極５の接続状態に基づいて、共通カソード電極４および共通アノード電極５への給電を制御する。  Thedrive control IC 13 controls power supply to thecommon cathode electrode 4 and thecommon anode electrode 5 based on the connection state of thecommon cathode electrode 4 and thecommon anode electrode 5 described above.

発光装置１１は、回路基板１２を外囲し、発光デバイス１の上方に透明部材１５を保持するためのホルダー１６を備え、発光装置１１には、回路基板１２、ホルダー１６および透明部材１５で囲まれる内部空間が形成される。この内部空間は、真空状態であってもよいし、所定の気体によって充満されていてもよい。  The light emitting device 11 includes aholder 16 that surrounds the circuit board 12 and holds the transparent member 15 above thelight emitting device 1. The light emitting device 11 is surrounded by the circuit board 12, theholder 16, and the transparent member 15. An internal space is formed. This internal space may be in a vacuum state or may be filled with a predetermined gas.

ホルダー１６は、発光デバイス１の上方に窓部を備え、窓部にガラスなどで構成される透明部材１５が嵌め込まれる。  Theholder 16 includes a window part above thelight emitting device 1, and a transparent member 15 made of glass or the like is fitted into the window part.

駆動制御ＩＣ１３には、回路基板１２を介して発光デバイス１の各発光素子３を発光させるための制御信号が入力される。駆動制御ＩＣ１３は、駆動信号に基づいて、共通アノード電極５に電流を印加させて発光素子３を発光させる。  A control signal for causing eachlight emitting element 3 of thelight emitting device 1 to emit light via the circuit board 12 is input to thedrive control IC 13. Thedrive control IC 13 applies a current to thecommon anode electrode 5 based on the drive signal to cause thelight emitting element 3 to emit light.

発光装置１１は、各発光素子３をそれぞれ１つの画素として発光させることで、自発光ディスプレイとして用いることができる。青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８は、発光装置１１がカラーディスプレイとして機能するように配置すればよい。たとえば、ｘ方向の配列またはｙ方向の配列に沿って発光素子２ごとに異なる色の蛍光体を順次配置したり、その他カラーディスプレイとして表示する画像の種類などに合わせて青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８を適宜配置する。このとき、青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８の境界に隔壁１０を設ければよく、発光デバイス１を平面視したときの隔壁１０の形状は、本実施形態のように直線状に限らず、折れ線状や曲線状に形成されていてもよい。  The light emitting device 11 can be used as a self light emitting display by causing eachlight emitting element 3 to emit light as one pixel. The bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8 may be arranged so that the light emitting device 11 functions as a color display. For example, phosphors of different colors are sequentially arranged for each light emittingelement 2 along the arrangement in the x direction or the arrangement in the y direction, or the bluelight emitting phosphor 6 according to the type of image displayed as a color display, etc. A redlight emitting phosphor 7 and a greenlight emitting phosphor 8 are appropriately disposed. At this time, apartition wall 10 may be provided at the boundary between the bluelight emitting phosphor 6, the redlight emitting phosphor 7, and the greenlight emitting phosphor 8. The shape of thepartition 10 when thelight emitting device 1 is viewed in plan view is It is not limited to a linear shape as in the embodiment, and may be formed in a polygonal line shape or a curved shape.

以上のように、本発明は、基板２上に複数の発光素子３を形成し、これらをそれぞれ覆うような複数種類の蛍光体を設けることで、発光素子３同士の間隔を小さくすることができ、複数色の発光が可能な発光デバイスの小型化が可能となる。特に、発光デバイス１を、カラーディスプレイとして用いる場合は、発光デバイス１の小型化に加え、表示する画像の解像度を高くすることができる。  As described above, the present invention can reduce the interval between thelight emitting elements 3 by forming a plurality oflight emitting elements 3 on thesubstrate 2 and providing a plurality of types of phosphors covering each of them. Therefore, it is possible to reduce the size of a light emitting device that can emit light of a plurality of colors. In particular, when thelight emitting device 1 is used as a color display, the resolution of an image to be displayed can be increased in addition to downsizing of thelight emitting device 1.

次に、発光デバイス１の製造方法について説明する。
図５は、本発明の発光デバイス１の製造方法を示す工程図である。Next, a method for manufacturing thelight emitting device 1 will be described.
FIG. 5 is a process diagram showing a method for manufacturing the light-emittingdevice 1 of the present invention.

