【０００１】[0001]
【発明の属する技術分野】本発明は素子間干渉電波シー
ルド型高周波モジュールに関するものであり、特に、デ
バイス相互の電磁波干渉が問題となってくる２０ＧＨｚ
以上のマイクロ波、ミリ波帯域高周波無線機器等に実装
する複数の能動素子を搭載した回路基板上における素子
間の電磁波干渉を抑えるシールド構造に特徴のある素子
間干渉電波シールド型高周波モジュールに関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inter-element interference radio wave shield type high frequency module, and in particular, an electromagnetic wave interference between devices becomes a problem at 20 GHz.
It relates to an inter-element interference radio wave shield type high frequency module characterized by a shield structure that suppresses electromagnetic wave interference between elements on a circuit board equipped with a plurality of active elements to be mounted on the microwave and millimeter wave band high frequency radio equipment. is there.
【０００２】[0002]
【従来の技術】近年、携帯電話、無線ＬＡＮ、或いは、
自動車レーダなどが広く普及しているが、この様な高周
波無線機器にはＭＭＩＣ（モノリシックマイクロ波Ｉ
Ｃ）等の高周波電子デバイスを高密度に実装するＭＣＭ
（Ｍｕｌｔｉ Ｃｈｉｐ Ｍｏｄｕｌｅ）型高周波回路
基板が搭載されている。2. Description of the Related Art In recent years, mobile phones, wireless LANs, or
Automotive radar and the like are widely used, but MMIC (monolithic microwave I
MCM for high-density mounting of high-frequency electronic devices such as C)
A (Multi Chip Module) type high frequency circuit board is mounted.
【０００３】従来、この様な高周波ＭＭＩＣの実装とし
ては、ＭＭＩＣをセラミック基板上にワイヤボンドある
いはフリップチップにより接続し、その上にセラミック
キャップを被せ、気密封止構造にし、キャップ内側に金
属箔や電波吸収体シートを貼り付けることで、干渉電波
をシールドする性質を併せ持ったシングルチップパッケ
ージが一般的であるので、ここで、図４を参照して従来
のシングルチップパッケージを説明する。Conventionally, in the mounting of such a high frequency MMIC, the MMIC is connected to a ceramic substrate by wire bonding or flip chip, and a ceramic cap is put on the MMIC to form an airtightly sealed structure, and a metal foil or a metal foil is formed inside the cap. Since a single-chip package that also has a property of shielding an interference radio wave by attaching an electromagnetic wave absorber sheet is general, a conventional single-chip package will be described here with reference to FIG.
【０００４】図４参照図４は、従来のシングルチップパッケージの概略的断面
図であり、表面配線４３及び裏面配線層４４を設けると
ともに、両者をビア４２によって導通させたセラミック
基板４１上に、ＭＭＩＣチップ３１に設けたバンプ電極
３２によってフリップチップボンディングしたのち、内
側に電磁波シールド膜４６を設けたセラミックキャップ
４５を用いて気密封止したものである。FIG. 4 is a schematic cross-sectional view of a conventional single-chip package, in which a front surface wiring 43 and a back surface wiring layer 44 are provided, and a MMIC is mounted on a ceramic substrate 41 which is electrically connected by a via 42. After flip-chip bonding by the bump electrode 32 provided on the chip 31, the ceramic cap 45 having the electromagnetic wave shielding film 46 provided inside is hermetically sealed.
【０００５】このシングルチップパッケージをコプレー
ナ線路を形成したアルミナ基板上に固定し、各シングル
チップパッケージ間をリボン等で相互接続することによ
って高周波モジュールを構成していた。A high-frequency module is constructed by fixing the single chip package on an alumina substrate having a coplanar line and interconnecting the single chip packages with a ribbon or the like.
【０００６】このような構造のシングルチップパッケー
ジを使用した高周波モジュールはコストがかなり高いた
め、最近では低コストな簡易封止型ＭＣＭ、即ち、樹脂
封止型ＭＣＭによるモジュール化が求められている。Since a high frequency module using a single chip package having such a structure has a considerably high cost, recently, a low cost simple sealing type MCM, that is, a resin sealing type MCM has been demanded to be modularized.
