| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000124701AJP4528413B2 (ja) | 2000-04-25 | 2000-04-25 | 気相成長方法 |
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000124701AJP4528413B2 (ja) | 2000-04-25 | 2000-04-25 | 気相成長方法 |
| Publication Number | Publication Date |
|---|---|
| JP2001302389Atrue JP2001302389A (ja) | 2001-10-31 |
| JP4528413B2 JP4528413B2 (ja) | 2010-08-18 |
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000124701AExpired - Fee RelatedJP4528413B2 (ja) | 2000-04-25 | 2000-04-25 | 気相成長方法 |
| Country | Link |
|---|---|
| JP (1) | JP4528413B2 (ja) |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100596495B1 (ko) | 2004-12-13 | 2006-07-04 | 삼성전자주식회사 | 금속 화합물의 증착 방법 및 이를 수행하기 위한 장치 |
| KR100597322B1 (ko) | 2005-03-16 | 2006-07-06 | 주식회사 아이피에스 | 박막증착방법 |
| JP2010045169A (ja)* | 2008-08-12 | 2010-02-25 | Stanley Electric Co Ltd | 化合物半導体装置とその製造方法 |
| JP2011060792A (ja)* | 2009-09-04 | 2011-03-24 | Sumitomo Electric Ind Ltd | 半導体素子の製造方法 |
| JP2014220281A (ja)* | 2013-05-01 | 2014-11-20 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP2015130401A (ja)* | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 半導体レーザ装置および電界吸収型光変調器 |
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| JPH0697097A (ja)* | 1992-07-30 | 1994-04-08 | Nec Corp | ヘテロ界面形成方法 |
| JPH0769786A (ja)* | 1993-09-03 | 1995-03-14 | Mitsubishi Chem Corp | 結晶成長方法 |
| JPH09213641A (ja)* | 1996-02-06 | 1997-08-15 | Oki Electric Ind Co Ltd | 有機金属気相成長による急峻なヘテロ界面の作製方法 |
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0697097A (ja)* | 1992-07-30 | 1994-04-08 | Nec Corp | ヘテロ界面形成方法 |
| JPH0769786A (ja)* | 1993-09-03 | 1995-03-14 | Mitsubishi Chem Corp | 結晶成長方法 |
| JPH09213641A (ja)* | 1996-02-06 | 1997-08-15 | Oki Electric Ind Co Ltd | 有機金属気相成長による急峻なヘテロ界面の作製方法 |
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100596495B1 (ko) | 2004-12-13 | 2006-07-04 | 삼성전자주식회사 | 금속 화합물의 증착 방법 및 이를 수행하기 위한 장치 |
| KR100597322B1 (ko) | 2005-03-16 | 2006-07-06 | 주식회사 아이피에스 | 박막증착방법 |
| JP2010045169A (ja)* | 2008-08-12 | 2010-02-25 | Stanley Electric Co Ltd | 化合物半導体装置とその製造方法 |
| JP2011060792A (ja)* | 2009-09-04 | 2011-03-24 | Sumitomo Electric Ind Ltd | 半導体素子の製造方法 |
| JP2014220281A (ja)* | 2013-05-01 | 2014-11-20 | 住友電気工業株式会社 | 半導体装置の製造方法 |
| JP2015130401A (ja)* | 2014-01-07 | 2015-07-16 | 三菱電機株式会社 | 半導体レーザ装置および電界吸収型光変調器 |
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| JP4528413B2 (ja) | 2010-08-18 |
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