基板２の表面に発光素子３、共通カソード電極４、共通アノード電極５を形成する（図５（ａ））。  Thelight emitting element 3, thecommon cathode electrode 4, and thecommon anode electrode 5 are formed on the surface of the substrate 2 (FIG. 5A).

基板２の一主面２ａの全面に、一導電型半導体層３ａの前駆体となる一導電型半導体層を結晶成長させ、その全面に逆導電型半導体層３ｂの前駆体となる逆導電型半導体層を結晶成長させる。  A reverse-conductivity-type semiconductor that becomes a precursor of the reverse-conductivity-type semiconductor layer 3b is grown on the entire surface of oneprincipal surface 2a of thesubstrate 2 by crystal growth of a single-conductivity-type semiconductor layer that is a precursor of the single-conductivity-type semiconductor layer 3a. Crystallize the layer.

各層は、たとえばＣＶＤ（Chemical Vapor Deposition）法によって形成される。
次に、積層した半導体層を加工して、基板２上に複数の独立した発光素子３を形成する。この際、フォトリソグラフィーによって所望のマスクパターンを形成した後、基板２表面が露出するまでエッチング処理し、発光素子３を形成する。このエッチング処理では、たとえばウェットエッチングを行い、基板２から発光素子３の上面に向かうにしたがって断面積が次第に小さくなるような、いわゆるメサ形状断面を有する発光素子３を形成する。Each layer is formed by, for example, a CVD (Chemical Vapor Deposition) method.
Next, the stacked semiconductor layers are processed to form a plurality of independentlight emitting elements 3 on thesubstrate 2. At this time, after forming a desired mask pattern by photolithography, etching is performed until the surface of thesubstrate 2 is exposed to form thelight emitting element 3. In this etching process, for example, wet etching is performed to form the light-emittingelement 3 having a so-called mesa-shaped cross section in which the cross-sectional area gradually decreases from thesubstrate 2 toward the upper surface of the light-emittingelement 3.

発光素子３を形成したのち、さらに、共通カソード電極４および共通アノード電極５を形成する。各電極は、発光素子３が形成された基板２全面に、ＣＶＤ法、スパッタリング法などにより、金属層を設けたのち所定の電極形状にパターン形成してもよいし、印刷法、箔転写法などにより、直接電極形状にパターン化された金属層を形成してもよい。  After forming thelight emitting element 3, thecommon cathode electrode 4 and thecommon anode electrode 5 are further formed. Each electrode may be formed in a predetermined electrode shape after forming a metal layer on the entire surface of thesubstrate 2 on which thelight emitting element 3 is formed by CVD, sputtering, or the like, or printing, foil transfer, etc. Thus, a metal layer patterned directly into an electrode shape may be formed.

次に、全ての光学素子３を被覆するように樹脂材料２０を塗布する（図５（ｂ））。樹脂材料２０は、たとえば、スピンコート法、スプレイコート法、ディップ法等によって塗布し、硬化条件を適宜調整して仮硬化させる。。  Next, theresin material 20 is applied so as to cover all the optical elements 3 (FIG. 5B). Theresin material 20 is applied by, for example, a spin coating method, a spray coating method, a dip method, and the like, and is temporarily cured by appropriately adjusting the curing conditions. .

樹脂材料２０の塗布厚みは、すなわち隔壁１０の高さとなるので、５μｍ〜１５０μｍとする。  The coating thickness of theresin material 20 is 5 μm to 150 μm because it is the height of thepartition wall 10.

樹脂材料２０のうち、緑色発光用蛍光体８を形成する領域については、基板２表面および発光素子３表面などから樹脂材料を除去する。樹脂材料の除去は、フォトリソグラフィーによる加工方法を用いて、樹脂材料２０にレジストマスクを形成し、ウェットエッチング、ドライエッチングなどで行う。  In theresin material 20, the resin material is removed from the surface of thesubstrate 2, the surface of thelight emitting element 3, and the like in the region where the greenlight emitting phosphor 8 is formed. The resin material is removed by forming a resist mask on theresin material 20 using a processing method by photolithography, and performing wet etching, dry etching, or the like.