【０００７】[0007]
【発明が解決しようとする課題】しかし、樹脂封止型Ｍ
ＣＭにおいては、樹脂封止されたＭＭＩＣチップのシー
ルド対策、即ち、電磁波干渉（ＥＭＩ：Ｅｌｅｃｔｒｏ
ｍａｇｎｅｔｉｃ Ｉｎｔｅｒｆｅｒｅｎｃｅ）対策が
必要になる。However, the resin-sealed type M
In CM, measures for shielding the resin-sealed MMIC chip, that is, electromagnetic interference (EMI: Electro)
Measures against magnetic interference are required.
【０００８】したがって、本発明は、ＭＣＭ型回路基板
上に簡易封止して実装されたチップ間の電磁波干渉を抑
えることを目的とする。Therefore, an object of the present invention is to suppress electromagnetic wave interference between chips that are simply sealed and mounted on an MCM type circuit board.
【０００９】[0009]
【課題を解決するための手段】図１は、本発明の原理的
構成の説明図であり、ここで、図１を参照して本発明に
おける課題を解決するための手段を説明する。図１参照上記の課題を解決するために、本発明は、複数の能動素
子チップ３を配線２を設けた回路基板１上に搭載した高
周波モジュールにおいて、個々の能動素子チップ３を被
覆樹脂層５を介して、１０10Ωｃｍ以上の絶縁性樹脂中
に金属粒子を分散させた電磁波吸収体層６で被覆したこ
とを特徴とする。FIG. 1 is an explanatory view of the principle configuration of the present invention. Here, the means for solving the problems in the present invention will be described with reference to FIG. In order to solve the above problems, the present invention is directed to a high-frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 provided with wirings 2, and each active element chip 3 is covered with a resin layer 5. Is covered with an electromagnetic wave absorber layer 6 in which metal particles are dispersed in an insulating resin of 1010 Ωcm or more.
【００１０】この様に、１０10Ωｃｍ以上の絶縁性樹脂
中に金属粒子を分散させた電磁波吸収体層６を用いるこ
とによって、基板上の配線２に電磁波吸収体層６が接触
しても、隣の配線２とショートしない絶縁性と電磁波吸
収性能を両立させることができ、この様な電磁波シール
ド構造によって、これまで適用が困難であった高周波デ
バイスの簡易封止型ＭＣＭ実装が可能になる。なお、本
発明における「能動素子チップ」とは、チップに能動素
子を含んだ半導体チップを意味するものであり、その他
にどの様な素子が含まれていても構わないものである。As described above, by using the electromagnetic wave absorber layer 6 in which the metal particles are dispersed in the insulating resin of 1010 Ωcm or more, even if the electromagnetic wave absorber layer 6 contacts the wiring 2 on the substrate, Insulation that does not short-circuit with the adjacent wiring 2 and electromagnetic wave absorption performance can both be achieved, and such an electromagnetic wave shield structure enables simple sealed MCM mounting of high frequency devices, which has been difficult to apply until now. The "active element chip" in the present invention means a semiconductor chip including an active element in the chip, and any element other than the above may be included.
【００１１】この場合、金属粒子は、直径が１０〜３０
μｍの金属粒子が望ましく、特に、ミリ波帯電波に吸収
域のあるＮｉ或いはＡｇのいずれかからなる金属粒子が
望ましく、この金属粒子に樹脂コート層を設けてマイク
ロカプセル化することによって、基板上の配線２と電磁
波吸収体層６との短絡防止を確実に行うことができる。
なお、この様な電磁波吸収体層６は、スプレー塗布膜と
することによって、簡単に被覆形成することができる。In this case, the metal particles have a diameter of 10 to 30.
A metal particle of μm is preferable, and a metal particle made of either Ni or Ag having an absorption region for a millimeter wave charged wave is particularly preferable. By providing a resin coat layer on the metal particle and encapsulating the resin, It is possible to surely prevent short circuit between the wiring 2 and the electromagnetic wave absorber layer 6.
Note that such an electromagnetic wave absorber layer 6 can be easily coated and formed by using a spray coating film.
【００１２】また、本発明は、１０10Ωｃｍ以上の絶縁
性樹脂中に金属粒子を分散させた電磁波吸収体層６の代
わりに、金属フィルムを樹脂フィルムで挟んだ積層フィ
ルムを用いても良いものであり、例えば、熱可塑性の接
着樹脂／金属箔／耐熱性樹脂の積層構造フィルム、特
に、金属箔の膜厚が、１００〜２００μｍの積層構造フ
ィルムを用いることが望ましい。In the present invention, instead of the electromagnetic wave absorber layer 6 in which metal particles are dispersed in an insulating resin of 1010 Ωcm or more, a laminated film in which a metal film is sandwiched by resin films may be used. For example, it is desirable to use a laminated structure film of thermoplastic adhesive resin / metal foil / heat resistant resin, particularly a laminated structure film having a metal foil thickness of 100 to 200 μm.
【００１３】この様な積層フィルムを用いることによっ
て、真空ラッピングと熱圧着からなるラミネート工程に
よって、電磁波シールド構造を構成することができ、ま
た、金属箔の膜厚を使用する高周波の波長λのλ／４ｎ
（ｎは熱可塑性の接着樹脂の屈折率）の近傍の１００〜
２００μｍとすることによって、電磁波シールド効果を
高めることができる。By using such a laminated film, an electromagnetic wave shield structure can be constructed by a laminating process consisting of vacuum lapping and thermocompression bonding, and the film thickness of the metal foil can be used at a high frequency wavelength λ of λ. / 4n
100 (n is near the refractive index of the thermoplastic adhesive resin)
By setting the thickness to 200 μm, the electromagnetic wave shielding effect can be enhanced.
【００１４】また、この場合、積層フィルムは、隣接す
る能動素子チップ３間で分断することによって、隣接す
る能動素子チップ３間の配線２は積層フィルムを構成す
る熱可塑性の接着樹脂で被覆されることがなく、それに
よってインピーダンス特性が設計値とずれることがない
ので、回路基板１上を伝送する高周波信号の伝送特性を
劣化させることがなくなる。Further, in this case, the laminated film is divided between the adjacent active element chips 3, so that the wiring 2 between the adjacent active element chips 3 is covered with the thermoplastic adhesive resin constituting the laminated film. Since the impedance characteristic does not deviate from the design value, the transmission characteristic of the high frequency signal transmitted on the circuit board 1 is not deteriorated.
【００１５】上述の各電磁波シールド構造は、２０ＧＨ
ｚ以上のマイクロ波、ミリ波帯高周波デバイスに対して
特に有効であり、この様な素子間干渉電波シールド型高
周波モジュールを搭載することによって、高周波無線機
器等の電子装置の信頼性が向上する。Each of the above electromagnetic wave shield structures has a 20 GHz
It is especially effective for microwave and millimeter wave band high frequency devices of z or higher. By mounting such an inter-element interference radio wave shield type high frequency module, the reliability of electronic devices such as high frequency radio equipment is improved.
【００１６】[0016]
【発明の実施の形態】ここで、図２を参照して、本発明
の第１の実施の形態の高周波モジュールの製造工程を説
明するが、各図はそれぞれ概略的要部断面図である。図２（ａ）参照まず、コプレーナ線路１２をパターニングした、例え
ば、１０ｍｍ角で、厚さが０．４ｍｍのアルミナ基板１
１上に、７６ＧＨｚ２段アンプ構成の１．５×３ｍｍの
２個のＭＭＩＣチップ１３をＭＭＩＣチップ１３に設け
たバンプ電極１４を用いて、１ｍｍの間隔をあけてフリ
ップチップボンディングする。BEST MODE FOR CARRYING OUT THE INVENTION Here, referring to FIG. 2, a manufacturing process of a high-frequency module according to a first embodiment of the present invention will be described. Each drawing is a schematic cross-sectional view of an essential part. 2A, first, the coplanar line 12 is patterned, for example, an alumina substrate 1 having a 10 mm square and a thickness of 0.4 mm.
Two 1.5.times.3 mm MMIC chips 13 each having a 76 GHz two-stage amplifier configuration are flip-chip bonded on the substrate 1 with a bump electrode 14 provided on the MMIC chip 13 with an interval of 1 mm.