樹脂材料が除去された領域に緑色発光用蛍光体８となる、蛍光物質と樹脂との混合物を流し込み、硬化条件を適宜調整して仮硬化させる（図５（ｃ））。  A mixture of a fluorescent material and a resin, which becomes the greenlight emitting phosphor 8, is poured into the region from which the resin material has been removed, and the curing condition is adjusted as appropriate to cause temporary curing (FIG. 5C).

緑色発光用蛍光体８と同様に、樹脂材料２０のうち、赤色発光用蛍光体７を形成する領域については、基板２表面および発光素子３表面などから樹脂材料を除去する。樹脂材料が除去された領域に赤色発光用蛍光体７となる、蛍光物質と樹脂との混合物を流し込み、硬化条件を適宜調整して仮硬化させる（図５（ｄ））。  Similarly to the greenlight emitting phosphor 8, the resin material is removed from the surface of thesubstrate 2, thelight emitting element 3, and the like in the region of theresin material 20 where the redlight emitting phosphor 7 is formed. A mixture of a fluorescent substance and a resin, which becomes the redlight emitting phosphor 7, is poured into the region from which the resin material has been removed, and the curing conditions are adjusted as appropriate to cause temporary curing (FIG. 5D).

緑色発光用蛍光体８、赤色発光用蛍光体７と同様に、樹脂材料２０のうち、青色発光用蛍光体６を形成する領域については、基板２表面および発光素子３表面などから樹脂材料を除去する。樹脂材料が除去された領域に青色発光用蛍光体６となる、蛍光物質と樹脂との混合物を流し込み、硬化条件を適宜調整して仮硬化させる。  Similar to the green light-emittingphosphor 8 and the red light-emittingphosphor 7, the resin material is removed from the surface of thesubstrate 2, the light-emittingelement 3, and the like in the region of theresin material 20 where the blue light-emittingphosphor 6 is formed. To do. A mixture of a fluorescent substance and a resin, which becomes the blue light-emittingphosphor 6, is poured into the region from which the resin material has been removed, and the curing condition is appropriately adjusted and temporarily cured.

その後、オーブン、ホットプレート、キュア炉などによる熱硬化、紫外線照射による光硬化など硬化条件を調整し、枠体９、隔壁１０および青色発光用蛍光体６、赤色発光用蛍光体７、緑色発光用蛍光体８を本硬化させて本発明の発光デバイス１を得る。  After that, the curing conditions such as heat curing by oven, hot plate, curing furnace, etc., photocuring by ultraviolet irradiation, and the like are adjusted, and the frame 9, thepartition 10, the bluelight emitting phosphor 6, the redlight emitting phosphor 7, the green light emitting Thephosphor 8 is fully cured to obtain thelight emitting device 1 of the present invention.

以上、本発明の発光デバイスおよび光学デバイスの製造方法について説明したが、本発明の発光デバイスおよび光学デバイスの製造方法は上記実施例に限定されるものでなく、本発明の要旨を逸脱しない範囲において、各種の改良および変更を行ってもよいのはもちろんである。  The manufacturing method of the light emitting device and the optical device of the present invention has been described above, but the manufacturing method of the light emitting device and the optical device of the present invention is not limited to the above-described embodiments, and does not depart from the gist of the present invention. Of course, various improvements and modifications may be made.

本発明の実施の一形態である発光デバイス１の構成を示す平面図である。It is a top view which shows the structure of the light-emittingdevice 1 which is one Embodiment of this invention.図１の切断面線Ａ−Ａから見た断面図である。It is sectional drawing seen from the cut surface line AA of FIG.図１の切断面線Ｂ−Ｂから見た断面図である。It is sectional drawing seen from the cut surface line BB of FIG.本発明の実施の他の形態である発光装置１１の構成を示す断面図である。It is sectional drawing which shows the structure of the light-emitting device 11 which is another form of implementation of this invention.本発明の発光デバイス１の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the light-emittingdevice 1 of this invention.