【００１７】図２（ｂ）参照次いで、お互いの樹脂が接触しないよう仕切りを置い
て、各ＭＭＩＣチップ１３の下部近傍にエポキシ樹脂を
注入し、例えば、９０〜１００℃に加熱して流動性を高
めることによって、ＭＭＩＣチップ１３の下部を埋め込
むエポキシ樹脂アンダーフィル層１５を形成する。Next, referring to FIG. 2 (b), a partition is placed so that the resins do not come into contact with each other, and epoxy resin is injected near the bottom of each MMIC chip 13 and heated to, for example, 90 to 100 ° C. to improve fluidity. By increasing the height, the epoxy resin underfill layer 15 filling the lower part of the MMIC chip 13 is formed.
【００１８】図２（ｃ）参照次いで、お互いの樹脂が接触しないよう仕切りを置いた
ままの状態で、エポキシ樹脂をポッティングすることに
よって、ＭＭＩＣチップ１３を覆うエポキシ樹脂ポッテ
ィング層１６を形成する。Next, referring to FIG. 2C, an epoxy resin potting layer 16 covering the MMIC chip 13 is formed by potting an epoxy resin with the partition left so that the resins do not come into contact with each other.
【００１９】図２（ｄ）参照次いで、マイクロカプセル型Ｎｉ微粒子を１０10Ω・ｃ
ｍ以上の絶縁抵抗を有する合成樹脂中に分散させた電磁
波吸収塗料を約２００μｍの厚さになるように、スプレ
ー塗布して電磁波吸収層１７を形成する。Next, referring to FIG. 2D, the microcapsule type Ni fine particles are treated with 1010 Ω · c.
The electromagnetic wave absorbing paint dispersed in a synthetic resin having an insulation resistance of m or more is spray-coated to a thickness of about 200 μm to form the electromagnetic wave absorbing layer 17.
【００２０】この場合の電磁波吸収層１７を構成する合
成樹脂母材は、エポキシ樹脂であり、また、マイクロカ
プセル型Ｎｉ微粒子は、粒径が１０〜３０μｍのＮｉ粒
子を厚さが０．１〜１μｍの変成ポリエステル樹脂でコ
ートして絶縁化したものを用いる。なお、金属粒子含有
樹脂における金属粒子の含有量は、例えば、４０重量％
であり、残りの６０重量％が母材樹脂である。In this case, the synthetic resin base material forming the electromagnetic wave absorbing layer 17 is an epoxy resin, and the microcapsule type Ni fine particles have a Ni particle size of 10 to 30 μm and a thickness of 0.1 to 30 μm. An insulating material coated with a modified polyester resin of 1 μm is used. The content of the metal particles in the metal particle-containing resin is, for example, 40% by weight.
And the remaining 60% by weight is the base material resin.
【００２１】この様にして製造した高周波モジュールに
おけるアイソレーション特性Ｓ12をネットワークアナラ
イザによって測定すると同時に、フリップチップボンデ
ィングしただけ（アンダーフィル、ポッティング、電磁
波吸収塗料なし）の比較サンプルのアイソレーション特
性も測定し、両者を比較した。The isolation characteristic S12 of the high-frequency module manufactured in this manner is measured by a network analyzer, and at the same time, the isolation characteristic of a comparative sample which is just flip-chip bonded (without underfill, potting, electromagnetic wave absorbing paint) is also measured. Then, the two were compared.
【００２２】その結果、フリップチップボンディングし
ただけの比較サンプルのアイソレーション特性が−２０
ｄＢであったのに対し、本発明の第１の実施の形態の高
周波モジュールのアイソレーション特性は−４５ｄＢで
あり、十分な電磁シールド効果が認められた。As a result, the isolation characteristic of the comparative sample just flip-chip bonded was -20.
While it was dB, the isolation characteristic of the high-frequency module of the first embodiment of the present invention was -45 dB, and a sufficient electromagnetic shield effect was confirmed.
【００２３】この様に、本発明はマイクロカプセル型Ｎ
ｉ粒子を分散させた樹脂を用いて電磁波シールド構造を
構成しているので、簡単な構成で樹脂封止した２０ＧＨ
ｚ以上の高周波デバイスに対して、優れた電磁波シール
ド特性と絶縁特性を両立することができる。As described above, according to the present invention, the microcapsule type N
Since the electromagnetic wave shield structure is composed of a resin in which i particles are dispersed, the resin-sealed 20 GH has a simple structure.
Excellent electromagnetic wave shielding properties and insulating properties can be compatible with high-frequency devices of z or higher.
【００２４】即ち、Ｎｉ粒子はミリ波帯電波に吸収域が
あるので、２０ＧＨｚ以上の高周波を効果的にシールド
することができ、また、導電性を有するＮｉ粒子を樹脂
コートすることによって絶縁化しているので、このＮｉ
粒子を含んだ樹脂層がコプレーナ線路１２に接しても、
グランド配線との間で短絡を起こすことがない。That is, since the Ni particles have an absorption region for millimeter-wave charged waves, it is possible to effectively shield a high frequency of 20 GHz or more, and the Ni particles having conductivity are coated with resin to be insulated. Since this is Ni
Even if the resin layer containing particles contacts the coplanar line 12,
No short circuit will occur with the ground wiring.
【００２５】次に、図３を参照して、本発明の第２の実
施の形態の高周波モジュールの製工程を説明するが、こ
の場合も各図は概略的要部断面図である。図３（ａ）参照まず、上記の第１の実施の形態の図２（ａ）及び（ｂ）
と全く同様にして、フリップチップボンディングすると
ともに、エポキシ樹脂アンダーフィル層１５を設けたＭ
ＭＩＣチップ１３対して積層フィルム２０を被せる。Next, the manufacturing process of the high frequency module according to the second embodiment of the present invention will be described with reference to FIG. 3. In this case as well, each drawing is a schematic cross-sectional view of a main part. Referring to FIG. 3A, first, FIGS. 2A and 2B of the above-described first embodiment.
In the same manner as described above, the flip-chip bonding is performed and the epoxy resin underfill layer 15 is provided.
The MIC chip 13 is covered with the laminated film 20.
【００２６】この場合の積層フィルム２０は、厚さが５
０〜１００μｍ、例えば、５０μｍの熱可塑性エポキシ
樹脂シート２１、厚さが１００〜２００μｍ、例えば、
１００μｍの銅箔２２、及び、厚さが５０〜１００μ
ｍ、例えば、１００μｍのポリイミド樹脂シート２３を
順次積層させた３層構造フィルムからなる。The laminated film 20 in this case has a thickness of 5
0 to 100 μm, for example, 50 μm thermoplastic epoxy resin sheet 21, thickness 100 to 200 μm, for example,
Copper foil 22 of 100 μm and thickness of 50 to 100 μm
m, for example, a 100 μm-thick polyimide resin sheet 23 is sequentially laminated to form a three-layer structure film.
【００２７】図３（ｂ）参照次いで、真空ラッピングして積層フィルム２０をＭＭＩ
Ｃチップ１３及びアルミナ基板１１に密着させた状態
で、例えば、１２０℃に加熱しながら圧着することによ
って、熱可塑性エポキシ樹脂シート２１とＭＭＩＣチッ
プ１３及びアルミナ基板１１とを接着させる。Next, referring to FIG. 3 (b), the laminated film 20 is subjected to MMI by vacuum lapping.
While being in close contact with the C chip 13 and the alumina substrate 11, the thermoplastic epoxy resin sheet 21 and the MMIC chip 13 and the alumina substrate 11 are adhered to each other by pressure bonding while heating at 120 ° C., for example.
【００２８】図３（ｃ）参照次いで、隣接するＭＭＩＣチップ１３の間の積層フィル
ム２０を剥がすことによって、高周波モジュールの基本
構成は完成する。なお、隣接するＭＭＩＣチップ１３の
間のコプレーナ線路１２の上に積層フィルム２０が残存
すると、本来、空気に対して設計しているコプレーナ線
路１２のインピーダンスが、積層フィルム１３を構成す
る熱可塑性エポキシ樹脂シート２１の誘電率で伝送特性
が影響を受け信号特性が劣化することになる。Next, as shown in FIG. 3C, the basic structure of the high frequency module is completed by peeling off the laminated film 20 between the adjacent MMIC chips 13. When the laminated film 20 remains on the coplanar line 12 between the adjacent MMIC chips 13, the impedance of the coplanar line 12 originally designed with respect to air is changed to the thermoplastic epoxy resin forming the laminated film 13. The transmission characteristics are affected by the permittivity of the sheet 21, and the signal characteristics are deteriorated.