符号の説明Explanation of symbols

１ 発光デバイス
２ 基板
３ 発光素子
４ 共通カソード電極
５ 共通アノード電極
６ 青色発光用蛍光体
７ 赤色発光用蛍光体
８ 緑色発光用蛍光体DESCRIPTION OFSYMBOLS 1Light emitting device 2 Board |substrate 3Light emitting element 4Common cathode electrode 5Common anode electrode 6 Phosphor for bluelight emission 7 Phosphor forred light emission 8 Phosphor for green light emission

Claims (4)

Translated fromJapanese
半導体基板と、
該半導体基板上に形成される一導電型半導体層と、該一導電型半導体層に積層される逆導電型半導体層との接合部分をそれぞれが含み、前記接合部分が離間して設けられる複数の発光部と、
前記複数の発光部をそれぞれ覆い、前記発光部から放射される光によって励起してそれぞれ異なる波長の蛍光を発光する複数種類の蛍光体と、
前記半導体基板上に設けられ、少なくとも異なる種類の蛍光体に覆われた発光部に含まれる前記逆導電型半導体層と電気的に接続される第１共通電極と、
前記半導体基板上に設けられ、同じ種類の蛍光体に覆われた発光部に含まれる前記一導電型半導体層と電気的に並列接続される第２共通電極とを含むことを特徴とする発光デバイス。A semiconductor substrate;
Each includes a junction part of one conductivity type semiconductor layer formed on the semiconductor substrate and a reverse conductivity type semiconductor layer stacked on the one conductivity type semiconductor layer, and the junction parts are provided in a plurality of spaced positions. A light emitting unit;
A plurality of types of phosphors that respectively cover the plurality of light emitting units and are excited by light emitted from the light emitting units to emit fluorescence of different wavelengths;
A first common electrode provided on the semiconductor substrate and electrically connected to the reverse conductivity type semiconductor layer included in a light emitting unit covered with at least different types of phosphors;
A light-emitting device comprising: a second common electrode electrically connected in parallel to the one-conductivity-type semiconductor layer provided on the semiconductor substrate and covered with a phosphor of the same type and included in a light-emitting portion . 前記半導体基板上に設けられ、異なる種類の蛍光物質を含む蛍光体同士を隔てる隔壁をさらに含み、前記隔壁の前記半導体基板の主面からの高さは、前記蛍光体の前記半導体基板の主面からの高さよりも高いことを特徴とする請求項１記載の発光デバイス。  A partition provided on the semiconductor substrate and separating phosphors containing different types of fluorescent materials is further included, and the height of the partition from the main surface of the semiconductor substrate is the main surface of the semiconductor substrate of the phosphor The light-emitting device according to claim 1, wherein the light-emitting device is higher than 前記発光部は、紫外線を放射し、
前記蛍光物質は、前記発光部から放射される紫外線によって励起され、少なくとも赤色の蛍光、青色の蛍光、緑色の蛍光を発光することを特徴とする請求項１または２記載の発光デバイス。The light emitting unit emits ultraviolet rays,
3. The light emitting device according to claim 1, wherein the fluorescent material is excited by ultraviolet rays emitted from the light emitting unit and emits at least red fluorescence, blue fluorescence, and green fluorescence. 半導体基板を準備する工程と、
前記半導体基板上に、一導電型半導体層と、該一導電型半導体層に積層される逆導電型半導体層との接合部分をそれぞれが含み、前記接合部分が離間して設けられる複数の発光部を形成する工程と、
前記半導体基板上に、前記逆導電型半導体層と電気的に接続される第１共通電極と、前記一導電型半導体層と電気的に並列接続される第２共通電極とを形成する工程と、
前記発光部から放射される光によって励起してそれぞれ異なる波長の蛍光を発光する複数種類の蛍光体で前記複数の発光部をそれぞれ覆う工程であって、前記第１共通電極で接続された発光部を、少なくとも異なる種類の蛍光体で覆い、前記第２共通電極で接続された発光部を、同じ種類の蛍光体で覆う工程と、を含むことを特徴とする発光デバイスの製造方法。Preparing a semiconductor substrate; and
A plurality of light emitting portions each including a junction portion of one conductivity type semiconductor layer and a reverse conductivity type semiconductor layer stacked on the one conductivity type semiconductor layer on the semiconductor substrate, the junction portions being provided apart from each other Forming a step;
Forming a first common electrode electrically connected to the reverse conductivity type semiconductor layer and a second common electrode electrically connected in parallel to the one conductivity type semiconductor layer on the semiconductor substrate;
A step of covering each of the plurality of light emitting units with a plurality of types of phosphors that are excited by light emitted from the light emitting unit to emit fluorescence of different wavelengths, and connected by the first common electrode Covering at least different types of phosphors, and covering the light-emitting portions connected by the second common electrode with the same type of phosphors.
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