【００２９】この様にして製造した高周波モジュールに
おけるアイソレーション特性Ｓ12をネットワークアナラ
イザによって測定すると、アイソレーション特性は−４
０ｄＢであり、上述のアイソレーション特性が−２０ｄ
Ｂのフリップチップボンディングしただけの比較サンプ
ルと比べて十分な電磁シールド効果が認められた。When the isolation characteristic S12 of the high-frequency module manufactured in this way is measured by a network analyzer, the isolation characteristic is -4.
0 dB, and the isolation characteristics described above are -20d.
Sufficient electromagnetic shielding effect was recognized as compared with the comparative sample of B flip-chip bonded only.
【００３０】この様に、本発明の第２の実施の形態にお
いては、予め形成した積層フィルムをラッピングするだ
けであるので、製造工程が非常に緩和される。なお、こ
の場合の積層フィルムを構成する銅箔の膜厚は、使用す
る高周波の波長の１／４近傍の厚さであることが望まし
い。一方、銅箔を挟む樹脂シートの膜厚はあまり厚すぎ
ても意味がないので５０〜１００μｍ程度が適当であ
る。As described above, in the second embodiment of the present invention, since the laminated film formed in advance is simply wrapped, the manufacturing process is greatly eased. The film thickness of the copper foil forming the laminated film in this case is preferably about ¼ of the wavelength of the high frequency used. On the other hand, it is meaningless if the resin sheet sandwiching the copper foil is too thick, and therefore, about 50 to 100 μm is suitable.
【００３１】以上、本発明の各実施の形態を説明してき
たが、本発明は各実施の形態に記載した構成に限られる
ものではなく、各種の変更が可能である。例えば、上記
各実施の形態の説明においては、実装する能動素子チッ
プを７６ＧＨｚのＭＭＩＣとしているが、周波数は任意
であり、２０ＧＨｚ以上の高周波に対して本発明の構成
は特に有効であるが、２０ＧＨｚ以下のデバイスに適用
することを妨げるものではない。Although the respective embodiments of the present invention have been described above, the present invention is not limited to the configurations described in the respective embodiments, and various modifications can be made. For example, in the description of each of the above-described embodiments, the active element chip to be mounted is the 76 GHz MMIC, but the frequency is arbitrary, and the configuration of the present invention is particularly effective for high frequencies of 20 GHz and above, but 20 GHz. It does not prevent its application to the following devices.
【００３２】また、上記の第１の実施の形態において
は、電磁波吸収体層に分散する金属粒子をＮｉ粒子とし
ているが、Ｎｉ粒子に限られるものではなく、Ｎｉ粒子
と同様にミリ波帯電波に吸収領域を有するＡｇ粒子を用
いても良いものである。Further, in the above-mentioned first embodiment, the metal particles dispersed in the electromagnetic wave absorber layer are Ni particles, but the present invention is not limited to Ni particles, and the millimeter-wave charging wave is the same as Ni particles. Alternatively, Ag particles having an absorption region may be used.
【００３３】さらには、シールド対象となる高周波の波
長に応じて、その波長域に吸収域を有する金属材料から
なる粒子を分散させても良いものである。Further, particles made of a metal material having an absorption region in the wavelength range may be dispersed according to the wavelength of the high frequency wave to be shielded.
【００３４】また、上記の第２の実施の形態において
は、積層フィルムの中間層を銅箔で構成しているが、銅
箔に限られるものではなく、銅と同様に導電性に優れる
Ａｌ箔、金箔、或いは、銀箔等を用いても良いものであ
る。Further, in the above-mentioned second embodiment, the intermediate layer of the laminated film is made of copper foil, but it is not limited to copper foil, and Al foil having excellent conductivity like copper is also used. Alternatively, gold foil, silver foil, or the like may be used.
【００３５】また、上記の各実施の形態においては言及
していないが、アンダーフィル層及びポッティング層を
構成するエポキシ樹脂中にシリカフィラーを混合して、
熱膨張系数等を調整しても良いものである。Although not mentioned in the above embodiments, a silica filler is mixed in the epoxy resin forming the underfill layer and the potting layer,
The coefficient of thermal expansion and the like may be adjusted.
【００３６】ここで、再び図１を参照して、改めて本発
明の詳細な特徴を説明する。再び、図１参照（付記１） 複数の能動素子チップ３を配線２が設けら
れた回路基板１上に搭載した高周波モジュールにおい
て、個々の能動素子チップ３を被覆樹脂層５を介して、
１０10Ωｃｍ以上の絶縁性樹脂中に金属粒子を分散させ
た電磁波吸収体層６で被覆したことを特徴とする素子間
干渉電波シールド型高周波モジュール。（付記２） 上記金属粒子の直径が、１０〜３０μｍで
あることを特徴とする付記１記載の素子間干渉電波シー
ルド型高周波モジュール。（付記３） 上記金属粒子が、Ｎｉ或いはＡｇのいずれ
かからなり、且つ、その表面に樹脂コート層が設けられ
たマイクロカプセル型金属粒子であることを特徴とする
付記１または２に記載の素子間干渉電波シールド型高周
波モジュール。（付記４） 上記電磁波吸収体層６が、スプレー塗布膜
であることを特徴とする付記１乃至３のいずれか１に記
載の素子間干渉電波シールド型高周波モジュール。（付記５） 複数の能動素子チップ３を配線２が設けら
れた回路基板１上に搭載した高周波モジュールにおい
て、個々の能動素子チップ３を金属フィルムを樹脂フィ
ルムで挟んだ積層フィルムによって別個に被覆すること
を特徴とする素子間干渉電波シールド型高周波モジュー
ル。（付記６） 上記積層フィルムは、上記能動素子チップ
３側から、熱可塑性の接着樹脂／金属箔／耐熱性樹脂の
積層構造からなることを特徴とする付記５記載の素子間
干渉電波シールド型高周波モジュール。（付記７） 上記金属箔の膜厚が、１００〜２００μｍ
であることを特徴とした付記６記載の素子間干渉電波シ
ールド型高周波モジュール。（付記８） 上記能動素子チップ３と回路基板１との間
に下部樹脂層４が設けられていることを特徴とする付記
１乃至７のいずれか１に記載の素子間干渉電波シールド
型高周波モジュール。（付記９） 上記能動素子チップ３が、少なくとも２０
ＧＨｚ以上の高周波で動作する高周波素子を含んでいる
ことを特徴とする付記１乃至８のいずれか１に記載の素
子間干渉電波シールド型高周波モジュール。Here, the detailed features of the present invention will be described again with reference to FIG. Again, see FIG. 1 (Appendix 1) In a high frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 on which wiring 2 is provided, each active element chip 3 is covered via a coating resin layer 5.
An inter-element interference radio wave shield type high frequency module characterized by being coated with an electromagnetic wave absorber layer 6 in which metal particles are dispersed in an insulating resin of 1010 Ωcm or more. (Supplementary Note 2) The inter-element interference radio wave shield type high frequency module according to Supplementary Note 1, wherein the metal particles have a diameter of 10 to 30 μm. (Supplementary Note 3) The element according to Supplementary Note 1 or 2, wherein the metal particles are microcapsule-type metal particles made of either Ni or Ag and having a resin coating layer provided on the surface thereof. Interference radio wave shield type high frequency module. (Additional remark 4) The electromagnetic wave shield type high frequency module according to any one of additional remarks 1 to 3, wherein the electromagnetic wave absorber layer 6 is a spray coating film. (Supplementary Note 5) In a high-frequency module in which a plurality of active element chips 3 are mounted on a circuit board 1 provided with wiring 2, each active element chip 3 is separately covered with a laminated film in which a metal film is sandwiched by resin films. An inter-element interference radio wave shield type high frequency module characterized in that (Additional remark 6) The above-mentioned laminated film has a laminated structure of a thermoplastic adhesive resin / metal foil / heat resistant resin from the side of the above-mentioned active element chip 3; module. (Supplementary Note 7) The film thickness of the metal foil is 100 to 200 μm.
The inter-element interference radio wave shield type high frequency module according to appendix 6, characterized in that (Additional remark 8) The lower resin layer 4 is provided between the active element chip 3 and the circuit board 1, and the inter-element interference radio wave shield type high frequency module according to any one of additional remarks 1 to 7 is provided. . (Supplementary Note 9) The active element chip 3 has at least 20
9. The inter-element interference radio wave shield type high-frequency module according to any one of appendices 1 to 8, which includes a high-frequency element that operates at a high frequency of GHz or higher.
【００３７】[0037]
【発明の効果】本発明によれば、マイクロカプセル型金
属粒子を含んだ樹脂層、或いは、金属箔を挟んだ積層フ
ィルムによって電磁シールド構造を形成しているので、
高周波デバイスの簡易封止型ＭＣＭにおけるチップ間干
渉ノイズのシールドが可能になり、それによって、高周
波無線機器等に用いられる低コストな実装基板の実現に
寄与するところが大きい。According to the present invention, since the electromagnetic shield structure is formed by the resin layer containing the microcapsule type metal particles or the laminated film sandwiching the metal foil,
It becomes possible to shield inter-chip interference noise in a simple sealing type MCM of a high frequency device, which largely contributes to the realization of a low-cost mounting board used for high frequency wireless equipment and the like.
【図面の簡単な説明】[Brief description of drawings]
【図１】本発明の原理的構成の説明図である。FIG. 1 is an explanatory diagram of a principle configuration of the present invention.
【図２】本発明の第１の実施の形態の高周波モジュール
の製造工程の説明図である。FIG. 2 is an explanatory diagram of a manufacturing process of the high-frequency module according to the first embodiment of the present invention.
【図３】本発明の第２の実施の形態の高周波モジュール
の製造工程の説明図である。FIG. 3 is an explanatory diagram of a manufacturing process of the high-frequency module according to the second embodiment of the present invention.
【図４】従来のシングルチップパッケージの概略的断面
図である。FIG. 4 is a schematic cross-sectional view of a conventional single chip package.
１ 回路基板２ 配線３ 能動素子チップ４ 下部樹脂層５ 被覆樹脂層６ 電磁波吸収体層１１ アルミナ基板１２ コプレーナ線路１３ ＭＭＩＣチップ１４ バンプ電極１５ エポキシ樹脂アンダーフィル層１６ エポキシ樹脂ポッティング層１７ 電磁波吸収層２０ 積層フィルム２１ 熱可塑性エポキシ樹脂シート２２ 銅箔２３ ポリイミド樹脂シート３１ ＭＭＩＣチップ３２ バンプ電極４１ セラミック基板４２ ビア４３ 表面配線層４４ 裏面配線層４５ セラミックキャップ４６ 電磁波シールド膜1 circuit board2 wiring3 Active element chip4 Lower resin layer5 Coating resin layer6 Electromagnetic wave absorber layer11 Alumina substrate12 coplanar tracks13 MMIC chip14 bump electrode15 Epoxy resin underfill layer16 Epoxy resin potting layer17 Electromagnetic wave absorption layer20 laminated film21 Thermoplastic Epoxy Resin Sheet22 Copper foil23 Polyimide resin sheet31 MMIC chip32 bump electrode41 Ceramic substrate42 via43 Surface wiring layer44 Backside wiring layer45 ceramic cap46 Electromagnetic wave shield film
─────────────────────────────────────────────────────フロントページの続き Ｆターム(参考） 4M109 AA02 BA03 CA04 CA10 EE07 5E321 AA22 BB25 BB32 BB44 CC16 GG05 GH10 ─────────────────────────────────────────────────── ───Continued front page F-term (reference) 4M109 AA02 BA03 CA04 CA10 EE07 5E321 AA22 BB25 BB32 BB44 CC16 GG05 GH10
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002074253AJP2003273571A (en) | 2002-03-18 | 2002-03-18 | Inter-element interference radio wave shield type high frequency module |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002074253AJP2003273571A (en) | 2002-03-18 | 2002-03-18 | Inter-element interference radio wave shield type high frequency module |
| Publication Number | Publication Date |
|---|---|
| JP2003273571Atrue JP2003273571A (en) | 2003-09-26 |
| JP2003273571A5 JP2003273571A5 (en) | 2005-09-08 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002074253APendingJP2003273571A (en) | 2002-03-18 | 2002-03-18 | Inter-element interference radio wave shield type high frequency module |
| Country | Link |
|---|---|
| JP (1) | JP2003273571A (en) |
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